MICROCHIP MCP1702 Technical data

1
3
2
V
IN
GND V
OUT
MCP1702
1
2
3
V
IN
GND V
OUT
MCP1702
3-Pin SOT-23A
3-Pin SOT-89
V
IN
3-Pin TO-92
12
V
OUT
V
IN
GND
Bottom
View
3
查询MCP1702T-1202E/CB供应商
250 mA Low Quiescent Current LDO Regulator
MCP1702
Features
• 2.0 µA Quiescent Current (typical)
• Input Operating Voltage Range: 2.7V to 13.2V
• 250 mA Output Current for Output Voltages ≥ 2.5V
• 200 mA Output Current for Output Voltages < 2.5V
• Low Dropout (LDO) voltage
• 0.4% Typical Output Voltage Tolerance
• Standard Output Voltage Options:
• Output voltage range 1.2V to 5.5V in 0.1V
• Stable with 1.0 µF to 22 µF Output Capacitor
• Short-Circuit Protection
• Overtemperature Protection
Applications
• Battery-powered Devices
• Battery-powered Alarm Circuits
• Smoke Detectors
•CO
• Pagers and Cellular Phones
• Smart Battery Packs
• Low Quiescent Current Voltage Reference
•PDAs
• Digital Cameras
• Microcontroller Power
• Solar-Powered Instruments
• Consumer Products
• Battery Powered Data Loggers
Related Literature
• AN765, “Using Microchip’s Micropower LDOs”,
• AN766, “Pin-Compatible CMOS Upgrades to
• AN792, “A Method to Determine How Much
- 1.2V, 1.5V, 1.8V, 2.5V, 2.8V,
3.0V, 3.3V, 4.0V, 5.0V
Increments (50 mV increments available upon request)
2
Detectors
OUT
= 2.8V)
DS00765, Microchip Technology Inc., 2002
BiPolar LDOs”, DS00766, Microchip Technology Inc., 2002
Power a SOT-23 Can Dissipate in an Application”, DS00792, Microchip Technology Inc., 2001
Description
The MCP1702 is a family of CMOS low dropout (LDO) voltage regulators that can deliver up to 250 mA of current while consuming only 2.0 µA of quiescent current (typical). The input operating range is specified from 2.7V to 13.2V, making it an ideal choice for two to six primary cell battery-powered applications, 9V alkaline and one or two cell Li-Ion-powered applications.
The MCP1702 is capable of delivering 250 mA with only 625 mV (typical) of input to output voltage differential (V of the MCP1702 is typically ±0.4% at +25°C and ±3% maximum over the operating junction temperature range of -40°C to +125°C. Line regulation is ±0.1% typical at +25°C.
Output voltages available for the MCP1702 range from
1.2V to 5.0V. The LDO output is stable when using only 1 µF of output capacitance. Ceramic, tantalum or aluminum electrolytic capacitors can all be used for input and output. Overcurrent limit and overtemperature shutdown provide a robust solution for any application.
Package options include the SOT-23A, SOT-89-3, and TO-92.
= 2.8V). The output voltage tolerance
OUT
Package Types
© 2007 Microchip Technology Inc. DS22008B-page 1
MCP1702
+
-
MCP1702
V
IN
V
OUT
GND
+V
IN
Error Amplifier
Voltage
Reference
Overcurrent
Overtemperature
MCP1702
V
IN
C
IN
1µF Ceramic
C
OUT
1 µF Ceramic
V
OUT
V
IN
3.3V
I
OUT
50 mA
GND
V
OUT
9V Battery
+
Functional Block Diagrams
Typical Application Circuits
DS22008B-page 2 © 2007 Microchip Technology Inc.
MCP1702
1.0 ELECTRICAL CHARACTERISTICS
† Notice: Stresses above those listed under “Maximum Rat-
ings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the
Absolute Maximum Ratings †
VDD...............................................................................+14.5V
All inputs and outputs w.r.t. .............(V
-0.3V) to (VIN+0.3V)
SS
operational listings of this specification is not implied. Expo­sure to maximum rating conditions for extended periods may affect device reliability.
Peak Output Current ...................................................500 mA
Storage temperature .....................................-65°C to +150°C
Maximum Junction Temperature...................................150°C
Operating Junction Temperature...................-40°C to +125°C
ESD protection on all pins (HBM;MM)............... ≥ 4kV; ≥ 400V
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise specified, all limits are established for VIN = V
I
= 100 µA, C
LOAD
Boldface type applies for junction temperatures, T
= 1 µF (X7R), CIN = 1 µF (X7R), TA = +25°C.
OUT
of -40°C to +125°C. (Note 7)
J
OUT(MAX)
Parameters Sym Min Typ Max Units Conditions
Input / Output Characteristics
Input Operating Voltage V Input Quiescent Current I Maximum Output Current I
OUT_mA
IN
q
2.7 13.2 V Note 1 —2.0 5 µA IL = 0 mA
250 —— mAFor V
50 100 mA For V 100 130 mA For V 150 200 mA For V 200 250 mA For V
Output Short Circuit Current I
OUT_SC
Output Voltage Regulation V
Temperature Coefficient TCV
V
OUT
Line Regulation ΔV
(V
OUT
Load Regulation
Note 1: The minimum V
2: V
is the nominal regulator output voltage. For example: VR = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, or 5.0V.
R
The input voltage V
3: TCV
OUT
= (V
temperature range. V
ΔV
OUT/VOUT
must meet two conditions: VIN ≥ 2.7V and VIN V
IN
= V
IN
OUT-HIGH
- V
OUT-LOW
OUT
OUT
/
OUT
XΔVIN)
OUT(MAX)
OUT-LOW
= lowest voltage measured over the temperature range.
400 mA VIN = V
VR-3.0%
V
-2.0%
R
±0.4%VR+3.0%
V
R
V
+2.0%
R
V Note 2
—50150 ppm/°C Note 3
-0.3 ±0.1 +0.3 %/V (V
-2.5 ±1.0 +2.5 %IL = 1.0 mA to 250 mA for VR 2.5V
+ V
= highest voltage measured over the
+ V
DROPOUT(MAX)
or VIN = 2.7V (whichever is greater); I
) *106 / (VR * ΔTemperature), V
OUT(MAX)
OUT-HIGH
4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCV
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with an applied input voltage of V
OUT(MAX)
+ V
DROPOUT(MAX)
or 2.7V, whichever is greater.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., T dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
, TJ, θJA). Exceeding the maximum allowable power
A
junction temperatures above 150°C can impact the device reliability.
7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the ambient temperature is not significant.
+ V
DROPOUT(MAX)
2.5V
R
< 2.5V, VIN 2.7V
R
< 2.5V, VIN 2.95V
R
< 2.5V, VIN 3.2V
R
< 2.5V, VIN 3.45V
R
(Note 1), V
IN(MIN)
Current (average current) measured 10 ms after short is applied.
OUT(MAX)
V
I
= 1.0 mA to 200 mA for VR < 2.5V,
L
V
IN
DROPOUT(MAX)
+ V
13.2V, (Note 1)
IN
DROPOUT(MAX)
= 3.45V Note 4
.
= 100 µA.
OUT
.
OUT
, Note 1,
= GND,
OUT
)
© 2007 Microchip Technology Inc. DS22008B-page 3
MCP1702
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise specified, all limits are established for VIN = V
I
= 100 µA, C
LOAD
Boldface type applies for junction temperatures, T
= 1 µF (X7R), CIN = 1 µF (X7R), TA = +25°C.
OUT
of -40°C to +125°C. (Note 7)
J
OUT(MAX)
Parameters Sym Min Typ Max Units Conditions
Dropout Voltage
(Note 1, Note 5)
V
DROPOUT
330 650 mV IL = 250 mA, VR = 5.0V — 525 725 mV I — 625 975 mV I — 750 1100 mV I —— mV V
Output Delay Time T
Output Noise e Power Supply Ripple
PSRR 44 dB f = 100 Hz, C
DELAY
N
1000 µs VIN = 0V to 6V, V
—8 µV/(Hz)
1/2
Rejection Ratio
Thermal Shutdown Protection T
Note 1: The minimum V
2: V
is the nominal regulator output voltage. For example: VR = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, or 5.0V.
R
The input voltage V
3: TCV
= (V
OUT
temperature range. V
must meet two conditions: VIN ≥ 2.7V and VIN V
IN
= V
IN
OUT-HIGH
- V
OUT-LOW
SD
OUT(MAX) OUT-LOW
= lowest voltage measured over the temperature range.
150 °C
+ V
DROPOUT(MAX)
or VIN = 2.7V (whichever is greater); I
) *106 / (VR * ΔTemperature), V
OUT(MAX)
OUT-HIGH
+ V
= highest voltage measured over the
4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCV
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with an applied input voltage of V
OUT(MAX)
+ V
DROPOUT(MAX)
or 2.7V, whichever is greater.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., T dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
, TJ, θJA). Exceeding the maximum allowable power
A
junction temperatures above 150°C can impact the device reliability.
7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the ambient temperature is not significant.
+ V
DROPOUT(MAX)
= 250 mA, 3.3V ≤ VR < 5.0V
L
= 250 mA, 2.8V ≤ VR < 3.3V
L
= 250 mA, 2.5V ≤ VR < 2.8V
L
< 2.5V, See Maximum Output
R
Current Parameter
R
= 50Ω resistive
L
OUT
IL = 50 mA, f = 1 kHz, C
= 1 µF, IL = 50 mA,
V
INAC
V
=1.2V
R
DROPOUT(MAX)
OUT
= 100 mV pk-pk, CIN = 0 µF,
.
= 100 µA.
OUT
.
OUT
, Note 1,
= 90% VR
= 1 µF
OUT
TEMPERATURE SPECIFICATIONS (NOTE 1)
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Specified Temperature Range T Operating Temperature Range T Storage Temperature Range T
J
J
A
Thermal Package Resistance
Thermal Resistance, 3L-SOT-23A
Thermal Resistance, 3L-SOT-89
Thermal Resistance, 3L-TO-92 θ
θ
JA
θ
JC
θ
JA
θ
JC
JA
θ
JC
Note 1: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., T dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained junction temperatures above 150°C can impact the device reliability.
DS22008B-page 4 © 2007 Microchip Technology Inc.
-40 +125 °C
-40 +125 °C
-65 +150 °C
—336—°C/W
EIA/JEDEC JESD51-7 FR-4 0.063 4-Layer Board
—110—°C/W
—52—°C/W
EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board —10—°C/W — 131.9 °C/W — 66.3 °C/W
, TJ, θJA). Exceeding the maximum allowable power
A
MCP1702
0.00
1.00
2.00
3.00
4.00
5.00
2468101214
Input Voltage (V)
Quiescent Current (µA)
V
OUT
+25°C
+130°C
-45°C
0°C
+90°C
0.00
1.00
2.00
3.00
4.00
5.00
3 5 7 9 11 13
Input Voltage (V)
Quiescent Current (µA)
V
OUT
+25°C
+130°C
-45°C
0°C
+90°C
1.00
2.00
3.00
4.00
5.00
67891011121314
Input Voltage (V)
Quiescent Current (µA)
V
OUT
+25°C
+130°C
-45°C
0°C
+90°C
0.00
20.00
40.00
60.00
80.00
100.00
120.00
0 40 80 120 160 200
Load Current (mA)
GND Current (µA)
Temperature = +25°C
V
OUT
= 1.2V
V
IN
= 2.7V
0.00
20.00
40.00
60.00
80.00
100.00
120.00
0 50 100 150 200 250
Load Current (mA)
GND Current (µA)
Temperature = +25°C
V
OUT
= 5.0V
V
IN
= 6.0V
V
OUT
= 2.8V
V
IN
= 3.8V
0.00
0.50
1.00
1.50
2.00
2.50
3.00
-45-20 5 305580105130
Junction Temperature (°C)
Quiescent Current (µA)
I
OUT
V
OUT
= 5.0V
V
IN
= 6.0V
V
OUT
= 1.2V
V
IN
= 2.7V
V
OUT
= 2.8V
V
IN
= 3.8V
2.0 TYPICAL PERFORMANCE CURVES
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated: VR = 2.8V, C TA = +25°C, VIN = V
OUT(MAX)
+ V
DROPOUT(MAX)
= 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
OUT
.
Note: Junction Temperature (TJ) is approximated by soaking the device under test to an ambient temperature equal to the desired junction temperature. The test time is small enough such that the rise in Junction temperature over the Ambient temperature is not significant.
= 1.2V
FIGURE 2-1: Quiescent Current vs. Input Voltage.
= 2.8V
FIGURE 2-4: Ground Current vs. Load Current.
FIGURE 2-2: Quiescent Current vs.Input Voltage.
FIGURE 2-3: Quiescent Current vs.Input Voltage.
© 2007 Microchip Technology Inc. DS22008B-page 5
= 5.0V
FIGURE 2-5: Ground Current vs. Load Current.
= 0 mA
FIGURE 2-6: Quiescent Current vs. Junction Temperature.
MCP1702
1.18
1.19
1.20
1.21
1.22
1.23
1.24
2468101214
Input Voltage (V)
Output Voltage (V)
V
OUT
I
LOAD
+25°C
+130°C
-45°C
0°C
+90°C
2.77
2.78
2.79
2.80
2.81
2.82
2.83
2.84
2.85
3 4 5 6 7 8 9 1011121314
Input Voltage (V)
Output Voltage (V)
V
OUT
= 2.8V
I
LOAD
= 0.1 mA
+25°C
+130°C
-45°C
0°C
+90°C
4.96
4.98
5.00
5.02
5.04
5.06
6 7 8 9 10 11 12 13 14
Input Voltage (V)
Output Voltage (V)
V
OUT
= 5.0V
I
LOAD
= 0.1 mA
+25°C
+130°C
-45°C
0°C
+90°C
1.18
1.19
1.20
1.21
1.22
1.23
0 20406080100
Load Current (mA)
Output Voltage (V)
V
OUT
+25°C
+130°C
-45°C
0°C
+90°C
2.77
2.78
2.79
2.80
2.81
2.82
2.83
0 50 100 150 200 250
Load Current (mA)
Output Voltage (V)
V
OUT
+25°C
+130°C
-45°C
0°C
+90°C
4.96
4.97
4.98
4.99
5.00
5.01
5.02
5.03
5.04
0 50 100 150 200 250
Load Current (mA)
Output Voltage (V)
V
OUT
+25°C
+130°C
-45°C
0°C
+90°C
Note: Unless otherwise indicated: VR = 2.8V, C
TA = +25°C, VIN = V
OUT(MAX)
+ V
DROPOUT(MAX)
OUT
.
= 1.2V
= 0.1 mA
FIGURE 2-7: Output Voltage vs. Input Voltage.
= 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
= 1.2V
FIGURE 2-10: Output Voltage vs. Load Current.
= 2.8V
FIGURE 2-8: Output Voltage vs. Input Voltage.
FIGURE 2-9: Output Voltage vs. Input Voltage.
DS22008B-page 6 © 2007 Microchip Technology Inc.
FIGURE 2-11: Output Voltage vs. Load Current.
= 5.0V
FIGURE 2-12: Output Voltage vs. Load Current.
MCP1702
0.60
0.70
0.80
0.90
1.00
1.10
1.20
1.30
1.40
100 120 140 160 180 200
Load Current (mA)
Dropout Voltage (V)
V
OUT
= 1.8V
+25°C
+130°C
-45°C
0°C
+90°C
0.00
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
0 25 50 75 100 125 150 175 200 225 250
Load Current (mA)
Dropout Voltage (V)
V
OUT
= 2.8V
+25°C
+130°C
+0°C
-45°C
+90°C
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
0 25 50 75 100 125 150 175 200 225 250
Load Current (mA)
Dropout Voltage (V)
V
OUT
= 5.0V
+25°C
+130°C
+0°C
-45°C
+90°C
0.00
100.00
200.00
300.00
400.00
500.00
600.00
4 6 8 10 12 14
Input Voltage (V)
Short Circuit Current (mA)
V
OUT
= 2.8V
R
OUT
< 0.1
Note: Unless otherwise indicated: VR = 2.8V, C TA = +25°C, VIN = V
OUT(MAX)
+ V
DROPOUT(MAX)
OUT
.
FIGURE 2-13: Dropout Voltage vs. Load Current.
= 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
FIGURE 2-16: Dynamic Line Response.
FIGURE 2-14: Dropout Voltage vs. Load
Current.
FIGURE 2-15: Dropout Voltage vs. Load Current.
© 2007 Microchip Technology Inc. DS22008B-page 7
FIGURE 2-17: Dynamic Line Response.
FIGURE 2-18: Short Circuit Current vs.
Input Voltage.
MCP1702
-0.30
-0.25
-0.20
-0.15
-0.10
-0.05
0.00
0.05
0.10
0.15
0.20
-45-20 5 305580105130
Temperature (°C)
Load Regulation (%)
V
OUT
= 1.2V
I
LOAD
= 0.1 mA to 200 mA
VIN = 4V
VIN = 13.2V
VIN = 6V
VIN = 12VVIN = 10V
-0.60
-0.50
-0.40
-0.30
-0.20
-0.10
0.00
0.10
0.20
0.30
0.40
-45-20 5 305580105130
Temperature (°C)
Load Regulation (%)
V
OUT
I
LOAD
= 1 mA to 250 mA
VIN = 3.8V
VIN = 13.2V
VIN = 10V
VIN = 6V
-0.10
0.00
0.10
0.20
0.30
0.40
-45-20 5 305580105130
Temperature (°C)
Load Regulation (%)
V
OUT
I
LOAD
VIN = 6V
VIN = 13.2V
VIN = 8V
VIN = 10V
0.00
0.04
0.08
0.12
0.16
0.20
-45-20 5 305580105130
Temperature (°C)
Line Regulation (%/V)
V
OUT
V
IN
1 mA
100 mA
0 mA
0.00
0.04
0.08
0.12
0.16
0.20
-45-20 5 305580105130
Temperature (°C)
Line Regulation (%/V)
V
OUT
= 2.8V
V
IN
= 3.8V to 13.2V
200 mA
100 mA
0 mA
250 mA
0.06
0.08
0.10
0.12
0.14
0.16
-45-20 5 305580105130
Temperature (°C)
Line Regulation (%/V)
V
OUT
= 5.0V
V
IN
= 6.0V to 13.2V
200 mA
100 mA
0 mA
250 mA
Note: Unless otherwise indicated: VR = 2.8V, C
TA = +25°C, VIN = V
OUT(MAX)
+ V
DROPOUT(MAX)
FIGURE 2-19: Load Regulation vs.
Temperature.
= 2.8V
= 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
OUT
.
= 2.7V to 13.2V
FIGURE 2-22: Line Regulation vs.
Temperature.
= 1.2V
FIGURE 2-20: Load Regulation vs.
Temperature.
FIGURE 2-21: Load Regulation vs.
Temperature.
DS22008B-page 8 © 2007 Microchip Technology Inc.
= 1 mA to 250 mA
= 5.0V
FIGURE 2-23: Line Regulation vs.
Temperature.
FIGURE 2-24: Line Regulation vs. Temperature.
MCP1702
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
0.01 0.1 1 10 100 1000 Frequency (kHz)
PSRR (dB)
VR=1.2V C
OUT
=1.0 μF ceramic X7R
V
IN
=2.7V
C
IN
=0 μF
I
OUT
=1.0 mA
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
0.01 0.1 1 10 100 1000 Frequency (kHz)
PSRR (dB)
VR=5.0V C
OUT
=1.0 μF ceramic X7R
V
IN
=6.0V
C
IN
=0 μF
I
OUT
=1.0 mA
0.001
0.01
0.1
1
10
100
0.01 0.1 1 10 100 1000 Frequency (kHz)
Noise (μV/ ¥Hz)
VR=5.0V, VIN=6.0V
I
OUT
=50 mA
VR=2,8V, VIN=3.8V
VR=1.2V, VIN=2.7V
Note: Unless otherwise indicated: VR = 2.8V, C TA = +25°C, VIN = V
OUT(MAX)
+ V
DROPOUT(MAX)
FIGURE 2-25: Power Supply Ripple Rejection vs. Frequency.
= 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
OUT
.
FIGURE 2-28: Power Up Timing.
FIGURE 2-26: Power Supply Ripple
Rejection vs. Frequency.
FIGURE 2-27: Output Noise vs. Frequency.
© 2007 Microchip Technology Inc. DS22008B-page 9
FIGURE 2-29: Dynamic Load Response.
FIGURE 2-30: Dynamic Load Response.
MCP1702
3.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1: PIN FUNCTION TABLE
Pin No.
SOT-23A
1 1 1 GND Ground Terminal 233V 32, Tab2 V – NC No connection
Pin No. SOT-89
Pin No.
TO-92
Symbol Function
OUT
IN
Regulated Voltage Output Unregulated Supply Voltage
3.1 Ground Terminal (GND)
Regulator ground. Tie GND to the negative side of the output and the negative side of the input capacitor. Only the LDO bias current (2.0 µA typical) flows out of this pin; there is no high current. The LDO output regulation is referenced to this pin. Minimize voltage drops between this pin and the negative side of the load.
3.2 Regulated Output Voltage (V
Connect V positive terminal of the output capacitor. The positive side of the output capacitor should be physically located as close to the LDO V The current flowing out of this pin is equal to the DC load current.
to the positive side of the load and the
OUT
pin as is practical.
OUT
OUT
)
3.3 Unregulated Input Voltage Pin )
(V
IN
Connect VIN to the input unregulated source voltage. Like all LDO linear regulators, low source impedance is necessary for the stable operation of the LDO. The amount of capacitance required to ensure low source impedance will depend on the proximity of the input source capacitors or battery type. For most applications, 1 µF of capacitance will ensure stable operation of the LDO circuit. For applications that have load currents below 100 mA, the input capacitance requirement can be lowered. The type of capacitor used can be ceramic, tantalum or aluminum electrolytic. The low ESR characteristics of the ceramic will yield better noise and PSRR performance at high­frequency.
DS22008B-page 10 © 2007 Microchip Technology Inc.
4.0 DETAILED DESCRIPTION
+
-
MCP1702
V
IN
V
OUT
GND
+V
IN
Error Amplifier
Voltage Reference
Overcurrent Overtemperature
MCP1702
4.1 Output Regulation
A portion of the LDO output voltage is fed back to the internal error amplifier and compared with the precision internal bandgap reference. The error amplifier output will adjust the amount of current that flows through the P-Channel pass transistor, thus regulating the output voltage to the desired value. Any changes in input voltage or output current will cause the error amplifier to respond and adjust the output voltage to the target voltage (refer to Figure 4-1).
4.2 Overcurrent
The MCP1702 internal circuitry monitors the amount of current flowing through the P-Channel pass transistor. In the event of a short-circuit or excessive output current, the MCP1702 will turn off the P-Channel device for a short period, after which the LDO will attempt to restart. If the excessive current remains, the cycle will repeat itself.
4.3 Overtemperature
The internal power dissipation within the LDO is a function of input-to-output voltage differential and load current. If the power dissipation within the LDO is excessive, the internal junction temperature will rise above the typical shutdown threshold of 150°C. At that point, the LDO will shut down and begin to cool to the typical turn-on junction temperature of 130°C. If the power dissipation is low enough, the device will continue to cool and operate normally. If the power dissipation remains high, the thermal shutdown protection circuitry will again turn off the LDO, protecting it from catastrophic failure.
FIGURE 4-1: Block Diagram.
© 2007 Microchip Technology Inc. DS22008B-page 11
MCP1702
5.0 FUNCTIONAL DESCRIPTION
The MCP1702 CMOS LDO linear regulator is intended for applications that need the lowest current consump­tion while maintaining output voltage regulation. The operating continuous load range of the MCP1702 is from 0mA to 250mA (V voltage range is from 2.7V to 13.2V, making it capable of operating from two or more alkaline cells or single and multiple Li-Ion cell batteries.
5.1 Input
The input of the MCP1702 is connected to the source of the P-Channel PMOS pass transistor. As with all LDO circuits, a relatively low source impedance (10Ω) is needed to prevent the input impedance from causing the LDO to become unstable. The size and type of the capacitor needed depends heavily on the input source type (battery, power supply) and the output current range of the application. For most applications (up to 100 mA), a 1 µF ceramic capacitor will be sufficient to ensure circuit stability. Larger values can be used to improve circuit AC performance.
2.5V). The input operating
R
5.2 Output
The maximum rated continuous output current for the MCP1702 is 250 mA (V where VR < 2.5V, the maximum output current is 200 mA.
A minimum output capacitance of 1.0 µF is required for small signal stability in applications that have up to 250 mA output current capability. The capacitor type can be ceramic, tantalum or aluminum electrolytic. The esr range on the output capacitor can range from 0Ω to
2.0Ω.
2.5V). For applications
R
5.3 Output Rise time
When powering up the internal reference output, the typical output rise time of 500 µs is controlled to prevent overshoot of the output voltage. There is also a startup delay time that ranges from 300 µs to 800 µs based on loading. The startup time is separate from and precedes the Output Rise Time. The total output delay is the Startup Delay plus the Output Rise time.
DS22008B-page 12 © 2007 Microchip Technology Inc.
MCP1702
MCP1702
GND
V
OUT
V
IN
C
IN
1µF Ceramic
C
OUT
1µF Ceramic
V
OUT
V
IN
(2.8V to 3.2V)
1.8V
I
OUT
150 mA
P
LDO
V
IN MAX)()VOUT MIN()
()I
OUT MAX )()
×=
Where:
P
LDO
= LDO Pass device internal
power dissipation
V
IN(MAX)
= Maximum input voltage
V
OUT(MIN)
= LDO minimum output voltage
T
JMAX()PTOTAL
RθJA× T
AMAX
+=
Where:
T
J(MAX)
= Maximum continuous junction
temperature
P
TOTAL
= Total device power dissipation
Rθ
JA
Thermal resistance from junction to ambient
T
AMAX
= Maximum ambient temperature
P
DMAX()
T
JMAX()TAMAX()
()
Rθ
JA
---------------------------------------------------=
Where:
P
D(MAX)
= Maximum device power
dissipation
T
J(MAX)
= Maximum continuous junction
temperature
T
A(MAX)
Maximum ambient temperature
RθJA= Thermal resistance from
junction to ambient
T
JRISE()PDMAX()RθJA
×=
Where:
T
J(RISE)
= Rise in device junction
temperature over the ambient temperature
P
TOTAL
= Maximum device power
dissipation
Rθ
JA
Thermal resistance from junction to ambient
TJT
JRISE()TA
+=
Where:
T
J
= Junction Temperature
T
J(RISE)
= Rise in device junction
temperature over the ambient temperature
T
A
Ambient temperature
6.0 APPLICATION CIRCUITS AND ISSUES
6.1 Typical Application
The MCP1702 is most commonly used as a voltage regulator. It’s low quiescent current and low dropout voltage makes it ideal for many battery-powered applications.
FIGURE 6-1: Typical Application Circuit.
6.1.1 APPLICATION INPUT CONDITIONS
Package Type = SOT-23A
Input Voltage Range = 2.8V to 3.2V
V
maximum = 3.2V
IN
V
typical = 1.8V
OUT
I
= 150 mA maximum
OUT
EQUATION 6-2:
The maximum power dissipation capability for a package can be calculated given the junction-to­ambient thermal resistance and the maximum ambient temperature for the application. The following equation can be used to determine the package maximum internal power dissipation.
EQUATION 6-3:
6.2 Power Calculations
6.2.1 POWER DISSIPATION
The internal power dissipation of the MCP1702 is a function of input voltage, output voltage and output current. The power dissipation, as a result of the quiescent current draw, is so low, it is insignificant (2.0 µA x V calculate the internal power dissipation of the LDO.
EQUATION 6-1:
The maximum continuous operating junction temperature specified for the MCP1702 is +125 estimate the internal junction temperature of the MCP1702, the total internal power dissipation is multiplied by the thermal resistance from junction to ambient (Rθ ambient for the SOT-23A pin package is estimated at
°C/W.
336
© 2007 Microchip Technology Inc. DS22008B-page 13
). The following equation can be used to
IN
). The thermal resistance from junction to
JA
EQUATION 6-4:
EQUATION 6-5:
°C. To
MCP1702
PIC
®
MCP1702
GND
V
IN
C
IN
1µF
C
OUT
1µF
Bridge Sensor
V
OUT
V
REF
ADO AD1
Ratio Metric Reference
2 µA Bias
Microcontroller
6.3 Voltage Regulator
Internal power dissipation, junction temperature rise, junction temperature and maximum power dissipation are calculated in the following example. The power dissipation, as a result of ground current, is small
Junction Temperature Estimate
To estimate the internal junction temperature, the calculated temperature rise is added to the ambient or offset temperature. For this example, the worst-case junction temperature is estimated below.
enough to be neglected.
T
6.3.1 POWER DISSIPATION EXAMPLE
Package
Package
Input Voltage
LDO Output Voltages and Currents
V
Maximum Ambient Temperature
T
A(MAX)
Internal Power Dissipation
Internal Power dissipation is the product of the LDO output current times the voltage across the LDO (VIN to V
OUT
P
LDO(MAX)
P P
=SOT-23A
Type
V
= 2.8V to 3.2V
IN
=1.8V
OUT
I
=150mA
OUT
= +40°C
).
=(V
I
OUT(MAX)
= (3.2V - (0.97 x 1.8V)) x 150 mA
LDO
= 218.1 milli-Watts
LDO
IN(MAX)
- V
OUT(MIN)
) x
=T
J
TJ=113.3°C
Maximum Package Power Dissipation at +40°C Ambient Temperature
SOT-23 (336.0°C/Watt = RθJA)
P
D(MAX)
P
D(MAX)
= (125°C - 40°C) / 336°C/W = 253 milli-Watts
SOT-89 (52°C/Watt = RθJA)
P
D(MAX)
P
D(MAX)
= (125°C - 40°C) / 52°C/W = 1.635 Watts
TO92 (131.9°C/Watt = RθJA)
P
D(MAX)
P
D(MAX)
= (125°C - 40°C) / 131.9°C/W = 644 milli-Watts
6.4 Voltage Reference
The MCP1702 can be used not only as a regulator, but also as a low quiescent current voltage reference. In many microcontroller applications, the initial accuracy of the reference can be calibrated using production test equipment or by using a ratio measurement. When the
JRISE
+ T
A(MAX)
initial accuracy is calibrated, the thermal stability and
Device Junction Temperature Rise
line regulation tolerance are the only errors introduced by the MCP1702 LDO. The low-cost, low quiescent
The internal junction temperature rise is a function of internal power dissipation and the thermal resistance from junction to ambient for the application. The thermal resistance from junction to ambient (Rθ
) is derived
JA
current and small ceramic output capacitor are all advantages when using the MCP1702 as a voltage reference.
from an EIA/JEDEC standard for measuring thermal resistance for small surface mount packages. The EIA/ JEDEC specification is JESD51-7, “High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages”. The standard describes the test method and board specifications for measuring the thermal resistance from junction to ambient. The actual thermal resistance for a particular application can vary depending on many factors, such as copper area and thickness. Refer to AN792, “A Method to Determine
How Much Power a SOT-23 Can Dissipate in an Application”, (DS00792), for more information regarding
this subject.
T
J(RISE)
T T
DS22008B-page 14 © 2007 Microchip Technology Inc.
=P = 218.1 milli-Watts x 336.0°C/Watt
JRISE
= 73.3°C
JRISE
x Rq
TOTAL
JA
FIGURE 6-2: Using the MCP1702 as a voltage reference.
6.5 Pulsed Load Applications
For some applications, there are pulsed load current events that may exceed the specified 250 mA maximum specification of the MCP1702. The internal current limit of the MCP1702 will prevent high peak load demands from causing non-recoverable damage. The 250 mA rating is a maximum average continuous rating. As long as the average current does not exceed 250 mA, pulsed higher load currents can be applied to the MCP1702 MCP1702 is 500 mA (T
. The typical current limit for the
+25°C).
A
MCP1702
© 2007 Microchip Technology Inc. DS22008B-page 15
MCP1702
3-Pin SOT-23A
XXNN
Standard
Extended Temp
Symbol Voltage * Symbol Voltage *
HA 1.2 HF 3.0 HB 1.5 HG 3.3 HC 1.8 HH 4.0 HD 2.5 HJ 5.0 HE 2.8
* Custom output voltages available upon request. Contact your local Microchip sales office for more information.
Example:
HANN
Legend: XX...X Customer-specific information
Y Year code (last digit of calendar year) YY Year code (last 2 digits of calendar year) WW Week code (week of January 1 is week ‘01’) NNN Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) * This package is Pb-free. The Pb-free JEDEC designator ( )
can be found on the outer packaging for this package.
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available characters for customer-specific information.
Standard
Extended Temp
Symbol Voltage * Symbol Voltage *
HA 1.2 HF 3.0 HB 1.5 HG 3.3 HC 1.8 HH 4.0 HD 2.5 HJ 5.0 HE 2.8
* Custom output voltages available upon request. Contact your local Microchip sales office for more information.
3-Lead SOT-89
XXXYYWW
NNN
Example
HA0619
256
3-Lead TO-92
XXXXXX XXXXXX XXXXXX
YWWNNN
Example
1702 1202E
TO^^ 619256
7.0 PACKAGING INFORMATION
7.1 Package Marking Information
3
e
3
e
DS22008B-page 16 © 2007 Microchip Technology Inc.
3
e
3-Lead Plastic Small Outline Transistor (CB) [SOT-23A]
Notes:
1. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.127 mm per side.
2. Dimensioning and tolerancing per ASME Y14.5M. BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Units MILLIMETERS
Dimension Limits MIN NOM M AX Number of Pins N 3 Lead Pitch e 0.95 BSC Outside Lead Pitch e1 1.90 BSC Overall Height A 0.89 1.45 Molded Package Thickness A2 0.90 1 .30 Standoff A1 0.00 0.15 Overall Width E 2.10 3.00 Molded Package Width E1 1.20 1 .80 Overall Length D 2.70 3.10 Foot Length L 0.15 0.60 Foot Angle φ 30° Lead Thickness c 0.09 0.26 Lead Width b 0.30 0.51
D
e
e1
2
1
E
E1
N
b
A
A1
A2
c
L
φ
Microchip Technology Drawing C04-130B
MCP1702
© 2007 Microchip Technology Inc. DS22008B-page 17
MCP1702
3-Lead Plastic Small Outline Transistor Header (MB) [SOT-89]
Notes:
1. Dimensions D and E do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.127 mm per side.
2. Dimensioning and tolerancing per ASME Y14.5M. BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Units MILLIMETERS
Dimension Limits MIN MAX Number of Leads N 3 Pitch e 1.50 BSC Outside Lead Pitch e1 3.00 BSC Overall Height A 1.40 1.60 Overall Width H 3.94 4.25 Molded Package Width at Base E 2.29 2.60 Molded Package Width at Top E1 2.13 2.29 Overall Length D 4.39 4.60 Tab Length D1 1.40 1.83 Foot Length L 0.79 1.20 Lead Thickness c 0.35 0.44 Lead 2 Width b 0.41 0.56 Leads 1 & 3 Width b1 0.36 0.48
D
D1
E
H
N
b1
e1
b
21
e
b1
L
A
C
E1
Microchip Technology Drawing C04-029B
DS22008B-page 18 © 2007 Microchip Technology Inc.
3-Lead Plastic Transistor Outline (TO) [TO-92]
Notes:
1. Dimensions A and E do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .005" per side.
2. Dimensioning and tolerancing per ASME Y14.5M. BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Units INCHES
Dimension Limits MIN MAX Number of Pins N 3 Pitch e .050 BSC Bottom to Package Flat D .125 .165 Overall Width E .175 .205 Overall Length A .170 .210 Molded Package Radius R .080 .105 Tip to Seating Plane L .500 – Lead Thickness c .014 .021 Lead Width b .014 .022
E
A
N
1
L
b
e
c
R
D
1
2
3
Microchip Technology Drawing C04-101B
MCP1702
© 2007 Microchip Technology Inc. DS22008B-page 19
MCP1702
NOTES:
DS22008B-page 20 © 2007 Microchip Technology Inc.
APPENDIX A: REVISION HISTORY
Revision B (May 2007)
• All Pages: Corrected minor errors in document.
• Page 4: Added junction-to-case information to Temperature Specifications table.
• Page 16: Updated Package Outline Drawings in Section 7.0 “Packaging Information”.
• Page 21: Updated Revison History.
• Page 23: Corrected examples in ”Product Identi-
fication System”.
Revision A (September 2006)
• Original Release of this Document.
MCP1702
© 2007 Microchip Technology Inc. DS22008B-page 21
MCP1702
NOTES:
DS22008B-page 22 © 2007 Microchip Technology Inc.
PRODUCT IDENTIFICATION SYSTEM
Device: MCP1702: 2 µA Low Dropout Positive Voltage Regulator
Tape and Reel: T = Tape and Reel
Output Voltage *: 12 = 1.2V “Standard”
15 = 1.5V “Standard” 18 = 1.8V “Standard” 25 = 2.5V “Standard” 28 = 2.8V “Standard” 30 = 3.0V “Standard” 33 = 3.3V “Standard” 40 = 4.0V “Standard” 50 = 5.0V “Standard” *Contact factory for other output voltage options.
Extra Feature Code: 0 = Fixed
Tolerance: 2 = 2.0% (Standard)
Temperature: E = -40°C to +125°C
Package Type: CB = 3-Pin SOT-23A (equivalent to EIAJ SC-59)
MB = 3-Pin SOT-89 TO = 3-Pin TO-92
PART NO. XXX
Output Feature
Code
Device
Vol tag e
X
Tol era nceX/Tem p.XXPackage
X-
Tap e
and Reel
Examples:
a) MCP1702T-1202E/CB: 1.2V LDO Positive
Voltage Regulator, SOT-23A-3 pkg.
b) MCP1702T-1802E/MB: 1.8V LDO Positive
Voltage Regulator, SOT-89-3 pkg.
c) MCP1702T-2502E/CB: 2.5V LDO Positive
Voltage Regulator, SOT-23A-3 pkg.
d) MCP1702T-3002E/CB: 3.0V LDO Positive
Voltage Regulator, SOT-23A-3 pkg.
e) MCP1702T-3002E/MB: 3.0V LDO Positive
Voltage Regulator, SOT-89-3 pkg.
f) MCP1702T-3302E/CB: 3.3V LDO Positive
Voltage Regulator, SOT-23A-3 pkg.
g) MCP1702T-3302E/MB: 3.3V LDO Positive
Voltage Regulator, SOT-89-3 pkg.
h) MCP1702T-4002E/CB: 4.0V LDO Positive
Voltage Regulator, SOT-23A-3 pkg.
i) MCP1702-5002E/TO: 5.0V LDO Positive
Voltage Regulator, TO-92 pkg.
j) MCP1702T-5002E/CB: 5.0V LDO Positive
Voltage Regulator, SOT-23A-3 pkg.
k) MCP1702T-5002E/MB: 5.0V LDO Positive
Voltage Regulator, SOT-89-3 pkg.
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
MCP1702
© 2007 Microchip Technology Inc. DS22008B-page 23
MCP1702
NOTES:
DS22008B-page 24 © 2007 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
Microchip products meet the specification contained in their particular Microchip Data Sheet.
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions.
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, Accuron, dsPIC, K
EELOQ, KEELOQ logo, microID, MPLAB, PIC,
PICmicro, PICSTART, PRO MATE, PowerSmart, rfPIC, and SmartShunt are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries.
AmpLab, FilterLab, Linear Active Thermistor, Migratable Memory, MXDEV, MXLAB, PS logo, SEEVAL, SmartSensor and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, Mindi, MiWi, MPASM, MPLAB Certified logo, MPLIB, MPLINK, PICkit, PICDEM, PICDEM.net, PICLAB, PICtail, PowerCal, PowerInfo, PowerMate, PowerTool, REAL ICE, rfLAB, rfPICDEM, Select Mode, Smart Serial, SmartTel, Total Endurance, UNI/O, WiperLock and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated in the U.S.A.
All other trademarks mentioned herein are property of their respective companies.
© 2007, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received ISO/TS-16949:2002 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona, Gresham, Oregon and Mountain View, California. The Company’s quality system processes and procedures are for its PIC MCUs and dsPIC® DSCs, KEELOQ EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified.
®
code hopping devices, Serial
© 2007 Microchip Technology Inc. DS22008B-page 25
®
WORLDWIDE SALES AND SERVICE
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Italy - Milan
Tel: 39-0331-742611 Fax: 39-0331-466781
Netherlands - Drunen
Tel: 31-416-690399 Fax: 31-416-690340
Spain - Madrid
Tel: 34-91-708-08-90 Fax: 34-91-708-08-91
UK - Wokingham
Tel: 44-118-921-5869 Fax: 44-118-921-5820
12/08/06
DS22008B-page 26 © 2007 Microchip Technology Inc.
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