MICROCHIP MCP6021R, MCP6022, MCP6023, MCP6024 Technical data

MCP6021/1R/2/3/4

Rail-to-Rail Input/Output, 10 MHz Op Amps

Features

• Rail-to-Rail Input/Output

• Wide Bandwidth: 10 MHz (typ.)

• Low Noise: 8.7 nV/√Hz, at 10 kHz (typ.)

• Low Offset Voltage:

- Industrial Temperature: ±500 μV (max.)

- Extended Temperature: ±250 μV (max.)

• Mid-Supply V

: MCP6021 and MCP6023

REF

• Low Supply Current: 1 mA (typ.)

• Total Harmonic Distortion: 0.00053% (typ., G = 1)

• Unity Gain Stable

• Power Supply Range: 2.5V to 5.5V

• Temperature Range:

- Industrial: -40°C to +85°C

- Extended: -40°C to +125°C

Typical Applications

• Automotive

• Driving A/D Converters

• Multi-Pole Active Filters

• Barcode Scanners

• Audio Processing

• Communications

• DAC Buffer

• Test Equipment

• Medical Instrumentation

Available Tools

• SPICE Macro Model (at www.microchip.com)

•FilterLab

®

software (at www.microchip.com)

Typical Application

Photo

Detector

100 pF

Transimpedance Amplifier

5.6 pF

100 kΩ

MCP6021

VDD/2

Description

The MCP6021, MCP6021R, MCP6022, MCP6023 and MCP6024 from Microchip Technology Inc. are rail-torail input and output op amps with high performance. Key specifications include: wide bandwidth (10 MHz), low noise (8.7 nV/√Hz), low input offset voltage and low distortion (0.00053% THD+N). The MCP6023 also offers a Chip Select pin (CS

) that gives power savings

when the part is not in use. The single MCP6021 and MCP6021R are available in

SOT-23-5. The single MCP6021, single MCP6023 and dual MCP6022 are available in 8-lead PDIP, SOIC and TSSOP. The Extended Temperature single MCP6021 is available in 8-lead MSOP. The quad MCP6024 is offered in 14-lead PDIP, SOIC and TSSOP packages.

The MCP6021/1R/2/3/4 family is available in Industrial and Extended temperature ranges. It has a power supply range of 2.5V to 5.5V.

Package Types

MCP6021

SOT-23-5

V

1

OUT

V

2

SS

VIN+

3

MCP6021R

SOT-23-5

V

1

OUT

V

2

DD

VIN+

3

MCP6021

PDIP SOIC,

MSOP, TSSOP

NC

1

–

V

2

IN

VIN+

3

V

4

SS

5

4

5

4

8 7 6 5

V

DD

VIN–

V

SS

VIN–

NC V

DD

V

OUT

V

REF

V

V V

V

V V

V

MCP6022

PDIP SOIC, TSSOP

1

OUTA

–

2

INA

+

3

INA

V

4

SS

MCP6023

PDIP SOIC, TSSOP

NC

1

VIN–

2

+

V

3

IN

V

4

SS

MCP6024

PDIP SOIC, TSSOP

1

OUTA

–

2

INA

+

3

INA

V

4

DD

+

5

INB

–

6

INB

7

OUTB

14 13 12 11 10

V

8

DD

V

7

OUTB

V

–

6

INB

+

V

5

INB

CS

8

V

7

DD

V

6

OUT

V

5

REF

V

OUTD

V

–

IND

+

V

IND

V

SS

V

+

INC

–

V

9

INC

V

8

OUTC

MCP6021/1R/2/3/4

1.0 ELECTRICAL CHARACTERISTICS

† Notice: Stresses above those listed under “Absolute

Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those

Absolute Maximum Ratings †

indicated in the operational listings of this specification is not

implied. Exposure to maximum rating conditions for extended

VDD–VSS........................................................................7.0V

All Inputs and Outputs.................... V

Difference Input Voltage ...................................... |V

– 0.3V to VDD+0.3V

SS

DD–VSS

|

periods may affect device reliability.

Output Short Circuit Current ..................................continuous

Current at Input Pins ....................................................±2 mA

Current at Output and Supply Pins ............................±30 mA

Storage Temperature.....................................-65°C to +150°C

Junction Temperature..................................................+150°C

ESD Protection on all pins (HBM; MM)................ ≥ 2 kV; 200V

DC ELECTRICAL CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/2, V

=10kΩ to VDD/2.

and R

L

Parameters Sym Min Typ Max Units Conditions

Input Offset

Input Offset Voltage:

Industrial Temperature Parts V Extended Temperature Parts V Extended Temperature Parts V

Input Offset Voltage Temperature Drift ΔV

OS

/ΔT

Power Supply Rejection Ratio PSRR 74 90 — dB V

Input Current and Impedance

Input Bias Current I

Industrial Temperature Parts I

Extended Temperature Parts I Input Offset Current I Common-Mode Input Impedance Z Differential Input Impedance Z

B

OS

CM

DIFF

Common-Mode

Common-Mode Input Range V

CMR

Common-Mode Rejection Ratio CMRR 74 90 — dB V

CMRR 70 85 — dB V CMRR 74 90 — dB V

Voltage Reference (MCP6021 and MCP6023 only)

Accuracy (V

V

REF

V

Temperature Drift ΔV

REF

REF–VDD

/2) V

REF_ACC

/ΔT

REF

Open-Loop Gain

DC Open-Loop Gain (Large Signal) A

OL

Output

Maximum Output Voltage Swing V Output Short Circuit Current I

OL

, V

SC

I

SC

Power Supply

Supply Voltage V Quiescent Current per Amplifier I

S

Q

-500 — +500 μVVCM = 0V

-250 — +250 μVVCM = 0V, VDD = 5.0V

-2.5 — +2.5 mV VCM = 0V, VDD = 5.0V = -40°C to +125°C

T

A

—±3.5—μV/°C TA = -40°C to +125°C

A

CM

—1—pA — 30 150 pA TA = +85°C — 640 5,000 pA TA = +125°C —±1—pA —1013||6 — Ω||pF —1013||3 — Ω||pF

VSS-0.3 — VDD+0.3 V

DD

-50 — +50 mV — ±100 — μV/°C TA = -40°C to +125°C

A

90 110 — dB VCM = 0V,

V

OUT

OHVSS

+15 — VDD-20 mV 0.5V output overdrive —±30—mAVDD = 2.5V —±22—mAVDD = 5.5V

2.5 — 5.5 V

0.5 1.0 1.35 mA IO = 0

= 0V

= 5V, VCM = -0.3V to 5.3V = 5V, VCM = 3.0V to 5.3V = 5V, VCM = -0.3V to 3.0V

= VSS+0.3V to VDD-0.3V

OUT

≈ VDD/2

MCP6021/1R/2/3/4

AC ELECTRICAL CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/2,

≈ VDD/2, RL =10kΩ to VDD/2 and CL = 60 pF.

V

OUT

Parameters Sym Min Typ Max Units Conditions

AC Response

Gain Bandwidth Product GBWP — 10 — MHz Phase Margin at Unity-Gain PM — 65 — ° G = +1 Settling Time, 0.2% t

SETTLE

Slew Rate SR — 7.0 — V/μs

Total Harmonic Distortion Plus Noise

f = 1 kHz, G = +1 V/V THD+N — 0.00053 — % V

f = 1 kHz, G = +1 V/V, R

= 600Ω THD+N — 0.00064 — % V

L

f = 1 kHz, G = +1 V/V THD+N — 0.0014 — % V f = 1 kHz, G = +10 V/V THD+N — 0.0009 — % V f = 1 kHz, G = +100 V/V THD+N — 0.005 — % V

Noise

Input Noise Voltage E Input Noise Voltage Density e Input Noise Current Density i

ni

— 250 — ns G = +1, V

OUT

= 5.0V, BW = 22 kHz

V

DD

OUT

= 5.0V, BW = 22 kHz

V

DD

OUT

= 100 mV

OUT

= 0.25V to 3.25V (1.75V ± 1.50VPK),

= 4V

, VDD = 5.0V, BW = 22 kHz

P-P

= 4V

, VDD = 5.0V, BW = 22 kHz

P-P

= 4V

, VDD = 5.0V, BW = 22 kHz

P-P

—2.9—μVp-p f = 0.1 Hz to 10 Hz —8.7—nV/√Hz f = 10 kHz —3—fA/√Hz f = 1 kHz

p-p

MCP6023 CHIP SELECT (CS

) ELECTRICAL CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, T

≈ VDD/2, RL =10kΩ to VDD/2 and CL = 60 pF.

V

OUT

Parameters Sym Min Typ Max Units Conditions

CS

Low Specifications

CS

Logic Threshold, Low V

CS

Input Current, Low I

IL

CSL

CS High Specifications

CS

Logic Threshold, High V

CS

Input Current, High I

GND Current I

Amplifier Output Leakage I

IH

CSH

SS

O(LEAK)

CS Dynamic Specifications

CS

Low to Amplifier Output Turn-on Time t

CS

High to Amplifier Output High-Z Time t

Hysteresis V

ON

OFF

HYST

= +25°C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/2,

A

V

-1.0 0.01 — μACS = V

0.8 V

—0.012.0 μACS = V

-2 -0.05 — μACS = V

—0.01— μACS = V

—0.2VDDV

SS

—VDDV

DD

SS

DD

—210μs G = +1, VIN = VSS,

= 0.2VDD to V

CS

OUT

—0.01— μs G = +1, VIN = VSS,

CS

= 0.8VDD to V

OUT

—0.6— VVDD = 5.0V, Internal Switch

= 0.45VDD time

= 0.05VDD time

MCP6021/1R/2/3/4

TEMPERATURE CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, VDD = +2.5V to +5.5V and VSS = GND.

Parameters Sym Min Typ Max Units Conditions

Temperature Ranges

Industrial Temperature Range T Extended Temperature Range T Operating Temperature Range T Storage Temperature Range T

Thermal Package Resistances

Thermal Resistance, 5L-SOT-23 θ Thermal Resistance, 8L-PDIP θ Thermal Resistance, 8L-SOIC θ Thermal Resistance, 8L-MSOP θ Thermal Resistance, 8L-TSSOP θ Thermal Resistance, 14L-PDIP θ Thermal Resistance, 14L-SOIC θ Thermal Resistance, 14L-TSSOP θ Note 1: The industrial temperature devices operate over this extended temperature range, but with reduced performance. In any

case, the internal junction temperature (T

A

JA

) must not exceed the absolute maximum specification of 150°C.

J

-40 — +85 °C

-40 — +125 °C

-40 — +125 °C Note 1

-65 — +150 °C

—256— °C/W —85—°C/W —163— °C/W —206— °C/W —124— °C/W —70—°C/W —120— °C/W —100— °C/W

CS

V

OUT

I

SS

I

CS

t

ON

High-Z

-50 nA (typ.)

10 nA (typ.)

Amplifier On

-1 mA (typ.)

10 nA (typ.) 10 nA (typ.)

t

OFF

High-Z

-50 nA (typ.)

FIGURE 1-1: Timing diagram for the CS pin on the MCP6023.

MCP6021/1R/2/3/4

2.0 TYPICAL PERFORMANCE CURVES

Note: The graphs and tables provided following this note are a statistical summary based on a limited number of

samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

Note: Unless otherwise indicated, TA=+25°C, VDD=+2.5Vto+5.5V, VSS= GND, VCM=VDD/2, V

=10kΩ to VDD/2 and CL=60 pF.

R

L

16% 14% 12% 10%

Percentage of Occurances

8% 6% 4% 2% 0%

I-Temp

Parts

-500

-400

-300

-200

-100

Input Offset Voltage (μV)

0

1192 Samples V

CM

T

= +25°C

A

100

200

= 0V

300

FIGURE 2-1: Input Offset Voltage, (Industrial Temperature Parts).

24% 22% 20% 18% 16% 14% 12% 10%

Percentage of Occurances

8% 6% 4% 2% 0%

E-Temp

Parts

-240

-200

0

-80

-160

-40

-120

Input Offset Voltage (μV)

40

80

438 Samples V

= 5.0V

DD

= 0V

V

CM

T

= +25°C

A

120

160

400

200

500

240

24% 22% 20% 18% 16% 14% 12% 10%

8% 6% 4%

Percentage of Occurances

2% 0%

I-Temp

Parts

-20

-16

-8

-12

Input Offset Voltage Drift (μV/°C)

-4

1192 Samples

= 0V

V

CM

T

= -40°C to +85°C

A

0

4

8

FIGURE 2-4: Input Offset Voltage Drift, (Industrial Temperature Parts).

24% 22% 20% 18% 16% 14% 12% 10%

Percentage of Occurances

8% 6% 4% 2% 0%

E-Temp

Parts

-20

-16

-8

-12

Input Offset Voltage Drift (μV/°C)

-4

438 Samples V

= 0V

CM

T

= -40°C to +125°C

A

0

4

8

OUT

12

≈ VDD/2,

16

20

16

20

FIGURE 2-2: Input Offset Voltage, (Extended Temperature Parts).

500

VDD = 2.5V

400 300 200 100

0

-100

-200

-300

Input Offset Voltage (μV)

-400

-500

-0.50.00.51.01.52.02.53.0 Common Mode Input Voltage (V)

-40°C +25°C +85°C +125°C

FIGURE 2-3: Input Offset Voltage vs. Common Mode Input Voltage with V

= 2.5V.

DD

FIGURE 2-5: Input Offset Voltage Drift, (Extended Temperature Parts).

Input Offset Voltage (μV)

500 400 300 200 100

-100

-200

-300

-400

-500

VDD = 5.5V

0

-0.5

0.0

0.5

1.0

1.5

2.0

2.5

Common Mode Input Voltage (V)

3.0

3.5

-40°C +25°C +85°C +125°C

4.0

4.5

5.0

5.5

FIGURE 2-6: Input Offset Voltage vs. Common Mode Input Voltage with VDD = 5.5V.

6.0

MCP6021/1R/2/3/4

Note: Unless otherwise indicated, TA=+25°C, VDD=+2.5Vto+5.5V, VSS= GND, VCM=VDD/2, V

=10kΩ to VDD/2 and CL=60 pF.

R

L

100

50

0

-50

-100

-150

-200 VDD = 5.0V

-250

Input Offset Voltage (μV)

V

= 0V

CM

-300

-50 -25 0 25 50 75 100 125 Ambient Temperature (°C)

FIGURE 2-7: Input Offset Voltage vs. Temperature.

1,000

100

Hz)

(nV/

10

Input Noise Voltage Density

1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 1.E+04 1.E+05 1.E+06

1

0.1 1 10 100 1k 10k 1M100k

Frequency (Hz)

200

VCM = VDD/2

150

Input Offset Voltage (μV)

100

50

0

-50

-100

-150

-200

VDD = 5.5V

VDD = 2.5V

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Output Voltage (V)

FIGURE 2-10: Input Offset Voltage vs. Output Voltage.

24

VDD = 5.0V

22 20 18 16 14

Hz)

12 10

(nV/

8 6 4 2

Input Noise Voltage Density

0

-0.5

f = 1 kHz

f = 10 kHz

0.0

0.5

1.0

1.5

2.0

2.5

3.0

Common Mode Input Voltage (V)

3.5

OUT

4.0

≈ VDD/2,

4.5

5.0

5.5

FIGURE 2-8: Input Noise Voltage Density vs. Frequency.

100

90

80

70

60

50

40

CMRR, PSRR (dB)

30

1.E+02 1.E+03 1.E+04 1.E+05 1.E+06

20

100 1k 10k 100k 1M

PSRR+

PSRR-

CMRR

Frequency (Hz)

FIGURE 2-9: CMRR, PSRR vs. Frequency.

FIGURE 2-11: Input Noise Voltage Density vs. Common Mode Input Voltage.

110

105

100

95

90

85

80

PSRR, CMRR (dB)

75

70

-50 -25 0 25 50 75 100 125

CMRR

PSRR (VCM = 0V)

Ambient Temperature (°C)

FIGURE 2-12: CMRR, PSRR vs. Temperature.

MCP6021/1R/2/3/4

Note: Unless otherwise indicated, TA=+25°C, VDD=+2.5Vto+5.5V, VSS= GND, VCM=VDD/2, V

=10kΩ to VDD/2 and CL=60 pF.

R

L

10,000

Input Bias, Offset Currents (pA)

VDD = 5.5V

1,000

100

10

1

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Common Mode Input Voltage (V)

IB, TA = +125°C

IOS, TA = +125°C

IB, TA = +85°C

IOS, TA = +85°C

FIGURE 2-13: Input Bias, Offset Currents vs. Common Mode Input Voltage.

1.2

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

(mA/amplifier)

0.3

Quiescent Current

0.2

0.1

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Power Supply Voltage (V)

+125°C +85°C +25°C

-40°C

10,000

(pA)

Input Bias, Offset Currents

VCM = V

DD

VDD = 5.5V

1,000

I

100

10

1

25 35 45 55 65 75 85 95 105 115 125

Ambient Temperature (°C)

B

I

OS

FIGURE 2-16: Input Bias, Offset Currents vs. Temperature.

1.2

1.1 VDD = 5.5V

1.0

0.9

0.8

0.7

0.6

0.5

0.4

(mA/amplifier)

0.3

Quiescent Current

0.2

VCM = VDD - 0.5V

0.1

0.0

-50 -25 0 25 50 75 100 125

VDD = 2.5V

Ambient Temperature (°C)

OUT

≈ VDD/2,

FIGURE 2-14: Quiescent Current vs. Supply Voltage.

35

30

25

20

(mA)

15

10

5

Output Short Circuit Current

0

0.00.51.01.52.02.53.03.54.04.55.05.5

+125°C

+85°C +25°C

-40°C

Supply Voltage (V)

FIGURE 2-15: Output Short-Circuit Current vs. Supply Voltage.

FIGURE 2-17: Quiescent Current vs. Temperature.

120 110 100

90 80 70 60 50 40 30 20 10

Open-Loop Gain (dB)

0

-10

1.E+00 1.E+01 1.E+02 1.E+03 1.E+04 1.E+0 5 1.E+06 1.E+07 1.E+ 08

-20 1 10010 1k 100k10k 1M 100M10M

Frequency (Hz)

Gain

Phase

0

-15

-30

-45

-60

-75

-90

-105

-120

-135

-150

-165

-180

-195

-210

Open-Loop Phase (°)

FIGURE 2-18: Open-Loop Gain, Phase vs. Frequency.

MCP6021/1R/2/3/4

Note: Unless otherwise indicated, TA=+25°C, VDD=+2.5Vto+5.5V, VSS= GND, VCM=VDD/2, V

=10kΩ to VDD/2 and CL=60 pF.

R

L

130

VDD = 5.5V

120

110

100

90

DC Open-Loop Gain (dB)

1.E+02 1.E+03 1.E+04 1.E+05

80

100 1k 10k 100k

Load Resistance (Ω)

VDD = 2.5V

FIGURE 2-19: DC Open-Loop Gain vs. Load Resistance.

120

VCM = VDD/2

110

100

90

80

DC Open-Loop Gain (dB)

70

0.00 0.05 0.10 0.15 0.20 0.25 0.30

VDD = 5.5V

VDD = 2.5V

Output Voltage Headroom (V);

- VOH or VOL - V

V

DD

SS

120

115

110

105

100

95

DC Open-Loop Gain (dB)

90

-50 -25 0 25 50 75 100 125

VDD = 2.5V

Ambient Temperature (°C)

VDD = 5.5V

FIGURE 2-22: DC Open-Loop Gain vs. Temperature.

14

Gain Bandwidth Product

12

10

8

(MHz)

6

4

2

Gain Bandwidth Product

VDD = 5.0V

0

0.00.51.01.52.02.53.03.54.04.55.0

Phase Margin, G = +1

Common Mode Input Voltage (V)

OUT

≈ VDD/2,

105

90

75

60

45

30

15

Phase Margin, G = +1 (°)

0

FIGURE 2-20: Small Signal DC Open-Loop Gain vs. Output Voltage Headroom.

10

9 8 7 6 5

GBWP, VDD = 5.5V

(MHz)

4

GBWP, V PM, V

3

PM, V

2

Gain Bandwidth Product

1 0

-50 -25 0 25 50 75 100 125

= 2.5V

DD

= 2.5V

DD

= 5.5V

DD

Ambient Temperature (°C)

100 90 80 70 60 50 40 30 20 10 0

Phase Margin, G = +1 (°)

FIGURE 2-21: Gain Bandwidth Product, Phase Margin vs. Temperature.

FIGURE 2-23: Gain Bandwidth Product, Phase Margin vs. Common Mode Input Voltage.

14

12

Gain Bandwidth Product

10

8

(MHz)

6

4

VDD = 5.0V

2

Gain Bandwidth Product

V

= VDD/2

CM

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

Phase Margin, G = +1

Output Voltage (V)

105

90

75

60

45

30

15

0

Phase Margin, G = +1 (°)

FIGURE 2-24: Gain Bandwidth Product, Phase Margin vs. Output Voltage.

MCP6021/1R/2/3/4

Note: Unless otherwise indicated, TA=+25°C, VDD=+2.5Vto+5.5V, VSS= GND, VCM=VDD/2, V

=10kΩ to VDD/2 and CL=60 pF.

R

L

11

Falling, VDD = 5.5V

10

Rising, V

9 8 7 6 5 4 3

Slew Rate (V/μs)

2 1 0

-50 -25 0 25 50 75 100 125

= 5.5V

DD

Falling, VDD = 2.5V Rising, V

Ambient Temperature (°C)

= 2.5V

DD

FIGURE 2-25: Slew Rate vs. Temperature.

FIGURE 2-28: Maximum Output Voltage

10

VDD = 5.5V

)

P-P

1

Swing (V

Maximum Output Voltage

1.E+04 1.E+05 1. E+06 1.E+07

0.1 10k 100k 1M 10M

VDD = 2.5V

Frequency (Hz)

Swing vs. Frequency.

0.1000%

0.0100%

THD+N (%)

0.0010%

0.0001%

f = 1 kHz BW

= 22 kHz

Meas

V

= 5.0V

G = +100 V/V

G = +10 V/V

G = +1 V/V

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Output Voltage (V

DD

)

P-P

0.1000%

0.0100%

THD+N (%)

0.0010%

0.0001%

G = +100 V/V

G = +10 V/V

G = +1 V/V

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Output Voltage (V

f = 20 kHz BW

Meas

V

= 5.0V

DD

P-P

OUT

= 80 kHz

)

≈ VDD/2,

FIGURE 2-26: Total Harmonic Distortion plus Noise vs. Output Voltage with f = 1 kHz.

6

5

4

3

2

1

0

Input, Output Voltage (V)

-1 0 102030405060708090100

V

OUT

V

IN

Time (10 μs/div)

VDD = 5.0V G = +2 V/V

FIGURE 2-27: The MCP6021/1R/2/3/4 family shows no phase reversal under overdrive.

FIGURE 2-29: Total Harmonic Distortion plus Noise vs. Output Voltage with f = 20 kHz.

135

130

125

120

(dB)

115

110

Channel to Channel Separation

G = +1 V/V

1.E+03 1.E+04 1.E+0 5 1.E+0 6

105

1k 1M100k10k

Frequency (Hz)

FIGURE 2-30: Channel-to-Channel Separation vs. Frequency (MCP6022 and MCP6024 only).

MCP6021/1R/2/3/4

Note: Unless otherwise indicated, TA=+25°C, VDD=+2.5Vto+5.5V, VSS= GND, VCM=VDD/2, V

=10kΩ to VDD/2 and CL=60 pF.

R

L

1,000

(mV)

SS

100

-V

OL

or V

10

OH

-V

DD

V

Output Voltage Headroom;

VOL - V

SS

VDD - V

OH

1

0.01 0.1 1 10 Output Current Magnitude (mA)

FIGURE 2-31: Output Voltage Headroom vs. Output Current.

6.E-02

5.E-02

4.E-02

3.E-02

2.E-02

1.E-02

0.E+00

-1.E-02

-2.E-02

-3.E-02

-4.E-02

Output Voltage (10 mV/div)

-5.E-02

-6.E-02

0.E+00 2.E-07 4.E-07 6.E-07 8.E-07 1.E-06 1.E-06 1.E-06 2.E- 06 2.E-06 2.E-06

Time (200 ns/div)

G = +1 V/V

FIGURE 2-34: Output Voltage Headroom vs. Temperature.

10

VOL - V

VDD - V

SS

OH

Output Voltage Headroom

9 8

(mV)

7

SS

6

-V

OL

5 4

or V

OH

3

-V 2

DD

V

1 0

-50 -25 0 25 50 75 100 125 Ambient Temperature (°C)

6.E-02

5.E-02

4.E-02

3.E-02

2.E-02

1.E-02

0.E+00

-1.E-02

-2.E-02

-3.E-02

-4.E-02

Output Voltage (10 mV/div)

-5.E-02

-6.E-02

0.E+00 2.E-07 4.E-07 6.E-07 8 .E-07 1.E-06 1.E-06 1.E-06 2.E-06 2.E-06 2.E-06

G = -1 V/V

= 1 k

R

Ω

F

Time (200 ns/div)

OUT

≈ VDD/2,

FIGURE 2-32: Small-Signal Non-inverting Pulse Response.

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

Output Voltage (V)

1.0

0.5

0.E+00 5.E-07 1.E-06 2.E-06 2 .E-06 3.E-06 3.E-06 4.E-06 4.E-06 5.E-06 5.E-06

0.0 Time (500 ns/div)

G = +1 V/V

FIGURE 2-33: Large-Signal Non-inverting Pulse Response.

FIGURE 2-35: Small-Signal Inverting Pulse Response.

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

Output Voltage (V)

1.0

0.5

0.E+00 5.E-07 1.E-06 2.E-06 2.E -06 3.E-06 3.E-06 4.E-06 4.E-06 5.E -06 5.E-06

0.0

G = -1 V/V

= 1 kΩ

R

F

Time (500 ns/div)

FIGURE 2-36: Large-Signal Inverting Pulse Response.

MCP6021/1R/2/3/4

Note: Unless otherwise indicated, TA=+25°C, VDD=+2.5Vto+5.5V, VSS= GND, VCM=VDD/2, V

=10kΩ to VDD/2 and CL=60 pF.

R

L

50

/2

40

DD

30

– V

20

REF

10

0

(mV)

-10

-20

Accuracy; V

-30

REF

-40

V

-50

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5

FIGURE 2-37: V

Power Supply Voltage (V)

Accuracy vs. Supply

REF

Voltage (MCP6021 and MCP6023 only).

1.6 Op Amp

1.4 turns on here

1.2

1.0

CS swept

0.8

high to low

0.6

(mA/amplifier)

VDD = 2.5V

0.4

Quiescent Current

G = +1 V/V

0.2

V

= 1.25V

IN

0.0

0.0 0.5 1.0 1.5 2.0 2.5 Chip Select Voltage (V)

Op Amp shuts off here

Hysteresis

CS swept low to high

FIGURE 2-40: V Temperature (MCP6021 and MCP6023 only).

50

/2

DD

– V

REF

Accuracy; V

REF

V

Quiescent Current

Representative Part

40 30 20 10

0

(mV)

-10

-20

-30

-40

-50

-50 -25 0 25 50 75 100 125 Ambient Temperature (°C)

REF

1.6 Op Amp

1.4 turns on here

1.2

1.0

0.8

0.6

(mA/amplifier)

0.4

0.2

0.0

CS swept high to low

VDD = 5.5V G = +1 V/V V

= 2.75V

IN

0.00.51.01.52.02.53.03.54.04.55.05.5 Chip Select Voltage (V)

VDD = 5.5V

VDD = 2.5V

Accuracy vs.

Op Amp shuts off here

Hysteresis

CS swept low to high

OUT

≈ VDD/2,

FIGURE 2-38: Chip Select (CS (MCP6023 only) with V

5.5

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5 Output

Output Voltage (V)

1.0

Chip Select Voltage,

on

0.5

0.0

0.0E+00 5.0E-06 1.0E-05 1.5E-05 2.0E-05 2.5E-05 3. 0E-05 3.5E-0 5

-0.5

= 2.5V.

DD

CS Voltage

V

OUT

Output High-Z

Time (5 μs/div)

FIGURE 2-39: Chip Select (CS

) Hysteresis

VDD = 5.0V G = +1 V/V V

= V

IN

SS

Output

on

) to Amplifier Output Response Time (MCP6023 only).

FIGURE 2-41: Chip Select (CS (MCP6023 only) with V

= 5.5V.

DD

) Hysteresis