MICROCHIP MCP111, MCP112 Technical data

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MCP111/112

Micropower Voltage Detector

Features

• Ultra-low supply current: 1.75 µA (max.)

Package Types

3-Pin SOT23-3/SC-70

3-Pin SOT-89

• Precision monitoring options of:
V

- 1.90V, 2.32V, 2.63V, 2.90V, 2.93V, 3.08V,

4.38V and 4.63V

• Resets microcontroller in a power-loss event

•Active-low V

OUT

pin:

- MCP111 active-low, open-drain

- MCP112 active-low, push-pull

V

OUT

V

SS

1

V

3

DD

2

MCP111/112

DD

MCP111/112

1 32

V

V

OUT

• Available in SOT23-3, TO-92, SC-70 and

SOT-89-3 packages

3-Pin TO-92

• Temperature Range:

- Extended: -40°C to +125°C
(except MCP1XX-195)

- Industrial: -40°C to +85°C (MCP1XX-195 only)

• Pb-free devices

V

OUT

V

V

SS

DD

Applications

• Critical Microcontroller and Microprocessor
Power-Monitoring Applicati ons

• Computers

• Intelligent Instruments

• Portable Battery-Powered Equipm en t

Description

The MCP111/112 are voltage-detecting devices
designed to keep a microcontroller in reset until the
system voltage has stabilized at the appropriate level
for reliable system operation. These devices also
operate as protection from brown-out conditions when
the system supply voltage drops below the specified
threshold voltage level. Eight different trip voltag es a re
available.

TABLE 1: DEVICE FEATURES

Device

Output

Type Pull-up Resistor

MCP111 Open-drain External No V
MCP112 Push-pull No No V
MCP102 Push-pull No 120 ms RST, VDD, VSS See MCP102/103/121/131 Data Sheet

MCP103 Push-pull No 120 ms VSS, RST, VDD See MCP102/103/121/131 Data Sheet

MCP121 Open-drain External 120 ms RST, VDD, VSS See MCP102/103/121/131 Data Sheet

MCP131 Open-Drain Internal (~95 kΩ) 120 ms RST, VDD, VSS See MCP102/103/121/131 Data Sheet

Reset Delay

(typ)

Block Diagram

Package Pin Out

(Pin # 1, 2, 3)

, VSS, V

OUT
OUT

, VSS, V

DD
DD

Band Gap
Reference

(DS21906)

(DS21906)

(DS21906)

(DS21906)

V

Comparator

+
–

V

DD

SS

Output

Driver

Comment

V

DD

OUT

V

SS

© 2005 Microchip Technology Inc. DS21889D-page 1

MCP111/112

1.0 ELECTRICAL
CHARACTERISTICS

† Notice: Stresses above those listed under “Maximum

Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the

Absolute Maximum Ratings†

operational listings of this specification is not implied.
Exposure to maximum rating conditions fo r ext ended pe riods

VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.0V

Input current (V
Output current (RST
Rated Rise Time of V
All inputs and outputs (except RST

) . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 mA

DD

) . . . . . . . . . . . . . . . . . . . . . . . . . .10 mA

. . . . . . . . . . . . . . . . . . . . . . 100V/µs

DD

) w.r.t. V

SS

may affect device reliability.

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0 . 6 V to (VDD + 1.0V)

output w.r.t. VSS . . . . . . . . . . . . . . . . . . . -0.6 V to 1 3 .5 V

RST

Storage temperature. . . . . . . . . . . . . . . . . . .65°C to + 150°C

Ambient temp. with power applied . . . . . . . -40°C to + 125°C

Maximum Junction temp. with power applied . . . . . . . .150°C

ESD protection on all pins. . . . . . . . . . . . . . . . . . . . . . . . . ≥ 2kV

DC CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 kΩ (only MCP111),

T

= -40°C to +125°C.

A

Parameters Sym Min Typ Max Units Conditions

Operating Voltage Range V
Specified V

Value to V

DD

low V

OUT

Operating Current I
V

Trip Point MCP1XX-195 V

DD

DD
DD

DD

TRIP

MCP1XX-240 2.285 2.320 2.355 V T

MCP1XX-270 2.591 2.630 2.670 V T

MCP1XX-290 2.857 2.900 2.944 V T

MCP1XX-300 2.886 2.930 2.974 V T

MCP1XX-315 3.034 3.080 3.126 V T

MCP1XX-450 4.314 4.380 4.446 V T

MCP1XX-475 4.561 4.630 4.700 V T

Trip Point Tempco T

V

DD

TPCO

Note 1: Trip point is ±1.5% from typical value.

2: Trip point is ±2.5% from typical value.
3: This specification allows this device to be used in PICmicro

Serial Programming™ (ICSP™) feature (see device-specific programming specifications for voltage requirements).
This specification DOES NOT allow a continuous high voltage to be present on the open-drain output pin (V
total time that the V
V

pin should be limited to 2 mA. It is recommended that the device operational temperature be maintained between

OUT

pin can be above the maximum device operational voltage (5.5V) is 100 sec. Current into the

OUT

0°C to 70°C (+25°C preferred). For additional information, please refer to Figure 2-28.

4: This parameter is established by characterization and is not 100% tested.

1.0 — 5.5 V

1.0 — V I

= 10 µA, V

RST

RST

—< 11.75µA

1.872 1.900 1.929 V TA = +25°C (Note 1)

1.853 1.900 1.948 V T

= -40°C to +85°C (Note 2)

A

= +25°C (Note 1)

A

2.262 2.320 2.378 V Note 2
= +25°C (Note 1)

A

2.564 2.630 2.696 V Note 2
= +25°C (Note 1)

A

2.828 2.900 2.973 V Note 2
= +25°C (Note 1)

A

2.857 2.930 3.003 V Note 2
= +25°C (Note 1)

A

3.003 3.080 3.157 V Note 2
= +25°C (Note 1)

A

4.271 4.380 4.490 V Note 2
= +25°C (Note 1)

A

4.514 4.630 4.746 V Note 2

— ±100 — ppm/°

C

®

microcontroller applications that require the In-Circuit

< 0.2V

). The

OUT

DS21889D-page 2 © 2005 Microchip Technology Inc.

MCP111/112

DC CHARACTERISTICS (CONTINUED)

Electrical Specifications: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 kΩ (only MCP111),

= -40°C to +125°C.

T

A

Parameters Sym Min Typ Max Units Conditions

Threshold Hysteresis
(min. = 1%, max = 6%)

Low-level Output Voltage V

V

OUT

V

High-level Output Voltage V

OUT

Open-drain High Voltage on Output V

Open-drain Output Leakage Current
(MCP111 only)

Note 1: Trip point is ±1.5% from typical value.

2: Trip point is ±2.5% from typical value.
3: This specification allows this device to be used in PICmicro

Serial Programming™ (ICSP™) feature (see device-specific programming specifications for voltage requirements).
This specification DOES NOT allow a continuous high voltage to be present on the open-drain output pin (V
total time that the V
V

pin should be limited to 2 mA. It is recommended that the device operational temperature be maintained between

OUT

0°C to 70°C (+25°C preferred). For additional information, please refer to Figure 2-28.

4: This parameter is established by characterization and is not 100% tested.

MCP1XX-195 V

HYS

0.019 — 0.114 V TA = +25°C

MCP1XX-240 0.023 — 0.139 V
MCP1XX-270 0.026 — 0.158 V
MCP1XX-290 0.029 — 0.174 V
MCP1XX-300 0.029 — 0.176 V
MCP1XX-315 0.031 — 0.185 V
MCP1XX-450 0.044 — 0.263 V
MCP1XX-475 0.046 — 0.278 V

OL
OH

——0.4VI

VDD – 0.6 — — V IOH = 1 mA, For only MCP112

= 500 µA, V

OL

DD

(push-pull output)

— — 13.5

ODH

(3)

VMCP111 only,

= 3.0V, Time voltage >

V

DD

5.5V applied ≤ 100s,
current into pin limited to
2 mA , +25°C operation
recommended

Note 3, Note 4

I

OD

pin can be above the maximum device operational voltage (5.5V) is 100 sec. Current into the

OUT

—0.1—µA

®

microcontroller applications that require the In-Circuit

= V

OUT

TRIP(MIN)

). The

© 2005 Microchip Technology Inc. DS21889D-page 3

MCP111/112

V

TRIP

1V

V

V

OUT

DD

1V

t

RPU

t

RPD

V

OH

V

OL

t

RT

FIGURE 1-1: Timing Diagram.

AC CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 kΩ

(only MCP111), T

VDD Detect to V

Detect to V

V

DD

Rise Time After V

V

OUT

Note 1: These parameters are for design guidance only and are not 100% tested.

= -40°C to +125°C.

A

Parameters Sym Min Typ Max Units Conditions

Inactive t

OUT

Active

OUT

Active t

OUT

RPU

t

RPD

RT

—90 — µs

— 130 — µs

—5 —µs

Figure 1-1 and C
(Note 1)

V

ramped from V

DD

250 mV down to V
250 mV, per Figure 1-1,
C

= 50 pF (Note 1)

L

For V
value per Figure 1-1, C

(Note 1)

10% to 90% of final

OUT

= 50 pF

L

TRIP(MAX)

TRIP(MIN)

–

= 50 pF

L

+

TEMPERATURE CHARACTERISTICS

Electrical Specifications: Unless otherwise noted, all limits are specified for V
(only MCP111), T

Temperature Ranges

Specified Temperature Range T
Specified Temperature Range T
Maximum Junction Temperature T
Storage Temperature Range T

Package Thermal Resistances

Thermal Resistance, 3L-SOT23 θ
Thermal Resistance, 3L-SC-70 θ
Thermal Resistance, 3L-TO-92 θ
Thermal Resistance, 3L-SOT-89 θ

= -40°C to +125°C.

A

Parameters Sym Min Typ Max Units Conditions

A
A

J

A

JA
JA
JA
JA

-40 — +85 °C MCP1XX-195

-40 — +125 °C Except MCP1XX-195
——+150°C

-65 — +150 °C

— 336 — °C/W
— 340 — °C/W
—131.9 — °C/W
—110 —°C/W

= 1V to 5.5V, RPU = 100 kΩ

DD

DS21889D-page 4 © 2005 Microchip Technology Inc.

MCP111/112

0

0

2.0 TYPICAL PERFORMANCE CURVES

Note: The graphs and tables provided fol lowi ng this note are a st a tis tic al s umm ary based on a lim ite d n um ber of

samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

Note: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 kΩ (only MCP111;
see Figure 4-1), T

= -40°C to +125°C.

A

1.6

MCP111-195

1.4

1.2
1

0.8

(uA)

DD

I

0.6

0.4

0.2
0

-40

-20

0

FIGURE 2-1: I
(MCP111-195).

1.2

MCP112-300

1

0.8

0.6

(uA)

DD

I

0.4

0.2
0

-40

-20

0

20

40

60

Temperature (°C)

vs. Temperature

DD

2.1V

20

40

60

Temperature (°C)

1.6

5.5V

5.0V

4.0V

2.8V

2.1V

1.7V

1.0V

80

100

120

140

FIGURE 2-4: I

5.5V

5.0V

4.0V

2.8V

1.7V

1.0V

80

100

120

140

MCP111-195

1.4

1.2
1

0.8

(uA)

DD

I

0.6

0.4

0.2
0

1.02.03.04.05.06.

1.6

MCP112-300

1.4

1.2
1

0.8

(uA)

DD

I

0.6

0.4

0.2
0

1.0 2.0 3.0 4.0 5.0 6.0

+85°C

+125°C

+85°C

-40°C

+25°C

V

(V)

DD

vs. VDD (MCP111-195).

DD

+125°C

-40°C

+25°C

V

(V)

DD

FIGURE 2-2: I

vs. Temperature

DD

FIGURE 2-5: I

vs. VDD (MCP112-300).

DD

(MCP112-300).

1

MCP112-475

0.9

0.8

0.7

0.6

0.5

(uA)

DD

0.4

I

0.3

0.2

0.1
0

-40

-20

5.0V

0

FIGURE 2-3: I

4.0V

1.7V

1.0V

20

40

60

Temperature (°C)

vs. Temperature

DD

5.5V

2.1V

2.8V

80

100

120

140

1.6

MCP112-475

1.4

1.2
1

0.8

(uA)

DD

I

0.6

0.4

0.2
0

1.0 2.0 3.0 4.0 5.0 6.

+85°C

FIGURE 2-6: I

+125°C

-40°C

+25°C

V

(V)

DD

vs. VDD (MCP112-475).

DD

(MCP112-475).

© 2005 Microchip Technology Inc. DS21889D-page 5

MCP111/112

Note: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 kΩ (only MCP111;
see Figure 4-1), T

1.950

1.945

1.940

1.935

1.930

(V)

1.925

1.920

TRIP

V

1.915

1.910

1.905

1.900

1.895

-60 -10 40 90 140

= -40°C to +125°C.

A

V

, Hysteresis

HYS

MCP111-195
max temp is
+85°C

V

, V decreasing

TRIP

Temperature (°C)

V

, V increasing

TRIP

0.050

0.045

0.040

0.035

0.030

0.025

0.020

0.015

0.010

0.005

0.000

0.120

MCP111-195

= 1.7V

V

0.100

0.080

(V)

0.060

OL

Hyst (V)

V

0.040

0.020

DD

+125°C

+85°C

-40°C

+25°C

0.000

0.00 0.25 0.50 0.75 1.00
I

(mA)

OL

FIGURE 2-7: V

TRIP

and V

Temperature (MCP111-195).

3.040

V

, V increasing

TRIP

MCP112-300

V

, V decreasing

TRIP

V

, Hysteresis

HYS

(V)

TRIP

V

3.020

3.000

2.980

2.960

2.940

2.920

2.900

-60 -10 40 90 140
Temperature (°C)

FIGURE 2-8: V

TRIP

and V

Temperature (MCP112-300).

4.800

4.780

4.760

4.740

4.720

(V)

4.700

4.680

TRIP

V

4.660

4.640

4.620

4.600

4.580

V

, V increasing

TRIP

MCP112-475

V

, V decreasing

TRIP

-60 -20 20 60 100 140
Temperature (°C)

V

, Hysteresis

HYS

HYST

HYST

vs.

0.100

0.098

0.096

0.094

0.092

0.090

0.088

0.086

0.084

0.082

vs.

0.180

0.170

0.160

0.150

0.140

0.130

0.120

0.110

0.100

FIGURE 2-10: V
(MCP111-195 @V

0.080

MCP112-300

0.070

V

DD

= 2.7V

OL

= 1.7V).

DD

vs. IOL

0.060

0.050

(V)

0.040

OL

V

Hyst (V)

0.030

0.020

0.010

+125°C

+85°C

-40°C

+25°C

0.000

0.00 0.25 0.50 0.75 1.00
I

(mA)

OL

FIGURE 2-11: V
(MCP112-300 @V

0.050

MCP112-475

= 4.4V

V

0.040

0.030

(V)

OL

V

Hyst (V)

0.020

0.010

DD

OL

= 2.7V).

DD

+85°C

vs. IOL

+125°C

-40°C

+25°C

0.000

0.00 0.25 0.50 0.75 1.00
(mA)

I

OL

FIGURE 2-9: V

TRIP

and V

Temperature (MCP112-475).

HYST

vs.

FIGURE 2-12: V
(MCP112-475 @V

DD

vs. IOL

OL

= 4.4V).

DS21889D-page 6 © 2005 Microchip Technology Inc.

MCP111/112

0

Note: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 kΩ (only MCP111;

see Figure 4-1), T

= -40°C to +125°C.

A

(V)

OL

V

0.120

0.100

0.080

0.060

0.040

0.020

0.000

MCP111-195

= 1.7 V

V

DD

-40 0 40 80 120
Temperature (°C)

IOL = 1.00 mA

IOL = 0.75 mA

IOL = 0.50 mA

IOL = 0.25 mA

IOL = 0.00 mA

FIGURE 2-13: VOL vs. Temperature
(MCP111-195 @ V

0.080

MCP112-300

(V)

OL

V

0.070

0.060

0.050

0.040

0.030

0.020

0.010

0.000

= 2.7V

V

DD

-40 0 40 80 120

= 1.7V).

DD

Temperature (°C)

IOL = 1.00 mA

I

= 0.75 mA

OL

IOL = 0.50 mA

IOL = 0.25 mA

IOL = 0.00 mA

(V)

OH

V

3.150

3.100

3.050

3.000

2.950

2.900

MCP112-300

= 3.1V

V

DD

0.00 0.25 0.50 0.75 1.0

FIGURE 2-16: V
(MCP112-300 @ V

4.820

4.800

4.780

4.760

(V)

OH

4.740

V

4.720

4.700

4.680

0.00 0.25 0.50 0.75 1.00

DD

IOL (mA)

vs. IOH

OH

= 3.1V).

(mA)

I

OL

-40 °C

+85 °C

+25 °C

+85 °C

+25 °C

+125 °C

MCP112-475
V

= 4.8V

DD

-40 °C

+125 °C

FIGURE 2-14: V
(MCP112-300 @ V

0.050

MCP112-475
V

0.040

0.030

(V)

OL

V

0.020

0.010

0.000

-40 0 40 80 120

DD

DD

= 4.4V

FIGURE 2-15: V
(MCP112-475 @ V

DD

vs. Temperature

OL

= 2.7V).

IOL = 1.00 mA

Temperature (°C)

vs. Temperature

OL

= 4.4V).

IOL = 0.75 mA

IOL = 0.50 mA

IOL = 0.25 mA

IOL = 0.00 mA

FIGURE 2-17: V
(MCP112-475 @ V

600
500
400
300
200
100

Transient Duration (µs)

MCP112-300

MCP112-475

0

0.001 0.01 0.1 1 10

OH

= 4.8V).

DD

MCP111-195

V

TRIP

vs. IOH

(min) - V

DD

FIGURE 2-18: Typical Transient Response
(25 °C).

© 2005 Microchip Technology Inc. DS21889D-page 7

MCP111/112

Note: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 kΩ (only MCP111;

see Figure 4-1), T

= -40°C to +125°C.

A

350
300

VDD decreasing from:
5V - 1.7V

250
200

(µs)

150

RPD

t

100

VDD decreasing from:
5V - 0V

50

0

-40 -15 10 35 60 85 110

FIGURE 2-19: t
(MCP111-195).

160

MCP112-300

140
120
100

VDD decreasing from:

(µs)

5V - 2.7V

80

RPD

t

60
40

VDD decreasing from:

20

5V - 0V

0

-40 -15 10 35 60 85 110

VDD decreasing from:
V

+ 0.25V to V

TRIP(max)

Temperature (°C)

vs. Temperature

RPD

VDD decreasing from:
V

+ 0.25V to V

TRIP(max)

Temperature (°C)

MCP111-195

- 0.25V

TRIP(min)

- 0.25V

TRIP(min)

400
350
300
250

(µs)

200

RPU

t

150
100

VDD increasing from:
0V - 2.8V

50

0

-40 -15 10 35 60 85 110

FIGURE 2-22: t
(MCP111-195).

140
120
100

80

(µs)

60

RPU

t

40
20

0

-40 -15 10 35 60 85 110

VDD increasing from:
0V - 2.1V

Temperature (°C)

vs. Temperature

RPU

VDD increasing from:
0V - 3.1V

VDD increasing from:
0V - 3.3V

VDD increasing from:
0V - 4.0V

VDD increasing from:
0V - 5.5V

Temperature (°C)

MCP111-195

VDD increasing
from: 0V - 4.0V

VDD increasing
from: 0V - 5.5V

MCP112-300

FIGURE 2-20: t
(MCP112-300).

250

VDD decreasing from:
5V - 4.4V

200

150

(µs)

VDD decreasing from:

RPD

t

100

50

0

+ 0.25V to V

V

TRIP(max)

VDD decreasing from:
5V - 0V

-40 -15 10 35 60 85 110

FIGURE 2-21: t
(MCP112-475).

vs. Temperature

RPD

- 0.25V

TRIP(min)

Temperature (°C)

vs. Temperature

RPD

MCP112-475

FIGURE 2-23: t
(MCP112-300).

250

200

150

(µs)

RPU

100

t

50

0

-40 -15 10 35 60 85 110

FIGURE 2-24: t
(MCP112-475).

vs. Temperature

RPU

VDD increasing from:
0V - 4.9V

VDD increasing from:
0V - 5.0V

VDD increasing from:
0V - 5.5V

Temperature (°C)

vs. Temperature

RPU

MCP112-475

DS21889D-page 8 © 2005 Microchip Technology Inc.