CSChip Select
CLKSerial Data Clock
DISerial Data Input
DOSerial Data Output
SSGround
V
PEProgram Enable
ORGMemory Configuration
CCPower Supply
V
Description:
The Microchip Technology Inc. 93XX86A/B/C devices
are 16K bit low-voltage serial Electrically Erasable
PROMs (EEPROM). Word-selectable devices such as
the 93XX86C are dependent upon external logic
levels driving the ORG pin to set word size. In the
SOT-23 package, the 93XX86A devices provide
dedicated 8-bit memory organization, while the
93XX86B devices provide dedicated 16-bit memory
organization. A Program Enable ( PE) pin allows th e
user to write-protect the entire memory array.
Advanced CMOS technology makes these devices
ideal for low-po wer, nonvolatile memo ry ap plicat ions.
The entire 93XX Series is available in standard
packages including 8-lead PDIP and SOIC, and
advanced packaging incl uding 8-lead MSOP, 6-lead
SOT-23, 8-lead 2x3 DFN and 8-lead TSSOP. Pb-free
(Pure Matte Sn) finish is available.
SS ......................................................................................................... -0.6V to VCC +1.0V
Storage temperature ...............................................................................................................................-65°C to +150°C
Ambient temperature with power applied................................................................................................-40°C to +125°C
ESD protection on all pins ......................................................................................................................................................≥ 4kV
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rat ing on ly and funct ional operati on of th e dev ice at those or any oth er con dit ions abov e thos e
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
TABLE 1-1:DC CHARACTERISTICS
All parameters apply over the speci fied
ranges unless otherwise noted.
Param.
No.
D1V
D2VIL1
D3VOL1
D4V
SymbolParameterMinTypMaxUnitsConditions
IH1
IH2
V
High-level input voltag e2.0
Low-level input voltage-0.3
V
IL2
Low-level output voltag e—
OL2
V
High-level output volt ag e2.4
V
OH1
OH2
D5ILIInput leakage current——±1μAVIN = VSS or VCC
D6ILOOutput leakage current——±1μAVOUT = VSS or VCC
D7CIN,
OUT
C
D8I
CC write Write current—
Pin capacitance (all inputs/
outputs)
D9ICC read Read current—
D10ICCSStandby current—
D11VPORVCC voltage detect
Note 1:This parameter is periodically sampled and not 100% tested.
2:ORG and PE pin not available on ‘A’ or ‘B’ versions.
3:Ready/Busy status must be cleared from DO, see Section 3.4 “Data Out (DO)”.
Industrial (I): TA = -40°C to +85°C, VCC = +1.8V to 5.5V
Automotive (E): T
TABLE 1-4:INSTRUCTION SET FOR X 8 ORGANIZATION (93XX86A OR 93XX86C WITH ORG = 0)
InstructionSBOpcodeAddressData InData Out
READ110A10A9A8A7A6A5A4A3A2A1A0—D7-D022
EWEN1001 1X X XX XXXXX—High-Z 14
ERASE111A10A9A8A7A6A5A4A3A2A1A0—(RDY/BSY
ERAL1001 0X X XX XXXXX—(RDY/BSY
WRITE101A10A9A8A7A6A5A4A3A2A1A0 D7-D0 (RDY/BSY
WRAL1000 1X X XX XXXXX D7-D0(RDY/BSY
EWDS1000 0X X XX XXXXX—High-Z 14
When the ORG pin (93XX86C) is connected to VCC,
the (x16) organization is selected. When it is co nnected
to ground, the (x8) organization is selected. Instructions, addresses and write dat a are cl oc ke d into the DI
pin on the rising edge of the clock (CLK). Th e DO pin is
normally he ld in a High-Z stat e except when read ing
data from the device, or when checking the Ready/
status during a programming operation. The
Busy
Ready/Busy
Write operation by polli ng the DO pi n; DO low indicate s
that programming is still in progress, while DO high
indicates the device is ready. DO will enter the High-Z
state on the falling edge of CS.
2.1Start Condition
The Start bit is detected by the device if CS and DI are
both high with respect to the positive edge of CLK for
the first time.
Before a Start condition is detected, CS, CLK and DI
may change in any combination (except to that of a
Start condition), without resulting in any device
operation (Read, Write, Erase, EWEN, EWDS, ERAL
or WRAL). As soon as CS is high, the device is no
longer in Standby mode.
An instruction following a Start condition will only be
executed if the requi red opcode, address and data bits
for any particular instruction are clocked in.
Note:When preparing to transm it an instruction,
status can be verified during an Erase/
either the CLK or DI signal levels must be
at a logic low as CS is toggled active high.
2.2Data In/Data Out (DI/DO)
It is possible to connect the Data In and Data Out pins
together. However, with this configuration it is possible
for a “bus conflict” to occur during the “dummy zero”
that precedes the read operation, if A0 is a logic high
level. Under such a condition the voltage level seen at
Data Out i s undefined a nd will d epend upon the relativ e
impedances of Data Out and the signal source driving
A0. The hi gher the current s ourcing capabilit y of the
driver, the higher the voltage at the Data Out pin. In
order to limit this current, a resistor should be
connected between DI and DO.
2.3Data Protection
All modes of operation ar e inhibited when VCC is below
a typical voltage of 1.5V for ‘93AA’ and ‘93LC’ devices
or 3.8V for ‘93C’ devices.
The EWEN and EWDS commands give additional
protection against accidentally programming during
normal operation.
Note:For added protection, an EWDS
command should be performed after
every write operation and an external 10
kΩ pull-down protection res istor sho uld be
added to the CS pin.
After power-up the device is automatically in the EWD S
mode. Therefore, an EWEN instruction must be
performed before the initial ERASE or WRITE instruction
can be executed.
Note:T o preven t accident al writes to the array in
the 93XX86C devices, set the PE pin to a
logic low.
The ERASE instruction forces all data bits of the
specified address to the logical ‘1’ state. The rising
edge of CLK before the last address bit initiates the
write cycle.
FIGURE 2-1 :ERASE TIMI NG
CS
CLK
DI
DO
111A
High-Z
N
AN-1 AN-2
The DO pin indicates the Ready/Busy
device if CS is brought high after a minimum of 250 ns
low (TCSL). D O at logical ‘ 0’ indicates that programming
is still in progress. DO at logical ‘1’ indicates that the
register at the specified address has been erased and
the device is ready for another instruction.
Note:After the Erase cycle is complete, issuing
a St art bit and then taki ng CS lo w will c lear
the Ready/Busy s tatus from DO .
The Erase Al l (ERAL) instruction will erase the entire
memory array to the logical ‘1’ state. The ERAL cycle
is identical to the erase cycle, except for the different
opcode. The ERAL cycle is completely self-timed. The
rising edge of CLK before the last data bit initiates the
write cycle. Clocking of the CLK pin is not necessary
after the device has entered the ERAL cycle.
FIGURE 2-2 :ERAL TIMI N G
CS
CLK
DI
DO
High-Z
100 10x
The DO pin indicates the Ready/Busy
device, if CS is brough t high a fter a minimum of 250 n s
low (TCSL).
Note:After the ERAL command is complete,
issuing a Start bit and then taking CS low
will clear the Ready/Busy status from DO.
The 93XX86A/B/C powers up in the Erase/Write
Disable (EWDS) state. All programming modes must be
preceded by an Erase/W rite Enable (EWEN) instruc tion.
FIGURE 2-3:EWDS TIMING
CS
CLK
DI
10
FIGURE 2-4:EWEN TIMING
CS
000x
Once the EWEN instruction is executed, programming
remains enabled until an EWDS instruction is executed
or VCC is removed from the device.
To protect against accidental data disturbance, the
EWDS instruction c an be used to di sable all Erase/W ri te
functions and should follow all programming
operations. Execution of a READ instruction is
independent of both the EWEN and EWDS instructions.
CSL
T
•••
x
TCSL
CLK
00 1 1x
DI
1x
2.7Read
The READ instruction outputs the serial data of the
addressed memory lo cation on the DO pin. A dummy
zero bit precedes the 8-bit (If O RG pin is low or A-V e rsion
devices) or 16-bit (If ORG pin is high or B-version
devices) output string.
FIGURE 2-5 :READ TIMIN G
CS
CLK
A0
DI
110
An
•••
•••
The output data bits will toggle on the rising edge of the
CLK and are stable after the specified time delay (T
PD).
Sequential read is possible when CS is held high. The
memory data will automatically cycle to the next register
and output se qu en ti ally.
The WRITE instruction is followed by 8 bits (If ORG is
low or A-version device s) or 16 b its (If OR G pi n is hig h
or B-version devices) of data which are wr itten into th e
specified address. The self-timed auto-erase and
programming cycle is initiated by the rising edge of CLK
on the last data bit.
FIGURE 2-6 :WRITE TI MI NG
CS
CLK
0
DI
1
1An
•••
A0Dx
The DO pin indicates the Ready/Busy
status of the
device, if CS is brough t high a fter a minimum of 250 n s
low (TCSL). D O at logical ‘ 0’ indicates that programming
is still in pro gress. DO at log ical ‘1’ indicates that the
register at the specified address has been written with
the data specified and the device is ready for another
instruction.
Note:The write sequence requires a logic high
signal on the PE pin prior to the rising
edge of the last data bit.
Note:After the Write cy cle is c omplete, issuing a
Start bit and then taking CS low will clear
the Ready/Busy s tatus from DO
The Write All (WRAL) instruction will write the entire
memory array with the data specified in the command.
The self-timed auto-erase and programming cycle is
initiated by the rising edge of CLK on the last data bit.
Clocking of the CLK pin is not necessary after the
device has entered the WRAL cycle. The WRAL
command does include an automatic ERAL cycle for
the device. Therefore, the WRAL instruction does not
require an ERAL instructi on, but the chip must b e in th e
EWEN status.
FIGURE 2-7 :WRAL TIMI N G
CS
CLK
The DO pin indicates the Ready/Busy
status of the
device if CS is brought high after a minimum of 250 ns
low (TCSL).
Note:The write sequence requires a logic high
signal on the PE pin prior to the rising
edge of the last data bit.
Note:After the Write All cycle is complete,
issuing a Start bit and then taking CS low
will clear the Ready/Busy
A high level sel ects the device; a low lev el deselects
the device and fo rces it into S t andby mo de. Howev er , a
programming cycle wh ic h is al ready in progress will be
completed, regardless of the Chip Select (CS) input
signal. If CS is brou gh t l ow duri ng a p rogram cycle, the
device will go into Standby mode as soon as the
programming cycle is com pleted.
CS must be low for 250 ns minimum (T
consecutive instructions. If CS is low, the internal
control logic is held in a Reset status.
CSL) between
3.2Serial Clock (CLK)
The Serial Clock is used to synchronize the communication between a master device and the 93XX series
device. Opcodes, address and data bits are clocked in
on the positive edge of C LK. Dat a bit s are also c locke d
out on the positive edge of CLK.
CLK can be stopped anywhere in the transmission
sequence (at high or low level) and can be continued
anytime with respect to clock high time (T
clock low time (T
freedom in preparing opcode, address and data.
CLK is a “don't care” if CS is l ow (devic e desele cted). If
CS is high, but the Start condition has not been
detected (D I = 0), any number of clock cycles can be
received by the device without changing its status (i.e.,
waiting for a Start condition).
CLK cycles are not required during the self-timed write
(i.e., auto erase/write) cycle.
After detection of a Sta rt condition t he specified numb er
of clock cycl es (respectivel y low-to-high tr ansitions of
CLK) must be provided. These clock cycles are
required to clock in all required opcode, address and
data bits b efo re a n in struction is executed. CLK an d DI
then become “don't care” i npu ts waiting for a new Start
condition to be detected.
CKL). This gives the controlling master
CKH) and
3.3Data In (DI)
Data In (DI) is used to clock in a Start bit, opcode,
address and data, synchronously with the CLK input.
3.4Data Out (DO)
Data Out (DO) is use d in the Read m ode to outpu t data
synchronously with the CLK input (T
positive edge of CLK).
This pin also provides Ready/Busy
during erase and write cycles. Ready/Busy
information is available on the DO pin if CS is brought
high after being low for minimum Chip Select low time
CSL), and an erase or write operation has been
(T
initiated.
The Status signal is not available on DO if CS is held
low during the entire erase or write cycle. In this case,
DO is in the High-Z mode. If st atus is check ed after th e
erase/write cycle, the data line will be high to indicate
the device is ready.
Note:After a programming cycle is complete,
issuing a Start bit and then taking CS low
will clear the Ready/Busy status from DO.
PD after the
status inf ormation
status
3.5Organization (ORG)
When the ORG pin i s connected to VCC or Logic HI, th e
(x16) memory organiza tion is sel ected. Whe n the ORG
pin is tied to V
organization is selected. For proper operation, ORG
must be tied to a valid logic level.
93XX86A devices are always x8 organization and
93XX86B devices are always x16 organization.
Number of Pins
Pitch
Top to Seating PlaneA.140.155.1703.563.944.32
Molded Package ThicknessA2.115.130.1452.923.303.68
Base to Seating PlaneA1.0150.38
Shoulder to Shoulder WidthE.300.313.3257.627.948.26
Molded Package WidthE1.240.250.2606.106.356.60
Overall LengthD.360.373.3859.149.469.78
Tip to Seating PlaneL.125.130.1353.183.303.43
Lead Thickness
Upper Lead WidthB1.045.058.0701.141.461.78
Lower Lead WidthB.014.018.0220.360.460.56
Overall Row Spacing§eB.310.370.4307.879.4010.92
Mold Draft Angle Top
Mold Draft Angle Bottom
* Controlling Parameter
§ Significant Characteristic
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-001
Drawing No. C04-018
8-Lead Plastic Small Outline (SN) – Narrow, 150 mil (SOIC)
E
E1
p
D
2
B
Number of Pins
Pitch
Standoff §
Foot Angle
Lead Thickness
Mold Draft Angle Top
Mold Draft Angle Bottom
* Controlling Parameter
§ Significant Characteristic
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-012
Drawing No. C04-057
8-Lead Plastic Thin Shrink Small Outline (ST) – 4.4 mm (TSSOP)
E
E1
p
D
2
n
B
1
A
c
A1
φ
β
Units
A1
n
p
φ
c
α
β
048048
Number of Pins
Pitch
Standoff §
Foot Angle
Lead Thickne ss
Mold Draft Angle Top
Mold Draft Angle Bottom
* Controlling Parameter
§ Significant Characteristic
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.005” (0.127mm) per side.
JEDEC Equivalent: MO-153
Drawing No. C04-086
Microchip provides onlin e support v ia our W WW site at
www.m ic roc hi p.c om . Thi s web si te i s us ed as a m ean s
to make files and information easily available to
customers. Accessible by using your favorite Internet
browser, the web site contains the following
information:
• Product Support – Data sheets and errata,
application notes and sample programs, design
resources, user’s guides and hardware support
documents, lat est softwa re releases and archived
software
• General Technical Support – Frequently Asked
Questions (FAQ), technical support requests,
online discussion groups, Microchip consultan t
program member listing
• Business of Microchip – Product selector and
ordering guides, latest Microchip press releases,
listing of s eminars and events, listings of
Microchip sales offices, distributors and factory
representatives
CUSTOMER CHANGE NOTIFICATION
SERVICE
CUSTOMER SUPPORT
Users of Microchip products can receive assistance
through several channels:
• Distributor or Representative
• Local Sal es Office
• Field Application Engineer (FAE)
• Technical Support
• Development Systems Information Line
Customers should contact their distributor,
representative or field application engineer (FAE) for
support. Local sales offices are also available to help
customers. A listing of sales offices and locations is
included in the back of this document.
T echnic al support is avail able throug h the web si te
at: http://support.microchip.com
Microchip’s customer notification service helps keep
customers current on Microchip products. Subscribers
will receive e-mail notification whenever there are
changes, updates, revisions or errata related to a
specified produ ct family or develo pment tool of inte rest.
To register, access the Microchip web site at
www.microchip.com, click on Customer Change
Notification and follow the registration instructions.
It is our intentio n to pro vi de you with the best documentation possible to ens ure suc c es sfu l u se of y ou r M ic roc hip product. If you wish to provid e your c omment s on org anizatio n, clarity, subject matter, a nd ways i n whic h our doc umenta tion
can better serve you, please FAX your comments to the Technical Publications Manager at (480) 792-4150.
Please list the following information, and use this outline to provide us with your comments about this document.
To:
RE:Reader Response
From:
Application (optional):
Would you like a reply? Y N
Device: Literature Number:
Questions:
1. What are the best features of this document?
2. How does this document meet your hardware and software development needs?
3. Do you find the organization of this document easy to follow? If not, why?
Technical Publications Manager
Name
Company
Address
City / State / ZIP / Country
Telephone: (_______) _________ - _________
Total Pages Sent ________
FAX: (______) _________ - _________
DS21797G93AA86A/B/C, 93LC86A/B/C, 93C86A/B/C
4. What additions to the document do you think would enhance the structure and subject?
5. What deletions from the document could be made without affecting the overall usefulness?
6. Is there any incorrect or misleading information (what and where)?
Note 1: Most products manufactured after January 2005 will have a Matte Tin (Pb-free) finish. Most products manufactured
before January 2005 will have a finish of approximately 63% Sn and 37% Pb (Sn/Pb).
Please visit www.microchip.com for the latest information on Pb-free conversion, including conversion date codes.
Sales and Support
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences
and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of
the following:
1.Your local Microchip sales office
2.The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277
3.The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
New Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
Note the following details of the code protection feature on Microchip devices:
•Microchip products meet the specification contained in their particular Microchip Data Sheet.
•Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•Microchip is willing to work with the customer who is concerned about the integrity of their code.
•Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are com mitted to continuously improving the code protect ion f eatures of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digit al Mill ennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED,
WRITTEN OR ORAL, STATUTORY OR OTHERWISE,
RELATED TO THE INFORMATION, INCLUDING BUT NOT
LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE,
MERCHANTABILITY OR FITNESS FOR PURPOSE.
Microchip disclaims all liability arising from this information and
its use. Use of M icrochip’s prod ucts as critical components in
life support systems is not authorized except with express
written approval by Microchip. No licenses are conveyed,
implicitly or otherwise, under any Microchip intellectual property
rights.
Trademarks
The Microchip name and logo, the Microchip logo, Accuron,
dsPIC, K
EELOQ, microID, MPLAB, PIC, PICmicro, PICSTART,
PRO MATE, PowerSmart, rfPIC, and SmartShunt are
registered trademarks of Microchip Technology Incorporated
in the U.S.A. and other countries.
AmpLab, FilterLab, Migratable Memory, MXDEV, MXLAB,
PICMASTER, SEEVAL, SmartSensor and The Embedded
Control Solutions Company are registered trademarks of
Microchip Technology Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, dsPICDEM,
dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR,
FanSense, FlexROM, fuzzyLAB, In-Circuit Serial
Programming, ICSP, ICEPIC, Linear Active Thermistor,
MPASM, MPLIB, MPLI NK, MPSIM, PICkit , PICDEM,
PICDEM.net, PICLAB, PICtail, PowerCal, PowerInfo,
PowerMate, PowerTool, Real ICE, rfLAB, rfPICDEM, Select
Mode, Smart Serial, SmartTel, Total Endurance, UNI/O,
WiperLock and Zena are trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip T echnology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
Microchip received ISO/TS-16949:2002 quality system certification for
its worldwide headquarters, design and wafer fabrication facilities in
Chandler and Tempe, Arizona and Mountain View, California in
October 2003. The Company’s quality system processes and
procedures are for its PICmicro
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.