MICROCHIP MCP6021, MCP6022, MCP6023, MCP6024 Technical data

M

Rail-to-Rail Input/Output, 10 MHz Op Amps

MCP6021/2/3/4

Features

• Rail-to-Rail Input/Output

• Wide Bandwidth: 10 MHz (typ.)

• Low Noise: 8.7 nV/√Hz, at 10 kHz (typ.)

• Low Offset Voltage:

- Industrial Temperature: ±500 µV (max.)

- Extended Temperature: ±250 µV (max.)

• Mid-Supply V

• Low Supply Current: 1 mA (typ.)

• Total Harmonic Distortion: 0.00053% (typ., G = 1)

• Unity Gain Stable

• Power Supply Range: 2.5V to 5.5V

• Temperature Range:

- Industrial: -40°C to +85°C

- Extended: -40°C to +125°C

: MCP6021 and MCP6023

REF

Typical Applications

• Automotive

• Driving A/D Converters

• Multi-Pole Active Filters

• Barcode Scanners

• Audio Processing

• Communications

• DAC Buffer

• Test Equipment

• Medical Instrumentation

Description

The MCP6021, MCP6022, MCP6023 and MCP6024 from Microchip Technology Inc. are rail-to-rail input and output op amps with high performance. Key specifications include: wide bandwidth (10 MHz), low

noise (8.7 nV/√Hz), low input offset voltage and low

distortion (0.00053% THD+N). These features make these op amps well suited for applications requiring high performance and bandwidth. The MCP6023 also offers a chip select pin (CS when the part is not in use.

The single MCP6021, single MCP6023 and dual MCP6022 are available in standard 8-lead PDIP, SOIC and TSSOP. The quad MCP6024 is offered in 14-lead PDIP, SOIC and TSSOP packages.

The MCP6021/2/3/4 family is available in the Industrial and Extended temperature ranges. It has a power supply range of 2.5V to 5.5V.

) that gives power savings

Available Tools

• SPICE Macro Model (at www.microchip.com)

• FilterLab

®

software (at www.microchip.com)

PACKAGE TYPES

MCP6021

PDIP SOIC, TSSOP

V

NC

1

–

V

2

IN

+

V

3

IN

V

4

SS

 2003 Microchip Technology Inc. DS21685B-page 1

NC

8

V

7

V

6

V

5

DD

OUT

REF

OUTA

V

MCP6022

PDIP SOIC, TSSOP

1

–

2

INA

+

3

INA

V

4

SS

V

8

DD

V

7

OUTB

V

–

6

INB

+

V

5

INB

MCP6023

PDIP SOIC, TSSOP

NC

1

V

–

2

IN

+

V

3

IN

V

4

SS

DD

OUT

REF

V

OUTA

INA

V

INB

OUTB

CS

8

V

7

V

6

V

5

MCP6024

PDIP SOIC, TSSOP

DD

1

–

2

+

3

4

+

5

–

6

7

14

13

12

11

10

V

OUTD

V

–

IND

+

V

IND

V

SS

V

+

INC

–

V

9

INC

V

8

OUTC

MCP6021/2/3/4

1.0 ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings †

VDD - VSS.........................................................................7.0V

All Inputs and Outputs ..................... V

Difference Input Voltage ....................................... |V

Output Short Circuit Current ..................................continuous

Current at Input Pins ....................................................±2 mA

Current at Output and Supply Pins ............................±30 mA

Storage Temperature ....................................-65°C to +150°C

Junction Temperature.................................................. +150°C

ESD Protection on all pins (HBM/MM)................ ≥ 2 kV / 200V

† Notice: Stresses above those listed under “Maximum

- 0.3V to VDD+0.3V

SS

DD-VSS

|

Pin Function Table

Name Function

VIN+, V

V

IN

V

DD

V

SS

CS

V

REF

V

OUT

V

OUTD

NC No Internal Connection

–, V

, V

INA

OUTA

+, V

–, V

, V

INB

OUTB

+, V

–, V

, V

Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.

DC CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, T

V

= VDD/2, V

CM

Parameters Sym Min Typ Max Units Conditions

Input Offset

Input Offset Voltage:

Industrial Temperature Parts V

Extended Temperature Parts V

Input Offset Voltage Temperature Drift ∆V

Power Supply Rejection Ratio PSRR 74 90 — dB V

Input Current and Impedance

Input Bias Current I

Industrial Temperature Parts I

Extended Temperature Parts I

Input Offset Current I

Common-Mode Input Impedance Z

Differential Input Impedance Z

Common-Mode

Common-Mode Input Range V

Common-Mode Rejection Ratio CMRR 74 90 — dB V

Voltage Reference (MCP6021 and MCP6023 only)

Accuracy (V

V

REF

Temperature Drift ∆V

V

REF

Open Loop Gain

DC Open Loop Gain (Large Signal) A

OUT

REF

≈ V

/2 and R

DD

- V

/2) ∆V

DD

=10kΩ to V

L

-500 — +500 µV VCM = 0V

-250 — +250 µV VCM = 0V, VDD = 5.0V

-2.5 — +2.5 mV VCM = 0V, VDD = 5.0V

A

VSS-0.3 — VDD+0.3 V

OS

DIFF

CMR

OS

/∆T

B

CM

CMRR 70 85 — dB V

CMRR 74 90 — dB V

REF

/∆T

REF

A

OL

= +25°C, VDD = +2.5V to +5.5V, VSS = GND,

A

/2.

DD

—±3.5—µV/°CT

—1—pA

— 30 150 pA TA = +85°C

— 640 5,000 pA TA = +125°C

—±1—pA

—10

13

||6 — Ω||pF

13

||3 — Ω||pF

-50 — +50 mV

—±100—µV/°CT

90 110 — dB VCM = 0V,

+, V

INC

+ Non-inverting Inputs

IND

–, V

– Inverting Inputs

IND

Positive Power Supply

Negative Power Supply

Chip Select

Reference Voltage

,

OUTC

T

= -40°C to +125°C

A

= -40°C to +125°C

A

CM

DD

= -40°C to +125°C

A

V

OUT

Outputs

= 0V

= 5V, VCM = -0.3V to 5.3V

= 5V, VCM = 3.0V to 5.3V

= 5V, VCM = -0.3V to 3.0V

= VSS+0.3V to VDD-0.3V

DS21685B-page 2  2003 Microchip Technology Inc.

MCP6021/2/3/4

DC CHARACTERISTICS (CONTINUED)

Electrical Specifications: Unless otherwise indicated, T

V

= VDD/2, V

CM

OUT

≈ V

/2 and R

DD

=10kΩ to V

L

DD

Parameters Sym Min Typ Max Units Conditions

Output

Maximum Output Voltage Swing V

Output Short Circuit Current I

OL

, V

SC

OHVSS

Power Supply

Supply Voltage V

Quiescent Current per Amplifier I

S

Q

2.5 — 5.5 V

0.5 1.0 1.35 mA IO = 0

AC CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, T

R

=10kΩ to V

L

/2 and CL = 60 pF.

DD

Parameters Sym Min Typ Max Units Conditions

AC Response

Gain Bandwidth Product GBWP — 10 — MHz

Phase Margin at Unity-Gain PM — 65 — ° G = 1

Settling Time, 0.2% t

SETTLE

Slew Rate SR — 7.0 — V/µs

Total Harmonic Distortion Plus Noise

f = 1 kHz, G = 1 THD+N — 0.00053 — % V

f = 1 kHz, G = 1, R

= 600Ω@1 KHz THD+N — 0.00064 — % V

L

f = 1 kHz, G = +1 V/V THD+N — 0.0014 — % V

f = 1 kHz, G = +10 V/V THD+N — 0.0009 — % V

f = 1 kHz, G = +100 V/V THD+N — 0.005 — % V

Noise

Input Voltage Noise E

Input Voltage Noise Density e

Input Current Noise Density i

ni

A

— 250 — ns G = 1, V

— 2.9 — µVp-p f = 0.1 Hz to 10 Hz —8.7 —nV/√Hz f = 10 kHz —3 —fA/√Hz f = 1 kHz

= +25°C, VDD = +2.5V to +5.5V, VSS = GND,

A

/2.

+15 — VDD-20 mV 0.5V output overdrive

—±30—mA

= 25°C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/2, V

OUT

≈ V

OUT

= 100 mV

OUT

p-p

= 0.25V + 3.25V, BW = 22 kHz

= 4V

, VDD = 5.0V, BW = 22 kHz

P-P

= 4V

, VDD = 5.0V, BW = 22 kHz

P-P

= 4V

, VDD = 5.0V, BW = 22 kHz

P-P

DD

/2,

MCP6023 CHIP SELECT (CS) CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, T

R

=10kΩ to V

L

/2 and CL = 60 pF.

DD

= 25°C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/2, V

A

Parameters Sym Min Typ Max Units Conditions

DC Characteristics

Logic Threshold, Low

CS

CS Input Current, Low

CS Logic Threshold, High

CS Input Current, High

CS Input High, GND Current

Amplifier Output Leakage

V

IL

I

CSL

V

IH

I

CSH

I

SS

——0.01—µACS = V

0 — 0.2V

DD

V

-1.0 0.01 — µA CS = V

0.8V

—VDDV

DD

— 0.01 2.0 µA CS = V

— 0.05 2.0 µA CS = V

SS

DD

Timing

Low to Amplifier Output

CS

t

ON

Turn-on Time

CS High to Amplifier Output

t

OFF

High -Z Turn -off Time

Hysteresis

 2003 Microchip Technology Inc. DS21685B-page 3

V

HYST

— 2 10 µs G = 1, VIN = VSS,

CS

= 0.2VDD to V

— 0.01 — µs G = 1, VIN = VSS,

CS

= 0.8VDD to V

— 0.6 — V Internal Switch

= 0.45VDD time

OUT

= 0.05VDD time

OUT

≈ V

DD

/2,

MCP6021/2/3/4

TEMPERATURE CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, VDD = +2.5V to +5.5V and VSS = GND.

Parameters Symbol Min Typ Max Units Conditions

Temperature Ranges

Industrial Temperature Range T

Extended Temperature Range T

Operating Temperature Range T

Storage Temperature Range T

Thermal Package Resistances

Thermal Resistance, 8L-PDIP θ Thermal Resistance, 8L-SOIC θ Thermal Resistance, 8L-TSSOP θ Thermal Resistance, 14L-PDIP θ Thermal Resistance, 14L-SOIC θ Thermal Resistance, 14L-TSSOP θ

A

JA

Note 1: The industrial temperature devices operate over this extended temperature range, but with reduced

performance. In any case, the internal junction temperature (T specification of 150°C.

-40 — +85 °C

-40 — +125 °C

-40 — +125 °C Note 1

-65 — +150 °C

—85—°C/W

—163— °C/W

—124— °C/W

—70—°C/W

—120— °C/W

—100— °C/W

) must not exceed the absolute maximum

J

CS

V

OUT

I

SS

I

CS

t

ON

Hi-Z

50 nA (typ.)

10 nA (typ.)

Amplifier On

1mA (typ.)

10 nA (typ.) 10 nA (typ.)

t

OFF

Hi-Z

50 nA (typ.)

FIGURE 1-1: Timing diagram for the CS pin on the MCP6023.

DS21685B-page 4  2003 Microchip Technology Inc.

MCP6021/2/3/4

2.0 TYPICAL PERFORMANCE CURVES

Note: The graphs and tables provided following this note are a statistical summary based on a limited number of

samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

Note: Unless otherwise indicated, T V

≈ V

OUT

/2 and CL= 60 pF.

DD

16%

1192 Samples

14%

= +25°C

T

A

12%

10%

8%

6%

4%

2%

Percentage of Occurances

0%

-500

-400

-300

-200

Input Offset Voltage (µV)

-100

=+25°C, VDD= +2.5V to +5.5V, VSS= GND, VCM=VDD/2, R

A

0

100

200

300

FIGURE 2-1: Input Offset Voltage, (Industrial Temperature Parts).

24%

438 Samples

22% 20% 18% 16% 14% 12% 10%

Percentage of Occurances

8% 6% 4% 2% 0%

= 5.0V

V

DD

V

= 0V

CM

T

= +25°C

A

-200

-160

-80

-120 Input Offset Voltage (µV)

-40

0

40

E-Temp

80

120

I-Temp

Parts

400

Parts

160

500

200

=10kΩ to V

12%

1192 Samples

11%

TA = -40°C to +85°C

10%

9% 8% 7% 6% 5% 4% 3% 2% 1%

Percentage of Occurances

0%

-8-6-4

-12

-10 Input Offset Voltage Drift (µV/°C)

L

0

2

4

-2

6

I-Temp

Parts

8

DD

10

FIGURE 2-4: Input Offset Voltage Drift, (Industrial Temperature Parts).

26%

E-Temp

24% 22% 20% 18% 16% 14% 12% 10%

Percentage of Occurances

8% 6% 4% 2% 0%

Parts

-20

-16

-8

-12

Input Offset Voltage Drift (µV/°C)

0

-4

438 Samples

= 0V

V

CM

T

= -40°C to +125°C

A

4

8

12

16

/2,

12

20

FIGURE 2-2: Input Offset Voltage, (Extended Temperature Parts).

500

VDD = 2.5V

400 300 200 100

0

-100

-200

-300

Input Offset Voltage (µV)

-400

-500

-0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0

Common Mode Input Voltage (V)

-40°C +25°C +85°C

+125°C

FIGURE 2-3: Input Offset Voltage vs. Common Mode Input Voltage with V

= 2.5V.

DD

FIGURE 2-5: Input Offset Voltage Drift, (Extended Temperature Parts).

500

VDD = 5.5V -40°C

400 300 200 100

0

-100

-200

-300

-400

Input Offset Voltage (µV)

-500

0.0

0.5

-0.5

1.0

Common Mode Input Voltage (V)

1.5

2.0

2.5

3.0

3.5

+25°C +85°C

+125°C

4.0

4.5

5.0

5.5

FIGURE 2-6: Input Offset Voltage vs. Common Mode Input Voltage with VDD = 5.5V.

6.0

 2003 Microchip Technology Inc. DS21685B-page 5

MCP6021/2/3/4

Note: Unless otherwise indicated, T

V

≈ V

OUT

/2 and CL= 60 pF.

DD

100

50

0

-50

-100

-150

-200 VDD = 5.0V

-250

Input Offset Voltage (µV)

-300

= 0V

V

CM

-50 -25 0 25 50 75 100 125 Ambient Temperature (°C)

=+25°C, VDD= +2.5V to +5.5V, VSS= GND, VCM=VDD/2, R

A

FIGURE 2-7: Input Offset Voltage vs. Temperature.

1,000

100

Hz)



(nV/

10

Input Noise Voltage Density

1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 1.E+04 1.E+05 1.E+06

1

0.1 1 10 100 1k 10k 1M100k

Frequency (Hz)

=10kΩ to V

L

200

VCM = VDD/2

150

100

50

0

-50

-100

-150

Input Offset Voltage (µV)

-200

VDD = 5.5V

VDD = 2.5V

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5

Output Voltage (V)

FIGURE 2-10: Input Offset Voltage vs. Output Voltage.

16

f = 1 kHz

14

= 5.0V

V

DD

12

10

Hz)



8

(nV/

6

4

2

Input Noise Voltage Density

0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

Common Mode Input Voltage (V)

DD

/2,

5.0

FIGURE 2-8: Input Noise Voltage Density vs. Frequency.

100

90

80

70

60

50

40

CMRR, PSRR (dB)

30

1.E+02 1.E+03 1.E+04 1.E+05 1.E+06

20

100 1k 10k 100k 1M

PSRR+

PSRR-

CMRR

Frequency (Hz)

FIGURE 2-9: Common Mode, Power Supply Rejection Ratios vs. Frequency.

FIGURE 2-11: Input Noise Voltage Density vs. Common Mode Input Voltage.

110

105

100

95

90

85

80

PSRR, CMRR (dB)

75

70

-50 -25 0 25 50 75 100 125

CMRR

PSRR (VCM = 0V)

Ambient Temperature (°C)

FIGURE 2-12: Common Mode, Power Supply Rejection Ratios vs. Temperature.

DS21685B-page 6  2003 Microchip Technology Inc.

MCP6021/2/3/4

Note: Unless otherwise indicated, T

V

≈ V

OUT

/2 and CL= 60 pF.

DD

10,000

Input Bias, Offset Currents (pA)

VDD = 5.5V

1,000

100

10

1

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5

Common Mode Input Voltage (V)

=+25°C, VDD= +2.5V to +5.5V, VSS= GND, VCM=VDD/2, R

A

IB, TA = +125°C

IOS, TA = +125°C

IB, TA = +85°C

IOS, TA = +85°C

FIGURE 2-13: Input Bias, Offset Currents vs. Common Mode Input Voltage.

1.2

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

(mA/amplifier)

0.3

Quiescent Current

0.2

0.1

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5

Power Supply Voltage (V)

+125°C +85°C +25°C

-40°C

=10kΩ to V

10,000

VCM = V

DD

VDD = 5.5V

1,000

100

10

Input Bias, Offset Currents (pA)

1

25 35 45 55 65 75 85 95 105 115 125

Ambient Temperature (°C)

L

I

B

DD

I

OS

FIGURE 2-16: Input Bias, Offset Currents vs. Temperature.

1.2

1.1 VDD = 5.5V

1.0

0.9

0.8

0.7

0.6

0.5

0.4

(mA/amplifier)

0.3

Quiescent Current

0.2

VCM = VDD - 0.5V

0.1

0.0

-50 -25 0 25 50 75 100 125

VDD = 2.5V

Ambient Temperature (°C)

/2,

FIGURE 2-14: Quiescent Current vs. Supply Voltage.

35

30

25

20

(mA)

15

10

5

Output Short Circuit Current

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5

+125°C

+85°C +25°C

-40°C

Supply Voltage (V)

FIGURE 2-15: Output Short-Circuit Current vs. Supply Voltage.

FIGURE 2-17: Quiescent Current vs. Temperature.

120 110 100

90 80 70 60 50 40 30 20 10

Open-Loop Gain (dB)

0

-10

1.E+00 1.E+01 1.E+02 1.E+03 1.E+04 1.E+05 1.E+06 1.E+07 1.E+08

-20 1 10010 1k 100k10k 1M 100M10M

Frequency (Hz)

Gain

Phase

0

-15

-30

-45

-60

-75

-90

-105

-120

-135

-150

-165 Open-Loop Phase (°)

-180

-195

-210

FIGURE 2-18: Open-Loop Gain, Phase vs. Frequency.

 2003 Microchip Technology Inc. DS21685B-page 7

MCP6021/2/3/4

Note: Unless otherwise indicated, T

V

≈ V

OUT

/2 and CL= 60 pF.

DD

130

120

110

100

90

DC Open-Loop Gain (dB)

1.E+02 1.E+03 1.E+04 1.E+05

80

100 1k 10k 100k

Load Resistance (:)

=+25°C, VDD= +2.5V to +5.5V, VSS= GND, VCM=VDD/2, R

A

VDD = 5.5V

VDD = 2.5V

FIGURE 2-19: DC Open-Loop Gain vs. Load Resistance.

120

VCM = VDD/2

110

100

90

80

DC Open-Loop Gain (dB)

70

0.00 0.05 0.10 0.15 0.20 0.25 0.30

Output Voltage Headroom (V);

VDD = 5.5V

- VOH or VOL - V

V

DD

VDD = 2.5V

SS

=10kΩ to V

L

120

115

110

105

100

95

DC Open-Loop Gain (dB)

90

-50 -25 0 25 50 75 100 125

VDD = 2.5V

Ambient Temperature (°C)

VDD = 5.5V

FIGURE 2-22: DC Open-Loop Gain vs. Temperature.

14

Gain Bandwidth Product

12

10

8

(MHz)

6

4

2

Gain Bandwidth Product

VDD = 5.0V

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

Phase Margin, G = +1

Common Mode Input Voltage (V)

105

90

75

60

45

30

15

0

/2,

DD

Phase Margin, G = +1 (°)

FIGURE 2-20: Small Signal DC Open-Loop Gain vs. Output Voltage Headroom.

10

9 8 7 6 5

GBWP, VDD = 5.5V

(MHz)

4

GBWP, V PM, V

3

PM, V

2

Gain Bandwidth Product

1 0

-50 -25 0 25 50 75 100 125

= 2.5V

DD

= 2.5V

DD

= 5.5V

DD

Ambient Temperature (°C)

100 90 80 70 60 50 40 30 20

Phase Margin, G = +1 (°)

10 0

FIGURE 2-21: Gain Bandwidth Product, Phase Margin vs. Temperature.

FIGURE 2-23: Gain Bandwidth Product, Phase Margin vs. Common Mode Input Voltage.

14

Gain Bandwidth Product

12

10

8

(MHz)

6

4

VDD = 5.0V

2

Gain Bandwidth Product

= VDD/2

V

CM

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

Phase Margin, G = +1

Output Voltage (V)

105

90

75

60

45

30

15

Phase Margin, G = +1 (°)

0

FIGURE 2-24: Gain Bandwidth Product, Phase Margin vs. Output Voltage.

DS21685B-page 8  2003 Microchip Technology Inc.

MCP6021/2/3/4

Note: Unless otherwise indicated, T

V

≈ V

OUT

/2 and CL= 60 pF.

DD

11

Falling, VDD = 5.5V

10

Rising, V

9 8 7 6 5 4 3

Slew Rate (V/µs)

2 1 0

-50 -25 0 25 50 75 100 125

= 5.5V

DD

Falling, VDD = 2.5V Rising, V

Ambient Temperature (°C)

=+25°C, VDD= +2.5V to +5.5V, VSS= GND, VCM=VDD/2, R

A

= 2.5V

DD

FIGURE 2-25: Slew Rate vs. Temperature.

0.1000%

0.0100%

THD+N (%)

0.0010%

0.0001%

G = +100 V/V

G = +10 V/V

G = +1 V/V

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Output Voltage (V

f = 1 kHz BW

Meas

= 5.0V

V

DD

= 22 kHz

)

P-P

=10kΩ to V

L

10

VDD = 5.5V

)

P-P

1

Swing (V

Maximum Output Voltage

1.E+04 1.E+05 1.E+06 1.E+07

0.1 10k 100k 1M 10M

VDD = 2.5V

Frequency (Hz)

DD

FIGURE 2-28: Maximum Output Voltage Swing vs. Frequency.

0.1000%

0.0100%

THD+N (%)

0.0010%

0.0001%

G = +100 V/V

G = +10 V/V

G = +1 V/V

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

Output Voltage (V

f = 20 kHz

= 80 kHz

BW

Meas

= 5.0V

V

DD

)

P-P

/2,

FIGURE 2-26: Total Harmonic Distortion plus Noise vs. Output Voltage with f = 1 kHz.

6

5

4

3

2

1

0

Input, Output Voltage (V)

0.0E+00 1.0E-05 2.0E-05 3.0E-05 4.0E-05 5.0E-05 6.0E-05 7.0E-05 8.0E-05 9.0E-05 1.0E-04

-1

V

OUT

Time (10 µs/div)

IN

VDD = 5V G = +1 V/V

FIGURE 2-27: The MCP6021/2/3/4 family shows no phase reversal under overdrive.

FIGURE 2-29: Total Harmonic Distortion plus Noise vs. Output Voltage with f = 20 kHz.

135

130

125

120

(dB)

115

110

Channel to Channel Separation

G = +1 V/V

1.E+03 1.E+04 1.E+05 1.E+06

105

1k 1M

10k

Frequency (Hz)

100k

FIGURE 2-30: Channel-to-Channel Separation vs. Frequency (MCP6022 and MCP6024 only).

 2003 Microchip Technology Inc. DS21685B-page 9