MICROCHIP MCP6141, MCP6142, MCP6143, MCP6144 Technical data

M
MCP6141/2/3/4
600 nA, Non-Unity Gain Rail-to-Rail Input/Output Op Amps
Features
• Low Quiescent Current: 600 nA/Amplifier (typ.)
• Stable for gains of 10 V/V or higher
• Rail-to-Rail Input: -0.3V (min.) to V
DD
• Rail-to-Rail Output:
+10 mV (min.) to VDD-10 mV (max.)
-V
SS
• Gain Bandwidth Product: 100 kHz (typ.)
• Wide Supply Voltage Range: 1.4V to 5.5V (max.)
• Available in Single, Dual and Quad
• Chip Select (CS
) with MCP6143
Applications
• Toll Booth Tags
• Wearable Products
• Temperature Measurement
• Battery-Powered
Available Tools
• Spice macro models (at www.microchip.com)
• FilterLab
®
Software (at www.microchip.com)
Package Types
MCP6141
PDIP, SOIC, MSOP
NC
1
-IN
2
­+
+IN
3
V
4
SS
MCP6143
PDIP, SOIC, MSOP
NC
1
2
-
-IN +
3
+IN
V
4
SS
8
NC
7
V
OUT
6
NC
5
CS
8
V
7
OUT
6
NC
5
OUTA
DD
DD
MCP6142
PDIP, SOIC, MSOP
1
A
-
+
2
-INA
+INA
V
SS
PDIP, SOIC, TSSOP
OUTA
-INA1
+INA1
V
DD
+INB
-INB
3
4
MCP6144
1
A
2
-
+
3
4
5
-
+
6
B
7OUTB1
B
-
+
D
-
+
-
+
C
8
7
6
5
14
13
12
11
10
9
8
V
DD
OUTB
-INB
+INB
OUTD
-IND
+IND
V
SS
+INC
-INC
OUTC
Description
The MCP6141/2/3/4 family of non-unity gain stable operational amplifiers (op amps) from Microchip Technology, Inc. operate with a single supply voltage as low as 1.4V, while drawing less than 1 µA (max.) of quiescent current per amplifier. These devices are also designed to support rail-to-rail input and output swing.
The MCP6141/2/3/4 op amps have a gain bandwidth product of 100 kHz (typ.) and are stable for gains of 10 V/V or higher. This specification makes these devices appropriate for battery-powered applications where higher frequency responses from the amplifier are required.
The MCP6141/2/3/4 family of op amps are offered in single (MCP6141), single with a Chip Select (CS
) fea­ture (MCP6143), dual (MCP6142) and quad (MCP6144) configurations.
Typical Applications
V
DD
I
1k
DD
+1.4V
to
5.5V
R
I
100 k
High Side Battery Current Sensor
R

G
1
n
R
V
V
V
V
REF
1
1
R
2
2
R
3
3
------+

I
1
I
2
I
3
MCP614X
Summing Amplifier
1

1R
G
n
----- -
+ 10V/V=
F

R
1
MCP614X
R
F
R
I
R
F
1
----- -
R
2
V
DD
= 1 M
F
10V/V=
I
F
1
----- -++
R
3
V
SS
V
OUT
2002 Microchip Technology Inc. 21668A-page 1
MCP6141/2/3/4

1.0 ELECTRICAL CHARACTERISTICS

1.1 Maximum Ratings†

V
- VSS.........................................................................7.0V
DD
All inputs and outputs........................ V
Difference Input voltage ....................................... |V
Output Short Circuit Current ..................................continuous
Current at Input Pins ....................................................±2 mA
Current at Output and Supply Pins ............................±30 mA
-0.3V to VDD +0.3V
SS
DD
- VSS|
PIN FUNCTION TABLE
Name Function
+IN/+INA/+INB/+INC/+IND Non-inverting Inputs
-IN/-INA/-INB/-INC/-IND Inverting Inputs
V
DD
V
SS
OUT/OUTA/OUTB/OUTC/OUTD Outputs
CS
NC No internal connection
Positive Power Supply
Negative Power Supply
Chip Select
Storage temperature ..................................... -65°C to +150°C
Junction Temperature, T
............................................ +150°C
J
ESD protection on all pins (HBM:MM).................. ≥ 4kV:200V
†Notice: Stresses above those listed under “Maximum Rat­ings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Expo­sure to maximum rating conditions for extended periods may affect device reliability.
DC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, all limits are specified for VDD = +1.4V to +5.5V, VSS = GND, TA = 25°C,
V
= VDD/2, R
CM
Input Offset
Input Offset Voltage V Drift with Temperature ∆V
Power Supply Rejection PSRR 70 85 dB
Input Bias Current and Impedance
Input Bias Current I
Input Bias Current Over-Temperature I
Input Offset Current I
Common Mode Input Impedance Z
Differential Input Impedance Z
Common Mode
Common-Mode Input Range VCMR V
Common-Mode Rejection Ratio CMRR 62 80 dB V
Open Loop Gain
DC Open Loop Gain (large signal) A
Output
Maximum Output Voltage Swing VOL, VOHVSS + 10 V
Output Short Circuit Current I
Power Supply
Supply Voltage V
Quiescent Current per amplifier I
= 1 MΩ to V
L
/2, and V
DD
OUT
~ VDD/2.
Parameters Sym Min Typ Max Units Conditions
VCM = V
SS
OS
OS
B
B
OS
CM
DIFF
OL
O
DD
Q
-3.0 +3.0 mV
/T— ±1.5 — µV/°CT
= -40°C to +85°C
A
—1.0— pA
——100pAT
= -40°C to +85°C
A
—1.0— pA
—10
—10
0.3 V
SS
60 75 dB V
60 80 dB V
95 115 dB R
—21—mAV
13
||6 ||pF
13
||6 ||pF
+ 0.3 V
DD
10 mV RL = 50 k to V
DD
= 5V,
DD
V
= -0.3V to 5.3V
CM
= 5V,
DD
V
= 2.5V to 5.3V
CM
= 5V,
DD
V
= -0.3V to 2.5V
CM
= 50 k to V
L
100 mV < V (V
100 mV)
DD
OUT
1.4 5.5 V
0.3 0.6 1.0 µA IO = 0
OUT
= 2.5V, VDD = 5 V
DD
<
DD
/2,
/2
21668A-page 2 2002 Microchip Technology Inc.
MCP6141/2/3/4
AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, all limits are specified for VDD = +5V, VSS = GND, TA = 25 °C,
V
= VDD/2, R
CM
Gain Bandwidth Product GBWP 100 kHz
Slew Rate SR 24 V/ms
Phase Margin PM 60 ° G = +10
Input Voltage Noise E
Input Voltage Noise Density e
Input Current Noise Density i
SPECIFICATIONS FOR MCP6143 CHIP SELECT FEATURE
Electrical Characteristics: Unless otherwise indicated, all limits are specified for V
V
= VDD/2, R
CM
CS Low Specifications
CS Logic Threshold, Low V
CS
Input Current, Low I
CS High Specifications
CS Logic Threshold, High V
CS
Input Current, High I
CS Input High, GND Current I
Amplifier Output Leakage, CS High 20 pA CS = V
Dynamic Specifications
CS Low to Amplifier Output High Turn-on Tim e
High to Amplifier Output High Z
CS
Hysteresis V
= 1 Mto V
L
/2, CL = 60 pF, and V
DD
OUT
~ VDD/2.
Parameters Sym Min Typ Max Units Conditions
5.0 µVp-p f = 0.1 Hz to 10 Hz —170—nV/√Hz f = 1 kHz —0.6—fA/√Hz f = 1 kHz
= +1.4V to +5.5V, VSS = GND, TA = 25 °C,
DD
~ VDD/2.
= 1 M to V
L
/2, CL = 60 pF, and V
DD
n
n
n
OUT
Parameters Sym Min Typ Max Units Conditions
CSL
CSH
t
ON
t
OFF
HYST
IL
V
SS
—5.0—pACS = V
VDD - 0.3 V
IH
—5.0—pACS = V
Q
—20—pACS = V
—2.050msCS low = VSS + 0.3V, G = +1 V/V,
—10—µsCS high = VDD - 0.3V, G = +1 V/V
—0.6— VV
—VSS + 0.3 V For entire VDD range
SS
DD
V For entire VDD range
DD
DD
DD
V
= 0.9 VDD/2
OUT
V
= 0.1 VDD/2
OUT
= 5V
DD
TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, all limits are specified for V
Parameters Symbol Min Typ Max Units Conditions
Temperature Ranges
Specified Temperature Range T
Operating Temperature Range T
Storage Temperature Range T
A
A
A
-40 +85 °C
-40 +125 °C Note 1
-65 +150 °C
Thermal Package Resistances
Thermal Resistance, 8L-PDIP θ Thermal Resistance, 8L-SOIC θ Thermal Resistance, 8L-MSOP θ Thermal Resistance, 14L-PDIP θ Thermal Resistance, 14L-SOIC θ Thermal Resistance, 14L-TSSOP θ
JA
JA
JA
JA
JA
JA
Note 1: The MCP6141/2/3/4 family of op amps operates over this extended range, but with reduced performance.
2002 Microchip Technology Inc. 21668A-page 3
85
163
206
70
108
100
= +1.4V to +5.5V, V
DD
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
SS
= GND.
MCP6141/2/3/4

2.0 TYPICAL PERFORMANCE CURVES

Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, V and V
OUT~VDD
/2.
= +5V, VSS = GND, TA = 25°C, VCM = VDD/2, R
DD
= 1 Mto V
L
DD
/2, C
= 60 pF,
L
16%
1200 Samples
14%
VDD = 5.5 V
12%
10%
8%
6%
4%
2%
Percentage of Occurrences
0%
-3 -2 -1 0 1 2 3
Input Offset Voltage (mV)
FIGURE 2-1: Histogram of Input Offset Voltage with V
16%
1200 Samples
14%
VDD = 1.4 V
12%
10%
8%
6%
4%
2%
Percentage of Occurrences
0%
-3 -2 -1 0 1 2 3
= 5.5V.
DD
Input Offset Voltage (mV)
35%
1200 Samples
30%
VDD = 1.4 V
25%
20%
15%
10%
5%
Percentage of Occurrences
0%
-10 -5 0 5 10
Input Offset Voltage Drift (µV/°C)
FIGURE 2-4: Histogram of Input Offset Voltage Drift with V
600
VDD = 1.4 V
400
200
0
-200
-400
Input Offset Voltage (µV)
-600
-0.5 0.0 0.5 1.0 1.5 2.0 Common Mode Input Voltage (V)
= 1.4V.
DD
TA = +85°C
= +25°C
T
A
T
= -40°C
A
FIGURE 2-2: Histogram of Input Offset Voltage with V
35%
1200 Samples
30%
VDD = 5.5 V
25%
20%
15%
10%
5%
Percentage of Occurrences
0%
-10 -5 0 5 10
= 1.4V.
DD
Input Offset Voltage Drift (µV/°C)
FIGURE 2-3: Histogram of Input Offset Voltage Drift with V
= 5.5V.
DD
FIGURE 2-5: Input Offset Voltage vs. Common Mode Input Voltage vs. Temperature with V
= 1.4V.
DD
600
VDD = 5.5 V
400
200
0
-200
-400
Input Offset Voltage (µV)
-600
-0.5 0.5 1.5 2.5 3.5 4.5 5.5
TA = +85°C T T
Common Mode Input Voltage (V)
= +25°C
A
= -40°C
A
TA = +85°C
= +25°C
T
A
= -40°C
T
A
FIGURE 2-6: Input Offset Voltage vs. Common Mode Input Voltage vs. Temperature with V
= 5.5V.
DD
21668A-page 4 2002 Microchip Technology Inc.
MCP6141/2/3/4
Note: Unless otherwise indicated, V
and V
OUT~VDD
500
450
400
350
300
Input Offset Voltage (µV)
250
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
/2.
VDD = 1.4 V
Output Voltage (V)
= +5V, VSS = GND, TA = 25°C, VCM = VDD/2, R
DD
RL = 50 k:
VDD = 5.5 V

FIGURE 2-7: Input Offset Voltage vs. Output Voltage vs. Power Supply Voltage.

1,000
Hz)
(nV/
Input Noise Voltage Density
100
0.1 1 10 100 1000
Eni = 4.7 µV
= 167 nV/Hz, f = 1 kHz
e
ni
Frequency (Hz)
, f = 0.1 to 10 Hz
P-P
= 1 Mto V
L
50
TA = 85°C V
= 5.5 V
DD
40
30
20
10
0
Input Bias, Offset Currents (pA)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Common Mode Input Voltage (V)
/2, C
DD
Input Bias Current
Input Offset Current
= 60 pF,
L

FIGURE 2-10: Input Bias, Offset Currents vs. Common Mode Input Voltage with Temperature = 85°C.

300
250
200
Hz)
150
(nV/
100
50
Input Noise Voltage Density
0
-0.5 0.5 1.5 2.5 3.5 4.5 5.5
Common Mode Input Voltage (V)
f = 1 kHz VDD = 5.0 V

FIGURE 2-8: Input Noise Voltage Density vs. Frequency.

100
90
80
70
60
50
40
CMRR, PSRR (dB)
30
20
1 10 100 1000
PSRR-
CMRR
10 100
Frequency (Hz)
PSRR+
VDD = 5.0 V Referred to Input

FIGURE 2-9: Common Mode Rejection Ratio, Power Supply Rejection Ratio vs. Frequency.

FIGURE 2-11: Input Noise Voltage Density vs. Common Mode Input Voltage.

100
95
90
85
80
CMRR, PSRR (dB)
75
70
-40-20 0 20406080
CMRR (VDD = 5.0 V, V
CM
Ambient Temperature (°C)
PSRR (VCM = VSS)
= -0.3 V to +5.3 V)

FIGURE 2-12: Common Mode Rejection Ratio, Power Supply Rejection Ratio vs. Ambient Temperature.

2002 Microchip Technology Inc. 21668A-page 5
MCP6141/2/3/4
k
k
r
Note: Unless otherwise indicated, V
and V
OUT~VDD
50
40
30
(pA)
20
10
Input Bias and Offset Currents
0
/2.
VCM = V
DD
VDD = 5.5 V
25 35 45 55 65 75 85
Ambient Temperature (°C)
= +5V, VSS = GND, TA = 25°C, VCM = VDD/2, R
DD
Input Bias Current
Input Offset Current

FIGURE 2-13: Input Bias and Offset Currents vs. Ambient Temperature.

120
100
80
60
40
20
0
Open-Loop Gain (dB)
VDD = 5.5 V
-20
0.1
0.01
Phase
1
Frequency (Hz)
Gain
10
100
1
1000
10k
10000
100 100000
0
-30
-60
-90
-120
-150
-180
Open-Loop Phase (°)
-210
= 1 Mto V
L
0.7
0.6
0.5
0.4
(mA)
0.3
0.2
0.1
Quiescent Current per amplifie
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5. 5 6.0 6.5 7.0
TA = 85°C
TA = 25°C
TA = -40°C
Power Supply Voltage (V)
DD
/2, C
= 60 pF,
L

FIGURE 2-16: Quiescent Current Vs. Power Supply Voltage vs. Temperature.

140
130
120
110
100
90
80
DC Open-Loop Gain (dB)
70
60
100
VDD = 5.5 V V
= 0.5 V to 5.0 V
OUT
VDD = 1.4 V V
= 0.5 V to 0.9 V
OUT
1k 10k 100k
Load Resistance (:)
FIGURE 2-14: Open Loop Gain, Phase vs. Frequency with V
140
130
120
110
100
90
80
70
DC Open Loop Gain (dB)
60
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
= 5.5V.
DD
RL = 50 k: V
= 100 mV to VDD - 100 mV
OUT
Power Supply Voltage (V)

FIGURE 2-15: DC Open Loop Gain vs. Power Supply Voltage.

FIGURE 2-17: DC Open Loop Gain vs. Load Resistance vs. Power Supply Voltage.

140
RL = 50 k:
130
120
110
100
(dB)
90
80
70
60
Small Signal DC Open Loop Gain
0.00 0.05 0.10 0.15 0.20 0.25 0.30
Output Voltage Headroom;
V
DD-VOUT
VDD = 5.5 V
VDD = 1.4 V
or V
OUT-VSS
(V)

FIGURE 2-18: Small Signal DC Open Loop Gain vs. Output Voltage Headroom vs. Power Supply.

21668A-page 6 2002 Microchip Technology Inc.
MCP6141/2/3/4
p
p
Note: Unless otherwise indicated, V
and V
OUT~VDD
140
130
120
(dB)
110
100
90
Channel-to-Channel Separation
/2.
Input-Referred
1000 10000
Frequency (Hz)
= +5V, VSS = GND, TA = 25°C, VCM = VDD/2, R
DD

FIGURE 2-19: Channel to Channel Separation vs. Frequency (MCP6142 and MCP6144 only).

120
Gain Bandwidth Product
100
80
60
(kHz)
40
20
Gain Bandwidth Product
0
-40-20 0 20406080
Phase Margin
VDD = 5.5 V
Ambient Temperature (°C)
10k1k
90
75
60
45
30
Phase Margin (°)
15
0
180
160
140
120
100
80
(kHz)
60
40
20
Gain Bandwidth Product
0
-0.5
Phase Margin
Gain Bandwidth Product
0.0
0.5
1.0
Common Mode Input Voltage (V)
= 1 Mto V
L
1.5
2.0
2.5
3.0
3.5
DD
4.0
/2, C
4.5
= 60 pF,
L
90
80
70
60
50
40
30
20
10
0
5.0
5.5

FIGURE 2-22: Gain Bandwidth Product, Phase Margin vs. Common Mode Input Voltage.

120
100
80
60 (kHz)
40
20
Gain Bandwidth Product
VDD = 1.4 V C
= 60 pF
L
0
-40-200 20406080
Gain Bandwidth Product
Phase Margin
Ambient Te mperature ( °C)
90
75
60
45
30
Phase Margin (°)
15
0
Phase Margin (°)
FIGURE 2-20: Gain Bandwidth Product, Phase Margin vs. Ambient Temperature with V
= 5.5V.
DD
12
10
8
6
4
Frequency (kHz)
Closed Loop Gain
2
0
0.00 0.00 0.00
10
Closed Loop Gain Frequency
Phase Margin
G = +10 V/V VDD = 5.5 V
Load Capacitance (F)
90
75
60
45
30
15
0
1n100
Phase Margin (°)
FIGURE 2-21: Closed Loop Gain Frequency, Phase Margin vs. Load Capacitance with V
DD
=5.5V.
FIGURE 2-23: Gain Bandwidth Product, Phase Margin vs. Ambient Temperature with
= 1.4V.
V
DD
40
35
30
25
20
(pA)
15
+ISC, VDD = 1.4 V
10
-ISC, VDD = 1.4 V
5
Output Short Circuit Current
0
-40-200 20406080
Ambient Temperature (°C)
-ISC, VDD = 5.5 V
+ISC, VDD = 5.5 V

FIGURE 2-24: Output Short Circuit Current vs. Ambient Temperature vs. Power Supply Voltage.

2002 Microchip Technology Inc. 21668A-page 7
MCP6141/2/3/4
Note: Unless otherwise indicated, V
and V
OUT~VDD
/2.
= +5V, VSS = GND, TA = 25°C, VCM = VDD/2, R
DD
50
45 40
Falling Edge
35
30 25 20
15
Slew Rate (V/ms)
10
Rising Edge
5
0
-40-20 0 20406080 Ambient Temperature (°C)

FIGURE 2-25: Slew Rate vs. Ambient Temperature.

1,000
100
VOL-VSS, VDD = 1.4 V
10
1
Output Voltage Headroom (mV)
1.E-05 1.E-04 1.E-03 1.E-02
10µ 10m1m100µ
Output Current Magnitude (A)
VOL-VSS, VDD = 5.5 V
= 1 Mto V
L
DD
/2, C
= 60 pF,
L
10
VDD = 5.5 V
1
Output Voltage Swing (VP-P)
0.1 100 1k 10k
100 1000 10000
VDD = 1.4 V
Frequency (Hz)

FIGURE 2-28: Output Voltage Swing vs. Frequency vs. Power Supply Voltage.

4.0
VDD = 5.5 V
3.5
RL = 50 k:
3.0
2.5
2.0
1.5
1.0
0.5
Output Voltage Headroom (mV)
0.0
-40 -20 0 20 40 60 80
VOL - V
SS
VDD - V
OH
Ambient Temperature (°C)

FIGURE 2-26: Output Voltage Headroom vs. Output Current Magnitude vs. Power Supply Voltage.

0.08
0.06
0.04
0.02
0.00
-0.02
-0.04
-0.06
Output Voltage (20 mV/div)
-0.08
0.E+00 1.E-04 2.E-04 3.E-04 4.E-04 5.E-04 6.E-04 7.E-04 8.E-04 9.E-04 1.E-03
G = +11 V/V RL = 50 k:
Time (100 µs/div)

FIGURE 2-27: Small Signal Non-Inverting Pulse Response vs. Time.

FIGURE 2-29: Output Voltage Headroom vs. Ambient Temperature with V
0.08
0.06
0.04
0.02
0.00
-0.02
-0.04
-0.06
Output Voltage (20 mV/div)
-0.08
0.E+00 1.E-04 2.E-04 3.E-04 4.E-04 5.E-04 6.E-04 7.E-04 8.E-04 9.E-04 1.E-03
Time (100 µs/div)
= 5.5V.
DD
G = -10 V/V
= 50 k:
R
F

FIGURE 2-30: Small Signal Inverting Pulse Response vs. Time.

21668A-page 8 2002 Microchip Technology Inc.
MCP6141/2/3/4
Note: Unless otherwise indicated, V
and V
OUT~VDD
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
Output Voltage (V)
1.0
0.5
0.E+00 2.E-04 4.E-04 6.E-04 8.E-04 1.E-03 1.E-03 1.E-03 2.E-03 2.E-03 2.E-03
0.0
/2.
G = +11 V/V RL = 50 k:
Time (200 µs/div)
= +5V, VSS = GND, TA = 25°C, VCM = VDD/2, R
DD

FIGURE 2-31: Large Signal Non-Inverting Pulse Response vs. Time.

27.5
25.0
V
on V
OUT
22.5
20.0
17.5
15.0
12.5
10.0
7.5
5.0
2.5
0.E+00 1.E-03 2.E-03 3.E-03 4.E-03 5.E-03 6.E-03 7.E-03 8.E-03 9.E-03 1.E-02
0.0
Chip Select Voltage (V)
G = +11 V/V V
= 3.0 V
IN
V
Hi-Z
OUT
CS Voltage
Time (1 ms/div)
OUT
on
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0

FIGURE 2-34: Large Signal Inverting Pulse Response vs. Time.

Output Voltage (V)
= 1 Mto V
L
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
Output Voltage (V)
1.0
0.5
0.E+00 2.E-04 4.E-04 6.E-04 8.E-04 1.E-03 1.E-03 1.E-03 2.E-03 2.E-03 2.E-03
0.0
5.5
5.0 V
on
OUT
4.5
4.0
3.5
3.0
2.5
2.0
1.5
Output Voltage (V)
1.0
G = +11 V/V
0.5
VIN = 3.0 V
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Time (200 µs/div)
Hysteresis
CS swept high to low
Chip Select Voltage (V)
/2, C
DD
CS swept low to high
= 60 pF,
L
G = -10 V/V RF = 50 k:
V
HI-Z
OUT
FIGURE 2-32: Chip Select (CS
) to Amplifier Output Response Time (MCP6143 only).
6
G = +11 V/V
5
4
3
2
1
0
Input, Output Voltages (V)
0.E+00 5.E-03 1.E-02 2.E-02 2.E-02 3.E-02
-1
V
OUT
V
IN
Time (5 ms/div)
FIGURE 2-33: The MCP6141/2/3/4 family shows no phase reversal (for information only– the Maximum Absolute Input Voltage is still V
- 0.3V and V
SS
DD
+ 0.3V).
FIGURE 2-35: Output Voltage vs. Chip Select (CS
) Voltage (MCP6143 only).
2002 Microchip Technology Inc. 21668A-page 9
MCP6141/2/3/4

3.0 APPLICATIONS INFORMATION

The MCP6141/2/3/4 family of operational amplifiers are fabricated on Microchip’s state-of-the-art CMOS process. They are stable for noise gain of 10 V/V or higher. Microchip also produces a unity gain stable product, the MCP6041/2/3/4 family, which has similar specifications. The MCP6041/2/3/4 family has a band­width of 1.4 kHz at a noise gain of 10 V/V, while the MCP6141/2/3/4 family has a bandwidth of 10 kHz at a noise gain of 10 V/V. These devices are suitable for a wide range of applications requiring very low power consumption. With these op amps, the power supply pin needs to be bypassed with a 0.1 µF capacitor.

3.1 Rail-to-Rail Input

The input stage of these devices uses two differential input stages in parallel; one operates at low V mon mode input voltage) and the other at high V With this topology, the MCP6141/2/3/4 family operates with V Offset Voltage is measured at both V and V
up to 300 mV past either supply rail. The Input
CM
+ 0.3V to ensure proper operation.
DD
CM=VSS

3.2 Output Loads and Battery Life

The MCP6141/2/3/4 op amp family has low quiescent current, which supports battery-powered applications. There is minimal quiescent current glitch when chip select (CS sive current draw and reduced battery life when the part is turned off or on.
Heavy resistive loads at the output can cause exces­sive battery drain. Driving a DC voltage of 2.5V across
a 100 k load resistor will cause the supply current to
increase by 25 µA, depleting the battery 43 times as fast as I
High frequency signals (fast edge rate) across capaci­tive loads will also significantly increase supply current. For instance, a 0.1 µF capacitor at the output presents
an AC impedance of 15.9 k (1/2πfC) to a 100 Hz
sinewave. It can be shown that the average power drawn from the battery by a 5.0 V (1.77 Vrms) under these conditions is:
EQUATION
P
This will drain the battery 18 times as fast as IQ alone.
) is raised or lowered. This prevents exces-
(0.6 µA typ) alone.
Q
SUPPLY
V
()I
DDVSS
5V()0.6µA5.0V
V
()=
+ fC
Q
Lp p()
100Hz 0.1µF⋅⋅+()=
pp
3.0 µW50µW+=
CM
sinewave
p-p
L
(com-
CM
-0.3V
3.3 Rail-to-Rail Output
The MCP6141/2/3/4 family Maximum Output Voltage Swing defines the maximum swing possible under a particular output load. According to the specification table, the output can reach up to 10 mV of either supply
rail with a 50 kΩ load.

3.4 Input Voltage and Phase Reversal

The MCP6141/2/3/4 op amp family uses CMOS tran­sistors at the input. It is designed to prevent phase reversal when the input pins exceed the supply volt­ages. Figure 2-33 shows an input voltage exceeding both supplies without output phase reversal.
The maximum operating V inputs is V
-0.3V and VDD + 0.3V. Voltage on the
SS
that can be applied to the
CM
input that exceeds this absolute maximum rating can cause excessive current to flow in or out of the input
.
pins. Current beyond ±2 mA can cause possible reli­ability problems. Applications that exceed this rating must be externally limited with an input resistor, as shown in Figure 3-1.
R
IN
V
IN
Maximum expected V
()V
R
--------------------------- ------------ ------------------------------ ----------
IN
V
SS
R
----------------------------- ------------ ------------------------------ ---- -
IN
MCP614X
IN
2 mA
Minimum expected V
()
2 mA
FIGURE 3-1: An input resistor, R
V
OUT
DD
IN
,
IN
should be used to limit excessive input current if the inputs exceed the absolute maximum specification.

3.5 Stability

The MCP6141/2/3/4 op amp family is designed to give high bandwidth and faster slew rate for circuits with high noise (G stable MCP6041/2/3/4 op amp family has lower AC performance, but it is preferable for low noise gain applications.
Noise gain is defined to be the gain from a voltage source at the non-inverting input to the output when all other voltage sources are zeroed (shorted out). Noise gain is independent of signal gain and depends only on components in the feedback loop.
) or signal gain. The related unity-gain
n
21668A-page 10 2002 Microchip Technology Inc.
MCP6141/2/3/4
R
G
V
IN
Non-inverting noise gain: 1 + RF/R
V
IN
R
G
Inverting noise gain: 1 + R
R
F
MCP614X
R
F
MCP614X
F/RG
V
+10 V/V
G
+10 V/V
V
OUT
OUT

FIGURE 3-2: Noise gain for inverting and non-inverting amplifier configuration.

Figure 3-2 shows non-inverting and inverting amplifier circuits. In order for the amplifiers to be stable, the noise gain should meet the specified requirement:
Note that the integrator circuit in Figure 3-3 becomes unity gain at high frequencies because of the capaci­tor. Therefore, this circuit is unstable for the MCP6141/2/3/4.

3.6 Capacitive Load and Stability

Driving capacitive loads can cause stability problems with voltage feedback op amps. Figure 2-21 shows how increasing the load capacitance will decrease the phase margin. While a phase margin above 60° is ideal, 45° is on the verge of instability. As can be seen, up to C
= 150 pF can be placed on the MCP6141/2/3/4 op
L
amp outputs without any problems, while 250 pF cre­ates a 45° phase margin.
When the op amp is required to drive large capacitive loads (C Figure 3-4) at the output of the amplifier improves the phase margin. This resistor makes the output load resistive at higher frequencies, which improves the phase margin. The bandwidth reduction caused by the capacitive load, however, is not changed. To select R
ISO
macro model and bench testing to adjust R there is a minimum frequency response peaking.
>150 pF), a small series resistor (R
L
ISO
in
, start with 1 k, then use the MCP6141 SPICE
until
ISO
EQUATION
R
Gn1
Note that an inverting signal gain of G = -9 V/V corre­sponds to a noise gain G
Figure 3-3 shows a unity gain buffer and integrator that are unstable when used with the MCP6141/2/3/4 fam­ily. However, they are suitable for the MCP6041/2/3/4 family.
MCP604X
V
IN
R
V
IN
F
-------+ 10V/V=
R
G
= +10 V/V.
n
V
OUT
Unity gain buffer: Unstable for MCP614X
C
MCP604X
V
OUT
R
2
V
IN
R
1
MCP614X
R
ISO
V
OUT
C
L

FIGURE 3-4: Amplifier circuit for heavy capacitive loads.

3.7 The MCP6143 Chip Select (CS) Option

The MCP6143 is a single amplifier with a chip select (CS
) option. When CS is pulled high, the supply current drops to 20 pA (typ.) and goes through the CS V
. When this happens, the amplifier is put into a high
SS
impedance state. By pulling CS enabled. If the CS
pin is left floating, the amplifier will
low, the amplifier is
not operate properly. Figure 3-5 shows the output voltage and supply current response to a CS
pin to
pulse.
Integrator: Unstable for MCP614X

FIGURE 3-3: Typical Circuits that are not suitable for the MCP6141/2/3/4 family.

2002 Microchip Technology Inc. 21668A-page 11
MCP6141/2/3/4
CS
V
OUT
Hi-Z
V
IL
t
ON
Circuit schematics for different guard ring implementa-
V
IH
t
OFF
Hi-Z
tions are shown in Figure 3-7. Figure 3-7A biases the guard ring to the input common mode voltage, which is most effective for non-inverting gains. Figure 3-7B biases the guard ring to a reference voltage (V
REF
which can be ground), which is useful for inverting gains and precision photo sensing circuits.
,
0.6 µA, typ
I
I
I
VSS
VDD
CS
5 pA, typ
0.6 µA, typ
20 pA, typ
5 pA, typ
5pA, typ
20 pA, typ
5pA, typ

FIGURE 3-5: Timing Diagram for the CS function on the MCP6143 op amp.

3.8 Layout Considerations

Good PC board layout techniques will help you achieve the performance shown in the specifications and typical performance curves. It will also assist in minimizing Electro-Magnetic Compatibility (EMC) issues.
3.8.1 SURFACE LEAKAGE
In applications where low input bias current is critical, PC board surface leakage effects and signal coupling from trace to trace need to be considered.
Surface leakage is caused by a difference in voltage between traces, combined with high humidity, dust or other contamination on the board. Under low humidity conditions, a typical resistance between nearby traces
12
is 10
. A 5V difference would cause 5 pA of current
to flow, which is greater than the input current of the MCP6141/2/3/4 family at 25°C (1 pA, typ).
The simplest technique to reduce surface leakage is using a guard ring around sensitive pins (or traces). The guard ring is biased at the same voltage as the sensitive pin or trace. Figure 3-6 shows an example of a typical layout.
Figure 3-7A
V
DD
MCP614X
V
REF
Figure 3-7B
V
DD
MCP614X
V
REF

FIGURE 3-7: Two possible guard ring connection strategies to reduce surface leakage effects.

3.8.2 COMPONENT PLACEMENT
In order to help prevent crosstalk:
• Separate digital components from analog compo­nents, and low speed devices from high speed devices.
• Keep sensitive traces short and straight. Separate them from interfering components and traces. This is especially important for high frequency (low rise time) signals.
• Use a 0.1 µF supply bypass capacitor within 0.1” (2.5 mm) of the V to the ground plane.
pin. It must connect directly
DD
IN- IN+
V
SS
Guard Ring

FIGURE 3-6: Example of Guard Ring layout.

21668A-page 12 2002 Microchip Technology Inc.
MCP6141/2/3/4
3.8.3 SIGNAL COUPLING
The input pins of the MCP6141/2/3/4 family of op amps are high impedance, which allows noise injection. This noise can be capacitively or magnetically coupled. In either case, using a ground plane helps reduce noise injection.
When noise is coupled capacitively, the ground plane provides shunt capacitance to ground for high fre­quency signals (Figure 3-8 shows the equivalent cir­cuit). The coupled current, I (V
TRACE 2
) on the victim trace when the trace to ground plane capacitance (C resistor (R
) is small. Increasing the distance between
T2
, produces a lower voltage
M
) is large and the terminating
SH2
traces and using wider traces also helps.
C
V
TRACE 1
I
M
C
SH1
C
SH2
V
M
TRACE 2
R
T2
FIGURE 3-8: Equivalent circuit for capacitive coupling between traces on a PC board (with ground plane).
When noise is coupled magnetically, the ground plane reduces the mutual inductance between traces. This occurs because the ground return current at high fre­quencies will follow a path directly beneath the signal trace. Increasing the separation between traces makes a significant difference. Changing the direction of one of the traces can also reduce magnetic coupling.
If these techniques are not enough, it may help to place guard traces next to the victim trace. They should be on both sides of the victim trace and be as close as possi­ble. Connect the guard traces to ground plane at both ends and in the middle for long traces.

3.9 Typical Applications

3.9.1 BATTERY CURRENT SENSING
The MCP6141/2/3/4 op amps’ Common Mode Input Range, which goes 300 mV beyond both supply rails, supports their use in high side and low side battery current sensing applications. The very low quiescent current (0.6 µA, typ.) help prolong battery life, while the rail-to-rail output allows you to detect low currents.
Figure 3-9 shows a high side battery current sensor cir­cuit. The feedback and input resistors are sized to min­imize power losses. The battery current (I
the 1 k resistor causes its top terminal to be more
negative than the bottom terminal. This keeps the com-
mon mode input voltage of the op amp ≤ V
within its allowed range. The output of the op amp can reach V
- 0.1 mV (see Figure 2-26), which is a
DD
smaller error than the offset voltage.
V
1k
+1.4 V
to
DD
I
DD
100 k
V
DD
MCP614X
V
5.5 V
1M

FIGURE 3-9: High Side Battery Current Sensor.

3.9.2 SUMMING AMPLIFIER
The rail-to-rail input and output, the 600 nA (typ.) qui­escent current and the wide bandwidth make the MCP6141/2/3/4 family of operational amplifiers fit well in a summing amplifier circuit, as shown in Figure 3-10.
SS
) through
DD
, which is
DD
R
1
I
1
R
2
I
2
R
3
I
3
R
F
I
F
-
+
V
OUT
V
V
V
V
REF
1
2
3
MCP614X

FIGURE 3-10: Summing amplifier circuit.

2002 Microchip Technology Inc. 21668A-page 13
MCP6141/2/3/4
In this configuration, the amplifier outputs the sum of the three input voltages. The ratio of the sum and the output voltage is defined using the feedback and input resistors. V family of amplifiers is stable for noise gain (G V or higher. The G amplifier is calculated as shown below:
EQUATION
is used to offset the output voltage. This
REF
and the signal gain of the summing
n
n
) of 10 V/
Noise Gain:
1
------
R
1
----- -++
R
2
3
1
G
n

1R
------
+ 10 V/V=
F

R
1
Signal Gain:
R
F
V
V
01
V
02
V
03
V
04
V
OUTV01V02V03V04
V
OUT
R
F
+++=
V
-----------------------
×=
---------
---------
---------
 
REFV1
R
1
R
1
R
F
×=
V
2
R
2
R
F
×=
V
3
R
3
R
R
F
------
R
2
V
REFV2
-----------------------
R
2
R
F
×=
------+++
V
REF
R
3
V
REFV3
-----------------------++ V
R
3
F
1
------
R
1
1
+=
REF
At a noise gain of 10 V/V, the amplifier bandwidth is approximately 10 kHz. The bandwidth to quiescent cur­rent ratio of MCP6141/2/3/4 makes this device an appropriate choice for battery-powered applications.
21668A-page 14 2002 Microchip Technology Inc.

4.0 SPICE MACRO MODEL

The Spice macro model for the MCP6141, MCP6142, MCP6143 and MCP6144 simulates the typical ampli­fier performance of offset voltage, DC power supply rejection, input capacitance, DC common mode rejec­tion, open loop gain over frequency, phase margin, out­put swing, DC power supply current, power supply current change with supply voltage, input common mode range, output voltage range vs. load and input voltage noise.
The characteristics of the MCP6141, MCP6142, MCP6143 and MCP6144 amplifiers are similar in terms of performance and behavior. This single op amp macro model supports all four devices, with the excep­tion of the chip select function of the MCP6143, which is not modeled.
The listing for this macro model is shown on the next page. The most recent revision of the model can be downloaded from Microchip’s web site at
w
ww.microchip.com.
MCP6141/2/3/4
2002 Microchip Technology Inc. 21668A-page 15
MCP6141/2/3/4
Software License Agreement
The software supplied herewith by Microchip Technology I ncorporated (the “Company”) is intended and supplied to you, the Com­pany’s customer, for use solely and exclusively on Microchip products.
The software is owned by the Company and/or its supplier, and is protected under applicable copyright laws. All rights are reserved. Any use in violation of the foregoing restrictions may subject the user to criminal sanctions under applicable laws, as well as to civil liability for the breach of the terms and conditions of this license.
THIS SOFTWARE IS PROVIDED IN AN “AS IS” CONDITION. NO WARRANTIES, WHETHER EXPRESS, IMPLIED OR STATU­TORY, INCLUDING, BUT NOT LIMITED TO, IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICU­LAR PURPOSE APPLY TO THIS SOFTWARE. THE COMPANY SHALL NOT, IN ANY CIRCUMSTANCES, BE LIABLE FOR SPECIAL, INCIDENTAL OR CONSEQUENTIAL DAMAGES, FOR ANY REASON WHATSOEVER.
.SUBCKT MCP6141 1 2 3 4 5 * | | | | | * | | | | Output * | | | Negative Supply * | | Positive Supply * | Inverting Input * Non-inverting Input * * Macromodel for the MCP6141/2/3/4 op amp family: * MCP6141 (single) * MCP6142 (dual) * MCP6143 (single w/ CS; chip select is not modeled) * MCP6144 (quad) * * Revision History: * REV A: 06-Sep-02, KEB (created model) * * Recommendations: * Use PSPICE (or SPICE 2G6; other simulators may require translation) * For a quick, effective design, use a combination of: data sheet * specs, bench testing, and simulations with this macromodel * For high impedance circuits, set GMIN=100F in the .OPTIONS * statement * * Supported: * Typical performance at room temperature (25 degrees C) * DC, AC, Transient, and Noise analyses. * Most specs, including: offsets, DC PSRR, DC CMRR, input impedance, * open loop gain, voltage ranges, supply current, ... , etc. * * Not Supported: * Chip select (MCP6143) * Variation in specs vs. Power Supply Voltage * Distortion (detailed non-linear behavior) * Temperature analysis * Process variation * Behavior outside normal operating region * * Input Stage V10 3 10 -300M R10 10 11 258K R11 10 12 258K C11 11 12 3.53P C12 1 0 6.00P E12 1 14 POLY(4) 20 0 21 0 26 0 27 0 1.00M 117 117 1 1 I12 14 0 1.50P M12 11 14 15 15 NMI L=2.00U W=5.00U C13 14 2 6.00P M14 12 2 15 15 NMI L=2.00U W=5.00U I14 2 0 500E-15 C14 2 0 6.00P
2002 Microchip Technology Inc. 21668A-page 16
I15 15 4 300N V16 16 4 200M D16 16 15 DL V13 3 13 50.0M D13 14 13 DL * * Noise, PSRR, and CMRR I20 21 20 423U D20 20 0 DN1 D21 0 21 DN1 G26 0 26 POLY(1) 3 4 308U -56.0U R26 26 0 1 G27 0 27 POLY(2) 1 3 2 4 -979U 178U 178U R27 27 0 1 * * Open Loop Gain, Slew Rate G30 0 30 POLY(1) 12 11 0 1.00K R30 30 0 1 E31 31 0 POLY(1) 3 4 29.3 1.05 D31 30 31 DL E32 0 32 POLY(1) 3 4 57.0 2.04 D32 32 30 DL G33 0 33 POLY(1) 30 0 0 562 R33 33 0 1 C33 33 0 838M G34 0 34 POLY(1) 33 0 0 1.00 R34 34 0 1.00 C34 34 0 8.53U G35 0 35 POLY(2) 34 0 33 34 0 1.00 1.22 R35 35 0 1.00 * * Output Stage G50 0 50 POLY(1) 57 5 0 1.00 D51 50 51 DL R51 51 0 1K D52 52 50 DL R52 52 0 1K G53 3 0 POLY(1) 51 0 300N 1M G54 0 4 POLY(1) 52 0 300N -1M E55 55 0 POLY(2) 3 0 51 0 -10M 1 -100M D55 57 55 DLS E56 56 0 POLY(2) 4 0 52 0 10M 1 -100M D56 56 57 DLS G57 0 57 POLY(3) 3 0 4 0 35 0 0 17.8U 17.8U 35.5U R57 57 0 28.2K R58 57 5 1.00 C58 5 0 2.00P * * Models .MODEL NMI NMOS .MODEL DL D N=1 IS=1F .MODEL DLS D N=10M IS=1F .MODEL DN1 D IS=1F KF=1.17E-18 AF=1 * .ENDS MCP6141
MCP6141/2/3/4
2002 Microchip Technology Inc. 21668A-page 17
MCP6141/2/3/4

5.0 PACKAGING INFORMATION

5.1 Package Marking Information

8-Lead PDIP (300 mil)
XXXXXXXX XXXXXNNN
YYWW
8-Lead SOIC (150 mil)
XXXXXXXX XXXXYYWW
NNN
8-Lead MSOP
XXXXXX YWWNNN
Example:
MCP6141
I/P058
0223
Example:
MCP6142
I/SN0223
058
Example:
6143I
223058
Legend: XX...X Customer specific information*
YY Year code (last 2 digits of calendar year) WW Week code (week of January 1 is week ‘01’) NNN Alphanumeric traceability code
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line thus limiting the number of available characters for customer specific information.
* Standard marking consists of Microchip part number, year code, week code, traceability code (facility
code, mask rev#, and assembly code). For marking beyond this, certain price adders apply. Please check with your Microchip Sales Office.
21668A-page 18 2002 Microchip Technology Inc.

5.1 Package Marking Information (Continued)

14-Lead PDIP (300 mil) (MCP6144) Example:
MCP6141/2/3/4
XXXXXXXXXXXXXX XXXXXXXXXXXXXX
YYWWNNN
14-Lead SOIC (150 mil) (MCP6144)
XXXXXXXXXX XXXXXXXXXX
YYWWNNN
14-Lead TSSOP (MCP6144)
XXXXXX
YYWW
NNN
MCP6144-I/P
0223058
Example:
MCP6144ISL
0223058
Example:
6144ST
0223
058
2002 Microchip Technology Inc. 21668A-page 19
MCP6141/2/3/4
8-Lead Plastic Dual In-line (P) – 300 mil (PDIP)
E1
D
2
n
E
β
eB
Number of Pins Pitch Top to Seating Plane A .140 .155 .170 3.56 3.94 4.32 Molded Package Thickness A2 .115 .130 .145 2.92 3.3 0 3.68 Base to Seating P lane A1 .015 0.38 Shoulder to Shoulder Width E .300 .313 .325 7.62 7.94 8.26 Molded Package Width E1 .240 .250 .260 6.10 6.35 6.60 Overall Length D .360 .373 .385 9.14 9.46 9.78 Tip to Seating Plane L .125 .130 .135 3.18 3.30 3.43 Lead Thickness Upper Lead Width B1 .045 .058 .070 1.14 1.46 1.78 Lower Lead Width B .014 .018 .022 0.36 0.46 0.56 Overall Row Spacing § eB .310 .370 .430 7.87 9.40 1 0.92 Mold Draft Angle Top Mold Draft Angle Bottom * Controlling Parameter
§ Significant Characteristic
Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side. JEDEC Equivalent: MS-001 Drawing No. C04-018
Dimension Limits MIN NOM MAX MIN NOM MAX
1
α
A
c
Units INCHES* MILLIMETERS
n p
c
α β
.008 .012 .015 0.20 0.29 0.38
A1
B1
B
88
.100 2.54
51015 51015 51015 51015
A2
L
p
21668A-page 20 2002 Microchip Technology Inc.
8-Lead Plastic Small Outline (SN) – Narrow, 150 mil (SOIC)
E
E1
p
D
2
MCP6141/2/3/4
B
Number of Pins Pitch
Foot Angle Lead Thickness
Mold Draft Angle Top Mold Draft Angle Bottom
* Controlling Paramete r
§ Significant Characteristic
Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side. JEDEC Equivalent: MS-012 Drawing No. C04-057
n
45°
c
β
n p
φ
c
α
β
1
h
A
φ
L
048048
A1
MILLIMETERSINCHES*Units
1.27.050
α
A2
MAXNOMMINMAXNOMMINDimension Limits
88
1.751.551.35.069.061.053AOverall Height
1.551.421.32.061.056.052A2Molded Package Thickness
0.250.180.10.010.007.004A1Standoff §
6.206.025.79.244.237.228EOverall Width
3.993.913.71.157.154.146E1Molded Package Width
5.004.904.80.197.193.189DOverall Length
0.510.380.25.020.015.010hChamfer Distance
0.760.620.48.030.025.019LFoot Length
0.250.230.20.010.009.008
0.510.420.33.020.017.013BLead Width 1512015120 1512015120
2002 Microchip Technology Inc. 21668A-page 21
MCP6141/2/3/4
8-Lead Plastic Micro Small Outline Package (MS) (MSOP)
p
B
n 1
c
(F)
β
Dimension Limits
Number of Pins
Pitch
Overall Height
Molded Package Thickness
Standoff §
Overall Width
Molded Package Width
Overall Length
Foot Length
Foot Angle
Lead Thickness
Lead Width
Mold Draft Angle Top
Mold Draft Angle Bottom
*Controlling Parameter
§ Significant Characteristic
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" (0.254mm ) per side.
Drawing No. C04-111
E1
E
D
2
A
Units
n p
A
A2
A1
E
E1
D
L
φ
c
B
α β
MIN
.030
.002
.184
.114
.114
.016
.004
.010
φ
L
INCHES
NOM
.026
.034
.193
.118
.118
.022
.037.035FFootprint (Reference)
0
.006
.012
A1
8
.044
.038
.006
.200
.122
.122
.028
6
.008
.016
7
7
MILLIMETERS*
MINMAX NOM
0.65
0.76
0.05
4.67
2.90
2.90
0.40
0
0.10
0.25
0.86
4.90
3.00
3.00
0.55
0.15
0.30
α
A2
MAX
8
1.18
0.97
0.15
.5.08
3.10
3.10
0.70
1.000.950.90.039
6
0.20
0.40
7
7
21668A-page 22 2002 Microchip Technology Inc.
14-Lead Plastic Dual In-line (P) – 300 mil (PDIP)
E1
D
2
MCP6141/2/3/4
n
E
β
eB
Number of Pins Pitch Top to Seating Plane A .140 .155 .170 3.56 3.94 4.32 Molded Package Thickness A2 .115 .130 .145 2.92 3.30 3.68 Base to Seating Plane A1 .015 0.38 Shoulder to Shoulder Width E .300 .313 .325 7.62 7.94 8.26 Molded Package Width E1 .240 .250 .260 6.10 6.35 6.60 Overall Length D .740 .750 .760 18.80 19 .05 19.30 Tip to Seating Plane L .125 .130 .135 3.18 3.30 3.43 Lead Thickness Upper Lead Width B1 .045 .058 .070 1.14 1.46 1.78 Lower Lead Width B .014 .018 .022 0.36 0.46 0.56 Overall Row Spacing § eB .310 .370 .430 7.87 9.40 10.92 Mold Draft Angle Top Mold Draft Angle Bottom * Controlling Parameter
§ Significant Characteristic
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side. JEDEC Equivalent: MS-001 Drawing No. C04-005
1
A
c
A1
Dimension Limits MIN NOM MAX MIN NOM MAX
Units INCHES* MILLIMETERS
n p
c
α
β
.008 .012 .015 0.20 0.29 0.38
5 10 1 5 5 10 15 5 10 1 5 5 10 15
B1
B
14 14
.100 2.54
α
A2
L
p
2002 Microchip Technology Inc. 21668A-page 23
MCP6141/2/3/4
14-Lead Plastic Small Outline (SL) – Narrow, 150 mil (SOIC)
E
E1
p
D
2
B
n
1
45°
c
β
Number of Pins Pitch
Foot Angle Lead Thickness
Mold Draft Angle Top Mold Draft Angle Bottom * Controlling Paramete r
§ Significant Characteristic
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side. JEDEC Equivalent: MS-012 Drawing No. C04-065
h
A
φ
L
n p
φ
c
α β
A1
048048
α
MILLIMETERSINCHES*Units
1.27.050
A2
MAXNOMMINMAXNOMMINDimension Limits
1414
1.751.551.35.069.061.053AOverall Height
1.551.421.32.061.056.052A2Molded Package Thickness
0.250.180.10.010.007.004A1Standoff §
6.205.995.79.244.236.228EOverall Width
3.993.903.81.157.154.150E1Molded Package Width
8.818.698.56.347.342.337DOverall Length
0.510.380.25.020.015.010hChamfer Distance
1.270.840.41.050.033.016LFoot Len gth
0.250.230.20.010.009.008
0.510.420.36.020.017.014BLead Width 1512015120 1512015120
21668A-page 24 2002 Microchip Technology Inc.
MCP6141/2/3/4
14-Lead Plastic Thin Shrink Small Outline (ST) – 4.4 mm (TSSOP)
E
E1
p
D
2
n
B
1
A
c
φ
β
Number of Pins Pitch
Foot Angle Lead Thickness
Mold Draft Angle Top Mold Draft Angle Bottom * Controlling Parameter
§ Significant Characteristic
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .005” (0.127mm) per side. JEDEC Equivalent : MO-153 Drawing No. C04-087
n p
φ
c
α
β
L
MILLIMETERS*INCHESUnits
0.65.026
α
A2A1
MAXNOMMINMAXNOMMINDimension Limits
1414
1.10.043AOverall Height
0.950.900.85.037.035.033A2Molded Package Thickness
0.150.100.05.006.004.002A1Standoff §
6.506.386.25.256.251.246EOverall Width
4.504.404.30.177.173.169E1Molded Package Width
5.105.004.90.201.197.193DMolded Package Length
0.700.600.50.028.024.020LFoot Len gth 840840
0.200.150.09.008.006.004
0.300.250.19.012.010.007B1Lead Width
10501050 10501050
2002 Microchip Technology Inc. 21668A-page 25
MCP6141/2/3/4
NOTES:
21668A-page 26 2002 Microchip Technology Inc.
MCP6141/2/3/4
ON-LINE SUPPORT
Microchip provides on-line support on the Microchip World Wide Web site.
The web site is used by Microchip as a means to make files and information easily available to customers. To view the site, the user must have access to the Internet and a web browser, such as Netscape Internet Explorer. Files are also available for FTP download from our FTP site.
Connecting to the Microchip Internet Web Site
The Microchip web site is available at the following URL:
www.microchip.com
The file transfer site is available by using an FTP ser­vice to connect to:
ftp://ftp.microchip.com
The web site and file transfer site provide a variety of services. Users may download files for the latest Development Tools, Data Sheets, Application Notes, User's Guides, Articles and Sample Programs. A vari­ety of Microchip specific business information is also available, including listings of Microchip sales offices, distributors and factory representatives. Other data available for consideration is:
• Latest Microchip Press Releases
• Technical Support Section with Frequently Asked Questions
• Design Tips
• Device Errata
• Job Postings
• Microchip Consultant Program Member Listing
• Links to other useful web sites related to Microchip Products
• Conferences for products, Development Systems, technical information and more
• Listing of seminars and events
®
or Microsoft
SYSTEMS INFORMATION AND UPGRADE HOT LINE
The Systems Information and Upgrade Line provides system users a listing of the latest versions of all of Microchip's development systems software products.
®
Plus, this line provides information on how customers can receive the most current upgrade kits.The Hot Line Numbers are:
1-800-755-2345 for U.S. and most of Canada, and
1-480-792-7302 for the rest of the world.
092002
2002 Microchip Technology Inc. DS21668A-page 27
MCP6141/2/3/4
READER RESPONSE
It is our intention to provide you with the best documentation possible to ensure successful use of your Microchip prod­uct. If you wish to provide your comments on organization, clarity, subject matter, and ways in which our documentation can better serve you, please FAX your comments to the Technical Publications Manager at (480) 792-4150.
Please list the following information, and use this outline to provide us with your comments about this document.
To :
RE: Reader Response
From:
Application (optional):
Would you like a reply? Y N
Device:
Questions:
1. What are the best features of this document?
2. How does this document meet your hardware and software development needs?
3. Do you find the organization of this document easy to follow? If not, why?
Technical Publications Manager
Name
Company
Address
City / State / ZIP / Country
Telephone: (_______) _________ - _________
MCP6141/2/3/4
Literature Number:
Total Pages Sent ________
FAX: (______) _________ - _________
DS21668A
4. What additions to the document do you think would enhance the structure and subject?
5. What deletions from the document could be made without affecting the overall usefulness?
6. Is there any incorrect or misleading information (what and where)?
7. How would you improve this document?
DS21668A-page 28 2002 Microchip Technology Inc.
MCP6141/2/3/4
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO. X /XX
Device
PackageTemper atu re
Range
Device: MCP6141: CMOS Single Op Amp
MCP6141T: CMOS Single Op Amp
MCP6142: CMOS Dual Op Amp MCP6142T: CMOS Dual Op Amp
MCP6143: CMOS Single Op Amp w/CS MCP6143T: CMOS Single Op Amp w/CS
MCP6144: CMOS Quad Op Amp MCP6144T: CMOS Quad Op Amp
(Tape and Reel for SOIC, MSOP)
(Tape and Reel for SOIC and TSSOP)
(Tape and Reel for SOIC and MSOP)
(Tape and Reel for SOIC and TSSOP)
Function Function
Examples:
a) MCP6141-I/P: Industrial tempe rature,
PDIP package.
b) MCP6141T-I/SN: Tape and Reel, Indus-
trial temperature, SOIC package.
a) MCP6142-I/SN: Industrial temperature,
SOIC package .
b) MCP6142-I/MS: Industrial temperature,
MSOP package.
a) MCP6143-I/MS: Industrial temperature,
MSOP package.
b) MCP6143-I/P: Industrial tempe rature,
PDIP package.
Temperature Range: I = -40°C to +85°C
Package: MS = Plastic MSOP, 8-lead
P = Plastic DIP (300 mil Bo dy), 8-lead, 14-lead SN = Plastic SOIC (150 mil Body), 8-lead SL = Plastic SOIC (150 mil Body), 14-lead ST = Plastic TSSOP ( 4.4mm Body), 14-lead
a) MCP6144-I/SL: Industrial temperature,
SIOC package .
b) MCP6144T-I/ST: Tape and Reel, Indus-
trial temperature, TSSOP package.
Sales and Support
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recom­mended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1. Your local Microchip sales office
2. The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277
3. The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
New Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
2002 Microchip Technology Inc. DS21668A-page 29
MCP6141/2/3/4
NOTES:
DS21668A-page 30 2002 Microchip Technology Inc.
Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. No representation or warranty is given and no liability is assumed by Micr ochip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual propert y rights arising from such use or otherwise. Use of Microchip’s products as critical com­ponents in life support systems is not authorized except with express written approval by Microchip. No licenses are con­veyed, implicitly or otherwise, under any intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, K
EELOQ
MPLAB, PIC, PICmicro, PICSTART and PRO MATE are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries.
FilterLab, microID, MXDEV, MXLAB, PICMASTER, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A.
dsPIC, dsPICDEM.net, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, microPort, Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM, PICC, PICDEM, PICDEM.net, rfPIC, Select Mode and Total Endurance are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries.
Serialized Quick Turn Programming (SQTP) is a service mark of Microchip Technology Incorporated in the U.S.A.
All other trademarks mentioned herein are property of their respective companies.
© 2002, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved.
Printed on recycled paper.
,
Microchip received QS-9000 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona in July 1999 and Mountain View, California in March 2002. The Company’s quality system processes and procedures are QS-9000 compliant for its PICmicro devices, Serial EEPROMs, microperipherals, non-volatile memory and analog products. In addition, Microchip’s qua lity system for the design and manufacture of development systems is ISO 9001 certified.
®
8-bit MCUs, KEEL
®
code hopping
OQ
2002 Microchip Technology Inc. DS21668A - page 31
M
W
ORLDWIDE SALES AND SERVICE
AMERICAS
Corporate Office
2355 West Chandler B lvd. Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: 480-792-7627 Web Address: http://www.microchip.com
Rocky Mountain
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Atlanta
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Boston
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Chicago
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Detroit
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Kokomo
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New York
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San Jose
Microchip Technology Inc. 2107 North First S treet, Suite 590 San Jose, CA 95131 Tel: 408-436-7950 Fax: 408-436-7955
Toro nt o
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ASIA/PACIFIC
Australia
Microchip Technology Australia Pty Ltd Suite 22, 41 Rawson Street Epping 2121, NSW Australia Tel: 61-2-9868-6733 Fax: 61-2-9868-6755
China - Beijing
Microchip Technology Consulting (Shanghai) Co., Ltd., Beijing Liaison Office Unit 915 Bei Hai Wan Tai Bldg. No. 6 Chaoyangmen Beidajie Beijing, 100027, No. China Tel: 86-10-852821 00 Fax: 86-10-85282104
China - Chengdu
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China - Fuzhou
Microchip Technology Consulting (Shanghai) Co., Ltd., Fuzhou Liaison Office Unit 28F, World Trade Plaza No. 71 Wusi Road Fuzhou 350001, China Tel: 86-591-75035 06 Fax: 86-591-7503521
China - Shanghai
Microchip Technology Consulting (Shanghai) Co., Ltd. Room 701, Bldg. B Far East International Plaza No. 317 Xian Xia Road Shanghai, 200051 Tel: 86-21-6275-5700 Fax: 86-21-6275 -5060
China - Shenzhen
Microchip Technology Consulting (Shanghai) Co., Ltd., Shenzhen L iaison Office Rm. 1315, 13/F, Shenzhen Kerry Centre, Renminnan Lu Shenzhen 518001, Ch ina Tel: 86-755-23503 61 Fax: 86-755-2366086
China - Hong Kong SAR
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India
Microchip Technology Inc. India Liaison Office Divyasree Chambers 1 Floor, Wing A (A3/A4) No. 11, O’Shaugnessey Road Bangalore, 560 025, India Tel: 91-80-229006 1 Fax: 91-80-2290062
Japan
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Korea
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Singapore
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Ta iw an
Microchip Technology (Barbados) Inc., Taiwan Branch 11F-3, No. 207 Tung Hua North Road Taipei, 105, Taiwan Tel: 886-2-2717-7175 Fax: 886-2-2545-0139
EUROPE
Austria
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Denmark
Microchip Technology Nordic ApS Regus Business Centre Lautrup hoj 1-3 Ballerup DK-2750 Denmark Tel: 45 4420 9895 Fax: 45 4420 9910
France
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Germany
Microchip Technology GmbH Steinheilstrasse 10 D-85737 Ismaning, Germany Tel: 49-89-627-144 0 Fax: 49-89-627-144-44
Italy
Microchip Technology SRL Centro Direzionale Colleoni Palazzo Taurus 1 V. Le Colleoni 1 20041 Agrate Brianza Milan, Italy Tel: 39-039-65791-1 Fax: 39-039-689988 3
United Kingdom
Microchip Ltd. 505 Eskdale Road Winnersh Triangle Wokingham Berkshire, England RG41 5TU Tel: 44 118 921 5869 Fax: 44-118 921-5820
08/01/02
DS21668A-page 32 2002 Microchip Technology Inc.
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