MICROCHIP MCP413X, MCP415X, MCP423X, MCP425X Technical data
MCP413X/415X/423X/425X
1
2
3
4
5
6
7
8
P0W
P0B
P0A
V
SS
V
DD
MCP41X1
Single Potentiometer
PDIP, SOIC, MSOP,
CS
SDI/SDO
SCK
1
2
3
4
5
6
7
8
P0B
SDO
P0W
V
DD
MCP41X2
Single Rheostat
PDIP, SOIC, MSOP,
1
2
3
4
11
12
13
14
SHDN
SDO
NC
V
DD
MCP42X1 Dual Potentiometers
PDIP, SOIC, TSSOP
5
6
7
8
9
10
P0W
P0B
P0A
P1A
P1W
P1B
V
SS
CS
SDI
SCK
V
SS
CS
SDI
SCK
1
2
3
4
11
12
13
14
SDO
SHDN
4x4 QFN
5
6
78
9
10
P0B
NC
P0W
P0A
P1A
P1W
V
SS
SCK
V
SS
SDI
15
16
P1B
V
DD
CS
NC
1
2
3
4
7
8
9
10
SDO
V
DD
MCP42X2 Dual Rheostat
MSOP, DFN
5
6
P0B
P0W
P1W
P1B
V
SS
CS
SDI
SCK
3x3 DFN
3x3 DFN
7/8-Bit Single/Dual SPI Digital POT with Volatile Memory
Features
• Single or Dual Resistor Network options
• Potentiometer or Rheostat configuration options
• Resistor Network Resolution
- 7-bit: 128 Resistors (129 Steps)
- 8-bit: 256 Resistors (257 Steps)
Resistances options of:
•R
AB
-5kΩ
-10kΩ
-50kΩ
- 100 kΩ
• Zero Scale to Full Scale Wiper operation
• Low Wiper Resistance: 75Ω (typ.)
• Low Tempco:
- Absolute (Rheostat): 50 ppm typical
(0°C to 70°C)
- Ratiometric (Potentiometer): 15 ppm typical
• SPI Serial Interface (10 MHz, modes 0,0 & 1,1)
- High-Speed Read/Writes to wiper registers
- SDI/SDO multiplexing (MCP41X1 only)
• Resistor Network Terminal Disconnect Feature
via:
- Shutdown pin (SHDN
- Terminal Control (TCON) Register
• Brown-out reset protection (1.5V typical)
• Serial Interface Inactive current (2.5 uA typ.)
• High-Voltage Tolerant Digital Inputs: Up to 12.5V
• Supports Split Rail Applications
• Internal weak pull-up on all digital inputs
• Wide Operating Voltage:
- 2.7V to 5.5V - Device Characteristics
Specified
- 1.8V to 5.5V - Device Operation
• Wide Bandwidth (-3 dB) Operation:
- 2 MHz (typ.) for 5.0 kΩ device
• Extended temperature range (-40°C to +125°C)
)
Description
The MCP41XX and MCP42XX devices offer a wide
range of product offerings using an SPI interface. This
family of devices support 7-bit and 8-bit resistor
networks, and Potentiometer and Rheostat pinouts.
Package Types
© 2007 Microchip Technology Inc. DS22060A-page 1
MCP413X/415X/423X/425X
Power-up/
Brown-out
Control
VDD
V
SS
SPI Serial
Interface
Module &
Control
Logic
(WiperLock™
Technology)
Resistor
Network 0
(Pot 0)
Wiper 0
& TCON
Register
Resistor
Network 1
(Pot 1)
Wiper 1
& TCON
Register
CS
SCK
SDI
SDO
NC
SHDN
Memory (4x9)
Wiper0
Wiper1
TCON
STATUS
P0A
P0W
P0B
P1A
P1W
P1B
For Dual Resistor Network
Devices Only
For Dual Potentiometer
Devices Only
Device Block Diagram
Device Features
Resistance (typical)
Device
MCP4131
MCP4132
(3)
1 Potentiometer
(3)
1 Rheostat SPI RAM No Mid-Scale 5.0, 10.0, 50.0, 100.0 75 129 1.8V to 5.5V
MCP4141 1 Potentiometer
Wiper
Configuration
# of POTs
Typ e
Memory
Control
Interface
(1)
SPI RAM No Mid-Scale 5.0, 10.0, 50.0, 100.0 75 129 1.8V to 5.5V
(1)
SPI EE Ye s NV Wiper 5.0, 10.0, 50.0, 100.0 75 129 2.7V to 5.5V
WiperLock
Technology
POR Wiper
R
Setting
Options (kΩ)
AB
MCP4142 1 Rheostat SPI EE Ye s NV Wiper 5.0, 10.0, 50.0, 100.0 75 129 2.7V to 5.5V
(3)
MCP4151
MCP4152
1 Potentiometer
(3)
1 Rheostat SPI RAM No Mid-Scale 5.0, 10.0, 50.0, 100.0 75 257 1.8V to 5.5V
MCP4161 1 Potentiometer
(1)
SPI RAM No Mid-Scale 5.0, 10.0, 50.0, 100.0 75 257 1.8V to 5.5V
(1)
SPI EE Ye s NV Wiper 5.0, 10.0, 50.0, 100.0 75 257 2.7V to 5.5V
MCP4162 1 Rheostat SPI EE Ye s NV Wiper 5.0, 10.0, 50.0, 100.0 75 257 2.7V to 5.5V
MCP4231
MCP4232
2 Potentiometer
(3)
2 Rheostat SPI RAM No Mid-Scale 5.0, 10.0, 50.0, 100.0 75 129 1.8V to 5.5V
(3)
MCP4241 2 Potentiometer
MCP4242 2 Rheostat SPI EE Ye s NV Wiper 5.0, 10.0, 50.0, 100.0 75 129 2.7V to 5.5V
MCP4251
MCP4252
MCP4261 2 Potentiometer
MCP4262 2 Rheostat SPI EE Ye s NV Wiper 5.0, 10.0, 50.0, 100.0 75 257 2.7V to 5.5V
Note 1: Floating either terminal (A or B) allows the device to be used as a Rheostat (variable resistor).
(3)
2 Potentiometer
(3)
2 Rheostat SPI RAM No Mid-Scale 5.0, 10.0, 50.0, 100.0 75 257 1.8V to 5.5V
2: Analog characteristics only tested from 2.7V to 5.5V unless otherwise noted.
3: Please check Microchip web site for device release and availability.
(1)
SPI RAM No Mid-Scale 5.0, 10.0, 50.0, 100.0 75 129 1.8V to 5.5V
(1)
SPI EE Ye s NV Wiper 5.0, 10.0, 50.0, 100.0 75 129 2.7V to 5.5V
(1)
SPI RAM No Mid-Scale 5.0, 10.0, 50.0, 100.0 75 257 1.8V to 5.5V
(1)
SPI EE Ye s NV Wiper 5.0, 10.0, 50.0, 100.0 75 257 2.7V to 5.5V
DS22060A-page 2 © 2007 Microchip Technology Inc.
Wiper
- RW
(Ω)
# of Steps
VDD
Operating
Range
(2)
MCP413X/415X/423X/425X
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Voltage on VDD with respect to VSS............... -0.6V to +7.0V
Voltage on CS
SHDN
Voltage on all other pins (PxA, PxW, PxB, and
SDO) with respect to V
Input clamp current, I
(V
< 0, VI > VDD, VI > VPP ON HV pins) ......................±20 mA
I
Output clamp current, I
(V
< 0 or VO > VDD) ..................................................±20 mA
O
Maximum output current sunk by any Output pin
......................................................................................25 mA
Maximum output current sourced by any Output pin
......................................................................................25 mA
Maximum current out of V
Maximum current into V
Maximum current into P
Storage temperature ....................................-65°C to +150°C
Ambient temperature with power applied
-40°C to +125°C
Total power dissipation (Note 1) ................................400 mW
Soldering temperature of leads (10 seconds) ............. +300°C
ESD protection on all pins .................................. ≥ 4 kV (HBM),
.......................................................................... ≥ 300V (MM)
Maximum Junction Temperature (T
Note 1: Power dissipation is calculated as follows:
, SCK, SDI, SDI/SDO, and
with respect to VSS
SS ............................
IK
OK
DD
XA, PXW & PXB pins ............±2.5 mA
Pdis = VDD x {IDD - ∑ IOH} + ∑ {(VDD-VOH) x IOH} + ∑(VOl x IOL)
......................................
pin .................................100 mA
SS
pin ....................................100 mA
) ......................... +150°C
J
-0.6V to 12.5V
-0.3V to VDD + 0.3V
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
© 2007 Microchip Technology Inc. DS22060A-page 3
MCP413X/415X/423X/425X
AC/DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise specified)
Operating Temperature –40°C ≤ T
DC Characteristics
All parameters apply across the specified operating ranges unless noted.
= +2.7V to 5.5V, 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ devices.
V
DD
Typical specifications represent values for V
Parameters Sym Min Typ Max Units Conditions
Supply Voltage V
DD
2.7 — 5.5 V
1.8 — 2.7 V Serial Interface only.
, SDI, SDO,
CS
HDN pin
SCK, S
Voltage Range
V
V
HV
VSS —VDD +
— 12.5V V VDD ≥
SS
8.0V
DD Start Voltage
V
V
— — 1.65 V RAM retention voltage (V
BOR
to ensure Wiper
Reset
DD Rise Rate to
V
V
(Note 9)V/ms
DDRR
ensure Power-on
Reset
Delay after device
T
BORD
—1020µs
exits the reset
state
(VDD > V
Supply Current
BOR
)
— — 450 µA Serial Interface Active,
I
DD
(Note 10)
— 2.5 5 µA Serial Interface Inactive,
— 0.55 1 mA Serial Interface Active,
Note 1: Resistance is defined as the resistance between terminal A to terminal B.
2: INL and DNL are measured at V
with VA = VDD and VB = VSS.
W
3: MCP4XX1 only.
4: MCP4XX2 only, includes V
WZSE
and V
WFSE
.
5: Resistor terminals A, W and B’s polarity with respect to each other is not restricted.
6: This specification by design.
7: Non-linearity is affected by wiper resistance (R
), which changes significantly over voltage and
W
temperature.
8: The MCP4XX1 is externally connected to match the configurations of the MCP41X2 and MCP42X2, and
then tested.
9: POR/BOR is not rate dependent.
10: Supply current is independent of current through the resistor network.
≤ +125°C (extended)
A
= 5.5V, TA = +25°C.
DD
The CS pin will be at one
4.5V
VVDD <
of three input levels
, VIH or V
(V
IL
IHH
4.5V
= 5.5V, CS = VIL, SCK @ 5 MHz,
V
DD
write all 0’s to volatile Wiper 0 (address
0h)
= VIH, VDD = 5.5V
CS
= 5.5V, CS = V
V
DD
IHH
,
SCK @ 5 MHz,
decrement volatile Wiper 0 (address 0h)
). (Note 6)
) < V
RAM
BOR
DS22060A-page 4 © 2007 Microchip Technology Inc.
MCP413X/415X/423X/425X
AC/DC CHARACTERISTICS (CONTINUED)
Standard Operating Conditions (unless otherwise specified)
Operating Temperature –40°C ≤ T
DC Characteristics
All parameters apply across the specified operating ranges unless noted.
= +2.7V to 5.5V, 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ devices.
V
DD
Typical specifications represent values for V
Parameters Sym Min Typ Max Units Conditions
Resistance
(± 20%)
R
AB
4.0 5 6.0 kΩ -502 devices (Note 1)
8.0 10 12.0 kΩ -103 devices (Note 1)
40.0 50 60.0 kΩ -503 devices (Note 1)
80.0 100 120.0 kΩ -104 devices (Note 1)
Resolution N 257 Taps 8-bit No Missing Codes
129 Taps 7-bit No Missing Codes
Step Resistance R
—RAB /
S
— Ω 8-bit Note 6
(256)
/
—R
AB
— Ω 7-bit Note 6
(128)
Nominal
Resistance Match
Wiper Resistance
(Note 3, Note 4)
Nominal
Resistance
Te mp c o
Ratiometeric
|R
|R
- R
AB0
AB1
/ R
AB
- R
BW0
BW1
/ R
BW
R
W
/ΔT — 50 — ppm/°C TA = -20°C to +70°C
ΔR
AB
/ΔT — 15 — ppm/°C Code = Midscale (80h or 40h)
ΔV
WB
— 0.2 1.25 % MCP42X1 devices only
|
—0.251.5 %MCP42X2 devices only,
|
— 75 160 Ω VDD = 5.5 V, IW = 2.0 mA, code = 00h
— 75 300 Ω VDD = 2.7 V, IW = 2.0 mA, code = 00h
— 100 — ppm/°C T
— 150 — ppm/°C T
Te mp c o
Resistor Terminal
V
A,VW,VB
Vss — V
DD
Input Voltage
Range (Terminals
A, B and W)
Maximum current
I
W
——2.5mANote 6, Worst case current through
through A, W or B
Leakage current
into A, W or B
I
WL
—100— nAMCP4XX1 PxA = PxW = PxB = V
—100— nAMCP4XX2 PxB = PxW = VSS
Note 1: Resistance is defined as the resistance between terminal A to terminal B.
2: INL and DNL are measured at VW with VA = VDD and VB = VSS.
3: MCP4XX1 only.
4: MCP4XX2 only, includes V
WZSE
and V
WFSE
.
5: Resistor terminals A, W and B’s polarity with respect to each other is not restricted.
6: This specification by design.
7: Non-linearity is affected by wiper resistance (R
), which changes significantly over voltage and
W
temperature.
8: The MCP4XX1 is externally connected to match the configurations of the MCP41X2 and MCP42X2, and
then tested.
9: POR/BOR is not rate dependent.
10: Supply current is independent of current through the resistor network.
≤ +125°C (extended)
A
= 5.5V, TA = +25°C.
DD
Code = Full-Scale
= -40°C to +85°C
A
= -40°C to +125°C
A
V Note 5, Note 6
wiper when wiper is either Full Scale or
Zero Scale.
SS
© 2007 Microchip Technology Inc. DS22060A-page 5
MCP413X/415X/423X/425X
AC/DC CHARACTERISTICS (CONTINUED)
Standard Operating Conditions (unless otherwise specified)
Operating Temperature –40°C ≤ T
DC Characteristics
All parameters apply across the specified operating ranges unless noted.
= +2.7V to 5.5V, 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ devices.
V
DD
Typical specifications represent values for V
Parameters Sym Min Typ Max Units Conditions
Full-Scale Error
(MCP4XX1 only)
(8-bit code =
100h,
7-bit code = 80h)
V
WFSE
-6.0 -0.1 — LSb 5 kΩ 8-bit 3.0V ≤ VDD ≤ 5.5V
-4.0 -0.1 — LSb 7-bit 3.0V ≤ V
-3.5 -0.1 — LSb 10 kΩ 8-bit 3.0V ≤ VDD ≤ 5.5V
-2.0 -0.1 — LSb 7-bit 3.0V ≤ VDD ≤ 5.5V
-0.8 -0.1 — LSb 50 kΩ 8-bit 3.0V ≤ V
-0.5 -0.1 — LSb 7-bit 3.0V ≤ V
-0.5 -0.1 — LSb 100 kΩ 8-bit 3.0V ≤ VDD ≤ 5.5V
-0.5 -0.1 — LSb 7-bit 3.0V ≤ VDD ≤ 5.5V
Zero-Scale Error
(MCP4XX1 only)
(8-bit code = 00h,
7-bit code = 00h)
V
WZSE
—+0.1+6.0LSb5kΩ 8-bit 3.0V ≤ VDD ≤ 5.5V
— +0.1 +3.0 LSb 7-bit
— +0.1 +3.5 LSb 10 kΩ 8-bit 3.0V ≤ VDD ≤ 5.5V
— +0.1 +2.0 LSb 7-bit
— +0.1 +0.8 LSb 50 kΩ 8-bit 3.0V ≤ V
— +0.1 +0.5 LSb 7-bit
— +0.1 +0.5 LSb 100 kΩ 8-bit 3.0V ≤ VDD ≤ 5.5V
— +0.1 +0.5 LSb 7-bit
Potentiometer
Integral
INL -1 ±0.5 +1 LSb 8-bit 3.0V ≤ V
-0.5 ±0.25 +0.5 LSb 7-bit
Non-linearity
Potentiometer
Differential
DNL -0.5 ±0.25 +0.5 LSb 8-bit 3.0V ≤ V
-0.25 ±0.125 +0.25 LSb 7-bit
Non-linearity
Bandwidth -3 dB
(See Figure 2-64,
load = 30 pF)
BW — 2 — MHz 5 kΩ 8-bit Code = 80h
— 2 — MHz 7-bit Code = 40h
—1—MHz10kΩ 8-bit Code = 80h
— 1 — MHz 7-bit Code = 40h
—200—kHz50kΩ 8-bit Code = 80h
— 200 — kHz 7-bit Code = 40h
—100—kHz100kΩ 8-bit Code = 80h
— 100 — kHz 7-bit Code = 40h
Note 1: Resistance is defined as the resistance between terminal A to terminal B.
2: INL and DNL are measured at VW with VA = VDD and VB = VSS.
3: MCP4XX1 only.
4: MCP4XX2 only, includes V
WZSE
and V
WFSE
.
5: Resistor terminals A, W and B’s polarity with respect to each other is not restricted.
6: This specification by design.
7: Non-linearity is affected by wiper resistance (R
), which changes significantly over voltage and
W
temperature.
8: The MCP4XX1 is externally connected to match the configurations of the MCP41X2 and MCP42X2, and
then tested.
9: POR/BOR is not rate dependent.
10: Supply current is independent of current through the resistor network.
≤ +125°C (extended)
A
= 5.5V, TA = +25°C.
DD
MCP4XX1 devices only
(Note 2)
MCP4XX1 devices only
(Note 2)
≤ 5.5V
DD
≤ 5.5V
DD
DD
DD
DD
DD
≤ 5.5V
≤ 5.5V
≤ 5.5V
≤ 5.5V
DS22060A-page 6 © 2007 Microchip Technology Inc.
MCP413X/415X/423X/425X
AC/DC CHARACTERISTICS (CONTINUED)
Standard Operating Conditions (unless otherwise specified)
Operating Temperature –40°C ≤ T
DC Characteristics
All parameters apply across the specified operating ranges unless noted.
= +2.7V to 5.5V, 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ devices.
V
DD
Typical specifications represent values for V
Parameters Sym Min Typ Max Units Conditions
Rheostat Integral
Non-linearity
R-INL -1.5 ±0.5 +1.5 LSb 5 kΩ 8-bit 5.5V, I
-8.25 +4.5 +8.25 LSb 3.0V, IW = 480 µA
MCP41X1
(Note 4, Note 8)
MCP4XX2
devices only
(Note 4)
-1.125 ±0.5 +1.125 LSb 7-bit 5.5V, I
-6.0 +4.5 +6.0 LSb 3.0V, IW = 480 µA
Section 2.0 1.8V
Section 2.0 1.8V
-1.5 ±0.5 +1.5 LSb 10 kΩ 8-bit 5.5V, I
-5.5 +2.5 +5.5 LSb 3.0V, IW = 240 µA
Section 2.0 1.8V
-1.125 ±0.5 +1.125 LSb 7-bit 5.5V, IW = 450 µA
-4.0 +2.5 +4.0 LSb 3.0V, IW = 240 µA
Section 2.0 1.8V
-1.5 ±0.5 +1.5 LSb 50 kΩ 8-bit 5.5V, I
-2.0 +1 +2.0 LSb 3.0V, IW = 48 µA
Section 2.0 1.8V
-1.125 ±0.5 +1.125 LSb 7-bit 5.5V, I
-1.5 +1 +1.5 LSb 3.0V, IW = 48 µA
Section 2.0 1.8V
-1.0 ±0.5 +1.0 LSb 100 kΩ 8-bit 5.5V, I
-1.5 +0.25 +1.5 LSb 3.0V, IW = 24 µA
Section 2.0 1.8V
-0.8 ±0.5 +0.8 LSb 7-bit 5.5V, I
-1.125 +0.25 +1.125 LSb 3.0V, IW = 24 µA
Section 2.0 1.8v
Note 1: Resistance is defined as the resistance between terminal A to terminal B.
2: INL and DNL are measured at V
with VA = VDD and VB = VSS.
W
3: MCP4XX1 only.
4: MCP4XX2 only, includes V
WZSE
and V
WFSE
.
5: Resistor terminals A, W and B’s polarity with respect to each other is not restricted.
6: This specification by design.
7: Non-linearity is affected by wiper resistance (R
), which changes significantly over voltage and
W
temperature.
8: The MCP4XX1 is externally connected to match the configurations of the MCP41X2 and MCP42X2, and
then tested.
9: POR/BOR is not rate dependent.
10: Supply current is independent of current through the resistor network.
≤ +125°C (extended)
A
= 5.5V, TA = +25°C.
DD
W
(Note 7)
W
(Note 7)
W
(Note 7)
(Note 7)
W
(Note 7)
W
(Note 7)
W
(Note 7)
W
(Note 7)
= 900 µA
= 900 µA
= 450 µA
= 90 µA
= 90 µA
= 45 µA
= 45 µA
© 2007 Microchip Technology Inc. DS22060A-page 7
MCP413X/415X/423X/425X
AC/DC CHARACTERISTICS (CONTINUED)
Standard Operating Conditions (unless otherwise specified)
Operating Temperature –40°C ≤ T
DC Characteristics
All parameters apply across the specified operating ranges unless noted.
= +2.7V to 5.5V, 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ devices.
V
DD
Typical specifications represent values for V
Parameters Sym Min Typ Max Units Conditions
Rheostat
Differential
Non-linearity
MCP41X1
(Note 4, Note 8)
MCP4XX2
devices only
(Note 4)
R-DNL -0.5 ±0.25 +0.5 LSb 5 kΩ 8-bit 5.5V, I
-1.0 +0.5 +1.0 LSb 3.0V (Note 7)
Section 2.0 1.8V
-0.375 ±0.25 +0.375 LSb 7-bit 5.5V, IW = 900 µA
-0.75 +0.5 +0.75 LSb 3.0V (Note 7)
Section 2.0 1.8V
-0.5 ±0.25 +0.5 LSb 10 kΩ 8-bit 5.5V, I
-1.0 +0.25 +1.0 LSb 3.0V (Note 7)
Section 2.0 1.8V
-0.375 ±0.25 +0.375 LSb 7-bit 5.5V, IW = 450 µA
-0.75 +0.5 +0.75 LSb 3.0V (Note 7)
Section 2.0 1.8V
-0.5 ±0.25 +0.5 LSb 50 kΩ 8-bit 5.5V, I
-0.5 ±0.25 +0.5 LSb 3.0V (Note 7)
Section 2.0 1.8V
-0.375 ±0.25 +0.375 LSb 7-bit 5.5V, IW = 90 µA
-0.375 ±0.25 +0.375 LSb 3.0V (Note 7)
Section 2.0 1.8V
-0.5 ±0.25 +0.5 LSb 100 kΩ 8-bit 5.5V, I
-0.5 ±0.25 +0.5 LSb 3.0V (Note 7)
Section 2.0 1.8V
-0.375 ±0.25 +0.375 LSb 7-bit 5.5V, I
-0.375 ±0.25 +0.375 LSb 3.0V (Note 7)
Capacitance (P
Capacitance (P
Capacitance (P
)C
A
)CW— 120 — pF f =1 MHz, Code = Full-Scale
w
)C
B
AW
BW
— 75 — pF f =1 MHz, Code = Full-Scale
— 75 — pF f =1 MHz, Code = Full-Scale
Note 1: Resistance is defined as the resistance between terminal A to terminal B.
2: INL and DNL are measured at V
with VA = VDD and VB = VSS.
W
3: MCP4XX1 only.
4: MCP4XX2 only, includes V
WZSE
and V
WFSE
.
5: Resistor terminals A, W and B’s polarity with respect to each other is not restricted.
6: This specification by design.
7: Non-linearity is affected by wiper resistance (R
), which changes significantly over voltage and
W
temperature.
8: The MCP4XX1 is externally connected to match the configurations of the MCP41X2 and MCP42X2, and
then tested.
9: POR/BOR is not rate dependent.
10: Supply current is independent of current through the resistor network.
≤ +125°C (extended)
A
= 5.5V, TA = +25°C.
DD
W
W
W
W
W
1.8V
= 900 µA
= 450 µA
= 90 µA
= 45 µA
= 45 µA
DS22060A-page 8 © 2007 Microchip Technology Inc.
MCP413X/415X/423X/425X
AC/DC CHARACTERISTICS (CONTINUED)
Standard Operating Conditions (unless otherwise specified)
Operating Temperature –40°C ≤ T
DC Characteristics
All parameters apply across the specified operating ranges unless noted.
= +2.7V to 5.5V, 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ devices.
V
DD
Typical specifications represent values for V
Parameters Sym Min Typ Max Units Conditions
Digital Inputs/Outputs (CS, SDI, SDO, SCK, SHDN)
Schmitt Trigger
V
IH
0.45 V
—— V2.7V ≤ VDD ≤ 5.5V
DD
High Input
Threshold
—— V1.8V ≤ VDD ≤ 2.7V
DD
Schmitt Trigger
0.5 V
DD
V
IL
— — 0.2V
Low Input
Threshold
Hysteresis of
V
HYS
—0.1VDD—V
Schmitt Trigger
Inputs
High Voltage Limit V
Output Low
Voltage (SDO)
Output High
Voltage (SDO)
Weak Pull-up /
Pull-down Current
Pull-up /
CS
MAX
V
V
OL
0.7VDD —VDD VIOH = -2.5 mA, VDD = 5.5V
V
OH
——12.5
—0.3VDD VIOL = 5 mA, VDD = 5.5V
SS
—0.3VDD VIOL = 1 mA, VDD = 1.8V
V
SS
0.7VDD —VDD VIOL = -1 mA, VDD = 1.8V
I
PU
— — 375 uA Internal VDD pull-up, V
—170— µACS
R
CS
—16—kΩ V
(6)
V Pin can tolerate V
Pull-down
Resistance
Input Leakage
I
IL
-1 — 1 µA VIN = VDD and VIN = VSS
Current
Pin Capacitance C
, C
IN
OUT
—10—pFf
RAM (Wiper) Value
Value Range N 0h — 1FFh hex 8-bit device
0h — 1FFh hex 7-bit device
POR/BOR Value N — 80h — hex 8-bit device
— 40h — hex 7-bit device
Note 1: Resistance is defined as the resistance between terminal A to terminal B.
2: INL and DNL are measured at V
with VA = VDD and VB = VSS.
W
3: MCP4XX1 only.
4: MCP4XX2 only, includes V
WZSE
and V
WFSE
.
5: Resistor terminals A, W and B’s polarity with respect to each other is not restricted.
6: This specification by design.
7: Non-linearity is affected by wiper resistance (R
), which changes significantly over voltage and
W
temperature.
8: The MCP4XX1 is externally connected to match the configurations of the MCP41X2 and MCP42X2, and
then tested.
9: POR/BOR is not rate dependent.
10: Supply current is independent of current through the resistor network.
≤ +125°C (extended)
A
= 5.5V, TA = +25°C.
DD
(Allows 2.7V Digital V
5V Analog V
V
pin, V
= 5.5V, VCS = 3V
DD
= 20 MHz
C
DD
)
DD
or less.
MAX
= 5.5V, VCS = 3V
DD
IHH
with
pull-down
© 2007 Microchip Technology Inc. DS22060A-page 9
MCP413X/415X/423X/425X
AC/DC CHARACTERISTICS (CONTINUED)
Standard Operating Conditions (unless otherwise specified)
Operating Temperature –40°C ≤ T
DC Characteristics
All parameters apply across the specified operating ranges unless noted.
= +2.7V to 5.5V, 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ devices.
V
DD
Typical specifications represent values for V
Parameters Sym Min Typ Max Units Conditions
Power Requirements
Power Supply
PSS — 0.0015 0.0035 %/% 8-bit V
Sensitivity
(MCP41X2 and
— 0.0015 0.0035 %/% 7-bit V
MCP42X2 only)
Note 1: Resistance is defined as the resistance between terminal A to terminal B.
2: INL and DNL are measured at V
with VA = VDD and VB = VSS.
W
3: MCP4XX1 only.
4: MCP4XX2 only, includes V
WZSE
and V
WFSE
.
5: Resistor terminals A, W and B’s polarity with respect to each other is not restricted.
6: This specification by design.
7: Non-linearity is affected by wiper resistance (R
), which changes significantly over voltage and
W
temperature.
8: The MCP4XX1 is externally connected to match the configurations of the MCP41X2 and MCP42X2, and
then tested.
9: POR/BOR is not rate dependent.
10: Supply current is independent of current through the resistor network.
≤ +125°C (extended)
A
= 5.5V, TA = +25°C.
DD
= 2.7V to 5.5V,
DD
= 2.7V, Code = 80h
V
A
= 2.7V to 5.5V,
DD
VA = 2.7V, Code = 40h
DS22060A-page 10 © 2007 Microchip Technology Inc.
MCP413X/415X/423X/425X
CS
SCK
SDO
SDI
70
71
72
73
74
75, 76
77
78
79
80
SDI
MSb LSb
BIT6 - - - - - -1
MSb IN BIT6 - - - -1 LSb IN
83
84
V
IH
V
IL
V
IHH
V
IH
1.1 SPI Mode Timing Waveforms and Requirements
FIGURE 1-1: SPI Timing Waveform (Mode = 11).
TABLE 1-1: SPI REQUIREMENTS (MODE =
# Characteristic Symbol Min Max Units Conditions
SCK Input Frequency F
70 CS
Active (VIL or V
71 SCK input high time TscH 45 — ns VDD = 2.7V to 5.5V
72 SCK input low time TscL 45 — ns V
73 Setup time of SDI input to SCK↑ edge T
74 Hold time of SDI input from SCK↑ edge TscH2
77 CS Inactive (VIH) to SDO output hi-impedance TcsH2DOZ — 50 ns Note 1
80 SDO data output valid after SCK↓ edge TscL2
83 CS
84 Hold time of CS
Inactive (VIH) after SCK↑ edge TscH2csI 100 — ns VDD = 2.7V to 5.5V
CS Active (VIL or V
Note 1: This specification by design.
) to SCK↑ input TcsA2scH 60 — ns
IHH
Inactive (VIH) to
)
IHH
11)
—10MHzVDD = 2.7V to 5.5V
SCK
—1MHzV
500 — ns V
500 — ns VDD = 1.8V to 2.7V
DIV2scH 10 — ns
DIL20 —ns
DOV — 70 ns V
1msV
TcsA2csI 50 — ns
170 ns V
DD
DD
DD
DD
DD
DD
= 1.8V to 2.7V
= 1.8V to 2.7V
= 2.7V to 5.5V
= 2.7V to 5.5V
= 1.8V to 2.7V
= 1.8V to 2.7V
© 2007 Microchip Technology Inc. DS22060A-page 11
MCP413X/415X/423X/425X
CS
SCK
SDO
SDI
70
71 72
82
SDI
74
75, 76
MSb BIT6 - - - - - -1 LSb
77
MSb IN BIT6 - - - -1 LSb IN
80
83
84
73
V
IH
V
IL
V
IHH
V
IH
FIGURE 1-2: SPI Timing Waveform (Mode = 00).
TABLE 1-2: SPI REQUIREMENTS (MODE = 00)
# Characteristic Symbol Min Max Units Conditions
SCK Input Frequency F
—10MHzVDD = 2.7V to 5.5V
SCK
—1MHzVDD = 1.8V to 2.7V
70 CS
Active (VIL or V
71 SCK input high time TscH 45 — ns V
) to SCK↑ input TcsA2scH 60 — ns
IHH
= 2.7V to 5.5V
DD
500 — ns VDD = 1.8V to 2.7V
72 SCK input low time TscL 45 — ns V
500 — ns V
73 Setup time of SDI input to SCK↑ edge T
DIV2scH 10 — ns
= 2.7V to 5.5V
DD
= 1.8V to 2.7V
DD
74 Hold time of SDI input from SCK↑ edge TscH2DIL20 —ns
77 CS
80 SDO data output valid after SCK↓ edge TscL2
82 SDO data output valid after
83 CS
84 Hold time of CS
Inactive (VIH) to SDO output hi-impedance TcsH2DOZ— 50nsNote 1
DOV— 70nsV
170 ns V
= 2.7V to 5.5V
DD
= 1.8V to 2.7V
DD
TssL2doV — 70 ns
Active (VIL or V
CS
IHH
)
Inactive (VIH) after SCK↓ edge TscH2csI 100 — ns VDD = 2.7V to 5.5V
= 1.8V to 2.7V
DD
Active (VIL or V
CS
Inactive (VIH) to
)
IHH
1msV
TcsA2csI 50 — ns
Note 1: This specification by design.
DS22060A-page 12 © 2007 Microchip Technology Inc.
MCP413X/415X/423X/425X
TABLE 1-3: SPI REQUIREMENTS FOR SDI/SDO MULTIPLEXED (READ OPERATION ONLY)
Characteristic Symbol Min Max Units Conditions
SCK Input Frequency F
Active (VIL or V
CS
SCK input high time TscH 1.8 — us
SCK input low time TscL 1.8 — ns
Setup time of SDI input to SCK↑ edge T
Hold time of SDI input from SCK↑ edge TscH2
CS Inactive (VIH) to SDO output hi-impedance TcsH2DOZ — 50 ns Note 1
SDO data output valid after SCK↓ edge TscL2
SDO data output valid after
Active (VIL or V
CS
Inactive (VIH) after SCK↓ edge TscH2csI 100 — ns
CS
Hold time of CS Inactive (VIH) to
Active (VIL or V
CS
Note 1: This specification by design.
2: This table is for the devices where the SPI’s SDI and SDO pins are multiplexed (SDI/SDO) and a Read
command is issued. This is NOT required for SDI/SDO operation with the Increment, Decrement, or Write
commands. This data rate can be increased by having external pull-up resistors to increase the rising
edges of each bit.
) to SCK↑ input TcsA2scH 60 — ns
IHH
TssL2doV — 50 ns
)
IHH
)
IHH
—250kHzVDD = 2.7V to 5.5V
SCK
DIV2scH 40 — ns
DIL40—ns
DOV—1.6us
TcsA2csI 50 — ns
(2)
© 2007 Microchip Technology Inc. DS22060A-page 13
MCP413X/415X/423X/425X
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, VDD= +2.7V to +5.5V, VSS=GND.
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Specified Temperature Range T
Operating Temperature Range T
Storage Temperature Range T
Thermal Package Resistances
Thermal Resistance, 8L-PDIP θ
Thermal Resistance, 8L-SOIC θ
Thermal Resistance, 8L-MSOP θ
Thermal Resistance, 8L-DFN (3x3) θ
Thermal Resistance, 10L-PDIP θ
Thermal Resistance, 10L-MSOP θ
Thermal Resistance, 14L-PDIP θ
Thermal Resistance, 14L-SOIC θ
Thermal Resistance, 14L-MSOP θ
Thermal Resistance, 16L-QFN θ
A
A
A
JA
JA
JA
JA
JA
JA
JA
JA
JA
JA
-40 — +125 °C
-40 — +125 °C
-65 — +150 °C
— 84.6 — °C/W
— 145.5 — °C/W
—211—°C/W
— 68.5 — °C/W
—82—°C/W
—202—°C/W
—70—°C/W
—85—°C/W
—N/A—°C/W
—50—°C/W
DS22060A-page 14 © 2007 Microchip Technology Inc.
MCP413X/415X/423X/425X
0
50
100
150
200
250
300
350
400
450
500
550
600
650
0.00 2.00 4.00 6.00 8.00 10.00 12.00
f
SCK
(MHz)
Operating Current (I
DD
) (µA)
2.7V -40°C
2.7V 25°C
2.7V 85°C
2.7V 125°C
5.5V -40°C
5.5V 25°C
5.5V 85°C
5.5V 125°C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-40 25 85 125
Ambient Temperature (°C)
Standby Current (Istby) (µA)
5.5V
2.7V
0
50
100
150
200
250
2345678910
V
CS
(V)
R
CS
(kOhms)
-1000
-800
-600
-400
-200
0
200
400
600
800
1000
I
CS
(µA)
I
CS
R
CS
0
2
4
6
8
10
12
-40-200 20406080100120
Ambient Temperature (°C)
CS V
PP
Threshold (V)
2.7V Exit
5.5V Exit
2.7V Entry
5.5V Entry
2.0 TYPICAL PERFORMANCE CURVES
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
FIGURE 2-1: Device Current (IDD) vs. SPI
Frequency (f
(V
= 2.7V and 5.5V).
DD
FIGURE 2-2: Device Current (I
V
. (CS = VDD) vs. Ambient Temperature.
DD
) and Ambient Temperature
SCK
SHDN
) and
FIGURE 2-3: CS
Resistance (R
Voltage (V
) and Current (ICS) vs. CS Input
CS
) (V
CS
DD
FIGURE 2-4: CS
Pull-up/Pull-down
= 5.5V).
High Input Entry/Exit
Threshold vs. Ambient Temperature and V
DD
.
© 2007 Microchip Technology Inc. DS22060A-page 15
MCP413X/415X/423X/425X
20
60
100
140
180
220
260
300
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
Wiper Resistance (R
W
(ohms)
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C INL 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
-40°C
25°C
85°C
R
W
125°C
20
40
60
80
100
120
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
Wiper Resistance (R
W
(ohms)
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C IN L 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
R
W
-40°C 25°C
85°C
125°C
0
500
1000
1500
2000
2500
0 64 128 192 256
Wiper Setting (decimal)
Wiper Resistance (R
W
(ohms)
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
0.4
0.5
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C IN L 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
RW
Note: Refer to AN1080 for additional informa-
tion on the characteristics of the wiper
resistance (R
W
) with respect to device
voltage and wiper setting value.
20
60
100
140
180
220
260
300
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
Wiper Resistance (R
W
(ohms)
-2
0
2
4
6
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C INL 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
R
W
-40°C
25°C
85°C125°C
20
40
60
80
100
120
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
Wiper Resistance (R
W
(ohms)
-1.25
-0.75
-0.25
0.25
0.75
1.25
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C INL 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
R
-40°C
25°C
85°C
125°C
0
500
1000
1500
2000
2500
0 64 128 192 256
Wiper Setting (decimal)
Wiper Resistance (R
W
(ohms)
-2
18
38
58
78
98
118
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C IN L 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
RW
Note: Refer to AN1080 for additional informa-
tion on the characteristics of the wiper
resistance (R
W
) with respect to device
voltage and wiper setting value.
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
)
FIGURE 2-5: 5kΩ Pot Mode – RW (Ω),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (V
)
= 5.5V).
DD
)
FIGURE 2-8: 5k
Ω
Rheo Mode – RW (Ω),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (V
)
= 5.5V).
DD
W
Ω
FIGURE 2-6: 5k
Pot Mode – RW (Ω),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (V
)
FIGURE 2-7: 5k
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (V
DS22060A-page 16 © 2007 Microchip Technology Inc.
= 3.0V).
DD
Ω
Pot Mode – RW (Ω),
= 1.8V).
DD
Ω
FIGURE 2-9: 5k
Rheo Mode – RW (Ω),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (V
)
FIGURE 2-10: 5k
= 3.0V).
DD
Ω
Rheo Mode – RW (Ω),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (V
= 1.8V).
DD
MCP413X/415X/423X/425X
5050
5100
5150
5200
5250
5300
-40 0 40 80 120
Ambient Temperature (°C)
Nominal Resistance (R
AB
(Ohms)
2.7V
5.5V
1.8V
0
1000
2000
3000
4000
5000
6000
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
R
WB
(Ohms)
-40°C
25°C
85°C
125°C
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
)
FIGURE 2-11: 5kΩ – Nominal Resistance
(
Ω
) vs. Ambient Temperature and VDD.
Ω
FIGURE 2-12: 5k
– RWB (Ω) vs. Wiper
Setting and Ambient Temperature.
© 2007 Microchip Technology Inc. DS22060A-page 17
MCP413X/415X/423X/425X
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
FIGURE 2-13: 5kΩ – Low-Voltage
Decrement Wiper Settling Time (V
(1 µs/Div).
Ω
FIGURE 2-14: 5k
Decrement Wiper Settling Time (V
(1 µs/Div).
– Low-Voltage
= 5.5V)
DD
= 2.7V)
DD
FIGURE 2-16: 5k
Increment Wiper Settling Time (V
(1 µs/Div).
FIGURE 2-17: 5k
Increment Wiper Settling Time (V
(1 µs/Div).
Ω
– Low-Voltage
Ω
– Low-Voltage
= 5.5V)
DD
= 2.7V)
DD
Ω
FIGURE 2-15: 5k
Response Time (20 ms/Div).
DS22060A-page 18 © 2007 Microchip Technology Inc.
– Power-Up Wiper
MCP413X/415X/423X/425X
20
40
60
80
100
120
0 25 50 75 100 125150 175 200 225 250
Wiper Setting (decimal)
Wiper Resistance (R
W
(ohms)
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C INL 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
R
W
-40°C
25°C
85°C
125°C
20
60
100
140
180
220
260
300
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
Wiper Resistance (R
W
(ohms)
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C INL 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
R
W
-40°C
25°C
85°C
125°C
0
500
1000
1500
2000
2500
3000
3500
4000
0 64 128 192 256
Wiper Setting (decimal)
Wiper Resistance
(R
W
)(ohms)
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C IN L 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
RW
Note: Refer to AN1080 for additional informa-
tion on the characteristics of the wiper
resistance (R
W
) with respect to device
voltage and wiper setting value.
20
40
60
80
100
120
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
Wiper Resistance (R
W
(ohms)
-1
-0.5
0
0.5
1
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C IN L 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
R
W
-40°C
25°C85°C
125°C
20
60
100
140
180
220
260
300
0 25 50 75 100 125 150 175 200 225 250
Wiper Setting (decimal)
Wiper Resistance (R
W
(ohms)
-2
-1
0
1
2
3
4
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C INL 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL R
W
-40°C
25°C85°C
125°C
0
500
1000
1500
2000
2500
3000
3500
4000
0 64 128 192 256
Wiper Setting (decimal)
Wiper Resistance (R
W
(ohms)
-2
8
18
28
38
48
58
68
78
88
98
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C IN L 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
RW
Note: Refer to AN1080 for additional informa-
tion on the characteristics of the wiper
resistance (R
W
) with respect to device
voltage and wiper setting value.
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
)
FIGURE 2-18: 10 kΩ Pot Mode – RW (Ω),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (V
)
= 5.5V).
DD
)
FIGURE 2-21: 10 k
Ω
Rheo Mode – RW (Ω),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (V
)
= 5.5V).
DD
FIGURE 2-19: 10 k
Ω
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (V
FIGURE 2-20: 10 k
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (V
© 2007 Microchip Technology Inc. DS22060A-page 19
DD
Ω
DD
Pot Mode – RW (Ω),
= 3.0V).
Pot Mode – RW (Ω),
= 1.8V).
Ω
FIGURE 2-22: 10 k
Rheo Mode – RW (Ω),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (V
)
FIGURE 2-23: 10 k
= 3.0V).
DD
Ω
Rheo Mode – RW (Ω),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (V
= 1.8V).
DD
MCP413X/415X/423X/425X
9850
9900
9950
10000
10050
10100
10150
10200
10250
10300
-40 0 40 80 120
Ambient Temperature (°C)
Nominal Resistance (R
AB
(Ohms)
2.7V
5.5V
1.8V
0
2000
4000
6000
8000
10000
12000
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
R
WB
(Ohms)
-40°C
25°C
85°C
125°C
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
)
FIGURE 2-24: 10 kΩ – Nominal Resistance
(
Ω
) vs. Ambient Temperature and VDD.
Ω
FIGURE 2-25: 10 k
– RWB (Ω) vs. Wiper
Setting and Ambient Temperature.
DS22060A-page 20 © 2007 Microchip Technology Inc.
MCP413X/415X/423X/425X
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
FIGURE 2-26: 10 kΩ – Low-Voltage
Decrement Wiper Settling Time (V
(1 µs/Div).
Ω
FIGURE 2-27: 10 k
Decrement Wiper Settling Time (V
(1 µs/Div).
– Low-Voltage
= 5.5V)
DD
= 2.7V)
DD
FIGURE 2-28: 10 k
Increment Wiper Settling Time (V
(1 µs/Div).
FIGURE 2-29: 10 k
Increment Wiper Settling Time (V
(1 µs/Div).
Ω
– Low-Voltage
Ω
– Low-Voltage
= 5.5V)
DD
= 2.7V)
DD
© 2007 Microchip Technology Inc. DS22060A-page 21
MCP413X/415X/423X/425X
20
40
60
80
100
120
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
Wiper Resistance (R
W
)
(ohms)
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C IN L 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
R
W
-40°C
25°C
85°C
125°C
20
60
100
140
180
220
260
300
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
Wiper Resistance (R
W
)
(ohms)
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
Error (LSb)
-40C Rw 25C Rw 85C Rw 12 5C Rw
-40C INL 25C INL 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
R
W
-40°C
25°C
85°C
125°C
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000
11000
12000
13000
14000
15000
064128192256
Wiper Setting (decimal)
Wiper Resistance (R
W
(ohms)
-0.5
-0.4
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
0.4
0.5
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C INL 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
RW
Note: Refer to AN1080 for additional informa-
tion on the characteristics of the wiper
resistance (R
W
) with respect to device
voltage and wiper setting value.
20
40
60
80
100
120
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
Wiper Resistance (R
W
)
(ohms)
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C IN L 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
R
W
-40°C
25°C
85°C
125°C
20
60
100
140
180
220
260
300
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
Wiper Resistance (R
W
(ohms)
-1
-0.75
-0.5
-0.25
0
0.25
0.5
0.75
1
Error (LSb)
-40C Rw 25C Rw 85C Rw 12 5C Rw
-40C INL 25C INL 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
R
W
-40°C
25°C
85°C
125°C
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000
11000
12000
13000
14000
15000
0 25 50 75 100125 150 175200 225 250
Wiper Setting (decimal)
Wiper Resistance (Rw)
(ohms)
-1.5
3.5
8.5
13.5
18.5
23.5
28.5
33.5
38.5
43.5
48.5
53.5
58.5
63.5
68.5
73.5
78.5
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C INL 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
RW
Note: Refer to AN1080 for additional informa-
tion on the characteristics of the wiper
resistance (R
W
) with respect to device
voltage and wiper setting value.
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
FIGURE 2-30: 50 kΩ Pot Mode – RW (Ω),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (V
FIGURE 2-31: 50 k
= 5.5V).
DD
Ω
Pot Mode – RW (Ω),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (V
)
= 3.0V).
DD
FIGURE 2-33: 50 k
Ω
Rheo Mode – RW (Ω),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (V
)
FIGURE 2-34: 50 k
= 5.5V).
DD
Ω
Rheo Mode – RW (Ω),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (V
= 3.0V).
DD
FIGURE 2-32: 50 k
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (V
DS22060A-page 22 © 2007 Microchip Technology Inc.
Ω
Pot Mode – RW (Ω),
= 1.8V).
DD
Ω
FIGURE 2-35: 50 k
Rheo Mode – RW (Ω),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (V
= 1.8V).
DD
MCP413X/415X/423X/425X
49000
49500
50000
50500
51000
51500
52000
52500
-40 0 40 80 120
Ambient Temperature (°C)
Nominal Resistance (R
AB
(Ohms)
2.7V
1.8V
5.5V
0
10000
20000
30000
40000
50000
60000
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
R
WB
(Ohms)
-40°C
25°C
85°C
125°C
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
)
FIGURE 2-36: 50 kΩ – Nominal Resistance
(
Ω
) vs. Ambient Temperature and VDD.
Ω
FIGURE 2-37: 50 k
– RWB (Ω) vs. Wiper
Setting and Ambient Temperature.
© 2007 Microchip Technology Inc. DS22060A-page 23
MCP413X/415X/423X/425X
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
FIGURE 2-38: 50 kΩ – Low-Voltage
Decrement Wiper Settling Time (V
(1 µs/Div).
Ω
FIGURE 2-39: 50 k
Decrement Wiper Settling Time (V
(1 µs/Div).
– Low-Voltage
DD
DD
= 5.5V)
= 2.7V)
FIGURE 2-40: 50 k
Increment Wiper Settling Time (V
(1 µs/Div).
FIGURE 2-41: 50 k
Increment Wiper Settling Time (V
(1 µs/Div).
Ω
– Low-Voltage
Ω
– Low-Voltage
= 5.5V)
DD
= 2.7V)
DD
DS22060A-page 24 © 2007 Microchip Technology Inc.
MCP413X/415X/423X/425X
20
40
60
80
100
120
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
Wiper Resistance (R
W
(ohms)
-0.2
-0.1
0
0.1
0.2
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C IN L 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
R
W
-40°C
25°C
85°C
125°C
20
60
100
140
180
220
260
300
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
Wiper Resistance (R
W
(ohms)
-0.2
-0.15
-0.1
-0.05
0
0.05
0.1
0.15
0.2
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C IN L 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
R
W
-40°C
25°C
85°C
125°C
0
5000
10000
15000
20000
25000
0 64 128 192 256
Wiper Setting (decimal)
Wiper Resistance (R
W
(ohms)
-0.35
-0.25
-0.15
-0.05
0.05
0.15
0.25
0.35
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C IN L 85 C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
RW
Note: Refer to AN1080 for additional informa-
tion on the characteristics of the wiper
resistance (R
W
) with respect to device
voltage and wiper setting value.
20
40
60
80
100
120
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
Wiper Resistance (R
W
(ohms)
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C IN L 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
R
W
-40°C
25°C85°C
125°C
20
60
100
140
180
220
260
300
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
Wiper Resistance (Rw)
(ohms)
-0.6
-0.4
-0.2
0
0.2
0.4
0.6
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C I NL 85 C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
R
W
-40°C
25°C85°C
125°C
0
5000
10000
15000
20000
25000
0 64 128 192 256
Wiper Setting (decimal)
Wiper Resistance (R
W
(ohms)
-1
4
9
14
19
24
29
34
39
44
49
54
59
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C INL 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
RW
Note: Refer to AN1080 for additional informa-
tion on the characteristics of the wiper
resistance (R
W
) with respect to device
voltage and wiper setting value.
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
)
FIGURE 2-42: 100 kΩ Pot Mode – RW (Ω),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (V
)
= 5.5V).
DD
)
FIGURE 2-45: 100 k
(
Ω
), INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (V
Ω
Rheo Mode – RW
= 5.5V).
DD
FIGURE 2-43: 100 k
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (V
)
FIGURE 2-44: 100 k
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (V
© 2007 Microchip Technology Inc. DS22060A-page 25
DD
DD
Ω
Pot Mode – RW (Ω),
= 3.0V).
Ω
Pot Mode – RW (Ω),
= 1.8V).
Ω
FIGURE 2-46: 100 k
(
Ω
), INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (V
)
FIGURE 2-47: 100 k
(
Ω
), INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (V
Rheo Mode – RW
= 3.0V).
DD
Ω
Rheo Mode – RW
= 1.8V).
DD
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