MICROCHIP MCP413X, MCP415X, MCP423X, MCP425X Technical data

MCP413X/415X/423X/425X
1 2 3 4
5
6
7
8
P0W
P0B
P0A
V
SS
V
DD
MCP41X1
Single Potentiometer
PDIP, SOIC, MSOP,
CS
SDI/SDO
SCK
1 2 3 4
5
6
7
8
P0B
SDO
P0W
V
DD
MCP41X2
Single Rheostat
PDIP, SOIC, MSOP,
1 2 3 4
11
12
13
14
SHDN
SDO
NC
V
DD
MCP42X1 Dual Potentiometers
PDIP, SOIC, TSSOP
5 6 7
8
9
10
P0W
P0B
P0A
P1A
P1W
P1B
V
SS
CS
SDI
SCK
V
SS
CS
SDI
SCK
1
2
3
4
11
12
13
14
SDO
SHDN
4x4 QFN
5
6
78
9
10
P0B
NC
P0W
P0A
P1A
P1W
V
SS
SCK
V
SS
SDI
15
16
P1B
V
DD
CS
NC
1 2 3 4
7
8
9
10
SDO
V
DD
MCP42X2 Dual Rheostat
MSOP, DFN
5
6
P0B P0W P1W
P1B
V
SS
CS
SDI
SCK
3x3 DFN
3x3 DFN
7/8-Bit Single/Dual SPI Digital POT with Volatile Memory
Features
• Single or Dual Resistor Network options
• Potentiometer or Rheostat configuration options
• Resistor Network Resolution
- 7-bit: 128 Resistors (129 Steps)
- 8-bit: 256 Resistors (257 Steps) Resistances options of:
•R
-5kΩ
-10kΩ
-50kΩ
- 100 kΩ
• Zero Scale to Full Scale Wiper operation
• Low Wiper Resistance: 75Ω (typ.)
• Low Tempco:
- Absolute (Rheostat): 50 ppm typical
(0°C to 70°C)
- Ratiometric (Potentiometer): 15 ppm typical
• SPI Serial Interface (10 MHz, modes 0,0 & 1,1)
- High-Speed Read/Writes to wiper registers
- SDI/SDO multiplexing (MCP41X1 only)
• Resistor Network Terminal Disconnect Feature via:
- Shutdown pin (SHDN
- Terminal Control (TCON) Register
• Brown-out reset protection (1.5V typical)
• Serial Interface Inactive current (2.5 uA typ.)
• High-Voltage Tolerant Digital Inputs: Up to 12.5V
• Supports Split Rail Applications
• Internal weak pull-up on all digital inputs
• Wide Operating Voltage:
- 2.7V to 5.5V - Device Characteristics
Specified
- 1.8V to 5.5V - Device Operation
• Wide Bandwidth (-3 dB) Operation:
- 2 MHz (typ.) for 5.0 kΩ device
• Extended temperature range (-40°C to +125°C)
)
Description
The MCP41XX and MCP42XX devices offer a wide range of product offerings using an SPI interface. This family of devices support 7-bit and 8-bit resistor networks, and Potentiometer and Rheostat pinouts.
Package Types
© 2007 Microchip Technology Inc. DS22060A-page 1
MCP413X/415X/423X/425X
Power-up/ Brown-out Control
VDD
V
SPI Serial Interface Module & Control Logic (WiperLock™ Technology)
Resistor Network 0
(Pot 0)
Wiper 0 & TCON Register
Resistor Network 1
(Pot 1)
Wiper 1 & TCON Register
CS
SCK
SDI
SDO
NC
SHDN
Memory (4x9)
Wiper0 Wiper1
TCON STATUS
P0A
P0W
P0B
P1A
P1W
P1B
For Dual Resistor Network Devices Only
For Dual Potentiometer Devices Only
Device Block Diagram
Device Features
Resistance (typical)
Device
MCP4131
MCP4132
(3)
1 Potentiometer
(3)
1 Rheostat SPI RAM No Mid-Scale 5.0, 10.0, 50.0, 100.0 75 129 1.8V to 5.5V
MCP4141 1 Potentiometer
Wiper
Configuration
# of POTs
Typ e
Memory
Control
Interface
(1)
SPI RAM No Mid-Scale 5.0, 10.0, 50.0, 100.0 75 129 1.8V to 5.5V
(1)
SPI EE Ye s NV Wiper 5.0, 10.0, 50.0, 100.0 75 129 2.7V to 5.5V
WiperLock
Technology
POR Wiper
R
Setting
Options (kΩ)
AB
MCP4142 1 Rheostat SPI EE Ye s NV Wiper 5.0, 10.0, 50.0, 100.0 75 129 2.7V to 5.5V
(3)
MCP4151
MCP4152
1 Potentiometer
(3)
1 Rheostat SPI RAM No Mid-Scale 5.0, 10.0, 50.0, 100.0 75 257 1.8V to 5.5V
MCP4161 1 Potentiometer
(1)
SPI RAM No Mid-Scale 5.0, 10.0, 50.0, 100.0 75 257 1.8V to 5.5V
(1)
SPI EE Ye s NV Wiper 5.0, 10.0, 50.0, 100.0 75 257 2.7V to 5.5V
MCP4162 1 Rheostat SPI EE Ye s NV Wiper 5.0, 10.0, 50.0, 100.0 75 257 2.7V to 5.5V
MCP4231
MCP4232
2 Potentiometer
(3)
2 Rheostat SPI RAM No Mid-Scale 5.0, 10.0, 50.0, 100.0 75 129 1.8V to 5.5V
(3)
MCP4241 2 Potentiometer
MCP4242 2 Rheostat SPI EE Ye s NV Wiper 5.0, 10.0, 50.0, 100.0 75 129 2.7V to 5.5V
MCP4251
MCP4252
MCP4261 2 Potentiometer
MCP4262 2 Rheostat SPI EE Ye s NV Wiper 5.0, 10.0, 50.0, 100.0 75 257 2.7V to 5.5V
Note 1: Floating either terminal (A or B) allows the device to be used as a Rheostat (variable resistor).
(3)
2 Potentiometer
(3)
2 Rheostat SPI RAM No Mid-Scale 5.0, 10.0, 50.0, 100.0 75 257 1.8V to 5.5V
2: Analog characteristics only tested from 2.7V to 5.5V unless otherwise noted. 3: Please check Microchip web site for device release and availability.
(1)
SPI RAM No Mid-Scale 5.0, 10.0, 50.0, 100.0 75 129 1.8V to 5.5V
(1)
SPI EE Ye s NV Wiper 5.0, 10.0, 50.0, 100.0 75 129 2.7V to 5.5V
(1)
SPI RAM No Mid-Scale 5.0, 10.0, 50.0, 100.0 75 257 1.8V to 5.5V
(1)
SPI EE Ye s NV Wiper 5.0, 10.0, 50.0, 100.0 75 257 2.7V to 5.5V
DS22060A-page 2 © 2007 Microchip Technology Inc.
Wiper
- RW
(Ω)
# of Steps
VDD
Operating
Range
(2)
MCP413X/415X/423X/425X
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Voltage on VDD with respect to VSS............... -0.6V to +7.0V
Voltage on CS SHDN Voltage on all other pins (PxA, PxW, PxB, and SDO) with respect to V Input clamp current, I (V
< 0, VI > VDD, VI > VPP ON HV pins) ......................±20 mA
I
Output clamp current, I (V
< 0 or VO > VDD) ..................................................±20 mA
O
Maximum output current sunk by any Output pin
......................................................................................25 mA
Maximum output current sourced by any Output pin
......................................................................................25 mA
Maximum current out of V Maximum current into V Maximum current into P
Storage temperature ....................................-65°C to +150°C
Ambient temperature with power applied
-40°C to +125°C
Total power dissipation (Note 1) ................................400 mW
Soldering temperature of leads (10 seconds) ............. +300°C
ESD protection on all pins .................................. ≥ 4 kV (HBM),
.......................................................................... 300V (MM)
Maximum Junction Temperature (T
Note 1: Power dissipation is calculated as follows:
, SCK, SDI, SDI/SDO, and
with respect to VSS
SS ............................
IK
OK
DD
XA, PXW & PXB pins ............±2.5 mA
Pdis = VDD x {IDD - ∑ IOH} + ∑ {(VDD-VOH) x IOH} + ∑(VOl x IOL)
......................................
pin .................................100 mA
SS
pin ....................................100 mA
) ......................... +150°C
J
-0.6V to 12.5V
-0.3V to VDD + 0.3V
† Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.
© 2007 Microchip Technology Inc. DS22060A-page 3
MCP413X/415X/423X/425X
AC/DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise specified)
Operating Temperature –40°C ≤ T
DC Characteristics
All parameters apply across the specified operating ranges unless noted.
= +2.7V to 5.5V, 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ devices.
V
DD
Typical specifications represent values for V
Parameters Sym Min Typ Max Units Conditions
Supply Voltage V
DD
2.7 5.5 V
1.8 2.7 V Serial Interface only.
, SDI, SDO,
CS
HDN pin
SCK, S Voltage Range
V
V
HV
VSS —VDD +
12.5V V VDD
8.0V
DD Start Voltage
V
V
1.65 V RAM retention voltage (V
BOR
to ensure Wiper Reset
DD Rise Rate to
V
V
(Note 9)V/ms
DDRR
ensure Power-on Reset
Delay after device
T
BORD
—102s exits the reset state (VDD > V
Supply Current
BOR
)
450 µA Serial Interface Active,
I
DD
(Note 10)
2.5 5 µA Serial Interface Inactive,
0.55 1 mA Serial Interface Active,
Note 1: Resistance is defined as the resistance between terminal A to terminal B.
2: INL and DNL are measured at V
with VA = VDD and VB = VSS.
W
3: MCP4XX1 only. 4: MCP4XX2 only, includes V
WZSE
and V
WFSE
.
5: Resistor terminals A, W and B’s polarity with respect to each other is not restricted. 6: This specification by design. 7: Non-linearity is affected by wiper resistance (R
), which changes significantly over voltage and
W
temperature.
8: The MCP4XX1 is externally connected to match the configurations of the MCP41X2 and MCP42X2, and
then tested.
9: POR/BOR is not rate dependent. 10: Supply current is independent of current through the resistor network.
+125°C (extended)
A
= 5.5V, TA = +25°C.
DD
The CS pin will be at one
4.5V
VVDD <
of three input levels
, VIH or V
(V
IL
IHH
4.5V
= 5.5V, CS = VIL, SCK @ 5 MHz,
V
DD
write all 0’s to volatile Wiper 0 (address 0h)
= VIH, VDD = 5.5V
CS
= 5.5V, CS = V
V
DD
IHH
, SCK @ 5 MHz, decrement volatile Wiper 0 (address 0h)
). (Note 6)
) < V
RAM
BOR
DS22060A-page 4 © 2007 Microchip Technology Inc.
MCP413X/415X/423X/425X
AC/DC CHARACTERISTICS (CONTINUED)
Standard Operating Conditions (unless otherwise specified)
Operating Temperature –40°C ≤ T
DC Characteristics
All parameters apply across the specified operating ranges unless noted.
= +2.7V to 5.5V, 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ devices.
V
DD
Typical specifications represent values for V
Parameters Sym Min Typ Max Units Conditions
Resistance (± 20%)
R
4.0 5 6.0 kΩ -502 devices (Note 1)
8.0 10 12.0 kΩ -103 devices (Note 1)
40.0 50 60.0 kΩ -503 devices (Note 1)
80.0 100 120.0 kΩ -104 devices (Note 1)
Resolution N 257 Taps 8-bit No Missing Codes
129 Taps 7-bit No Missing Codes
Step Resistance R
—RAB /
S
Ω 8-bit Note 6
(256)
/
—R
AB
Ω 7-bit Note 6
(128)
Nominal Resistance Match
Wiper Resistance (Note 3, Note 4)
Nominal Resistance Te mp c o
Ratiometeric
|R
|R
- R
AB0
AB1
/ R
- R
BW0
BW1
/ R
BW
R
W
/ΔT 50 ppm/°C TA = -20°C to +70°C
ΔR
AB
/ΔT 15 ppm/°C Code = Midscale (80h or 40h)
ΔV
WB
0.2 1.25 % MCP42X1 devices only
|
—0.251.5 %MCP42X2 devices only,
|
75 160 Ω VDD = 5.5 V, IW = 2.0 mA, code = 00h — 75 300 Ω VDD = 2.7 V, IW = 2.0 mA, code = 00h
100 ppm/°C T
150 ppm/°C T
Te mp c o
Resistor Terminal
V
A,VW,VB
Vss V
DD
Input Voltage Range (Terminals A, B and W)
Maximum current
I
W
——2.5mANote 6, Worst case current through
through A, W or B
Leakage current into A, W or B
I
WL
—100— nAMCP4XX1 PxA = PxW = PxB = V
—100— nAMCP4XX2 PxB = PxW = VSS
Note 1: Resistance is defined as the resistance between terminal A to terminal B.
2: INL and DNL are measured at VW with VA = VDD and VB = VSS. 3: MCP4XX1 only. 4: MCP4XX2 only, includes V
WZSE
and V
WFSE
.
5: Resistor terminals A, W and B’s polarity with respect to each other is not restricted. 6: This specification by design. 7: Non-linearity is affected by wiper resistance (R
), which changes significantly over voltage and
W
temperature.
8: The MCP4XX1 is externally connected to match the configurations of the MCP41X2 and MCP42X2, and
then tested.
9: POR/BOR is not rate dependent. 10: Supply current is independent of current through the resistor network.
+125°C (extended)
A
= 5.5V, TA = +25°C.
DD
Code = Full-Scale
= -40°C to +85°C
A
= -40°C to +125°C
A
V Note 5, Note 6
wiper when wiper is either Full Scale or Zero Scale.
© 2007 Microchip Technology Inc. DS22060A-page 5
MCP413X/415X/423X/425X
AC/DC CHARACTERISTICS (CONTINUED)
Standard Operating Conditions (unless otherwise specified)
Operating Temperature –40°C ≤ T
DC Characteristics
All parameters apply across the specified operating ranges unless noted.
= +2.7V to 5.5V, 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ devices.
V
DD
Typical specifications represent values for V
Parameters Sym Min Typ Max Units Conditions
Full-Scale Error (MCP4XX1 only) (8-bit code = 100h, 7-bit code = 80h)
V
WFSE
-6.0 -0.1 LSb 5 kΩ 8-bit 3.0V ≤ VDD 5.5V
-4.0 -0.1 LSb 7-bit 3.0V ≤ V
-3.5 -0.1 LSb 10 kΩ 8-bit 3.0V VDD 5.5V
-2.0 -0.1 LSb 7-bit 3.0V VDD 5.5V
-0.8 -0.1 LSb 50 kΩ 8-bit 3.0V ≤ V
-0.5 -0.1 LSb 7-bit 3.0V ≤ V
-0.5 -0.1 LSb 100 kΩ 8-bit 3.0V VDD 5.5V
-0.5 -0.1 LSb 7-bit 3.0V VDD 5.5V
Zero-Scale Error (MCP4XX1 only) (8-bit code = 00h, 7-bit code = 00h)
V
WZSE
—+0.1+6.0LSb5kΩ 8-bit 3.0V ≤ VDD 5.5V
+0.1 +3.0 LSb 7-bit — +0.1 +3.5 LSb 10 kΩ 8-bit 3.0V VDD 5.5V
+0.1 +2.0 LSb 7-bit — +0.1 +0.8 LSb 50 kΩ 8-bit 3.0V ≤ V
+0.1 +0.5 LSb 7-bit — +0.1 +0.5 LSb 100 kΩ 8-bit 3.0V VDD 5.5V
+0.1 +0.5 LSb 7-bit
Potentiometer Integral
INL -1 ±0.5 +1 LSb 8-bit 3.0V ≤ V
-0.5 ±0.25 +0.5 LSb 7-bit
Non-linearity
Potentiometer Differential
DNL -0.5 ±0.25 +0.5 LSb 8-bit 3.0V ≤ V
-0.25 ±0.125 +0.25 LSb 7-bit
Non-linearity
Bandwidth -3 dB (See Figure 2-64, load = 30 pF)
BW 2 MHz 5 kΩ 8-bit Code = 80h
2 MHz 7-bit Code = 40h —1—MHz10kΩ 8-bit Code = 80h
1 MHz 7-bit Code = 40h —200—kHz50kΩ 8-bit Code = 80h
200 kHz 7-bit Code = 40h —100—kHz100kΩ 8-bit Code = 80h
100 kHz 7-bit Code = 40h
Note 1: Resistance is defined as the resistance between terminal A to terminal B.
2: INL and DNL are measured at VW with VA = VDD and VB = VSS. 3: MCP4XX1 only. 4: MCP4XX2 only, includes V
WZSE
and V
WFSE
.
5: Resistor terminals A, W and B’s polarity with respect to each other is not restricted. 6: This specification by design. 7: Non-linearity is affected by wiper resistance (R
), which changes significantly over voltage and
W
temperature.
8: The MCP4XX1 is externally connected to match the configurations of the MCP41X2 and MCP42X2, and
then tested.
9: POR/BOR is not rate dependent. 10: Supply current is independent of current through the resistor network.
+125°C (extended)
A
= 5.5V, TA = +25°C.
DD
MCP4XX1 devices only (Note 2)
MCP4XX1 devices only (Note 2)
5.5V
DD
5.5V
DD
DD
DD
DD
DD
5.5V
5.5V 5.5V
5.5V
DS22060A-page 6 © 2007 Microchip Technology Inc.
MCP413X/415X/423X/425X
AC/DC CHARACTERISTICS (CONTINUED)
Standard Operating Conditions (unless otherwise specified)
Operating Temperature –40°C ≤ T
DC Characteristics
All parameters apply across the specified operating ranges unless noted.
= +2.7V to 5.5V, 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ devices.
V
DD
Typical specifications represent values for V
Parameters Sym Min Typ Max Units Conditions
Rheostat Integral Non-linearity
R-INL -1.5 ±0.5 +1.5 LSb 5 kΩ 8-bit 5.5V, I
-8.25 +4.5 +8.25 LSb 3.0V, IW = 480 µA
MCP41X1 (Note 4, Note 8) MCP4XX2 devices only
(Note 4)
-1.125 ±0.5 +1.125 LSb 7-bit 5.5V, I
-6.0 +4.5 +6.0 LSb 3.0V, IW = 480 µA
Section 2.0 1.8V
Section 2.0 1.8V
-1.5 ±0.5 +1.5 LSb 10 kΩ 8-bit 5.5V, I
-5.5 +2.5 +5.5 LSb 3.0V, IW = 240 µA
Section 2.0 1.8V
-1.125 ±0.5 +1.125 LSb 7-bit 5.5V, IW = 450 µA
-4.0 +2.5 +4.0 LSb 3.0V, IW = 240 µA
Section 2.0 1.8V
-1.5 ±0.5 +1.5 LSb 50 kΩ 8-bit 5.5V, I
-2.0 +1 +2.0 LSb 3.0V, IW = 48 µA
Section 2.0 1.8V
-1.125 ±0.5 +1.125 LSb 7-bit 5.5V, I
-1.5 +1 +1.5 LSb 3.0V, IW = 48 µA
Section 2.0 1.8V
-1.0 ±0.5 +1.0 LSb 100 kΩ 8-bit 5.5V, I
-1.5 +0.25 +1.5 LSb 3.0V, IW = 24 µA
Section 2.0 1.8V
-0.8 ±0.5 +0.8 LSb 7-bit 5.5V, I
-1.125 +0.25 +1.125 LSb 3.0V, IW = 24 µA
Section 2.0 1.8v
Note 1: Resistance is defined as the resistance between terminal A to terminal B.
2: INL and DNL are measured at V
with VA = VDD and VB = VSS.
W
3: MCP4XX1 only. 4: MCP4XX2 only, includes V
WZSE
and V
WFSE
.
5: Resistor terminals A, W and B’s polarity with respect to each other is not restricted. 6: This specification by design. 7: Non-linearity is affected by wiper resistance (R
), which changes significantly over voltage and
W
temperature.
8: The MCP4XX1 is externally connected to match the configurations of the MCP41X2 and MCP42X2, and
then tested.
9: POR/BOR is not rate dependent. 10: Supply current is independent of current through the resistor network.
+125°C (extended)
A
= 5.5V, TA = +25°C.
DD
W
(Note 7)
W
(Note 7)
W
(Note 7)
(Note 7)
W
(Note 7)
W
(Note 7)
W
(Note 7)
W
(Note 7)
= 900 µA
= 900 µA
= 450 µA
= 90 µA
= 90 µA
= 45 µA
= 45 µA
© 2007 Microchip Technology Inc. DS22060A-page 7
MCP413X/415X/423X/425X
AC/DC CHARACTERISTICS (CONTINUED)
Standard Operating Conditions (unless otherwise specified)
Operating Temperature –40°C ≤ T
DC Characteristics
All parameters apply across the specified operating ranges unless noted.
= +2.7V to 5.5V, 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ devices.
V
DD
Typical specifications represent values for V
Parameters Sym Min Typ Max Units Conditions
Rheostat Differential Non-linearity MCP41X1 (Note 4, Note 8) MCP4XX2 devices only
(Note 4)
R-DNL -0.5 ±0.25 +0.5 LSb 5 kΩ 8-bit 5.5V, I
-1.0 +0.5 +1.0 LSb 3.0V (Note 7)
Section 2.0 1.8V
-0.375 ±0.25 +0.375 LSb 7-bit 5.5V, IW = 900 µA
-0.75 +0.5 +0.75 LSb 3.0V (Note 7)
Section 2.0 1.8V
-0.5 ±0.25 +0.5 LSb 10 kΩ 8-bit 5.5V, I
-1.0 +0.25 +1.0 LSb 3.0V (Note 7)
Section 2.0 1.8V
-0.375 ±0.25 +0.375 LSb 7-bit 5.5V, IW = 450 µA
-0.75 +0.5 +0.75 LSb 3.0V (Note 7)
Section 2.0 1.8V
-0.5 ±0.25 +0.5 LSb 50 kΩ 8-bit 5.5V, I
-0.5 ±0.25 +0.5 LSb 3.0V (Note 7)
Section 2.0 1.8V
-0.375 ±0.25 +0.375 LSb 7-bit 5.5V, IW = 90 µA
-0.375 ±0.25 +0.375 LSb 3.0V (Note 7)
Section 2.0 1.8V
-0.5 ±0.25 +0.5 LSb 100 kΩ 8-bit 5.5V, I
-0.5 ±0.25 +0.5 LSb 3.0V (Note 7)
Section 2.0 1.8V
-0.375 ±0.25 +0.375 LSb 7-bit 5.5V, I
-0.375 ±0.25 +0.375 LSb 3.0V (Note 7)
Capacitance (P
Capacitance (P
Capacitance (P
)C
A
)CW— 120 pF f =1 MHz, Code = Full-Scale
w
)C
B
AW
BW
75 pF f =1 MHz, Code = Full-Scale
75 pF f =1 MHz, Code = Full-Scale
Note 1: Resistance is defined as the resistance between terminal A to terminal B.
2: INL and DNL are measured at V
with VA = VDD and VB = VSS.
W
3: MCP4XX1 only. 4: MCP4XX2 only, includes V
WZSE
and V
WFSE
.
5: Resistor terminals A, W and B’s polarity with respect to each other is not restricted. 6: This specification by design. 7: Non-linearity is affected by wiper resistance (R
), which changes significantly over voltage and
W
temperature.
8: The MCP4XX1 is externally connected to match the configurations of the MCP41X2 and MCP42X2, and
then tested.
9: POR/BOR is not rate dependent. 10: Supply current is independent of current through the resistor network.
+125°C (extended)
A
= 5.5V, TA = +25°C.
DD
W
W
W
W
W
1.8V
= 900 µA
= 450 µA
= 90 µA
= 45 µA
= 45 µA
DS22060A-page 8 © 2007 Microchip Technology Inc.
MCP413X/415X/423X/425X
AC/DC CHARACTERISTICS (CONTINUED)
Standard Operating Conditions (unless otherwise specified)
Operating Temperature –40°C ≤ T
DC Characteristics
All parameters apply across the specified operating ranges unless noted.
= +2.7V to 5.5V, 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ devices.
V
DD
Typical specifications represent values for V
Parameters Sym Min Typ Max Units Conditions
Digital Inputs/Outputs (CS, SDI, SDO, SCK, SHDN)
Schmitt Trigger
V
IH
0.45 V
—— V2.7V ≤ VDD 5.5V
DD
High Input Threshold
—— V1.8V ≤ VDD 2.7V
DD
Schmitt Trigger
0.5 V
DD
V
IL
0.2V Low Input Threshold
Hysteresis of
V
HYS
—0.1VDD—V Schmitt Trigger Inputs
High Voltage Limit V
Output Low Voltage (SDO)
Output High Voltage (SDO)
Weak Pull-up / Pull-down Current
Pull-up /
CS
MAX
V
V
OL
0.7VDD —VDD VIOH = -2.5 mA, VDD = 5.5V
V
OH
——12.5
—0.3VDD VIOL = 5 mA, VDD = 5.5V
—0.3VDD VIOL = 1 mA, VDD = 1.8V
V
0.7VDD —VDD VIOL = -1 mA, VDD = 1.8V
I
PU
375 uA Internal VDD pull-up, V
—170— µACS
R
CS
—16—kΩ V
(6)
V Pin can tolerate V
Pull-down Resistance
Input Leakage
I
IL
-1 1 µA VIN = VDD and VIN = VSS
Current
Pin Capacitance C
, C
IN
OUT
—10—pFf
RAM (Wiper) Value
Value Range N 0h 1FFh hex 8-bit device
0h 1FFh hex 7-bit device
POR/BOR Value N 80h hex 8-bit device
40h hex 7-bit device
Note 1: Resistance is defined as the resistance between terminal A to terminal B.
2: INL and DNL are measured at V
with VA = VDD and VB = VSS.
W
3: MCP4XX1 only. 4: MCP4XX2 only, includes V
WZSE
and V
WFSE
.
5: Resistor terminals A, W and B’s polarity with respect to each other is not restricted. 6: This specification by design. 7: Non-linearity is affected by wiper resistance (R
), which changes significantly over voltage and
W
temperature.
8: The MCP4XX1 is externally connected to match the configurations of the MCP41X2 and MCP42X2, and
then tested.
9: POR/BOR is not rate dependent. 10: Supply current is independent of current through the resistor network.
+125°C (extended)
A
= 5.5V, TA = +25°C.
DD
(Allows 2.7V Digital V 5V Analog V
V
pin, V
= 5.5V, VCS = 3V
DD
= 20 MHz
C
DD
)
DD
or less.
MAX
= 5.5V, VCS = 3V
DD
IHH
with
pull-down
© 2007 Microchip Technology Inc. DS22060A-page 9
MCP413X/415X/423X/425X
AC/DC CHARACTERISTICS (CONTINUED)
Standard Operating Conditions (unless otherwise specified)
Operating Temperature –40°C ≤ T
DC Characteristics
All parameters apply across the specified operating ranges unless noted.
= +2.7V to 5.5V, 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ devices.
V
DD
Typical specifications represent values for V
Parameters Sym Min Typ Max Units Conditions
Power Requirements
Power Supply
PSS 0.0015 0.0035 %/% 8-bit V
Sensitivity (MCP41X2 and
0.0015 0.0035 %/% 7-bit V
MCP42X2 only)
Note 1: Resistance is defined as the resistance between terminal A to terminal B.
2: INL and DNL are measured at V
with VA = VDD and VB = VSS.
W
3: MCP4XX1 only. 4: MCP4XX2 only, includes V
WZSE
and V
WFSE
.
5: Resistor terminals A, W and B’s polarity with respect to each other is not restricted. 6: This specification by design. 7: Non-linearity is affected by wiper resistance (R
), which changes significantly over voltage and
W
temperature.
8: The MCP4XX1 is externally connected to match the configurations of the MCP41X2 and MCP42X2, and
then tested.
9: POR/BOR is not rate dependent. 10: Supply current is independent of current through the resistor network.
+125°C (extended)
A
= 5.5V, TA = +25°C.
DD
= 2.7V to 5.5V,
DD
= 2.7V, Code = 80h
V
A
= 2.7V to 5.5V,
DD
VA = 2.7V, Code = 40h
DS22060A-page 10 © 2007 Microchip Technology Inc.
MCP413X/415X/423X/425X
CS
SCK
SDO
SDI
70
71
72
73
74
75, 76
77
78
79
80
SDI
MSb LSb
BIT6 - - - - - -1
MSb IN BIT6 - - - -1 LSb IN
83
84
V
IH
V
IL
V
IHH
V
IH

1.1 SPI Mode Timing Waveforms and Requirements

FIGURE 1-1: SPI Timing Waveform (Mode = 11).

TABLE 1-1: SPI REQUIREMENTS (MODE =
# Characteristic Symbol Min Max Units Conditions
SCK Input Frequency F
70 CS
Active (VIL or V
71 SCK input high time TscH 45 ns VDD = 2.7V to 5.5V
72 SCK input low time TscL 45 ns V
73 Setup time of SDI input to SCK edge T 74 Hold time of SDI input from SCK edge TscH2 77 CS Inactive (VIH) to SDO output hi-impedance TcsH2DOZ 50 ns Note 1 80 SDO data output valid after SCK edge TscL2
83 CS
84 Hold time of CS
Inactive (VIH) after SCK edge TscH2csI 100 ns VDD = 2.7V to 5.5V
CS Active (VIL or V
Note 1: This specification by design.
) to SCK input TcsA2scH 60 ns
IHH
Inactive (VIH) to
)
IHH
11)
—10MHzVDD = 2.7V to 5.5V
SCK
—1MHzV
500 ns V
500 ns VDD = 1.8V to 2.7V
DIV2scH 10 ns
DIL20 —ns
DOV 70 ns V
1msV
TcsA2csI 50 ns
170 ns V
DD
DD
DD
DD
DD
DD
= 1.8V to 2.7V
= 1.8V to 2.7V = 2.7V to 5.5V
= 2.7V to 5.5V = 1.8V to 2.7V
= 1.8V to 2.7V
© 2007 Microchip Technology Inc. DS22060A-page 11
MCP413X/415X/423X/425X
CS
SCK
SDO
SDI
70
71 72
82
SDI
74
75, 76
MSb BIT6 - - - - - -1 LSb
77
MSb IN BIT6 - - - -1 LSb IN
80
83
84
73
V
IH
V
IL
V
IHH
V
IH

FIGURE 1-2: SPI Timing Waveform (Mode = 00).

TABLE 1-2: SPI REQUIREMENTS (MODE = 00)

# Characteristic Symbol Min Max Units Conditions
SCK Input Frequency F
—10MHzVDD = 2.7V to 5.5V
SCK
—1MHzVDD = 1.8V to 2.7V
70 CS
Active (VIL or V
71 SCK input high time TscH 45 ns V
) to SCK input TcsA2scH 60 ns
IHH
= 2.7V to 5.5V
DD
500 ns VDD = 1.8V to 2.7V
72 SCK input low time TscL 45 ns V
500 ns V
73 Setup time of SDI input to SCK edge T
DIV2scH 10 ns
= 2.7V to 5.5V
DD
= 1.8V to 2.7V
DD
74 Hold time of SDI input from SCK edge TscH2DIL20 —ns 77 CS 80 SDO data output valid after SCK edge TscL2
82 SDO data output valid after
83 CS
84 Hold time of CS
Inactive (VIH) to SDO output hi-impedance TcsH2DOZ— 50nsNote 1
DOV— 70nsV
170 ns V
= 2.7V to 5.5V
DD
= 1.8V to 2.7V
DD
TssL2doV 70 ns
Active (VIL or V
CS
IHH
)
Inactive (VIH) after SCK edge TscH2csI 100 ns VDD = 2.7V to 5.5V
= 1.8V to 2.7V
DD
Active (VIL or V
CS
Inactive (VIH) to
)
IHH
1msV
TcsA2csI 50 ns
Note 1: This specification by design.
DS22060A-page 12 © 2007 Microchip Technology Inc.
MCP413X/415X/423X/425X
TABLE 1-3: SPI REQUIREMENTS FOR SDI/SDO MULTIPLEXED (READ OPERATION ONLY)
Characteristic Symbol Min Max Units Conditions
SCK Input Frequency F
Active (VIL or V
CS SCK input high time TscH 1.8 us SCK input low time TscL 1.8 ns Setup time of SDI input to SCK edge T Hold time of SDI input from SCK edge TscH2 CS Inactive (VIH) to SDO output hi-impedance TcsH2DOZ 50 ns Note 1 SDO data output valid after SCK edge TscL2 SDO data output valid after
Active (VIL or V
CS
Inactive (VIH) after SCK edge TscH2csI 100 ns
CS Hold time of CS Inactive (VIH) to
Active (VIL or V
CS
Note 1: This specification by design.
2: This table is for the devices where the SPI’s SDI and SDO pins are multiplexed (SDI/SDO) and a Read
command is issued. This is NOT required for SDI/SDO operation with the Increment, Decrement, or Write commands. This data rate can be increased by having external pull-up resistors to increase the rising edges of each bit.
) to SCK input TcsA2scH 60 ns
IHH
TssL2doV 50 ns
)
IHH
)
IHH
—250kHzVDD = 2.7V to 5.5V
SCK
DIV2scH 40 ns
DIL40—ns
DOV—1.6us
TcsA2csI 50 ns
(2)
© 2007 Microchip Technology Inc. DS22060A-page 13
MCP413X/415X/423X/425X
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, VDD= +2.7V to +5.5V, VSS=GND.
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Specified Temperature Range T
Operating Temperature Range T
Storage Temperature Range T
Thermal Package Resistances
Thermal Resistance, 8L-PDIP θ Thermal Resistance, 8L-SOIC θ Thermal Resistance, 8L-MSOP θ Thermal Resistance, 8L-DFN (3x3) θ Thermal Resistance, 10L-PDIP θ Thermal Resistance, 10L-MSOP θ Thermal Resistance, 14L-PDIP θ Thermal Resistance, 14L-SOIC θ Thermal Resistance, 14L-MSOP θ Thermal Resistance, 16L-QFN θ
A
A
A
JA
JA
JA
JA
JA
JA
JA
JA
JA
JA
-40 +125 °C
-40 +125 °C
-65 +150 °C
84.6 °C/W
145.5 °C/W
—211—°C/W
68.5 °C/W
—82—°C/W
—202—°C/W
—70—°C/W
—85—°C/W
—N/A—°C/W
—50—°C/W
DS22060A-page 14 © 2007 Microchip Technology Inc.
MCP413X/415X/423X/425X
0
50
100
150
200
250
300
350
400
450
500
550
600
650
0.00 2.00 4.00 6.00 8.00 10.00 12.00 f
SCK
(MHz)
Operating Current (I
DD
) (µA)
2.7V -40°C
2.7V 25°C
2.7V 85°C
2.7V 125°C
5.5V -40°C
5.5V 25°C
5.5V 85°C
5.5V 125°C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-40 25 85 125
Ambient Temperature (°C)
Standby Current (Istby) (µA)
5.5V
2.7V
0
50
100
150
200
250
2345678910
V
CS
(V)
R
CS
(kOhms)
-1000
-800
-600
-400
-200
0
200
400
600
800
1000
I
CS
(µA)
I
CS
R
CS
0
2
4
6
8
10
12
-40-200 20406080100120
Ambient Temperature (°C)
CS V
PP
Threshold (V)
2.7V Exit
5.5V Exit
2.7V Entry
5.5V Entry

2.0 TYPICAL PERFORMANCE CURVES

Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
FIGURE 2-1: Device Current (IDD) vs. SPI Frequency (f (V
= 2.7V and 5.5V).
DD
FIGURE 2-2: Device Current (I V
. (CS = VDD) vs. Ambient Temperature.
DD
) and Ambient Temperature
SCK
SHDN
) and
FIGURE 2-3: CS Resistance (R Voltage (V
) and Current (ICS) vs. CS Input
CS
) (V
CS
DD
FIGURE 2-4: CS
Pull-up/Pull-down
= 5.5V).
High Input Entry/Exit
Threshold vs. Ambient Temperature and V
DD
.
© 2007 Microchip Technology Inc. DS22060A-page 15
MCP413X/415X/423X/425X
20
60
100
140
180
220
260
300
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
Wiper Resistance (R
W
(ohms)
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C INL 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
-40°C
25°C
85°C
R
W
125°C
20
40
60
80
100
120
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
Wiper Resistance (R
W
(ohms)
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C IN L 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
R
W
-40°C 25°C
85°C
125°C
0
500
1000
1500
2000
2500
0 64 128 192 256
Wiper Setting (decimal)
Wiper Resistance (R
W
(ohms)
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
0.4
0.5
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C IN L 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
RW
Note: Refer to AN1080 for additional informa-
tion on the characteristics of the wiper resistance (R
W
) with respect to device
voltage and wiper setting value.
20
60
100
140
180
220
260
300
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
Wiper Resistance (R
W
(ohms)
-2
0
2
4
6
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C INL 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
R
W
-40°C
25°C
85°C125°C
20
40
60
80
100
120
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
Wiper Resistance (R
W
(ohms)
-1.25
-0.75
-0.25
0.25
0.75
1.25
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C INL 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
R
-40°C
25°C
85°C
125°C
0
500
1000
1500
2000
2500
0 64 128 192 256
Wiper Setting (decimal)
Wiper Resistance (R
W
(ohms)
-2
18
38
58
78
98
118
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C IN L 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
RW
Note: Refer to AN1080 for additional informa-
tion on the characteristics of the wiper resistance (R
W
) with respect to device
voltage and wiper setting value.
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
)
FIGURE 2-5: 5kΩ Pot Mode – RW (Ω), INL (LSb), DNL (LSb) vs. Wiper Setting and Ambient Temperature (V
)
= 5.5V).
DD
)
FIGURE 2-8: 5k
Ω
Rheo Mode – RW (Ω), INL (LSb), DNL (LSb) vs. Wiper Setting and Ambient Temperature (V
)
= 5.5V).
DD
W
Ω
FIGURE 2-6: 5k
Pot Mode – RW (Ω), INL (LSb), DNL (LSb) vs. Wiper Setting and Ambient Temperature (V
)
FIGURE 2-7: 5k INL (LSb), DNL (LSb) vs. Wiper Setting and Ambient Temperature (V
DS22060A-page 16 © 2007 Microchip Technology Inc.
= 3.0V).
DD
Ω
Pot Mode – RW (Ω),
= 1.8V).
DD
Ω
FIGURE 2-9: 5k
Rheo Mode – RW (Ω), INL (LSb), DNL (LSb) vs. Wiper Setting and Ambient Temperature (V
)
FIGURE 2-10: 5k
= 3.0V).
DD
Ω
Rheo Mode – RW (Ω), INL (LSb), DNL (LSb) vs. Wiper Setting and Ambient Temperature (V
= 1.8V).
DD
MCP413X/415X/423X/425X
5050
5100
5150
5200
5250
5300
-40 0 40 80 120 Ambient Temperature (°C)
Nominal Resistance (R
AB
(Ohms)
2.7V
5.5V
1.8V
0
1000
2000
3000
4000
5000
6000
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
R
WB
(Ohms)
-40°C 25°C 85°C 125°C
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
)
FIGURE 2-11: 5kΩ – Nominal Resistance (
Ω
) vs. Ambient Temperature and VDD.
Ω
FIGURE 2-12: 5k
– RWB (Ω) vs. Wiper
Setting and Ambient Temperature.
© 2007 Microchip Technology Inc. DS22060A-page 17
MCP413X/415X/423X/425X
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
FIGURE 2-13: 5kΩ – Low-Voltage Decrement Wiper Settling Time (V (1 µs/Div).
Ω
FIGURE 2-14: 5k Decrement Wiper Settling Time (V (1 µs/Div).
– Low-Voltage
= 5.5V)
DD
= 2.7V)
DD
FIGURE 2-16: 5k Increment Wiper Settling Time (V (1 µs/Div).
FIGURE 2-17: 5k Increment Wiper Settling Time (V (1 µs/Div).
Ω
– Low-Voltage
Ω
– Low-Voltage
= 5.5V)
DD
= 2.7V)
DD
Ω
FIGURE 2-15: 5k Response Time (20 ms/Div).
DS22060A-page 18 © 2007 Microchip Technology Inc.
– Power-Up Wiper
MCP413X/415X/423X/425X
20
40
60
80
100
120
0 25 50 75 100 125150 175 200 225 250
Wiper Setting (decimal)
Wiper Resistance (R
W
(ohms)
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C INL 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
R
W
-40°C
25°C
85°C
125°C
20
60
100
140
180
220
260
300
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
Wiper Resistance (R
W
(ohms)
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C INL 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
R
W
-40°C
25°C
85°C
125°C
0
500
1000
1500
2000
2500
3000
3500
4000
0 64 128 192 256
Wiper Setting (decimal)
Wiper Resistance
(R
W
)(ohms)
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C IN L 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
RW
Note: Refer to AN1080 for additional informa-
tion on the characteristics of the wiper resistance (R
W
) with respect to device
voltage and wiper setting value.
20
40
60
80
100
120
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
Wiper Resistance (R
W
(ohms)
-1
-0.5
0
0.5
1
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C IN L 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
R
W
-40°C
25°C85°C
125°C
20
60
100
140
180
220
260
300
0 25 50 75 100 125 150 175 200 225 250
Wiper Setting (decimal)
Wiper Resistance (R
W
(ohms)
-2
-1
0
1
2
3
4
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C INL 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL R
W
-40°C
25°C85°C
125°C
0
500
1000
1500
2000
2500
3000
3500
4000
0 64 128 192 256
Wiper Setting (decimal)
Wiper Resistance (R
W
(ohms)
-2
8
18
28
38
48
58
68
78
88
98
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C IN L 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
RW
Note: Refer to AN1080 for additional informa-
tion on the characteristics of the wiper resistance (R
W
) with respect to device
voltage and wiper setting value.
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
)
FIGURE 2-18: 10 kΩ Pot Mode – RW (Ω), INL (LSb), DNL (LSb) vs. Wiper Setting and Ambient Temperature (V
)
= 5.5V).
DD
)
FIGURE 2-21: 10 k
Ω
Rheo Mode – RW (Ω), INL (LSb), DNL (LSb) vs. Wiper Setting and Ambient Temperature (V
)
= 5.5V).
DD
FIGURE 2-19: 10 k
Ω
INL (LSb), DNL (LSb) vs. Wiper Setting and Ambient Temperature (V
FIGURE 2-20: 10 k INL (LSb), DNL (LSb) vs. Wiper Setting and Ambient Temperature (V
© 2007 Microchip Technology Inc. DS22060A-page 19
DD
Ω
DD
Pot Mode – RW (Ω),
= 3.0V).
Pot Mode – RW (Ω),
= 1.8V).
Ω
FIGURE 2-22: 10 k
Rheo Mode – RW (Ω), INL (LSb), DNL (LSb) vs. Wiper Setting and Ambient Temperature (V
)
FIGURE 2-23: 10 k
= 3.0V).
DD
Ω
Rheo Mode – RW (Ω), INL (LSb), DNL (LSb) vs. Wiper Setting and Ambient Temperature (V
= 1.8V).
DD
MCP413X/415X/423X/425X
9850
9900
9950
10000
10050
10100
10150
10200
10250
10300
-40 0 40 80 120
Ambient Temperature (°C)
Nominal Resistance (R
AB
(Ohms)
2.7V
5.5V
1.8V
0
2000
4000
6000
8000
10000
12000
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
R
WB
(Ohms)
-40°C 25°C 85°C 125°C
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
)
FIGURE 2-24: 10 kΩ – Nominal Resistance (
Ω
) vs. Ambient Temperature and VDD.
Ω
FIGURE 2-25: 10 k
– RWB (Ω) vs. Wiper
Setting and Ambient Temperature.
DS22060A-page 20 © 2007 Microchip Technology Inc.
MCP413X/415X/423X/425X
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
FIGURE 2-26: 10 kΩ – Low-Voltage Decrement Wiper Settling Time (V (1 µs/Div).
Ω
FIGURE 2-27: 10 k Decrement Wiper Settling Time (V (1 µs/Div).
– Low-Voltage
= 5.5V)
DD
= 2.7V)
DD
FIGURE 2-28: 10 k Increment Wiper Settling Time (V (1 µs/Div).
FIGURE 2-29: 10 k Increment Wiper Settling Time (V (1 µs/Div).
Ω
– Low-Voltage
Ω
– Low-Voltage
= 5.5V)
DD
= 2.7V)
DD
© 2007 Microchip Technology Inc. DS22060A-page 21
MCP413X/415X/423X/425X
20
40
60
80
100
120
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
Wiper Resistance (R
W
)
(ohms)
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C IN L 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
R
W
-40°C
25°C
85°C
125°C
20
60
100
140
180
220
260
300
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
Wiper Resistance (R
W
)
(ohms)
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
Error (LSb)
-40C Rw 25C Rw 85C Rw 12 5C Rw
-40C INL 25C INL 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
R
W
-40°C
25°C
85°C
125°C
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000
11000
12000
13000
14000
15000
064128192256
Wiper Setting (decimal)
Wiper Resistance (R
W
(ohms)
-0.5
-0.4
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
0.4
0.5
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C INL 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
RW
Note: Refer to AN1080 for additional informa-
tion on the characteristics of the wiper resistance (R
W
) with respect to device
voltage and wiper setting value.
20
40
60
80
100
120
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
Wiper Resistance (R
W
)
(ohms)
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C IN L 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
R
W
-40°C
25°C
85°C
125°C
20
60
100
140
180
220
260
300
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
Wiper Resistance (R
W
(ohms)
-1
-0.75
-0.5
-0.25
0
0.25
0.5
0.75
1
Error (LSb)
-40C Rw 25C Rw 85C Rw 12 5C Rw
-40C INL 25C INL 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
R
W
-40°C
25°C
85°C
125°C
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000
11000
12000
13000
14000
15000
0 25 50 75 100125 150 175200 225 250
Wiper Setting (decimal)
Wiper Resistance (Rw)
(ohms)
-1.5
3.5
8.5
13.5
18.5
23.5
28.5
33.5
38.5
43.5
48.5
53.5
58.5
63.5
68.5
73.5
78.5
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C INL 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
RW
Note: Refer to AN1080 for additional informa-
tion on the characteristics of the wiper resistance (R
W
) with respect to device
voltage and wiper setting value.
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
FIGURE 2-30: 50 kΩ Pot Mode – RW (Ω), INL (LSb), DNL (LSb) vs. Wiper Setting and Ambient Temperature (V
FIGURE 2-31: 50 k
= 5.5V).
DD
Ω
Pot Mode – RW (Ω), INL (LSb), DNL (LSb) vs. Wiper Setting and Ambient Temperature (V
)
= 3.0V).
DD
FIGURE 2-33: 50 k
Ω
Rheo Mode – RW (Ω), INL (LSb), DNL (LSb) vs. Wiper Setting and Ambient Temperature (V
)
FIGURE 2-34: 50 k
= 5.5V).
DD
Ω
Rheo Mode – RW (Ω), INL (LSb), DNL (LSb) vs. Wiper Setting and Ambient Temperature (V
= 3.0V).
DD
FIGURE 2-32: 50 k INL (LSb), DNL (LSb) vs. Wiper Setting and Ambient Temperature (V
DS22060A-page 22 © 2007 Microchip Technology Inc.
Ω
Pot Mode – RW (Ω),
= 1.8V).
DD
Ω
FIGURE 2-35: 50 k
Rheo Mode – RW (Ω), INL (LSb), DNL (LSb) vs. Wiper Setting and Ambient Temperature (V
= 1.8V).
DD
MCP413X/415X/423X/425X
49000
49500
50000
50500
51000
51500
52000
52500
-40 0 40 80 120 Ambient Temperature (°C)
Nominal Resistance (R
AB
(Ohms)
2.7V
1.8V
5.5V
0
10000
20000
30000
40000
50000
60000
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
R
WB
(Ohms)
-40°C 25°C 85°C 125°C
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
)
FIGURE 2-36: 50 kΩ – Nominal Resistance (
Ω
) vs. Ambient Temperature and VDD.
Ω
FIGURE 2-37: 50 k
– RWB (Ω) vs. Wiper
Setting and Ambient Temperature.
© 2007 Microchip Technology Inc. DS22060A-page 23
MCP413X/415X/423X/425X
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
FIGURE 2-38: 50 kΩ – Low-Voltage Decrement Wiper Settling Time (V (1 µs/Div).
Ω
FIGURE 2-39: 50 k Decrement Wiper Settling Time (V (1 µs/Div).
– Low-Voltage
DD
DD
= 5.5V)
= 2.7V)
FIGURE 2-40: 50 k Increment Wiper Settling Time (V (1 µs/Div).
FIGURE 2-41: 50 k Increment Wiper Settling Time (V (1 µs/Div).
Ω
– Low-Voltage
Ω
– Low-Voltage
= 5.5V)
DD
= 2.7V)
DD
DS22060A-page 24 © 2007 Microchip Technology Inc.
MCP413X/415X/423X/425X
20
40
60
80
100
120
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
Wiper Resistance (R
W
(ohms)
-0.2
-0.1
0
0.1
0.2
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C IN L 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
R
W
-40°C
25°C
85°C
125°C
20
60
100
140
180
220
260
300
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
Wiper Resistance (R
W
(ohms)
-0.2
-0.15
-0.1
-0.05
0
0.05
0.1
0.15
0.2
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C IN L 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
R
W
-40°C
25°C
85°C
125°C
0
5000
10000
15000
20000
25000
0 64 128 192 256
Wiper Setting (decimal)
Wiper Resistance (R
W
(ohms)
-0.35
-0.25
-0.15
-0.05
0.05
0.15
0.25
0.35
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C IN L 85 C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
RW
Note: Refer to AN1080 for additional informa-
tion on the characteristics of the wiper resistance (R
W
) with respect to device
voltage and wiper setting value.
20
40
60
80
100
120
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
Wiper Resistance (R
W
(ohms)
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C IN L 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
R
W
-40°C
25°C85°C
125°C
20
60
100
140
180
220
260
300
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
Wiper Resistance (Rw)
(ohms)
-0.6
-0.4
-0.2
0
0.2
0.4
0.6
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C I NL 85 C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
R
W
-40°C
25°C85°C
125°C
0
5000
10000
15000
20000
25000
0 64 128 192 256
Wiper Setting (decimal)
Wiper Resistance (R
W
(ohms)
-1
4
9
14
19
24
29
34
39
44
49
54
59
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C INL 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
RW
Note: Refer to AN1080 for additional informa-
tion on the characteristics of the wiper resistance (R
W
) with respect to device
voltage and wiper setting value.
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
)
FIGURE 2-42: 100 kΩ Pot Mode – RW (Ω), INL (LSb), DNL (LSb) vs. Wiper Setting and Ambient Temperature (V
)
= 5.5V).
DD
)
FIGURE 2-45: 100 k (
Ω
), INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (V
Ω
Rheo Mode – RW
= 5.5V).
DD
FIGURE 2-43: 100 k INL (LSb), DNL (LSb) vs. Wiper Setting and Ambient Temperature (V
)
FIGURE 2-44: 100 k INL (LSb), DNL (LSb) vs. Wiper Setting and Ambient Temperature (V
© 2007 Microchip Technology Inc. DS22060A-page 25
DD
DD
Ω
Pot Mode – RW (Ω),
= 3.0V).
Ω
Pot Mode – RW (Ω),
= 1.8V).
Ω
FIGURE 2-46: 100 k (
Ω
), INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (V
)
FIGURE 2-47: 100 k (
Ω
), INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (V
Rheo Mode – RW
= 3.0V).
DD
Ω
Rheo Mode – RW
= 1.8V).
DD
MCP413X/415X/423X/425X
98500
99000
99500
100000
100500
101000
101500
102000
102500
103000
103500
-40 0 40 80 120 Ambient Temperature (°C)
Nominal Resistance (R
AB
(Ohms)
2.7V
5.5V
1.8V
0
20000
40000
60000
80000
100000
120000
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
Rwb (Ohms)
-40°C 25°C 85°C 125°C
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
)
FIGURE 2-48: 100 kΩ – Nominal Resistance ( V
.
DD
Ω
) vs. Ambient Temperature and
Ω
FIGURE 2-49: 100 k
– RWB (Ω) vs. Wiper
Setting and Ambient Temperature.
DS22060A-page 26 © 2007 Microchip Technology Inc.
MCP413X/415X/423X/425X
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
FIGURE 2-50: 100 kΩ – Low-Voltage Decrement Wiper Settling Time (V (1 µs/Div).
Ω
FIGURE 2-51: 100 k Decrement Wiper Settling Time (V (1 µs/Div).
– Low-Voltage
= 5.5V)
DD
= 2.7V)
DD
FIGURE 2-52: 100 k Increment Wiper Settling Time (V (1 µs/Div).
FIGURE 2-53: 100 k Response Time (1 µs/Div).
Ω
– Low-Voltage
Ω
– Power-Up Wiper
DD
= 2.7V)
© 2007 Microchip Technology Inc. DS22060A-page 27
MCP413X/415X/423X/425X
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.1
-40 0 40 80 120 Temperature (°C)
%
5.5V
3.0V
-0.04
-0.03
-0.02
-0.01
0
0.01
0.02
0.03
0.04
-40 0 40 80 120 Temperature (°C)
%
5.5V
3.0V
0
0.02
0.04
0.06
0.08
0.1
0.12
-40 0 40 80 120
Temperature (°C)
%
5.5V
3.0V
-0.03
-0.02
-0.01
0
0.01
0.02
0.03
0.04
0.05
-40 10 60 110
Temperature (°C)
%
5.5V
3.0V
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
FIGURE 2-54: Resistor Network 0 to Resistor Network 1 R
(5 kΩ) Mismatch vs. VDD
AB
and Temperature.
FIGURE 2-55: Resistor Network 0 to Resistor Network 1 R V
and Temperature.
DD
(10 kΩ) Mismatch vs.
AB
FIGURE 2-56: Resistor Network 0 to Resistor Network 1 R V
and Temperature.
DD
(50 kΩ) Mismatch vs.
AB
FIGURE 2-57: Resistor Network 0 to Resistor Network 1 R V
and Temperature.
DD
(100 kΩ) Mismatch vs.
AB
DS22060A-page 28 © 2007 Microchip Technology Inc.
MCP413X/415X/423X/425X
1
1.2
1.4
1.6
1.8
2
2.2
2.4
-40 0 40 80 120
Temperature (°C)
V
IH
(V)
5.5V
2.7V
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
-40 0 40 80 120
Temperature (°C)
V
IL
(V)
5.5V
2.7V
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
-40 0 40 80 120
Temperature (°C)
I
OH
(mA)
5.5V
2.7V
0
5
10
15
20
25
30
35
40
45
50
-40 0 40 80 120
Temperature (°C)
I
OL
(mA)
5.5V
2.7V
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
FIGURE 2-58: VIH (SDI, SCK, CS, and SHDN
) vs. VDD and Temperature.
FIGURE 2-59: V SHDN
) vs. VDD and Temperature.
(SDI, SCK, CS, and
IL
FIGURE 2-60: I Temperature.
FIGURE 2-61: I Temperature.
(SDO) vs. VDD and
OH
(SDO) vs. VDD and
OL
© 2007 Microchip Technology Inc. DS22060A-page 29
MCP413X/415X/423X/425X
0
0.2
0.4
0.6
0.8
1
1.2
-40 0 40 80 120
Temperature (°C)
V
DD
(V)
2.7V
5.5V
12.0
12.5
13.0
13.5
14.0
14.5
15.0
-40 0 40 80 120
Temperature (°C)
fsck (MHz)
2.7V
5.5V
+
-
V
OUT
2.5V DC
+5V
A
B
W
Offset GND
V
IN
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.

FIGURE 2-62: POR/BOR Trip point vs. VDD and Temperature.

2.1 Test Circuits

FIGURE 2-64: -3 db Gain vs. Frequency Test.

FIGURE 2-63: SCK Input Frequency vs. Voltage and Temperature.

DS22060A-page 30 © 2007 Microchip Technology Inc.
MCP413X/415X/423X/425X

3.0 PIN DESCRIPTIONS

The descriptions of the pins are listed in Ta b le 3 - 1. Additional descriptions of the device pins follows.

TABLE 3-1: PINOUT DESCRIPTION FOR THE MCP413X/415X/423X/425X

Pin
Single Dual
Rheo Pot
(1)
Rheo Pot
8L 8L 10L 14L 16L
Symbol I/O
Buffer
Type
Weak Pull-up/ down
(2)
Standard Function
111116
CS
I HV w/ST “smart” SPI Chip Select Input
2 2 2 2 1 SCK I HV w/ST “smart” SPI Clock Input
3 3 3 2 SDI I HV w/ST “smart” SPI Serial Data Input
3 SDI/SDO
44443, 4V
(1, 3)
I/O HV w/ST “smart” SPI Serial Data Input/Output
P Ground
5 5 5 P1B A Analog No Potentiometer 1 Terminal B
6 6 6 P1W A Analog No Potentiometer 1 Wiper Terminal
7 7 P1A A Analog No Potentiometer 1 Terminal A
5 8 8 P0A A Analog No Potentiometer 0 Terminal A
5 6 7 9 9 P0W A Analog No Potentiometer 0 Wiper Terminal
6 7 8 10 10 P0B A Analog No Potentiometer 0 Terminal B
———1213
SHDN
I HV w/ST “smart” Hardware Shutdown
7 9 13 14 SDO O O No SPI Serial Data Out
8 8 10 14 15 V
P Positive Power Supply Input
DD
11 11,12 NC No Connection
(4)
(4)
(4)
(4)
Exposed Pad Note 4
Legend: HV w/ST = High Voltage tolerant input (with Schmidtt trigger input)
A = Analog pins (Potentiometer terminals) I = digital input (high Z) O = digital output I/O = Input / Output P = Power
Note 1: The 8-lead Single Potentiometer devices are pin limited so the SDO pin is multiplexed with the SDI pin
(SDI/SDO pin). After the Address/Command (first 6-bits) are received, If a valid Read command has been requested, the SDO pin starts driving the requested read data onto the SDI/SDO pin.
2: The pin’s “smart” pull-up shuts off while the pin is forced low. This is done to reduce the standby and shut-
down current.
3: The SDO is an open drain output, which uses the internal “smart” pull-up. The SDI input data rate can be
at the maximum SPI frequency. the SDO output data rate will be limited by the “speed” of the pull-up, cus­tomers can increase the rate with external pull-up resistors.
4: The DFN and QFN packages have a contact on the bottom of the package. This contact is conductively
connected to the die substrate, and therefore should be unconnected or connected to the same ground as the device’s V
pin.
© 2007 Microchip Technology Inc. DS22060A-page 31
MCP413X/415X/423X/425X

3.1 Chip Select (CS)

The CS pin is the serial interface’s chip select input. Forcing the CS Forcing the CS pin to V serial commands.
pin to VIL enables the serial commands.
enables the high-voltage
IHH

3.2 Serial Data In (SDI)

The SDI pin is the serial interfaces Serial Data In pin. This pin is connected to the Host Controllers SDO pin.

3.3 Serial Data In / Serial Data Out (SDI/SDO)

On the MCP41X1 devices, pin-out limitations do not allow for individual SDI and SDO pins. On these devices, the SDI and SDO pins are multiplexed.
The MCP41X1 serial interface knows when the pin needs to change from being an input (SDI) to being an output (SDO). The Host Controller’s SDO pin must be properly protected from a drive conflict.

3.4 Ground (VSS)

The VSS pin is the device ground reference.

3.5 Potentiometer Terminal B

The terminal B pin is connected to the internal potenti­ometer’s terminal B.
The potentiometer’s terminal B is the fixed connection to the Zero Scale wiper value of the digital potentiome­ter. This corresponds to a wiper value of 0x00 for both 7-bit and 8-bit devices.
The terminal B pin does not have a polarity relative to the terminal W or A pins. The terminal B pin can support both positive and negative current. The voltage on terminal B must be between V
MCP42XX devices have two terminal B pins, one for each resistor network.
and VDD.

3.6 Potentiometer Wiper (W) Terminal

3.7 Potentiometer Terminal A

The terminal A pin is available on the MCP4XX1 devices, and is connected to the internal potentiome­ter’s terminal A.
The potentiometer’s terminal A is the fixed connection to the Full Scale wiper value of the digital potentiome­ter. This corresponds to a wiper value of 0x100 for 8-bit devices or 0x80 for 7-bit devices.
The terminal A pin does not have a polarity relative to the terminal W or B pins. The terminal A pin can support both positive and negative current. The voltage on terminal A must be between V
The terminal A pin is not available on the MCP4XX2 devices, and the internally terminal A signal is floating.
MCP42X1 devices have two terminal A pins, one for each resistor network.
and VDD.

3.8 Shutdown (SHDN)

The SHDN pin is used to force the resistor network terminals into the hardware shutdown state.

3.9 Serial Data Out (SDO)

The SDO pin is the serial interfaces Serial Data Out pin. This pin is connected to the Host Controllers SDI pin.
This pin allows the Host Controller to read the digital potentiometers registers, or monitor the state of the command error bit.

3.10 Positive Power Supply Input (VDD)

The VDD pin is the device’s positive power supply input. The input power supply is relative to V
While the device V performance of the device may not meet the data sheet specifications.
DD
< V
(2.7V), the electrical
min
SS
.

3.11 No Connection

Those pins should be either connected to VDD or VSS.
The terminal W pin is connected to the internal potenti­ometer’s terminal W (the wiper). The wiper terminal is the adjustable terminal of the digital potentiometer. The terminal W pin does not have a polarity relative to terminals A or B pins. The terminal W pin can support both positive and negative current. The voltage on terminal W must be between V
MCP42XX devices have two terminal W pins, one for each resistor network.
DS22060A-page 32 © 2007 Microchip Technology Inc.
and VDD.
MCP413X/415X/423X/425X

4.0 FUNCTIONAL OVERVIEW

This Data Sheet covers a family of thirty-two Digital Potentiometer and Rheostat devices that will be referred to as MCP4XXX. The MCP4XX1 devices are the Potentiometer configuration, while the MCP4XX2 devices are the Rheostat configuration.
As the Device Block Diagram shows, there are four main functional blocks. These are:
POR/BOR Operation
Memory Map
Resistor Network
Serial Interface (SPI)
The POR/BOR operation and the Memory Map are discussed in this section and the Resistor Network and SPI operation are described in their own sections. The
Device Commands commands are discussed in
Section 7.0.

4.1 POR/BOR Operation

The Power-on Reset is the case where the device is having power applied to it from V Reset occurs when a device had power applied to it, and that power (voltage) drops below the specified range.
The devices RAM retention voltage (V than the POR/BOR voltage trip point (V maximum V
When V
POR/VBOR
POR/VBOR
voltage is less then 1.8V.
< VDD < 2.7V, the electrical performance may not meet the data sheet specifications. In this region, the device is capable of incrementing, decrementing, reading and writing to its volatile memory if the proper serial command is exe­cuted.
4.1.1 POWER-ON RESET
When the device powers up, the device VDD will cross the V
POR/VBOR
the V
POR/VBOR
• Volatile wiper register is loaded with the default
wiper value
• The TCON register is loaded it’s default value
• The device is capable of digital operation
voltage. Once the VDD voltage crosses voltage the following happens:
. The Brown-out
) is lower
RAM
POR/VBOR
). The
4.1.2 BROWN-OUT RESET
When the device powers down, the device VDD will cross the V
Once the V
POR/VBOR
DD
voltage.
voltage decreases below the V
POR/VBOR
voltage the following happens:
• Serial Interface is disabled
If the V
voltage decreases below the V
DD
RAM
voltage
the following happens:
• Volatile wiper registers may become corrupted
• TCON register may become corrupted
As the voltage recovers above the V
POR/VBOR
voltage
see Section 4.1.1 “Power-on Reset”.
Serial commands not completed due to a brown-out condition may cause the memory location to become corrupted.

4.2 Memory Map

The device memory is 16 locations that are 9-bits wide (16x9 bits). This memory space contains four volatile locations (see Table 4-1).

TABLE 4-1: MEMORY MAP

Address Function Memory Type
00h Volatile Wiper 0 RAM 01h Volatile Wiper 1 RAM 02h Reserved — 03h Reserved — 04h Volatile TCON Register RAM 05h Status Register RAM
06h-0Fh Reserved
4.2.1 VOLATILE MEMORY (RAM)
There are four Volatile Memory locations. These are:
• Volatile Wiper 0
• Volatile Wiper 1 (Dual Resistor Network devices only)
• Status Register
• Terminal Control (TCON) Register
The volatile memory starts functioning at the RAM retention voltage (V
RAM
).
© 2007 Microchip Technology Inc. DS22060A-page 33
MCP413X/415X/423X/425X
4.2.1.1 Status (STATUS) Register
This register contains 5 status bits. These bits show the state of the Shutdown bit. The STATUS register can be accessed via the READ commands. Register 4-1 describes each STATUS register bit.
The STATUS register is placed at Address 05h.
REGISTER 4-1: STATUS REGISTER
R-1 R-1 R-1 R-1 R-0 R-x R-x R-x R-x
D8:D5 RESV RESV RESV SHDN RESV
bit 7 bit 0
Legend:
R = Readable bit W = Writable bit U = Unimplemented bit, read as ‘0’
-n = Value at POR ‘1’ = Bit is set ‘0’ = Bit is cleared x = Bit is unknown
bit 8-5 D8:D5: Reserved. Forced to “1”
bit 4-2 RESV: Reserved
bit 1 SHDN: Hardware Shutdown pin Status bit (Refer to Section 5.3 “Shutdown” for further information)
This bit indicates if the Hardware shutdown pin (SHDN Terminal A and forces the wiper (Terminal W) to Terminal B (see Figure 5-2). While the device is in Hard­ware Shutdown (the SHDN read.
1 = MCP4XXX is in the Hardware Shutdown state 0 = MCP4XXX is NOT in the Hardware Shutdown state
bit 0 RESV: Reserved
pin is low) the serial interface is operational so the STATUS register may be
) is low. A hardware shutdown disconnects the
DS22060A-page 34 © 2007 Microchip Technology Inc.
MCP413X/415X/423X/425X
4.2.1.2 Terminal Control (TCON) Register
This register contains 8 control bits. Four bits are for Wiper 0, and four bits are for Wiper 1. Register 4-2 describes each bit of the TCON register.
The state of each resistor network terminal connection is individually controlled. That is, each terminal connec­tion (A, B and W) can be individually connected/discon­nected from the resistor network. This allows the system to minimize the currents through the digital potentiometer.
REGISTER 4-2: TCON BITS
R-1 R/W-1 R/W-1 R/W-1 R/W-1 R/W-1 R/W-1 R/W-1 R/W-1
D8 R1HW R1A R1W R1B R0HW R0A R0W R0B
bit 8 bit 0
Legend:
R = Readable bit W = Writable bit U = Unimplemented bit, read as ‘0’
-n = Value at POR ‘1’ = Bit is set ‘0’ = Bit is cleared x = Bit is unknown
bit 8 D8: Reserved. Forced to “1”
bit 7 R1HW: Resistor 1 Hardware Configuration Control bit
This bit forces Resistor 1 into the “shutdown” configuration of the Hardware pin
1 = Resistor 1 is NOT forced to the hardware pin “shutdown” configuration 0 = Resistor 1 is forced to the hardware pin “shutdown” configuration
bit 6 R1A: Resistor 1 Terminal A (P1A pin) Connect Control bit
This bit connects/disconnects the Resistor 1 Terminal A to the Resistor 1 Network
1 = P1A pin is connected to the Resistor 1 Network 0 = P1A pin is disconnected from the Resistor 1 Network
bit 5 R1W: Resistor 1 Wiper (P1W pin) Connect Control bit
This bit connects/disconnects the Resistor 1 Wiper to the Resistor 1 Network
1 = P1W pin is connected to the Resistor 1 Network 0 = P1W pin is disconnected from the Resistor 1 Network
bit 4 R1B: Resistor 1 Terminal B (P1B pin) Connect Control bit
This bit connects/disconnects the Resistor 1 Terminal B to the Resistor 1 Network
1 = P1B pin is connected to the Resistor 1 Network 0 = P1B pin is disconnected from the Resistor 1 Network
bit 3 R0HW: Resistor 0 Hardware Configuration Control bit
This bit forces Resistor 0 into the “shutdown” configuration of the Hardware pin
1 = Resistor 0 is NOT forced to the hardware pin “shutdown” configuration 0 = Resistor 0 is forced to the hardware pin “shutdown” configuration
bit 2 R0A: Resistor 0 Terminal A (P0A pin) Connect Control bit
This bit connects/disconnects the Resistor 0 Terminal A to the Resistor 0 Network
1 = P0A pin is connected to the Resistor 0 Network 0 = P0A pin is disconnected from the Resistor 0 Network
(1, 2)
The value that is written to this register will appear on the resistor network terminals when the serial com­mand has completed.
On a POR/BOR this register is loaded with 1FFh (9-bits), for all terminals connected. The Host Control­ler needs to detect the POR/BOR event and then update the Volatile TCON register value.
Note 1: The hardware SHDN
inactive state, the TCON register will control the state of the terminals. The SHDN state of the TCON bits.
2: These bits do not affect the wiper register values.
© 2007 Microchip Technology Inc. DS22060A-page 35
pin (when active) overrides the state of these bits. When the SHDN pin returns to the
pin does not modify the
MCP413X/415X/423X/425X
REGISTER 4-2: TCON BITS
bit 1 R0W: Resistor 0 Wiper (P0W pin) Connect Control bit
This bit connects/disconnects the Resistor 0 Wiper to the Resistor 0 Network
1 = P0W pin is connected to the Resistor 0 Network 0 = P0W pin is disconnected from the Resistor 0 Network
bit 0 R0B: Resistor 0 Terminal B (P0B pin) Connect Control bit
This bit connects/disconnects the Resistor 0 Terminal B to the Resistor 0 Network
1 = P0B pin is connected to the Resistor 0 Network 0 = P0B pin is disconnected from the Resistor 0 Network
Note 1: The hardware SHDN pin (when active) overrides the state of these bits. When the SHDN pin returns to the
inactive state, the TCON register will control the state of the terminals. The SHDN pin does not modify the state of the TCON bits.
2: These bits do not affect the wiper register values.
(1, 2)
(CONTINUED)
DS22060A-page 36 © 2007 Microchip Technology Inc.
MCP413X/415X/423X/425X
RS
A
RS
R
S
RS
B
257
256
255
1
0
RW
(1)
W
(01h)
Analog Mux
RW
(1)
(00h)
RW
(1)
(FEh)
RW
(1)
(FFh)
RW
(1)
(100h)
Note 1: The wiper resistance is dependent on
several factors including, wiper code, device V
DD
, Terminal voltages (on A, B, and W), and temperature. Also for the same conditions, each tap selection resistance has a small variation. This R
W
variation has greater effects on
some specifications (such as INL) for the smaller resistance devices (5.0 kΩ) compared to larger resistance devices (100.0 kΩ).
R
AB
8-Bit
N =
128
127
126
1
0
(01h)
(00h)
(7Eh)
(7Fh)
(80h)
7-Bit
N =
R
S
R
AB
256()
-------------=
R
S
R
AB
128()
------------- -=
8-bit Device
7-bit Device

5.0 RESISTOR NETWORK

The Resistor Network has either 7-bit or 8-bit resolu­tion. Each Resistor Network allows zero scale to full scale connections. Figure 5-1 shows a block diagram for the resistive network of a device.
The Resistor Network is made up of several parts. These include:
• Resistor Ladder
•Wiper
• Shutdown (Terminal Connections)
Devices have either one or two resistor networks, These are referred to as Pot 0 and Pot 1.

5.1 Resistor Ladder Module

The resistor ladder is a series of equal value resistors
) with a connection point (tap) between the two
(R
S
resistors. The total number of resistors in the series (ladder) determines the RAB resistance (see
Figure 5-1). The end points of the resistor ladder are
connected to analog switches which are connected to the device Terminal A and Terminal B pins. The R (and RS) resistance has small variations over voltage and temperature.
For an 8-bit device, there are 256 resistors in a string between terminal A and terminal B. The wiper can be set to tap onto any of these 256 resistors thus providing 257 possible settings (including terminal A and terminal B).
For a 7-bit device, there are 128 resistors in a string between terminal A and terminal B. The wiper can be set to tap onto any of these 128 resistors thus providing 129 possible settings (including terminal A and terminal B).
Equation 5-1 shows the calculation for the step
resistance.
EQUATION 5-1: RS CALCULATION

FIGURE 5-1: Resistor Block Diagram.

© 2007 Microchip Technology Inc. DS22060A-page 37
MCP413X/415X/423X/425X
R
WB
RABN
256()
------------- -R
W
+=
N = 0 to 256 (decimal)
R
WB
RABN
128()
------------- -R
W
+=
N = 0 to 128 (decimal)
8-bit Device
7-bit Device

5.2 Wiper

Each tap point (between the RS resistors) is a connection point for an analog switch. The opposite side of the analog switch is connected to a common signal which is connected to the Terminal W (Wiper) pin.
A value in the volatile wiper register selects which analog switch to close, connecting the W terminal to the selected node of the resistor ladder.
The wiper can connect directly to Terminal B or to Terminal A. A zero-scale connections, connects the Terminal W (wiper) to Terminal B (wiper setting of 000h). A full-scale connections, connects the Terminal W (wiper) to Terminal A (wiper setting of 100h or 80h). In these configurations the only resistance between the Terminal W and the other Terminal (A or B) is that of the analog switches.
A wiper setting value greater than full scale (wiper setting of 100h for 8-bit device or 80h for 7-bit devices) will also be a Full Scale setting (Terminal W (wiper) connected to Terminal A). Ta bl e 5 -1 illustrates the full wiper setting map.
Equation 5-2 illustrates the calculation used to deter-
mine the resistance between the wiper and terminal B.
A POR/BOR event will load the Volatile Wiper register value with the default value. Table 5-2 shows the default values offered. Custom POR/BOR options are available. Contact the local Microchip Sales Office.
TABLE 5-2: DEFAULT FACTORY
SETTINGS SELECTION
Wiper Code
Code
Resistance
-502 5.0 kΩ Mid-scale 80h 40h
-103 10.0 kΩ Mid-scale 80h 40h
-503 50.0 kΩ Mid-scale 80h 40h
-104 100.0 kΩ Mid-scale 80h 40h
Val ue
AB
Typical
R
Default POR
8-bit 7-bit
Wiper Setting
EQUATION 5-2: RWB CALCULATION
TABLE 5-1: VOLATILE WIPER VALUE VS.
Wiper Setting
7-bit Pot 8-bit Pot
3FFh 081h
080h 100h Full Scale (W = A),
07Fh 041h
040h 080h W = N (Mid-Scale) 03Fh
001h 000h 000h Zero Scale (W = B)
WIPER POSITION MAP
Properties
3FFh 101h
0FFh
081
07Fh
001
Reserved (Full Scale (W = A)), Increment and Decrement commands ignored
Increment commands ignored W = N
W = N
Decrement command ignored
DS22060A-page 38 © 2007 Microchip Technology Inc.
MCP413X/415X/423X/425X
A
B
W
Resistor Network
SHDN (from pin)
RxHW (from TCON register)
To Pot x Hardware Shutdown Control

5.3 Shutdown

Shutdown is used to minimize the device’s current consumption. The MCP4XXX has two methods to achieve this. These are:
Hardware Shutdown Pin (SHDN)
Terminal Control Register (TCON)
The Hardware Shutdown pin is backwards compatible with the MCP42XXX devices.
5.3.1 HARDWARE SHUTDOWN PIN (SHDN
The SHDN pin is available on the dual potentiometer devices. When the SHDN
• The P0A and P1A terminals are disconnected
• The P0W and P1W terminals are simultaneously
connect to the P0B and P1B terminals, respec­tively (see Figure 5-2)
• The Serial Interface is NOT disabled, and all
Serial Interface activity is executed
The Hardware Shutdown pin mode does NOT corrupt the values in the Volatile Wiper Registers nor the TCON register. When the Shutdown mode is exited
pin is inactive (VIH)):
(SHDN
• The device returns to the Wiper setting specified
by the Volatile Wiper value
• The TCON register bits return to controlling the
terminal connection state
)
pin is forced active (VIL):
5.3.2 TERMINAL CONTROL REGISTER (TCON)
The Terminal Control (TCON) register is a volatile register used to configure the connection of each resistor network terminal pin (A, B, and W) to the Resistor Network. This register is shown in
Register 4-2.
The RxHW bits forces the selected resistor network into the same state as the SHDN power configurations may be achieved with the RxA, RxW, and RxB bits.
Note: When the RxHW bit forces the resistor
network into the hardware SHDN state, the state of the TCON register RxA, RxW, and RxB bits is overridden (ignored). When the state of the RxHW bit no longer forces the resistor network into the hard­ware SHDN RxW, and RxB bits return to controlling the terminal connection state. In other words, the RxHW bit does not corrupt the state of the RxA, RxW, and RxB bits.
state, the TCON register RxA,
pin. Alternate low
5.3.3 INTERACTION OF SHDN PIN AND TCON REGISTER
Figure 5-3 shows how the SHDN pin signal and the
RxHW bit signal interact to control the hardware shutdown of each resistor network (independently). Using the TCON bits allows each resistor network (Pot 0 and Pot 1) to be individually “shutdown” while the hardware pin forces both resistor networks to be “shut­down” at the same time.

FIGURE 5-2: Hardware Shutdown Resistor Network Configuration.

© 2007 Microchip Technology Inc. DS22060A-page 39

FIGURE 5-3: RxHW bit and SHDN pin Interaction.

MCP413X/415X/423X/425X
NOTES:
DS22060A-page 40 © 2007 Microchip Technology Inc.
MCP413X/415X/423X/425X
SDI/SDO
SDI
SDO
SDO
SDI
200 kΩ
MCP41X1
SCK
SCK
SDI
SDO
MCP4XXX
SDO
SDI
SCK
SCK
( Master Out - Slave In (MOSI) )
( Master In - Slave Out (MISO) )
Host
Controller
Host
Controller
Typical SPI Interface Connections
Typical MCP41X1 SPI Interface Connections (Host Controller Hardware SPI)
SDI/SDO
SDI
SDO
I/O
MCP41X1
I/O
SCK
Host
Controller
Alternate MCP41X1 SPI Interface Connections (Host Controller Firmware SPI)
(SDO/SDI)
(SCK)
CS
I/O
(1)
CS
I/O
(1)
CS
I/O
(1)
Note 1: If High voltage commands are desired, some type of external circuitry needs to be
implemented.

6.0 SERIAL INTERFACE (SPI)

The MCP4XXX devices support the SPI serial protocol. This SPI operates in the slave mode (does not generate the serial clock).
The SPI interface uses up to four pins. These are:
- Chip Select
•CS
• SCK - Serial Clock
• SDI - Serial Data In
• SDO - Serial Data Out
Typical SPI Interfaces are shown in Figure 6-1. In the SPI interface, The Master’s Output pin is connected to the Slave’s Input pin and the Master’s Input pin is connected to the Slave’s Output pin.
The MCP4XXX SPI’s module supports two (of the four)
IHH
).
0,0 and 1,1.
standard SPI modes. These are Mode The SPI mode is determined by the state of the SCK pin (V inactive (VIH) to active (VIL or V
All SPI interface signals are high-voltage tolerant.
or VIL) on the when the CS pin transitions from
IH

FIGURE 6-1: Typical SPI Interface Block Diagram.

© 2007 Microchip Technology Inc. DS22060A-page 41
MCP413X/415X/423X/425X
SDI/SDO
SDI
SDO
Control
“smart” pull-up
Open Drain
Logic

6.1 SDI, SDO, SCK, and CS Operation

The operation of the four SPI interface pins are discussed in this section. These pins are:
• SDI (Serial Data In)
• SDO (Serial Data Out)
• SCK (Serial Clock) (Chip Select)
•CS
The serial interface works on either 8-bit or 16-bit boundaries depending on the selected command. The Chip Select (CS
6.1.1 SERIAL DATA IN (SDI)
The Serial Data In (SDI) signal is the data signal into the device. The value on this pin is latched on the rising edge of the SCK signal.
6.1.2 SERIAL DATA OUT (SDO)
The Serial Data Out (SDO) signal is the data signal out of the device. The value on this pin is driven on the falling edge of the SCK signal.
Once the CS V
), the SDO pin will be driven. The state of the SDO
IHH
pin is determined by the serial bit’s position in the command, the command selected, and if there is a command error state (CMDERR).
) pin frames the SPI commands.
pin is forced to the active level (VIL or
6.1.3 SDI/SDO
Note: MCP41X1 Devices Only .
For device packages that do not have enough pins for both an SDI and SDO pin, the SDI and SDO function­ality is multiplexed onto a single I/O pin called SDI/ SDO.
The SDO will only be driven for the command error bit (CMDERR) and during the data bits of a read command (after the memory address and command has been received).
6.1.3.1 SDI/SDO Operation
Figure 6-2 shows a block diagram of the SDI/SDO pin.
The SDI signal has an internal “smart” pull-up. The value of this pull-up determines the frequency that data can be read from the device. An external pull-up can be added to the SDI/SDO pin to improve the rise time and therefore improve the frequency that data can be read.
Note: To support the High voltage requirement of
the SDI function, the SDO function is an open drain output.
Data written on the SDI/SDO pin can be at the maximum SPI frequency.
Note: Care must be take to ensure that a Drive
conflict does not exist between the Host Controllers SDO pin (or software SDI/SDO pin) and the MCP41x1 SDI/SDO pin (see
Figure 6-1).
On the falling edge of the SCK pin during the C0 bit (see Figure 7-1), the SDI/SDO pin will start outputting the SDO value. The SDO signal overrides the control of the smart pull-up, such that whenever the SDI/SDO pin is outputting data, the smart pull-up is enabled.
The SDI/SDO pin will change from an input (SDI) to an output (SDO) after the state machine has received the Address and Command bits of the Command Byte. If the command is a Read command, then the SDI/SDO pin will remain an output for the remainder of the command. For any other command, the SDI/SDO pin returns to an input.
FIGURE 6-2: Serial I/O Mux Block
DS22060A-page 42 © 2007 Microchip Technology Inc.
Diagram.
MCP413X/415X/423X/425X
6.1.4 SERIAL CLOCK (SCK) (SPI FREQUENCY OF OPERATION)
The SPI interface is specified to operate up to 10 MHz. The actual clock rate depends on the configuration of the system and the serial command used. Table 6-1 shows the SCK frequency for different configurations.

TABLE 6-1: SCK FREQUENCY

Command
Memory Type Access
Volatile Memory
Note 1: MCP41X1 devices only.
SDI, SDO 10 MHz 10 MHz
SDI/SDO
(1)
2: This is the maximum clock frequency
without an external pull-up resistor.
250 kHz
Read
Write,
Increment,
Decrement
(2)
10 MHz
6.1.5 THE CS
The Chip Select (CS) signal is used to select the device and frame a command sequence. To start a command, or sequence of commands, the CS transition from the inactive state (VIH) to an active state
or V
(V
IL
After the CS driven and the clock bit counter is reset.
Note: There is a required delay after the CS pin
If an error condition occurs for an SPI command, then the Command byte’s Command Error (CMDERR) bit (on the SDO pin) will be driven low (V error condition, the user must take the CS pin to the V level.
When the CS SPI module resets (including the address pointer). While the CS interface is ignored. This allows the Host Controller to interface to other SPI devices using the same SDI, SDO, and SCK signals.
The CS is disabled when the voltage on the CS pin is at the V level. This means that when the CS pin is not driven, the internal pull-up resistor will pull this signal to the V level. When the CS pin is driven low (VIL), the resis­tance becomes very large to reduce the device current consumption.
The high voltage capability of the CS MCP413X/415X/423X/425X devices to be used in sys­tems previously designed for the MCP414X/416X/ 424X/426X devices.
).
IHH
signal has gone active, the SDO pin is
goes active to the 1st edge of the SCK pin.
pin returns to the inactive state (VIH) the
pin is in the inactive state (VIH), the serial
pin has an internal pull-up resistor. The resistor
SIGNAL
signal must
). To exit the
IL
pin allows
IH
IL
IH
© 2007 Microchip Technology Inc. DS22060A-page 43
MCP413X/415X/423X/425X
CS
SCK
Write to SSPBUF
SDI
Input Sample
SDO
bit15 bit14 bit13 bit12 bit11 bit10 bit9 bit8 bit7 bit6 bit5 bit4 bit3 bit2 bit1 bit0
bit15 bit14 bit13 bit12 bit9 bit8 bit7 bit6 bit5 bit4 bit3 bit2 bit1 bit0
AD3 AD2 AD1 AD0
C1 C0
X
D8 D7 D6 D5 D4 D3 D2 D1 D0
VIH
V
IL
CMDERR bit
V
IHH
(1)
Note 1: V
IHH
is supported for compability with the MCP414X/6X and MCP424X/6X devices high voltage
operation.
CS
SCK
Write to SSPBUF
SDI
Input Sample
SDO
bit15 bit14 bit13 bit12 bit11 bit10 bit9 bit8 bit7 bit6 bit5 bit4 bit3 bit2 bit1 bit0
bit15 bit14 bit13 bit12 bit9 bit8 bit7 bit6 bit5 bit4 bit3 bit2 bit1 bit0
AD3 AD2 AD1 AD0
C1 C0
X
D8 D7 D6 D5 D4 D3 D2 D1 D0
VIH
V
IL
CMDERR bit
V
IHH
(1)
Note 1: V
IHH
is supported for compability with the MCP414X/6X and MCP424X/6X devices high voltage
operation.

6.2 The SPI Modes

The SPI module supports two (of the four) standard SPI modes. These are Mode 0,0 and 1,1. The mode is determined by the state of the SDI pin on the rising edge of the 1st clock bit (of the 8-bit byte).
6.2.1 MODE 0,0
In Mode 0,0: SCK idle state = low (VIL), data is clocked in on the SDI pin on the rising edge of SCK and clocked out on the SDO pin on the falling edge of SCK.
6.2.2 MODE 1,1
In Mode 1,1: SCK idle state = high (VIH), data is clocked in on the SDI pin on the rising edge of SCK and clocked out on the SDO pin on the falling edge of SCK.

6.3 SPI Waveforms

Figure 6-3 through Figure 6-8 show the different SPI
command waveforms. Figure 6-3 and Figure 6-4 are read and write commands. Figure 6-5 and Figure 6-6 are read commands when the SDI and SDO pins are multiplexed on the same pin (SDI/SDO). Figure 6-7 and Figure 6-8 are increment and decrement commands.

FIGURE 6-3: 16-Bit Commands (Write, Read) - SPI Waveform (Mode 1,1).

FIGURE 6-4: 16-Bit Commands (Write, Read) - SPI Waveform (Mode 0,0).

DS22060A-page 44 © 2007 Microchip Technology Inc.
MCP413X/415X/423X/425X
CS
SCK
Write to SSPBUF
SDI
Input Sample
SDO
bit9 bit8 bit7 bit6 bit5 bit4 bit3 bit2 bit1 bit0
bit15 bit14 bit13 bit12
AD3 AD2 AD1 AD0 C1 C0
D9 D8 D7 D6 D5 D4 D3 D2 D1 D0
V
IH
V
IL
CMDERR bit
(1) (1) (1) (1) (1) (1) (1) (1) (1) (1)
11
V
IHH
(1)
Note 1: The SDI pin will read the state of the SDI pin which will be the SDO signal, unless overdriven.
2: V
IHH
is supported for compability with the MCP414X/6X and MCP424X/6X devices high voltage
operation.
CS
SCK
Write to SSPBUF
SDI
Input Sample
SDO
bit9 bit8 bit7 bit6 bit5 bit4 bit3 bit2 bit1 bit0
bit15 bit14 bit13 bit12
AD3 AD2 AD1 AD0 C1 C0
D8 D7 D6 D5 D4 D3 D2 D1 D0
X
VIH
V
IL
CMDERR bit
(1) (1) (1) (1) (1) (1) (1) (1) (1) (1)
11
V
IHH
(1)
Note 1: The SDI pin will read the state of the SDI pin which will be the SDO signal, unless overdriven.
2: V
IHH
is supported for compability with the MCP414X/6X and MCP424X/6X devices high voltage
operation.
FIGURE 6-5: 16-Bit Read Command for Devices with SDI/SDO multiplexed ­SPI Waveform (Mode 1,1).
FIGURE 6-6: 16-Bit Read Command for Devices with SDI/SDO multiplexed ­SPI Waveform (Mode 0,0).
© 2007 Microchip Technology Inc. DS22060A-page 45
MCP413X/415X/423X/425X
bit7
bit0
bit7
bit6
bit5 bit4
bit3
bit2
bit1 bit0
CS
SCK
Write to SSPBUF
SDI
Input Sample
SDO
V
IH
V
IL
AD3
AD2
AD1
AD0
C0
C1
X
X
“1” = “Valid” Command/Address “0” = “Invalid” Command/Address
CMDERR bit
V
IHH
(1)
Note 1: V
IHH
is supported for compability with the MCP414X/6X and MCP424X/6X devices high voltage
operation.
SCK
Input Sample
SDI
bit7
bit0
SDO bit7
bit6
bit5 bit4
bit3
bit2
bit1 bit0
Write to SSPBUF
CS
VIH
V
IL
AD3
AD2
AD1
AD0
C0
C1
X
X
“1” = “Valid” Command/Address “0” = “Invalid” Command/Address
CMDERR bit
V
IHH
(1)
Note 1: V
IHH
is supported for compability with the MCP414X/6X and MCP424X/6X devices high voltage
operation.

FIGURE 6-7: 8-Bit Commands (Increment, Decrement, Modify - SPI Waveform with PIC MCU (Mode 1,1).

FIGURE 6-8: 8-Bit Commands (Increment, Decrement, Modify - SPI Waveform with PIC MCU (Mode 0,0).

DS22060A-page 46 © 2007 Microchip Technology Inc.
MCP413X/415X/423X/425X
A
D
3
A D
2
A D
1
A D
0
C1C0D9D
8
Memory
Command Byte
Data
Address
Bits
Command
Bits
A D
3
A D
2
A D
1
A D
0
C1C0D9D8D7D6D5D4D3D2D1D
0
Memory
16-bit Command
Data
Address
Bits
Command
Bits
0 0 = Write Data
0 1 = INCR 1 0 = DECR 1 1 = Read Data
C C 1 0
Command
Bits
8-bit Command
Command Byte
Data Byte

7.0 DEVICE COMMANDS

The MCP4XXX’s SPI command format supports 16 memory address locations and four commands. Each command has two modes. These are:
• Normal Serial Commands
• High-Voltage Serial Commands
Normal serial commands are those where the CS driven to V driven to V support the MCP414X/416X/424X/426X devices. High Voltage Serial Commands operate identically to their corresponding Normal Serial Command. In each mode, there are four possible commands. These com­mands are shown in Table 7-1.
The 8-bit commands (Increment Wiper and Decre-
ment Wiper commands) contain a Command Byte,
see Figure 7-1, while 16-bit commands (Read Data and Write Data commands) contain a Command Byte and a Data Byte. The Command Byte contains two data bits, see Figure 7-1.
Table 7-2 shows the supported commands for each
memory location and the corresponding values on the SDI and SDO pins.
Table 7-3 shows an overview of all the SPI commands
and their interaction with other device features.
. High Voltage Serial Commands, CS pin is
IL
, for compatibility with systems that also
IHH
pin is

7.1 Command Byte

The Command Byte has three fields, the Address, the Command, and 2 Data bits, see Figure 7-1. Currently only one of the data bits is defined (D8). This is for the Write command.
The device memory is accessed when the master sends a proper Command Byte to select the desired operation. The memory location getting accessed is contained in the Command Byte’s AD3:AD0 bits. The action desired is contained in the Command Byte’s C1:C0 bits, see Ta bl e 7 - 1. C1:C0 determines if the desired memory location will be read, written, Incremented (wiper setting +1) or Decremented (wiper setting -1). The Increment and Decrement commands are only valid on the volatile wiper registers.
As the Command Byte is being loaded into the device (on the SDI pin), the device’s SDO pin is driving. The SDO pin will output high bits for the first six bits of that command. On the 7th bit, the SDO pin will output the CMDERR bit state (see Section 7.3 “Error Condi- tion”). The 8th bit state depends on the the command selected.

TABLE 7-1: COMMAND BIT OVERVIEW

C1:C0 Bit
States
11
00
01
10
Command # of Bits
Read Data 16-Bits
Write Data 16-Bits
Increment 8-Bits
Decrement 8-Bits

FIGURE 7-1: General SPI Command Formats.

© 2007 Microchip Technology Inc. DS22060A-page 47
MCP413X/415X/423X/425X

TABLE 7-2: MEMORY MAP AND THE SUPPORTED COMMANDS

Address
Value Function
00h Volatile Wiper 0 Write Data nn nnnn nnnn 0000 00nn nnnn nnnn 1111 1111 1111 1111
01h Volatile Wiper 1 Write Data nn nnnn nnnn 0001 00nn nnnn nnnn 1111 1111 1111 1111
02h Reserved
03h Reserved
04h Volatile
TCON Register
05h Status Register Read Data nn nnnn nnnn 0101 11nn nnnn nnnn 1111 111n nnnn nnnn
06h-0Fh Reserved
Note 1: The Data Memory is only 9-bits wide, so the MSb is ignored by the device.
2: All these Address/Command combinations are valid, so the CMDERR bit is set. Any other Address/Command
combination is a command error state and the CMDERR bit will be clear.
Command
Read Data nn nnnn nnnn 0000 11nn nnnn nnnn 1111 111n nnnn nnnn
Increment Wiper 0000 0100 1111 1111
Decrement Wiper 0000 1000 1111 1111
Read Data nn nnnn nnnn 0001 11nn nnnn nnnn 1111 111n nnnn nnnn
Increment Wiper 0001 0100 1111 1111
Decrement Wiper 0001 1000 1111 1111
Write Data nn nnnn nnnn 0100 00nn nnnn nnnn 1111 1111 1111 1111
Read Data nn nnnn nnnn 0100 11nn nnnn nnnn 1111 111n nnnn nnnn
Data
(10-bits)
(1)
MOSI (SDI pin) MISO (SDO pin)
SPI String (Binary)
(2)
DS22060A-page 48 © 2007 Microchip Technology Inc.
MCP413X/415X/423X/425X

7.2 Data Byte

Only the Read Command and the Write Command use the Data Byte, see Figure 7-1. These commands concatenate the 8-bits of the Data Byte with the one data bit (D8) contained in the Command Byte to form 9-bits of data (D8:D0). The Command Byte format supports up to 9-bits of data so that the 8-bit resistor network can be set to Full Scale (100h or greater). This allows wiper connections to Terminal A and to Terminal B.
The D9 bit is currently unused, and corresponds to the position on the SDO data of the CMDERR bit.

7.3 Error Condition

The CMDERR bit indicates if the four address bits received (AD3:AD0) and the two command bits received (C1:C0) are a valid combination (see
Table 4-1). The CMDERR bit is high if the combination
is valid and low if the combination is invalid.
SPI commands that do not have a multiple of 8 clocks are ignored.
Once an error condition has occurred, any following commands are ignored. All following SDO bits will be low until the CMDERR condition is cleared by forcing
pin to the inactive state (VIH).
the CS
7.3.1 ABORTING A TRANSMISSION
All SPI transmissions must have the correct number of SCK pulses to be executed. The command is not executed until the complete number of clocks have been received. If the CS state (V mands are not executed.
SPI is more susceptible to noise than other bus protocols. The most likely case is that this noise corrupts the value of the data being clocked into the MCP4XXX or the SCK pin is injected with extra clock pulses. This may cause data to be corrupted in the device, or a command error to occur, since the address and command bits were not a valid combination. The extra SCK pulse will also cause the SPI data (SDI) and clock (SCK) to be out of sync. Forcing the CS inactive state (VIH) resets the serial interface. The SPI interface will ignore activity on the SDI and SCK pins until the CS (VIH to VIL or VIH to V
) the serial interface is reset. Partial com-
IH
pin transition to the active state is detected
Note 1: When data is not being received by the
MCP4XXX, It is recommended that the
pin be forced to the inactive level (VIL)
CS
2: It is also recommended that long continu-
ous command strings should be broken down into single commands or shorter continuous command strings. This reduces the probability of noise on the SCK pin corrupting the desired SPI commands.
pin is forced to the inactive
).
IHH
pin to the
© 2007 Microchip Technology Inc. DS22060A-page 49
MCP413X/415X/423X/425X

7.4 Continuous Commands

The device supports the ability to execute commands continuously. While the CS or V received.
The following example is a valid sequence of events:
1. CS pin driven active (VIL or V
2. Read Command.
3. Increment Command (Wiper 0).
4. Increment Command (Wiper 0).
5. Decrement Command (Wiper 1).
6. Write Command.
7. Write Command.
8. CS
). Any sequence of valid commands may be
IHH
pin driven inactive (VIH).
pin is in the active state (V
).
IHH
IL
Note 1: It is recommended that while the CS pin is
active, only one type of command should be issued. When changing commands, it is recommended to take the CS inactive then force it back to the active state.
2: It is also recommended that long
command strings should be broken down into shorter command strings. This reduces the probability of noise on the SCK pin corrupting the desired SPI command string.

TABLE 7-3: COMMANDS

High Voltage
Command Name # of Bits
Write Data 16-Bits
Read Data 16-Bits
Increment Wiper 8-Bits
Decrement Wiper 8-Bits
High Voltage Write Data 16-Bits Yes
High Voltage Read Data 16-Bits Yes
High Voltage Increment Wiper 8-Bits Yes
High Voltage Decrement Wiper 8-Bits Yes
(V
IHH
pin?
pin
) on CS
DS22060A-page 50 © 2007 Microchip Technology Inc.
MCP413X/415X/423X/425X
A
D
3
A D 2
A D
1
A D
0
00D9D8D7D6D5D4D3D2D1D
0
1111111111111111Valid Address/Command combination 111111
0 0 0 0 0 0 0 0 0 0 Invalid Address/Command combination
(1)
COMMAND BYTE DATA BYTE
SDI
SDO
Note 1: If an Error Condition occurs (CMDERR = L), all following SDO bits will be low until the CMDERR
condition is cleared (the CS pin is forced to the inactive state).

7.5 Write Data Normal and High Voltage

Note: The High Voltage Write Data command is
supported for compatability with system that also support MCP414X/416X/424X/ 426X devices.
The Write command is a 16-bit command. The format of the command is shown in Figure 7-2.
A Write command to a Volatile memory location changes that location after a properly formatted Write Command (16-clock) have been received.
7.5.1 SINGLE WRITE
The write operation requires that the CS pin be in the
or V
active state (V the inactive state (VIH) and is driven to the active state (VIL). The 16-bit Write Command (Command Byte and Data Byte) is then clocked in on the SCK and SDI pins. Once all 16 bits have been received, the specified volatile address is updated. A write will not occur if the write command isn’t exactly 16 clocks pulses. This protects against system issues from corrupting the memory locations.
Figure 6-3 and Figure 6-4 show possible waveforms
for a single write.
IL
). Typically, the CS pin will be in
IHH

FIGURE 7-2: Write Command - SDI and SDO States.

© 2007 Microchip Technology Inc. DS22060A-page 51
MCP413X/415X/423X/425X
A
D
3
A
D
2
A D 1
A
D
0
00D9D8D7D6D5D4D3D2D1D
0
1111111*111111111
A
D
3
A
D
2
A D 1
A
D
0
00D9D8D7D6D5D4D3D2D1D
0
1111111*111111111
A
D
3
A
D
2
A D 1
A
D
0
00D9D8D7D6D5D4D3D2D1D
0
1111111*111111111
COMMAND BYTE DATA BYTE
SDI
SDO
Note 1: If a Command Error (CMDERR) occurs at this bit location (*), then all following SDO bits will be
driven low until the CS
pin is driven inactive (VIH).
7.5.2 CONTINUOUS WRITES
Continuous writes are possible only when writing to the volatile memory registers (address 00h, 01h, and 04h).
Figure 7-3 shows the sequence for three continuous
writes. The writes do not need to be to the same volatile memory address.

FIGURE 7-3: Continuous Write Sequence.

DS22060A-page 52 © 2007 Microchip Technology Inc.
MCP413X/415X/423X/425X
A D
3
A
D
2
A D
1
A D
0
11XXXXXXXXXX
1111111D8D7D6D5D4D3D2D1D0Valid Address/Command combination
1111110000000000Attempted Memory Read of Reserved
Memory location.
COMMAND BYTE DATA BYTE
SDI
SDO

READ DATA

7.6 Read Data Normal and High Voltage
Note: The High Voltage Read Data command is
supported for compatability with system that also support MCP414X/416X/424X/ 426X devices.
The Read command is a 16-bit command. The format of the command is shown in Figure 7-4.
The first 6-bits of the Read command determine the address and the command. The 7th clock will output the CMDERR bit on the SDO pin. The remaining 9-clocks the device will transmit the 9 data bits (D8:D0) of the specified address (AD3:AD0).
Figure 7-4 shows the SDI and SDO information for a
Read command.
7.6.1 SINGLE READ
The read operation requires that the CS pin be in the
or V
active state (V the inactive state (VIH) and is driven to the active state (VILor V Byte and Data Byte) is then clocked in on the SCK and SDI pins. The SDO pin starts driving data on the 7th bit (CMDERR bit) and the addressed data comes out on the 8th through 16th clocks. Figure 6-3 through
Figure 6-6 show possible waveforms for a single read.
Figure 6-5 and Figure 6-6 show the single read wave-
forms when the SDI and SDO signals are multiplexed on the same pin. For additional information on the mul­tiplexing of these signals, refer to Section 6.1.3 “SDI/ SDO”.
IL
). The 16-bit Read Command (Command
IHH
). Typically, the CS pin will be in
IHH

FIGURE 7-4: Read Command - SDI and SDO States.

© 2007 Microchip Technology Inc. DS22060A-page 53
MCP413X/415X/423X/425X
A
D
3
A
D
2
A
D
1
A
D
0
11XXXXXXXXXX
1111111*D8D7D6D5D4D3D2D1D
0
A
D
3
A
D
2
A
D
1
A
D
0
11XXXXXXXXXX
1111111*D8D7D6D5D4D3D2D1D
0
A
D
3
A
D
2
A
D
1
A
D
0
11XXXXXXXXXX
1111111*D8D7D6D5D4D3D2D1D
0
COMMAND BYTE DATA BYTE
SDI
SDO
Note 1: If a Command Error (CMDERR) occurs at this bit location (*), then all following SDO bits will be
driven low until the CS
pin is driven inactive (VIH).
7.6.2 CONTINUOUS READS
Continuous reads allows the devices memory to be read quickly. Continuous reads are possible to all mem­ory locations.
Figure 7-5 shows the sequence for three continuous
reads. The reads do not need to be to the same memory address.

FIGURE 7-5: Continuous Read Sequence.

DS22060A-page 54 © 2007 Microchip Technology Inc.
MCP413X/415X/423X/425X
A
D
3
A D
2
A
D
1
A
D
0
01XX
1111111*1Note 1, 2 111111
0 0 Note 1, 3
(INCR COMMAND (n+1) )
SDI
SDO
COMMAND BYTE
Note 1: Only functions when writing the volatile
wiper registers (AD3:AD0) 0h and 1h.
2: Valid Address/Command combination.
3: Invalid Address/Command combination
all following SDO bits will be low until the CMDERR condition is cleared. (the CS
pin is forced to the inactive
state).
4: If a Command Error (CMDERR) occurs
at this bit location (*), then all following SDO bits will be driven low until the CS pin is driven inactive (VIH).

7.7 Increment Wiper

Normal and High Voltage
Note: The High Voltage Increment Wiper
command is supported for compatability with system that also support MCP414X/ 416X/424X/426X devices.
The Increment Command is an 8-bit command. The Increment Command can only be issued to wiper memory locations. The format of the command is shown in Figure 7-6.
An Increment Command to the wiper memory location changes that location after a properly formatted com­mand (8-clocks) have been received.
Increment commands provide a quick and easy method to modify the value of the wiper location by +1 with minimal overhead.
7.7.1 SINGLE INCREMENT
Typically, the CS pin starts at the inactive state (VIH), but may be already be in the active state due to the completion of another command.
Figure 6-7 through Figure 6-8 show possible
waveforms for a single increment. The increment operation requires that the CS (VILor V state (V The 8-bit Increment Command (Command Byte) is then clocked in on the SDI pin by the SCK pins. The SDO pin drives the CMDERR bit on the 7th clock.
The wiper value will increment up to 100h on 8-bit devices and 80h on 7-bit devices. After the wiper value has reached Full Scale (8-bit =100h, 7-bit =80h), the wiper value will not be incremented further. If the Wiper register has a value between 101h and 1FFh, the Increment command is disabled. See Table 7-4 for additional information on the Increment Command versus the current volatile wiper value.
The Increment operations only require the Increment command byte while the CS for a single increment.
After the wiper is incremented to the desired position, the CS unexpected transitions on the SCK pin do not cause the wiper setting to change. Driving the CS should occur as soon as possible (within device specifications) after the last desired increment occurs.
). Typically, the CS pin will be in the inactive
IHH
) and is driven to the active state (VILor V
IH
pin should be forced to VIH to ensure that
pin be in the active state
pin is active (VIL or V
pin to V
IHH
IHH
).
)
IH
FIGURE 7-6: Increment Command ­SDI and SDO States.
© 2007 Microchip Technology Inc. DS22060A-page 55
TABLE 7-4: INCREMENT OPERATION VS.
VOLATILE WIPER VALUE
Current Wiper
Setting
7-bit
Pot
3FFh
081h 080h 100h Full Scale (W = A) No 07Fh
041h 040h 080h W = N (Mid-Scale) Yes 03Fh
001h 000h 000h Zero Scale (W = B) Yes
8-bit
Pot
3FFh 101h
0FFh
081
07Fh
001
Wiper (W)
Properties
Reserved (Full Scale (W = A))
W = N
W = N
Increment Command
Operates?
No
MCP413X/415X/423X/425X
A D
3
A D
2
A
D
1
A
D
0
01XXA
D
3
A D 2
A
D
1
A
D
0
01XXA
D
3
A D 2
A D
1
A
D
0
01XX
1111111*11111111*11111111*1Note 1, 2 111111
0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 Note 3, 4
11111111111111
0 0 0 0 0 0 0 0 0 0 Note 3, 4
11111111111111111111110 0 Note 3, 4
(INCR COMMAND (n+1) ) (INCR COMMAND (n+2) )
(INCR COMMAND (n+3) )
SDI
SDO
COMMAND BYTE
COMMAND BYTE
COMMAND BYTE
Note 1: Only functions when writing the volatile wiper registers (AD3:AD0) 0h and 1h.
2: Valid Address/Command combination.
3: Invalid Address/Command combination.
4: If an Error Condition occurs (CMDERR = L), all following SDO bits will be low until the CMDERR
condition is cleared (the CS
pin is forced to the inactive state).
7.7.2 CONTINUOUS INCREMENTS
Continuous Increments are possible only when writing to the wiper registers.
Figure 7-7 shows a Continuous Increment sequence
for three continuous writes. The writes do not need to be to the same volatile memory address.
When executing an continuous Increment commands, the selected wiper will be altered from n to n+1 for each Increment command received. The wiper value will increment up to 100h on 8-bit devices and 80h on 7-bit devices. After the wiper value has reached Full Scale (8-bit =100h, 7-bit =80h), the wiper value will not be incremented further. If the Wiper register has a value between 101h and 1FFh, the Increment command is disabled.
Increment commands can be sent repeatedly without raising CS the Volatile Wiper register can be read using a Read Command.
When executing a continuous command string, The Increment command can be followed by any other valid command.
The wiper terminal will move after the command has been received (8th clock).
After the wiper is incremented to the desired position, the CS unexpected transitions (on the SCK pin do not cause the wiper setting to change). Driving the CS should occur as soon as possible (within device specifications) after the last desired increment occurs.
until a desired condition is met. The value in
pin should be forced to VIH to ensure that
pin to V
IH

FIGURE 7-7: Continuous Increment Command - SDI and SDO States.

DS22060A-page 56 © 2007 Microchip Technology Inc.
MCP413X/415X/423X/425X
A D
3
A D
2
A D 1
A D
0
10XX
1111111*1Note 1, 2 111111
0 0 Note 1, 3
(DECR COMMAND (n+1))
SDI
SDO
COMMAND BYTE
Note 1: Only functions when writing the volatile
wiper registers (AD3:AD0) 0h and 1h.
2: Valid Address/Command combination.
3: Invalid Address/Command combination
all following SDO bits will be low until the CMDERR condition is cleared. (the CS
pin is forced to the inactive
state).
4: If a Command Error (CMDERR) occurs
at this bit location (*), then all following SDO bits will be driven low until the CS pin is driven inactive (VIH).

7.8 Decrement Wiper

Normal and High Voltage
Note: The High Voltage Decrement Wiper
command is supported for compatability with system that also support MCP414X/ 416X/424X/426X devices.
The Decrement Command is an 8-bit command. The Decrement Command can only be issued to wiper memory locations. The format of the command is shown in Figure 7-6.
An Decrement Command to the wiper memory location changes that location after a properly formatted com­mand (8-clocks) have been received.
Decrement commands provide a quick and easy method to modify the value of the wiper location by -1 with minimal overhead.
7.8.1 SINGLE DECREMENT
Typically the CS pin starts at the inactive state (VIH), but may be already be in the active state due to the com­pletion of another command.
Figure 6-7 through Figure 6-8 show possible
waveforms for a single Decrement. The decrement operation requires that the CS (VILor V state (V Then the 8-bit Decrement Command (Command Byte) is clocked in on the SDI pin by the SCK pins. The SDO pin drives the CMDERR bit on the 7th clock.
The wiper value will decrement from the wipers Full Scale value (100h on 8-bit devices and 80h on 7-bit devices). Above the wipers Full Scale value (8-bit =101h to 1FFh, 7-bit = 81h to FFh), the decrement command is disabled. If the Wiper register has a Zero Scale value (000h), then the wiper value will not decrement. See Tab le 7 - 4 for additional information on the Decrement Command vs. the current volatile wiper value.
The Decrement commands only require the Decrement command byte, while the CS for a single decrement.
After the wiper is decremented to the desired position, the CS unexpected transitions on the SCK pin do not cause the wiper setting to change. Driving the CS should occur as soon as possible (within device specifications) after the last desired decrement occurs.
). Typically the CS pin will be in the inactive
IHH
) and is driven to the active state (VILor V
IH
pin should be forced to VIH to ensure that
pin be in the active state
IHH
pin is active (VIL or V
pin to V
IHH
).
)
IH
FIGURE 7-8: Decrement Command ­SDI and SDO States.
© 2007 Microchip Technology Inc. DS22060A-page 57
TABLE 7-5: DECREMENT OPERATION VS.
VOLATILE WIPER VALUE
Current Wiper
Setting
7-bit
Pot
3FFh
081h 080h 100h Full Scale (W = A) Yes 07Fh
041h 040h 080h W = N (Mid-Scale) Yes 03Fh
001h 000h 000h Zero Scale (W = B) No
8-bit
Pot
3FFh 101h
0FFh
081
07Fh
001
Wiper (W)
Properties
Reserved (Full Scale (W = A))
W = N
W = N
Decrement
Command
Operates?
No
MCP413X/415X/423X/425X
A D
3
A D
2
A
D
1
A
D
0
10XXA
D
3
A D 2
A
D
1
A
D
0
10XXA
D
3
A D 2
A D
1
A D
0
10XX
1111111*11111111*11111111*1Note 1, 2 111111
0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 Note 3, 4
11111111111111
0 0 0 0 0 0 0 0 0 0 Note 3, 4
1111111111111111111111
0 0 Note 3, 4
(DECR COMMAND (n-1) ) (DECR COMMAND (n-1) )
(DECR COMMAND (n-1) )
SDI
SDO
COMMAND BYTE
COMMAND BYTE
COMMAND BYTE
Note 1: Only functions when writing the volatile wiper registers (AD3:AD0) 0h and 1h.
2: Valid Address/Command combination.
3: Invalid Address/Command combination.
4: If an Error Condition occurs (CMDERR = L), all following SDO bits will be low until the CMDERR
condition is cleared (the CS
pin is forced to the inactive state).
7.8.2 CONTINUOUS DECREMENTS
Continuous Decrements are possible only when writing to the wiper registers.
Figure 7-9 shows a continuous Decrement sequence
for three continuous writes. The writes do not need to be to the same volatile memory address.
When executing an continuous Decrement commands, the selected wiper will be altered from n to n-1 for each Decrement command received. The wiper value will decrement from the wipers Full Scale value (100h on 8-bit devices and 80h on 7-bit devices). Above the wipers Full Scale value (8-bit =101h to 1FFh, 7-bit = 81h to FFh), the decrement command is disabled. If the Wiper register has a Zero Scale value (000h), then the wiper value will not decrement. See
Table 7-4 for additional information on the Decrement
Command vs. the current volatile wiper value.
Decrement commands can be sent repeatedly without raising CS the Volatile Wiper register can be read using a Read Command.
When executing a continuous command string, The Decrement command can be followed by any other valid command.
The wiper terminal will move after the command has been received (8th clock).
After the wiper is decremented to the desired position, the CS “unexpected” transitions (on the SCK pin do not cause the wiper setting to change). Driving the CS should occur as soon as possible (within device specifications) after the last desired decrement occurs.
until a desired condition is met. The value in
pin should be forced to VIH to ensure that
pin to V
IH

FIGURE 7-9: Continuous Decrement Command - SDI and SDO States.

DS22060A-page 58 © 2007 Microchip Technology Inc.
MCP413X/415X/423X/425X
Volta ge Regulator
5V
3V
PIC MCU
MCP4XXX
SDI CS SCK
SHDN
SDI
CS
SCK
SHDN
SDO
SDO
Voltage Regulator
3V
5V
PIC MCU
MCP4XXX
SDI CS SCK
SHDN
SDI
CS
SCK
SHDN
SDO
SDO

8.0 APPLICATIONS EXAMPLES

Digital potentiometers have a multitude of practical uses in modern electronic circuits. The most popular uses include precision calibration of set point thresh­olds, sensor trimming, LCD bias trimming, audio atten­uation, adjustable power supplies, motor control overcurrent trip setting, adjustable gain amplifiers and offset trimming. The MCP413X/415X/423X/425X devices can be used to replace the common mechani­cal trim pot in applications where the operating and terminal voltages are within CMOS process limitations
= 2.7V to 5.5V).
(V
DD

8.1 Split Rail Applications

All inputs that would be used to interface to a Host Controller support High Voltage on their input pin. This allows the MCP4XXX device to be used in split power rail applications.
An example of this is a battery application where the
®
MCU is directly powered by the battery supply
PIC (4.8V) and the MCP4XXX device is powered by the
3.3V regulated voltage.
For SPI applications, these inputs are:
•CS
•SCK
• SDI (or SDI/SDO)
SHDN
Figure 8-1 through Figure 8-2 show three example split
rail systems. In this system, the MCP4XXX interface input signals need to be able to support the PIC MCU output high voltage (V
In Example #1 (Figure 8-1), the MCP4XXX interface input signals need to be able to support the PIC MCU output high voltage (V becomes too large, then the customer may be required to do some level shifting due to MCP4XXX V related to Host Controller VIH levels.
In Example #2 (Figure 8-2), the MCP4XXX interface input signals need to be able to support the lower volt­age of the PIC MCU output high voltage level (V
Table 8-1 shows an example PIC microcontroller I/O
voltage specifications and the MCP4XXX specifica­tions. So this PIC MCU operating at 3.3V will drive a
at 2.64V, and for the MCP4XXX operating at 5.5V,
V
OH
is 2.47V. Therefore, the interface signals meet
the V
IH
specifications.
).
OH
). If the split rail voltage delta
OH
OH
levels
).
OH

FIGURE 8-1: Example Split Rail System 1.

FIGURE 8-2: Example Split Rail System 2.

TABLE 8-1: V
(1)
PIC
MCP4XXX
V
DDVIH VOHVDDVIH
5.5 4.4 4.4 2.7 1.215 —
5.0 4.0 4.0 3.0 1.35
4.5 3.6 3.6 3.3 1.485 —
3.3 2.64 2.64 4.5 2.025 —
3.0 2.4 2.4 5.0 2.25
2.7 2.16 2.16 5.5 2.475 — Note 1: V
OH
V
OL
VIH minimum = 0.8 * VDD;
maximum = 0.2 * VDD;
V
IL
2: V
OH
V
OL
minimum = 0.45 * VDD;
V
IH
VIL maximum = 0.2 * VDD
3: The only MCP4XXX output pin is SDO,
which is Open-Drain (or Open-Drain with Internal Pull-up) with High Voltage Support
- VIH COMPARISONS
OH
V
(2)
OH
(3)
(3)
(3)
(3)
(3)
(3)
minimum = 0.8 * VDD;
maximum = 0.6V
minimum (SDA only) =;
maximum = 0.2 * VDD
Comment
© 2007 Microchip Technology Inc. DS22060A-page 59
MCP413X/415X/423X/425X
CS
PIC MCU
MCP402X
R1
IO1
IO2
C2
TC1240A
V
IN
SHDN
C+
C-
V
OUT
C
1
CS
PIC10F206
MCP4XXX
R1
GP0
GP2
C2
C1
Balance Bias
W
B
Input
Input
To b a s e of Transistor (or Amplifier)
A
Common B
Common A
8.2 Techniques to force the CS pin to V
IHH
The circuit in Figure 8-3 shows a method using the TC1240A doubling charge pump. When the SHDN pin is high, the TC1240A is off, and the level on the CS
pin is controlled by the PIC® microcontrollers (MCUs) IO2 pin.
When the SHDN pin is low, the TC1240A is on and the
voltage is 2 * VDD. The resistor R1 allows the CS
V
OUT
pin to go higher than the voltage such that the PIC MCU’s IO2 pin “clamps” at approximately V
DD.
FIGURE 8-4: MCP4XXX Non-Volatile Digital Potentiometer Evaluation Board (MCP402XEV) implementation to generate the V
voltage.
IHH

8.3 Using Shutdown Modes

Figure 8-5 shows a possible application circuit where
the independent terminals could be used. Disconnect­ing the wiper allows the transistor input to be taken to the Bias voltage level (disconnecting A and or B may be desired to reduce system current). Disconnecting Ter­minal A modifies the transistor input by the R stat value to the Common B. Disconnecting Terminal B modifies the transistor input by the RAW rheostat value
FIGURE 8-3: Using the TC1240A to generate the V
The circuit in Figure 8-4 shows the method used on the MCP402X Non-volatile Digital Potentiometer Evalua­tion Board (Part Number: MCP402XEV). This method requires that the system voltage be approximately 5V. This ensures that when the PIC10F206 enters a brown-out condition, there is an insufficient voltage level on the CS wiper. The MCP402X Non-volatile Digital Potentiome­ter Evaluation Board User’s Guide (DS51546) contains a complete schematic.
GP0 is a general purpose I/O pin, while GP2 can either be a general purpose I/O pin or it can output the internal clock.
For the serial commands, configure the GP2 pin as an input (high impedance). The output state of the GP0 pin will determine the voltage on the CS
For high-voltage serial commands, force the GP0 output pin to output a high level (V GP2 pin to output the internal clock. This will form a charge pump and increase the voltage on the CS (when the system voltage is approximately 5V).
DS22060A-page 60 © 2007 Microchip Technology Inc.
voltage.
IHH
pin to change the stored value of the
pin (VIL or VIH).
) and configure the
OH
pin
to the Common A. The Common A and Common B connections could be connected to V
and VSS.
DD

FIGURE 8-5: Example Application Circuit using Terminal Disconnects.

BW
rheo-
MCP413X/415X/423X/425X
V
DD
V
DD
V
V
MCP413X/415X/
423X/425X
0.1 µF
PIC
®
Microcontroller
0.1 µF
U/D
CS
W
B
A

8.4 Design Considerations

In the design of a system with the MCP4XXX devices, the following considerations should be taken into account:
Power Supply Considerations
Layout Considerations
8.4.1 POWER SUPPLY CONSIDERATIONS
The typical application will require a bypass capacitor in order to filter high-frequency noise, which can be induced onto the power supply's traces. The bypass capacitor helps to minimize the effect of these noise sources on signal integrity. Figure 8-6 illustrates an appropriate bypass strategy.
In this example, the recommended bypass capacitor value is 0.1 µF. This capacitor should be placed as
DD
DD
) as
and
close (within 4 mm) to the device power pin (V possible.
The power source supplying these devices should be as clean as possible. If the application circuit has separate digital and analog power supplies, V
should reside on the analog plane.
V
8.4.2 LAYOUT CONSIDERATIONS
Inductively-coupled AC transients and digital switching noise can degrade the input and output signal integrity, potentially masking the MCP4XXX’s performance. Careful board layout minimizes these effects and increases the Signal-to-Noise Ratio (SNR). Multi-layer boards utilizing a low-inductance ground plane, isolated inputs, isolated outputs and proper decoupling are critical to achieving the performance that the silicon is capable of providing. Particularly harsh environ­ments may require shielding of critical signals.
If low noise is desired, breadboards and wire-wrapped boards are not recommended.
8.4.3 RESISTOR TEMPCO
Characterization curves of the resistor temperature coefficient (Tempco) are shown in Figure 2-11,
Figure 2-24, Figure 2-36, and Figure 2-48.
These curves show that the resistor network is designed to correct for the change in resistance as temperature increases. This technique reduces the end to end change is R
resistance.
8.4.4 HIGH VOLTAGE TOLERANT PINS
High Voltage support (V supports two features. These are:
• In-Circuit Accommodation of split rail applications and power supply sync issues
• Compatability with systems that also support MCP414X/416X /424X/426X devices
) on the Serial Interface pins
IHH

FIGURE 8-6: Typical Microcontroller Connections.

© 2007 Microchip Technology Inc. DS22060A-page 61
MCP413X/415X/423X/425X
NOTES:
DS22060A-page 62 © 2007 Microchip Technology Inc.
MCP413X/415X/423X/425X

9.0 DEVELOPMENT SUPPORT

9.1 Development Tools

Several development tools are available to assist in your design and evaluation of the MCP4XXX devices. The currently available tools are shown in Ta bl e 9 -1 .
These boards may be purchased directly from the Microchip web site at www.microchip.com.

9.2 Technical Documentation

Several additional technical documents are available to assist you in your design and development. These technical documents include Application Notes, Tech­nical Briefs, and Design Guides. Table 9-2 shows some of these documents.

TABLE 9-1: DEVELOPMENT TOOLS

Board Name Part # Supported Devices
MCP4XXX Digital Potentiometer Daughter Board
8-pin SOIC/MSOP/TSSOP/DIP Evaluation Board SOIC8EV Any 8-pin device in DIP, SOIC, MSOP,
14-pin SOIC/MSOP/DIP Evaluation Board SOIC14EV Any 14-pin device in DIP, SOIC, or
Note 1: Requires the use of a PICDEM Demo board (see User’s Guide for details)
(1)
MCP4XXXDM-DB MCP42XXX, MCP42XX, MCP4021,
and MCP4011
or TSSOP package
MSOP package

TABLE 9-2: TECHNICAL DOCUMENTATION

Application Note Number
AN1080 Understanding Digital Potentiometers Resistor Variations DS01080
AN737 Using Digital Potentiometers to Design Low Pass Adjustable Filters DS00737
AN692 Using a Digital Potentiometer to Optimize a Precision Single Supply Photo Detect DS00692
AN691 Optimizing the Digital Potentiometer in Precision Circuits DS00691
AN219 Comparing Digital Potentiometers to Mechanical Potentiometers DS00219
Digital Potentiometer Design Guide DS22017
Signal Chain Design Guide DS21825
Title Literature #
© 2007 Microchip Technology Inc. DS22060A-page 63
MCP413X/415X/423X/425X
NOTES:
DS22060A-page 64 © 2007 Microchip Technology Inc.

10.0 PACKAGING INFORMATION

Legend: XX...X Customer-specific information
Y Year code (last digit of calendar year) YY Year code (last 2 digits of calendar year) WW Week code (week of January 1 is week ‘01’) NNN Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) * This package is Pb-free. The Pb-free JEDEC designator ( )
can be found on the outer packaging for this package.
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available characters for customer-specific information.
3
e
8-Lead DFN (3x3)
Example
:
Part Number Code Part Number Code
MCP4131-502E/MF DAAE MCP4132-502E/MF DAAY
MCP4131-103E/MF DAAF MCP4132-103E/MF DAAZ
MCP4131-104E/MF DAAH MCP4132-104E/MF DABB
MCP4131-503E/MF DAAG MCP4132-503E/MF DABA
MCP4151-502E/MF DAAP MCP4152-502E/MF DAAA
MCP4151-103E/MF DAAQ MCP4152-103E/MF DAAB
MCP4151-104E/MF DAAS MCP4152-104E/MF DAAD
MCP4151-503E/MF DAAR MCP4152-503E/MF DAAC
DAAE E733
256
XXXX XYWW
NNN
8-Lead MSOP
XXXXXX
YWWNNN
Example
413152
733256
Part Number Code Part Number Code
MCP4131-502E/MS 413152 MCP4132-502E/MS 413252
MCP4131-103E/MS 413113 MCP4132-103E/MS 413213
MCP4131-104E/MS 413114 MCP4132-104E/MS 413214
MCP4131-503E/MS 413153 MCP4132-503E/MS 413253
MCP4151-502E/MS 415152 MCP4152-502E/MS 415252
MCP4151-103E/MS 415113 MCP4152-103E/MS 415213
MCP4151-104E/MS 415114 MCP4152-104E/MS 415214
MCP4151-503E/MS 415153 MCP4152-503E/MS 415253
XXXXXNNN
8-Lead PDIP
XXXXXXXX
YYWW
E/P 256
Example
4131-502
0733
3
e
8-Lead SOIC
XXXXXXXX
XXXXYYWW
NNN
Example
4131502E
SN^^^0733
256

10.1 Package Marking Information

MCP413X/415X/423X/425X
3
e
© 2007 Microchip Technology Inc. DS22060A-page 65
3
e
MCP413X/415X/423X/425X
10-Lead DFN (3x3)
Example
:
Part Number Code Part Number Code
MCP4232-502E/MF BAEH MCP4252-502E/MF BAES
MCP4232-103E/MF BAEJ MCP4252-103E/MF BAET
MCP4232-104E/MF BAEL MCP4252-104E/MF BAEV
MCP4232-503E/MF BAEK MCP4252-503E/MF BAEU
BAEH
0733
256
XXXX
YYWW
NNN
10-Lead MSOP
XXXXXX
YWWNNN
Example
423252
733256
Part Number Code Part Number Code
MCP4232-502E/MS 423252 MCP4252-502E/MS 425252
MCP4232-103E/MS 423213 MCP4252-103E/MS 425213
MCP4232-104E/MS 423214 MCP4252-104E/MS 425214
MCP4232-503E/MS 423253 MCP4252-503E/MS 425253
14-Lead TSSOP
XXXXXXXX
YYWW
NNN
Example
4251502E
0733
256
XXXXX
16-Lead QFN
XXXXXX
YYWWNNN
Example
14-Lead SOIC (.150”)
XXXXXXXXXXX XXXXXXXXXXX
YYWWNNN
Example
MCP4251 502E/SL^^
0733256
XXXXXX
4251
502
0733256
E/ML^^
14-Lead PDIP
XXXXXXXXXXXXXX XXXXXXXXXXXXXX
YYWWNNN
Example
MCP4251 502E/P^^
0733256
Package Marking Information (Continued)
e
3
3
e
DS22060A-page 66 © 2007 Microchip Technology Inc.
3
e
MCP413X/415X/423X/425X
8-Lead Plastic Dual Flat, No Lead Package (MF) – 3x3x0.9 mm Body [DFN]
Notes:
1. Pin 1 visual index feature may vary, but must be located within the hatched area.
2. Package may have one or more exposed tie bars at ends.
3. Package is saw singulated.
4. Dimensioning and tolerancing per ASME Y14.5M. BSC: Basic Dimension. Theoretically exact value shown without tolerances. REF: Reference Dimension, usually without tolerance, for information purposes only.
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Units MILLIMETERS
Dimension Limits MIN NOM MAX Number of Pins N 8 Pitch e 0.65 BSC Overall Height A 0.80 0.90 1.00 Standoff A1 0.00 0.02 0.05 Contact Thickness A3 0.20 REF Overall Length D 3.00 BSC Exposed Pad Width E2 0.00 1.60 Overall Width E 3.00 BSC Exposed Pad Length D2 0.00 2.40 Contact Width b 0.25 0.30 0.35 Contact Length L 0.20 0.30 0.55 Contact-to-Exposed Pad K 0.20
BOTTOM VIEW
TOP VIEW
D
N
E
NOTE 1
12
EXPOSED PAD
b
e
N
L
E2
K
NOTE 1
D2
21
NOTE 2
A
A1
A3
Microchip Technology Drawing C04-062B
© 2007 Microchip Technology Inc. DS22060A-page 67
MCP413X/415X/423X/425X
8-Lead Plastic Micro Small Outline Package (MS) [MSOP]
Notes:
1. Pin 1 visual index feature may vary, but must be located within the hatched area.
2. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.15 mm per side.
3. Dimensioning and tolerancing per ASME Y14.5M. BSC: Basic Dimension. Theoretically exact value shown without tolerances. REF: Reference Dimension, usually without tolerance, for information purposes only.
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Units MILLIMETERS
Dimension Limits MIN NOM MAX Number of Pins N 8 Pitch e 0.65 BSC Overall Height A 1.10 Molded Package Thickness A2 0.75 0.85 0.95 Standoff A1 0.00 0.15 Overall Width E 4.90 BSC Molded Package Width E1 3.00 BSC Overall Length D 3.00 BSC Foot Length L 0.40 0.60 0.80 Footprint L1 0.95 REF Foot Angle φ Lead Thickness c 0.08 0.23 Lead Width b 0.22 0.40
D
N
E
E1
NOTE 1
1
2
e
b
A
A1
A2
c
L1
L
φ
Microchip Technology Drawing C04-111B
DS22060A-page 68 © 2007 Microchip Technology Inc.
MCP413X/415X/423X/425X
8-Lead Plastic Dual In-Line (P) – 300 mil Body [PDIP]
Notes:
1. Pin 1 visual index feature may vary, but must be located with the hatched area.
2. § Significant Characteristic.
3. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" per side.
4. Dimensioning and tolerancing per ASME Y14.5M. BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Units INCHES
Dimension Limits MIN NOM MAX Number of Pins N 8 Pitch e .100 BSC Top to Seating Plane A .210 Molded Package Thickness A2 .115 .130 .195 Base to Seating Plane A1 .015 – Shoulder to Shoulder Width E .290 .310 .325 Molded Package Width E1 .240 .250 .280 Overall Length D .348 .365 .400 Tip to Seating Plane L .115 .130 .150 Lead Thickness c .008 .010 .015 Upper Lead Width b1 .040 .060 .070 Lower Lead Width b .014 .018 .022 Overall Row Spacing § eB .430
N
E1
NOTE 1
D
12
3
A
A1
A2
L
b1
b
e
E
eB
c
Microchip Technology Drawing C04-018B
© 2007 Microchip Technology Inc. DS22060A-page 69
MCP413X/415X/423X/425X
8-Lead Plastic Small Outline (SN) – Narrow, 3.90 mm Body [SOIC]
Notes:
1. Pin 1 visual index feature may vary, but must be located within the hatched area.
2. § Significant Characteristic.
3. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.15 mm per side.
4. Dimensioning and tolerancing per ASME Y14.5M. BSC: Basic Dimension. Theoretically exact value shown without tolerances.
REF: Reference Dimension, usually without tolerance, for information purposes only.
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Units MILLIMETERS
Dimension Limits MIN NOM MAX Number of Pins N 8 Pitch e 1.27 BSC Overall Height A 1.75 Molded Package Thickness A2 1.25 – Standoff
§ A1 0.10 0.25
Overall Width E 6.00 BSC Molded Package Width E1 3.90 BSC Overall Length D 4.90 BSC Chamfer (optional) h 0.25 0.50 Foot Length L 0.40 1.27 Footprint L1 1.04 REF Foot Angle φ Lead Thickness c 0.17 0.25 Lead Width b 0.31 0.51 Mold Draft Angle Top α 15° Mold Draft Angle Bottom β 15°
D
N
e
E
E1
NOTE 1
12 3
b
A
A1
A2
L
L1
c
h
h
φ
β
α
Microchip Technology Drawing C04-057B
DS22060A-page 70 © 2007 Microchip Technology Inc.
MCP413X/415X/423X/425X
10-Lead Plastic Dual Flat, No Lead Package (MF) – 3x3x0.9 mm Body [DFN]
Notes:
1. Pin 1 visual index feature may vary, but must be located within the hatched area.
2. Package may have one or more exposed tie bars at ends.
3. Package is saw singulated.
4. Dimensioning and tolerancing per ASME Y14.5M. BSC: Basic Dimension. Theoretically exact value shown without tolerances. REF: Reference Dimension, usually without tolerance, for information purposes only.
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Units MILLIMETERS
Dimension Limits MIN NOM MAX Number of Pins N 10 Pitch e 0.50 BSC Overall Height A 0.80 0.90 1.00 Standoff A1 0.00 0.02 0.05 Contact Thickness A3 0.20 REF Overall Length D 3.00 BSC Exposed Pad Length D2 2.20 2.35 2.48 Overall Width E 3.00 BSC Exposed Pad Width E2 1.40 1.58 1.75 Contact Width b 0.18 0.25 0.30 Contact Length L 0.30 0.40 0.50 Contact-to-Exposed Pad K 0.20
D
N
NOTE 1
1
2
E
b
e
N
L
E2
NOTE 1
1
2
D2
K
EXPOSED
PAD
BOTTOM VIEW
TOP VIEW
A3
A1
A
NOTE 2
Microchip Technology Drawing C04-063B
© 2007 Microchip Technology Inc. DS22060A-page 71
MCP413X/415X/423X/425X
10-Lead Plastic Micro Small Outline Package (UN) [MSOP]
Notes:
1. Pin 1 visual index feature may vary, but must be located within the hatched area.
2. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.15 mm per side.
3. Dimensioning and tolerancing per ASME Y14.5M. BSC: Basic Dimension. Theoretically exact value shown without tolerances.
REF: Reference Dimension, usually without tolerance, for information purposes only.
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Units MILLIMETERS
Dimension Limits MIN NOM MAX Number of Pins N 10 Pitch e 0.50 BSC Overall Height A 1.10 Molded Package Thickness A2 0.75 0.85 0.95 Standoff A1 0.00 0.15 Overall Width E 4.90 BSC Molded Package Width E1 3.00 BSC Overall Length D 3.00 BSC Foot Length L 0.40 0.60 0.80 Footprint L1 0.95 REF Foot Angle φ Lead Thickness c 0.08 0.23 Lead Width b 0.15 0.33
D
E
E1
N
NOTE 1
1
2
b
e
A
A1
A2
c
L
L1
φ
Microchip Technology Drawing C04-021B
DS22060A-page 72 © 2007 Microchip Technology Inc.
MCP413X/415X/423X/425X
14-Lead Plastic Dual In-Line (P) – 300 mil Body [PDIP]
Notes:
1. Pin 1 visual index feature may vary, but must be located with the hatched area.
2. § Significant Characteristic.
3. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" per side.
4. Dimensioning and tolerancing per ASME Y14.5M. BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Units INCHES
Dimension Limits MIN NOM MAX Number of Pins N 14 Pitch e .100 BSC Top to Seating Plane A .210 Molded Package Thickness A2 .115 .130 .195 Base to Seating Plane A1 .015 – Shoulder to Shoulder Width E .290 .310 .325 Molded Package Width E1 .240 .250 .280 Overall Length D .735 .750 .775 Tip to Seating Plane L .115 .130 .150 Lead Thickness c .008 .010 .015 Upper Lead Width b1 .045 .060 .070 Lower Lead Width b .014 .018 .022 Overall Row Spacing § eB .430
N
E1
D
NOTE 1
12
3
E
c
eB
A2
L
A
A1
b1
b e
Microchip Technology Drawing C04-005B
© 2007 Microchip Technology Inc. DS22060A-page 73
MCP413X/415X/423X/425X
14-Lead Plastic Small Outline (SL) – Narrow, 3.90 mm Body [SOIC]
Notes:
1. Pin 1 visual index feature may vary, but must be located within the hatched area.
2. § Significant Characteristic.
3. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.15 mm per side.
4. Dimensioning and tolerancing per ASME Y14.5M. BSC: Basic Dimension. Theoretically exact value shown without tolerances.
REF: Reference Dimension, usually without tolerance, for information purposes only.
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Units MILLIMETERS
Dimension Limits MIN NOM MAX Number of Pins N 14 Pitch e 1.27 BSC Overall Height A 1.75 Molded Package Thickness A2 1.25 – Standoff § A 1 0.10 0.25 Overall Width E 6.00 BSC Molded Package Width E1 3.90 BSC Overall Length D 8.65 BSC Chamfer (optional) h 0.25 0.50 Foot Length L 0.40 1.27 Footprint L1 1.04 REF Foot Angle φ Lead Thickness c 0.17 0.25 Lead Width b 0.31 0.51 Mold Draft Angle Top α 15° Mold Draft Angle Bottom β 15°
NOTE 1
N
D
E
E1
1
2 3
b
e
A
A1
A2
L
L1
c
h
h
α
β
φ
Microchip Technology Drawing C04-065B
DS22060A-page 74 © 2007 Microchip Technology Inc.
MCP413X/415X/423X/425X
14-Lead Plastic Thin Shrink Small Outline (ST) – 4.4 mm Body [TSSOP]
Notes:
1. Pin 1 visual index feature may vary, but must be located within the hatched area.
2. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.15 mm per side.
3. Dimensioning and tolerancing per ASME Y14.5M. BSC: Basic Dimension. Theoretically exact value shown without tolerances.
REF: Reference Dimension, usually without tolerance, for information purposes only.
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Units MILLIMETERS
Dimension Limits MIN NOM MAX Number of Pins N 14 Pitch e 0.65 BSC Overall Height A 1.20 Molded Package Thickness A2 0.80 1.00 1.05 Standoff A1 0.05 0.15 Overall Width E 6.40 BSC Molded Package Width E1 4.30 4.40 4.50 Molded Package Length D 4.90 5.00 5.10 Foot Length L 0.45 0.60 0.75 Footprint L1 1.00 REF Foot Angle φ Lead Thickness c 0.09 0.20 Lead Width b 0.19 0.30
NOTE 1
D
N
E
E1
1
2
e
b
c
A
A1
A2
L1
L
φ
Microchip Technology Drawing C04-087B
© 2007 Microchip Technology Inc. DS22060A-page 75
MCP413X/415X/423X/425X
16-Lead Plastic Quad Flat, No Lead Package (ML) – 4x4x0.9 mm Body [QFN]
Notes:
1. Pin 1 visual index feature may vary, but must be located within the hatched area.
2. Package is saw singulated.
3. Dimensioning and tolerancing per ASME Y14.5M. BSC: Basic Dimension. Theoretically exact value shown without tolerances.
REF: Reference Dimension, usually without tolerance, for information purposes only.
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Units MILLIMETERS
Dimension Limits MIN NOM MAX Number of Pins N 16 Pitch e 0.65 BSC Overall Height A 0.80 0.90 1.00 Standoff A1 0.00 0.02 0.05 Contact Thickness A3 0.20 REF Overall Width E 4.00 BSC Exposed Pad Width E2 2.50 2.65 2.80 Overall Length D 4.00 BSC Exposed Pad Length D2 2.50 2.65 2.80 Contact Width b 0.25 0.30 0.35 Contact Length L 0.30 0.40 0.50 Contact-to-Exposed Pad K 0.20
D
E
N
2
1
EXPOSED
PAD
D2
E2
2
1
e
b
K
N
NOTE 1
A3
A1
A
L
TOP VIEW
BOTTOM VIEW
Microchip Technology Drawing C04-127B
DS22060A-page 76 © 2007 Microchip Technology Inc.
MCP413X/415X/423X/425X
APPENDIX A: REVISION HISTORY
Revision A (September 2007)
• Original Release of this Document.
APPENDIX B: MIGRATING FROM
THE MCP41XXX AND MCP42XXX DEVICES
This is intended to give an overview of some of the differences to be aware of when migrating from the MCP41XXX and MCP42XXX devices.
B.1 MCP41XXX to MCP41XX
Differences
Here are some of the differences to be aware of:
1. SI pin is now SDI/SDO pin, and the contents of the device memory can be read.
2. Need to address the Terminal Connect Feature (TCON register) of MCP41XX.
3. MCP41XX supports software Shutdown mode.
4. New 5 kΩ version.
5. MCP41XX have 7-bit resolution options.
6. Alternate pinout versions (for Rheostat configuration).
7. Verify device’s electrical specifications.
8. Interface signals are now high voltage tolerant.
9. Interface signals now have internal pull-up resistors.
B.2 MCP42XXX to MCP42XX
Differences
Here are some of the differences to be aware of:
1. Daisy chaining of devices is no longer supported.
2. SDO pin allows contents of device memory to be read.
3. Need to address the Terminal Connect Feature (TCON register) of MCP42XX.
4. MCP42XX supports software Shutdown mode.
5. New 5 kΩ version.
6. MCP42XX have 7-bit resolution options.
7. Alternate package/pinout versions (for Rheostat configuration).
8. Verify device’s electrical specifications.
9. Interface signals are now high voltage tolerant
10. Interface signals now have internal pull-up resistors.
© 2007 Microchip Technology Inc. DS22060A-page 77
MCP413X/415X/423X/425X
NOTES:
DS22060A-page 78 © 2007 Microchip Technology Inc.
MCP413X/415X/423X/425X
Device: MCP4131: Single Volatile 7-bit Potentiometer
MCP4131T: Single Volatile 7-bit Potentiometer
(Tape and Reel) MCP4132: Single Volatile 7-bit Rheostat MCP4132T: Single Volatile 7-bit Rheostat
(Tape and Reel) MCP4151: Single Volatile 8-bit Potentiometer MCP4151T: Single Volatile 8-bit Potentiometer
(Tape and Reel) MCP4152: Single Volatile 8-bit Rheostat MCP4152T: Single Volatile 8-bit Rheostat
(Tape and Reel) MCP4231: Dual Volatile 7-bit Potentiometer MCP4231T: Dual Volatile 7-bit Potentiometer
(Tape and Reel) MCP4232: Dual Volatile 7-bit Rheostat MCP4232T: Dual Volatile 7-bit Rheostat
(Tape and Reel) MCP4251: Dual Volatile 8-bit Potentiometer MCP4251T: Dual Volatile 8-bit Potentiometer
(Tape and Reel) MCP4252: Dual Volatile 8-bit Rheostat MCP4252T: Dual Volatile 8-bit Rheostat
(Tape and Reel)
Resistance Version: 502 = 5 kΩ
103 = 10 kΩ 503 = 50 kΩ 104 = 100 kΩ
Temperature Range: E = -40°C to +125°C
Package: MF = Plastic Dual Flat No-lead (3x3 DFN), 8/10-lead
ML = Plastic Quad Flat No-lead (QFN), 16-lead MS = Plastic Micro Small Outline (MSOP), 8-lead P = Plastic Dual In-line (PDIP) (300 mil), 8/14-lead SN = Plastic Small Outline (SOIC), (150 mil), 8-lead SL = Plastic Small Outline (SOIC), (150 mil), 14-lead ST = Plastic Thin Shrink Small Outline (TSSOP), 14-lead UN = Plastic Micro Small Outline (MSOP), 10-lead
PAR T N O. X /XX
PackageTemperature
Range
Device
Examples:
a) MCP4131-502E/XX: 5 kΩ, 8LD Device b) MCP4131T-502E/XX: T/R, 5 kΩ, 8LD Device
c) MCP4131-103E/XX: 10 kΩ, 8-LD Device d) MCP4131T-103E/XX: T/R, 10 kΩ, 8LD Device e) MCP4131-503E/XX: 50 kΩ, 8LD Device f) MCP4131T-503E/XX: T/R, 50 kΩ, 8LD Device g) MCP4131-104E/XX: 100 kΩ, 8LD Device h) MCP4131T-104E/XX: T/R, 100 kΩ, 8LD Device
a) MCP4132-502E/XX: 5 kΩ, 8LD Device b) MCP4132T-502E/XX: T/R, 5 kΩ, 8LD Device
c) MCP4132-103E/XX: 10 kΩ, 8-LD Device d) MCP4132T-103E/XX: T/R, 10 kΩ, 8LD Device e) MCP4132-503E/XX: 50 kΩ, 8LD Device f) MCP4132T-503E/XX: T/R, 50 kΩ, 8LD Device g) MCP4132-104E/XX: 100 kΩ, 8LD Device h) MCP4132T-104E/XX: T/R, 100 kΩ, 8LD Device
a) MCP4151-502E/XX: 5 kΩ, 8LD Device b) MCP4151T-502E/XX: T/R, 5 kΩ, 8LD Device
c) MCP4151-103E/XX: 10 kΩ, 8-LD Device d) MCP4151T-103E/XX: T/R, 10 kΩ, 8LD Device e) MCP4151-503E/XX: 50 kΩ, 8LD Device f) MCP4151T-503E/XX: T/R, 50 kΩ, 8LD Device g) MCP4151-104E/XX: 100 kΩ, 8LD Device h) MCP4151T-104E/XX: T/R, 100 kΩ, 8LD Device
a) MCP4152-502E/XX: 5 kΩ, 8LD Device b) MCP4152T-502E/XX: T/R, 5 kΩ, 8LD Device
c) MCP4152-103E/XX: 10 kΩ, 8-LD Device d) MCP4152T-103E/XX: T/R, 10 kΩ, 8LD Device e) MCP4152-503E/XX: 50 kΩ, 8LD Device f) MCP4152T-503E/XX: T/R, 50 kΩ, 8LD Device g) MCP4152-104E/XX: 100 kΩ, 8LD Device h) MCP4152T-104E/XX: T/R, 100 kΩ, 8LD Device
a) MCP4231-502E/XX: 5 kΩ, 8LD Device b) MCP4231T-502E/XX: T/R, 5 kΩ,
8LD Device
c) MCP4231-103E/XX: 10 kΩ, 8-LD Device d) MCP4231T-103E/XX: T/R, 10 kΩ, 8LD Device e) MCP4231-503E/XX: 50 kΩ, 8LD Device f) MCP4231T-503E/XX: T/R, 50 kΩ, 8LD Device g) MCP4231-104E/XX: 100 kΩ, 8LD Device h) MCP4231T-104E/XX: T/R, 100 kΩ, 8LD Device
a) MCP4232-502E/XX: 5 kΩ, 8LD Device b) MCP4232T-502E/XX: T/R, 5 kΩ, 8LD Device
c) MCP4232-103E/XX: 10 kΩ, 8-LD Device d) MCP4232T-103E/XX: T/R, 10 kΩ, 8LD Device e) MCP4232-503E/XX: 50 kΩ, 8LD Device f) MCP4232T-503E/XX: T/R, 50 kΩ, 8LD Device g) MCP4232-104E/XX: 100 kΩ, 8LD Device h) MCP4232T-104E/XX: T/R, 100 kΩ, 8LD Device
a) MCP4251-502E/XX: 5 kΩ, 8LD Device b) MCP4251T-502E/XX: T/R, 5 kΩ, 8LD Device
c) MCP4251-103E/XX: 10 kΩ, 8-LD Device d) MCP4251T-103E/XX: T/R, 10 kΩ, 8LD Device e) MCP4251-503E/XX: 50 kΩ, 8LD Device f) MCP4251T-503E/XX: T/R, 50 kΩ, 8LD Device g) MCP4251-104E/XX: 100 kΩ, 8LD Device h) MCP4251T-104E/XX: T/R, 100 kΩ, 8LD Device
a) MCP4252-502E/XX: 5 kΩ, 8LD Device b) MCP4252T-502E/XX: T/R, 5 kΩ, 8LD Device
c) MCP4252-103E/XX: 10 kΩ, 8-LD Device d) MCP4252T-103E/XX: T/R, 10 kΩ, 8LD Device e) MCP4252-503E/XX: 50 kΩ, 8LD Device f) MCP4252T-503E/XX: T/R, 50 kΩ, 8LD Device g) MCP4252-104E/XX: 100 kΩ, 8LD Device h) MCP4252T-104E/XX: T/R, 100 kΩ, 8LD Device
XX = MF for 8/10-lead 3x3 DFN
= ML for 16-lead QFN = MS for 8-lead MSOP = P for 8/14-lead PDIP = SN for 8-lead SOIC = SL for 14-lead SOIC = ST for 14-lead TSSOP = UN for 10-lead MSOP
XXX
Resistance
Ver sio n
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
© 2007 Microchip Technology Inc. DS22060A-page 79
MCP413X/415X/423X/425X
NOTES:
DS22060A-page 80 © 2007 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
Microchip products meet the specification contained in their particular Microchip Data Sheet.
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions.
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, Accuron, dsPIC, K
EELOQ, KEELOQ logo, microID, MPLAB, PIC,
PICmicro, PICSTART, PRO MATE, rfPIC and SmartShunt are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries.
AmpLab, FilterLab, Linear Active Thermistor, Migratable Memory, MXDEV, MXLAB, SEEVAL, SmartSensor and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, Mindi, MiWi, MPASM, MPLAB Certified logo, MPLIB, MPLINK, PICkit, PICDEM, PICDEM.net, PICLAB, PICtail, PowerCal, PowerInfo, PowerMate, PowerTool, REAL ICE, rfLAB, Select Mode, Smart Serial, SmartTel, Total Endurance, UNI/O, WiperLock and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated in the U.S.A.
All other trademarks mentioned herein are property of their respective companies.
© 2007, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received ISO/TS-16949:2002 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified.
®
MCUs and dsPIC® DSCs, KEELOQ
®
code hopping
© 2007 Microchip Technology Inc. DS22060A-page 81
WORLDWIDE SALES AND SERVICE
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09/10/07
DS22060A-page 82 © 2007 Microchip Technology Inc.
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