MICROCHIP 93AA46, 93AA56, 93AA66 Technical data
93AA46/56/66
1K/2K/4K 1.8V Microwire
FEATURES
• Single supply with programming operation down
to 1.8V
• Low power CMOS technology
- 70
µ
A typical active READ current at 1.8V
-2
µ
A typical standby current at 1.8V
• ORG pin selectable memory configuration
- 128 x 8- or 64 x 16-bit organization (93AA46)
- 256 x 8- or 128 x 16-bit organization
(93AA56)
- 512 x 8 or 256 x 16 bit organization (93AA66)
• Self-timed ERASE and WRITE cycles
(including auto-erase)
• Automatic ERAL before WRAL
• Power on/off data protection circuitry
• Industry standard 3-wire serial I/O
• Device status signal during ERASE/WRITE cycles
• Sequential READ function
• 10,000,000 ERASE/WRITE cycles guaranteed on
93AA56 and 93AA66
• 1,000,000 E/W cycles guaranteed on 93AA46
• Data retention > 200 years
• 8-pin PDIP/SOIC
(SOIC in JEDEC and EIAJ standards)
• Temperature ranges supported
- Commercial (C): 0 ° C to +70 ° C
Serial EEPROM
PACKA GE TYPES
DIP
1
CS
CLK
DI
DO
SOIC
CS
CLK
DI
DO
SOIC
NU
Vcc
CS
CLK
2
3
4
1
2
3
4
1
2
3
4
93AA66
93AA66
93AA66X
8
93AA46
93AA56
7
6
5
8
93AA46
93AA56
7
6
5
8
93AA46X
93AA56X
7
6
5
V
CC
NU
ORG
V
SS
V
NU
ORG
V
ORG
Vss
DO
DI
CC
SS
DESCRIPTION
The Microchip Technology Inc. 93AA46/56/66 are 1K,
2K and 4K low voltage serial Electrically Erasable
BLOCK DIAGRAM
V
CC VSS
PROMs. The device memory is configured as x8 or x16
bits depending on the ORG pin setup. Advanced
CMOS technology makes these devices ideal for low
power non-volatile memory applications. The 93AA
MEMORY
ARRAY
ADDRESS
DECODER
Series is available in standard 8-pin DIP and surface
mount SOIC packages. The rotated pin-out 93AA46X/
56X/66X are offered in the “SN” package only.
DATA REGISTER
DI
MODE
ORG
CS
CLK
Microwire is a registered trademark of National Semiconductor Incorporated.
1996 Microchip Technology Inc. DS20067G-page 1
DECODE
LOGIC
CLOCK
GENERATOR
ADDRESS
COUNTER
OUTPUT
BUFFER
DO
≥
93AA46/56/66
≥
µ
µ
µ A µ
µ A µ A µ
≥
1.0 ELECTRICAL CHARACTERISTICS
1.1 Maxim
V
CC
............................................................................7.0V
All inputs and outputs w.r.t. V
Storage temperature................................-65˚C to +150˚C
Ambient temp. with power applied...........-65˚C to +125˚C
Soldering temperature of leads (10 seconds)........+300˚C
ESD protection on all pins ......................................... 4 kV
*Notice: Stresses above those listed under “Maximum ratings”
may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any
other conditions above those indicated in the operational listings
of this specification is not implied. Exposure to maximum rating
conditions for extended periods may affect device reliability.
um Ratings
SS
..........-0.6V to V
CC
+1.0V
TABLE 1-1: PIN FUNCTION TABLE
Name Function
CS Chip Select
CLK Serial Data Clock
DI Serial Data Input
DO Serial Data Output
V
SS
ORG Memory Configuration
NU Not Utilized
V
CC
Ground
Power Supply
TABLE 1-2: DC AND AC ELECTRICAL CHARACTERISTICS
V
CC
= +1.8V to +5.5V Commercial (C): Tamb = 0˚C to +70˚C
Parameter Symbol Min Typ Max Units Conditions
High level input voltage V
Low level input voltage V
Low level output voltage V
High level output voltage V
Input leakage current I
Output leakage current I
Pin capacitance
(all inputs/outputs)
Operating current I
Standby current I
Clock frequency F
Clock high time T
Clock low time T
Chip select setup time T
Chip select hold time T
Chip select low time T
Data input setup time T
Data input hold time T
Data output delay time T
Data output disable time T
Status valid time T
Program cycle time T
Endurance
93AA46
93AA56/66
Note 1: This parameter is tested at Tamb = 25 ° C and F
2: This parameter is periodically sampled and not 100% tested.
3: This parameter is not tested but guaranteed by characterization. For endurance estimates in a specific appli-
cation, please consult the Total Endurance Model which can be obtained on our BBS or website.
IH
1 2.0 — V
IH
2 0.7 V
V
IL
1 -0.3 — 0.8 V V
IL
2 -0.3 — 0.2 V
V
OL
1 — — 0.4 V I
OL
2 — — 0.2 V I
V
OH
1 2.4 — — V I
OH
2V
V
LI
LO
C
IN
, C
OUT
CC
write — — 3 mA F
CC
read — —
I
CC
CC
-0.2 — — V I
—V
-10 — 10
-10 — 10
—— 7 pFV
CC
+1 V V
CC
+1 V V
CC
1
mA
500
70
CCS
100
30
2
CLK
CKH
CKL
CSS
CSH
CSL
T
T
—
—
DIS
DIH
PD
CZ
SV
WC
EC
WL
250 ns
250 ns
50 ns Relative to CLK
0 ns Relative to CLK
250 ns
100 ns Relative to CLK
100 ns Relative to CLK
4 10 ms ERASE/WRITE mode
8 15 ms ERAL mode (Vcc = 5V ± 10%)
16 30 ms WRAL mode (Vcc = 5V ± 10%)
1M
10M
—
—
CLK
2
1
MHz
MHz
400 ns CL = 100 pF
100 ns CL = 100 pF (Note 2)
500 ns CL = 100 pF
1M
10M
—
—
= 1 MHz.
CC
2.7V
CC
< 2.7V
CC
2.7V
VV
AV
AV
CC
< 2.7V
OL
= 2.1 mA; V
OL
= 100 µ A; V
OH
= -400 µ A; V
OH
= -100 µ A; V
IN
= 0.1V to V
OUT
= 0.1V to V
IN
/V
OUT
Tamb = +25˚C, F
CLK
=2 MHz; V
F
CLK
= 2 MHz; V
CLK
= 1 MHz; V
F
A
CLK
= 1 MHz; V
F
CLK = CS = 0V; V
CLK = CS = 0V; V
A
CLK = CS = 0V; V
V
CC
4.5V
CC
< 4.5V
V
25 ° C, Vcc = 5.0V, Block Mode
(Note 3)
CC
= 4.5V
CC
= 1.8V
CC
CC
CC
CC
= 0V (Note 1 & 2)
CLK
CC
=5.5V (Note 2)
CC
CC
CC
CC
CC
CC
= 4.5V
= 1.8V
= 1 MHz
= 5.5V
= 3.0V
= 1.8V
= 5.5V
= 3.0V
= 1.8V
DS20067G-page 2
1996 Microchip Technology Inc.
93AA46/56/66
TABLE 1-3: INSTRUCTION SET FOR 93AA46: ORG = 1 (X 16 ORGANIZATION)
Instruction SB Opcode Address Data In Data Out Req. CLK Cycles
READ 1 10 A5 A4 A3 A2 A1 A0 — D15 - D0 25
EWEN 1 00 1 1 X X X X — High-Z 9
ERASE 1 11 A5 A4 A3 A2 A1 A0 — (RDY/BSY
ERAL 1 00 1 0 X X X X — (RDY/BSY
WRITE 1 01 A5 A4 A3 A2 A1 A0 D15 - D0 (RDY/BSY
WRAL 1 00 0 1 X X X X D15 - D0 (RDY/BSY
EWDS 1 00 0 0 X X X X — High-Z 9
TABLE 1-4: INSTRUCTION SET FOR 93AA46: ORG = 0 (X 8 ORGANIZATION)
Instruction SB Opcode Address Data In Data Out Req. CLK Cycles
READ 1 10 A6 A5 A4 A3 A2 A1 A0 — D7 - D0 18
EWEN 1 00 1 1 X X X X X — High-Z 10
ERASE 1 11 A6 A5 A4 A3 A2 A1 A0 — (RDY/BSY
ERAL 1 00 1 0 X X X X X — (RDY/BSY
WRITE 1 01 A6 A5 A4 A3 A2 A1 A0 D7 - D0 (RDY/BSY
WRAL 1 00 0 1 X X X X X D7 - D0 (RDY/BSY
EWDS 1 00 0 0 X X X X X — High-Z 10
TABLE 1-5: INSTRUCTION SET FOR 93AA56: ORG = 1 (X 16 ORGANIZATION)
Instruction SB Opcode Address Data In Data Out Req. CLK Cycles
READ 1 10 X A6 A5 A4 A3 A2 A1 A0 — D15 - D0 27
EWEN 1 00 1 1 X X X X X X — High-Z 11
ERASE 1 11 X A6 A5 A4 A3 A2 A1 A0 — (RDY/BSY
ERAL 1 00 1 0 X X X X X X — (RDY/BSY
WRITE 1 01 X A6 A5 A4 A3 A2 A1 A0 D15 - D0 (RDY/BSY
WRAL 1 00 0 1 X X X X X X D15 - D0 (RDY/BSY
EWDS 1 00 0 0 X X X X X X — High-Z 11
TABLE 1-6: INSTRUCTION SET FOR 93AA56: ORG = 0 (X 8 ORGANIZATION)
Instruction SB Opcode Address Data In Data Out Req. CLK Cycles
READ 1 10 X A7 A6 A5 A4 A3 A2 A1 A0 — D7 - D0 20
EWEN 1 00 1 1 X X X X X X X — High-Z 12
ERASE 1 11 X A7 A6 A5 A4 A3 A2 A1 A0 — (RDY/BSY
ERAL 1 00 1 0 X X X X X X X — (RDY/BSY
WRITE 1 01 X A7 A6 A5 A4 A3 A2 A1 A0 D7 - D0 (RDY/BSY
WRAL 1 00 0 1 X X X X X X X D7 - D0 (RDY/BSY
EWDS 1 00 0 0 X X X X X X X — High-Z 12
TABLE 1-7: INSTRUCTION SET FOR 93AA66: ORG = 1 (X 16 ORGANIZATION)
Instruction SB Opcode Address Data In Data Out Req. CLK Cycles
READ 1 10 A7 A6 A5 A4 A3 A2 A1 A0 — D15 - D0 27
EWEN 1 00 1 1 X X X X X X — High-Z 11
ERASE 1 11 A7 A6 A5 A4 A3 A2 A1 A0 — (RDY/BSY
ERAL 1 00 1 0 X X X X X X — (RDY/BSY
WRITE 1 01 A7 A6 A5 A4 A3 A2 A1 A0 D15 - D0 (RDY/BSY
WRAL 1 00 0 1 X X X X X X D15 - D0 (RDY/BSY) 27
EWDS 1 00 0 0 X X X X X X — High-Z 11
TABLE 1-8: INSTRUCTION SET FOR 93AA66: ORG = 0 (X 8 ORGANIZATION)
Instruction SB Opcode Address Data In Data Out Req. CLK Cycles
READ 1 10 A8 A7 A6 A5 A4 A3 A2 A1 A0 — D7 - D0 20
EWEN 1 00 1 1 X X X X X X X — High-Z 12
ERASE 1 11 A8 A7 A6 A5 A4 A3 A2 A1 A0 — (RDY/BSY
ERAL 1 00 1 0 X X X X X X X — (RDY/BSY
WRITE 1 01 A8 A7 A6 A5 A4 A3 A2 A1 A0 D7 - D0 (RDY/BSY
WRAL 1 00 0 1 X X X X X X X D7 - D0 (RDY/BSY
EWDS 1 00 0 0 X X X X X X X — High-Z 12
)9
)9
)25
)25
)10
)10
)18
)18
)11
)11
)27
)27
)12
)12
)20
)20
)11
)11
)27
)12
)12
)20
)20
1996 Microchip Technology Inc. DS20067G-page 3
93AA46/56/66
2.0 FUNCTIONAL DESCRIPTION
When the ORG pin is connected to V
nization is selected. When it is connected to ground,
the (x8) organization is selected. Instructions,
addresses and write data are clocked into the DI pin on
the rising edge of the clock (CLK). The DO pin is normally held in a high-Z state except when reading data
from the device, or when checking the READY/BUSY
status during a programming operation. The ready/
busy status can be verified during an Erase/Write operation by polling the DO pin; DO low indicates that programming is still in progress, while DO high indicates
the device is ready. The DO will enter the high-Z state
on the falling edge of the CS.
2.1 ST
The START bit is detected by the device if CS and DI
are both HIGH with respect to the positive edge of CLK
for the first time.
Before a STAR T condition is detected, CS, CLK, and DI
may change in any combination (except to that of a
STAR T condition), without resulting in any device operation (READ, WRITE, ERASE, EWEN, EWDS, ERAL,
and WRAL). As soon as CS is HIGH, the device is no
longer in the standby mode.
An instruction following a START condition will only be
executed if the required amount of opcode, address
and data bits for any particular instruction is clocked in.
After execution of an instruction (i.e., clock in or out of
the last required address or data bit) CLK and DI
become don't care bits until a new start condition is
detected.
ART Condition
2.2 DI/DO
It is possible to connect the Data In and Data Out pins
together. However, with this configuration it is possible
for a “bus conflict” to occur during the “dummy zero” that
precedes the READ operation, if A0 is a logic HIGH
level. Under such a condition the voltage level seen at
Data Out is undefined and will depend upon the relative
impedances of Data Out and the signal source driving
A0. The higher the current sourcing capability of A0,
the higher the voltage at the Data Out pin.
2.3 Data Protection
During power-up, all programming modes of operation
are inhibited until V
1.4V. During power-down, the source data protection
circuitry acts to inhibit all programming modes when
V
CC has fallen below 1.4V at nominal conditions.
The EWEN and EWDS commands give additional protection against accidentally programming during normal operation.
After power-up, the device is automatically in the
EWDS mode. Therefore, an EWEN instruction must be
performed before any ERASE or WRITE instruction can
be executed.
CC has reached a level greater than
, the (x16) orga-
CC
2.4 READ
The READ instruction outputs the serial data of the
addressed memory location on the DO pin. A dummy
zero bit precedes the 16 bit (x16 organization) or 8 bit
(x8 organization) output string. The output data bits will
toggle on the rising edge of the CLK and are stable after
the specified time delay (T
sible when CS is held high. The memory data will automatically cycle to the next register and output
sequentially.
PD). Sequential read is pos-
2.5 Erase/Write Enable and Disable (EWEN,EWDS)
The 93AA46/56/66 power up in the Erase/Write Disable
(EWDS) state. All programming modes must be preceded by an Erase/Write Enable (EWEN) instruction.
Once the EWEN instruction is executed, programming
remains enabled until an EWDS instruction is executed
or V
CC is removed from the device. To protect against
accidental data disturb, the EWDS instruction can be
used to disable all Erase/Write functions and should follow all programming operations. Execution of a READ
instruction is independent of both the EWEN and
EWDS instructions.
2.6 ERASE
The ERASE instruction forces all data bits of the specified address to the logical “1” state. CS is brought low
following the loading of the last address bit. This falling
edge of the CS pin initiates the self-timed programming
cycle.
The DO pin indicates the READY/BUSY
device if CS is brought high after a minimum of 250 ns
low (T
CSL). DO at logical “0” indicates that program-
ming is still in progress. DO at logical “1” indicates that
the register at the specified address has been erased
and the device is ready for another instruction.
The ERASE cycle takes 4 ms per word typical.
status of the
2.7 WRITE
The WRITE instruction is followed by 16 bits (or by 8
bits) of data which are written into the specified
address. After the last data bit is put on the DI pin, CS
must be brought low before the next rising edge of the
CLK clock. This falling edge of CS initiates the selftimed auto-erase and programming cycle.
The DO pin indicates the READY/BUSY
device if CS is brought high after a minimum of 250 ns
low (T
CSL) and before the entire write cycle is complete.
DO at logical “0” indicates that programming is still in
progress. DO at logical “1” indicates that the register at
the specified address has been written with the data
specified and the device is ready for another instruction.
The WRITE cycle takes 4 ms per word typical.
status of the
DS20067G-page 4
1996 Microchip Technology Inc.
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