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MCP14E3
Technical data
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MICROCHIP MCP14E3, MCP14E4, MCP14E5 Technical data

MCP14E3/MCP14E4/MCP14E5
ENB_A
IN A
GND
IN B
8-Pin
1
2
3
4
ENB_B
5
6
7
8
OUT A
OUT B
ENB_A
IN A
GND
IN B
V
DD
Note 1: Exposed pad of the DFN package is electrically isolated.
MCP14E3
MCP14E4
ENB_B
OUT A
OUT B
V
DD
MCP14E5
ENB_B
OUT A
OUT B
V
DD
ENB_B
OUT A
OUT B
V
DD
MCP14E3
MCP14E4
ENB_B
OUT A
OUT B
V
DD
MCP14E5
ENB_B
OUT A
OUT B
V
DD
PDIP/SOIC
8-Pin
6x5 DFN
(1)
1
2
3
4
5
6
7
8
4.0A Dual High-Speed Power MOSFET Drivers With Enable
Features
• High Peak Output Current: 4.0A (typical)
• Independent Enable Function for Each Driver Output
• Low Shoot-Through/Cross-Conduction Current in Output Stage
- 4.5V to 18V
• High Capacitive Load Drive Capability:
- 2200 pF in 15 ns (typical)
- 5600 pF in 26 ns (typical)
• Short Delay Times: 50 ns (typical)
• Latch-Up Protected: Will Withstand 1.5A Reverse Current
• Logic Input Will Withstand Negative Swing Up To 5V
• Space-Saving Packages:
- 8-Lead 6x5 DFN, PDIP, SOIC
Applications
• Switch Mode Power Supplies
• Pulse Transformer Drive
• Line Drivers
• Motor and Solenoid Drive
General Description
The MCP14E3/MCP14E4/MCP14E5 devices are a family of 4.0A buffers/MOSFET drivers. Dual-inverting, dual-noninvertering, and complementary outputs are standard logic options offered.
The MCP14E3/MCP14E4/MCP14E5 drivers are capable of operating from a 4.5V to 18V single power supply and can easily charge and discharge 2200 pF gate capacitance in under 15 ns (typical). They provide low impedance in both the ON and OFF states to ensure the MOSFET’s intended state will not be affected, even by large transients. The MCP14E3/ MCP14E4/MCP14E5 inputs may be driven directly from either TTL or CMOS (2.4V to 18V).
Additional control of the MCP14E3/MCP14E4/ MCP14E5 outputs is allowed by the use of separate enable functions. The ENB_A and ENB_B pins are active high and are internally pulled up to V maybe left floating for standard operation.
The MCP14E3/MCP14E4/MCP14E5 dual-output 4.0A driver family is offered in both surface-mount and pin­through-hole packages with a -40°C to +125°C temperature rating. The low thermal resistance of the thermally enhanced DFN package allows for greater power dissipation capability for driving heavier capacitive or resistive loads.
These devices are highly latch-up resistant under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking (of either polarity) occurs on the ground pin. They can accept, without damage or logic upset, up to
1.5A of reverse current being forced back into their outputs. All terminals are fully protect against Electrostatic Discharge (ESD) up to 4 kV.
. The pins
DD
Package Types
© 2007 Microchip Technology Inc. DS22062A-page 1
MCP14E3/MCP14E4/MCP14E5
Effective
Input C = 20 pF
(Each Input)
MCP14E3 MCP14E4 MCP14E5
Dual Inverting Dual Noninverting
One Inverting, One Noninverting
Output
Input
GND
V
DD
4.7 V
Inverting
Non-inverting
Enable
V
DD
Internal Pull-up
4.7 V
Functional Block Diagram
DS22062A-page 2 © 2007 Microchip Technology Inc.
MCP14E3/MCP14E4/MCP14E5
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage................................................................+20V
Input Voltage...............................(V
Enable Voltage.............................(V
Input Current (V Package Power Dissipation (T
8L-DFN ....................................................................... Note 3
8L-PDIP ........................................................................1.10W
8L-SOIC ..................................................................... 665 mW
)................................................50 mA
IN>VDD
+ 0.3V) to (GND – 5V)
DD
+ 0.3V) to (GND - 5V)
DD
= 50°C)
A
† Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability.
DC CHARACTERISTICS (NOTE 2)
Electrical Specifications: Unless otherwise indicated, TA = +25°C, with 4.5V ≤ VDD ≤ 18V.
Parameters Sym Min Typ Max Units Conditions
Input
Logic ‘1’, High Input Voltage V
Logic ‘0’, Low Input Voltage V
Input Current I
Input Voltage V
IH
IL
IN
IN
Output
High Output Voltage V
Low Output Voltage V
Output Resistance, High R
Output Resistance, Low R
Peak Output Current I
Latch-Up Protection With-
I
REV
OH
OL
OH
OL
PK
stand Reverse Current
Switching Time (Note 1)
Rise Time t
Fall Time t
Propagation Delay Time t
Propagation Delay Time t
R
F
D1
D2
Enable Function (ENB_A, ENB_B)
High-Level Input Voltage V
Low-Level Input Voltage V
Hysteresis V
Enable Leakage Current I
Propagation Delay Time t
Propagation Delay Time t
EN_H
EN_L
HYST
ENBL
D3
D4
Note 1: Switching times ensured by design.
2: Tested during characterization, not production tested. 3: Package power dissipation is dependent on the copper pad area on the PCB.
2.4 1.5 — V
—1.30.8V
–1 — 1 µA 0V ≤ VIN ≤ V
-5 — VDD+0.3 V
VDD – 0.025 — — V DC Test
— — 0.025 V DC Test
—2.53.5Ω I
—2.53.0Ω I
—4.0—AV
OUT
OUT
DD
— >1.5 — A Duty cycle ≤ 2%, t ≤ 300 µs
—1530nsFigure 4-1, Figure 4-2
= 2200 pF
C
L
—1830nsFigure 4-1, Figure 4-2
CL = 2200 pF
—4655nsFigure 4-1, Figure 4-2
—5055nsFigure 4-1, Figure 4-2
1.60 1.90 2.90 V VDD= 12V, LO to HI Transition
1.30 2.20 2.40 V VDD= 12V, HI to LO Transition
0.10 0.30 0.60 V
40 85 115 µA VDD=12V,
ENB_A = ENB_B = GND
—60—nsFigure 4-3 (Note 1)
—50—nsFigure 4-3 (Note 1)
DD
= 10 mA, VDD = 18V
= 10 mA, VDD = 18V
= 18V (Note 2)
© 2007 Microchip Technology Inc. DS22062A-page 3
MCP14E3/MCP14E4/MCP14E5
DC CHARACTERISTICS (NOTE 2) (CONTINUED)
Electrical Specifications: Unless otherwise indicated, TA = +25°C, with 4.5V ≤ VDD ≤ 18V.
Parameters Sym Min Typ Max Units Conditions
Power Supply
Supply Voltage V
Supply Current I
DD
DD
I
DD
I
DD
I
DD
I
DD
I
DD
I
DD
I
DD
Note 1: Switching times ensured by design.
2: Tested during characterization, not production tested. 3: Package power dissipation is dependent on the copper pad area on the PCB.
4.5 — 18.0 V
—1.602.00mAV
IN_A
ENB_A = ENB_B = High
—0.600.90mAV
IN_A
ENB_A = ENB_B = High
—1.201.40mAV
IN_A
ENB_A = ENB_B = High
—1.201.40mAV
IN_A
ENB_A = ENB_B = High
—1.401.80mAV
IN_A
ENB_A = ENB_B = Low
—0.550.75mAV
IN_A
ENB_A = ENB_B = Low
—1.001.20mAV
IN_A
ENB_A = ENB_B = Low
—1.001.20mAV
IN_A
ENB_A = ENB_B = Low
=3V, V
=0V, V
=3V, V
=0V, V
=3V, V
=0V, V
=3V, V
=0V, V
IN_B
IN_B
IN_B
IN_B
IN_B
IN_B
IN_B
IN_B
=3V,
=0V,
=0V,
=3V,
=3V,
=0V,
=0V,
=3V,
DS22062A-page 4 © 2007 Microchip Technology Inc.
MCP14E3/MCP14E4/MCP14E5
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
Electrical Specifications: Unless otherwise indicated, operating temperature range with 4.5V ≤ VDD ≤ 18V.
Parameters Sym Min Typ Max Units Conditions
Input
Logic ‘1’, High Input Voltage V
Logic ‘0’, Low Input Voltage V
Input Current I
IH
IL
IN
Output
High Output Voltage V
Low Output Voltage V
Output Resistance, High R
Output Resistance, Low R
OHVDD
OL
OH
OL
Switching Time (Note 1)
Rise Time t
Fall Time t
Delay Time t
Delay Time t
R
F
D1
D2
Enable Function (ENB_A, ENB_B)
High-Level Input Voltage V
Low-Level Input Voltage V
Hysteresis V
Enable Leakage Current I
Propagation Delay Time t
Propagation Delay Time t
EN_H
EN_L
HYST
ENBL
D3
D4
Power Supply
Supply Voltage V
Supply Current I
DD
DD
I
DD
I
DD
I
DD
I
DD
I
DD
I
DD
I
DD
Note 1: Switching times ensured by design.
2.4 — — V
——0.8V
–10 — +10 µA 0V ≤ VIN ≤ V
DD
– 0.025 — — V DC TEST
— — 0.025 V DC TEST
—3.06.0Ω I
—3.05.0Ω I
= 10 mA, VDD = 18V
OUT
= 10 mA, VDD = 18V
OUT
—2540nsFigure 4-1, Figure 4-2
CL = 2200 pF
—2840nsFigure 4-1, Figure 4-2
CL = 2200 pF
—5070nsFigure 4-1, Figure 4-2
—5070nsFigure 4-1, Figure 4-2
1.60 2.20 2.90 V VDD= 12V, LO to HI Transition
1.30 1.80 2.40 V VDD= 12V, HI to LO Transition
—0.40—V
40 87 115 µA VDD= 12V, ENB_A = ENB_B = GND
—50—nsFigure 4-3
—60—nsFigure 4-3
4.5 — 18.0 V
—2.03.0mAV
IN_A
=3V, V
IN_B
=3V,
ENB_A = ENB_B = High
—0.81.1mAV
IN_A
=0V, V
IN_B
=0V,
ENB_A = ENB_B = High
—1.52.0mAV
IN_A
=3V, V
IN_B
=0V,
ENB_A = ENB_B = High
—1.52.0mAV
IN_A
=0V, V
IN_B
=3V,
ENB_A = ENB_B = High
—1.82.8mAV
IN_A
=3V, V
IN_B
=3V,
ENB_A = ENB_B = Low
—0.60.8mAV
IN_A
=0V, V
IN_B
=0V,
ENB_A = ENB_B = Low
—1.11.8mAV
IN_A
=3V, V
IN_B
=0V,
ENB_A = ENB_B = Low
—1.11.8mAV
IN_A
=0V, V
IN_B
=3V,
ENB_A = ENB_B = Low
© 2007 Microchip Technology Inc. DS22062A-page 5
MCP14E3/MCP14E4/MCP14E5
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V ≤ VDD ≤ 18V.
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Specified Temperature Range T
Maximum Junction Temperature T
Storage Temperature Range T
Package Thermal Resistances
Thermal Resistance, 8L-6x5 DFN θ
Thermal Resistance, 8L-PDIP θ
Thermal Resistance, 8L-SOIC θ
A
A
JA
JA
JA
–40 — +125 °C
J
— — +150 °C
–65 — +150 °C
— 35.7 — °C/W Typical four-layer board with
vias to ground plane
—89.3 —°C/W
— 149.5 — °C/W
DS22062A-page 6 © 2007 Microchip Technology Inc.
MCP14E3/MCP14E4/MCP14E5
0
20
40
60
80
100
4 6 8 10 12 14 16 18
Supply Voltage (V)
Rise Time (ns)
10,000 pF
6,800 pF
4,700 pF
2,200 pF
100 pF
0
10
20
30
40
50
60
100 1000 10000
Capacitive Load (pF)
Rise Time (ns)
5V
12V
18V
10
12
14
16
18
20
22
24
-40 -25 -10 5 20 35 50 65 80 95 110 125
Temperature (°C)
Time (ns)
VDD = 18V
t
RISE
t
FALL
0
30
60
90
120
4 6 8 1012141618
Supply Voltage (V)
Fall Time (ns)
10,000 pF
6,800 pF
4,700 pF
2,200 pF
100 pF
0
10
20
30
40
50
60
100 1000 10000
Capacitive Load (pF)
Fall Time (ns)
5V
12V
18V
35
40
45
50
55
60
4 5 6 7 8 9 10 11 12
Input Amplitude (V)
Propagation Delay (ns)
VDD = 12V
t
D1
t
D2

2.0 TYPICAL PERFORMANCE CURVES

Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, TA = +25C with 4.5V ≤ VDD ≤ 18V.

FIGURE 2-1: Rise Time vs. Supply Voltage.

FIGURE 2-2: Rise Time vs. Capacitive Load.

FIGURE 2-4: Fall Time vs. Supply Voltage.

FIGURE 2-5: Fall Time vs. Capacitive Load.

FIGURE 2-3: Rise and Fall Times vs. Temperature.

© 2007 Microchip Technology Inc. DS22062A-page 7

FIGURE 2-6: Propagation Delay vs. Input Amplitude.

MCP14E3/MCP14E4/MCP14E5
20
40
60
80
100
120
140
4 6 8 10 12 14 16 18
Supply Voltage (V)
Propagation Delay (ns)
t
D1
t
D2
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
4 6 8 1012141618
Supply Voltage (V)
Quiescent Current (mA)
Input = 1
Input = 0
1
2
3
4
5
6
7
8
4 6 8 1012141618
Supply Voltage (V)
R
OUT-HI
(Ω)
TA = 125°C
TA = 25°C
VIN = 0V (MCP14E3) V
IN
= 5V (MCP14E4)
40
50
60
70
80
-40 -25 -10 5 20 35 50 65 80 95 110 125
Temperature (°C)
Propagatin Delay (ns)
t
D1
t
D2
VDD = 12V
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-40 -25 -10 5 20 35 50 65 80 95 110 125
Temperature (°C)
Quiescent Current (mA)
Input = 1
Input = 0
VDD = 18V
1
2
3
4
5
6
7
8
4 6 8 1012141618
Supply Voltage (V)
R
OUT-LO
(Ω)
TA = 125°C
TA = 25°C
VIN = 5V (MCP14E3) V
IN
= 0V (MCP14E4)
Typical Performance Curves (Continued)
Note: Unless otherwise indicated, TA = +25C with 4.5V ≤ VDD ≤ 18V.

FIGURE 2-7: Propagation Delay Time vs. Supply Voltage.

FIGURE 2-8: Quiescent Current vs. Supply Voltage.

FIGURE 2-10: Propagation Delay Time vs. Temperature.

FIGURE 2-11: Quiescent Current vs. Temperature.

FIGURE 2-9: Output Resistance (Output High) vs. Supply Voltage.

DS22062A-page 8 © 2007 Microchip Technology Inc.

FIGURE 2-12: Output Resistance (Output Low) vs. Supply Voltage.

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