MICROCHIP MCP414X, MCP416X, MCP424X, MCP426X Technical data

MCP414X/416X/424X/426X

1 2 3 4

5

6

7

8

P0W

P0B P0A

V

SS

V

DD

MCP41X1

Single Potentiometer

PDIP, SOIC, MSOP,

CS

SDI/SDO

SCK

1 2 3 4

5

6

7

8

P0B

SDO P0W

V

DD

MCP41X2

Single Rheostat

PDIP, SOIC, MSOP,

1 2 3 4

11

12

13

14

SHDN

SDO WP

V

DD

MCP42X1 Dual Potentiometers

PDIP, SOIC, TSSOP

5 6 7

8

9

10

P0W

P0B P0A

P1A

P1W

P1B

V

SS

CS

SDI

SCK

V

SS

CS

SDI

SCK

1 2

3 4

11

12

13

14

SDO

SHDN

4x4 QFN

5

6

78

9

10

P0B

NC

P0W

P0A

P1A

P1W

V

SS

SCK

V

SS

SDI

15

16

P1B

V

DD

CS

WP

1 2 3 4

7

8

9

10

SDO

V

DD

MCP42X2 Dual Rheostat

MSOP, DFN

5

6

P0B P0W P1W

P1B

V

SS

CS

SDI

SCK

3x3 DFN

7/8-Bit Single/Dual SPI Digital POT with

Non-Volatile Memory

Features

• Single or Dual Resistor Network options

• Potentiometer or Rheostat configuration options

• Resistor Network Resolution

- 7-bit: 128 Resistors (129 Steps)

- 8-bit: 256 Resistors (257 Steps) Resistances options of:

•R

AB

-5kΩ

-10kΩ

-50kΩ

- 100 kΩ

Description

The MCP41XX and MCP42XX devices offer a wide range of product offerings using an SPI interface. This family of devices support 7-bit and 8-bit resistor networks, Non-Volatile memory configurations, and Potentiometer and Rheostat pinouts.

WiperLock Technology allows application-specific calibration settings to be secured in the EEPROM.

Package Types

• Zero-Scale to Full-Scale Wiper operation

• Low Wiper Resistance: 75Ω (typ.)

• Low Tempco:

- Absolute (Rheostat): 50 ppm typical

(0°C to 70°C)

- Ratiometric (Potentiometer): 15 ppm typical

• Non-volatile Memory

- Automatic Recall of Saved Wiper Setting

- WiperLock™ Technology

• SPI serial interface (10 Mhz, modes 0,0 & 1,1)

- High-Speed Read/Writes to wiper registers

- Read/Write to Data EEPROM registers

- Serially enabled EEPROM write protect

- SDI/SDO multiplexing (MCP41X1 only)

• Resistor Network Terminal Disconnect Feature via:

- Shutdown pin (SHDN

- Terminal Control (TCON) Register

• Write Protect Feature:

- Hardware Write Protect (WP

- Software Write Protect (WP) Configuration bit

• Brown-out reset protection (1.5V typical)

)

) Control pin

• Serial Interface Inactive current (2.5 uA typ.)

• High-Voltage Tolerant Digital Inputs: Up to 12.5V

• Supports Split Rail Applications

• Internal weak pull-up on all digital inputs

Specified

• Wide Operating Voltage:

- 2.7V to 5.5V - Device Characteristics

- 1.8V to 5.5V - Device Operation

• Wide Bandwidth (-3dB) Operation:

- 2 MHz (typ.) for 5.0 kΩ device

• Extended temperature range (-40°C to +125°C)

MCP414X/416X/424X/426X

Power-up/ Brown-out Control

VDD

V

SS

SPI Serial Interface Module & Control Logic (WiperLock™ Technology)

Resistor Network 0

(Pot 0) Wiper 0

& TCON Register

Resistor Network 1

(Pot 1) Wiper 1

& TCON Register

CS

SCK

SDI

SDO

WP

SHDN

Memory (16x9)

Wiper0 (V & NV) Wiper1 (V & NV)

TCON STATUS

Data EEPROM (10 x 9-bits)

P0A

P0W

P0B

P1A

P1W

P1B

For Dual Resistor Network Devices Only

For Dual Potentiometer Devices Only

Device Block Diagram

Device Features

Resistance (typical)

Device

MCP4131 MCP4132

(3)

1 Potentiometer

(3)

1 Rheostat SPI RAM No Mid-Scale 5.0, 10.0, 50.0, 100.0 75 129 1.8V to 5.5V

MCP4141 1 Potentiometer

Wiper

Configuration

# of POTs

Type

Memory

Control

Interface

(1)

SPI RAM No Mid-Scale 5.0, 10.0, 50.0, 100.0 75 129 1.8V to 5.5V

(1)

SPI EE Yes NV Wiper 5.0, 10.0, 50.0, 100.0 75 129 2.7V to 5.5V

WiperLock

Technology

POR Wiper

R

Setting

Options (kΩ)

AB

MCP4142 1 Rheostat SPI EE Yes NV Wiper 5.0, 10.0, 50.0, 100.0 75 129 2.7V to 5.5V MCP4151 MCP4152

(3)

1 Potentiometer

(3)

1 Rheostat SPI RAM No Mid-Scale 5.0, 10.0, 50.0, 100.0 75 257 1.8V to 5.5V MCP4161 1 Potentiometer MCP4162 1 Rheostat SPI EE Yes NV Wiper 5.0, 10.0, 50.0, 100.0 75 257 2.7V to 5.5V MCP4231 MCP4232

(3)

2 Potentiometer

(3)

2 Rheostat SPI RAM No Mid-Scale 5.0, 10.0, 50.0, 100.0 75 129 1.8V to 5.5V MCP4241 2 Potentiometer MCP4242 2 Rheostat SPI EE Yes NV Wiper 5.0, 10.0, 50.0, 100.0 75 129 2.7V to 5.5V MCP4251 MCP4252 MCP4261 2 Potentiometer MCP4262 2 Rheostat SPI EE Yes NV Wiper 5.0, 10.0, 50.0, 100.0 75 257 2.7V to 5.5V

Note 1: Floating either terminal (A or B) allows the device to be used as a Rheostat (variable resistor).

(3)

2 Potentiometer

(3)

2 Rheostat SPI RAM No Mid-Scale 5.0, 10.0, 50.0, 100.0 75 257 1.8V to 5.5V

2: Analog characteristics only tested from 2.7V to 5.5V unless otherwise noted. 3: Please check Microchip web site for device release and availability

(1)

SPI RAM No Mid-Scale 5.0, 10.0, 50.0, 100.0 75 257 1.8V to 5.5V

(1)

SPI EE Yes NV Wiper 5.0, 10.0, 50.0, 100.0 75 257 2.7V to 5.5V

(1)

SPI RAM No Mid-Scale 5.0, 10.0, 50.0, 100.0 75 129 1.8V to 5.5V

(1)

SPI EE Yes NV Wiper 5.0, 10.0, 50.0, 100.0 75 129 2.7V to 5.5V

(1)

SPI RAM No Mid-Scale 5.0, 10.0, 50.0, 100.0 75 257 1.8V to 5.5V

(1)

SPI EE Yes NV Wiper 5.0, 10.0, 50.0, 100.0 75 257 2.7V to 5.5V

Wiper

- RW (Ω)

# of Steps

VDD

Operating

Range

(2)

MCP414X/416X/424X/426X

1.0 ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings †

Voltage on VDD with respect to VSS............... -0.6V to +7.0V

Voltage on CS SHDN Voltage on all other pins (PxA, PxW, PxB, and SDO) with respect to V Input clamp current, I (V

< 0, VI > VDD, VI > VPP ON HV pins)......................±20 mA

I

Output clamp current, I (V

< 0 or VO > VDD) ..................................................±20 mA

O

Maximum output current sunk by any Output pin

......................................................................................25mA

Maximum output current sourced by any Output pin

......................................................................................25mA

Maximum current out of V Maximum current into V Maximum current into P

Storage temperature ....................................-65°C to +150°C

Ambient temperature with power applied

-40°C to +125°C

Total power dissipation (Note 1)................................400 mW

Soldering temperature of leads (10 seconds).............+300°C

ESD protection on all pins ..................................≥ 4 kV (HBM),

.......................................................................... ≥ 300V (MM)

Maximum Junction Temperature (T

Note 1: Power dissipation is calculated as follows:

, SCK, SDI, SDI/SDO, WP, and

with respect to VSS

......................................

SS ............................

IK

OK

SS

pin....................................100 mA

DD

XA, PXW & PXB pins ............±2.5 mA

Pdis = VDD x {IDD - ∑ IOH} + ∑ {(VDD-VOH) x IOH} + ∑(VOl x IOL)

-0.6V to 12.5V

-0.3V to VDD + 0.3V

pin.................................100 mA

) ......................... +150°C

J

† Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.

MCP414X/416X/424X/426X

AC/DC CHARACTERISTICS

Standard Operating Conditions (unless otherwise specified)

Operating Temperature –40°C ≤ TA ≤ +125°C (extended)

DC Characteristics

Parameters Sym Min Typ Max Unit s Conditions

Supply Voltage V

, SDI, SDO,

CS

DD

VHV V SCK, WP, SHDN pin Voltage Range

DD Start Voltage

V

BOR

to ensure Wiper Reset

DD Rise Rate to

V

DDRR

ensure Power-on Reset

Delay after device

T

BORD

exits the reset state (VDD > V

Supply Current

BOR

)

I

DD

(Note 10)

Note 1: Resistance is defined as the resistance between te rminal A to terminal B.

2: INL and DNL are measured at V 3: MCP4XX1 only. 4: MCP4XX2 only, inclu des V 5: Resistor terminals A, W and B’s polarity with respect to each other is not restricted. 6: This specification by design. 7: Non-linearity is affected by wiper resistance (R

temperature.

8: The MCP4XX1 is externally connected to match the configurations of the MCP41X2 and MCP42X2, and

then tested.

9: POR/BOR is not rate dependent. 10: Supply current is independent of current through the resistor network

All parameters apply across the specified operating ranges unless noted.

= +2.7V to 5.5V, 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ devices.

V

DD

Typical specifications represent values for VDD = 5.5V, TA = +25°C.

2.7 — 5.5 V

1.8 — 2.7 V Serial Interface only. — 12.5V V VDD ≥

SS

VSS —VDD +

VVDD <

8.0V

4.5V

The CS pin will be at one of three input levels (VIL, VIH or V

IHH

— — 1.65 V RAM retention voltage (V

(Note 9)V/ms

—1020µS

— — 450 µA Serial Interface Active,

VDD = 5.5V, CS = VIL, SCK @ 5 MHz, write all

0’s to volatile Wiper 0 (address

0h)

— — 1 mA EE Write Current,

= 5.5V, CS = VIL, SCK @ 5 MHz,

V

DD

write all 0’s to non-volatile Wiper 0 (address 2h)

— 2.5 5 µA Serial Interface Inactive,

= VIH, VDD = 5.5V

CS

— 0.55 1 mA Serial Interface Active,

= 5.5V, CS = V

V

DD

IHH

, SCK @ 5 MHz, decrement non-volatile Wiper 0 (address 2h)

with VA = VDD and VB = VSS.

WZSE

W

and V

WFSE

.

), which changes significantly over voltage and

W

). (Note 6)

) < V

RAM

BOR

MCP414X/416X/424X/426X

AC/DC CHARACTERISTICS (CONTINUED)

Standard Operating Conditions (unless otherwise specified)

Operating Temperature –40°C ≤ T

DC Characteristics

All parameters apply across the specified operating ranges unless noted.

= +2.7V to 5.5V, 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ devices.

V

DD

Typical specifications represent values for V

Parameters Sym Min Typ Max Unit s Conditions

Resistance (± 20%)

R

AB

4.0 5 6.0 kΩ -502 devices (Note 1)

8.0 10 12.0 kΩ -103 devices (Note 1)

40.0 50 60.0 kΩ -503 devices (Note 1)

80.0 100 120.0 kΩ -104 devices (Note 1)

Resolution N 257 Taps 8-bit No Missing Codes

129 Taps 7-bit No Missing Codes

Step Resistance R

—RAB /

S

— Ω 8-bit Note 6

(256)

—R

AB

/

— Ω 7-bit Note 6

(128)

- R

|

Nominal Resistance Match

Wiper Resistance (Note 3, Note 4)

Nominal Resistance Tempco

Ratiometeric

|R

AB0

AB1

/ RAB

|R

- R

BW0

BW1

/ R

BW

R

W

ΔRAB/ΔT — 50 — ppm/°C TA = -20°C to +70°C

/ΔT — 15 — ppm/°C Code = Midscale (80h or 40h)

ΔV

WB

— 0.2 1.25 % MCP42X1 devices only

—0.251.5%MCP42X2 devices only,

|

— 75 160 Ω VDD = 5.5 V, IW = 2.0 mA, code = 00h — 75 300 Ω V

— 100 — ppm/°C T — 150 — ppm/°C TA = -40°C to +125°C

Tempco Resistor Terminal

V

A,VW,VB

Vss — V

DD

Input Voltage Range (Terminals A, B and W)

Maximum current

I

W

——2.5mANote 6, Worst case current through

through A, W or B

Leakage current into A, W or B

I

WL

—100—nAMCP4XX1 PxA = PxW = PxB = V —100—nAMCP4XX2 PxB = PxW = VSS

Note 1: Resistance is defined as the resistance between terminal A to terminal B.

2: INL and DNL are measured at V

with VA = VDD and VB = VSS.

W

3: MCP4XX1 only. 4: MCP4XX2 only, inclu des V

WZSE

and V

WFSE

.

5: Resistor terminals A, W and B’s polarity with respect to each other is not restricted. 6: This specification by design. 7: Non-linearity is affected by wiper resistance (R

), which changes significantly over voltage and

W

temperature.

8: The MCP4XX1 is externally connected to match the configurations of the MCP41X2 and MCP42X2, and

then tested.

9: POR/BOR is not rate dependent. 10: Supply current is independent of current through the resistor network

≤ +125°C (extended)

A

= 5.5V, TA = +25°C.

DD

Code = Full-Scale

= 2.7 V, IW = 2.0 mA, code = 00h

DD

= -40°C to +85°C

A

V Note 5, Note 6

wiper when wiper is either Full Scale or Zero Scale.

SS

MCP414X/416X/424X/426X

AC/DC CHARACTERISTICS (CONTINUED)

Standard Operating Conditions (unless otherwise specified)

Operating Temperature –40°C ≤ T

DC Characteristics

All parameters apply across the specified operating ranges unless noted.

= +2.7V to 5.5V, 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ devices.

V

DD

Typical specifications represent values for V

Parameters Sym Min Typ Max Units Conditions

Full-Scale Error (MCP4XX1 only) (8-bit code = 100h, 7-bit code = 80h)

V

WFSE

-6.0 -0.1 — LSb 5 kΩ 8-bit 3.0V ≤ VDD ≤ 5.5V

-4.0 -0.1 — LSb 7-bit 3.0V ≤ VDD ≤ 5.5V

-3.5 -0.1 — LSb 10 kΩ 8-bit 3.0V ≤ VDD ≤ 5.5V

-2.0 -0.1 — LSb 7-bit 3.0V ≤ VDD ≤ 5.5V

-0.8 -0.1 — LSb 50 kΩ 8-bit 3.0V ≤ V

-0.5 -0.1 — LSb 7-bit 3.0V ≤ VDD ≤ 5.5V

-0.5 -0.1 — LSb 100 kΩ 8-bit 3.0V ≤ VDD ≤ 5.5V

-0.5 -0.1 — LSb 7-bit 3.0V ≤ VDD ≤ 5.5V

Zero-Scale Error (MCP4XX1 only) (8-bit code = 00h, 7-bit code = 00h)

V

WZSE

—+0.1+6.0LSb5kΩ 8-bit 3.0V ≤ VDD ≤ 5.5V — +0.1 +3.0 LSb 7-bit — +0.1 +3.5 LSb 10 kΩ 8-bit 3.0V ≤ VDD ≤ 5.5V — +0.1 +2.0 LSb 7-bit — +0.1 +0.8 LSb 50 kΩ 8-bit 3.0V ≤ V — +0.1 +0.5 LSb 7-bit — +0.1 +0.5 LSb 100kΩ 8-bit 3.0V ≤ VDD ≤ 5.5V — +0.1 +0.5 LSb 7-bit

Potentiometer Integral Non-linearity

Potentiometer Differential Non-linearity

Bandwidth -3 dB (See Figure 2-58, load = 30 pF)

INL -1 ±0.5 +1 LSb 8-bit 3.0V ≤ V

-0.5 ±0.25 +0.5 LSb 7-bit

DNL -0.5 ±0.25 +0.5 LSb 8-bit 3.0V ≤ V

-0.25 ±0.125 +0.25 LSb 7-bit

BW — 2 — MHz 5 kΩ 8-bit Code = 80h

— 2 — MHz 7-bit Code = 40h —1—MHz10kΩ 8-bit Code = 80h — 1 — MHz 7-bit Code = 40h —200—kHz50kΩ 8-bit Code = 80h — 200 — kHz 7-bit Code = 40h —100—kHz100kΩ 8-bit Code = 80h — 100 — kHz 7-bit Code = 40h

Note 1: Resistance is defined as the resistance between terminal A to terminal B.

2: INL and DNL are measured at V

with VA = VDD and VB = VSS.

W

3: MCP4XX1 only. 4: MCP4XX2 only, includes V

WZSE

and V

WFSE

.

5: Resistor terminals A, W and B’s polarity with respect to each other is not restricted. 6: This specification by design. 7: Non-linearity is affected by wiper resistance (R

), which changes significantly over voltage and

W

temperature.

8: The MCP4XX1 is externally connected to match the configura tions of the MCP41X2 and MCP42X2, and

then tested.

9: POR/BOR is not rate dependent. 10: Supply current is independent of current through the resistor network

≤ +125°C (extended)

A

= 5.5V, TA = +25°C.

DD

MCP4XX1 devices only (Note 2)

≤ 5.5V

DD

≤ 5.5V

DD

≤ 5.5V

MCP414X/416X/424X/426X

AC/DC CHARACTERISTICS (CONTINUED)

Standard Operating Conditions (unless otherwise specified)

Operating Temperature –40°C ≤ T

DC Characteristics

All parameters apply across the specified operating ranges unless noted.

= +2.7V to 5.5V, 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ devices.

V

DD

Typical specifications represent values for V

Parameters Sym Min Typ Max Units Conditions

Rheostat Integral Non-linearity MCP41X1 (Note 4, Note 8) MCP4XX2 devices only

R-INL -1.5 ±0.5 +1.5 LSb 5 kΩ 8-bit 5.5V, I

-8.25 +4.5 +8.25 LSb 3.0V, IW = 480 µA

-1.125 ±0.5 +1.125 LSb 7-bit 5.5V, I

-6.0 +4.5 +6.0 LSb 3.0V, IW = 480 µA

(Note 4)

-1.5 ±0.5 +1.5 LSb 10 kΩ 8-bit 5.5V, I

-5.5 +2.5 +5.5 LSb 3.0V, IW = 240 µA

-1.125 ±0.5 +1.125 LSb 7-bit 5.5V, I

-4.0 +2.5 +4.0 LSb 3.0V, IW = 240 µA

-1.5 ±0.5 +1.5 LSb 50 kΩ 8-bit 5.5V, I

-2.0 +1 +2.0 LSb 3.0V, IW = 48 µA

-1.125 ±0.5 +1.125 LSb 7-bit 5.5V, I

-1.5 +1 +1.5 LSb 3.0V, IW = 48 µA

-1.0 ±0.5 +1.0 LSb 100 kΩ 8-bit 5.5V, I

-1.5 +0.25 +1.5 LSb 3.0V, IW = 24 µA

-0.8 ±0.5 +0.8 LSb 7-bit 5.5V, IW = 45 µA

-1.125 +0.25 +1.125 LSb 3.0V, IW = 24 µA

Note 1: Resistance is defined as the resistance between terminal A to terminal B.

2: INL and DNL are measured at V

with VA = VDD and VB = VSS.

W

3: MCP4XX1 only. 4: MCP4XX2 only, includes V

WZSE

and V

WFSE

.

5: Resistor terminals A, W and B’s polarity with respect to each other is not restricted. 6: This specification by design. 7: Non-linearity is affected by wiper resistance (R

), which changes significantly over voltage and

W

temperature.

8: The MCP4XX1 is externally connected to match the configura tions of the MCP41X2 and MCP42X2, and

then tested.

9: POR/BOR is not rate dependent. 10: Supply current is independent of current through the resistor network

≤ +125°C (extended)

A

= 5.5V, TA = +25°C.

DD

W

(Note 7)

W

(Note 7)

W

(Note 7)

W

(Note 7)

W

(Note 7)

W

(Note 7)

W

(Note 7)

= 900 µA

= 450 µA

= 90 µA

= 45 µA

MCP414X/416X/424X/426X

AC/DC CHARACTERISTICS (CONTINUED)

Standard Operating Conditions (unless otherwise specified)

Operating Temperature –40°C ≤ T

DC Characteristics

All parameters apply across the specified operating ranges unless noted.

= +2.7V to 5.5V, 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ devices.

V

DD

Typical specifications represent values for V

Parameters Sym Min Typ Max Units Conditions

Rheostat Differential Non-linearity MCP41X1 (Note 4, Note 8) MCP4XX2 devices only

(Note 4)

R-DNL -0.5 ±0.25 +0.5 LSb 5 kΩ 8-bit 5.5V, I

-1.0 +0.5 +1.0 LSb 3.0V (Note 7)

-0.375 ±0.25 +0.375 LSb 7-bit 5.5V, I

-0.75 +0.5 +0.75 LSb 3.0V (Note 7)

-0.5 ±0.25 +0.5 LSb 10 kΩ 8-bit 5.5V, I

-1.0 +0.25 +1.0 LSb 3.0V (Note 7)

-0.375 ±0.25 +0.375 LSb 7-bit 5.5V, I

-0.75 +0.5 +0.75 LSb 3.0V (Note 7)

-0.5 ±0.25 +0.5 LSb 50 kΩ 8-bit 5.5V, I

-0.5 ±0.25 +0.5 LSb 3.0V (Note 7)

-0.375 ±0.25 +0.375 LSb 7-bit 5.5V, I

-0.375 ±0.25 +0.375 LSb 3.0V (Note 7)

-0.5 ±0.25 +0.5 LSb 100kΩ 8-bit 5.5V, I

-0.5 ±0.25 +0.5 LSb 3.0V (Note 7)

-0.375 ±0.25 +0.375 LSb 7-bit 5.5V, I

-0.375 ±0.25 +0.375 LSb 3.0V (Note 7) Capacitance (P Capacitance (P Capacitance (PB)C

)C

A

)CW— 120 — pF f =1 MHz, Code = Full-Scale

w

AW

BW

— 75 — pF f =1 MHz, Code = Full-Scale

Note 1: Resistance is defined as the resistance between terminal A to terminal B.

2: INL and DNL are measured at V

with VA = VDD and VB = VSS.

W

3: MCP4XX1 only. 4: MCP4XX2 only, includes V

WZSE

and V

WFSE

.

5: Resistor terminals A, W and B’s polarity with respect to each other is not restricted. 6: This specification by design. 7: Non-linearity is affected by wiper resistance (R

), which changes significantly over voltage and

W

temperature.

8: The MCP4XX1 is externally connected to match the configura tions of the MCP41X2 and MCP42X2, and

then tested.

9: POR/BOR is not rate dependent. 10: Supply current is independent of current through the resistor network

≤ +125°C (extended)

A

= 5.5V, TA = +25°C.

DD

W

= 900 µA

= 450 µA

= 90 µA

= 45 µA

MCP414X/416X/424X/426X

AC/DC CHARACTERISTICS (CONTINUED)

Standard Operating Conditions (unless otherwise specified)

Operating Temperature –40°C ≤ T

DC Characteristics

All parameters apply across the specified operating ranges unless noted.

= +2.7V to 5.5V, 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ devices.

V

DD

Typical specifications represent values for V

Parameters Sym Min Typ Max Units Conditions

Digital Inputs/Outputs (CS, SDI, SDO, SCK, WP, SHDN)

Schmitt Trigger

V

IH

0.45 V

——V2.7V ≤ VDD ≤ 5.5V

DD

High Input Threshold

——V1.8V ≤ VDD ≤ 2.7V

DD

Schmitt Trigger

0.5 V

DD

V

IL

— — 0.2V Low Input Threshold

Hysteresis of

V

HYS

—0.1VDD—V Schmitt Trigger Inputs

High Voltage Input

V

IHH

8.5 — 12.5

(6)

V Threshold for WiperLock™ Technolog y

Entry Voltage High Voltage Input

Exit Voltage High Voltage Limit V Output Low

Voltage (SDO) Output High

Voltage (SDO) Weak Pull-up /

Pull-down Current

Pull-up /

CS

——V

V

IHH

MAX

V

OL

——12.5

—0.3VDD VIOL = 5 mA, VDD = 5.5V

SS

VSS —0.3VDD VIOL = 1 mA, VDD = 1.8V

0.7VDD —VDD VIOH = -2.5 mA, VDD = 5.5V

V

OH

0.7VDD —VDD VIOL = -1 mA, VDD = 1.8V

I

PU

— — 375 uA Internal VDD pull-up, V

—170—µACS pin, V

R

CS

—16—kΩ V

+

DD

(6)

0.8V

(6)

V Pin can tolerate V

Pull-down Resistance

Input Leakage

I

IL

-1 — 1 µA VIN = VDD and VIN = VSS

Current Pin Capacitance C

, C

IN

OUT

—10—pFf

RAM (Wiper) Value

Value Range N 0h — 1FFh hex 8-bit device

0h — 1FFh hex 7-bit device

Note 1: Resistance is defined as the resistance between terminal A to terminal B.

2: INL and DNL are measured at V

with VA = VDD and VB = VSS.

W

3: MCP4XX1 only. 4: MCP4XX2 only, includes V

WZSE

and V

WFSE

.

5: Resistor terminals A, W and B’s polarity with respect to each other is not restricted. 6: This specification by design. 7: Non-linearity is affected by wiper resistance (R

), which changes significantly over voltage and

W

temperature.

8: The MCP4XX1 is externally connected to match the configura tions of the MCP41X2 and MCP42X2, and

then tested.

9: POR/BOR is not rate dependent. 10: Supply current is independent of current through the resistor network

≤ +125°C (extended)

A

= 5.5V, TA = +25°C.

DD

(Allows 2.7V Digital V 5V Analog VDD)

V

= 5.5V, VCS = 3V

DD

= 20 MHz

C

DD

or less.

MAX

= 5.5V, VCS = 3V

DD

IHH

with

pull-down

MCP414X/416X/424X/426X

AC/DC CHARACTERISTICS (CONTINUED)

Standard Operating Conditions (unless otherwise specified)

Operating Temperature –40°C ≤ T

DC Characteristics

All parameters apply across the specified operating ranges unless noted.

= +2.7V to 5.5V, 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ devices.

V

DD

Typical specifications represent values for V

Parameters Sym Min Typ Max Units Conditions

EEPROM

Endurance E

ndurance

— 1M — Cycles EEPROM Range N 0h — 1FFh hex Initial Factory

Setting EEPROM Pro-

N 80h hex 8-bit WiperLock Technology = Off

40h hex 7-bit WiperLock Technology = Off

—510ms

t

WC

gramming Write Cycle Time

Power Requirements

Power Supply

PSS — 0.0015 0.0035 %/% 8-bit V Sensitivity (MCP41X2 and MCP42X2 only)

— 0.0015 0.0035 %/% 7-bit V

Note 1: Resistance is defined as the resistance between terminal A to terminal B.

2: INL and DNL are measured at V

with VA = VDD and VB = VSS.

W

3: MCP4XX1 only. 4: MCP4XX2 only, includes V

WZSE

and V

WFSE

.

5: Resistor terminals A, W and B’s polarity with respect to each other is not restricted. 6: This specification by design. 7: Non-linearity is affected by wiper resistance (R

), which changes significantly over voltage and

W

temperature.

8: The MCP4XX1 is externally connected to match the configura tions of the MCP41X2 and MCP42X2, and

then tested.

9: POR/BOR is not rate dependent. 10: Supply current is independent of current through the resistor network

≤ +125°C (extended)

A

= 5.5V, TA = +25°C.

DD

= 2.7V to 5.5V,

DD

VA = 2.7V, Code = 80h

= 2.7V to 5.5V,

DD

VA = 2.7V, Code = 40h

MCP414X/416X/424X/426X

CS

SCK

SDO

SDI

70

71

72

73

74

75, 76

77

78

79

80

SDI

MSb LSb

BIT6 - - - - - -1

MSb IN BIT6 - - - -1 LSb IN

83

84

V

IH

V

IL

V

IHH

V

IH

1.1 SPI Mode Timing Waveforms and Requirements

FIGURE 1-1: SPI Timing Waveform (Mode = 11).

TABLE 1-1: SPI REQUIREMENTS (MODE =

# Characteristic Symbol Min Max Units Conditions

SCK Input Frequency F

70 CS

Active (VIL or V

71 SCK input high time TscH 45 — ns VDD = 2.7V to 5.5V

72 SCK input low time TscL 45 — ns V

73 Setup time of SDI input to SCK↑ edge T 74 Hold time of SDI input from SCK↑ edge TscH2 77 CS Inactive (VIH) to SDO output hi-impedance TcsH2DOZ — 50 ns Note 1 80 SDO data output valid after SCK↓ edge TscL2

83 CS

84 Hold time of CS

Inactive (VIH) after SCK↑ edge TscH2csI 100 — ns VDD = 2.7V to 5.5V

CS Active (VIL or V

Note 1: This specification by design.

) to SCK↑ input TcsA2scH 60 — ns

IHH

Inactive (VIH) to

)

IHH

11)

—10MHzVDD = 2.7V to 5.5V

SCK

—1MHzV

500 — ns V

500 — ns VDD = 1.8V to 2.7V

DIV2scH 10 — ns

DIL20—ns

DOV — 70 ns V

1msV

TcsA2csI 50 — ns

170 ns V

DD

DD DD

DD

= 1.8V to 2.7V

= 1.8V to 2.7V = 2.7V to 5.5V

= 2.7V to 5.5V = 1.8V to 2.7V

= 1.8V to 2.7V

MCP414X/416X/424X/426X

CS

SCK

SDO

SDI

70

71 72

82

SDI

74

75, 76

MSb BIT6 - - - - - -1 LSb

77

MSb IN BIT6 - - - -1 LSb IN

80

83

84

73

V

IH

V

IL

V

IHH

V

IH

FIGURE 1-2: SPI Timing Waveform (Mode = 00).

TABLE 1-2: SPI REQUIREMENTS (MODE =

00)

# Characteristic Symbol Min Max Units Conditions

SCK Input Frequency F

—10MHzVDD = 2.7V to 5.5V

SCK

—1MHzVDD = 1.8V to 2.7V

70 CS

Active (VIL or V

71 SCK input high time TscH 45 — ns V

) to SCK↑ input TcsA2scH 60 — ns

IHH

= 2.7V to 5.5V

DD

500 — ns VDD = 1.8V to 2.7V

72 SCK input low time TscL 45 — ns V

500 — ns V

73 Setup time of SDI input to SCK↑ edge T

DIV2scH 10 — ns

= 2.7V to 5.5V

DD

= 1.8V to 2.7V

DD

74 Hold time of SDI input from SCK↑ edge TscH2DIL20—ns 77 CS 80 SDO data output valid after SCK↓ edge TscL2

82 SDO data output valid after

83 CS

84 Hold time of CS

Inactive (VIH) to SDO output hi-impedance TcsH2DOZ — 50 ns Note 1

DOV— 70nsV

170 ns V

= 2.7V to 5.5V

DD

= 1.8V to 2.7V

DD

TssL2doV — 70 ns

Active (VIL or V

CS

IHH

)

Inactive (VIH) after SCK↓ edge TscH2csI 100 — ns VDD = 2.7V to 5.5V

= 1.8V to 2.7V

DD

Active (VIL or V

CS

Inactive (VIH) to

)

IHH

1msV

TcsA2csI 50 — ns

Note 1: This specification by design.

MCP414X/416X/424X/426X

T ABLE 1-3: SPI REQUIREMENTS FOR SDI/SDO MULTIPLEXED (READ OPERATION ONLY)

Characteristic Symbol Min Max Units Conditions

SCK Input Frequency F

Active (VIL or V

CS SCK input high time TscH 1.8 — us SCK input low time TscL 1.8 — ns Setup time of SDI input to SCK↑ edge T Hold time of SDI input from SCK↑ edge TscH2 CS Inactive (VIH) to SDO output hi-impedance TcsH2DOZ — 50 ns Note 1 SDO data output valid after SCK↓ edge TscL2 SDO data output valid after

Active (VIL or V

CS

Inactive (VIH) after SCK↓ edge TscH2csI 100 — ns

CS Hold time of CS Inactive (VIH) to

Active (VIL or V

CS

Note 1: This specification by design

2: This table is for the devices where the SPI’s SDI and SDO pins are multiplexed (SDI/SDO) and a Read

command is issued. This is NOT required for SDI/SDO operation with the Increment, Decrement, or Write commands. This data rate can be increased by having external pull-up resistors to increase the rising edges of each bit.

) to SCK↑ input TcsA2scH 60 — ns

IHH

TssL2doV — 50 ns

)

IHH

)

IHH

—250kHzVDD = 2.7V to 5.5V

SCK

DIV2scH 40 — ns

DIL40—ns

DOV—1.6us

TcsA2csI 50 — ns

(2)

MCP414X/416X/424X/426X

TEMPERATURE CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, VDD= +2.7V to +5.5V, VSS=GND.

Parameters Sym Min Typ Max Units Conditions

Temperature Ranges

Specified Temperature Range T Operating Temperature Range T Storage Temperature Range T

Thermal Package Resistances

Thermal Resistance, 8L-PDIP θ Thermal Resistance, 8L-SOIC θ Thermal Resistance, 8L-MSOP θ Thermal Resistance, 8L-DFN (3x3) θ Thermal Resistance, 10L-PDIP θ Thermal Resistance, 10L-MSOP θ Thermal Resistance, 14L-PDIP θ Thermal Resistance, 14L-SOIC θ Thermal Resistance, 14L-MSOP θ Thermal Resistance, 16L-QFN θ

A A A

JA JA JA JA JA JA JA JA JA JA

-40 — +125 °C

-65 — +150 °C

— 84.6 — °C/W — 145.5 — °C/W —211—°C/W — 68.5 — °C/W —82—°C/W —202—°C/W —70—°C/W —85—°C/W —N/A—°C/W —50—°C/W

MCP414X/416X/424X/426X

0

50

100

150

200

250

300

350

400

450

500

550

600

650

0.00 2.00 4.00 6.00 8.00 10.00 12.00 f

SCK

(MHz)

Operating Current (I

DD

) (µA)

2.7V -40°C

2.7V 25°C

2.7V 85°C

2.7V 125°C

5.5V -40°C

5.5V 25°C

5.5V 85°C

5.5V 125°C

0.0

0.5

1.0

1.5

2.0

2.5

3.0

-40 25 85 125 Ambient Temperature (°C)

Standby Current (Istby) (µA)

5.5V

2.7V

300.0

400.0

500.0

600.0

700.0

800.0

900.0

-40 25 85 125 Ambient Temperature (°C)

EE Write Current (Iwrite) (µA)

5.5V

0

50

100

150

200

250

2345678910

V

CS

(V)

R

CS

(kOhms)

-1000

-800

-600

-400

-200

0

200

400

600

800

1000

I

CS

(µA)

I

CS

R

CS

0

2

4

6

8

10

12

-40-200 20406080100120

Ambient Temperature (°C)

CS V

PP

Threshold (V)

2.7V Exit

5.5V Exit

2.7V Entry

5.5V Entry

2.0 TYPICAL PERFORMANCE CURVES

Note: The graphs and tables provided following this note are a statistical summary based on a limited number of

samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.

FIGURE 2-1: Device Current (IDD) vs. SPI Frequency (f (V

= 2.7V and 5.5V).

DD

FIGURE 2-2: Device Current (I V

. (CS = VDD) vs. Ambient Temperature.

DD

) and Ambient Temperature

SCK

SHDN

) and

FIGURE 2-4: CS Resistance (R Voltage (V

) and Current (ICS) vs. CS Input

CS

) (V

CS

DD

FIGURE 2-5: CS

Pull-up/Pull-down

= 5.5V).

High Input Entry/Exit

Threshold vs. Ambient Temperature and V

DD

.

FIGURE 2-3: Write Current (I Ambient Temperature and V

) vs.

WRITE

.

DD

MCP414X/416X/424X/426X

20

60

100

140

180

220

260

300

0 32 64 96 128 160 192 224 256

Wiper Setting (decimal)

Wiper Resistance (R

W

(ohms)

-0.3

-0.2

-0.1

0

0.1

0.2

0.3

Error (LSb)

-40C Rw 25C Rw 85C Rw 125C Rw

-40C INL 25C INL 85C INL 125C INL

-40C DNL 25C DNL 85C DNL 125C DNL

INL

DNL

-40°C

25°C

85°C

R

W

125°C

20

40

60

80

100

120

0 32 64 96 128 160 192 224 256

Wiper Setting (decimal)

Wiper Resistance (R

W

(ohms)

-0.3

-0.2

-0.1

0

0.1

0.2

0.3

Error (LSb)

-40C Rw 25C Rw 85C Rw 125C Rw

-40C INL 25C INL 85C INL 125C INL

-40C DNL 25C DNL 85C DNL 125C DNL

INL

DNL

R

W

-40°C 25°C

85°C

125°C

5050

5100

5150

5200

5250

5300

-40 0 40 80 120

Ambient Temperature (°C)

Nominal Resistance (R

AB

(Ohms)

2.7V

5.5V

20

60

100

140

180

220

260

300

0 32 64 96 128 160 192 224 256

Wiper Setting (decimal)

Wiper Resistance (R

W

(ohms)

-2

0

2

4

6

Error (LSb)

-40C Rw 25C Rw 85C Rw 125C Rw

-40C INL 25C INL 85C INL 125C INL

-40C DNL 25C DNL 85C DNL 125C DNL

INL

DNL

R

W

-40°C

25°C

85°C125°C

20

40

60

80

100

120

0 32 64 96 128 160 192 224 256

Wiper Setting (decimal)

Wiper Resistance (R

W

(ohms)

-1.25

-0.75

-0.25

0.25

0.75

1.25

Error (LSb)

-40C Rw 25C Rw 85C Rw 125C Rw

-40C INL 25C INL 85C INL 125C INL

-40C DNL 25C DNL 85C DNL 125C DNL

INL

DNL

R

-40°C

25°C

85°C

125°C

0

1000

2000

3000

4000

5000

6000

0 32 64 96 128 160 192 224 256

Wiper Setting (decimal)

R

WB

(Ohms)

-40°C 25°C 85°C 125°C

Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.

)

FIGURE 2-6: 5kΩ Pot Mode – RW (Ω), INL (LSb), DNL (LSb) vs. Wiper Setting and Ambient Temperature (V

)

= 5.5V).

DD

)

FIGURE 2-9: 5k

Ω

Rheo Mode – RW (Ω), INL (LSb), DNL (LSb) vs. Wiper Setting and Ambient Temperature (V

)

= 5.5V).

DD

W

FIGURE 2-7: 5k INL (LSb), DNL (LSb) vs. Wiper Setting and Ambient Temperature (V

)

FIGURE 2-8: 5k (

Ω

) vs. Ambient Temperature and VDD.

Ω

Pot Mode – RW (Ω),

= 3.0V).

DD

Ω

– Nominal Resistance

Ω

FIGURE 2-10: 5k

Rheo Mode – RW (Ω), INL (LSb), DNL (LSb) vs. Wiper Setting and Ambient Temperature (V

FIGURE 2-11: 5k

= 3.0V).

DD

Ω

– RWB (Ω) vs. Wiper Setting and Ambient Temperature.

MCP414X/416X/424X/426X

Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.

FIGURE 2-12: 5kΩ – Low-Voltage Decrement Wiper Settling Time (V (1 µs/Div).

Ω

FIGURE 2-13: 5k Decrement Wiper Settling Time (V (1 µs/Div).

– Low-Voltage

= 2.7V)

DD

= 5.5V)

DD

FIGURE 2-15: 5k Increment Wiper Settling Time (V (1 µs/Div).

FIGURE 2-16: 5k Increment Wiper Settling Time (V (1 µs/Div).

Ω

– Low-Voltage

Ω

– Low-Voltage

= 2.7V)

DD

= 5.5V)

DD

Ω

FIGURE 2-14: 5k Response Time (20 ms/Div).

– Power-Up Wiper

MCP414X/416X/424X/426X

20

40

60

80

100

120

0 25 50 75 100 125 150 175 200 225 250

Wiper Setting (decimal)

Wiper Resistance (R

W

(ohms)

-0.3

-0.2

-0.1

0

0.1

0.2

0.3

Error (LSb)

-40C Rw 25C Rw 85C Rw 125C Rw

-40C INL 25C INL 85C INL 125C INL

-40C DNL 25C DNL 85C DNL 125C DNL

INL

DNL

R

W

-40°C

25°C

85°C

125°C

20

60

100

140

180

220

260

300

0 32 64 96 128 160 192 224 256

Wiper Setting (decimal)

Wiper Resistance (R

W

(ohms)

-0.3

-0.2

-0.1

0

0.1

0.2

0.3

Error (LSb)

-40C Rw 25C Rw 85C Rw 125C Rw

-40C INL 25C INL 85C INL 125C INL

-40C DNL 25C DNL 85C DNL 125C DNL

INL

DNL

R

W

-40°C

25°C

85°C

125°C

10000

10050

10100

10150

10200

10250

-40 0 40 80 120

Ambient Temperature (°C)

Nominal Resistance (R

AB

(Ohms)

5.5V

2.7V

20

40

60

80

100

120

0 32 64 96 128 160 192 224 256

Wiper Setting (decimal)

Wiper Resistance (R

W

(ohms)

-1

-0.5

0

0.5

1

Error (LSb)

-40C Rw 25C Rw 85C Rw 125C Rw

-40C INL 25C INL 85C INL 125C INL

-40C DNL 25C DNL 85C DNL 125C DNL

INL

DNL

R

W

-40°C

25°C85°C

125°C

20

60

100

140

180

220

260

300

0 25 50 75 100125150175200225250

Wiper Setting (decimal)

Wiper Resistance (R

W

(ohms)

-2

-1

0

1

2

3

4

Error (LSb)

-40C Rw 25C Rw 85C Rw 125C Rw

-40C INL 25C INL 85C INL 125C INL

-40C DNL 25C DNL 85C DNL 125C DNL

INL

DNL R

W

-40°C

25°C85°C

125°C

0

2000

4000

6000

8000

10000

12000

0 32 64 96 128 160 192 224 256

Wiper Setting (decimal)

R

WB

(Ohms)

-40°C 25°C 85°C 125°C

Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.

)

FIGURE 2-17: 10 kΩ Pot Mode – RW (Ω), INL (LSb), DNL (LSb) vs. Wiper Setting and Ambient Temperature (V

)

= 5.5V).

DD

)

FIGURE 2-20: 10 k

Ω

Rheo Mode – RW (Ω), INL (LSb), DNL (LSb) vs. Wiper Setting and Ambient Temperature (V

)

= 5.5V).

DD

FIGURE 2-18: 10 k INL (LSb), DNL (LSb) vs. Wiper Setting and Ambient Temperature (V

)

FIGURE 2-19: 10 k (

Ω

) vs. Ambient Temperature and VDD.

Ω

Pot Mode – RW (Ω),

FIGURE 2-21: 10 k

Ω

Rheo Mode – RW (Ω), INL (LSb), DNL (LSb) vs. Wiper Setting and

= 3.0V).

DD

Ω

– Nominal Resistance

Ambient Temperature (V

FIGURE 2-22: 10 k

= 3.0V).

DD

Ω

– RWB (Ω) vs. Wiper Setting and Ambient Temperature.

MCP414X/416X/424X/426X

Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.

FIGURE 2-23: 10 kΩ – Low-Voltage Decrement Wiper Settling Time (V (1 µs/Div).

Ω

FIGURE 2-24: 10 k Decrement Wiper Settling Time (V (1 µs/Div).

– Low-Voltage

= 2.7V)

DD

= 5.5V)

DD

FIGURE 2-25: 10 k Increment Wiper Settling Time (V (1 µs/Div).

FIGURE 2-26: 10 k Increment Wiper Settling Time (V (1 µs/Div).

Ω

– Low-Voltage

Ω

– Low-Voltage

= 2.7V)

DD

= 5.5V)

DD

MCP414X/416X/424X/426X

20

40

60

80

100

120

0 32 64 96 128 160 192 224 256

Wiper Setting (decimal)

Wiper Resistance (R

W

)

(ohms)

-0.3

-0.2

-0.1

0

0.1

0.2

0.3

Error (LSb)

-40C Rw 25C Rw 85C Rw 125C Rw

-40C INL 25C INL 85C INL 125C INL

-40C DNL 25C DNL 85C DNL 125C DNL

INL

DNL

R

W

-40°C

25°C

85°C

125°C

20

60

100

140

180

220

260

300

0 32 64 96 128 160 192 224 256

Wiper Setting (decimal)

Wiper Resistance (R

W

)

(ohms)

-0.3

-0.2

-0.1

0

0.1

0.2

0.3

Error (LSb)

-40C Rw 25C Rw 85C Rw 125C Rw

-40C INL 25C INL 85C INL 125C INL

-40C DNL 25C DNL 85C DNL 125C DNL

INL

DNL

R

W

-40°C

25°C

85°C

125°C

49400

49600

49800

50000

50200

50400

50600

50800

-40 0 40 80 120

Ambient Temperature (°C)

Nominal Resistance (R

AB

(Ohms)

2.7V

5.5V

20

40

60

80

100

120

0 32 64 96 128 160 192 224 256

Wiper Setting (decimal)

Wiper Resistance (R

W

)

(ohms)

-0.3

-0.2

-0.1

0

0.1

0.2

0.3

Error (LSb)

-40C Rw 25C Rw 85C Rw 125C Rw

-40C INL 25C INL 85C INL 125C INL

-40C DNL 25C DNL 85C DNL 125C DNL

INL

DNL

R

W

-40°C

25°C

85°C

125°C

20

60

100

140

180

220

260

300

0 32 64 96 128 160 192 224 256

Wiper Setting (decimal)

Wiper Resistance (R

W

(ohms)

-1

-0.75

-0.5

-0.25

0

0.25

0.5

0.75

1

Error (LSb)

-40C Rw 25C Rw 85C Rw 125C Rw

-40C INL 25C INL 85C INL 125C INL

-40C DNL 25C DNL 85C DNL 125C DNL

INL

DNL

R

W

-40°C

25°C

85°C

125°C

0

10000

20000

30000

40000

50000

60000

0 32 64 96 128 160 192 224 256

Wiper Setting (decimal)

R

WB

(Ohms)

-40°C 25°C 85°C 125°C

Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.

FIGURE 2-27: 50 kΩ Pot Mode – RW (Ω), INL (LSb), DNL (LSb) vs. Wiper Setting and Ambient Temperature (V

FIGURE 2-28: 50 k

= 5.5V).

DD

Ω

Pot Mode – RW (Ω), INL (LSb), DNL (LSb) vs. Wiper Setting and Ambient Temperature (V

)

= 3.0V).

DD

FIGURE 2-30: 50 k

Ω

Rheo Mode – RW (Ω), INL (LSb), DNL (LSb) vs. Wiper Setting and Ambient Temperature (V

)

FIGURE 2-31: 50 k

= 5.5V).

DD

Ω

Rheo Mode – RW (Ω), INL (LSb), DNL (LSb) vs. Wiper Setting and Ambient Temperature (V

= 3.0V).

DD

FIGURE 2-29: 50 k (

Ω

) vs. Ambient Temperature and VDD.

Ω

– Nominal Resistance

FIGURE 2-32: 50 k

Ω

– RWB (Ω) vs. Wiper Setting and Ambient Temperature.

MCP414X/416X/424X/426X

Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.

FIGURE 2-33: 50 kΩ – Low-Voltage Decrement Wiper Settling Time (V (1 µs/Div).

Ω

FIGURE 2-34: 50 k Decrement Wiper Settling Time (V (1 µs/Div).

– Low-Voltage

= 2.7V)

DD

= 5.5V)

DD

FIGURE 2-35: 50 k Increment Wiper Settling Time (V (1 µs/Div).

FIGURE 2-36: 50 k Increment Wiper Settling Time (V (1 µs/Div).

Ω

– Low-Voltage

Ω

– Low-Voltage

DD

= 2.7V)

= 5.5V)

MCP414X/416X/424X/426X

20

40

60

80

100

120

0 32 64 96 128 160 192 224 256

Wiper Setting (decimal)

Wiper Resistance (R

W

(ohms)

-0.2

-0.1

0

0.1

0.2

Error (LSb)

-40C Rw 25C Rw 85C Rw 125C Rw

-40C INL 25C INL 85C INL 125C INL

-40C DNL 25C DNL 85C DNL 125C DNL

INL

DNL

R

W

-40°C

25°C

85°C

125°C

20

60

100

140

180

220

260

300

0 32 64 96 128 160 192 224 256

Wiper Setting (decimal)

Wiper Resistance (R

W

(ohms)

-0.2

-0.15

-0.1

-0.05

0

0.05

0.1

0.15

0.2

Error (LSb)

-40C Rw 25C Rw 85C Rw 125C Rw

-40C INL 25C INL 85C INL 125C INL

-40C DNL 25C DNL 85C DNL 125C DNL

INL

DNL

R

W

-40°C

25°C

85°C

125°C

99000

99500

100000

100500

101000

101500

-40 0 40 80 120 Ambient Temperature (°C)

Nominal Resistance (R

AB

(Ohms)

5.5V

2.7V

20

40

60

80

100

120

0 32 64 96 128 160 192 224 256

Wiper Setting (decimal)

Wiper Resistance (R

W

(ohms)

-0.3

-0.2

-0.1

0

0.1

0.2

0.3

Error (LSb)

-40C Rw 25C Rw 85C Rw 125C Rw

-40C INL 25C INL 85C INL 125C INL

-40C DNL 25C DNL 85C DNL 125C DNL

INL

DNL

R

W

-40°C

25°C85°C

125°C

20

60

100

140

180

220

260

300

0 32 64 96 128 160 192 224 256

Wiper Setting (decimal)

Wiper Resistance (Rw)

(ohms)

-0.6

-0.4

-0.2

0

0.2

0.4

0.6

Error (LSb)

-40C Rw 25C Rw 85C Rw 125C Rw

-40C INL 25C IN L 85C INL 125C INL

-40C DNL 25C DNL 85C DNL 125C DNL

INL

DNL

R

W

-40°C

25°C85°C

125°C

0

20000

40000

60000

80000

100000

120000

0 32 64 96 128 160 192 224 256

Wiper Setting (decimal)

Rwb (Ohms)

-40°C 25°C 85°C 125°C

Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.

)

FIGURE 2-37: 100 kΩ Pot Mode – RW (Ω), INL (LSb), DNL (LSb) vs. Wiper Setting and Ambient Temperature (V

)

= 5.5V).

DD

)

FIGURE 2-40: 100 k (

Ω

), INL (LSb), DNL (LSb) vs. Wiper Setting and

Ambient Temperature (V

Ω

Rheo Mode – RW

= 5.5V).

DD

FIGURE 2-38: 100 k INL (LSb), DNL (LSb) vs. Wiper Setting and Ambient Temperature (V

)

FIGURE 2-39: 100 k Resistance ( V

.

DD

Ω

Pot Mode – RW (Ω),

= 3.0V).

DD

Ω

– Nominal

) vs. Ambient Temperature and

Ω

FIGURE 2-41: 100 k (

Ω

), INL (LSb), DNL (LSb) vs. Wiper Setting and

Ambient Temperature (V

FIGURE 2-42: 100 k

Rheo Mode – RW

= 3.0V).

DD

Ω

– RWB (Ω) vs. Wiper

Setting and Ambient Temperature.

MCP414X/416X/424X/426X

Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.

M

FIGURE 2-43: 100 kΩ – Low-Voltage Decrement Wiper Settling Time (V

= 2.7V)

DD

(1 µs/Div).

Ω

FIGURE 2-44: 100 k Decrement Wiper Settling Time (V

– Low-Voltage

= 5.5V)

DD

(1 µs/Div).

FIGURE 2-45: 100 kΩ – Power-Up Wiper Response Time (1 µs/Div).

FIGURE 2-46: 100 k Increment Wiper Settling Time (V

Ω

– Low-Voltage

= 2.7V)

DD

(1 µs/Div).

MCP414X/416X/424X/426X

0

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

0.09

0.1

-40 0 40 80 120 Temperature (°C)

%

5.5V

3.0V

-0.04

-0.03

-0.02

-0.01

0

0.01

0.02

0.03

0.04

-40 0 40 80 120 Temperature (°C)

%

5.5V

3.0V

0

0.02

0.04

0.06

0.08

0.1

0.12

-40 0 40 80 120

Temperature (°C)

%

5.5V

3.0V

-0.03

-0.02

-0.01

0

0.01

0.02

0.03

0.04

0.05

-40 10 60 110

Temperature (°C)

%

5.5V

3.0V

Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.

FIGURE 2-47: Resistor Network 0 to Resistor Network 1 R

(5 kΩ) Mismatch vs. VDD

AB

and Temperature.

FIGURE 2-48: Resistor Network 0 to Resistor Network 1 R V

and Temperature.

DD

(10 kΩ) Mismatch vs.

AB

FIGURE 2-49: Resistor Network 0 to Resistor Network 1 R V

and Temperature.

DD

(50 kΩ) Mismatch vs.

AB

FIGURE 2-50: Resistor Network 0 to Resistor Network 1 R V

and Temperature.

DD

(100 kΩ) Mismatch vs.

AB

MCP414X/416X/424X/426X

1

1.2

1.4

1.6

1.8

2

2.2

2.4

-40 0 40 80 120 Temperature (°C)

V

IH

(V)

5.5V

2.7V

0.6

0.7

0.8

0.9

1

1.1

1.2

1.3

1.4

-40 0 40 80 120

Temperature (°C)

V

IL

(V)

5.5V

2.7V

-45

-40

-35

-30

-25

-20

-15

-10

-5

0

-40 0 40 80 120

Temperature (°C)

I

OH

(mA)

5.5V

2.7V

0

5

10

15

20

25

30

35

40

45

50

-40 0 40 80 120 Temperature (°C)

I

OL

(mA)

5.5V

2.7V

Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.

FIGURE 2-51: VIH (SDI, SCK, CS, WP, and SHDN

) vs. VDD and Temperature.

FIGURE 2-52: V SHDN

) vs. VDD and Temperature.

(SDI, SCK, CS, WP, and

IL

FIGURE 2-53: I Temperature.

FIGURE 2-54: I Temperature.

(SDO) vs. VDD and

OH

(SDO) vs. VDD and

OL

MCP414X/416X/424X/426X

3.0

3.2

3.4

3.6

3.8

4.0

4.2

-40 0 40 80 120 Temperature (°C)

t

WC

(ms)

0

0.2

0.4

0.6

0.8

1

1.2

-40 0 40 80 120 Temperature (°C)

V

DD

(V)

2.7V

5.5V

12.0

12.5

13.0

13.5

14.0

14.5

15.0

-40 0 40 80 120 Temperature (°C)

fsck (MHz)

2.7V

5.5V

+

-

V

OUT

2.5V DC

+5V

A

B

W

Offset GND

V

IN

Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.

FIGURE 2-55: Nominal EEPROM Write Cycle Time vs. V

and Temperature.

DD

2.1 Test Circuits

FIGURE 2-58: -3 db Gain vs. Frequency Test.

FIGURE 2-56: POR/BOR T rip point vs. V and Temperature.

FIGURE 2-57: SCK Input Frequency vs. Voltage and Temperature.

DD

MICROCHIP MCP414X, MCP416X, MCP424X, MCP426X Technical data

Specifications and Main Features

Frequently Asked Questions

User Manual

1.0 ELECTRICAL CHARACTERISTICS

2.0 TYPICAL PERFORMANCE CURVES