How it Works
MICROCHIP
Loading...
MCP6021
Technical data
28 pgs633.4 Kb0
Technical data
34 pgs479.85 Kb0
Table of contents
Loading...

MICROCHIP MCP6021, MCP6022, MCP6023, MCP6024 Technical data

M
Rail-to-Rail Input/Output, 10 MHz Op Amps
MCP6021/2/3/4
Features
• Rail-to-Rail Input/Output
• Wide Bandwidth: 10 MHz (typ.)
• Low Noise: 8.7 nV/√Hz, at 10 kHz (typ.)
• Low Offset Voltage:
- Extended Temperature: ±250 µV (max.)
• Mid-Supply V
• Low Supply Current: 1 mA (typ.)
• Total Harmonic Distortion: 0.00053% (typ., G = 1)
• Unity Gain Stable
• Power Supply Range: 2.5V to 5.5V
• Temperature Range:
- Industrial: -40°C to +85°C
- Extended: -40°C to +125°C
: MCP6021 and MCP6023
REF
Typical Applications
• Automotive
• Driving A/D Converters
• Multi-Pole Active Filters
• Barcode Scanners
• Audio Processing
• Communications
• DAC Buffer
• Test Equipment
• Medical Instrumentation
Description
The MCP6021, MCP6022, MCP6023 and MCP6024 from Microchip Technology Inc. are rail-to-rail input and output op amps with high performance. Key specifications include: wide bandwidth (10 MHz), low
noise (8.7 nV/√Hz), low input offset voltage and low
distortion (0.00053% THD+N). These features make these op amps well suited for applications requiring high performance and bandwidth. The MCP6023 also offers a chip select pin (CS when the part is not in use.
The single MCP6021, single MCP6023 and dual MCP6022 are available in standard 8-lead PDIP, SOIC and TSSOP. The quad MCP6024 is offered in 14-lead PDIP, SOIC and TSSOP packages.
The MCP6021/2/3/4 family is available in the Industrial and Extended temperature ranges. It has a power supply range of 2.5V to 5.5V.
) that gives power savings
Available Tools
• SPICE Macro Model (at www.microchip.com)
• FilterLab
®
software (at www.microchip.com)
PACKAGE TYPES
MCP6021
PDIP SOIC, TSSOP
V
NC
1
–
V
2
IN
+
V
3
IN
V
4
SS
2003 Microchip Technology Inc. DS21685B-page 1
NC
8
V
7
V
6
V
5
DD
OUT
REF
OUTA
V
V
MCP6022
PDIP SOIC, TSSOP
1
–
2
INA
+
3
INA
V
4
SS
V
8
DD
V
7
OUTB
V
–
6
INB
+
V
5
INB
MCP6023
PDIP SOIC, TSSOP
NC
1
V
–
2
IN
+
V
3
IN
V
4
SS
DD
OUT
REF
V
V
V
V
V
V
OUTA
INA
INA
V
INB
INB
OUTB
CS
8
V
7
V
6
V
5
MCP6024
PDIP SOIC, TSSOP
DD
1
–
2
+
3
4
+
5
–
6
7
14
13
12
11
10
V
OUTD
V
–
IND
+
V
IND
V
SS
V
+
INC
–
V
9
INC
V
8
OUTC
MCP6021/2/3/4

1.0 ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings †
VDD - VSS.........................................................................7.0V
All Inputs and Outputs ..................... V
Difference Input Voltage ....................................... |V
Output Short Circuit Current ..................................continuous
Current at Input Pins ....................................................±2 mA
Current at Output and Supply Pins ............................±30 mA
Storage Temperature ....................................-65°C to +150°C
Junction Temperature.................................................. +150°C
ESD Protection on all pins (HBM/MM)................ ≥ 2 kV / 200V
† Notice: Stresses above those listed under “Maximum
- 0.3V to VDD+0.3V
SS
DD-VSS
|
Pin Function Table
Name Function
VIN+, V
V
IN
V
DD
V
SS
CS
V
REF
V
OUT
V
OUTD
NC No Internal Connection
–, V
, V
INA
INA
OUTA
+, V
–, V
, V
INB
INB
OUTB
+, V
–, V
, V
Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Expo­sure to maximum rating conditions for extended periods may affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, T
V
= VDD/2, V
CM
Parameters Sym Min Typ Max Units Conditions
Input Offset
Input Offset Voltage:
Industrial Temperature Parts V
Extended Temperature Parts V
Extended Temperature Parts V
Input Offset Voltage Temperature Drift ∆V
Power Supply Rejection Ratio PSRR 74 90 — dB V
Input Current and Impedance
Input Bias Current I
Industrial Temperature Parts I
Extended Temperature Parts I
Input Offset Current I
Common-Mode Input Impedance Z
Differential Input Impedance Z
Common-Mode
Common-Mode Input Range V
Common-Mode Rejection Ratio CMRR 74 90 — dB V
Voltage Reference (MCP6021 and MCP6023 only)
Accuracy (V
V
REF
Temperature Drift ∆V
V
REF
Open Loop Gain
DC Open Loop Gain (Large Signal) A
OUT
REF
≈ V
/2 and R
DD
- V
/2) ∆V
DD
=10kΩ to V
L
-500 — +500 µV VCM = 0V
-250 — +250 µV VCM = 0V, VDD = 5.0V
-2.5 — +2.5 mV VCM = 0V, VDD = 5.0V
A
VSS-0.3 — VDD+0.3 V
OS
OS
DIFF
CMR
OS
OS
OS
/∆T
B
B
B
CM
CMRR 70 85 — dB V
CMRR 74 90 — dB V
REF
/∆T
REF
A
OL
= +25°C, VDD = +2.5V to +5.5V, VSS = GND,
A
/2.
DD
—±3.5—µV/°CT
—1—pA
— 30 150 pA TA = +85°C
— 640 5,000 pA TA = +125°C
—±1—pA
—10
—10
13
||6 — Ω||pF
13
||3 — Ω||pF
-50 — +50 mV
—±100—µV/°CT
90 110 — dB VCM = 0V,
+, V
INC
INC
+ Non-inverting Inputs
IND
–, V
– Inverting Inputs
IND
Positive Power Supply
Negative Power Supply
Chip Select
Reference Voltage
,
OUTC
T
= -40°C to +125°C
A
= -40°C to +125°C
A
CM
DD
DD
DD
= -40°C to +125°C
A
V
OUT
Outputs
= 0V
= 5V, VCM = -0.3V to 5.3V
= 5V, VCM = 3.0V to 5.3V
= 5V, VCM = -0.3V to 3.0V
= VSS+0.3V to VDD-0.3V
DS21685B-page 2 2003 Microchip Technology Inc.
MCP6021/2/3/4
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise indicated, T
V
= VDD/2, V
CM
OUT
≈ V
/2 and R
DD
=10kΩ to V
L
DD
Parameters Sym Min Typ Max Units Conditions
Output
Maximum Output Voltage Swing V
Output Short Circuit Current I
OL
, V
SC
OHVSS
Power Supply
Supply Voltage V
Quiescent Current per Amplifier I
S
Q
2.5 — 5.5 V
0.5 1.0 1.35 mA IO = 0
AC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, T
R
=10kΩ to V
L
/2 and CL = 60 pF.
DD
Parameters Sym Min Typ Max Units Conditions
AC Response
Gain Bandwidth Product GBWP — 10 — MHz
Phase Margin at Unity-Gain PM — 65 — ° G = 1
Settling Time, 0.2% t
SETTLE
Slew Rate SR — 7.0 — V/µs
Total Harmonic Distortion Plus Noise
f = 1 kHz, G = 1 THD+N — 0.00053 — % V
f = 1 kHz, G = 1, R
= 600Ω@1 KHz THD+N — 0.00064 — % V
L
f = 1 kHz, G = +1 V/V THD+N — 0.0014 — % V
f = 1 kHz, G = +10 V/V THD+N — 0.0009 — % V
f = 1 kHz, G = +100 V/V THD+N — 0.005 — % V
Noise
Input Voltage Noise E
Input Voltage Noise Density e
Input Current Noise Density i
ni
ni
ni
A
— 250 — ns G = 1, V
— 2.9 — µVp-p f = 0.1 Hz to 10 Hz —8.7 —nV/√Hz f = 10 kHz —3 —fA/√Hz f = 1 kHz
= +25°C, VDD = +2.5V to +5.5V, VSS = GND,
A
/2.
+15 — VDD-20 mV 0.5V output overdrive
—±30—mA
= 25°C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/2, V
OUT
OUT
OUT
OUT
OUT
≈ V
OUT
= 100 mV
OUT
p-p
= 0.25V + 3.25V, BW = 22 kHz
= 0.25V + 3.25V, BW = 22 kHz
= 4V
, VDD = 5.0V, BW = 22 kHz
P-P
= 4V
, VDD = 5.0V, BW = 22 kHz
P-P
= 4V
, VDD = 5.0V, BW = 22 kHz
P-P
DD
/2,
MCP6023 CHIP SELECT (CS) CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, T
R
=10kΩ to V
L
/2 and CL = 60 pF.
DD
= 25°C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/2, V
A
Parameters Sym Min Typ Max Units Conditions
DC Characteristics
Logic Threshold, Low
CS
CS Input Current, Low
CS Logic Threshold, High
CS Input Current, High
CS Input High, GND Current
Amplifier Output Leakage
V
IL
I
CSL
V
IH
I
CSH
I
SS
——0.01—µACS = V
0 — 0.2V
DD
V
-1.0 0.01 — µA CS = V
0.8V
—VDDV
DD
— 0.01 2.0 µA CS = V
— 0.05 2.0 µA CS = V
SS
DD
DD
DD
Timing
Low to Amplifier Output
CS
t
ON
Turn-on Time
CS High to Amplifier Output
t
OFF
High -Z Turn -off Time
Hysteresis
2003 Microchip Technology Inc. DS21685B-page 3
V
HYST
— 2 10 µs G = 1, VIN = VSS,
CS
= 0.2VDD to V
— 0.01 — µs G = 1, VIN = VSS,
CS
= 0.8VDD to V
— 0.6 — V Internal Switch
= 0.45VDD time
OUT
= 0.05VDD time
OUT
OUT
≈ V
DD
/2,
MCP6021/2/3/4
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, VDD = +2.5V to +5.5V and VSS = GND.
Parameters Symbol Min Typ Max Units Conditions
Temperature Ranges
Industrial Temperature Range T
Extended Temperature Range T
Operating Temperature Range T
Storage Temperature Range T
Thermal Package Resistances
Thermal Resistance, 8L-PDIP θ Thermal Resistance, 8L-SOIC θ Thermal Resistance, 8L-TSSOP θ Thermal Resistance, 14L-PDIP θ Thermal Resistance, 14L-SOIC θ Thermal Resistance, 14L-TSSOP θ
A
A
A
A
JA
JA
JA
JA
JA
JA
Note 1: The industrial temperature devices operate over this extended temperature range, but with reduced
performance. In any case, the internal junction temperature (T specification of 150°C.
-40 — +85 °C
-40 — +125 °C
-40 — +125 °C Note 1
-65 — +150 °C
—85—°C/W
—163— °C/W
—124— °C/W
—70—°C/W
—120— °C/W
—100— °C/W
) must not exceed the absolute maximum
J
CS
V
OUT
I
SS
I
CS
t
ON
Hi-Z
50 nA (typ.)
10 nA (typ.)
Amplifier On
1mA (typ.)
10 nA (typ.) 10 nA (typ.)
t
OFF
Hi-Z
50 nA (typ.)

FIGURE 1-1: Timing diagram for the CS pin on the MCP6023.

DS21685B-page 4 2003 Microchip Technology Inc.
MCP6021/2/3/4

2.0 TYPICAL PERFORMANCE CURVES

Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, T V
≈ V
OUT
/2 and CL= 60 pF.
DD
16%
1192 Samples
14%
= +25°C
T
A
12%
10%
8%
6%
4%
2%
Percentage of Occurances
0%
-500
-400
-300
-200
Input Offset Voltage (µV)
-100
=+25°C, VDD= +2.5V to +5.5V, VSS= GND, VCM=VDD/2, R
A
0
100
200
300

FIGURE 2-1: Input Offset Voltage, (Industrial Temperature Parts).

24%
438 Samples
22% 20% 18% 16% 14% 12% 10%
Percentage of Occurances
8% 6% 4% 2% 0%
= 5.0V
V
DD
V
= 0V
CM
T
= +25°C
A
-200
-160
-80
-120 Input Offset Voltage (µV)
-40
0
40
E-Temp
80
120
I-Temp
Parts
400
Parts
160
500
200
=10kΩ to V
12%
1192 Samples
11%
TA = -40°C to +85°C
10%
9% 8% 7% 6% 5% 4% 3% 2% 1%
Percentage of Occurances
0%
-8-6-4
-12
-10 Input Offset Voltage Drift (µV/°C)
L
0
2
4
-2
6
I-Temp
Parts
8
DD
10

FIGURE 2-4: Input Offset Voltage Drift, (Industrial Temperature Parts).

26%
E-Temp
24% 22% 20% 18% 16% 14% 12% 10%
Percentage of Occurances
8% 6% 4% 2% 0%
Parts
-20
-16
-8
-12
Input Offset Voltage Drift (µV/°C)
0
-4
438 Samples
= 0V
V
CM
T
= -40°C to +125°C
A
4
8
12
16
/2,
12
20

FIGURE 2-2: Input Offset Voltage, (Extended Temperature Parts).

500
VDD = 2.5V
400 300 200 100
0
-100
-200
-300
Input Offset Voltage (µV)
-400
-500
-0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0
Common Mode Input Voltage (V)
-40°C +25°C +85°C
+125°C
FIGURE 2-3: Input Offset Voltage vs. Common Mode Input Voltage with V
= 2.5V.
DD

FIGURE 2-5: Input Offset Voltage Drift, (Extended Temperature Parts).

500
VDD = 5.5V -40°C
400 300 200 100
0
-100
-200
-300
-400
Input Offset Voltage (µV)
-500
0.0
0.5
-0.5
1.0
Common Mode Input Voltage (V)
1.5
2.0
2.5
3.0
3.5
+25°C +85°C
+125°C
4.0
4.5
5.0
5.5

FIGURE 2-6: Input Offset Voltage vs. Common Mode Input Voltage with VDD = 5.5V.

6.0
2003 Microchip Technology Inc. DS21685B-page 5
MCP6021/2/3/4
Note: Unless otherwise indicated, T
V
≈ V
OUT
/2 and CL= 60 pF.
DD
100
50
0
-50
-100
-150
-200 VDD = 5.0V
-250
Input Offset Voltage (µV)
-300
= 0V
V
CM
-50 -25 0 25 50 75 100 125 Ambient Temperature (°C)
=+25°C, VDD= +2.5V to +5.5V, VSS= GND, VCM=VDD/2, R
A

FIGURE 2-7: Input Offset Voltage vs. Temperature.

1,000
100
Hz)
(nV/
10
Input Noise Voltage Density
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 1.E+04 1.E+05 1.E+06
1
0.1 1 10 100 1k 10k 1M100k
Frequency (Hz)
=10kΩ to V
L
200
VCM = VDD/2
150
100
50
0
-50
-100
-150
Input Offset Voltage (µV)
-200
VDD = 5.5V
VDD = 2.5V
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Output Voltage (V)

FIGURE 2-10: Input Offset Voltage vs. Output Voltage.

16
f = 1 kHz
14
= 5.0V
V
DD
12
10
Hz)
8
(nV/
6
4
2
Input Noise Voltage Density
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Common Mode Input Voltage (V)
DD
/2,
5.0

FIGURE 2-8: Input Noise Voltage Density vs. Frequency.

100
90
80
70
60
50
40
CMRR, PSRR (dB)
30
1.E+02 1.E+03 1.E+04 1.E+05 1.E+06
20
100 1k 10k 100k 1M
PSRR+
PSRR-
CMRR
Frequency (Hz)

FIGURE 2-9: Common Mode, Power Supply Rejection Ratios vs. Frequency.

FIGURE 2-11: Input Noise Voltage Density vs. Common Mode Input Voltage.

110
105
100
95
90
85
80
PSRR, CMRR (dB)
75
70
-50 -25 0 25 50 75 100 125
CMRR
PSRR (VCM = 0V)
Ambient Temperature (°C)

FIGURE 2-12: Common Mode, Power Supply Rejection Ratios vs. Temperature.

DS21685B-page 6 2003 Microchip Technology Inc.
MCP6021/2/3/4
Note: Unless otherwise indicated, T
V
≈ V
OUT
/2 and CL= 60 pF.
DD
10,000
Input Bias, Offset Currents (pA)
VDD = 5.5V
1,000
100
10
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Common Mode Input Voltage (V)
=+25°C, VDD= +2.5V to +5.5V, VSS= GND, VCM=VDD/2, R
A
IB, TA = +125°C
IOS, TA = +125°C
IB, TA = +85°C
IOS, TA = +85°C

FIGURE 2-13: Input Bias, Offset Currents vs. Common Mode Input Voltage.

1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
(mA/amplifier)
0.3
Quiescent Current
0.2
0.1
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Power Supply Voltage (V)
+125°C +85°C +25°C
-40°C
=10kΩ to V
10,000
VCM = V
DD
VDD = 5.5V
1,000
100
10
Input Bias, Offset Currents (pA)
1
25 35 45 55 65 75 85 95 105 115 125
Ambient Temperature (°C)
L
I
B
DD
I
OS

FIGURE 2-16: Input Bias, Offset Currents vs. Temperature.

1.2
1.1 VDD = 5.5V
1.0
0.9
0.8
0.7
0.6
0.5
0.4
(mA/amplifier)
0.3
Quiescent Current
0.2
VCM = VDD - 0.5V
0.1
0.0
-50 -25 0 25 50 75 100 125
VDD = 2.5V
Ambient Temperature (°C)
/2,

FIGURE 2-14: Quiescent Current vs. Supply Voltage.

35
30
25
20
(mA)
15
10
5
Output Short Circuit Current
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
+125°C
+85°C +25°C
-40°C
Supply Voltage (V)

FIGURE 2-15: Output Short-Circuit Current vs. Supply Voltage.

FIGURE 2-17: Quiescent Current vs. Temperature.

120 110 100
90 80 70 60 50 40 30 20 10
Open-Loop Gain (dB)
0
-10
1.E+00 1.E+01 1.E+02 1.E+03 1.E+04 1.E+05 1.E+06 1.E+07 1.E+08
-20 1 10010 1k 100k10k 1M 100M10M
Frequency (Hz)
Gain
Phase
0
-15
-30
-45
-60
-75
-90
-105
-120
-135
-150
-165 Open-Loop Phase (°)
-180
-195
-210

FIGURE 2-18: Open-Loop Gain, Phase vs. Frequency.

2003 Microchip Technology Inc. DS21685B-page 7
MCP6021/2/3/4
Note: Unless otherwise indicated, T
V
≈ V
OUT
/2 and CL= 60 pF.
DD
130
120
110
100
90
DC Open-Loop Gain (dB)
1.E+02 1.E+03 1.E+04 1.E+05
80
100 1k 10k 100k
Load Resistance (:)
=+25°C, VDD= +2.5V to +5.5V, VSS= GND, VCM=VDD/2, R
A
VDD = 5.5V
VDD = 2.5V

FIGURE 2-19: DC Open-Loop Gain vs. Load Resistance.

120
VCM = VDD/2
110
100
90
80
DC Open-Loop Gain (dB)
70
0.00 0.05 0.10 0.15 0.20 0.25 0.30
Output Voltage Headroom (V);
VDD = 5.5V
- VOH or VOL - V
V
DD
VDD = 2.5V
SS
=10kΩ to V
L
120
115
110
105
100
95
DC Open-Loop Gain (dB)
90
-50 -25 0 25 50 75 100 125
VDD = 2.5V
Ambient Temperature (°C)
VDD = 5.5V

FIGURE 2-22: DC Open-Loop Gain vs. Temperature.

14
Gain Bandwidth Product
12
10
8
(MHz)
6
4
2
Gain Bandwidth Product
VDD = 5.0V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Phase Margin, G = +1
Common Mode Input Voltage (V)
105
90
75
60
45
30
15
0
/2,
DD
Phase Margin, G = +1 (°)

FIGURE 2-20: Small Signal DC Open-Loop Gain vs. Output Voltage Headroom.

10
9 8 7 6 5
GBWP, VDD = 5.5V
(MHz)
4
GBWP, V PM, V
3
PM, V
2
Gain Bandwidth Product
1 0
-50 -25 0 25 50 75 100 125
= 2.5V
DD
= 2.5V
DD
= 5.5V
DD
Ambient Temperature (°C)
100 90 80 70 60 50 40 30 20
Phase Margin, G = +1 (°)
10 0

FIGURE 2-21: Gain Bandwidth Product, Phase Margin vs. Temperature.

FIGURE 2-23: Gain Bandwidth Product, Phase Margin vs. Common Mode Input Voltage.

14
Gain Bandwidth Product
12
10
8
(MHz)
6
4
VDD = 5.0V
2
Gain Bandwidth Product
= VDD/2
V
CM
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Phase Margin, G = +1
Output Voltage (V)
105
90
75
60
45
30
15
Phase Margin, G = +1 (°)
0

FIGURE 2-24: Gain Bandwidth Product, Phase Margin vs. Output Voltage.

DS21685B-page 8 2003 Microchip Technology Inc.
MCP6021/2/3/4
Note: Unless otherwise indicated, T
V
≈ V
OUT
/2 and CL= 60 pF.
DD
11
Falling, VDD = 5.5V
10
Rising, V
9 8 7 6 5 4 3
Slew Rate (V/µs)
2 1 0
-50 -25 0 25 50 75 100 125
= 5.5V
DD
Falling, VDD = 2.5V Rising, V
Ambient Temperature (°C)
=+25°C, VDD= +2.5V to +5.5V, VSS= GND, VCM=VDD/2, R
A
= 2.5V
DD

FIGURE 2-25: Slew Rate vs. Temperature.

0.1000%
0.0100%
THD+N (%)
0.0010%
0.0001%
G = +100 V/V
G = +10 V/V
G = +1 V/V
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Output Voltage (V
f = 1 kHz BW
Meas
= 5.0V
V
DD
= 22 kHz
)
P-P
=10kΩ to V
L
10
VDD = 5.5V
)
P-P
1
Swing (V
Maximum Output Voltage
1.E+04 1.E+05 1.E+06 1.E+07
0.1 10k 100k 1M 10M
VDD = 2.5V
Frequency (Hz)
DD

FIGURE 2-28: Maximum Output Voltage Swing vs. Frequency.

0.1000%
0.0100%
THD+N (%)
0.0010%
0.0001%
G = +100 V/V
G = +10 V/V
G = +1 V/V
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Output Voltage (V
f = 20 kHz
= 80 kHz
BW
Meas
= 5.0V
V
DD
)
P-P
/2,

FIGURE 2-26: Total Harmonic Distortion plus Noise vs. Output Voltage with f = 1 kHz.

6
5
4
3
2
1
0
Input, Output Voltage (V)
0.0E+00 1.0E-05 2.0E-05 3.0E-05 4.0E-05 5.0E-05 6.0E-05 7.0E-05 8.0E-05 9.0E-05 1.0E-04
-1
V
V
OUT
Time (10 µs/div)
IN
VDD = 5V G = +1 V/V

FIGURE 2-27: The MCP6021/2/3/4 family shows no phase reversal under overdrive.

FIGURE 2-29: Total Harmonic Distortion plus Noise vs. Output Voltage with f = 20 kHz.

135
130
125
120
(dB)
115
110
Channel to Channel Separation
G = +1 V/V
1.E+03 1.E+04 1.E+05 1.E+06
105
1k 1M
10k
Frequency (Hz)
100k

FIGURE 2-30: Channel-to-Channel Separation vs. Frequency (MCP6022 and MCP6024 only).

2003 Microchip Technology Inc. DS21685B-page 9
Loading...
+ 19 hidden pages
Buy Points How it Works FAQ Contact Us Questions and Suggestions Privacy Policy Cookie Policy Terms of Use