MICROCHIP 27C128 Technical data



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27C128

128K (16K x 8) CMOS EPROM

FEATURES

• High speed performance

- 120 ns access time available

• CMOS Technology for low power consumption

- 20 mA Active current

- 100 µ A Standby current

• Factory programming available

• Auto-insertion-compatible plastic packages

• Auto ID aids automated programming

• Separate chip enable and output enable controls

• High speed “express” programming algorithm

• Organized 16K x 8: JEDEC standard pinouts

- 28-pin Dual-in-line package

- 32-pin PLCC Package

- 28-pin SOIC package

- Tape and reel

• Available for the following temperature ranges:

- Commercial: 0˚C to +70˚C

- Industrial: -40˚C to +85˚C

- Automotive: -40˚C to +125˚C

DESCRIPTION

The Microchip Technology Inc. 27C128 is a CMOS
128K bit (electrically) Programmable Read Only Mem­ory. The device is organized as 16K words by 8 bits
(16K bytes). Accessing individual bytes from an
address transition or from power-up (chip enable pin
going low) is accomplished in less than 120 ns. CMOS
design and processing enables this part to be used in
systems where reduced power consumption and high
reliability are requirements.A complete family of pack­ages is offered to provide the most flexibility in applica­tions. For surface mount applications, PLCC, SOIC, or
TSOP packaging is available. Tape and reel packaging
is also available for PLCC or SOIC packages. UV eras­able versions are also available.

A complete family of packages is offered to provide the
most flexibility in applications. For surface mount appli­cations, PLCC or SOIC packaging is available. Tape
and reel packaging is also available for PLCC or SOIC
packages.

PACKAGE TYPES

DIP/SOIC

• 1

V

PP

A12

2

A7

3

A6

4

A5

5

A4

6

A3

7

A2

8

A1

9

A0

10

O0

11

O1

12

O2

13

V

14

SS

PLCC

A7

A12

432

5

A6

6

A5

7

A4

8

A3

9

A2

10

A1

11

A0

12

NC

13

O0

14151617181920

O1

O2

28
27
26
25
24

27C128

23
22
21
20
19
18
17
16
15

PP

V NUVcc

1

323130

27C128

SS

O3O4O5

NU

V

PGM

A13

V

CC

PGM
A13
A8
A9
A11
OE
A10
CE
O7
O6
O5
O4
O3

29
28
27
26
25
24
23
22
21

A8
A9
A11
NC
OE
A10
CE
O7
O6

1996 Microchip Technology Inc. DS11003K-page 1



27C128

µ

µ

µ

±

µ

1.0 ELECTRICAL CHARA CTERISTICS

1.1 Maxim

CC

V

and input voltages w.r.t. V

voltage w.r.t. V

PP

V

um Ratings*

during

SS

SS

........-0.6V to +7.25V

TABLE 1-1: PIN FUNCTION TABLE

A0-A13 Address Inputs

programming..........................................-0.6V to +14V

Voltage on A9 w.r.t. V
Output voltage w.r.t. V

......................-0.6V to +13.5V

SS

SS

............... -0.6V to V

CC

+1.0V

Storage temperature ..........................-65˚C to +150˚C

Ambient temp. with power applied .....-65˚C to +125˚C

*Notice: Stresses above those listed under “Maximum Ratings”
may cause permanent damage to the device. This is a stress rat­ing only and functional operation of the device at those or any
other conditions above those indicated in the operation listings of
this specification is not implied. Exposure to maximum rating con­ditions for extended periods may affect device reliability.

O0 - O7 Data Output

TABLE 1-2: READ OPERATION DC CHARACTERISTICS

CC

V

= +5V ( ± 10%)
Commercial: Tamb = 0˚C to +70˚C
Industrial: Tamb = -40˚C to +85˚C
Extended (Automotive): Tamb = -40 ° C to +125 ° C

Name Function

CE
OE

PGM

PP

V

V

CC

V

SS

Chip Enable
Output Enable
Program Enable
Programming Voltage

+5V Power Supply
Ground

NC No Connection; No Internal Connec-

tions

NU Not Used; No External Connection Is

Allowed

Parameter Part* Status Symbol Min. Max. Units Conditions

Input Voltages all Logic "1"

Logic "0"
Input Leakage all — I
Output Voltages all Logic "1"

Logic "0"
Output Leakage all — I
Input Capacitance all — C

V

IH
IL

V

LI

V

OH
OL

V

LO

IN

2.0

V

+1

CC

-0.5

0.8

-10 10

V
V

AV

2.4

0.45VV

-10 10

AV

— 6 pF V

IN

= 0 to V

I

= -400 µ A

OH

I

OL

= 2.1 mA

OUT

= 0V; Tamb = 25 ° C;

IN

CC

= 0V to V

CC

f = 1 MHz

Output Capacitance all — C

OUT

—12pFV

OUT

= 0V; Tamb = 25 ° C;

f = 1 MHz

Power Supply Current,
Active

C

I,E

TTL input
TTL input

CC1

I

CC2

I

—
—

2025mAmAV

CC

= 5.5V; V
f = 1 MHz;
OE

= CE = V

I

= 0 mA;

OUT

V

IL

= -0.1 to 0.8V;

IH

V

= 2.0 to V

IL

PP

CC

;

= V

;

CC

Note 1

CC

Power Supply Current,
Standby

I

Read Current

PP

V

Read Voltage

PP

* Parts: C=Commercial Temperature Range; I, E=Industrial and Extended Temperature Ranges

C

I, E

all
all

all

TTL input
TTL input

CMOS input

Read Mode
Read Mode

S

I

(

)—

I

PP

V

PP

—
—

V

CC

-0.7

2
3

100
100

V

CC

mA
mA

ACE
AVV

= V

= 5.5V

PP

CC

0.2V

Note 1: Typical active current increases .75 mA per MHz up to operating frequency for all temperature ranges.

DS11003K-page 2

1996 Microchip Technology Inc.

TABLE 1-3: READ OPERATION AC CHARACTERISTICS



27C128

AC Testing Waveform: V
Output Load: 1 TTL Load + 100 pF
Input Rise and Fall Times: 10 ns
Ambient Temperature: Commercial: Tamb = 0˚C to +70˚C

27C128-12 27C128-15 27C128-17 27C128-20 27C128-25

Parameter Sym

Min Max Min Max Min Max Min Max Min Max

Address to Output Delay t
CE

to Output Delay t

OE to Output Delay t

or OE to O/P High

CE

— 120 — 150 — 170 — 200 — 250 ns CE

ACC

— 120 — 150 — 170 — 200 — 250 ns OE

CE
OE

— 65 — 70 — 70 — 75 — 100 ns CE=V

t

OFF

050050050055060ns

Impedance
Output Hold from

Address CE

or OE,

OH

0—0—0—0—0—ns

t

whichever occurs first

FIGURE 1-1: READ WAVEFORMS

IH

Address

V
VIL

IH

= 2.4V and V

IL

= 0.45V; V

OH

= 2.0V V

OL

= 0.8V

Industrial: Tamb = -40˚C to +85˚C
Extended (Automotive): Tamb = -40 ° C to +125 ° C

Units Conditions

Address Valid

=OE=V
=V

IL
IL

IL

CE

OE

Outputs
O0 - O7

Notes:

VIH
VIL

tCE(2)

VIH
VIL

OH

V

High Z

VOL

tACC

(1) tOFF is specified for OE or CE, whichever occurs first
(2) OE may be delayed up to t

CE - tOE after the falling edge of CE without impact on tCE

(3) This parameter is sampled and is not 100% tested.

tOE(2)

Valid Output

tOFF(1,3)

tOH

High Z

1996 Microchip Technology Inc. DS11003K-page 3

27C128

TABLE 1-4: PROGRAMMING DC CHARACTERISTICS

Ambient Temperature: Tamb = 25 ° C ± 5 ° C

CC

V

= 6.5V ± 0.25V, V

Parameter Status Symbol Min Max. Units Conditions

PP

= 13.0V ± 0.25V



µ

Input Voltages Logic”1”

Logic”0”
Input Leakage — I
Output Voltages Logic”1”

Logic”0”
V

Current, program & verify — I

CC

V

PP

Current, program — I
A9 Product Identification — V
Note 1: V

CC

must be applied simultaneously or before V

V

V

V
V

CC2
PP2

IH

LI

OH

OL

2.0

V

CC

+1

V

IL

-0.1

-10 10

2.4

0.8

0.45

V

AV

IN

VVI

OH

I

OL

= 0V to V
= -400 µ A

= 2.1 mA

CC

— 20 mA Note 1
— 25 mA Note 1

H

11.5 12.5 V

PP

and removed simultaneously or after V

PP

TABLE 1-5: PROGRAMMING AC CHARACTERISTICS

for Program, Program Verify AC Testing Waveform: V
and Program Inhibit Modes Ambient Temperature: Tamb=25°C± 5°C

V

CC= 6.5V ± 0.25V, VPP = VH = 13.0V ± 0.25V

Parameter Symbol Min Max Units Remarks

Address Set-Up Time t
Data Set-Up Time t
Data Hold Time t
Address Hold Time t
Float Delay (2) t

CC Set-Up Time tVCS 2—µs

V
Program Pulse Width (1) t

Set-Up Time tCES 2—µs

CE

Set-Up Time tOES 2—µs

OE

PP Set-Up Time tVPS 2—µs

V
Data Valid from OE
Note 1: For express algorithm, initial programming width tolerance is 100 µs ±5%.

2: This parameter is only sampled and not 100% tested. Output float is defined as the point where data is no

longer driven (see timing diagram).

=2.4V and V

IH

AS 2—µs

DS 2—µs
DH 2—µs
AH 0—µs
DF 0 130 ns

PW 95 105 µs 100 µs typical

=0.45V; V

IL

=2.0V; V

OH

OL=0.8V

tOE — 100 ns

DS11003K-page 4

1996 Microchip Technology Inc.

FIGURE 1-2: PROGRAMMING WAVEFORMS (1)

27C128

Address

Data

V

PP

VCC

CE

PGM

OE

VIH
VIL

VIH
VIL

13.0 V (3)

5.0 V

6.5 V (3)

5.0 V

IH

V
VIL

VIH
VIL
VIH

VIL

Program

Address Stable

tAS

tOES

High Z

tOE

(2)

Data In Stable Data Out Valid

tDS

tVPS

tVCS

tCES

tPW
tOPW

tDH

Verify

t

tDF
(2)

AH

Notes: (1)

The input timing reference is 0.8V for VIL and 2.0V for VIH.

(2)

t

DF and tOE are characteristics of the device but must be accommodated by the programmer.

(3)

Vcc = 6.5V ±0.25V, V

PP = VH = 13.0V ±0.25V for Express algorithm.

TABLE 1-6: MODES

Operation Mode CE OE PGM VPP A9 O0 - O7

Read V
Program VIL VIH VIL VH XDIN
Program Verify VIL VIL VIH VH XDOUT
Program Inhibit VIH XXVH X High Z
Standby V
Output Disable V
Identity V

X = Don’t Care

1.2 Read Mode

(See Timing Diagrams and AC Characteristics)
Read Mode is accessed when
a) the CE

b) the OE

pin is low to power up (enable) the chip
pin is low to gate the data to the output

pins

IL VIL VIH VCC XDOUT

IH XXVCC X High Z
IL VIH VIH VCC X High Z
IL VIL VIH VCC VH Identity Code

For Read operations, if the addresses are stable, the
address access time (t
CE

to output (tCE). Data is transferred to the output

after a delay from the falling edge of OE

ACC) is equal to the delay from

(tOE).

 1996 Microchip Technology Inc. DS11003K-page 5

27C128

1.3 Standby Mode

The standby mode is defined when the CE pin is high
(VIH) and a program mode is not defined.

When these conditions are met, the supply current will
drop from 20 mA to 100 µA.

1.4 Output Enable

This feature eliminates bus contention in microproces­sor-based systems in which multiple devices may drive
the bus. The outputs go into a high impedance state
when the following condition is true:

• The OE

and PGM pins are both high.

1.5 Erase Mode (U.V. Windowed Versions)

Windowed products offer the capability to erase the
memory array. The memory matrix is erased to the all
1’s state when exposed to ultraviolet light. To ensure
complete erasure, a dose of 15 watt-second/cm
required. This means that the device window must be
placed within one inch and directly underneath an ultra­violet lamp with a wavelength of 2537 Angstroms,
intensity of 12,000µW/cm
utes.

2

for approximately 20 min-

2

is

1.6 Programming Mode

The Express Algorithm has been developed to improve
the programming throughput times in a production
environment. Up to ten 100-microsecond pulses are
applied until the byte is verified. No overprogramming
is required. A flowchart of the express algorithm is
shown in Figure 1-3.

Programming takes place when:
a) V

CC is brought to the proper voltage,

b) V

PP is brought to the proper VH level,

c) the CE
d) the OE
e) the PGM

Since the erased state is “1” in the array, programming
of “0” is required. The address to be programmed is set
via pins A0-A13 and the data to be programmed is pre­sented to pins O0-O7. When data and address are sta­ble, OE
PGM

pin is low,

pin is high, and

pin is low.

is high, CE is low and a low-going pulse on the

line programs that location.

1.7 Verify

After the array has been programmed it must be veri­fied to ensure all the bits have been correctly pro­grammed. This mode is entered when all the following
conditions are met:

a) V

CC is at the proper level,

b) V

PP is at the proper VH level,

c) the CE
d) the PGM
e) the OE

line is low,

line is high, and

line is low.

1.8 Inhibit

When programming multiple devices in parallel with dif­ferent data, only CE
control to each device. By pulsing the CE
low on a particular device in conjunction with the PGM
or CE line low, that device will be programmed; all other
devices with CE
grammed with the data, although address and data will
be available on their input pins (i.e., when a high level
is present on CE
from programming.

or PGM need be under separate

or PGM line

or PGM held high will not be pro-

or PGM); and the device is inhibited

1.9 Identity Mode

In this mode specific data is output which identifies the
manufacturer as Microchip Technology Inc. and device
type. This mode is entered when Pin A9 is taken to V
(11.5V to 12.5V). The CE and OE lines must be at VIL.
A0 is used to access any of the two non-erasable bytes
whose data appears on O0 through O7.

Pin Input Output

Identity

Manufacturer
Device Type*

* Code subject to change

A0

V

VIH

IL

07O6O5O4O3O2O1O

010010001000011129

H
e

0

x

83

H

DS11003K-page 6  1996 Microchip Technology Inc.

FIGURE 1-3: PROGRAMMING EXPRESS ALGORITHM

Conditions:
T

amb = 25˚C ±5˚C

V

CC = 6.5 ±0.25V

V

PP = 13.0 ±0.25V

ADDR = First Location

Program one 100 µs pulse

Start

V

CC = 6.5V

V

PP = 13.0V

X = 0

Increment X

27C128

Verify

Byte

Fail

No Yes

X = 10 ?

Last

Address?

No

Increment Address

CC = VPP = 4.5V, 5.5V

V

Pass

Yes

Device

Failed

Device
Passed

 1996 Microchip Technology Inc. DS11003K-page 7

Yes No

All

bytes

= original

data?

Device

Failed

27C128

NOTES:

DS11003K-page 8  1996 Microchip Technology Inc.

NOTES:

27C128

 1996 Microchip Technology Inc. DS11003K-page 9

27C128

NOTES:

DS11003K-page 10  1996 Microchip Technology Inc.

27C128

27C128 Product Identification System

To order or to obtain information, e.g., on pricing or delivery, please use the listed part numbers, and refer to the factory or the listed
sales offices.

27C128 –25 I /P

Package: L = Plastic Leaded Chip Carrier (PLCC)

P = Plastic DIP (600 Mil)

SO = Plastic SOIC (300 Mil)

Temperature Blank = 0˚C to +70˚C
Range: I = -40˚C to +85˚C

E = -40˚C to +125˚C

Access 12 = 120 ns
Time: 15 = 150 ns

17 = 170 ns
20 = 200 ns
25 = 250 ns

Device: 27C128 128K (16K x 8) CMOS EPROM

 1996 Microchip Technology Inc. DS11003K-page 11

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9/3/96

All rights reserved.  1996, Microchip Technology Incorporated, USA. 9/96

Printed on recycled paper.

Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. No repre­sentation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement
of patents or other intellectual property rights arising from such use or otherwise. Use of Microchip’s products as critical components in life support systems is not autho­rized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property rights. The Microchip logo and
name are registered trademarks of Microchip Technology Inc. All rights reserved. All other trademarks mentioned herein are the property of their respective companies.

DS11003K-page 12  1996 Microchip Technology Inc.