Part NumberVCC RangeORG PinWord SizeTemp RangesPackages
93AA66A1.8-5.5No8-bitIP, SN, ST , MS, OT
93AA66B1.8-5-5No16-bitIP, SN, ST , MS, OT
93LC66A2.5-5.5No8-bitI, EP, SN, ST, MS, OT
93LC66B2.5-5.5No16-bitI, EP, SN, ST, MS, OT
93C66A4.5-5.5No8-bitI, EP, SN, ST, MS, OT
93C66B4.5-5.5No16-bitI, EP, SN, ST, MS, OT
93AA66C1.8-5.5Yes8 or 16-bitIP, SN, ST , MS
93LC66C2.5-5.5Yes8 or 16-bitI, EP, SN, ST , MS
93C66C4.5-5.5Yes8 or 16-bitI, EP, SN, ST, MS
Features
• Low-power CMOS technology
• ORG pin to select word size for ‘66C version
• 512 x 8-bit organization ‘A’ ver. devices (no ORG)
• 256 x 16-bit organization ‘B’ ver. devices (no
ORG)
The Microchip Technology Inc. 93XX66A/B/C devices
are 4K bit low voltage serial Electrically Erasable
PROMs (EEPROM). Word-selectable devices such as
the 93AA66C, 93LC66C or 93C66C are dependent
upon external logic levels driving the ORG pin to set
word size. For dedicated 8-bit communication, the
93AA66A, 93LC66A or 93C66A devices are available,
while the 93AA66B, 93LC66B and 93C66B devices
provide dedicated 16-bit communication. Advanced
CMOS technology makes these devices ideal for low
power, non-volatile memory applications. The entire
93XX Series is available in standard packages including 8-lead PDIP and SOIC, and advanced packaging
including 8-lead MSOP, 6-lead SOT-23, and 8-lead
TSSOP. Pb-free (Pure Matte Sn) finish is also
available.
SS ......................................................................................................... -0.6V to VCC +1.0V
Storage temperature ...............................................................................................................................-65°C to +150°C
Ambient temperature with power applied................................................................................................-40°C to +125°C
ESD protection on all pins ......................................................................................................................................................≥ 4kV
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rat ing on ly and funct ional operati on of th e dev ice at those or any oth er con dit ions abov e thos e
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
TABLE 1-1:DC CHARACTERISTICS
All parameters apply over the speci fied
ranges unless otherwise noted.
Param.
D1V
D2V
D3VOL1
D4VOH1
D5I
SymbolParameterMinTypMaxUnitsConditions
No.
IH1
IH2
V
IL1
IL2
V
High-level input volt ag e2.0
Low-level input voltage-0.3
Low-level output voltag e—
V
OL2
High-level output volt ag e2.4
OH2
V
LIInput leakage current——±1µAVIN = VSS to VCC
D6ILOOutput leakage current——±1µAVOUT = VSS to VCC
D7CIN,
C
OUT
Pin capacitance (all inputs/
outputs)
D8ICC write Write current—
D9I
D10I
CC read Read current—
CCSStandby current—
D11VPORVCC voltage detect
93AA66A/B/C, 93LC66A/B/C
93C66A/B/C
Note 1:This parameter is periodically sampled and not 100% tested.
2:ORG pin not available on ‘A’ or ‘B’ versions.
3:READY/BUSY status must be cleared from DO, see Section 3.4 "Data Out (DO)".
VCC = range by device (see Table on Page 1)
Industrial (I): T
Automotive (E): T
0.7 VCC
-0.3
—
VCC - 0.2——
A = -40°C to +85°C
A = -40°C to +125°C
——VCC +1
CC +1
V
—
—
—
—
0.8
0.2 VCC
0.4
0.2
—
—
VVV
CC≥ 2.7V
CC < 2.7V
V
VVVCC≥ 2.7V
CC < 2.7V
V
OL = 2.1 mA, VCC = 4.5V
VVI
I
OL = 100 µA, VCC = 2.5V
VVI
OH = -400 µA, VCC = 4.5V
OH = -100 µA, VCC = 2.5V
I
——7pFVIN/VOUT = 0V (Note 1)
T
A = 25°C, FCLK = 1 MHz
—
—
—
—
—
500
—
—
100
—
—
2
—
1
500
—
1
5
mAµAFCLK = 3 MHz, Vcc = 5.5V
CLK = 2 MHz, Vcc = 2.5V
F
mA
µA
µA
CLK = 3 MHz, VCC = 5.5V
F
CLK = 2 MHz, VCC = 3.0V
F
CLK = 2 MHz, VCC = 2.5V
F
µAµAI – Temp
E – Temp
CLK = Cs = 0V
ORG = DI = V
(Note 2) (Note 3)
—
—
1.5V
3.8V
—
—
VV(Note 1)
SS or VCC
DS21795B-page 2 2003 Microchip Technology Inc.
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
TABLE 1-2:AC CHARACTERISTICS
All parameters apply over the specified
ranges unless otherwise noted.
When the ORG* pin is connected to VCC, the (x16)
organization is selected. When it is connected to
ground, the (x8) organization is selected. Instructions,
addresses and write d ata a re clocke d into the D I pin on
the rising edge of the clock (CLK). The DO pin is
normally held in a HIGH-Z state except when reading
data from the device, or when checking the READY/
status during a programming operation. The
BUSY
READY/BUSY
Write operation by polli ng the DO pi n; DO low indicate s
that programming is still in progress, while DO high
indicates the de vi ce is rea dy. DO will enter the HIGH-Z
state on the falling edge of CS.
2.1Start Condition
The Start bit is detected by the device if CS and DI are
both high with respect to the positive edge of CLK for
the first time.
Before a Start conditi on is detect ed, CS, CL K, and DI
may change in any combination (except to that of a
Start condition), without resulting in any device
operation (READ, WRITE, ERASE, EWEN, EWDS,
ERAL, or WRAL). As soon as CS is high, the device is
no longer in Standby mode.
An instruction following a Start condition will only be
executed if the requi red opcode, address and data bits
for any particular instruction are clocked in.
status can be verified during an Erase/
2.2Data In/Data Out (DI/DO)
It is possible to connect the Data In and Data Out pins
together. However, with this configuration it is possible
for a “bus conflict” to occur during the “dummy zero”
that preced es t he R ead o per atio n, i f A0 i s a l ogi c hi gh
level. Under such a condition the voltage level seen at
Data Out i s undefined a nd will d epend upon the relativ e
impedances of Data Out and the signal source driving
A0. The higher the current sourcing capability of A0,
the higher the voltage at the Data Out pin. In order to
limit this current, a resistor should be connected
between DI and DO.
2.3Data Protection
All modes of operation ar e inhibited when VCC is below
a typical voltage of 1.5V for '93AA' and '93LC' devices
or 3.8V for '93C' devices.
The EWEN and EWDS commands give additional
protection against accidentally programming during
normal operation.
Note:For added protection, an EWDS command
should be performed after every write
operation.
After power-up, the device is automatically in the
EWDS mode. Therefore, an EWEN instruction must be
performed before the initial ERASE or WRITE instruction
can be executed.
Block Diagram
CCVSS
V
Memory
Array
Data Register
DI
Mode
ORG*
CS
CLK
*ORG input is not avai lable on A/B devices
Decode
Logic
Clock
Register
Address
Decoder
Address
Counter
Output
Buffer
DO
2003 Microchip Technology Inc.DS21795B-page 5
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
2.4ERASE
The DO pin indicates the READY/BUSY
device if CS is brought high after a minimum of 250 ns
The ERASE instruction forces all data bits of the specified address to the logical ‘1’ state. CS is brought low
following the loa ding of th e last a ddress b it. This fall ing
edge of the CS pin initiates the self-timed programming cycle, except on ‘93C’ devices where the rising
low (T CSL). DO at logical ‘0’ indicates that programming
is still in progress. DO at logical ‘1’ indicates that the
register at the specified address has been erased and
the device is ready for another instruction.
Note:Issuing a Start bit and then taking CS low
edge of CLK before the last address bit initiates the
write cycle.
FIGURE 2-1 :ER ASE TIMING FOR 9 3A A AN D 93LC D EV IC ES
CSL
T
CS
CLK
N
1A
AN-1AN-2
•••
A0
DO
1
DI
HIGH-Z
1
will clear the READY/BUSY
DO.
CHECK STATUS
T
SVTCZ
BUSYREADY
status of the
status from
HIGH-Z
FIGURE 2-2:ERASE TIMING FOR 93C DEVICES
CS
CLK
DO
DI
HIGH-Z
1
1
1A
N
AN-1AN-2
•••
A0
WC
T
CSL
T
CHECK STATUS
T
SVTCZ
BUSYREADY
WC
T
HIGH-Z
DS21795B-page 6 2003 Microchip Technology Inc.
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
2.5ERASE ALL (ERAL)
The Erase Al l (ERAL) instruction will erase the entire
memory array to the logical ‘1’ state. The ERAL cycle is
identical to the ERASE cycle, except for the different
The DO pin indicates the READY/BUSY
device, if CS is brough t high a fter a minimum of 250 n s
low (TCSL).
Note:Issuing a Start bit and then taking CS low
opcode. The ERAL cycle is completely self-timed and
commences at the falling edge of the CS, except on
CC must be ≥ 4.5V for proper operation of ERAL.
‘93C’ devices where the rising edge of CLK before the
V
last data bit initiates the write cycle. Clocking of the
CLK pin is not necessary after the device has entered
the ERAL cycle.
FIGURE 2-3 :ER AL T IM I NG F OR 93 AA A ND 9 3L C DEV I C ES
CSL
T
CS
CLK
DI
DO
HIGH-Z
VCC must be ≥ 4.5V for proper operation of ERAL.
10010X
•••
X
will clear the READY/BUSY
DO.
CHECK STATUS
T
SVTCZ
BUSYREADY
EC
T
HIGH-Z
status of the
status from
FIGURE 2-4:ER AL T IM ING FO R 93C DEV ICES
CS
CLK
DO
DI
HIGH-Z
10010X
•••
CSL
T
CHECK STATUS
X
T
SVTCZ
BUSYREADY
T
EC
HIGH-Z
2003 Microchip Technology Inc.DS21795B-page 7
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
2.6ERASE/WRITE DISABLE And ENABLE (EWDS/EWEN)
The 93XX66A/B/C powers up in the ERASE/WRITE
Disable (EWDS) state. All Programming modes must be
preceded by an ERASE/WRITE En able (EWEN) instruction. Once the EWEN instruction is executed, programming remains enabled until an EWDS instruction is
executed or Vcc is removed from the device.
FIGURE 2-5:EWDS TIMING
CS
CLK
DI
10
000X
FIGURE 2-6:EWEN TIMING
CS
To protect against accidental data disturbance, the
EWDS instruction can be used to disable all ERASE/
WRITE functions and should follow all programming
operations. Executio n of a READ instruction i s ind ependent of both the EWEN and EWDS instructions.
T
CSL
•••
X
TCSL
CLK
1X
DI
00 1 1X
2.7READ
The READ instruction outputs the serial data of the
addressed memory lo cation on the DO pin. A dummy
zero bit precedes the 8-bit (If O RG pin is low or A-V e rsion
devices) or 16-bit (If ORG pin is high or B-version
FIGURE 2-7 :R EAD TIMING
CS
CLK
A0
•••
An
0Dx
DO
DI
110
HIGH-Z
•••
devices) output st rin g. The ou tput dat a bi t s will toggle on
the rising edge of the CLK and are stable after the
specified ti me delay (T
PD). Sequential read is possible
when CS is held high. The memory data will automatically cycle to the next register and output sequentially.
•••
D0Dx
•••
D0
DxD0
•••
DS21795B-page 8 2003 Microchip Technology Inc.
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
2.8WRITE
The WRITE instruction is followed by 8 bits (If ORG is
low or A-version device s) or 16 b its (If OR G pi n is hig h
or B-version devices) of data which are wr itten into th e
specified address. For 93AA66A/B/C and 93LC66A/B/C
devices, after the last data bit is clocked into DI, the
falling edge of CS initiates the self-timed auto-erase and
programming cycle. For 93 C66A/ B/C d evices , the se lf-
The DO pin indicates the READY/BUSY
device, if CS is brough t high a fter a minimum of 250 n s
low (T CSL). DO at logical ‘0’ indicates that programming
is still in progress. DO at logical ‘1’ indicates that the
register at the specified address has been written with
the data specified and the device is ready for another
instruction.
Note:Issuing a Start bit and then taking CS low
timed auto-erase and pr ogramming cycle is initiated by
the rising edge of CLK on the last data bit.
FIGURE 2-8:WRITE TIMING FOR 93AA AND 93LC DEVICES
T
CSL
CS
CLK
0
DI
DO
1
HIGH-Z
1An
•••
A0Dx
•••
D0
will clear the READY/BUSY
DO.
TSV
BUSY
READY
status of the
status from
TCZ
HIGH-Z
FIGURE 2-9:WR ITE T IM ING FOR 93C DEV ICES
CS
CLK
0
DI
DO
1
HIGH-Z
1An
•••
A0Dx
•••
D0
Twc
T
CSL
Twc
TSV
BUSY
READY
TCZ
HIGH-Z
2003 Microchip Technology Inc.DS21795B-page 9
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
2.9WRITE ALL (WRAL)
The Write All (WRAL) instruction will write the entire
memory array with the data specified in the command.
For 93AA66A/B/C and 93LC 66A/B/C de vices , after th e
last data bit is clocked into DI, the falling edge of CS
initiates the self-timed auto-erase and programming
cycle. For 93C66A/B/C devices, the self-timed auto-
automatic ERAL cycle for the device. Therefore, the
WRAL instruction does not require an ERAL instruction
but the chip must be in the EWEN status.
The DO pin indicates the READY/BUSY
device if CS is brought high after a minimum of 250 ns
CSL).
low (T
Note:Issuing a Start bit and then taking CS low
erase and programming cycle is initiated by the rising
edge of CLK on the last data bit. Clocking of the CLK
pin is not necessary after the device has entered the
WRAL cycle. The WRAL command does include an
CC must be ≥ 4.5V for proper operation of WRAL.
V
FIGURE 2-10:WRAL TIMING FOR 93AA AND 93LC DEVICES
CS
CLK
DO
0
DI
1
HIGH-Z
01X
0
•••
Dx
X
•••
status of the
will clear the READY/BUSY status from
DO.
TCSL
D0
TSV
READY
BUSY
WL
T
TCZ
HIGH-Z
VCC must be ≥ 4.5V for proper operation of WRAL.
FIGURE 2-11:WRAL TIMING FOR 93C DEV ICES
CS
CLK
DO
0
DI
1
HIGH-Z
01X
0
•••
X
Dx
•••
D0
TCSL
TSV
READY
BUSY
WL
T
TCZ
HIGH-Z
DS21795B-page 10 2003 Microchip Technology Inc.
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
3.0PIN DESCRIPTIONS
TABLE 3-1:PIN DESCRIPTIONS
Name
CS153Chip Select
CLK244Serial Clock
DI335Data In
DO416Data Out
SS527Ground
V
ORG/NC6N/A8Organizatio n / 93XX66C
NC7N/A1No Inte rna l Connecti on
VCC862Power Supply
3.1Chip Select (CS)
A high level sel ects the device; a low lev el deselects
the device and fo rces it into S t andby mo de. Howev er , a
programming cycle wh ic h is al ready in progress will be
completed, regardless of the Chip Select (CS) input
signal. If CS is brou gh t l ow duri ng a p rogram cycle, the
device will go into Standby mode as soon as the
programming cycle is com pleted.
CS must be low for 250 ns minimum (T
consecutive instructions. If CS is low, the internal
control logic is held in a Reset status.
3.2Serial Clock (CLK)
The Serial Clock is used to synchronize the communication between a master device and the 93XX series
device. Opcodes, address and data bits are clocked in
on the positive edge of C LK. Dat a bit s are also c locke d
out on the positive edge of CLK.
CLK can be stopped anywhere in the transmission
sequence (at high or low level) and can be continued
anytime with respect to clock high time (T
clock low time (T
freedom in preparing opcode, address and data.
CLK is a “Don't Care” if CS is low (device deselected).
If CS is high, but the Start condition has not been
detected (DI = 0), any number of clock cycle s can be
received by the device without changing its status (i.e.,
waiting for a Start condition).
CLK cycles are not required during the self-timed Write
(i.e., auto ERASE/WRITE) cycle.
After detection of a S ta rt condition t he specified numb er
of clock cycle s (respectively low-to-high tr ansitions of
CLK) must be provided. These clock cycles are
required to clock in all required opcode, address and
SOIC/PDIP/
MSOP/TSSOP
CKL). This gives the controlling master
SOT-23Rotated SOICFunction
CSL) between
CKH) and
No Internal Connection / 93XX66A/B
data bits b efor e an instruction is executed. CL K and DI
then become don't care inputs waiting for a new Start
condition to be detected.
3.3Data In (DI)
Data In (DI) is used to clock in a Start bit, opcode,
address and data synchronously with the CLK input.
3.4Data Out (DO)
Data Out (DO) is used in the READ mode to output
data synchronously with the CLK input (T
positive edge of CLK).
This pin also provides READY/BUSY
tion during ERASE and WRITE cycles. READY/BUSY
status information is available on the DO pin if CS is
brought high after being low for minimum Chip Select
low time (T
been initiated.
The Status signal is not available on DO, if CS is held
low during th e entire ERASE or W RITE cycle. In this
case, DO is in the HIGH-Z mode. If status is checked
after the ERASE/WRITE cycle, the d ata line will be hig h
to indicate the device is ready.
Note:Issuing a Start bit and then taking CS low
CSL) and an Erase or Write operation has
will clear the READY/BUSY
DO.
3.5Organization (ORG)
When the ORG pin i s connected to VCC or Logic HI, th e
(x16) memory organiza tion is sel ected. Whe n the ORG
pin is tied to V
organization is selected. For proper operation, ORG
must be tied to a valid logic level.
93XX66A devices are always x8 organization and
93XX66B devices are always x16 organization.
SS or Logic LO, the (x8) memory
PD after the
status informa-
status from
2003 Microchip Technology Inc.DS21795B-page 11
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
4.0PACKAGING INFORMATION
4.1Package Marking Information
8-Lead MSOP (150 mil)
XXXXXXT
YWWNNN
6-Lead SOT-23
XXNN
8-Lead PDIP
XXXXXXXX
XXXXXNNN
YYWW
8-Lead SOIC
Example:
3L66BI
2281L7
Example:
3EL7
Example:
93LC66B
I/P 1L7
0228
Example:
MSOP 1st Line Marking Codes
Device
93AA66A
93AA66B
93AA66C
93LC66A
93LC66B
93LC66C
93C66A
93C66B
93C66C
T = blank for commercial, “I” for Industrial,
“E” for Extended.
SOT23 Marking Codes
Device
93AA66A
93AA66B
93LC66A
93LC66B
93C66A
93C66B
Pb-free topside mark is same; Pb-free
noted only on carton label.
TTemperature
Blank Commercial
IIndustrial
E Extended
YYYear code (last 2 digits of calendar year) except TSSOP
and MSOP which use only the last 1 digit
WWWeek code (week of January 1 is week ‘01’)
NNNAlphanumeric traceability code
Note:Custom marking available.
93LC66B
I/SN 0228
1L7
Example:
L66B
I228
1L7
TSSOP 1st Line Marking Codes
Device
93AA66A
93AA66B
93AA66C
93LC66A
93LC66B
93LC66C
93C66A
93C66B
93C66C
Temperature grade is marked on line 2.
std mark
A66A
A66B
A66C
L66A
L66B
L66C
C66A
C66B
C66C
Pb-free
mark
GACA
GACB
GACC
GLCA
GLCB
GLCC
GCCA
GCCB
GCCC
DS21795B-page 12 2003 Microchip Technology Inc.
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
8-Lead Plastic Micro Small Outline Package (MS) (MSOP)
Number of Pins
Pitch
Top to Seating PlaneA.140.155.1703.563.944.32
Molded Package ThicknessA2.115.130.1452.923.303.68
Base to Seating PlaneA1.0150.38
Shoulder to Shoulder WidthE.300.313. 3257.627.948.26
Molded Package WidthE1.240.250.2606.106.356.60
Overall LengthD.360.373.3859.149.469.78
Tip to Seating PlaneL.125.130.1353.183.303.43
Lead Thickness
Upper Lead WidthB1.045.058.0701.141.461.78
Lower Lead WidthB.014.018.0220.360.460.56
Overall Row Spacing§eB.310.370.4307.879.4010.92
Mold Draft Angle Top
Mold Draft Angle Bottom
* Controlling Parameter
§ Significant Characteristic
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-001
Drawing No. C04-018
Dimension LimitsMINNOMMAXMINNOMMAX
1
α
A
c
UnitsINCHES*MILLIMETERS
n
p
c
α
β
.008.012.0150.200.290.38
A1
B1
B
88
.1002.54
51015 51015
51015 51015
A2
L
p
2003 Microchip Technology Inc.DS21795B-page 15
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
8-Lead Plastic Small Outline (SN) – Narrow, 150 mil (SOIC)
E
E1
p
D
2
B
Number of Pins
Pitch
Standoff §
Foot Angle
Lead Thickness
Mold Draft Angle Top
Mold Draft Angle Bottom
* Controlling Parameter
§ Significant Characteristic
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-012
Drawing No. C04-057
n
45°
c
β
n
p
A1
φ
c
α
β
1
h
A
φ
L
048048
A1
MILLIMETERSINCHES*Units
1.27.050
α
A2
MAXNOMMINMAXNOMMINDimension Limits
88
1.751.551.35.069.061.053AOverall Height
1.551.421.32.061.056.052A2Molded Packag e Thickness
8-Lead Plastic Thin Shrink Small Outline (ST) – 4.4 mm (TSSOP)
E
E1
p
D
2
n
B
1
A
c
A1
φ
β
A1
n
p
φ
c
α
β
048048
Number of Pins
Pitch
Standoff §
Foot Angle
Lead Thickne ss
Mold Draft Angle Top
Mold Draft Angle Bottom
* Controlling Parameter
§ Significant Characteristic
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.005” (0.127mm) per side.
JEDEC Equivalent: MO-153
Drawing No. C04-086
Corrections to Section 1.0, Electrical Characteristics.
Section 4.1, 6-Lead SOT-23 package to OT.
DS21795B-page 18 2003 Microchip Technology Inc.
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
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• Latest Microchip Press Releases
• Technical Support Section with Frequently Asked
Questions
• Design Tips
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• Job Postings
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• Links to other useful web sites related to
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• Conferences for p roducts, D evelopment Systems,
technical information and more
• Listing of seminars and events
®
or Microsoft
SYSTEMS INFORMATION AND
UPGRADE HOT LINE
The Systems Information and Upgrade Line provides
system users a listing of the latest versions of all of
Microchip's development systems software products.
®
Plus, this line provides information on how customers
can receive the most c urrent upgra de kit s.The Hot Lin e
Numbers are:
1-800-755-2345 for U.S. and most of Canada, and
1-480-792-7302 for the rest of the world.
042003
2003 Microchip Technology Inc.DS21795B-page 19
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
READER RESPONSE
It is our intentio n to pro vi de you with the best documentation possible to ens ure suc c es sfu l u se of y ou r M ic roc hip product. If you wish to provid e your c omment s on org anizatio n, clarity, subject matter , and ways in w hich our d ocument atio n
can better serve you, please FAX your comments to the Technical Publications Manager at (480) 792-4150.
Please list the following information, and use this outline to provide us with your comments about this document.
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Questions:
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2. How does this document meet your hardware and software development needs?
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DS21795B93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
4. What additions to the document do you think would enhance the structure and subject?
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7. How would you improve this document?
DS21795B-page 20 2003 Microchip Technology Inc.
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.X
Device
X
Pinout
X
Tape & Reel
Temperature
/XX
Package
Range
Device93AA66A: 4K 1.8V Mic r owire Serial EEPROM
Pinout:Blank =Standard pinout
Tape & Reel:Blank =Standard packaging
Temperature RangeI= -40°C to +85°C
PackageMS=Plastic MSOP (Micro Small outline, 8-lead)
93AA66B: 4K 1.8V Microwire Serial EEPROM
93AA66C: 4K 1.8V Microwire Serial EEPROM w/ORG
93LC66A: 4K 2.5V Microwire Serial EEPROM
93LC66B: 4K 2.5V Microwire Serial EEPROM
93LC66C: 4K 2.5V Microwire Serial EEPROM w/ORG
93C66A: 4K 5.0V Microwire Serial EEPROM
93C66B: 4K 5.0V Microwire Serial EEPROM
93C66C: 4K 5.0V Microwire Serial EEPROM w/ORG
X=Rotated pinout
T=Tape & Reel
E= -40°C to +125°C
OT=SOT-23, 6-lead (Tape & Reel only)
P=Plastic DIP (300 mil body), 8-lead
SN=Plastic SOIC (150 mil body), 8-lead
ST=TSSOP, 8-lead
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences
and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of
the following:
1.Your local Microchip sales office
2.The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277
3.The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
New Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
2003 Microchip Technology Inc.DS21795B-page 21
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
NOTES:
DS21795B-page 22 2003 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•Microchip products meet the specification contained in their particular Microchip Data Sheet.
•Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•Microchip is willing to work with the customer who is concerned about the integrity of their code.
•Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the co de protection fea tures of our
products. Attempts to break microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is intended through suggestion only
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
No representation or warranty is given and no liability is
assumed by Microchip Technology Incorporated with respect
to the accuracy or use of such information, or infringement of
patents or other intellectual property rights arising from such
use or otherwise. Use of Microchip’s products as critical components in life support systems is not authorized except with
express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property
rights.
Trademarks
The Microchip name and logo, the Microchip logo, Accuron,
dsPIC, K
EELOQ, MPLAB, PIC, PICmic ro, PI C START,
PRO MATE and PowerSmart are registered trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
AmpLab, FilterLab, microID, MXDEV, MXLAB, PI CMASTER,
SEEVAL and The Embedded Control Solutions Company are
registered trademarks of Microchip Technology Incorporated
in the U.S.A.
Application Maestro, dsPICDEM, dsPICDEM.net, ECAN,
ECONOMONITOR, FanSense, FlexROM, fuzzyLAB,
In-Circuit Serial Programming, ICSP, ICEPIC, microPort,
Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM,
PICkit, PICDEM, PICDEM.net, PowerCal, PowerInfo,
PowerMate, PowerTool, rfLAB, rfPIC, Select Mode,
SmartSensor, SmartShunt, SmartT el and Total Endurance are
trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
Serialized Quick Turn Programming (SQTP) is a service mark
of Microchip Technology Incorporated in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
Microchip received QS-9000 quality system
certification for its worldwide headquarters,
design and wafer fabrication facilities in
Chandler and Tempe, Arizona in July 1999
and Mountain View, California in March 2002.
The Company’s quality system processes and
procedures are QS-9000 compliant for its
PICmicro
devices, Serial EEPROMs, microperipherals,
non-volatile memory and analog products. In
addition, Microchip’s quality system for the
design and manufacture of development
systems is ISO 9001 certified.
®
8-bit MCUs, KEELOQ
®
code hopping
2003 Microchip Technology Inc.DS21795B-page 23
WORLDWIDE SALESAND SERVICE
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