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93LC46A/B
1K 2.5V Microwire
FEATURES
• Single supply with operation down to 2.5V
• Low power CMOS technology
- 1 mA active current (typical)
- 1 µA standby current (maximum)
• 128 x 8 bit organization (93LC46A)
• 64 x 16 bit organization (93LC46B)
• Self-timed ERASE and WRITE cycles
(including auto-erase)
• Automatic ERAL before WRAL
• Power on/off data protection circuitry
• Industry standard 3-wire serial interface
• Device status signal during ERASE/WRITE
cycles
• Sequential READ function
• 1,000,000 E/W cycles guaranteed
• Data retention > 200 years
• 8-pin PDIP/SOIC and 8-pin TSSOP packages
• Available for the following temperature ranges:
- Commercial (C): 0°C to +70°C
- Industrial (I): -40°C to +85°C
®
Serial EEPROM
BLOCK DIAGRAM
ADDRESS
DECODER
ADDRESS
COUNTER
OUTPUT
BUFFER
Vcc
Vss
DI
CS
CLK
MEMORY
ARRAY
DATA
REGISTER
MODE
DECODE
LOGIC
CLOCK
GENERATOR
DESCRIPTION
The Microchip Technology Inc. 93LC46AX/BX are 1Kbit, low voltage serial Electrically Erasable PROMs.
The device memory is configured as x8 (93LC46A) or
x16 bits (93LC46B). Advanced CMOS technology
makes these devices ideal for low power nonvolatile
memory applications. The 93LC46AX/BX is available
in standard 8-pin DIP, 8-pin surface mount SOIC, and
TSSOP packages. The 93LC46 AX/BX are of fered only
in a 150-mil SOIC package.
DO
PACKAGE T YPE
DIP
CS
1
CLK
DI
DO
Microwire is a registered trademark of National Semiconductor Incorporated.
2000 Microchip Technology Inc. DS21173E-page 1
93LC46A/B
2
3
4
Vcc
8
NC
7
6
NC
5
Vss
CS
CLK
DO
1
2
3
DI
4
8
93LC46A/B
V
7
NC
6
NC
5
Vss
NC
CC
Vcc
CS
CLK
SOICSOIC
93LC46AX/BX
1
2
3
4
8
NC
7
Vss
6
DO
5
DI
CS
CLK
DO
TSSOP
93LC46A/B
1
2
3
DI
4
8
Vcc
7
NC
6
NC
5
Vss
93LC46A/B
1.0 ELECTRICAL
CHARACTERISTICS
1.1 Maximum Ratings*
Vcc...................................................................................7.0V
All inputs and outputs w.r.t. Vss ...............-0.6V to Vcc +1.0V
Storage temperature.....................................-65°C to +150°C
Ambient temp. with power applied................-65°C to +125 °C
Soldering temperature of leads (10 seconds) .............+300°C
ESD protection on all pins.................................. ..............4 kV
*Notice: Stresses abov e those listed under “Maximum ratings” may
cause permanent damage to the device. This is a stress rating only and
functional operation of the device at those or any other conditions
above those indicat ed in th e o per ati o nal li st i ngs of t his sp ecific a tion i s
not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.
TABLE 1-1 PIN FUNCTION TABLE
Name Function
CS Chip Select
CLK Serial Data Clock
DI Serial Data Input
DO Serial Data Output
VSS Ground
NC No Connect
CC Power Supply
V
TABLE 1-2 DC AND AC ELECTRICAL CHARACTERISTICS
All parameters apply over the specified
operating ranges unless otherwise
noted
Parameter Symbol Min. Max. Units Conditions
High level input voltage
Low level input voltage
Low level output voltage
High level output voltage
Input leakage current I
Output leakage current I
Pin capacitance
(all inputs/outputs)
Operating current
Standby current I
Clock frequency FCLK —
Clock high time T
Clock low time T
Chip select setup time T
Chip select hold time T
Chip select low time T
Data input setup time T
Data input hold time T
Data output delay time T
Data output disable time T
Status valid time T
Program cycle time
Endurance — 1M — cycles 25°C, V
Note 1: This parameter is tested at Tamb = 25°C and Fclk = 1 MHz.
2: This parameter is periodically sampled and not 100% tested.
3: This application is not tested but guaranteed by characterization. For endurance estimates in a specific application, please consult the Total
Endurance Model which may be obtained on our website.
Commercial (C): VCC = +2.5V to +6.0V Tamb = 0°C to +70°C
Industrial (I): V
IH12.0Vcc +1 V2.7V < VCC ≤ 6.0 V (Note 2)
V
IH2 0.7 VCC Vcc +1 V VCC < 2.7V
V
IL1-0.3 0.8 VVCC > 2.7V (Note 2)
V
IL2 -0.3 0.2 Vcc V VCC < 2.7V
V
OL1 — 0.4 V IOL = 2.1 mA; Vcc = 4.5V
V
OL2 — 0.2 V IOL =100 µA; Vcc = Vcc Min.
V
OH12.4 — VIOH = -400 µA; Vcc = 4. 5V
V
OH2VCC-0.2 — VIOH = -100 µA; Vcc = Vcc Min.
V
LI -10 10 µA VIN = VSS to Vcc
LO -10 10 µA VOUT = VSS to Vcc
IN, COUT — 7pF
C
CC write — 1.5 mA
I
CC read
I
CCS — 1 µA CS = Vss; DI = VSS
CKH 250 — ns
CKL 250 — ns
CSS 50 — ns Relative to CLK
CSH 0 — ns Relative to CLK
CSL 250 — ns
DIS 100 — ns Relative to CLK
DIH 100 — ns Relative to CLK
PD — 400 ns CL = 100 pF
CZ — 100 ns CL = 100 pF (Note 2)
SV — 500 ns CL = 100 pF
T
WC — 6msERASE/WRITE mode
EC — 6 ms ERAL mode
T
WL — 15 ms WRAL mode
T
CC = +2.5V to +6.0V Tamb = -40°C to +85°C
— 1
500
2
1
mA
µA
MHz
MHz
V
IN/VOUT = 0 V (Notes 1 & 2)
Tamb = +25°C, F
CLK = 2 MHz; Vcc = 6.0V
F
CLK = 1 MHz; Vcc = 3.0V
F
CC > 4.5V
V
V
CC < 4.5V
CLK = 1 MHz
CC = 5.0V, Block Mode (Note 3)
DS21173E-page 2 2000 Microchip Technology Inc.
93LC46A/B
2.0 PIN DESCRIPTION
2.1 Chip Select (CS)
A high level selects the device; a low level deselects
the device and forc es it into s tandb y mod e. H owever, a
programming cycle wh ic h is al ready in progress will be
completed, regardless of the Chip Select (CS) input
signal. If CS is brou gh t l ow duri ng a p rogram cycle, the
device will go into stand by mode as soon as the programming cycle is completed.
CS must be low for 250 ns minimum (T
consecutive instructions. If CS is low, the internal control logic is held in a RESET status.
2.2 Serial Clock (CLK)
The Serial Clock is used to synchronize the communication between a master device and the 93LC46AX/
BX. Opcodes, address, and data bits are clocked in on
the positive edge o f CLK. Data bits are also clocked out
on the posit ive edge of CL K.
CLK can be stopped anywhere in the transmission
sequence (at high or low level) and can be continued
anytime with respect to clock high time (T
clock low time (T
CKL). This gives the controlling master
freedom in preparing opcode, address, and data.
CLK is a “Don't Care” if CS is low (device deselected).
If CS is high, but the START condition has not been
detected, an y number of cloc k cycles can be rec eived
by the device without changing its status (i.e., waiting
for a START condition).
TABLE 2-1 INSTRUCTION SET FOR 93LC46A
CSL) between
CKH) and
CLK cycles are not required during the self-timed
WRITE (i.e., auto ERASE/WRITE) cycle.
After detection of a ST ART cond ition the spec ified number of clock cycles (respectively low to high transitions
of CLK) must be provided. These clock cycles are
required to clock in all required opcode, address, and
data bits before an instruction is executed (Table 2-1
and Table 2-2). CLK and DI then become don't care
inputs waiting for a new START condition to be
detected.
2.3 Data In (DI)
Data In (DI) is used to clock in a START bit, opcode,
address, and data synchronously with the CLK input.
2.4 Data Out (DO)
Data Out (DO) is used in the READ mode to outpu t
data synchronously with the CLK input (T
positive edge of CLK).
This pin also provides READY/BUSY
tion during ERASE and WRITE cycles. READY/BUSY
status information is available on the DO pin if CS is
brought high after being low for minimum chip select
low time (TCSL) and an ERASE or WRITE operation
has been initiated.
The status signal is not available on DO, if CS is held
low during th e entire ERASE or W RITE cycle. In this
case, DO is in the HIGH-Z mode. If status is checked
after the ERASE/WRITE cycle, the data line will be hig h
to indicate the device is ready.
PD after the
status informa-
Instruction SB Opcode Address Data In Data Out Req. CLK Cycles
ERASE
ERAL
EWDS
EWEN
READ
WRITE
WRAL
1 11 A6 A5 A4 A3 A2 A1 A0 — (RDY/BSY)10
1 00 10XXXXX — (RDY/BSY)10
1 00 00XXXXX — HIGH-Z 10
1 00 11XXXXX — HIGH-Z 10
1 10 A6 A5 A4 A3 A2 A1 A0 — D7 - D0 18
1 01 A6 A5 A4 A3 A2 A1 A0 D7 - D0 (RDY/BSY)18
1 00 0 1 X X X X X D7 - D0 (RDY/BSY)18
TABLE 2-2 INSTRUCTION SET FOR 93LC46B
Instruction SB Opcode Address Data In Data Out Req. CLK Cycles
ERASE
ERAL
EWDS
EWEN
READ
WRITE
WRAL
1 11 A5 A4 A3 A2 A1 A0 — (RDY/BSY)9
1 00 10XXXX — (RDY/BSY)9
1 00 00XXXX — HIGH-Z 9
1 00 11XXXX — HIGH-Z 9
1 10 A5 A4 A3 A2 A1 A0 — D15 - D0 25
1 01 A5 A4 A3 A2 A1 A0 D15 - D0 (RDY/BSY)25
1 00 0 1 X X X X D15 - D0 (RDY/B SY)25
2000 Microchip Technology Inc. DS21173E-page 3
93LC46A/B
3.0 FUNCTIONAL DESCRIPTION
Instructions, add resses, and wri te data are cl ocked into
the DI pin on the rising e dge of the clock (CLK ). The DO
pin is normally held in a HIGH-Z state except when
reading data from the device, or when checking the
READY/BUSY
The READY/BUSY
ERASE/WRITE operation by polling the DO pin; DO
low indicates that programming is still in progress,
while DO high ind icates the devic e is ready . Th e DO will
enter the HIGH-Z state on the falling edge of the CS.
3.1 START Condition
The START bit is detected by the device if CS and DI
are both high with respect to the positive edge of CLK
for the first time.
Before a ST ART condi tion is detected, CS, CLK, and DI
may change in any combination (except to that of a
ST ART conditio n), without re sulting i n any devic e operation (ERASE, ERAL, EWDS, EWEN, READ, WRITE,
and WRAL). As soon as CS is high, the device is no
longer in the standby mode.
An instruction following a START condition will only be
executed if the required amount of opcodes,
addresses, and data bits for any parti cular instructio n is
clocked in.
status during a programming operation.
status can be verified during an
After execution of an instruction (i.e., clock in or out of
the last required address or data bit) CLK and DI
become don’t care bits un til a new START condition is
detected.
3.2 Data In (DI) and Data Out (DO)
It is possible to connect the Data In (DI) and Data Out
(DO) pins together. However, with this configuration, if
A0 is a logic-high le ve l, i t is po ss ible for a “bus conflict”
to occur during the “dummy zero” that precedes the
READ operati on. Under such a co ndition the volta ge
level seen at D O is und efined an d will depend u pon the
relative impedances of DO and the signal source driving A0. The higher the cu rrent sourcing c apability of A0,
the higher the voltage at the DO pin.
3.3 Data Protection
During power-up, all programming modes of operation
are inhibited until Vc c has reac he d a l ev el g reate r tha n
2.2V. During power-down, the source data protection
circuitry acts to inhibit all programming modes when
Vcc has fallen below 2.2V at nominal conditions.
The ERASE/WRITE Disable (EWDS) and ERASE/
WRITE Enable (EWDS) commands give additional
protection against accidentally programming during
normal operation.
FIGURE 3-1: SYNCHRONOUS DATA TIMING
VIH
CS
CSS
VIL
VIH
CLK
VIL
TDIS
VIH
DI
VIL
VOH
DO
(READ)
(PROGRAM)
Note: AC Test Conditions: VIL = 0.4V, VIH = 2.4V
DO
VOL
VOH
VOL
T
TSV
TCKH
TDIH
TPD
TCKL
STATUS VALID
TPD
TCSH
TCZ
TCZ
DS21173E-page 4 2000 Microchip Technology Inc.
93LC46A/B
3.4 ERASE
The ERASE instruction forces all data bits of the specified address to the logical “1” state. CS is brought low
following the loa ding of the last address bit. This falling
edge of the CS pin initiates the self-timed programming
cycle.
The DO pin indicates the READY/BUSY
status of the
device if CS is brought high after a minimum of 250 ns
low (TCSL). DO at logical “0” indicates that program-
ming is still in progress. DO at logical “1” indicates that
the register at the specified address has been erased
and the device is ready for another instruction.
FIGURE 3-2: ERASE TIMING
CS
CLK
DI
1
1
1A
N
AN-1 AN-2
3.5 Erase All (ERAL)
The Erase All (ERAL) instruction will erase the entire
memory array to the logical “1” state. The ERAL cycle
is identical to the ERASE cyc le, ex cept f or th e d ifferent
opcode. The ERAL cycle is completely self-timed and
commences at the falling edge of the CS. Clocking of
the CLK pin is not necessary after the device has
entered the ERAL cycle.
The DO pin indicates the READY/BUSY
device, if CS is brough t high a fter a minimum of 250 n s
low (T
CSL) and before the entire ERAL cycle is com-
plete.
CSL
T
CHECK STATUS
A0
•••
SV TCZ
T
status of the
DO
HIGH-Z
FIGURE 3-3: ERAL TIMING
CS
CLK
DI
DO
HIGH-Z
Guaranteed at Vcc = 4.5V to +6.0V.
100 10X
•••
BUSY READY
T
WC
T
CSL
CHECK STATUS
X
T
SV TCZ
BUSY READY
T
EC
HIGH-Z
HIGH-Z
2000 Microchip Technology Inc. DS21173E-page 5
93LC46A/B
3.6 ERASE/WRITE Disable and Enable
(EWDS/EWEN)
The 93LC46A/B powers up in the ERASE/WRITE Disable (EWDS) st ate. All programmin g modes must be
preceded by an ERASE/WRITE Enable (EWEN)
instruction. Once the EWEN instruction is executed,
programming remains enabled until an EWDS instruction is executed or Vcc is removed from the device. To
protect against accide ntal data dist urbance, the EWD S
instruction can be used to disable all ERASE/WRITE
functions and should follow all programming operations. Execution of a READ instruction is independent
of both the EWEN and EWDS instructions.
FIGURE 3-4: EWDS TIMING
CS
CLK
3.7 READ
The READ instruction outputs the serial data of the
addressed memory location on the DO pin. A dummy
zero bit precedes the 8-bit (93LC46A) or 16-bit
(93LC46B) output string. The output data bits will toggle on the rising edge of the CLK and are stable after
the specified time delay (T
sible when CS is he ld hi gh. Th e mem ory data wi ll aut omatically cycle to the next register and output
sequentially.
CSL
T
PD). Sequential read is pos-
DI
10
FIGURE 3-5: EWEN TIMING
CS
CLK
00 1 1X
DI
1X
FIGURE 3-6: READ TIMING
CS
CLK
000X
•••
X
TCSL
•••
DI
DO
DS21173E-page 6 2000 Microchip Technology Inc.
110
HIGH-Z
An
••• A0
0Dx
•••
D0 Dx
•••
D0
Dx D0
•••
93LC46A/B
3.8 WRITE
The WRITE instruction i s f oll ow ed by 8 bi ts (9 3LC4 6A)
or 16 bits (93LC46B) of data which are written into the
specified address. After the la st data bit is put on the DI
pin, the falling edge of CS initiates the self-timed autoerase and programming cycle.
The DO pin indicates the READY/BUSY
status of the
device, if CS is broug ht high a fter a mi nimum of 250 n s
low (T CSL) and before th e entire write cycle is complet e.
DO at logical “0” indicates that programming is still in
progress. DO at logical “1” indicates that the register at
the specified address has been written with the data
specified and the device is ready for another instruction.
FIGURE 3-7: WRITE TIMING
CS
CLK
0
DI
1
1An
•••
A0 Dx
3.9 Write All (WRAL)
The Write All (WRAL) instruction will write the entire
memory array with the data specified in the command.
The WRAL cycle is completely self-timed and commences at the falling edge of the CS. Clocking of the
CLK pin is not necessary after the device has entered
the WRAL cycle. The WRAL comm and does include an
automatic ERAL cycle for the device. Therefore, the
WRAL instruction does not req uire an ERAL instruc tion
but the chip must be in the EWEN status.
The DO pin indicates the READY/BUSY
device if CS is brought high after a minimum of 250 ns
CSL).
low (T
CSL
T
D0
•••
TSV
status of the
TCZ
DO
HIGH-Z
FIGURE 3-8: WRAL TIMING
CS
CLK
0
DI
DO
Guaranteed at Vcc = 4.5V to +6.0V.
1
HIGH-Z
0
01X
•••
T
WL
BUSY
READY
TSV
HIGH-Z
TCZ
READY
HIGH-Z
BUSY
Twc
TCSL
•••
Dx
X
D0
2000 Microchip Technology Inc. DS21173E-page 7
93LC46A/B
NOTES:
DS21173E-page 8 2000 Microchip Technology Inc.
NOTES:
93LC46A/B
2000 Microchip Technology Inc. DS21173E-page 9
93LC46A/B
NOTES:
DS21173E-page 10 2000 Microchip Technology Inc.
93LC46A/B
93LC46A/B PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
93LC46A/B — /P
Sales and Support
P = Plastic DIP (300 mil Body), 8-lead
Package:
Temperature Blank = 0
Range: I =-40°C to +85°C
93LC46AT 1K Microwire Serial EEPROM (x8)
93LC46AX 1K Microwire Serial EEPROM (x8)
93LC46AXT 1K Microwire Serial EEPROM (x8)
Device:
93LC46BT 1K Microwire Serial EEPROM (x16)
93LC46BX 1K Microwire Serial EEPROM (x16)
93LC46BXT 1K Microwire Serial EEPROM (x16)
SN = Plastic SOIC (150 mil Body), 8-lead
SM = Plastic SOIC (208 mil Body), 8-lead
ST = TSSOP , 8-le ad
°C to +70°C
93LC46A 1K Microwire Serial EEPROM (x8)
Tape and Reel
in alternate pinout (SN only)
in alternate pinout, Tape and Reel (SN only)
93LC46B 1K Microwire Serial EEPROM (x16)
Tape and Reel
in alternate pinout (SN only)
in alternate pinout, Tape and Reel (SN only)
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1. Your local Microchip sales office
2. The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277
3. The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
New Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
2000 Microchip Technology Inc. DS21173E-page 11
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10/01/00
Microchip received QS-9000 quality system
certification for its worldwide headquarters,
design and wafer fabrication facilities in
Chandler and Tempe, Arizona in July 1999. The
Company’s quality system processes and
procedures are QS-9000 compliant for its
PICmicro
devices, Serial EEPROMs and microperipheral
products. In addition, Microchip’s quality
system for the design and manufacture of
development systems is ISO 9001 certified.
®
8-bit MCUs, KEELOQ
®
code hopping
All rights reserved. © 2001 Microchip Technology Incorporated. Printed in the USA. 2/01 Printed on recycled paper.
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DS21173E-page 12 2000 Microchip Technology Inc.
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