MICROCHIP MCP6001, MCP6002, MCP6004 Technical data

MCP6001/2/4
1 MHz, Low-Power Op Amp
Features
• Available in SC-70-5 and SOT-23-5 packages
• Gain Bandwidth Product: 1 MHz (typ.)
• Rail-to-Rail Input/Output
• Supply Voltage: 1.8V to 5.5V
• Supply Current: I
= 100 µA (typ.)
• Phase Margin: 90° (typ.)
• Temperature Range:
- Industrial: -40°C to +85°C
- Extended: -40°C to +125°C
• Available in Single, Dual and Quad Packages
Applications
• Automotive
• Portable Equipment
• Photodiode Amplifier
• Analog Filters
• Notebooks and PDAs
• Battery-Powered Systems
Available Tools
SPICE Macro Models (at www .m ic rochi p.c om )
®
FilterLab
Software (at www.microchip.com)
Typical Application
V
DD
V
IN
R
2
Non-Inverting Amplifier
V
REF
+
MCP6001
R
1
Gain 1
V
OUT
V
SS
R
1
----- -
+=
R
2
Description
The Microchip T echnology Inc. MCP6001/2/4 family of operational amplifiers (op amps) is specifically designed for general-purpose applications. This family has a 1 MHz Gain Bandwidth Product (GBWP) and 90° phase margin (typ.). It also maintains 45° phase margin (typ.) with a 500 pF capacitive load. This family operates from a single supply voltage as low as 1.8V, while drawing 100 µA (typ.) quiescent current. Additionally, the MCP6001/2/4 supports rail-to-rail input and output swing, with a common mode input voltage range of V
+300mV to VSS– 300 mV. This
DD
family of op amps is designed with Microchip’s advanced CMOS process.
The MCP6001/2/4 family is available in the industrial and extended tempera ture ranges, w ith a power sup ply range of 1.8V to 5.5V.
Package Types
MCP6001
SC-70-5, SOT-23-5
V
V
1
1
OUT
OUT
V
V
VIN+
SS
SS
+
+
2
2 3
3
-
-
MCP6001R
SOT-23-5
V
1
OUT
V
VIN+
DD
+
2 3
-
MCP6001U
SOT-23-5
VIN+
1
V
VIN–
SS
+
2
-
3
V
V
DD
DD
VIN–
V
SS
VIN–
V
DD
V
OUT
V
V V
V
V
5
5
4
4
5
4
5
4
MCP6002
PDIP, SOIC, MSOP
V
OUTA
INA
INA
V
1
2
-
+
3 4
SS
8
DD
7
+
V
OUTB
6
+
-
V
INB
V
+
5
INB
MCP6004
PDIP, SOIC, TSSOP
V
1
OUTA
V
2
V
V V
OUTB
INA INA
V
INB INB
-
+
3 4
DD
+V
5
-
6 7
14
OUTD
V
13
+
-
+
+
+
IND
+
V
12
IND
V
11
SS
+
10
INC
-
V
9
INC
V
8
OUTC
© 2005 Microchip Technology Inc. DS21733F-page 1
MCP6001/2/4

1.0 ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings †
VDD – VSS........................................................................7.0V
All Inputs and Outputs ...................V
Difference Input Voltage ......................................|V
Output Short-Circuit Current .................................continuous
Current at Input Pins ....................................................±2 mA
Current at Output and Supply Pins ............................±30 mA
Storage Temperature........................... .... ..... .-65°C to +150°C
Maximum Junction Temperature (T
ESD Protection On All Pins (HBM;MM)...............≥ 4 kV; 200V
– 0.3V to VDD + 0.3V
SS
– VSS|
DD
)..........................+150°C
J
† Notice: S tresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at tho se or any oth er conditions ab ove those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.
DC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND, VCM = VDD/2,
R
= 10 kΩ to VDD/2 and V
L
Parameters Sym Min Typ Max Units Conditions
Input Offset
Input Offset Voltage V Input Offset Drift with Temperature ΔV
Power Supply Rejection Ratio PSRR 86 dB VCM = V
Input Bias Current and Impedance
Input Bias Current: I
Industrial Tempe ratu r e I
Extended Temperature I Input Offset Current I Common Mode Input Impedance Z Differential Input Impedance Z Common Mode Common Mode Input Range V Common Mode Rejection Ratio CMRR 60 76 dB V
Open-Loop Gain
DC Open-Loop Gain (Large Signal) A
Output
Maximum Output Voltage Swing V Output Short-Circuit Current I
Power Supply
Supply Voltage V Quiescent Current per Amplifier I Note 1: MCP6001/2/4 parts w ith date codes prior to De cemb er 2004 (week code 49) were teste d to ± 7mV minimum/
maximum limits.
OUT
VDD/2.
OS
/ΔT
OS
B B B
OS
CM
DIFF
CMR
OL
, VOHVSS + 25 VDD – 25 mV VDD = 5.5V
OL
SC
DD
-4.5 +4.5 mV VCM = VSS (Note 1) —±2.0—µV/°CT
A
= -40°C to +125°C,
A
= V
V
CM
—±1.0—pA —19—pAT
= +85°C
A
1100 pA TA = +125°C —±1.0—pA —1013||6 Ω||pF —1013||3 Ω||pF
V
0.3 V
SS
88 112 dB V
—±6—mAV —±23—mAV
+ 0.3 V
DD
CM
V
DD
OUT
V
CM=VSS
DD DD
1.8 5.5 V 50 100 170 µA IO = 0, VDD = 5.5V, VCM = 5V
SS SS
= -0.3V to 5.3V, = 5V
= 0.3V to VDD – 0.3V,
= 1.8V = 5.5V
DS21733F-page 2 © 2005 Microchip Technology Inc.
MCP6001/2/4
AC ELECTRICAL SPECIFICATIONS
Electrica l Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +1.8 to 5.5V, VSS = GND, VCM = VDD/2,
VDD/2, RL = 10 kΩ to VDD/2 and CL = 60 pF.
V
OUT
Parameters Sym Min Typ Max Units Conditions
AC Response
Gain Bandwidth Product GBWP 1.0 MHz Phase Margin PM 90 ° G = +1 Slew Rate SR 0.6 V/µs
Noise
Input Noise Voltage E Input Noise Voltage Density e Input Noise Current Density i
ni
ni
ni
TEMPERATURE SPECIFICATIONS
Electrica l Characteristics: Unless otherwise indicated, VDD = +1.8V to +5.5V and VSS = GND.
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Industrial Tempe rature Range T Extended Temperature Range T Operating Temperature Range T Storage Temperature Range T
Thermal Package Resistances
Thermal Resistance, 5L-SC70 Thermal Resistance, 5L-SOT-23 Thermal Resistance, 8L-PDIP θ Thermal Resistance, 8L-SOIC (150 mil) θ Thermal Resistance, 8L-MSOP θ
Thermal Resistance, 14L-PDIP Thermal Resistance, 14L-SOIC Thermal Resistance, 14L-TSSOP
Note: The industrial temperature devices operate over this extended temperature range, but with reduced
performance. In any case, the internal Junction Temperature (T specification of +150°C.
A A A A
θ
JA
θ
JA JA JA JA
θ
JA
θ
JA
θ
JA
6.1 µVp-p f = 0.1Hz to 10 Hz —28—nV/√Hz f = 1 kHz —0.6—fA/√Hz f = 1 kHz
-40 +85 °C
-40 +125 °C
-40 +125 °C Note
-65 +150 °C
— —
331 256
— —
°C/W
°C/W —85—°C/W —163—°C/W —206—°C/W — — —
70 120 100
— — —
) must not exceed the Absolute Maximum
J
°C/W °C/W °C/W
© 2005 Microchip Technology Inc. DS21733F-page 3
MCP6001/2/4
2.0 TYPICAL PERFORMANCE CURVES
Note: The graphs and t a ble s prov id ed fol low i ng thi s n ote are a statistical summary based on a l im ite d n um ber of
samples and are prov ided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND, VCM = VDD/2, V
= 10 kΩ to VDD/2 and CL = 60 pF.
R
L
OUT
VDD/2,
20%
64,695 Samples
18%
V
= V
CM
SS
5
-4
-3
-2
Input Offset Voltage (mV)
0
1
2
-1
3
Percentage of Occurrences
16% 14% 12% 10%
8% 6% 4% 2% 0%

FIGURE 2-1: Input Offset Voltage.

100
90 80 70 60 50 40
PSRR, CMRR ( dB )
30 20
10 100 1k 10k 100k
1.E+01 1.E+02 1.E+03 1.E+04 1.E+05
PSRR+
CMRR
Frequency (Hz)
VCM = V
PSRR–
100
95 90 85 80
PSRR, CMRR (dB)
75
4
5
70
-50 -25 0 25 50 75 100 125
PSRR (VCM = VSS)
CMRR (VCM = -0.3V to +5.3V)
Ambient Temperature (°C)

FIGURE 2-4: CMRR, PSRR vs. Ambient Temperature.

SS
120 100
80 60 40 20
Open-Loop Gain (dB)
0
VCM = V
+00
SS
1.E
+01
-20
0.1 1 10 100 10k 100k 1M 10M
1.E-011.E
1.E
+02
1k
1.E
+03
Gain
1.E
+04
+05
Phase
1.E
1.E
+06
1.E
+07Frequency (Hz)
0
-30
-60
-90
-120
-150
-180
-210
Open-Loop Phase (°)

FIGURE 2-2: PSRR, CMRR vs. Frequency.

14%
1230 Samples
Percentage of Occurrences
12% 10%
8% 6% 4% 2% 0%
= 5.5V
V
DD
= V
V
CM
DD
TA = +85°C
0
3
6
9
12
15
18
Input Bias Current (pA)
21
24
27
30

FIGURE 2-3: Input Bias Current at +85°C.

FIGURE 2-5: Open-Loop Gain, Phase vs.
Frequency.
55%
605 Samples
50%
V
45% 40% 35% 30% 25% 20% 15% 10%
5%
Percentage of Occurrences
0%
= 5.5V
DD
= V
V
CM
DD
TA = +125°C
0
150
300
450
600
750
900
Input Bias Current (pA)
1050
1200
1350
1500

FIGURE 2-6: Input Bias Current at +125°C.

DS21733F-page 4 © 2005 Microchip Technology Inc.
MCP6001/2/4
= -40°C
Note: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND, VCM = VDD/2, V
= 10 kΩ to VDD/2 and CL = 60 pF.
R
L
1,000
Hz)
100
(nV/
Input Noise Voltage Density
10
0.1 101 100 10k1k 100k
1.E-01 1.E+001.E+011.E+021.E+031.E+041.E+0 5Frequency (Hz)
FIGURE 2-7: Input Noise Voltage Density
18%
1225 Samples
16% 14% 12% 10%
Percentage of Occurrences
8% 6% 4% 2% 0%
T
A
VCM = V
-12
= -40°C to +125°C
SS
-8-6-4
-10 Input Offset Voltage Drift (µV/°C)
0
-2

FIGURE 2-10: Input Offset Voltage Drift.

vs. Frequency.
0
VDD = 1.8V
-100
-200
-300
-400
-500
-600
Input Offset Voltage (µV)
-700
-0.4
-0.2 Common Mode Input Voltage (V)
TA = -40°C T
= +25°C
A
T
= +85°C
A
= +125°C
T
A
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
200 150 100
50
0
VDD = 1.8V
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Output Voltage (V)
Input Offset Voltage (µV)
-50
-100
-150
-200
VDD/2,
OUT
2
4
VDD = 5.5V
6
8
VCM = V
10
12
SS
FIGURE 2-8: Input Offset Voltage vs. Common Mode Input Voltage at V
0
VDD = 5.5V
-100
-200
-300
-400
-500
-600
Input Offset Voltage (µV)
-700
0.0
0.5
-0.5
1.0
Common Mode Input Voltage (V)
1.5
2.0
TA = -40°C
T
= +25°C
A
T
= +85°C
A
= +125°C
T
A
2.5
3.0
3.5
= 1.8V.
DD
4.0
4.5
5.0
5.5
6.0
FIGURE 2-9: Input Offset Voltage vs. Common Mode Input Voltage at V
= 5.5V.
DD

FIGURE 2-11: Input Offset Voltage vs. Output Voltage.

30
25
T
A
TA = +25°C
20
T
= +85°C
A
T
= +125°C
A
15
10
Magnitude (mA)
Short Circuit Current
5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Power Supply Voltage (V)

FIGURE 2-12: Output Short-Circuit Current vs. Power Supply Voltage.

© 2005 Microchip Technology Inc. DS21733F-page 5
MCP6001/2/4
Note: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND, VCM = VDD/2, V
= 10 kΩ to VDD/2 and CL = 60 pF.
R
L
1.0 Falling Edge, VDD = 5.5V
0.9
Falling Edge, VDD = 1.8V
0.8
0.7
0.6
0.5
0.4
0.3
Slew Rate (V/µs)
0.2
Rising Edge, VDD = 5.5V
Rising Edge, VDD = 1.8V
0.1
0.0
-50 -25 0 25 50 75 100 125 Ambient Temperature (°C)

FIGURE 2-13: Slew Rate vs. Ambient Temperature.

1,000
VDD – V
100
(mV)
10
Output Voltage Headroom
1
10µ 10m1m100µ
1.E-05 1.E-04 1.E-03 1.E-02
Output Current Magnitude (A)
OH
VOL – V
SS
0.08
G = +1 V/V
0.06
0.04
0.02
0.00
-0.02
-0.04
-0.06
Output Voltage (20 mV/div)
-0.08
0.E+00 1.E-06 2.E-06 3.E-06 4.E-06 5.E-06 6. E-06 7.E-06 8.E-06 9. E-06 1.E-05
Time (1 µs/div)

FIGURE 2-16: Smal l-Signal, Non-Inverting Pulse Response.

5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
Output Voltage (V)
1.0
0.5
0.E+00 1.E -05 2.E-05 3.E-05 4.E-05 5.E-05 6.E-05 7.E-05 8.E-05 9.E-05 1.E-04
0.0 Time (10 µs/div)
OUT
VDD/2,
G = +1 V/V V
= 5.0V
DD

FIGURE 2-14: Output Voltage Headroom vs. Output Current Magnitude.

10
)
P-P
1
Output Voltage Swing (V
0.1
1.E+03 1.E+04 1.E+05 1.E+06
VDD = 5.5V
VDD = 1.8V
1k 10k 100k 1M
Frequency (Hz)

FIGURE 2-15: Output Voltage Swing vs. Frequency.

FIGURE 2-17: Large-Signal, Non-Inverting Pulse Response.

180
VCM = VDD - 0.5V
160 140 120 100
80 60
per amplifier (µA)
40
Quiescent Current
20
TA = +125°C
T
= +85°C
A
T
= +25°C
A
= -40°C
T
A
0
0.00.51.01.52.02.53.03.54.04.55.05.5 Power Supply Voltage (V)

FIGURE 2-18: Quiescent Current vs. Power Supply Voltage.

DS21733F-page 6 © 2005 Microchip Technology Inc.
MCP6001/2/4

3.0 PIN DESCRIPTIONS

Descriptions of the pins are listed in Table 3-1.

TABLE 3-1: PIN FUNCTION TABLE

MCP6001 MCP6001R MCP6001U MCP6002 MCP6004 Symbol Description
11411V 44322V 33133V
52584VDDPositive Power Supply ——— 5 5V ——— 6 6
——— 7 7V ————8V ————9V ————10V
252411V ————12V ————13V ————14V
OUT
IN IN
, V –, V +, V
INB
V
INB OUTB OUTC
INC
INC
IND
IND OUTD
SS
Analog Output (op amp A)
OUTA
– Inverting Input (op amp A)
INA
+ Non-inverting Input (op amp A)
INA
+ Non-inverting Input (op amp B)
Inverting Input (op amp B)
Analog Output (op amp B)
Analog Output (op amp C) – Inverting Input (op amp C) + Non-inverting Input (op amp C)
Negative Power Supply + Non-inverting Input (op amp D) – Inverting Input (op amp D)
Analog Output (op amp D)

3.1 Analog Outputs

The output pins are low-impedance voltage sources.

3.2 Analog Inputs

The non-inverting and inverting inputs are high­impedance CMOS inputs with low bias currents.

3.3 Power Supply (VSS and VDD)

The positive powe r s upp ly (VDD) is 1.8V to 5.5V h igh er than the negative power supply (V operation, the other pins are at voltages between V and VDD.
Typically, these parts are used in a single (positive) supply configuration. In this case, V ground and V
is connected to the supply. VDD will
DD
need a local bypass capacitor (typically 0.01 µF to
0.1 µF) within 2 mm of the VDD pin. These parts can share a bulk capacitor with analog parts (typically
2.2 µF to 10 µF) within 100 mm of the VDD pin.
). For normal
SS
is connected to
SS
SS
© 2005 Microchip Technology Inc. DS21733F-page 7
MCP6001/2/4

4.0 APPLICATION INFORMATION

The MCP6001/2/4 family of op amps is manufactured using Microchip’s state-of-the-art CMOS process and is specifically designed for low-cost, low-power and general-purpose applications. The low supply voltage, low quiescent current and wide bandwidth makes the MCP6001/2/4 ideal for battery-powered applications. This device has high phase margin, which makes it stable for larger capacitive load applications.

4.1 Rail-to-Rail Input

The MCP6001/2/4 op amps are designed to prev ent phase reversal when the input pins exceed the supply voltages. Fi gure 4-1 shows the input voltage exceeding the supply voltage without any phase reversal.
6 5 4 3 2 1 0
Input, Output Voltages (V)
0.E+00 1.E-05 2.E-0 5 3.E-05 4.E-05 5.E-05 6.E-05 7. E-05 8.E-05 9.E-05 1.E-04
-1
V
V
OUT
Time (10 µs/div)
IN

FIGURE 4-1: The MCP6001/2/4 Show No Phase Reversal.

The input stage of the MCP6001/2/4 op amps use two differential input stages in parallel. One operates at a low common mode inp ut vol t age (V operates at a high V operates with a V 300 mV below V measured at V
CM=VSS
to ensure proper operation. Input voltages that exceed the input voltage range
– 0.3V to VDD+ 0.3V at 25°C) can cause
(V
SS
excessive current to flow i nto or out of the input pins , while current beyond ±2mA can cause reliability problems. Applications tha t exceed thi s rating mu st be externally limited with a resistor, as shown in Figure 4-2.
. With this topology, the device
CM
up to 300 mV above VDD and
CM
. The input offset voltage is
SS
– 300 mV and VDD+300mV
VDD = 5.0V G = +2 V/V
), while the other
CM
IN
V
OUT
R
IN
V
IN
Maximum expected V
()VDD–
-------------------------------------------------------------------------------
R
IN
V
SS
----------------------------------------------------------------------------
R
IN
MCP600X +
IN
2 mA
Minimum expected V
()
2 mA
FIGURE 4-2: Input Current Limiting Resistor (R
IN
).

4.2 Rail-to-Rail Output

The output volt age rang e of the MCP6001 /2/4 op a mps
–25mV (min.) and VSS + 25 mV (max.) when
is V
DD
=10kΩ is connected to VDD/2 and VDD = 5.5V.
R
L
Refer to Figure 2-14 for more information.

4.3 Capacitive Loads

Driving large capacitive loads can cause stability prob­lems for volt age f eedbac k op amp s. As the load cap ac­itance increases, the feedback loop’s phase margin decreases and the closed-loop bandwidth is reduced. This produces gain pe aking in th e frequency response, with overshoot and ringing in the step response. While a unity-gain buffer (G = +1) is the most sensitive to capacitive loads, all gains show the same general behavior.
When driving large capacitive loads with these op amps (e.g., > 100 pF when G = +1), a small series resistor at the output (R feedback loop’s phase margin (stability) by making the output load resistive at higher frequencies. The band­width will b e generally lower than the bandwid th with n o capacitance load.
– MCP600X
V
IN
+
in Figure 4-3) improves the
ISO
R
ISO
C
L
V
OUT
FIGURE 4-3: Output resistor, R
ISO
stabiliz es large capacitive loads.
DS21733F-page 8 © 2005 Microchip Technology Inc.
MCP6001/2/4
:
:
Figure 4-4 gives recommended R
values for
ISO
different capacitive loads and gains. The x-axis is the normalized lo ad ca paci tan c e (CL/GN), where GN is the
L/GN
ISO
and the
N
10n
(F)
values
is
N
circuit's noise gain. For non-inverti ng gains, G Signal Gain are equal. For inverting gains, G 1+|Signal Gain| (e.g., -1 V/V gives G
1000
) (
Recommended R
VDD = 5.0V R
= 100 k
L
ISO
100
GN = 1
t 2
G
N
10
10p
1.E-11 1.E-10 1.E-09 1.E-08
Normalized Load Capacitance; C
100p 1n 10n
= +2 V/V).
N
FIGURE 4-4: Recommended R for Capacitive Loads.
After sele cting R resulting frequency response peaking and step response overshoot. Modify R response is reasonable. Bench evaluation and simula­tions with the MCP6001/2/4 SPICE macro model are very helpful.
for your circuit, double-check the
ISO
’s value until the
ISO

4.4 Supply Bypass

With this family of operational amplifiers, the power supply pin (V bypass capacitor (i.e., 0.01 µF to 0.1 µF) within 2 mm for good high-frequency performance. It also needs a bulk capacito r (i.e., 1 µF or la rger) within 100 mm to provide large, s low current s. This bulk c apac itor can b e shared with other analog parts.
for single-supply) should have a local
DD

4.5 PCB Surface Leakage

In applications where low input bias current is critical, Printed Circuit Board (PCB) surface leakage effects need to be considered. Surface leakage is caused by humidity, dust or other contamination on the board. Under low humidity conditions, a typical resistance between nearby traces is 1 0 cause 5 pA of current to flow; which is greater than the MCP6001/2/4 family’ s bias c urrent at 25°C (1 pA, typ.).
The easiest way to reduce surface leakage is to use a guard ring around se nsi tiv e p ins (or t race s). The gua rd ring is biased at the same voltage as the sensitive pin. An example of this type of layout is shown in Figure 4-5.
VIN-V

FIGURE 4-5: Example Guard Ring Layout for Inverting Gain.

1. Non-inverting Gain and Unity-Gain Buffer: a. Connect the non-inverting pin (V
input with a wire that does not touch the PCB surface.
b. Connect the guard ring to the inverting input
pin (V common mode input voltage.
2. Inverting Gain and Transimpedance Gain Amplifiers (convert current to voltage, such as photo detectors):
a. Connect the guard ring to the non-inverting
input pin (V to the same reference voltage as the op amp (e.g., V
b. Connect the inverting pin (VIN–) to the input
with a wire that does not touch the PCB surface.
–). This biases the g uard rin g t o th e
IN
12
Ω. A 5V dif ference would
+
IN
V
SS
Guard Ring
+) to the
IN
+). This bi ases the gua rd ri ng
IN
/2 or ground).
DD
© 2005 Microchip Technology Inc. DS21733F-page 9
MCP6001/2/4

4.6 Application Circuits

4.6.1 UNITY-GAIN BUFFER
The rail-to-rail input and output capability of the MCP6001/2/4 op amp is ideal for unity-gain buffer applications. The low quiescent current and wide bandwidth makes the device suitable for a buffer configuration in an instrumentation amplifier circuit, as shown in Figure 4-6.
1/2
V
OUT
MCP6002
+
1/2
MCP6002
+
V
IN1
V
IN2
R
2
R
2
V
()
IN2VIN1

FIGURE 4-6: Instrumentation Amplifier with Unit y-Gain Buffer Inputs.

4.6.2 ACTIVE LOW-PASS FILTER
The MCP6001/2/4 op amp’s low input bias current makes it possible for the designer to use larger resis­tors and smaller capacitors for active low-pass filter applications. Howev er , as the res istance increases, th e noise generated also in creases. Parasitic capacitan ces and the large value resistors could also modi fy the fre­quency response. These trade-offs need to be considered when selecting circuit elements.
Usually, the op amp bandwidth is 100X the filter cutoff frequency (or higher) for good perf or mance. It is p ossi­ble to have the op amp bandwidth 10X higher th an the cutoff frequency, thus having a design that is more sensitive to component tolerances.
Figure 4-7 shows a second-order Butterworth filter with 100 kHz cutoff frequency and a gain of +1 V/V; the op amp bandwidth is only 10X higher than the cutoff frequency. The component values were sel ecte d usin g Microchip’s FilterLab
®
software.
R
1
MCP6001
+
R
1
V
REF
R
1
------
+=
V R
2
V
OUT
R1 = 20 kΩ
= 10 kΩ
R
2
REF
100 pF
V
IN
14.3 kΩ
53.6 kΩ
33 pF
+
MCP6002
V
OUT

FIGURE 4-7: Active Second-Order Low- Pass Filter.

4.6.3 PEAK DETECTOR
The MCP6001/2/4 op amp ha s a high input impeda nce, rail-to-rail input/outp ut and low input bias current , which makes this device suitable for peak detector applica­tions. Figure 4-8 shows a peak detector circuit with clear and sample switches. The peak-detection cycle uses a clock (CLK), as shown in Figure4-8.
At the rising edge of CLK, Sample Switch closes to
SAMP
is sam-
1
. A t t h e
begin sampling. The peak volt age stored on C pled to C
for a sample time defined by t
2
end of the sampl e time (f all ing edge of Sample Sig nal), Clear Signal goes high and closes the Clear Switch. When the Clear Switch closes, C R
for a time defined by t
1
CLEAR
discharges through
1
. At the end of the clear time (falling edge of Clear Signal), op amp A begins to store the peak value of V t
In order to define t
DETECT
.
SAMP
on C1 for a time defined by
IN
and t
, it is necessary to
CLEAR
determine the capacitor charging and discharging period. The capacitor charging ti me is limited by the amplifier source current, while the discharging time ( is defined using R
(τ = R1C1). t
1
the input signal is sampled on C
is the time that
DETECT
and is dependent on
1
τ)
the input voltage change frequency. The op amp output current limit, and the size of the
storage capacitors (both C ing limitations as the input voltage (V
and C2), could create slew-
1
) increases.
IN
Current through a capacitor is dep endent on the size of the capacitor and the rate of volt age ch ange. From this relationship, the rate of vol tage ch ange or the sle w rate can be determined. For exam ple, with an op amp short­circuit current of I
= 0.1 µF, then:
C
1
= 25 mA and a load capaci tor of
SC
EQUATION 4-1:
dV
C1
=
=
=
250mV μs=
C
1
I
SC
------- -
C
1
25mA
-------------- -
0.1μF
-------------
dt
dV
-------------
dV
C1
-------------
dt
dt
C1
I
SC
DS21733F-page 10 © 2005 Microchip Technology Inc.
This voltage rate of change is less than the MCP6001/2/4 slew rate of 0.6 V/µs. When the input voltage swings below the voltage across C1, D1 becomes reverse­biased. This opens the feedback loop and rails the amplifier. When the input voltage increases, the amplifier recovers at its slew rate. Based on the rate of voltage change shown in the above equation, it takes an extended period of time to charge a 0.1 µF capacitor. The capacitors need to be selected so that the circuit is not limited by the amplifier slew rate. Therefore, the capaci­tors should be less than 40 µF and a stabilizing resistor
) needs to be properly selected. (Refer to
(R
ISO
Section 4.3 “Capacitive Loads”).
V
IN
+
1/2
D
R
1
ISO
V
C1
MCP6002
Op Amp A
C
R
1
1
+
1/2
MCP6002
Op Amp B
MCP6001/2/4
R
V
ISO
C2
+
MCP6001
C
2
Op Amp C
V
OUT
Sample Switch
Clear
Switch
t
SAMP
Sample Signal
t
CLEAR
Clear Signal
t
DETECT
CLK

FIGURE 4-8: Peak Detector with Clear and Sample CMOS Analog Switches.

© 2005 Microchip Technology Inc. DS21733F-page 11
MCP6001/2/4

5.0 DESIGN TOOLS

Microchip provides the basic design tools needed for the MCP6001/2/4 family of op amps.

5.1 SPICE Macro Model

The latest SPICE macro model for the MCP6001/2/4 op amps is available on our web site at www.microchip.com. This model is intended to be an initial design tool that works well in the op amp’s linear region of operation at room temperature. See the model file for information on its capabilities.
Bench testing is a very im portant par t of any design an d cannot be replaced with simulations. Also, simulation results using th is ma cro m od el ne ed to be v ali dated by comparing them to the data sheet spec ifications and characteristic curves.

5.2 FilterLab® Software

Microchip’s FilterLab® software is an innovative software tool that simplifies analog active filter (using op amps) design. A vailable at no cost fr om our web site at www.microchip.com, the FilterLab design tool provides full schematic di agrams of the filter circuit with component values. It also outputs the filter circuit in SPICE format, which can be used with the macro model to simulate actual filter performance.
DS21733F-page 12 © 2005 Microchip Technology Inc.

6.0 PACKAGING INFORMATION

6.1 Package Marking Information
MCP6001/2/4
5-Lead SC-70 (MCP6001)
XXN (Front)
Device
YWW (Back)
MCP6001 AAN CDN
Note: Applies to 5-Lead SC-70.
OR
XXNN
5-Lead SOT-23 (MCP6001/1R/1U)
5
4
XXNN
1 23
Device
MCP6001 AANN CDNN
Note: Applies to 5-Lead SC-70.
Device
MCP6001 AANN CDNN MCP6001R ADNN CENN MCP6001U AFNN CFNN
Note: Applies to 5-Lead SOT-23.
I-Temp
Code
I-Temp
Code
I-Temp
Code
E-Temp
Code
E-Temp
Code
E-Temp
Code
Example: (I-Temp)
AA7 (Front)
432 (Back)
OR
AA74
Example: (E-Temp)
5
4
CD25
1 23
8-Lead PDIP (300 mil)
XXXXXXXX XXXXXNNN
YYWW
Example:
MCP6002
I/P256
0432
Legend: XX...X Customer specific information*
YY Year code (last 2 digits of calendar year) WW Week code (week of January 1 is week ‘01’) NNN Alphanumeric traceability code
Note: In the event the full Micro chip p art num ber can not be ma rked on on e line, it will
be carried over to the next line thus limiti ng the number of available characters for customer specific information.
* Standard marking consists of Microchip part number, year code, week code, traceability code (facility
code, mask rev#, and assembly code). For marking beyond this, certain price adders apply. Please check with your Microchip Sales Office.
© 2005 Microchip Technology Inc. DS21733F-page 13
MCP6001/2/4
Package Marking Information (Continued)
8-Lead SOIC (150 mil)
XXXXXXXX XXXXYYWW
NNN
8-Lead MSOP
XXXXXX
YWWNNN
14-Lead PDIP (300 mil) (MCP6004)Example:
XXXXXXXXXXXXXX XXXXXXXXXXXXXX
YYWWNNN
Example:
MCP6002
I/SN0432
256
Example:
6002I
432256
MCP6004-I/P
0432256
14-Lead SOIC (150 mil) (MCP6004)
XXXXXXXXXX XXXXXXXXXX
YYWWNNN
14-Lead TSSOP (MCP6004)
XXXXXX
YYWW
NNN
Example:
MCP6004ISL
0432256
Example:
6004ST
0432
256
DS21733F-page 14 © 2005 Microchip Technology Inc.
5-Lead Plastic Package (SC-70)
E
E1
MCP6001/2/4
D
p
n
Q1
c
Number of Pins Pitch
Molded Package Thickness Standoff
Molded Package Width
Top of Molded Pkg to Lead Shoulder Lead Thickness
A2 A1
E1
Q1
B
1
A2
A1
L
MILLIMETERS*INCHESUnits
MINDimension Limits n p
c
NOM
.004 .016 0.10 0.40
MINMAX
NOM
55
0.65 (BSC).026 (BSC)
A
MAX
1.100.80.043.031AOverall Height
1.000.80.039.031
0.100.00.004.000
2.401.80.094.071EOverall Width
1.351.15.053.045
2.201.80.087.071DOverall Length
0.300.10.012.004LFoot Length
0.180.10.007.004
0.300.15.012.006BLead Width
*Controlling Parameter Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .005" (0.127mm) per side.
JEITA (EIAJ) Standard: SC-70
Drawing No. C04-061
© 2005 Microchip Technology Inc. DS21733F-page 15
MCP6001/2/4
5-Lead Plastic Small Outline Transistor (OT) (SOT23)
E E1
p
B
p1
D
n
c
β
Number of Pins Pitch Outside lead pitch (basic)
Foot Angle Lead Thickne ss
Mold Draft Angle Top Mold Draft Angle Bottom
* Controlling Parameter
§ Significant Characteristic Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side. JEDEC Equivalent: MO-178 Drawing No. C04-091
1
A
φ
L
n p
p1
φ
c
α β
.038
A1
MILLIMETERSINCHES*Units
0.95
1.90.075
α
A2
MAXNOMMINMAXNOMMINDimension Limits
55
1.451.180.90.057.046.035AOverall Height
1.301.100.90.051.043.035A2Molded Packag e Thick ness
0.150.080.00.006.003.000A1Standoff §
3.002.802.60.118.110.102EOverall Width
1.751.631.50.069.064.059E1Molded Package Width
3.102.952.80.122.116.110DOverall Length
0.550.450.35.022.018.014LFoot Length 10501050
0.200.150.09.008.006.004
0.500.430.35.020.017.014BLead Width 10501050 10501050
DS21733F-page 16 © 2005 Microchip Technology Inc.
8-Lead Plastic Dual In-line (P) – 300 mil (PDIP)
E1
D
2
MCP6001/2/4
n
E
β
eB
Number of Pins Pitch Top to Seating Plane A .140 .155 .170 3.56 3.94 4.32 Molded Package Thickness A2 .115 .130 .145 2.92 3.30 3.68 Base to Seating Plane A1 .015 0.38 Shoulder to Shoulder Width E .300 .313 .325 7.62 7.94 8.26 Molded Package Width E1 .240 .250 .260 6.10 6.35 6.60 Overall Length D .360 .373 .385 9.14 9.46 9.78 Tip to Seating Plane L .125 .130 .135 3.18 3.30 3.43 Lead Thickness Upper Lead Width B1 .045 .058 .070 1.14 1.46 1.78 Lower Lead Width B .014 .018 .022 0.36 0.46 0.56 Overall Row Spacing § eB .310 .370 .430 7.87 9.40 10.92 Mold Draft Angle Top Mold Draft Angle Bottom * Controlling Parameter
§ Significant Characteristic Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side. JEDEC Equivalent: MS-001 Drawing No. C04-018
Dimension Limits MIN NOM MAX MIN NOM MAX
1
α
A
c
Units INCHES* MILLIMETERS
n p
c
α β
.008 .012 .015 0.20 0.29 0.38
A1
B1
B
88
.100 2.54
51015 51015 51015 51015
A2
L
p
© 2005 Microchip Technology Inc. DS21733F-page 17
MCP6001/2/4
8-Lead Plastic Small Outline (SN) – Narrow, 150 mil (SOIC)
E
E1
p
D
2
B
Number of Pins Pitch
Foot Angle Lead Thickness
Mold Draft Angle Top Mold Draft Angle Bottom
* Controlling Parameter
§ Significant Characteristic Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side. JEDEC Equivalent: MS-012 Drawing No. C04-057
n
45°
c
β
n p
φ
c
α β
1
h
A
φ
L
048048
A1
MILLIMETERSINCHES*Units
1.27.050
α
A2
MAXNOMMINMAXNOMMINDimension Limits
88
1.751.551.35.069.061.053AOverall Height
1.551.421.32.061.056.052A2Molded Package Thickness
0.250.180.10.010.007.004A1Standoff §
6.206.025.79.244.237.228EOverall Width
3.993.913.71.157.154.146E1Molded Package Width
5.004.904.80.197.193.189DOverall Length
0.510.380.25.020.015.010hChamfer Distance
0.760.620.48.030.025.019LFoot Length
0.250.230.20.010.009.008
0.510.420.33.020.017.013BLead Width 1512015120 1512015120
DS21733F-page 18 © 2005 Microchip Technology Inc.
8-Lead Plastic Micro Small Outline Package (MS) (MSOP)
E
E1
p
D
2
B
n 1
MCP6001/2/4
α
L
8
.033
.006 .012
A
φ
A1
MAX NOM
--
.043 .037 .006
-
.009
.016
-
MIN
.031
15° 15°
0.75
0.00
0.40
0.08
0.22
c
(F)
β
Dimension Limits
Units
Number of Pins Pitch Overall Height Molded Package Thickness Standoff Overall Width Molded Package Width Overall Length Foot Length
Foot Angle Lead Thickness Lead Width Mold Draft Angle Top Mold Draft Angle Bottom
*Controlling Parameter Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" (0.254mm) per side.
JEDEC Equivalent: MO-187
Drawing No. C04-111
MIN
n p
A
A2
A1
E
E1
D
L
φ
c
B
α β
INCHES
NOM
.026 BSC
.030 .000
.193 TYP. .118 BSC .118 BSC
.016 .024
.037 REFFFootprint (Reference)
- 8° .003 .009
-
MILLIMETERS*
8
0.65 BSC
--
0.85
4.90 BSC
3.00 BSC
3.00 BSC
0.60
0.95 REF
MAX
-
-
-
-
A2
1.10
0.95
0.15
0.80
0.23
0.40 15° ­15° -
© 2005 Microchip Technology Inc. DS21733F-page 19
MCP6001/2/4
14-Lead Plastic Dual In-line (P) – 300 mil (PDIP)
E1
D
2
n
E
β
eB
Number of Pins Pitch Top to Seating Plane A .140 .155 .170 3.56 3.94 4.32 Molded Package Thickness A2 .115 .130 .145 2.92 3.30 3.68 Base to Seating Plane A1 .015 0.38 Shoulder to Shoulder W idth E .300 .313 .325 7.62 7.94 8.26 Molded Package Width Overall Length D .740 .750 .760 18.80 19.05 19.30 Tip to Seating Plane L .125 .130 .135 3.18 3.30 3.43 Lead Thickness Upper Lead Width B1 .045 .058 .070 1.14 1.46 1.78 Lower Lead Width B .014 .018 .022 0.36 0.46 0.56 Overall Row Spacing § eB .310 .370 .430 7.87 9.40 10.92 Mold Draft Angle Top Mold Draft Angle Bottom
* Controlling Parameter
§ Significant Characteristic Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side.
JEDEC Equivalent: MS-001 Drawing No. C04-005
1
A
c
A1
Dimension Limits MIN NOM MAX MIN NOM MA X
Units INCHES* MILLIMETERS
n p
E1
c
α β
.240 .250 .260 6.10 6.35 6.60
.008 .012 .015 0.20 0.29 0.38
5 10 15 5 10 15 5 10 15 5 10 15
B1
B
14 14
.100 2.54
α
A2
L
p
DS21733F-page 20 © 2005 Microchip Technology Inc.
14-Lead Plastic Small Outline (SL) – Narrow, 150 mil (SOIC)
E
E1
p
D
2
B
n
1
MCP6001/2/4
45°
c
β
Number of Pins Pitch
Foot Angle Lead Thickne ss
Mold Draft Angle Top Mold Draft Angle Bottom
* Controlling Parameter
§ Significant Characteristic Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side. JEDEC Equivalent: MS-012 Drawing No. C04-065
h
A
φ
L
n p
φ
c
α β
A1
048048
α
MILLIMETERSINCHES*Units
A2
MAXNOMMINMAXNOMMINDimension Limits
1414
1.27.050
1.751.551.35.069.061.053AOverall Height
1.551.421.32.061.056.052A2Molded Package Thickness
0.250.180.10.010.007.004A1Standoff §
6.205.995.79.244.236.228EOverall Width
3.993.903.81.157.154.150E1Molded Package Width
8.818.698.56.347.342.337DOverall Length
0.510.380.25.020.015.010hChamfer Distance
1.270.840.41.050.033.016LFoot Length
0.250.230.20.010.009.008
0.510.420.36.020.017.014BLead Width 1512015120 1512015120
© 2005 Microchip Technology Inc. DS21733F-page 21
MCP6001/2/4
14-Lead Plastic Thin Shrink Small Outline (ST) – 4.4 mm (TSSOP)
E
E1
p
D
2
n
B
1
A
c
φ
β
Number of Pins Pitch
Foot Angle Lead Thickne ss
Mold Draft Angle Top Mold Draft Angle Bottom
* Controlling Parameter
§ Significant Characteristic Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .005” (0.127mm) per side. JEDEC Equivalent: MO-153 Drawing No. C04-087
n p
φ
c
α β
L
MILLIMETERS*INCHESUnits
0.65.026
α
A2A1
MAXNOMMINMAXNOMMINDimension Limits
1414
1.10.043AOverall Height
0.950.900.85.037.035.033A2Molded Package Thickness
0.150.100.05.006.004.002A1Standoff §
6.506.386.25.256.251.246EOverall Width
4.504.404.30.177.173.169E1Molded Pa ckag e Width
5.105.004.90.201.197.193DMolded Package Length
0.700.600.50.028.024.020LFoot Length 840840
0.200.150.09.008.006.004
0.300.250.19.012.010.007B1Lead Width
10501050 10501050
DS21733F-page 22 © 2005 Microchip Technology Inc.
APPENDIX A: REVISION HISTORY
Revision F (March 2005)
Updated 6.0 “Packaging Information” to include old and new packaging examples.
Revision E (December 2004)
The following is the list of modifications:
1. V
2. Corrected package markings in Section 6.0
3. Added Appendix A: Revision History.
Revision D (May 2003) Revision C (December 2002) Revision B (October 2002)
specification reduced to ±4.5 mV from
OS
±7.0 mV for parts starting with date code YYWW = 0449
“Packaging Information”
MCP6001/2/4
Revision A (June 2002)
Original data sheet release.
© 2005 Microchip Technology Inc. DS21733E-page 23
MCP6001/2/4
NOTES:
DS21733E-page 24 © 2005 Microchip Technology Inc.
MCP6001/2/4
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO. X /XX
Device
PackageTemperature
Range
Device: MCP6001T: Single Op Amp (Tape and Reel)
MCP6001RT: Single Op Amp (Tape and Reel) (SOT-23) MCP6001UT: Single Op Amp (Tape and Reel) (SOT-23) MCP6002: Dual Op Amp MCP6002T: Dual Op Amp (Tape and Reel)
MCP6004: Quad Op Amp MCP6004T: Quad Op Amp (Tape and Reel)
Temperature Range: I = -40°C to +85°C
Package: LT = Plastic Package (SC-70), 5-lead (MCP6001 only)
E = -40°C to +125°C
OT = Plastic Small Outline Transistor (SOT-23), 5-lead MS = Plastic MSOP, 8-lead
P = Plastic DIP (300 mil Body), 8-lead, 14-lead SN = Plastic SOIC, (150 mil Body), 8-lead SL = Plastic SOIC (150 mil Body), 14-lead ST = Plastic TSSOP (4.4mm Body), 14-lead
(SC-70, SOT-23)
(SOIC, MSOP)
(SOIC, MSOP)
(MCP6001, MCP6001R, MCP6001U)
Examples:
a) MCP6001T-I/LT: Tape and Reel,
Industrial Temperature, 5LD SC-70 package
b) MCP6001T-I/OT: Tape and Reel,
Industrial Temperature, 5LD SOT-23 package.
c) MCP6001RT-I/OT: Tape and Reel,
Industrial Temperature, 5LD SOT-23 package.
d) MCP6001UT-E/OT: Tape and Reel,
Extended Temperature, 5LD SOT-23 package.
a) MCP6002-I/MS: Industrial Temperature,
8LD MSOP package.
b) MCP6002-I/P: Industrial Temperature,
8LD PDIP package.
c) MCP6002-E/P: Extended Temperat ure,
8LD PDIP package.
d) MCP6002-I/SN: Industrial Temperature,
8LD SOIC package.
e) MCP6002T-I/MS: Tape and Reel,
Industrial Temperature, 8LD MSOP package.
a) MCP6004-I/P: Industrial Temperature,
14LD PDIP package.
b) MCP6004-I/SL: Industrial T emperature,,
14LD SOIC package.
c) MCP6004-E/SL: Extended T emperature,,
14LD SOIC package.
d) MCP6004-I/ST: Industrial Temperature,
14LD TSSOP package.
e) MCP6004T-I/SL: Tape and Reel,
Industrial Temperature, 14LD SOIC package.
f) MCP6004T-I/ST: Tape and Reel,
Industrial Temperature, 14LD TSSOP package.
Sales and Support
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1. Your local Microchip sales off ice
2. The Microchip Worldwide Site (www.microchip.com) Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
Customer Notification System
Register on our web site (www.microchip.com) to receive the most current information on our products.
© 2005 Microchip Technology Inc. DS21733E-page 25
MCP6001/2/4
NOTES:
DS21733E-page 26 © 2005 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
Microchip products meet the specification contained in their particular Microchip Data Sheet.
Microchip believes that its family of products is one of the most secure families of its kind on t he market today, when used i n the intended manner and under normal conditions.
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are com mitted to continuously improving the code protect ion f eatures of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digit al Mill ennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WAR­RANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of M icrochip’s prod ucts as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, Accuron, dsPIC, K
EELOQ, microID, MPLAB, PIC, PICmicro,
PICSTART, PRO MATE, PowerSmart, rfPIC, and SmartShunt are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries.
AmpLab, FilterLab, MXDEV, MXLAB, PICMASTER, SEEVAL, SmartSensor and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, dsPICDEM, dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPI C, Migra table Memory, MPASM, MPLIB, MPLINK, MPSIM, PICkit, PICDEM, PICDEM.net, PICLAB, PICtail, PowerCal, PowerInfo, PowerMate, PowerTool, rfLAB , rfPICD EM, Select Mode, Sm art Serial, SmartTel and Total Endurance are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip T echnology Incorporated in the U.S.A.
All other trademarks mentioned herein are property of their respective companies.
© 2005, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received ISO/TS-16949:2002 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona and Mountain View, California in October 2003. The Company’s quality system processes and procedures are for its PICmicro devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified.
®
8-bit MCUs, KEELOQ
®
code hopping
© 2005 Microchip Technology Inc. DS21733E-page 27
WORLDWIDE SALES AND SERVICE
AMERICAS
Corporate Office
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10/20/04
DS21733E-page 28 © 2005 Microchip Technology Inc.
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