MICROCHIP MCP1827, MCP1827S Technical data

MCP1827/MCP1827S

Fixed/Adjustable 3-LD DDPAK

5-LD DDPAK

3-LD TO-220

5-LD TO-220

12345

12345

123

123

PWRGD

SHDN

V

IN

GND(TAB)

V

OUT

ADJ

SHDN

V

IN

GND(TAB)

V

OUT

V

IN

GND(TAB)

V

OUT

V

IN

GND(TAB)

V

OUT

MCP1827

MCP1827

MCP1827S

MCP1827S

1.5A, Low Voltage, Low Quiescent Current LDO Regulator

Features

• 1.5A Output Current Capability

• Input Operating Voltage Range: 2.3V to 6.0V

• Adjustable Output Voltage Range: 0.8V to 5.0V
(MCP1827 only)

• Standard Fixed Output Voltages:

- 0.8V, 1.2V, 1.8V, 2.5V, 3.0V, 3.3V, 5.0V

• Other Fixed Output Voltage Options Available
Upon Request

• Low Dropout Voltage: 330 mV Typical at 1.5A

• Typical Output Voltage Tolerance: 0.5%

• Stable with 1.0 µF Ceramic Output Capacitor

• Fast response to Load Transients

• Low Supply Current: 120 µA (typ)

• Low Shutdown Supply Current: 0.1 µA (typ)
(MCP1827 only)

• Fixed Delay on Power Good Output
(MCP1827 only)

• Short Circuit Current Limiting and
Overtemperature Protection

• 5-Lead Plastic DDPAK, 5-Lead TO-220 Package
Options (MCP1827)

• 3-Lead Plastic DDPAK, 3-Lead TO-220 Package
Options (MCP1827S)

Applications

• High-Speed Driver Chipset Power

• Networking Backplane Cards

• Notebook Computers

• Network Interface Cards

• Palmtop Computers

• 2.5V to 1.XV Regulators

Description

The MCP1827/MCP1827S is a 1.5A Low Dropout
(LDO) linear regulator that provides high current and
low output voltages. The MCP1827 comes in a fixed or
adjustable output voltage version, with an output
voltage range of 0.8V to 5.0V. The 1.5A output current
capability, combined with the low output voltage
capability, make the MCP1827 a good choice for new
sub-1.8V output voltage LDO applications that have
high current demands. The MCP1827S is a 3-pin fixed
voltage version. The MCP1827/MCP1827S is based
upon the MCP1727 LDO device.

The MCP1827/MCP1827S is stable using ceramic
output capacitors that inherently provide lower output
noise and reduce the size and cost of the entire
regulator solution. Only 1 µF of output capacitance is
needed to stabilize the LDO.

Using CMOS construction, the quiescent current
consumed by the MCP1827/MCP1827S is typically
less than 120 µA over the entire input voltage range,
making it attractive for portable computing applications
that demand high output current. The MCP1827
versions have a Shutdown (S

HDN) pin. When shut

down, the quiescent current is reduced to less than

0.1 µA.
On the MCP1827 fixed output versions the

scaled-down output voltage is internally monitored and
a power good (PWRGD) output is provided when the
output is within 92% of regulation (typical). The
PWRGD delay is internally fixed at 200 µs (typical).

The overtemperature and short circuit current-limiting
provide additional protection for the LDO during system
fault conditions.

Package Types

© 2007 Microchip Technology Inc. DS22001C-page 1

MCP1827/MCP1827S

MCP1827 Adjustable Output Voltage

MCP1827 Fixed Output Voltage

V

OUT

= 1.8V @ 1A

VIN = 2.3V to 2.8V

On

Off

1µF

100 kΩ

4.7 µF

C

1

C

2

R

1

SHDN

V

IN

GND

V

OUT

PWRGD

20 kΩ

R

2

VAD J

12345

V

OUT

= 1.2V @ 1A

VIN = 2.3V to 2.8V

On

Off

1µF

40 kΩ

4.7 µF

C

1

C

2

R

1

SHDN

V

IN

GND

V

OUT

12345

Typical Application

DS22001C-page 2 © 2007 Microchip Technology Inc.

Functional Block Diagram - Adjustable Output

EA

+

–

V

OUT

PMOS

R

f

C

f

I

SNS

Overtemperature

V

REF

Comp

92% of V

REF

T

DELAY

V

IN

Driver w/limit

and SHDN

GND

Soft-Start

ADJ

Undervoltage

Lock Out

V

IN

Reference

SHDN

SHDN

SHDN

Sensing

(UVLO)

MCP1827/MCP1827S

© 2007 Microchip Technology Inc. DS22001C-page 3

MCP1827/MCP1827S

EA

+

–

V

OUT

PMOS

R

f

C

f

I

SNS

V

REF

Comp

92% of V

REF

T

DELAY

V

IN

GND

Soft-Start

Sense

V

IN

Reference

SHDN

SHDN

SHDN

PWRGD

Overtemperature

Driver w/limit

and SHDN

Undervoltage

Lock Out

Sensing

(UVLO)

Functional Block Diagram - Fixed Output (5 pin)

DS22001C-page 4 © 2007 Microchip Technology Inc.

Functional Block Diagram - Fixed Output (3-Pin)

EA

+

–

V

OUT

PMOS

R

f

C

f

I

SNS

V

REF

Comp

92% of V

REF

T

DELAY

V

IN

GND

Soft-Start

Sense

V

IN

Reference

SHDN

SHDN

SHDN

Overtemperature

Driver w/limit

and SHDN

Undervoltage

Lock Out

Sensing

(UVLO)

MCP1827/MCP1827S

© 2007 Microchip Technology Inc. DS22001C-page 5

MCP1827/MCP1827S

1.0 ELECTRICAL CHARACTERISTICS

† Notice: Stresses above those listed under “Maximum Rat-

ings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at
those or any other conditions above those indicated in the

Absolute Maximum Ratings †

VIN....................................................................................6.5V

Maximum Voltage on Any Pin.. (GND – 0.3V) to (V

DD

+ 0.3)V

operational listings of this specification is not implied. Expo­sure to maximum rating conditions for extended periods may
affect device reliability.

Maximum Power Dissipation......... Internally-Limited (Note 6)

Output Short Circuit Duration ................................ Continuous

Storage temperature .....................................-65°C to +150°C

Maximum Junction Temperature, T
ESD protection on all pins (HBM/MM)

...........................+150°C

J

........... ≥ 2kV; ≥ 200V

AC/DC CHARACTERISTICS

Electrical Specifications: Unless otherwise noted, V

I

= 1 mA, CIN = C

OUT

-40°C to +125°C

= 4.7 µF (X7R Ceramic), TA = +25°C. Boldface type applies for junction temperatures, TJ (Note 7) of

OUT

Parameters Sym Min Typ Max Units Conditions

Input Operating Voltage V
Input Quiescent Current I

Input Quiescent Current for
SHDN

Mode

Maximum Output Current I

Line Regulation

Load Regulation

Output Short Circuit Current I

I

ΔV

(V

OUT

ΔV

OUT/VOUT

OUT_SC

IN

q

SHDN

OUT

OUT

x ΔVIN)

/

Adjust Pin Characteristics (Adjustable Output Only)

Adjust Pin Reference Voltage V

Adjust Pin Leakage Current I
Adjust Temperature Coefficient TCV

ADJ

ADJ

OUT

Fixed-Output Characteristics (Fixed Output Only)
Note 1: The minimum V

must meet two conditions: V

IN

2: VR is the nominal regulator output voltage for the fixed cases. VR = 1.2V, 1.8V, etc. VR is the desired set point output

voltage for the adjustable cases. V

3: TCV

= (V

OUT

OUT-HIGH

temperature range. V

– V

OUT-LOW

R

) *106 / (VR * ΔTemperature). V

OUT-LOW

is the lowest voltage measured over the temperature range.

4: Load regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is

tested over a load range from 1 mA to the maximum specified output current.

5: Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below its

nominal value that was measured with an input voltage of V

6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction

temperature and the thermal resistance from junction to air. (i.e., T
dissipation will cause the device operating junction temperature to exceed the maximum +150°C rating. Sustained
junction temperatures above 150°C can impact device reliability.

7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the

desired junction temperature. The test time is small enough such that the rise in the junction temperature over the
ambient temperature is not significant.

IN

= V

OUT(MAX)

+ V

DROPOUT(MAX)

Note 1, VR=1.8V for Adjustable Output,

2.3 6.0 V Note 1
— 120 220 µA IL = 0 mA, VIN = Note 1,

V

= 0.8V to 5.0V

OUT

—0.1 3 µA SHDN = GND

1.5 —— AV

= 2.3V to 6.0V

IN

V

= 0.8V to 5.0V, Note 1

R

—0.050.16 %/V (Note 1)

-1.0 ±0.5 1.0 %I

—2.2— AV

= 1 mA to 1.5A,

OUT

V

= Note 1, (Note 4)

IN

= Note 1, R

IN

Peak Current

0.402 0.410 0.418 VVIN = 2.3V to VIN=6.0V,

I

= 1 mA

OUT

-10 ±0.01 +10 nA VIN = 6.0V, V
—40—ppm/°CNote 3

= V

≥ 2.3V and V

IN

((R1/R2)+1). Figure 4-1.

ADJ *

≥ V

IN

OUT(MAX)

OUT-HIGH

IN = VOUTMAX

, TJ, θJA). Exceeding the maximum allowable power

A

+ V

DROPOUT(MAX).

is the highest voltage measured over the

+ V

DROPOUT(MAX)

.

≤ V

IN

≤ 6V

LOAD

=0Vto6V

ADJ

<0.1Ω,

DS22001C-page 6 © 2007 Microchip Technology Inc.

MCP1827/MCP1827S

AC/DC CHARACTERISTICS (CONTINUED)

Electrical Specifications: Unless otherwise noted, V

I

= 1 mA, CIN = C

OUT

-40°C to +125°C

= 4.7 µF (X7R Ceramic), TA = +25°C. Boldface type applies for junction temperatures, TJ (Note 7) of

OUT

Parameters Sym Min Typ Max Units Conditions

Voltage Regulation V

OUT

Dropout Characteristics

Dropout Voltage V

IN-VOUT

Power Good Characteristics

PWRGD Input Voltage Operat-

V

PWRGD_VIN

ing Range

PWRGD Threshold Voltage
(Referenced to V

OUT

)

PWRGD Threshold Hysteresis V
PWRGD Output Voltage Low V

PWRGD Leakage P
PWRGD Time Delay T

Detect Threshold to PWRGD

V

PWRGD_TH

PWRGD_HYS

PWRGD_L

WRGD_LK

PG

T

VDET-PWRGD

Active Time Delay

Shutdown Input

Logic High Input V
Logic Low Input V

Input Leakage Current SHDN

SHDN

SHDN-HIGH

SHDN-LOW

ILK

AC Performance

Output Delay From SHDN

Output Noise e

Note 1: The minimum V

must meet two conditions: V

IN

T

OR

N

2: VR is the nominal regulator output voltage for the fixed cases. VR = 1.2V, 1.8V, etc. VR is the desired set point output

voltage for the adjustable cases. V

3: TCV

= (V

OUT

temperature range. V

OUT-HIGH

– V

OUT-LOW

R

) *106 / (VR * ΔTemperature). V

OUT-LOW

is the lowest voltage measured over the temperature range.

4: Load regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is

tested over a load range from 1 mA to the maximum specified output current.

5: Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below its

nominal value that was measured with an input voltage of V

6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction

temperature and the thermal resistance from junction to air. (i.e., T
dissipation will cause the device operating junction temperature to exceed the maximum +150°C rating. Sustained
junction temperatures above 150°C can impact device reliability.

7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the

desired junction temperature. The test time is small enough such that the rise in the junction temperature over the
ambient temperature is not significant.

= V

IN

OUT(MAX)

VR - 2.5% V

+ V

DROPOUT(MAX)

R

±0.5%

Note 1, VR=1.8V for Adjustable Output,

+ 2.5% V Note 2

V

R

— 330 600 mV Note 5, I

V

IN(MIN)

1.0 — 6.0 V TA = +25°C

1.2 — 6.0 T

= -40°C to +125°C

A

For V

%V

89 92 95 V
90 92 94 V

1.0 2.0 3.0 %V

—0.20.4 VI

—1—nAV

OUT

OUT

Falling Edge

OUT

OUT

PWRGD SINK

ADJ = 0V

PWRGD

— 200 — µs Rising Edge

R

PULLUP

— 200 — µs V

ADJ

20 mV to V

45 %VINVIN = 2.3V to 6.0V

15 %VINVIN = 2.3V to 6.0V

-0.1 ±0.001 +0.1 µA VIN= 6V, SHDN =VIN,

SHDN

100 µs SHDN = GND to VIN

V

OUT

—2.0—µV/√Hz I

OUT

= 10 µF (X7R Ceramic), V

2.5V

= V

≥ 2.3V and V

IN

((R1/R2)+1). Figure 4-1.

ADJ *

≥ V

IN

OUT(MAX)

OUT-HIGH

IN = VOUTMAX

, TJ, θJA). Exceeding the maximum allowable power

A

+ V

DROPOUT(MAX).

is the highest voltage measured over the

+ V

DROPOUT(MAX)

OUT

=2.3V

< 2.3V, I

IN

< 2.5V Fixed, V
>= 2.5V Fixed

= VIN = 6.0V

= 10 kΩ

or V

OUT

PWRGD_TH

= GND

= GND to 95% VR

= 200 mA, f = 1 kHz, C

.

= 1.5A,

SINK

= 1.2 mA,

= V

PWRGD_TH

= 100 µA

= Adj.

OUT

+

- 20 mV

OUT

OUT

=

© 2007 Microchip Technology Inc. DS22001C-page 7

MCP1827/MCP1827S

AC/DC CHARACTERISTICS (CONTINUED)

Electrical Specifications: Unless otherwise noted, V

I

= 1 mA, CIN = C

OUT

-40°C to +125°C

= 4.7 µF (X7R Ceramic), TA = +25°C. Boldface type applies for junction temperatures, TJ (Note 7) of

OUT

Parameters Sym Min Typ Max Units Conditions

Power Supply Ripple Rejection

PSRR — 60 — dB f = 100 Hz, C

Ratio

Thermal Shutdown Temperature T

Thermal Shutdown Hysteresis

Note 1: The minimum V

must meet two conditions: V

IN

ΔT

SD

SD

2: VR is the nominal regulator output voltage for the fixed cases. VR = 1.2V, 1.8V, etc. VR is the desired set point output

voltage for the adjustable cases. V

3: TCV

= (V

OUT

OUT-HIGH

temperature range. V

– V

OUT-LOW

R

) *106 / (VR * ΔTemperature). V

OUT-LOW

is the lowest voltage measured over the temperature range.

4: Load regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is

tested over a load range from 1 mA to the maximum specified output current.

5: Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below its

nominal value that was measured with an input voltage of V

6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction

temperature and the thermal resistance from junction to air. (i.e., T
dissipation will cause the device operating junction temperature to exceed the maximum +150°C rating. Sustained
junction temperatures above 150°C can impact device reliability.

7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the

desired junction temperature. The test time is small enough such that the rise in the junction temperature over the
ambient temperature is not significant.

= V

IN

= V

OUT(MAX)

+ V

DROPOUT(MAX)

Note 1, VR=1.8V for Adjustable Output,

— 150 — °C I

—10—°CI

≥ 2.3V and V

IN

((R1/R2)+1). Figure 4-1.

ADJ *

≥ V

IN

OUT(MAX)

OUT-HIGH

IN = VOUTMAX

, TJ, θJA). Exceeding the maximum allowable power

A

+ V

DROPOUT(MAX).

is the highest voltage measured over the

+ V

DROPOUT(MAX)

I

= 10 mA,

OUT

V

= 30 mV pk-pk,

INAC

C

= 0 µF

IN

= 100 µA, V

OUT

V

= 2.8V

IN

= 100 µA, V

OUT

V

= 2.8V

IN

.

OUT

= 10 µF,

= 1.8V,

OUT

= 1.8V,

OUT

TEMPERATURE SPECIFICATIONS

Electrical Specifications: Unless otherwise indicated, all limits apply for V

Parameters Sym Min Typ Max Units Conditions

Temperature Ranges

Operating Junction Temperature Range T
Maximum Junction Temperature T
Storage Temperature Range T

Thermal Package Resistances

Thermal Resistance, 5LD DDPAK θ
Thermal Resistance, 3LD DDPAK θ
Thermal Resistance, 5LD TO-220 θ
Thermal Resistance, 3LD TO-220 θ

J

J

A

JA

JA

JA

JA

-40 — +125 °C Steady State
— — +150 °C Transient

-65 — +150 °C

— 31.2 — °C/W 4-Layer JC51 Standard Board
— 31.4 — °C/W 4-Layer JC51 Standard Board
— 29.3 — °C/W 4-Layer JC51 Standard Board
— 29.4 — °C/W 4-Layer JC51 Standard Board

= 2.3V to 6.0V.

IN

DS22001C-page 8 © 2007 Microchip Technology Inc.

MCP1827/MCP1827S

90

100

110

120

130

140

150

23456

Input Voltage (V)

Quiescent Current (μA)

130°C

-45

°C

25

°C

90°C

V

OUT

= 1.2V Adj

I

OUT

= 0 mA

100

110

120

130

140

150

160

170

180

190

200

0 250 500 750 1000 1250 1500

Load Current (mA)

Ground Current (µA)

VIN=3.3V

V

OUT

= 1.2V Adj

VIN=5.0V

VIN=2.3V

100

105

110

115

120

125

130

135

140

-45 -20 5 30 55 80 105 130

Temperature (°C)

Quiescent Current (μA)

VIN=5.0V

VIN=2.5V

VIN=4.0V

I

OUT

= 0 mA

V

OUT

= 1.2V Adj

0

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

0.09

0.1

-45-20 5 305580105130

Temperature (°C)

Line Regulation (%/V)

V

OUT

V

IN

I

OUT

= 1 mA

I

OUT

= 500 mA

I

OUT

= 1000 mA

I

OUT

= 100 mA

-0.15

-0.10

-0.05

0.00

0.05

0.10

0.15

-45-20 5 305580105130

Temperature (°C)

Load Regulation (%)

I

OUT

= 1.0 mA to 1500 mA

V

OUT

= 5.0V

V

OUT

= 3.3V

V

OUT

= 0.8V

V

OUT

= 1.8V

0.408

0.409

0.409

0.410

0.410

0.411

-45 -20 5 30 55 80 105 130

Temperature (°C)

Adjust Pin Voltage (V)

I

OUT

= 1.0 mA

VIN = 6.0V

VIN = 2.3V

VIN = 5.0V

2.0 TYPICAL PERFORMANCE CURVES

Note: The graphs and tables provided following this note are a statistical summary based on a limited number of

samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

Note: Unless otherwise indicated, V
Ceramic (X7R), I

Note: Junction Temperature (T

= 1 mA, Temperature = +25°C, VIN = V

OUT

) is approximated by soaking the device under test to an ambient temperature equal to

J

the desired Junction temperature. The test time is small enough such that the rise in Junction temperature over the
Ambient temperature is not significant.

= 1.8V (Adjustable), VIN = 2.8V, C

OUT

OUT

+ 0.6V, R

= 4.7 µF Ceramic (X7R), CIN = 4.7 µF

OUT

= 10 kΩ To VIN.

PWRGD

= 2.3V to 6.0V

= 1.2V adj

FIGURE 2-1: Quiescent Current vs. Input Voltage (1.2V Adjustable).

FIGURE 2-2: Ground Current vs. Load Current (1.2V Adjustable).

FIGURE 2-4: Line Regulation vs. Temperature (1.2V Adjustable).

FIGURE 2-5: Load Regulation vs. Temperature (Adjstable Version).

FIGURE 2-3: Quiescent Current vs. Junction Temperature (1.2V Adjustable).

© 2007 Microchip Technology Inc. DS22001C-page 9

FIGURE 2-6: Adjust Pin Voltage vs. Temperature.

MCP1827/MCP1827S

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

0 250 500 750 1000 1250 1500

Load Current (mA)

Dropout Voltage (V)

V

OUT

= 2.5V Adj

V

OUT

= 5.0V Adj

0.30

0.32

0.34

0.36

0.38

0.40

0.42

-45 -20 5 30 55 80 105 130

Temperature (°C)

Dropout Voltage (V)

V

OUT

= 3.3V Adj

V

OUT

= 5.0V Adj

V

OUT

= 2.5V Adj

I

OUT

= 1.5A

300

310

320

330

340

350

360

370

-45 -20 5 30 55 80 105 130
Temperature (°C)

Power Good Time Delay (µs)

V

OUT

= 3.3V Fixed

VIN = 3.9V

VIN = 5.0V

VIN = 4.5V

80

90

100

110

120

130

140

150

23456

Input Voltage (V)

Quiescent Current (μA)

-45°C

+130°C

+85°C

+25°C

V

OUT

= 0.8V

I

OUT

= 0 mA

80

90

100

110

120

130

140

150

33.544.555.56

Input Voltage (V)

Quiescent Current (μA)

V

OUT

= 2.5V

I

OUT

= 0 mA

+130

°C

-45

°C

+25

°C

+90

°C

0.00

50.00

100.00

150.00

200.00

250.00

0 250 500 750 1000 1250 1500

Load Current (mA)

Ground Current (μA)

V

IN

= 2.3V for V

R

VIN = 3.1V for V

R

V

OUT

=0.8V

V

OUT

=2.5V

Note: Unless otherwise indicated, V

Ceramic (X7R), I

= 1 mA, Temperature = +25°C, VIN = V

OUT

= 1.8V (Adjustable), VIN = 2.8V, C

OUT

FIGURE 2-7: Dropout Voltage vs. Load Current (Adjustable Version).

= 4.7 µF Ceramic (X7R), CIN = 4.7 µF

+ 0.6V, R

OUT

OUT

= 10 kΩ To VIN.

PWRGD

FIGURE 2-10: Quiescent Current vs. Input Voltage (0.8V Fixed).

FIGURE 2-8: Dropout Voltage vs. Temperature (Adjustable Version).

FIGURE 2-9: Power Good (PWRGD) Time Delay vs. Temperature (Adjustable Version).

DS22001C-page 10 © 2007 Microchip Technology Inc.

FIGURE 2-11: Quiescent Current vs. Input Voltage (2.5V Fixed).

=0.8V
=2.5V

FIGURE 2-12: Ground Current vs. Load Current.

MCP1827/MCP1827S

95

100

105

110

115

120

125

130

-45 -20 5 30 55 80 105 130

Temperature (°C)

Quiescent Current (μA)

V

OUT

= 0.8V

V

OUT

= 2.5V

I

OUT

= 0 mA

0.00

0.05

0.10

0.15

0.20

0.25

0.30

-45 -20 5 30 55 80 105 130

Temperature (°C)

Ishdn (μA)

VIN = 2.3V

VIN = 4.0V

VIN = 6.0V

VR = 0.8V

0.00

0.02

0.04

0.06

0.08

0.10

-45-20 5 305580105130

Temperature (°C)

Line Regulation (%/V)

V

OUT

= 0.8V

V

IN

= 2.3V to 6.0V

I

OUT

= 1 mA

I

OUT

= 100 mA

I

OUT

= 500mA

I

OUT

= 1A

0.015

0.020

0.025

0.030

0.035

0.040

0.045

-45-20 5 305580105130

Temperature (°C)

Line Regulation (%/V)

I

OUT

= 1000 mA

I

OUT

= 1 mA

I

OUT

= 100 mA

I

OUT

= 1500 mA

I

OUT

= 500 mA

VR = 2.5V
V

IN

= 3.1 to 6.0V

-0.30

-0.20

-0.10

0.00

0.10

0.20

0.30

-45 -20 5 30 55 80 105 130

Temperature (°C)

Load Regulation (%)

V

OUT

= 0.8V

I

OUT

= 1 mA to 1500 mA

V

IN

-0.45

-0.40

-0.35

-0.30

-0.25

-0.20

-0.15

-0.10

-0.05

0.00

-45 -20 5 30 55 80 105 130

Temperature (°C)

Load Regulation (%)

V

OUT

= 2.5V

V

OUT

= 5.0V

I

OUT

= 1 mA to 1500 mA

Note: Unless otherwise indicated, V

Ceramic (X7R), I

= 1 mA, Temperature = +25°C, VIN = V

OUT

= 1.8V (Adjustable), VIN = 2.8V, C

OUT

FIGURE 2-13: Quiescent Current vs. Temperature.

= 4.7 µF Ceramic (X7R), CIN = 4.7 µF

OUT

PWRGD

= 10 kΩ To VIN.

OUT

+ 0.6V, R

FIGURE 2-16: Line Regulation vs. Temperature (2.5V Fixed).

= 2.3V

FIGURE 2-14: I

FIGURE 2-15: Line Regulation vs.

Temperature (0.8V Fixed).

© 2007 Microchip Technology Inc. DS22001C-page 11

SHDN

vs. Temperature.

FIGURE 2-17: Load Regulation vs.
Temperature (V

< 2.5V Fixed).

OUT

FIGURE 2-18: Load Regulation vs.
Temperature (V

≥ 2.5V Fixed).

OUT

MCP1827/MCP1827S

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

0.40

0 250 500 750 1000 1250 1500

Load Current (mA)

Dropout Voltage (V)

V

OUT

= 5.0V

V

OUT

= 2.5V

Temperature = 25°C

0.25

0.30

0.35

0.40

0.45

-45-20 5 305580105130

Temperature (°C)

Dropout Voltage (V)

I

OUT

V

OUT

= 2.5V

V

OUT

= 5.0V

0.00

0.50

1.00

1.50

2.00

2.50

3.00

3.0 3.5 4.0 4.5 5.0 5.5 6.0
Input Voltage (V)

Short Circuit Current (A)

V

OUT

Temperature = 25°

0.010

0.100

1.000

10.000

0.01 0.1 1 10 100 1000
Frequency (kHz)

Noise (µV/

√

Hz)

VR=0.8V, VIN=2.3V

VR=3.3V, VIN=4.1V

C

OUT

=1 μF ceramic X7R

C

IN

=10 μF ceramic

I

OUT

=200 mA

-80

-70

-60

-50

-40

-30

-20

-10

0

0.01 0.1 1 10 100 1000
Frequency (kHz)

PSRR (dB)

VR=1.2V Adj
C

OUT

=10 μF ceramic X7R

V

IN

=3.1V

C

IN

=0 μF

I

OUT

=10 mA

-80

-70

-60

-50

-40

-30

-20

-10

0

0.01 0.1 1 10 100 1000
Frequency (kHz)

PSRR (dB)

VR=1.2V Adj
C

OUT

=22 μF ceramic X7R

V

IN

=3.1V

C

IN

=0 μF

I

OUT

=10 mA

Note: Unless otherwise indicated, V

Ceramic (X7R), I

= 1 mA, Temperature = +25°C, VIN = V

OUT

= 1.8V (Adjustable), VIN = 2.8V, C

OUT

FIGURE 2-19: Dropout Voltage vs. Load Current.

= 1.5A

= 4.7 µF Ceramic (X7R), CIN = 4.7 µF

+ 0.6V, R

OUT

OUT

= 10 kΩ To VIN.

PWRGD

FIGURE 2-22: Output Noise Voltage Density vs. Frequency.

FIGURE 2-20: Dropout Voltage vs. Temperature.

FIGURE 2-21: Short Circuit Current vs. Input Voltage.

DS22001C-page 12 © 2007 Microchip Technology Inc.

= 2.5V

FIGURE 2-23: Power Supply Ripple
Rejection (PSRR) vs. Frequency (V

OUT

= 1.2V

Adj.).

C

FIGURE 2-24: Power Supply Ripple
Rejection (PSRR) vs. Frequency (V

OUT

= 1.2V

Adj.).

MCP1827/MCP1827S

-80

-70

-60

-50

-40

-30

-20

-10

0

0.01 0.1 1 10 100 1000

Frequency (kHz)

PSRR (dB)

VR=3.3V Fixed
C

OUT

=10 μF ceramic X7R

V

IN

=3.9V

C

IN

=0 μF

I

OUT

=10 mA

-80

-70

-60

-50

-40

-30

-20

-10

0

0.01 0.1 1 10 100 1000

Frequency (kHz)

PSRR (dB)

VR=3.3V Fixed
C

OUT

=22 μF ceramic X7R

V

IN

=3.9V

C

IN

=0 μF

I

OUT

=10 mA

Note: Unless otherwise indicated, V

Ceramic (X7R), I

= 1 mA, Temperature = +25°C, VIN = V

OUT

= 1.8V (Adjustable), VIN = 2.8V, C

OUT

FIGURE 2-25: Power Supply Ripple
Rejection (PSRR) vs. Frequency (V

OUT

= 3.3V

Fixed).

= 4.7 µF Ceramic (X7R), CIN = 4.7 µF

OUT

PWRGD

= 10 kΩ To VIN.

OUT

+ 0.6V, R

FIGURE 2-28: 2.5V (Adj.) Startup from Shutdown.

FIGURE 2-26: Power Supply Ripple
Rejection (PSRR) vs. Frequency (V
Fixed).

FIGURE 2-27: 2.5V (Adj.) Startup from V

© 2007 Microchip Technology Inc. DS22001C-page 13

OUT

= 3.3V

FIGURE 2-29: Power Good (PWRGD) Timing.

.

IN

FIGURE 2-30: Dynamic Line Response (3.3V Fixed).

MCP1827/MCP1827S

Note: Unless otherwise indicated, V

Ceramic (X7R), I

= 1 mA, Temperature = +25°C, VIN = V

OUT

= 1.8V (Adjustable), VIN = 2.8V, C

OUT

FIGURE 2-31: Dynamic Load Response
(3.3V Fixed, 10 mA to 1500 mA).

= 4.7 µF Ceramic (X7R), CIN = 4.7 µF

+ 0.6V, R

OUT

OUT

= 10 kΩ To VIN.

PWRGD

FIGURE 2-32: Dynamic Load Response
(3.3V Fixed, 100 mA to 1500 mA).

DS22001C-page 14 © 2007 Microchip Technology Inc.

3.0 PIN DESCRIPTION

The descriptions of the pins are listed in Table 3-1.

TABLE 3-1: PIN FUNCTION TABLE

MCP1827/MCP1827S

3-Pin Fixed

Output

—

122V
233GNDGround
344V

—

——

Pad Pad Pad EP Exposed Pad of the Package (ground potential)

3.1 Input Voltage Supply (VIN)

Connect the unregulated or regulated input voltage
source to V
several inches away from the LDO, or the input source
is a battery, it is recommended that an input capacitor
be used. A typical input capacitance value of 1 µF to
10 µF should be sufficient for most applications.

3.2 Shutdown Control Input (SHDN)

The SHDN input is used to turn the LDO output voltage
on and off. When the SHDN input is at a logic-high
level, the LDO output voltage is enabled. When the

input is pulled to a logic-low level, the LDO

SHDN
output voltage is disabled. When the SHDN input is
pulled low, the PWRGD output also goes low and the
LDO enters a low quiescent current shutdown state
where the typical quiescent current is 0.1 µA.

5-Pin Fixed

Output

1 1 SHDN Shutdown Control Input (active-low)

5

. If the input voltage source is located

IN

Adjustable

Output

—

5 ADJ Voltage Adjust/Sense Input

Name Description

IN

OUT

PWRGD Power Good Output

Input Voltage Supply

Regulated Output Voltage

3.4 Power Good Output (PWRGD)

The PWRGD output is an open-drain output used to
indicate when the LDO output voltage is within 92%
(typically) of its nominal regulation value. The PWRGD
threshold has a typical hysteresis value of 2%. The
PWRGD output is delayed by 200 µs (typical) from the
time the LDO output is within 92% + 3% (max
hysteresis) of the regulated output value on power-up.
This delay time is internally fixed.

3.5 Output Voltage Adjust Input (ADJ)

For adjustable applications, the output voltage is
connected to the ADJ input through a resistor divider
that sets the output voltage regulation value. This
provides the user the capability to set the output
voltage to any value they desire within the 0.8V to 5.0V
range of the device.

3.3 Ground (GND)

Connect the GND pin of the LDO to a quiet circuit
ground. This will help the LDO power supply rejection
ratio and noise performance. The ground pin of the
LDO only conducts the quiescent current of the LDO
(typically 120 µA), so a heavy trace is not required.
For applications have switching or noisy inputs tie the
GND pin to the return of the output capacitor. Ground
planes help lower inductance and voltage spikes
caused by fast transient load currents and are
recommended for applications that are subjected to
fast load transients.

© 2007 Microchip Technology Inc. DS22001C-page 15

3.6 Regulated Output Voltage (V

The V
LDO. A minimum output capacitance of 1.0 µF is
required for LDO stability. The MCP1827/MCP1827S is
stable with ceramic, tantalum and aluminum-electro­lytic capacitors. See Section 4.3 “Output Capacitor”
for output capacitor selection guidance.

pin is the regulated output voltage of the

OUT

OUT

)

3.7 Exposed Pad (EP)

The DDPAK and TO-220 package have an exposed tab
on the package. A heat sink may be mount to the tab to
aid in the removal of heat from the package during
operation. The exposed tab is at the ground potential of
the LDO.

MCP1827/MCP1827S

V

OUTVADJ

R1R2+

R

2

------------------

⎝⎠

⎛⎞

=

Where:

V

OUT

= LDO Output Voltage

V

ADJ

=ADJ Pin Voltage

(typically 0.41V)

SHDN

GND

ADJ

2

1µF

V

OUT

4.7 µF

V

IN

On

Off

R

1

R

2

C

1

C2

MCP1827-ADJ

1

3

4

5

R1R

2

V

OUTVADJ

–

V

ADJ

--------------------------------

⎝⎠

⎛⎞

=

Where:

V

OUT

= LDO Output Voltage

V

ADJ

=ADJ Pin Voltage

(typically 0.41V)

4.0 DEVICE OVERVIEW

The MCP1827/MCP1827S is a high output current,
Low Dropout (LDO) voltage regulator. The low dropout
voltage of 330 mV typical at 1.5A of current makes it
ideal for battery-powered applications. Unlike other
high output current LDOs, the MCP1827/MCP1827S
only draws a maximum of 220 µA of quiescent current.
The MCP1827 has a shutdown control input and a
power good output.

4.1 LDO Output Voltage

The 5-pin MCP1827 LDO is available with either a fixed
output voltage or an adjustable output voltage. The
output voltage range is 0.8V to 5.0V for both versions.
The 3-pin MCP1827S LDO is available as a fixed
voltage device.

4.1.1 ADJUST INPUT

The adjustable version of the MCP1827 uses the ADJ
pin (pin 5) to get the output voltage feedback for output
voltage regulation. This allows the user to set the
output voltage of the device with two external resistors.
The nominal voltage for ADJ is 0.41V.

Figure 4-1 shows the adjustable version of the
MCP1827. Resistors R
divider network necessary to set the output voltage.
With this configuration, the equation for setting V

EQUATION 4-1:

and R2 form the resistor

1

OUT

is:

EQUATION 4-2:

4.2 Output Current and Current Limiting

The MCP1827/MCP1827S LDO is tested and ensured
to supply a minimum of 1.5A of output current. The
MCP1827/MCP1827S has no minimum output load, so
the output load current can go to 0 mA and the LDO will
continue to regulate the output voltage to within
tolerance.

The MCP1827/MCP1827S also incorporates an output
current limit. If the output voltage falls below 0.7V due
to an overload condition (usually represents a shorted
load condition), the output current is limited to 2.2A
(typical). If the overload condition is a soft overload, the
MCP1827/MCP1827S will supply higher load currents
of up to 3A. The MCP1827/MCP1827S should not be
operated in this condition continuously as it may result
in failure of the device. However, this does allow for
device usage in applications that have higher pulsed
load currents having an average output current value of

1.5A or less.

Output overload conditions may also result in an
over-temperature shutdown of the device. If the
junction temperature rises above 150°C, the LDO will
shut down the output voltage. See Section 4.8
“Overtemperature Protection” for more information
on overtemperature shutdown.

FIGURE 4-1: Typical adjustable output voltage application circuit.

The allowable resistance value range for resistor R2 is
from 10 kΩ to 200 kΩ. Solving the equation for R
yields the following equation:

DS22001C-page 16 © 2007 Microchip Technology Inc.

4.3 Output Capacitor

The MCP1827/MCP1827S requires a minimum output
capacitance of 1 µF for output voltage stability. Ceramic
capacitors are recommended because of their size,
cost and environmental robustness qualities.

Aluminum-electrolytic and tantalum capacitors can be
used on the LDO output as well. The Equivalent Series
Resistance (ESR) of the electrolytic output capacitor
must be no greater than 1 ohm. The output capacitor
should be located as close to the LDO output as is
practical. Ceramic materials X7R and X5R have low
temperature coefficients and are well within the
acceptable ESR range required. A typical 1 µF X7R
0805 capacitor has an ESR of 50 milli-ohms.

Larger LDO output capacitors can be used with the

1

MCP1827/MCP1827S to improve dynamic
performance and power supply ripple rejection
performance. A maximum of 22 µF is recommended.
Aluminum-electrolytic capacitors are not recom­mended for low-temperature applications of ≤ 25°C.

4.4 Input Capacitor

T

PG

T

VDET_PWRGD

V

PWRGD_TH

V

OUT

PWRGD

V

OL

V

OH

V

IN

SHDN

V

OUT

30 µs

70 µs

T

OR

PWRGD

T

PG

Low input source impedance is necessary for the LDO
output to operate properly. When operating from
batteries, or in applications with long lead length
(> 10 inches) between the input source and the LDO,
some input capacitance is recommended. A minimum
of 1.0 µF to 4.7 µF is recommended for most
applications.

For applications that have output step load
requirements, the input capacitance of the LDO is very
important. The input capacitance provides the LDO
with a good local low-impedance source to pull the
transient currents from in order to respond quickly to
the output load step. For good step response
performance, the input capacitor should be of
equivalent (or higher) value than the output capacitor.
The capacitor should be placed as close to the input of
the LDO as is practical. Larger input capacitors will also
help reduce any high-frequency noise on the input and
output of the LDO and reduce the effects of any
inductance that exists between the input source
voltage and the input capacitance of the LDO.

MCP1827/MCP1827S

FIGURE 4-2: Power Good Timing.

4.5 Power Good Output (PWRGD)

The PWRGD output is used to indicate when the output
voltage of the LDO is within 92% (typical value, see
Section 1.0 “Electrical Characteristics” for Minimum
and Maximum specifications) of its nominal regulation
value.

As the output voltage of the LDO rises, the PWRGD
output will be held low until the output voltage has
exceeded the power good threshold plus the hysteresis
value. Once this threshold has been exceeded, the
power good time delay is started (shown as T
Electrical Characteristics table). The power good time
delay is fixed at 200 µs (typical). After the time delay
period, the PWRGD output will go high, indicating that
the output voltage is stable and within regulation limits.

If the output voltage of the LDO falls below the power
good threshold, the power good output will transition
low. The power good circuitry has a 170 µs delay when
detecting a falling output voltage, which helps to
increase noise immunity of the power good output and
avoid false triggering of the power good output during
fast output transients. See Figure 4-2 for power good
timing characteristics.

When the LDO is put into Shutdown mode using the

input, the power good output is pulled low

SHDN
immediately, indicating that the output voltage will be
out of regulation. The timing diagram for the power
good output when using the shutdown input is shown in
Figure 4-3.

The power good output is an open-drain output that can
be pulled up to any voltage that is equal to or less than
the LDO input voltage. This output is capable of sinking

1.2 mA (V

PWRGD

< 0.4V maximum).

PG

in the

FIGURE 4-3: Power Good Timing from Shutdown.

4.6 Shutdown Input (SHDN)

The SHDN input is an active-low input signal that turns
the LDO on and off. The SHDN
percentage of the input voltage. The typical value of
this shutdown threshold is 30% of VIN, with minimum
and maximum limits over the entire operating
temperature range of 45% and 15%, respectively.

The SHDN

input will ignore low-going pulses (pulses
meant to shut down the LDO) that are up to 400 ns in
pulse width. If the shutdown input is pulled low for more
than 400 ns, the LDO will enter Shutdown mode. This
small bit of filtering helps to reject any system noise
spikes on the shutdown input signal.

On the rising edge of the SHDN
circuitry has a 30 µs delay before allowing the LDO
output to turn on. This delay helps to reject any false
turn-on signals or noise on the SHDN

threshold is a

input, the shutdown

input signal. After

© 2007 Microchip Technology Inc. DS22001C-page 17

MCP1827/MCP1827S

SHDN

V

OUT

30 µs

70 µs

T

OR

400 ns (typ)

the 30 µs delay, the LDO output enters its soft-start
period as it rises from 0V to its final regulation value. If
the SHDN input signal is pulled low during the 30 µs
delay period, the timer will be reset and the delay time
will start over again on the next rising edge of the

input. The total time from the SHDN input going

SHDN
high (turn-on) to the LDO output being in regulation is
typically 100 µs. See Figure 4-4 for a timing diagram of
the SHDN

input.

FIGURE 4-4: Shutdown Input Timing Diagram.

4.7 Dropout Voltage and Undervoltage Lockout

4.8 Overtemperature Protection

The MCP1827/MCP1827S LDO has tempera­ture-sensing circuitry to prevent the junction tempera­ture from exceeding approximately 150
junction temperature does reach 150°C, the LDO
output will be turned off until the junction temperature
cools to approximately 140

°C, at which point the LDO

output will automatically resume normal operation. If
the internal power dissipation continues to be
excessive, the device will again shut off. The junction
temperature of the die is a function of power
dissipation, ambient temperature and package thermal
resistance. See Section 5.0 “Application Cir-
cuits/Issues” for more information on LDO power
dissipation and junction temperature.

°C. If the LDO

Dropout voltage is defined as the input-to-output
voltage differential at which the output voltage drops
2% below the nominal value that was measured with a

+ 0.6V differential applied. The

V

R

MCP1827/MCP1827S LDO has a very low dropout
voltage specification of 330 mV (typical) at 1.5A of out­put current. See Section 1.0 “Electrical Characteris-
tics” for maximum dropout voltage specifications.

The MCP1827/MCP1827S LDO operates across an
input voltage range of 2.3V to 6.0V and incorporates
input Undervoltage Lockout (UVLO) circuitry that keeps
the LDO output voltage off until the input voltage
reaches a minimum of 2.18V (typical) on the rising
edge of the input voltage. As the input voltage falls, the
LDO output will remain on until the input voltage level
reaches 2.04V (typical).

Since the MCP1827/MCP1827S LDO undervoltage
lockout activates at 2.04V as the input voltage is falling,
the dropout voltage specification does not apply for
output voltages that are less than 1.9V.

For high-current applications, voltage drops across the
PCB traces must be taken into account. The trace
resistances can cause significant voltage drops
between the input voltage source and the LDO. For
applications with input voltages near 2.3V, these PCB
trace voltage drops can sometimes lower the input
voltage enough to trigger a shutdown due to
undervoltage lockout.

DS22001C-page 18 © 2007 Microchip Technology Inc.

MCP1827/MCP1827S

10 µF

V

OUT

= 2.5V @ 1.5A

R

1

C

2

10 kΩ

PWRGD

SHDN

GND

2

4.7 µF

On

Off

C

1

MCP1827-2.5

1

3

4

5

3.3V

V

IN

P

LDO

V

IN MAX)()VOUT MIN()

–()I

OUT MAX )()

×=

Where:

P

LDO

= LDO Pass device internal

power dissipation

V

IN(MAX)

= Maximum input voltage

V

OUT(MIN)

= LDO minimum output voltage

P

IGND()VIN MAX()IVIN

×=

Where:

P

I(GND

= Power dissipation due to the

quiescent current of the LDO

V

IN(MAX)

= Maximum input voltage

I

VIN

= Current flowing in the VIN pin

with no LDO output current
(LDO quiescent current)

T

JMAX()PTOTALRθJA

× T

AMAX

+=

T

J(MAX)

= Maximum continuous junction

temperature

P

TOTAL

= Total device power dissipation

Rθ

JA

= Thermal resistance from junction to

ambient

T

AMAX

= Maximum ambient temperature

5.0 APPLICATION CIRCUITS/ISSUES

5.1 Typical Application

The MCP1827/MCP1827S is used for applications that
require high LDO output current and a power good
output.

FIGURE 5-1: Typical Application Circuit.

5.1.1 APPLICATION CONDITIONS

Package Type = TO-220-5

Input Voltage Range = 3.3V ± 5%

V

maximum = 3.465V

IN

V

minimum = 3.135V

IN

V

DROPOUT (max)

V

(typical) = 2.5V

OUT

P

(typical) = 1.2W

DISS

Temperature Rise = 35.2

5.2 Power Calculations

= 0.550V

I

= 1.5A maximum

OUT

°C

In addition to the LDO pass element power dissipation,
there is power dissipation within the
MCP1827/MCP1827S as a result of quiescent or
ground current. The power dissipation as a result of the
ground current can be calculated using the following
equation:

EQUATION 5-2:

The total power dissipated within the
MCP1827/MCP1827S is the sum of the power dissi­pated in the LDO pass device and the P(I
Because of the CMOS construction, the typical I
the MCP1827/MCP1827S is 120 µA. Operating at a
maximum of 3.465V results in a power dissipation of

0.49 milli-Watts. For most applications, this is small
compared to the LDO pass device power dissipation
and can be neglected.

The maximum continuous operating junction
temperature specified for the MCP1827/MCP1827S is

°C. To estimate the internal junction temperature

+125
of the MCP1827/MCP1827S, the total internal power
dissipation is multiplied by the thermal resistance from
junction to ambient (Rθ

) of the device. The thermal

JA

resistance from junction to ambient for the TO-220-5
package is estimated at 29.3

° C/W.

GND

) term.

for

GND

5.2.1 POWER DISSIPATION

The internal power dissipation within the
MCP1827/MCP1827S is a function of input voltage,
output voltage, output current and quiescent current.
Equation 5-1 can be used to calculate the internal
power dissipation for the LDO.

EQUATION 5-1:

© 2007 Microchip Technology Inc. DS22001C-page 19

EQUATION 5-3:

MCP1827/MCP1827S

P

DMAX()

T

JMAX()TAMAX()

–()

Rθ

JA

---------------------------------------------------=

P

D(MAX)

= Maximum device power dissipation

T

J(MAX)

= maximum continuous junction

temperature

T

A(MAX)

= maximum ambient temperature

Rθ

JA

= Thermal resistance from junction to

ambient

T

JRISE()PDMAX()RθJA

×=

T

J(RISE)

= Rise in device junction temperature

over the ambient temperature

P

D(MAX)

= Maximum device power dissipation

Rθ

JA

= Thermal resistance from junction to

ambient

TJT

JRISE()TA

+=

T

J

= Junction temperature

T

J(RISE)

= Rise in device junction temperature

over the ambient temperature

T

A

= Ambient temperature

The maximum power dissipation capability for a
package can be calculated given the
junction-to-ambient thermal resistance and the maxi­mum ambient temperature for the application.
Equation 5-4 can be used to determine the package
maximum internal power dissipation.

EQUATION 5-4:

EQUATION 5-5:

5.3 Typical Application

Internal power dissipation, junction temperature rise,
junction temperature and maximum power dissipation
is calculated in the following example. The power
dissipation as a result of ground current is small
enough to be neglected.

5.3.1 POWER DISSIPATION EXAMPLE

Package

Package Type = TO-220-5

Input Voltage

V

= 3.3V ± 5%

IN

LDO Output Voltage and Current

V

= 2.5V

OUT

I

= 1.5A

OUT

Maximum Ambient Temperature

T

Internal Power Dissipation

P

LDO(MAX)

=60°C

A(MAX)

=(V

P

= ((3.3V x 1.05) – (2.5V x 0.975))

LDO

IN(MAX)

– V

OUT(MIN)

x 1.5A

P

=1.54 Watts

LDO

) x I

OUT(MAX)

EQUATION 5-6:

5.3.1.1 Device Junction Temperature Rise

The internal junction temperature rise is a function of
internal power dissipation and the thermal resistance
from junction-to-ambient for the application. The
thermal resistance from junction-to-ambient (Rθ
derived from EIA/JEDEC standards for measuring
thermal resistance. The EIA/JEDEC specification is
JESD51. The standard describes the test method and
board specifications for measuring the thermal
resistance from junction to ambient. The actual thermal
resistance for a particular application can vary
depending on many factors such as copper area and
thickness. Refer to AN792, “A Method to Determine

How Much Power a SOT23 Can Dissipate in an
Application” (DS00792), for more information regarding

this subject.

T

J(RISE)

T

JRISE

T

JRISE

=P
= 1.54 W x 29.3° C/W
= 45.12°C

TOTAL

x Rθ

JA

JA

) is

DS22001C-page 20 © 2007 Microchip Technology Inc.

5.3.1.2 Junction Temperature Estimate

To estimate the internal junction temperature, the
calculated temperature rise is added to the ambient or
offset temperature. For this example, the worst-case
junction temperature is estimated below:

MCP1827/MCP1827S

=T

T

J

TJ = 45.12°C + 60.0°C
T

= 105.12°C

J

As you can see from the result, this application will be
operating within the maximum operating junction
temperature of 125°C.

JRISE

+ T

A(MAX)

5.3.1.3 Maximum Package Power

Dissipation at 60°C Ambient
Temperature

TO-220-5 (29.3° C/W RθJA):

P
P

DDPAK-5 (31.2°C/Watt Rθ

P
P

From this table you can see the difference in maximum
allowable power dissipation between the TO-220-5
package and the DDPAK-5 package.

= (125°C – 60°C) / 29.3° C/W

D(MAX)

= 2.218W

D(MAX)

JA

= (125°C – 60°C)/ 31.2° C/W

D(MAX)

= 2.083W

D(MAX)

):

© 2007 Microchip Technology Inc. DS22001C-page 21

MCP1827/MCP1827S

Example:

Legend: XX...X Customer-specific information

Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
* This package is Pb-free. The Pb-free JEDEC designator ( )

can be found on the outer packaging for this package.

Note: In the event the full Microchip part number cannot be marked on one line, it will

be carried over to the next line, thus limiting the number of available
characters for customer-specific information.

3-Lead DDPAK (MCP1827S)

5-Lead DDPAK (Fixed) (MCP1827)

3-Lead TO-220 (MCP1827S)

5-Lead TO-220 (Adj) (MCP1827)

12345

12345

1

23

123

XXXXXXXXX
XXXXXXXXX

YYWWNNN

XXXXXXXXX
XXXXXXXXX

YYWWNNN

XXXXXXXXX
XXXXXXXXX

YYWWNNN

XXXXXXXXX
XXXXXXXXX

YYWWNNN

123

MCP1827S

0.8EEB^^
0630256

123

MCP1827S

12EAB^^
0630256

12345

MCP1827

1.0EET^^
0630256

12345

MCP1827

08EAT^^
0630256

Example:

Example:

Example:

3

e

6.0 PACKAGING INFORMATION

6.1 Package Marking Information

3

e

3

e

3

e

3

e

3

e

DS22001C-page 22 © 2007 Microchip Technology Inc.

MCP1827/MCP1827S

3-Lead Plastic (EB) [DDPAK]

Notes:

1. § Significant Characteristic.

2. Dimensions D and E do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .005" per side.

3. Dimensioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.

Note: For the most current package drawings, please see the Microchip Packaging Specification located at

http://www.microchip.com/packaging

Units INCHES

Dimension Limits MIN NOM MAX
Number of Pins N 3
Pitch e .100 BSC
Overall Height A .160 – .190
Standoff § A1 .000 – .010
Overall Width E .380 – .420
Exposed Pad Width E1 .245 – –
Molded Package Length D . 330 – .380
Overall Length H .549 – . 625
Exposed Pad Length D1 .270 – –
Lead Thickness c .014 – .029
Pad Thickness C2 .045 – .065
Lower Lead Width b .020 – .039
Upper Lead Width b1 .045 – .070
Foot Length L .068 – .110
Pad Length L1 – – .067
Foot Angle φ 0° – 8°

E

E1

H

L1

D

D1

N

1

e

b

b1

c

C2

L

A

A1

BOTTOM VIEW

TOP VIEW

CHAMFER
OPTIONAL

φ

Microchip Technology Drawing C04-011B

© 2007 Microchip Technology Inc. DS22001C-page 23

MCP1827/MCP1827S

3-Lead Plastic Transistor Outline (AB) [TO-220]

Notes:

1. Dimensions D and E do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .005" per side.

2. Dimensioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.

Note: For the most current package drawings, please see the Microchip Packaging Specification located at

http://www.microchip.com/packaging

Units INCHES

Dimension Limits MIN NOM MAX
Number of Pins N 3
Pitch e .100 BSC
Overall Pin Pitch e1 .200 BSC
Overall Height A .140 – .190
Tab Thickness A1 .020 – .055
Base to Lead A2 .080 – .115
Overall Width E .357 – .420
Mounting Hole Center Q .100 – .120
Overall Length D .560 – .650
Molded Package Length D1 .330 – .355
Tab Length H1 .230 – .270
Mounting Hole Diameter φP .139 – .156
Lead Length L .500 – .580
Lead Shoulder L1 – – .250
Lead Thickness c .012 – .024
Lead Width b .015 .027 .040
Shoulder Width b2 . 045 .057 .070

E

Q

D

D1

L1

L

1

2

e

e1

b

b2

N

A2

c

H1

A1

A

P

CHAMFER
OPTIONAL

φ

Microchip Technology Drawing C04-034B

DS22001C-page 24 © 2007 Microchip Technology Inc.

MCP1827/MCP1827S

5-Lead Plastic (ET) [DDPAK]

Notes:

1. § Significant Characteristic.

2. Dimensions D and E do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .005" per side.

3. Dimens ioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.

Note: For the most current package drawings, please see the Microchip Packaging Specification located at

http://www.microchip.com/packaging

Units INCHES

Dimension Limits MIN NOM MAX
Number of Pins N 5
Pitch e .067 BSC
Overall Height A .160 – .190
Standoff § A1 .000 – .010
Overall Width E .380 – .420
Exposed Pad Width E1 .245 – –
Molded Package Length D .330 – .380
Overall Length H .549 – .625
Exposed Pad Length D1 .270 – –
Lead Thickness c .014 – .029
Pad Thickness C2 .045 – .065
Lead Width b .020 – .039
Foot Length L .068 – .110
Pad Length L1 – – .067
Foot Angle φ 0° – 8°

E

L1

D

D1

H

N

1

b

e

TOP VIEW

BOTTOM VIEW

A

A1

c

L

C2

CHAMFER
OPTIONAL

E1

φ

Microchip Technology Drawing C04-012B

© 2007 Microchip Technology Inc. DS22001C-page 25

MCP1827/MCP1827S

5-Lead Plastic Transistor Outline (AT) [TO-220]

Notes:

1. Dimensions D and E do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .005" per side.

2. Dimens ioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.

Note: For the most current package drawings, please see the Microchip Packaging Specification located at

http://www.microchip.com/packaging

Units INCHES

Dimension Limits MIN NOM MAX
Number of Pins N 5
Pitch e .067 BSC
Overall Pin Pitch e1 .268 BSC
Overall Height A .140 – .190
Overall Width E .380 – .420
Overall Length D .560 – .650
Molded Package Length D1 .330 – . 355
Tab Length H1 .204 – .293
Tab Thickness A1 .020 – . 055
Mounting Hole Center Q .100 – .120
Mounting Hole Diameter φP .139 – .156
Lead Length L .482 – .590
Base to Bottom of Lead A2 .080 – .115
Lead Thickness c .012 – .025
Lead Width b .015 .027 .040

E

Q

D

D1

H1

A

A1

A2

c

N

e

e1

b

1

2

3

L

CHAMFER
OPTIONAL

Pφ

Microchip Technology Drawing C04-036B

DS22001C-page 26 © 2007 Microchip Technology Inc.

APPENDIX A: REVISION HISTORY

Revision C (February 2007)

• Figure 2-22: Revised label on Y-axis.

• Section 2.0 “Typical Performance Curves”:

Added note on Junction Temperature.

• Pages 9-14: Revised notes.

Revision B (September 2006)

• Correction to maximum Dropout Voltage in
Section 1.0.

• Added additional graphs in Section 2.0.

• Added disclaimer to package outline drawings.

Revision A (July 2006)

• Original Release of this Document.

MCP1827/MCP1827S

© 2007 Microchip Technology Inc. DS22001C-page 27

MCP1827/MCP1827S

NOTES:

DS22001C-page 28 © 2007 Microchip Technology Inc.

MCP1827/MCP1827S

Device: MCP1827: 1.5A Low Dropout Regulator

MCP1827T: 1.5A Low Dropout Regulator

Tape and Reel
MCP1827S: 1.5A Low Dropout Regulator
MCP1827ST: 1.5A Low Dropout Regulator

Tape and Reel

Output Voltage *: 08 = 0.8V “Standard”

12 = 1.2V “Standard”
18 = 1.8V “Standard”
25 = 2.5V “Standard”
30 = 3.0V “Standard”
33 = 3.3V “Standard”
50 = 5.0V “Standard”

*Contact factory for other output voltage options

Extra Feature Code: 0 = Fixed

Tolerance: 2 = 2.0% (Standard)

Temperature: E = -40°C to +125°C

Package Type: AB = Plastic Transistor Outline, TO-220, 3-lead

AT = Plastic Transistor Outline, TO-220, 5-lead
EB = Plastic, DDPAK, 3-lead
ET = Plastic, DDPAK, 5-lead

PART NO. XXX

Output Feature

Code

Device

Vol tag e

X

Tol era nceX/Tem p.XXPackage

Examples:

a) MCP1827-0802E/AT: 0.8V LDO Regulator

5LD TO-220

b) MCP1827-1002E/ET: 1.0V LDO Regulator

5LD DDPAK

c) MCP1827-1202E/AT: 1.2V LDO Regulator

5LD TO-220

d) MCP1827-1802E/AT: 1.8V LDO Regulator

5LD TO-220

e) MCP1827-2502E/ET: 2.5V LDO Regulator

5LD DDPAK

f) MCP1827-3002E/ET: 3.0V LDO Regulator

5LD DDPAK

g) MCP1827-3302E/AT 3.3V LDO Regulator

5LD TO-220

h) MCP1827-5002E/ET: 5.0V LDO Regulator

5LD DDPAK

i) MCP1827-ADJE/AT: ADJ LDO Regulator

5LD TO-220

a) MCP1827S-0802E/EB:0.8V LDO Regulator

3LD DDPAK

b) MCP1827S-0802E/AB:0.8V LDO Regulator

3LD TO-220

c) MCP1827S-1002E/EB:1.0V LDO Regulator

3LD DDPAK

d) MCP1827S-1202E/AB 1.2V LDO Regulator

3LD TO-220

e) MCP1827S-1802E/EB 1.8V LDO Regulator

3LD DDPAK

f) MCP1827S-2502E/EB 2.5V LDO Regulator

3LD DDPAK

g) MCP1827S-2502E/EB 3.0V LDO Regulator

3LD DDPAK

h) MCP1827S-3302E/AB 3.3V LDO Regulator

3LD TO-220

i) MCP1827S-5002E/EB 5.0V LDO Regulator

3LD DDPAK

j) MCP1827S-ADJE/AB ADJ LDO Regulator

3LD TO-220

PRODUCT IDENTIFICATION SYSTEM

To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.

© 2007 Microchip Technology Inc. DS22001C-page 29

MCP1827/MCP1827S

NOTES:

DS22001C-page 30 © 2007 Microchip Technology Inc.

Note the following details of the code protection feature on Microchip devices:

• Microchip products meet the specification contained in their particular Microchip Data Sheet.

• Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.

• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.

• Microchip is willing to work with the customer who is concerned about the integrity of their code.

• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”

Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.

Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.

Trademarks

The Microchip name and logo, the Microchip logo, Accuron,
dsPIC, K

EELOQ, KEELOQ logo, microID, MPLAB, PIC,

PICmicro, PICSTART, PRO MATE, PowerSmart, rfPIC, and
SmartShunt are registered trademarks of Microchip
Technology Incorporated in the U.S.A. and other countries.

AmpLab, FilterLab, Linear Active Thermistor, Migratable
Memory, MXDEV, MXLAB, PS logo, SEEVAL, SmartSensor
and The Embedded Control Solutions Company are
registered trademarks of Microchip Technology Incorporated
in the U.S.A.

Analog-for-the-Digital Age, Application Maestro, CodeGuard,
dsPICDEM, dsPICDEM.net, dsPICworks, ECAN,
ECONOMONITOR, FanSense, FlexROM, fuzzyLAB,
In-Circuit Serial Programming, ICSP, ICEPIC, Mindi, MiWi,
MPASM, MPLAB Certified logo, MPLIB, MPLINK, PICkit,
PICDEM, PICDEM.net, PICLAB, PICtail, PowerCal,
PowerInfo, PowerMate, PowerTool, REAL ICE, rfLAB,
rfPICDEM, Select Mode, Smart Serial, SmartTel, Total
Endurance, UNI/O, WiperLock and ZENA are trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.

SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.

All other trademarks mentioned herein are property of their
respective companies.

© 2007, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.

Printed on recycled paper.

Microchip received ISO/TS-16949:2002 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona, Gresham, Oregon and Mountain View, California. The
Company’s quality system processes and procedures are for its PIC
MCUs and dsPIC® DSCs, KEELOQ
EEPROMs, microperipherals, nonvolatile memory and analog
products. In addition, Microchip’s quality system for the design and
manufacture of development systems is ISO 9001:2000 certified.

®

code hopping devices, Serial

© 2007 Microchip Technology Inc. DS22001C-page 31

®

WORLDWIDE SALES AND SERVICE

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12/08/06

DS22001C-page 32 © 2007 Microchip Technology Inc.