MICROCHIP 93AA76, 93AA86 Technical data

Not recommended for new designs –
Please use 93AA76C or 93AA86C.

93AA76/86

8K/16K 1.8V Microwire Serial EEPROM

Features:

• Single supply operation down to 1.8V

• Low-power CMOS technology:

- 1 mA active current typical

-5 µA standby current (typical) at 3.0V

• ORG pin selectable memory configuration:

- 1024 x 8 or 512 x 16-bit organization
(93AA76)

- 2048 x 8 or 1024 x 16-bit organization
(93AA86)

• Self-timed erase and write cycles

• Automatic ERAL before WRAL

• Power on/off data protection circuitry

• Industry standard 3-wire serial I/O

• Device status signal during erase/write cycles

• Sequential read function

• 1,000,000 erase/write cycles ensured

• Data retention > 200 years

• 8-pin PDIP/SOIC package

• Temperature ranges available:

- Commercial (C): 0°C to +70°C

Description:

Package Types

PDIP Package

CS

CLK

DI

DO

SOIC Package

CS

CLK

DI

DO

Block Diagram

V

CC VSS

93AA76/86

1
2

3
4

1
2

3
4

8

CC

V

7

PE

6

ORG

5

SS

V

93AA76/86

8

VCC

7

PE

6

ORG

SS

V

5

The Microchip Technology Inc. 93AA76/86 are 8K and
16K low voltage serial Electrically Erasable PROMs.
The device memory is configured as x8 or x16 bits
depending on the ORG pin setup. Advanced CMOS
technology makes these devices ideal for low power
nonvolatile memory applications. These devices also
have a Progr am Enable (PE) pin to allow t he user to
write-protect the entire contents of the memory array.
The 93AA76/86 is ava ilable in st andard 8-pi n PDIP and
8-pin surface mount SOIC packages.

PE
CS

CLK

DI

Memory

Array

Data

Register

Mode

Decode

Logic

Clock

Generator

Address

Decoder

Address
Counter

Output

Buffer

DO

 2004 Microchip Technology Inc. DS21130E-page 1

93AA76/86

1.0 ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings

VCC.............................................................................................................................................................................7.0V

All inputs and outputs w.r.t. V

Storage temperature ...............................................................................................................................-65°C to +150°C

Ambient temperature with power applied................................................................................................-40°C to +125°C

Soldering temperature of leads (10 seconds).......................................................................................................+300°C

ESD protection on all pins..........................................................................................................................................4 kV

† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stres s ratin g only and func tional operati on of the devic e at thes e or any other co nditio ns abov e thos e
indicated in the operational listings of this specification is not implied. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.

(†)

SS ........................................................................................................-0.6V to Vcc + 1.0V

1.1 AC Test Conditions

AC Waveform:

VLO = 2.0V
VHI = Vcc - 0.2V (Note 1)

HI = 4.0V for (Note 2)

V

Timing Measurement Reference Level:

Input 0.5 V
Output 0.5 VCC

Note 1: For VCC < 4.0V

2: For V

CC > 4.0V

CC

DS21130E-page 2  2004 Microchip Technology Inc.

93AA76/86

TABLE 1-1: DC CHARACTERISTICS

Applicable over recommended operating ranges shown below unless otherwise noted:

DC CHARACTERISTICS

Parameter Symbol Min. Max. Units Conditions

High-level input voltage V

Low-level input voltage V

Low-level output voltage VOL1 —0.4VIOL = 2.1 mA; VCC = 4.5V

High-level output voltage VOH1 2.4 — V IOH = -400 µA; VCC = 4.5V

Input leakage current I
Output leakage current ILO -10 10 µAVOUT = 0.1V to VCC
Pin capacitance

(all inputs/outpu t s)
Operating current ICC write — 3 mA VCC = 5.5V

Standby current ICCS —10030µAµACLK = CS = 0V; VCC = 5.5V

Note 1: This parameter is periodically sampled and not 100% tested.

VCC = +1.8V to +6.0V
Commercial (C): T

IH1 2.0 VCC + 1 V VCC ≥ 2.7V

A = 0°C to +70°C

VIH2 0.7 VCC VCC + 1 V VCC < 2.7V

IL1 -0.3 0.8 V VCC ≥ 2.7V

VIL2 -0.3 0.2 VCC VVCC < 2.7V

OL2 —0.2VIOL =100 µA; VCC = VCC Min.

V

VOH2 VCC-0.2 — V IOH = -100 µA; VCC = VCC Min.

LI -10 10 µAVIN = 0.1V to VCC

CINT —7pF (Note 1)

T

A = +25°C, FCLK = 1 MHz

ICC read — 1

500

mAµAFCLK = 3 MHz; VCC = 5.5V

F

CLK = 1 MHz; VCC = 3.0V

CLK = CS = 0V; V
DI = PE = V

CC = 3.0V

SS

ORG = VSS or VCC

 2004 Microchip Technology Inc. DS21130E-page 3

93AA76/86

TABLE 1-2: AC CHARACTERISTICS

Applicable over recommended operating ranges shown below unless otherwise noted:

AC CHARACTERISTICS

Parameter Symbol Min. Max. Units Conditions

VCC = +1.8V to +6.0V
Commercial (C): T

A = 0°C to +70°C

Clock frequency F

Clock high time TCKH 200

Clock low time T

Chip select set up time T

CLK —3

2
1

—ns
300
500

CKL 100

—ns
200
500

CSS 50

—ns
100
250

MHz
MHz

Mhz

ns
ns

ns
ns

ns
ns

4.5V ≤ VCC ≤ 6.0 V

2.5V ≤ V

1.8V ≤ V

CC ≤ 4.5V

CC < 2.5V

4.5V ≥ VCC ≤ 6.0V

2.5V ≤ V

1.8V ≤ V

4.5V ≤ V

2.5V ≤ V

1.8V ≤ V

CC < 4.5V
CC < 2.5V

CC ≤ 6.0V
CC < 4.5V

CC < 2.5V

4.5V ≤ VCC ≤ 6.0V, Relative to CLK

2.5V ≤ V

1.8V ≤ V

CC < 4.5V, Relative to CLK
CC < 2.5V, Relative to CLK

Chip select hol d time TCSH 0 — ns 1.8V ≤ VCC ≤ 6.0V
Chip select low ti me T
Data input setup time T

Data input hold time T

Data output delay time TPD —100

CSL 250 — ns 1.8V ≤ VCC ≤ 6.0V, Relative to CLK

DIS 50

100
250

DIH 50

100
250

—ns

ns
ns

—ns

ns
ns

ns
250
500

ns

ns

4.5V ≤ V

2.5V ≤ V

1.8V ≤ V

4.5V ≤ VCC ≤ 6.0V, Relative to CLK

2.5V ≤ V

1.8V ≤ V

4.5V ≤ VCC ≤ 6.0V, CL = 100 pF

2.5V ≤ V

1.8V ≤ V

CC

≤ 6.0V, Relative to CLK

CC <4.5V, Relative to CLK
CC < 2.5V, Relative to CLK

CC < 4.5V, Relative to CLK
CC < 2.5V, Relative to CLK

CC < 4.5V, CL = 100 pF
CC < 2.5V, CL = 100 pF

Data output disable time T

CZ —100

500

Status valid time Tsv — 200

300
500

Program cycle time T

WC — 5 ms Erase/Write mode

EC —15msERAL mode

T

ns

ns

ns

ns

ns

4.5V ≤ VCC ≤ 5.5V (Note 1)

1.8V ≤ V

4.5V ≥ V

2.5V ≤ V

1.8V ≤ V

CC < 4.5V (Note 1)
CC ≤ 6.0V, CL = 100 pF

CC < 4.5V, CL = 100 pF
CC < 2.5V, CL = 100 pF

TWL — 30 ms WRAL mode

Endurance — 1M — cycles 25°C, V

CC = 5.0V, Block mode (Note 2)

Note 1: This parameter is periodically sampled and not 100% tested.

2: This parameter is not tested but ensured by char acterization. For endurance estimates in a specific

application, please con sult the Total Endurance

™

Model which can be obta ined from Microc hip’s we b site

at: www.microchip.com

DS21130E-page 4  2004 Microchip Technology Inc.

93AA76/86

TABLE 1-3: INSTRUCTION SET FOR 93AA76: ORG = 1 (X16 ORGANIZATION)

Instruction SB Opcode Address Data In Data Out Req. CLK Cycles

READ 1 10 X A8 A7 A6 A5 A4 A3 A2 A1 A0 — D15 - D0 29
EWEN 1 00 1 1 X X X X X X X X — High-Z 13
ERASE 1 11 X A8 A7 A6 A5 A4 A3 A2 A1 A0 — (RDY/BSY) 13
ERAL 1 00 1 0 X X X X X X X X — (RDY/BSY) 13
WRITE 1 01 X A8 A7 A6 A5 A4 A3 A2 A1 A0 D15 - D0 (RDY/BSY) 29
WRAL 1 00 0 1 X X X X X X X X D15 - D0 (RDY/BSY) 29
EWDS 1 00 0 0 X X X X X X X X — High-Z 13

TABLE 1-4: INSTRUCTION SET FOR 93AA76: ORG = 0 (X8 ORGANIZATION)

Instruction SB Opcode Address Data In Data Out

READ 1 10 X A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 — D7 - D0 22
EWEN 1 00 1 1 X X X X X X X X — High-Z 14
ERASE 1 11 X A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 — (RDY/BSY) 14
ERAL 1 00 1 0 X X X X X X X X — (RDY/BSY) 14
WRITE 1 01 X A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 D7 - D0 (RDY/BSY) 22
WRAL 1 00 0 1 X X X X X X X X D7 - D0 (RDY/BSY) 22
EWDS 1 00 0 0 X X X X X X X X — High-Z 14

Req. CLK

Cycles

TABLE 1-5: INSTRUCTION SET FOR 93AA86: ORG = 1 (X16 ORGANIZATION)

Instruction SB Opcode Address Data In Data Out Req. CLK Cycles

READ 1 10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 — D15 - D0 29
EWEN 1 00 1 1 X X X X X X X X — High-Z 13
ERASE 1 11 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 — (RDY/BSY) 13
ERAL 1 00 1 0 X X X X X X X X — (RDY/BSY) 13
WRITE 1 01 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 D15 - D0 (RDY/BSY) 29
WRAL 1 00 0 1 X X X X X X X X D15 - D0 (RDY/BSY) 29
EWDS 1 00 0 0 X X X X X X X X — High-Z 13

TABLE 1-6: INSTRUCTION SET FOR 93AA86: ORG = 0 (X8 ORGANIZATION)

Instruction SB Opco de Address Data In Data Out Req. CLK Cycles

READ 1 10 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 — D7 - D0 22
EWEN 1 00 1 1 X X X X X X X X — High-Z 14
ERASE 1 11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 — (RDY/BSY) 14
ERAL 1 00 1 0 X X X X X X X X — (RDY/BSY) 14
WRITE 1 01 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 D7 - D0 (RDY/BSY) 22
WRAL 1 00 0 1 X X X X X X X X D7 - D0 (RDY/BSY) 22
EWDS 1 00 0 0 X X X X X X X X — High-Z 14

 2004 Microchip Technology Inc. DS21130E-page 5

93AA76/86

2.0 PRINCIPLES OF OPERATION

When the ORG pin is connected to VCC, the x16
organization is selected. When it is connected to ground,
the x8 organization is selected. Instructions, addresses
and write data are clocked into the DI pin on the rising
edge of the clock (CLK). The DO pin is normally held in
a high-Z state except when reading data from the
device, or when checking the Ready/Busy
a programming operation. The Ready/Busy
be verified during an erase/write operation by polling the
DO pin; DO low indicates that programming is still in
progress, while DO high indicates the device is ready.
The DO will enter the high-impedance state on the falling
edge of the CS.

2.1 Start Condition

The Start bit is detected by the device if CS and DI are
both high with respect to the positive edge of CLK for
the first time.

Before a Start condition is detected, CS, CLK and DI
may change in any combination (except to that of a
Start condition), without resulting in any device opera­tion (Read, Write, Erase, EWEN, EWDS, ERAL and
WRAL). As soon as CS is high, th e de vic e is no long er
in the Standby mode.

An instruction following a Start condition will only be
executed if the required amount of opcode, address
and data bits for any particular instruction are clocked
in.

After exec utio n of a n ins truct io n (i. e., clock in or out of
the last required address or data bit) CLK and DI
become “don't care” bits until a new Start condition is
detected.

status during

status can

2.3 Erase/Write Enable and Disable
(EWEN, EWDS)

The 93AA76/86 powers up in the Erase/Write Disable
(EWDS) state. All programming modes must be
preceded by an Erase/Write Enable (EWEN) instruction.
Once the EWEN instruction is executed, programming
remains enabled until an EWDS instruction is executed

CC is removed from the device. To protect against

or V
accidental data disturb, the EWDS instruction can be
used to disable all erase/write functions and should
follow all programming operati ons. Execution of a READ
instruction is independent of both the EWEN and EWDS
instructions.

2.4 Data Protection

During power-up, all programming modes of operation
are inhibited until V

1.4V. During power-down, the source data protection

circuitry acts to inhibit all programming modes w hen

CC has fallen below 1.4V.

V
The EWEN and EWDS commands give additional

protection against accidentally programming during
normal operation.

After power-up, the device is automatically in the
EWDS mode. Therefore, an EWEN instruction must be
performed before any ERASE or WRITE instruction can
be executed.

CC has reache d a leve l greate r than

2.2 DI/DO

It is possible to connect the Data In and Data Out pins
together. However, with this configuration it is possible
for a “bus conflict” to occur during the “dummy zero”
that precedes the read operation, if A0 is a logic high
level. Under such a condition the voltage level seen at
Data Out is undefine d and will depend upon the rela tive
impedances of Data Out and the signal source driving
A0. The higher the current sourcing capability of A0,
the higher the voltage at the Data Out pin.

DS21130E-page 6  2004 Microchip Technology Inc.

93AA76/86

3.0 DEVICE OPERATION

3.1 READ

The READ instruction outputs the serial data of the
addressed memory location on the DO pin. A dummy
zero bit precedes the 16-bit (x16 organization) or 8-bit
(x8 organization) ou tput s tring. T he output dat a bit s wil l
toggle on the rising edge of the CLK and are stable
after the specified time delay (T
possible when CS is held high and clock transitions
continue. The memory address pointer will automati­cally increment and output data sequentially.

3.2 ERASE

The ERASE instruction forces all data bits of the
specified address to the logical “1” state. The self-timed
programming cycle is initiated on the rising edge of
CLK as the last address bit (A0) is clocked in. At this
point, the CLK, CS and DI inputs beco me “don’t cares”.

The DO pin indicates the Ready/Busy
device if the CS is hig h. Th e R ead y/B usy
displayed on the DO pin until the next Start bit is
received as long as CS is hig h. Bringing t he CS low w ill
place the device in Standby mode and cause the DO
pin to enter the high-impedan ce state . DO at logical “0”
indicates that programming is still in progress. DO at
logical “1” indicates that the register at the specified
address has been erased and the device is ready for
another instruction.

The erase cycle takes 3 ms per word (typical).

3.3 WRITE

The WRITE instruction is followed by 16 bits (or by 8
bits) of data to be written into the specified address.
The self-timed programming cycle is initiated on the
rising edge of CLK as the last data bit (D0) is clocked
in. At this point, the CLK, CS and DI inputs become
“don’t cares”.

The DO pin indicates the Ready/Busy
device if the CS is hig h. Th e R ead y/B usy
displayed on the DO pin until the next Start bit is
received as long as CS is hig h. Bringing t he CS low w ill
place the device in Standby mode and cause the DO
pin to enter the high-impedan ce state . DO at logical “0”
indicates that programming is still in progress. DO at
logical “1” indicates that the register at the specified
address has been written and the device is ready for
another instruction.

The write cycle takes 3 ms per word (typical).

PD). Sequential read is

status of the

status will be

status of the

status will be

3.4 Erase All (ERAL)

The ERAL instruction will erase the entire memory array
to the logical “1” state. The ERAL cycle is identical to
the erase cycle except for the different opcode. The
ERAL cycle is completely self-timed and commences
on the rising edge of the l ast addre ss bit (A0). Note that
the Least Signific ant 8 or 9 address bits ar e “don’t care”
bits, depending on selection of x16 or x8 mode.
Clocking of the CLK pin is not necessary after the
device has entered the self clocking mode. The ERAL
instruction is ensured at Vcc = +4.5V to +6.0V.

The DO pin indicates the Ready/Busy
device if the CS is hig h. Th e Read y/Busy
displayed on the DO pin until the next Start bit is
received as long as C S is hig h. Bringing t he CS low wil l
place the device in Standby mode and cause the DO
pin to enter the high-impedanc e state . DO at logical “ 0”
indicates that programming is still in progress. DO at
logical “1” indicates that the entire device has been
erased and is ready for another instruction.

The ERAL cycle takes 15 ms maximum (8 ms typical).

status of the

status will be

3.5 Write All (WRAL)

The WRAL instruction will write the entire me mory array
with the data specified in the command. The WRAL
cycle is completely self-timed and commences on the
rising edge of the last address bit (A0). Note that the
Least Significant 8 or 9 address bits are “don’t cares”,
depending on selecti on of x1 6 or x8 m ode . Clock in g of
the CLK pin is not necessary after the device has
entered the self clocking mode. The WRAL command
does include an automatic ERAL cycle for the device.
Therefore, the WRAL instruction does not require an
ERAL instruction but the chip must be in the EWEN
status. The WRAL instruction is ensured at Vcc = +4.5V
to +6.0V.

The DO pin indicates the Ready/Busy
device if the CS is hig h. Th e Read y/Busy
displayed on the DO pin until the next Start bit is
received as long as C S is hig h. Bringing t he CS low wil l
place the device in Standby mode and cause the DO
pin to enter the high-impedanc e state . DO at logical “ 0”
indicates that programming is still in progress. DO at
logical “1” indicates that the entire device has been
written and is ready for another instruction.

The WRAL cycle takes 30 ms maximum (16 ms
typical).

status of the

status will be

 2004 Microchip Technology Inc. DS21130E-page 7

93AA76/86

FIGURE 3-1: SYNCHRONOUS DATA TIMING

IH

V

CS

VIL

DI

VIH

VIL

VIH

TDIS

CLK

VIL

VOH

DO

(Read)

(Program)

DO

VOL

VOH

VOL

The memory automatically cycles to the next register.

FIGURE 3-2: READ

TCSS TCKH TCKL

TDIH

TPD

TSV

Status Valid

TPD

TCSH

TCZ

TCZ

CS

CLK

DI

110A

DO

FIGURE 3-3: EWEN

CS

CLK

DI

ORG = V
ORG = V

11100

CC, 8 X’s
SS, 9 X’s

High-impedance

TCSL

...

N

A

0

0

XX

...

D

N

D

0

CSL

T

...

...

D

N

D

0

DS21130E-page 8  2004 Microchip Technology Inc.

FIGURE 3-4: EWDS

93AA76/86

CS

CLK

DI

10000XX

ORG = VCC, 8 X’s

ORG = V

SS, 9 X’S

FIGURE 3-5: WRITE

CS

CLK

DI

DO

101A

N

High-impedance

TCSL

...

Standby

...

A

0

...

D

N

D

0

T

CZ

Busy

Ready

TWC

FIGURE 3-6: WRAL

CS

CLK

DI

DO

ORG = VCC, 8 X’s
ORG = V

10001X

SS, 9 X’s

High-impedance

Ensured at Vcc = +4.5V to +6.0V.

...

XD

N

Standby

...

D

0

TCZ

Ready

Busy

WL

T

 2004 Microchip Technology Inc. DS21130E-page 9

93AA76/86

FIGURE 3-7: ERASE

CS

CLK

DI

DO

111 A

FIGURE 3-8: ERAL

CS

CLK

DI

DO

10010XX

N

High-impedance

High-impedance

Standby

...

...

...

A

0

TCZ

Busy

TWC

Busy

Ready

Standby

TCZ

Ready

ORG = V
ORG = V

CC, 8 X’s
SS, 9 X’s

Ensured at VCC = +4.5V to +6.0V.

EC

T

DS21130E-page 10  2004 Microchip Technology Inc.

93AA76/86

4.0 PIN DESCRIPTIONS

TABLE 4-1: PIN FUNCTION TABLE

Name Function

CS Chip Select

CLK Serial Data Clock

DI Serial Data Input

DO Serial Data Output

SS Ground

V

ORG Memory Configuration

PE Program Enable

CC Power Supply

V

4.1 Chip Select (CS)

A high level selects the device. A low level deselects
the device and fo rces it into S t andby mo de. Howev er , a
programming cycle which is already initiated will be
completed, regardless of the CS input signal. If CS is
brought low during a program cycle, the device will go
into Standby mode as soon as the programming cycle
is completed.

CS must be low for 250 ns minimum (T
consecutive instructions. If CS is low, the internal
control logic is held in a Reset status.

4.2 Serial Clock (CLK)

The Serial Clock is used to synchronize the communi­cation between a master device and the 93AA76/86.
Opcode, addre ss and data bits are clo cked in on the
positive edge of CLK. D at a bit s are also cloc ked out on
the positive edge of CLK.

CLK can be stopped anywhere in the transmission
sequence (at high or low level) and can be continued
anytime with respect to clock high time (T
clock low time (T
freedom in preparing opcode, address and data.

CLK is a “don't care” if CS is l ow (devic e desele cted). If
CS is high, but Start condition has not been detected,
any number of clock cycles can be received by the
device without chan ging i t s st atus (i.e., waiting for Start
condition).

CLK cycles are not required during the self-timed write
(i.e., auto erase/write) cycle.

CKL). This gives the controlling mas ter

CSL) between

CKH) and

After detection of a S t art condition t he specified numb er
of clock cycles (respectively low-to-high transitions of
CLK) must be provided. These clock cycles are
required to clock in all opcode, address and data bits
before an instruction is executed (see Table 1-2
through Table 1-6 for more details). CLK and DI then
become “don’t care” inputs waiting for a new Start
condition to be detected.

Note: CS must go low between consecutive

instructions, except when performing a
sequential read (Refer to Section 3.1
“READ” for more detail on sequential
reads).

4.3 Data In (DI)

Data In is used to clock in a Start bit, opcode, address
and data synchronously with the CLK input.

4.4 Data Out (DO)

Data Out is used in the Read mode to output data
synchronously with the CLK input (T
positive edge of CLK).

This pin also provides Ready/Busy
during erase and write c ycles. Ready/Bu sy
mation is available when CS is hi gh. It will be displaye d
until the next Start bit occurs as long as C S st ays high.

PD after the

status inf ormation

status infor-

4.5 Organization (ORG)

When ORG is connected to VCC, the x16 memory
organization is se lec ted . When ORG is tied to V
x8 memory organization is selected. There is an
internal pull-up resistor on the ORG pin that will select
x16 organization when left unconnected.

SS, the

4.6 Program Enable (PE)

This pin allows the user to enable or disable the ability
to write data to the memory array. If the PE pin is
floated or tied to V
If the PE pin is tied to V
inhibited. There is an intern al pull-up on thi s device that
enables programming if this pin is left floating.

CC, the device can be programmed.

SS, programming will be

 2004 Microchip Technology Inc. DS21130E-page 11

93AA76/86

5.0 PACKAGING INFORMATION

5.1 Package Marking Information

8-Lead PDIP

XXXXXXXX

XXXXXNNN

YYWW

8-Lead SOIC (.150”)

XXXXXXXX

XXXXYYWW

NNN

Example

93AA76

017

0410

Example

93AA86
/SN0410

017

DS21130E-page 12  2004 Microchip Technology Inc.

8-Lead Plastic Dual In-line (P) – 300 mil Body (PDIP)

E1

D

2

93AA76/86

n

E

β

eB

Number of Pins
Pitch
Top to Seating Plane A .140 .155 .170 3.56 3.94 4.32
Molded Package Thickness A2 .115 .130 .145 2.92 3.30 3.68
Base to Seating Plane A1 .015 0.38
Shoulder to Shoulder Width E .300 .313 .325 7.62 7.94 8.26
Molded Package Width E1 .240 .250 .260 6.10 6.35 6.60
Overall Length D .360 .373 .385 9.14 9.46 9.78
Tip to Seating Plane L .125 .130 .135 3.18 3.30 3.43
Lead Thickness
Upper Lead Width B1 .045 .058 .070 1.14 1.46 1.78
Lower Lead Width B .014 .018 .022 0.36 0.46 0.56
Overall Row Spacing § eB .310 .370 .430 7.87 9.40 10.92
Mold Draft Angle Top
Mold Draft Angle Bottom
* Controlling Parameter

§ Significant Characteristic
Notes:

Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-001
Drawing No. C04-018

Dimension Limits MIN NOM MAX MIN NOM MAX

1

α

A

c

Units INCHES* MILLIMETERS

n
p

c

α
β

.008 .012 .015 0.20 0.29 0.38

A1

B1

B

88

.100 2.54

51015 51015
51015 51015

A2

L

p

 2004 Microchip Technology Inc. DS21130E-page 13

93AA76/86

8-Lead Plastic Small Outline (SN) – Narrow, 150 mil Body (SOIC)

E

E1

p

D

2

B

Number of Pins
Pitch

Foot Angle
Lead Thickness

Mold Draft Angle Top
Mold Draft Angle Bottom

* Controlling Parameter

§ Significant Characteristic
Notes:

Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-012
Drawing No. C04-057

n

45°

c

β

n
p

φ

c

α
β

1

h

A

φ

L

048048

A1

MILLIMETERSINCHES*Units

88

1.27.050

α

A2

MAXNOMMINMAXNOMMINDimension Limits

1.751.551.35.069.061.053AOverall Height

1.551.421.32.061.056.052A2Molded Package Thickness

0.250.180.10.010.007.004A1Standoff §

6.206.025.79.244.237.228EOverall Width

3.993.913.71.157.154.146E1Molded Package Width

5.004.904.80.197.193.189DOverall Length

0.510.380.25.020.015.010hChamfer Distance

0.760.620.48.030.025.019LFoot Length

0.250.230.20.010.009.008

0.510.420.33.020.017.013BLead Width
1512015120
1512015120

DS21130E-page 14  2004 Microchip Technology Inc.

APPENDIX A: REVISION HISTORY

Revision E

Added note to page 1 header (Not recommended for
new designs).

Added Section 5.0: Package Marking Information.
Added On-line Support page.
Updated document format.

93AA76/86

 2004 Microchip Technology Inc. DS21130E-page 15

93AA76/86

NOTES:

DS21130E-page 16  2004 Microchip Technology Inc.

93AA76/86

ON-LINE SUPPORT

Microchip provides on-line support on the Microchip
World Wide Web site.

The web site is used b y Mic rochip as a me ans to m ake
files and information easily available to customers. To
view the site, the use r must have access to the Intern et
and a web browser, such as Netscape
Internet Explorer. Files are also available for FTP
download from our FTP site.

Connecting to the Microchip Internet
Web Site

The Microchip web site is available at the following
URL:

www.microchip.com

The file transfer site is available by using an FTP
service to connect to:

ftp://ftp.microchip.com

The web site and file transfer site provide a variety of
services. Users may download files for the latest
Development Tools, Data Sheets, Application Notes,
User's Guides, Articles and Sample Programs. A vari­ety of Micr ochip specific bu siness informatio n is also
available, including listings of Microchip sales offices,
distributors and factory representatives. Other data
available for consideration is:

• Latest Microchip Press Releases

• Technical Support Section with Frequently Asked
Questions

• Design Tips

• Device Errata

• Job Postings

• Microchip Consultant Program Member Listing

• Links to other useful web sites related to
Microchip Products

• Conferences for p roducts, D evelopment Systems,
technical information and more

• Listing of seminars and events

®

or Microsoft

SYSTEMS INFORMATION AND UPGRADE HOT LINE

The Systems Information and Upgrade Line provides
system users a listing of the latest versions of all of
Microchip's development systems software products.

®

Plus, this line provides information on how customers
can receive the most c urrent upgrade kit s. The Hot Line
Numbers are:

1-800-755-2345 for U.S. and most of Canada, and
1-480-792-7302 for the rest of the world.

042003

 2004 Microchip Technology Inc. DS21130E-page 17

93AA76/86

READER RESPONSE

It is our intentio n to pro vi de you with the best docu mentation possib le to e ns ure successful use of y ou r M ic roc hip pro d­uct. If you wish to provid e your c omment s on org anizatio n, clarity, subject matter , a nd ways in whic h our doc umenta tion
can better serve you, please FAX your comments to the Technical Publications Manager at [phone].

Please list the following information, and use this outline to provide us with your comments about this document.

To:
RE: Reader Response
From:

Application (optional):
Would you like a reply? Y N

Device: Literature Number:
Questions:

1. What are the best features of this document?

2. How does this document meet your hardware and software development needs?

3. Do you find the organization of this document easy to follow? If not, why?

Technical Publications Manager

Name
Company

Address
City / State / ZIP / Country

Telephone: (_______) _________ - _________

Total Pages Sent ________

FAX: (______) _________ - _________

DS21130E93AA76/86

4. What additions to the document do you think would enhance the structure and subject?

5. What deletions from the document could be made without affecting the overall usefulness?

6. Is there any incorrect or misleading information (what and where)?

7. How would you improve this document?

DS21130E-page 18  2004 Microchip Technology Inc.

PRODUCT IDENTIFICATION SYSTEM

To order or ob tain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.

PART NO. X /XX XXX

93AA76/86

Device

Device 93AA76/86: Microwire Serial EEPROM

Temperature Range Blank = 0°C to +70°C

Package P = PDIP

Range

93AA76/86T: Microwire Serial EEPROM (Tape and Reel)

SN = Plastic SOIC (150) mil Body), 8-lead

PatternPackageTemperature

Sales and Support

Data Sheets

Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and
recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:

1. Your local Microchip sales office

2. The Microchip Corporate Literature Center U.S. FAX: [phone]

3. The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.

New Customer Notification System

Register on our web site (www.microchip.com/cn) to receive the most current information on our products.

 2004 Microchip Technology Inc. DS21130E-page 19

93AA76/86

NOTES:

DS21130E-page 20  2004 Microchip Technology Inc.

Note the following details of the code protection feature on Microchip devices:

• Microchip products meet the specification contained in their particular Microchip Data Sheet.

• Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.

• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.

• Microchip is willing to work with the customer who is concerned about the integrity of their code.

• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”

Code protection is constantly evolving. We at Microchip are com mitted to continuously improving the code protect ion f eatures of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digit al Mill ennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.

Information contained in this publication regarding device
applications and the like is intended through suggestion only
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
No representation or warranty is given and no liability is
assumed by Microchip Technology Incorporated with respect
to the accuracy or use of such information, or infringement of
patents or other intellectual property rights arising from such
use or otherwise. Use of Microchip’s products as critical
components in life support systems is not authorized except
with express written approval by Microchip. No licenses are
conveyed, implicitly or otherwise, under any intellectual
property rights.

Trademarks

The Microchip name and logo, the Microchip logo, Accuron,
dsPIC, K

EELOQ, microID, MPLAB, PIC, PICmicro, PICSTART,

PRO MATE, PowerSmart, rfPIC, and SmartShunt are
registered trademarks of Microchip Technology Incorporated
in the U.S.A. and other countries.

AmpLab, FilterLab, MXDEV, MXLAB, PICMASTER, SEEVAL,
SmartSensor and The Embedded Control Solutions Company
are registered trademarks of Microchip Technology
Incorporated in the U.S.A.

Analog-for-the-Digital Age, Application Maestro, dsPICDEM,
dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR,
FanSense, FlexROM, fuzzyLAB, In-Circuit Serial
Programming, ICSP, ICEPIC, Migratable Memory, MPASM,
MPLIB, MPLINK, MPSIM, PICkit, PICDEM, PICDEM.net,
PICLAB, PICtail, PowerCal, PowerInfo, PowerMate,
PowerTool, rfLAB, rfPICDEM, Select Mode, Smart Serial,
SmartTel and Total Endurance are trademarks of Microchip
Tec hnolo gy Incorporated in the U.S.A. and other countries.

SQTP is a service mark of Microchip T echnology Incorporated
in the U.S.A.

All other trademarks mentioned herein are property of their
respective companies.

© 2004, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.

Printed on recycled paper.

Microchip received ISO/TS-16949:2002 quality system certification for
its worldwide headquarters, design and wafer fabrication facilities in
Chandler and Tempe, Arizona and Mountain View, California in
October 2003. The Company’s quality system processes and
procedures are for its PICmicro
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.

®

8-bit MCUs, KEELOQ

®

code hopping

 2004 Microchip Technology Inc. DS21130E-page 21

WORLDWIDE SALES AND SERVICE

AMERICAS

Corporate Office

2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: [phone]
Fax: [phone]
Technical Support: 480-792-7627
Web Address: www.microchip.com

Atlanta

3780 Mansell Road, Suite 130
Alpharetta, GA 30022
Tel: [phone]
Fax: [phone]

Boston

2 Lan Drive, Suite 120
Westford, MA 01886
Tel: [phone]
Fax: [phone]

Chicago

333 Pierce Road, Suite 180
Itasca, IL 60143
Tel: [phone]
Fax: [phone]

Dallas

4570 Westgrove Drive, Suite 160
Addison, TX 75001
Tel: [phone]
Fax: [phone]

Detroit

Tri-Atria Office Building
32255 Northwestern Highway, Suite 190
Farmington Hills, MI 48334
Tel: [phone]
Fax: [phone]

Kokomo

2767 S. Albright Road
Kokomo, IN 46902
Tel: [phone]
Fax: [phone]

Los Angeles

18201 Von Karman, Suite 1090
Irvine, CA 92612
Tel: [phone]
Fax: [phone]

San Jose

1300 Terra Bella Avenue
Mountain View, CA 94043
Tel: [phone]
Fax: [phone]

Toronto

6285 Northam Drive, Suite 108
Mississauga, Ontario L4V 1X5, Cana da
Tel: [phone]
Fax: [phone]

ASIA/PACIFIC

Australia

Suite 22, 41 Rawson Street
Epping 2121, NSW
Australia
Tel: [phone]
Fax: [phone]

China - Beijing

Unit 706B
Wan Tai Bei Hai Bldg.
No. 6 Chaoyangmen Bei Str.
Beijing, 100027, China
Tel: [phone]
Fax: [phone]

China - Chengdu

Rm. 2401-2402, 24th Floor,
Ming Xing Financial Tower
No. 88 TIDU Street
Chengdu 610016, China
Tel: [phone]
Fax: [phone]

China - Fuzhou

Unit 28F, World Trade Plaza
No. 71 Wusi Road
Fuzhou 350001, China
Tel: [phone]
Fax: [phone]

China - Hong Kong SAR

Unit 901-6, Tower 2, Metroplaza
223 Hing Fong Road
Kwai Fong, N.T., Hong Kong
Tel: [phone]
Fax: [phone]

China - Shanghai

Room 701, Bldg. B
Far East International Plaza
No. 317 Xian Xia Road
Shanghai, 200051
Tel: [phone]
Fax: [phone]

China - Shenzhen

Rm. 1812, 18/F, Building A, United Plaza
No. 5022 Binhe Road, Futian District
Shenzhen 518033, China
Tel: [phone]
Fax: [phone]

China - Shunde

Room 401, Hongjian Building, No. 2
Fengxiangnan Road, Ronggui Town, Shunde
District, Foshan City, Guangdong 528303, China
Tel: [phone] Fax: [phone]

China - Qingdao

Rm. B505A, Fullhope Plaza,
No. 12 Hong Kong Central Rd.
Qingdao 266071, China
Tel: [phone] Fax: [phone]

India

Divyasree Chambers
1 Floor, Wing A (A3/A4)
No. 11, O’Shaugnessey Road
Bangalore, 560 025, India
Tel: [phone] Fax: [phone]

Japan

Benex S-1 6F
3-18-20, Shinyokohama
Kohoku-Ku, Yokohama-shi
Kanagawa, 222-0033, Japan
Tel: [phone] Fax: [phone]

Korea

168-1, Youngbo Bldg. 3 Floor
Samsung-Dong, Kangnam-Ku
Seoul, Korea 135-882
Tel: [phone] Fax: [phone] or
82-2-558-5934

Singapore

200 Middle Road
#07-02 Prime Centre
Singapore, 188980
Tel: [phone] Fax: [phone]

Taiwan

Kaohsiung Branch
30F - 1 No. 8
Min Chuan 2nd Road
Kaohsiung 806, Taiwan
Tel: [phone]
Fax: [phone]

Taiwan

Taiwan Branch
11F-3, No. 207
Tung Hua North Road
Taipei, 105, Taiwan
Tel: [phone] Fax: [phone]

EUROPE

Austria

Durisolstrasse 2
A-4600 Wels
Austria
Tel: [phone]
Fax: [phone]

Denmark

Regus Business Centre
Lautrup hoj 1-3
Ballerup DK-2750 Denmark
Tel: [phone] Fax: [phone]

France

Parc d’Activite du Moulin de Massy
43 Rue du Saule Trapu
Batiment A - ler Etage
91300 Massy, France
Tel: [phone]
Fax: [phone]

Germany

Steinheilstrasse 10
D-85737 Ismaning, Germany
Tel: [phone]
Fax: [phone]

Italy

Via Quasimodo, 12
20025 Legnano (MI)
Milan, Italy
Tel: [phone]
Fax: [phone]

Netherlands

Waegenburghtplein 4
NL-5152 JR, Drunen, Netherlands
Tel: [phone]
Fax: [phone]

United Kingdom

505 Eskdale Road
Winnersh Triangle
Wokingham
Berkshir e, England RG41 5TU
Tel: [phone]
Fax: [phone]

05/28/04

DS21130E-page 22  2004 Microchip Technology Inc.