The Microchip Technology Inc. 93XX46A/B/C devices
are 1K bit low-voltage serial Electrically Erasable
PROMs (EEPROM). Word-selectable devices such as
the 93AA46C, 93LC46C or 93C46C are dependent
upon external logic levels driving the ORG pin to set
word size. For dedicated 8-bit communication, the
93AA46A, 93LC46A or 93C46A devices are available,
while the 93AA46B, 93LC46B and 93C46B devices
provide dedicated 16-bit communication. Advanced
CMOS technology makes these devices ideal for low
power, nonvolatile memory applications. The entire
93XX Series is available in standard packages includ-
)
ing 8-lead PDIP and SOIC, and advanced packaging
including 8-lead MSOP, 6-lead SOT-23, 8-lead 2x3
DFN and 8-lead TSSOP. Pb-free (Pure Matte Sn) finish
is also available.
Pin Function Table
NameFunction
CSChip Select
CLKSerial Data Clock
DISerial Data Input
DOSerial Data Output
V
SSGround
NCNo internal connection
ORGMemory Configur atio n
SS ..........................................................................................................-0.6V to VCC +1.0V
Storage temperature ...............................................................................................................................-65°C to +150°C
Ambient temperature with power applied................................................................................................-40°C to +125°C
ESD protection on all pins ......................................................................................................................................................≥ 4kV
† NOTICE:Stres ses above those listed under “Absolute Max im um Rat ing s” m ay cause permanent damage to
the device. This is a stress rating only and functional operation of the device at those or any other conditions
above those indicated in the opera tional lis tings of thi s specifica tion is not implied. Expo sure to max imum rating
conditions for extended periods may affect device reliability.
TABLE 1-1:DC CHARACTERISTICS
All parameters apply over the specified
ranges unless otherwise noted.
Param.
No.
D1V
D2VIL1
D3VOL1
D4V
SymbolParameterMinTypMaxUnitsConditions
IH1
IH2
V
High-level input voltage2.0
Low-level input voltage-0.3
V
IL2
Low-level output voltage—
OL2
V
High-lev el output voltage2.4
V
OH1
OH2
Industrial (I):T
Automotive (E): T
0.7 VCC
-0.3
—
VCC - 0.2——
D5ILIInput leakage current——±1μAVIN = VSS or VCC
D6ILOOutput leakage current——±1μAVOUT = VSS or VCC
D7CIN,
OUT
C
D8I
CC
write
Pin capacitance
——7pFVIN/VOUT = 0V (Note 1)
(all inputs/outputs)
Write current—
—
D9ICC read Read current—
—
—
D10ICCSStandby current—
—
D11VPORVCC voltage detect
—
—
Note 1: This parameter is periodically sampled and not 100% tested.
2: ORG pin not available on ‘A’ or ‘B’ versions.
3: Ready/Busy
status must be cleared from DO, see Section3.4 "Data Out (DO)".
A = -40°C to +85°C, VCC = +1.8V TO +5.5V
A = -40°C to +125°C, VCC = +2.5V TO +5.5 V
When the ORG pin (93XX46C) is connected to VCC,
the (x16) organization is selected. When it is co nnected
to ground, the (x8) organization is selected. Instructions, addresses and write dat a are cl oc ke d into the DI
pin on the rising edge of the clock (CLK). Th e DO pin is
normally he ld in a High-Z stat e except when read ing
data from the device, or when checking the Ready/
status during a programming operation. The
Busy
Ready/Busy
write operation by polli ng the DO pin; DO low ind icate s
that programming is still in progress, while DO high
indicates the device is ready. DO will enter the High-Z
state on the falling edge of CS.
2.1Start Condition
The Start bit is detected by the device if CS and DI are
both high with respect to the positive edge of CLK for
the first time.
Before a Start condition is detected, CS, CLK and DI
may change in any combination (except to that of a
Start condition), without resulting in any device
operation (Read, Write, Erase, EWEN, EWDS, ERAL
or WRAL). As soon as CS is high, the device is no
longer in Standby mode.
An instruction following a Start condition will only be
executed if the requi red opcode, address and data bits
for any particular instruction are clocked in.
Note:When preparing to transm it an i ns truc tio n,
2.2Data In/Data Out (DI/DO)
status can be verified during an erase/
either the CLK or DI signal levels must be
at a logic low as CS is toggled active high.
2.3Data Protection
All modes of operation ar e inhibited when VCC is below
a typical voltage of 1.5V for '93AA' and '93LC' devices
or 3.8V for '93C' devices.
The EWEN and EWDS commands give additional
protection against accidentally programming during
normal operation.
Note:For added protection, an EWDS
command should be performed after
every write operation and an external 10
kΩ pull-down protection res istor sho uld be
added to the CS pin.
After power-up, the device is automatically in the
EWDS mode. Therefore, an EWEN instruction must be
performed before the initial ERASE or WRITE instruction
can be executed.
Block Diagram
CCVSS
V
Address
Decoder
Address
Counter
Output
Buffer
DO
DI
ORG*
CS
Memory
Array
Data Register
Mode
Decode
Logic
It is possible to connect the Data In and Data Out pins
together. However, with this configuration it is possible
for a “bus conflict” to occur during the “dummy zero”
that precedes the read operation, if A0 is a logic high
level. Under such a condition the voltage level seen at
Data Out is undefine d and will depend upon the rela tive
impedances of Data Out and the signal source driving
A0. The higher the current sourcing capability of A0,
the higher the voltage at the Data Out pin. In order to
limit this current, a resistor should be connected
between DI and DO.
The ERASE instruction forces all data bits of the
specified address to the logical ‘1’ state. CS is brought
low following the loading of the last address bit. This
falling edge of the CS pin initiates the self-timed
The DO pin indicates the Ready/Busy
device if CS is brought high after a minimum of 250 ns
low (TCSL). D O at logical ‘ 0’ indicates that programming
is still in progress. DO at logical ‘1’ indicates that the
register at the specified address has been erased and
the device is ready for another instruction.
programming cycle , exc ept on ‘93C ’ dev ices w here th e
rising edge of CLK before the last address bit initiates
Note:After the Erase cycle is complete, issuing
the write cycle.
FIGURE 2-1 :ERASE TI MI NG FOR 9 3A A AN D 93L C D EVIC E S
T
CSL
CS
CLK
DI
DO
111A
High-Z
N
AN-1 AN-2
•••
A0
status of the
a St art bit and then taki ng CS lo w will c lear
the Ready/Busy s tatus from DO .
The Erase Al l (ERAL) instruction will erase the entire
The DO pin indicates the Ready/Busy
device, if CS is brough t high a fter a minimum of 250 n s
low (TCSL).
memory array to the logical ‘1’ state. The ERAL cycle
is identical to the erase cycle, except for the different
Note:After the ERAL command is complete,
opcode. The ERAL cycle is completely self-timed and
commences at the falling edge of the CS, except on
‘93C’ devices where the rising edge of CLK before the
last data bit initiates the write cycle. Clocking of the
VCC must be ≥ 4.5V for proper operation of ERAL.
CLK pin is not necessary after the device has entered
the ERAL cycle.
FIGURE 2-3 :ERAL TIM IN G FO R 93 AA A ND 9 3L C DE VI C ES
CSL
T
CS
CLK
DI
DO
100 10x
High-Z
•••
x
status of the
issuing a Start bit and then taking CS low
will clear the Ready/Busy status from DO.
The 93XX46A/B/C powers up in the Erase/Write Disable
(EWDS) state. All Programming modes must be
preceded by an Erase/Write Enable (EWEN) instruction.
Once the EWEN instruction is executed, programming
remains enabled until an EWDS instruction is executed or
Vcc is removed from the device.
FIGURE 2-5:EWDS TIMING
CS
CLK
DI
10
FIGURE 2-6:EWEN TIMING
CS
000x
To protect against accidental data disturbance, the EWDS
instruction can be used to disable all erase/write functions
and should follow all programming operations. Execution
of a READ instruction is independent of both the EWEN and
EWDS instructions.
CSL
T
•••
x
TCSL
CLK
00 1 1x
DI
1x
2.7Read
The READ instruction outputs the serial data of the
addressed memory lo cation on the DO pin. A dummy
zero bit precedes the 8-bit (if ORG pin is low or A-Version
devices) or 16-bit (if ORG pin is high or B-version
devices) output string.
FIGURE 2-7 :READ TIMI N G
CS
CLK
DI
110
An
•••A0
•••
The output data bits will toggle on the rising edge of the
CLK and are stable after the specified time delay (T
PD).
Sequential read is possible when CS is held high. The
memory data will automatically cycle to the next register
and output se qu en ti ally.
The WRITE i nstruction is followed by 8 bits (i f ORG is
low or A-version devices) or 16 bits (if ORG pin is high
or B-version devices) of data which are wr itten into th e
specified address. For 93AA46A/B/C and 93LC46A/B/C
devices, after the last data bit is clocked into DI, the
The DO pin indicates the Ready/Busy
device, if CS is brough t high a fter a minimum of 250 n s
low (TCSL). D O at logical ‘ 0’ indicates that programming
is still in pro gress. DO at log ical ‘1’ indicates that the
register at the specified address has been written with
the data specified and the device is ready for another
instruction.
falling edge of CS initiates the self-timed auto-erase and
programming cycle. For 93 C46A/ B/C d evices , the se lf-
Note:After the Write cy cle is c omplete, issuing a
timed auto-erase and pr ogramming cycle is initiated by
the rising edge of CLK on the last data bit.
FIGURE 2-8 :WRITE T I MI NG FOR 93AA AND 93LC DEV I CES
TCSL
CS
CLK
0
DI
DO
1
High-Z
1An
•••
A0Dx
•••
D0
status of the
Start bit and then taking CS low will clear
the Ready/Busy status from DO.
The Write All (WRAL) instruction will write the entire
The DO pin indicates the Ready/Busy
device if CS is brought high after a minimum of 250 ns
low (TCSL).
memory array with the data specified in the command.
For 93AA46A/B/C and 93LC 46A/B/C de vices , after th e
Note:After the Write All cycle is complete,
last data bit is clocked into DI, the falling edge of CS
initiates the self-timed auto-erase and programming
cycle. For 93C46A/B/C devices, the self-timed autoerase and programming cycle is initiated by the rising
VCC must be ≥ 4.5V for proper operation of WRAL.
edge of CLK on the last data bit. Clocking of the CLK
pin is not necessary after the device has entered the
WRAL cycle. The WRAL command does include an
automatic ERAL cycle for the device. Therefore, the
WRAL instruction does not require an ERAL instruction,
but the chip must be in the EWEN status.
FIGURE 2-10:WRAL TIMING FOR 93AA AND 93LC DEVICES
CS
CLK
DI
0
1
01 x
0
•••
x
Dx•••
status of the
issuing a Start bit and then taking CS low
will clear the Ready/Busy status from DO.
CS153Chip Select
CLK244Serial Clock
DI335Data In
DO416Data Out
Vss527Ground
ORG/NC6—8Organization / 93XX46C
NC7—1No Internal Connection
CC862Power Supply
V
MSOP/
TSSOP/DFN
SOT-23Rotated SOICFunction
No Internal Connection / 93XX46A/B
3.1Chip Select (CS)
A high level sel ects the device; a low lev el deselects
the device and fo rces it into S t andby mo de. Howev er , a
programming cycle wh ic h is al ready in progress will be
completed, regardless of the Chip Select (CS) input
signal. If CS is brou gh t l ow duri ng a p rogram cycle, the
device will go into Standby mode as soon as the
programming cycle is com pleted.
CS must be low for 250 ns minimum (T
consecutive instructions. If CS is low, the internal
control logic is held in a Reset status.
CSL) between
3.2Serial Clock (CLK)
The Serial Clock is used to synchronize the communication between a master device and the 93XX series
device. Opcodes, address and data bits are clocked in
on the positive edge of C LK. Dat a bit s are also c locke d
out on the positive edge of CLK.
CLK can be stopped anywhere in the transmission
sequence (at high or low level) and can be continued
anytime with respect to clock high time (T
clock low time (T
freedom in preparing opcode, address and data.
CLK is a “don't care” if CS is l ow (devic e desele cted). If
CS is high, but the Start condition has not been
detected (D I = 0), any number of clock cycles can be
received by the device without changing its status (i.e.,
waiting for a Start condition).
CLK cycles are not required during the self-timed write
(i.e., auto erase/write) cycle.
After detection of a Sta rt condition t he specified numb er
of clock cycl es (respectivel y low-to-high tr ansitions of
CLK) must be provided. These clock cycles are
required to clock in all required opcode, address and
data bits b efo re a n in struction is executed. CLK an d DI
then become “don't care” i npu ts waiting for a new Start
condition to be detected.
CKL). This gives the controlling master
CKH) and
3.3Data In (DI)
Data In (DI) is used to clock in a Start bit, opcode,
address and data synchronously with the CLK input.
3.4Data Out (DO)
Data Out (DO) is use d in the Read m ode to outpu t data
synchronously with the CLK input (T
positive edge of CLK).
This pin also provides Ready/Busy
during erase and write c ycles. Ready/Bu sy
mation is available on the DO pin if CS is brought high
after being low for minimum Chip Select low time (T
and an erase or write operation has been initiated.
The Status signal is not available on DO, if CS is held
low during the entire erase or write cycle. In this case,
DO is in the High-Z mode. If st atus is check ed after th e
erase/write cycle, the data line will be high to indicate
the device is ready.
Note:After a programming cycle is complete,
issuing a Start bit and then taking CS low
will clear the Ready/Busy status from DO.
PD after the
status inf ormation
status infor-
CSL)
3.5Organization (ORG)
When the ORG pin i s connected to VCC or Logic HI, th e
(x16) memory organiza tion is sel ected. Whe n the ORG
pin is tied to V
organization is selected. For proper operation, ORG
must be tied to a valid logic level.
93XX46A devices are always x8 organization and
93XX46B devices are always x16 organization.
Number of Pins
Pitch
Top to Seating PlaneA.140.155.1703.563.944.32
Molded Package ThicknessA2.115.130.1452.923.303.68
Base to Seating PlaneA1.0150.38
Shoulder to Shoulder WidthE.300.313.3257.627.948.26
Molded Package WidthE1.240.250.2606.106.356.60
Overall LengthD.360.373.3859.149.469.78
Tip to Seating PlaneL.125.130.1353.183.303.43
Lead Thickness
Upper Lead WidthB1.045.058.0701.141.461.78
Lower Lead WidthB.014.018.0220.360.460.56
Overall Row Spacing§eB.310.370.4307.879.4010.92
Mold Draft Angle Top
Mold Draft Angle Bottom
* Controlling Parameter
§ Significant Characteristic
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-001
Drawing No. C04-018
8-Lead Plastic Small Outline (SN) – Narrow, 150 mil (SOIC)
E
E1
p
D
2
B
Number of Pins
Pitch
Standoff §
Foot Angle
Lead Thickness
Mold Draft Angle Top
Mold Draft Angle Bottom
* Controlling Parameter
§ Significant Characteristic
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-012
Drawing No. C04-057
n
45°
c
β
n
p
A1
φ
c
α
β
1
h
A
φ
L
048048
A1
MILLIMETERSINCHES*Units
1.27.050
α
A2
MAXNOMMINMAXNOMMINDimension Limits
88
1.751.551.35.069.061.053AOverall Height
1.551.421.32.061.056.052A2Molded Packag e Thickness
8-Lead Plastic Thin Shrink Small Outline (ST) – 4.4 mm (TSSOP)
E
E1
p
D
2
n
B
1
A
c
A1
φ
β
Units
A1
n
p
φ
c
α
β
048048
Number of Pins
Pitch
Standoff §
Foot Angle
Lead Thickne ss
Mold Draft Angle Top
Mold Draft Angle Bottom
* Controlling Parameter
§ Significant Characteristic
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.005” (0.127mm) per side.
JEDEC Equivalent: MO-153
Drawing No. C04-086
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DS21749F93AA46A/B/C, 93LC46A/B/C, 93C46A/B/C
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