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查询27C128供应商
27C128
128K (16K x 8) CMOS EPROM
FEATURES
• High speed performance
- 120 ns access time available
• CMOS Technology for low power consumption
- 20 mA Active current
- 100 µ A Standby current
• Factory programming available
• Auto-insertion-compatible plastic packages
• Auto ID aids automated programming
• Separate chip enable and output enable controls
• High speed “express” programming algorithm
• Organized 16K x 8: JEDEC standard pinouts
- 28-pin Dual-in-line package
- 32-pin PLCC Package
- 28-pin SOIC package
- Tape and reel
• Available for the following temperature ranges:
- Commercial: 0˚C to +70˚C
- Industrial: -40˚C to +85˚C
- Automotive: -40˚C to +125˚C
DESCRIPTION
The Microchip Technology Inc. 27C128 is a CMOS
128K bit (electrically) Programmable Read Only Memory. The device is organized as 16K words by 8 bits
(16K bytes). Accessing individual bytes from an
address transition or from power-up (chip enable pin
going low) is accomplished in less than 120 ns. CMOS
design and processing enables this part to be used in
systems where reduced power consumption and high
reliability are requirements.A complete family of packages is offered to provide the most flexibility in applications. For surface mount applications, PLCC, SOIC, or
TSOP packaging is available. Tape and reel packaging
is also available for PLCC or SOIC packages. UV erasable versions are also available.
A complete family of packages is offered to provide the
most flexibility in applications. For surface mount applications, PLCC or SOIC packaging is available. Tape
and reel packaging is also available for PLCC or SOIC
packages.
PACKAGE TYPES
DIP/SOIC
• 1
V
PP
A12
2
A7
3
A6
4
A5
5
A4
6
A3
7
A2
8
A1
9
A0
10
O0
11
O1
12
O2
13
V
14
SS
PLCC
A7
A12
432
5
A6
6
A5
7
A4
8
A3
9
A2
10
A1
11
A0
12
NC
13
O0
14151617181920
O1
O2
28
27
26
25
24
27C128
23
22
21
20
19
18
17
16
15
PP
V NUVcc
1
323130
27C128
SS
O3O4O5
NU
V
PGM
A13
V
CC
PGM
A13
A8
A9
A11
OE
A10
CE
O7
O6
O5
O4
O3
29
28
27
26
25
24
23
22
21
A8
A9
A11
NC
OE
A10
CE
O7
O6
1996 Microchip Technology Inc. DS11003K-page 1
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27C128
µ
µ
µ
±
µ
1.0 ELECTRICAL CHARA CTERISTICS
1.1 Maxim
CC
V
and input voltages w.r.t. V
voltage w.r.t. V
PP
V
um Ratings*
during
SS
SS
........-0.6V to +7.25V
TABLE 1-1: PIN FUNCTION TABLE
A0-A13 Address Inputs
programming..........................................-0.6V to +14V
Voltage on A9 w.r.t. V
Output voltage w.r.t. V
......................-0.6V to +13.5V
SS
SS
............... -0.6V to V
CC
+1.0V
Storage temperature ..........................-65˚C to +150˚C
Ambient temp. with power applied .....-65˚C to +125˚C
*Notice: Stresses above those listed under “Maximum Ratings”
may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any
other conditions above those indicated in the operation listings of
this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.
O0 - O7 Data Output
TABLE 1-2: READ OPERATION DC CHARACTERISTICS
CC
V
= +5V ( ± 10%)
Commercial: Tamb = 0˚C to +70˚C
Industrial: Tamb = -40˚C to +85˚C
Extended (Automotive): Tamb = -40 ° C to +125 ° C
Name Function
CE
OE
PGM
PP
V
V
CC
V
SS
Chip Enable
Output Enable
Program Enable
Programming Voltage
+5V Power Supply
Ground
NC No Connection; No Internal Connec-
tions
NU Not Used; No External Connection Is
Allowed
Parameter Part* Status Symbol Min. Max. Units Conditions
Input Voltages all Logic "1"
Logic "0"
Input Leakage all — I
Output Voltages all Logic "1"
Logic "0"
Output Leakage all — I
Input Capacitance all — C
V
IH
IL
V
LI
V
OH
OL
V
LO
IN
2.0
V
+1
CC
-0.5
0.8
-10 10
V
V
AV
2.4
0.45VV
-10 10
AV
— 6 pF V
IN
= 0 to V
I
= -400 µ A
OH
I
OL
= 2.1 mA
OUT
= 0V; Tamb = 25 ° C;
IN
CC
= 0V to V
CC
f = 1 MHz
Output Capacitance all — C
OUT
—12pFV
OUT
= 0V; Tamb = 25 ° C;
f = 1 MHz
Power Supply Current,
Active
C
I,E
TTL input
TTL input
CC1
I
CC2
I
—
—
2025mAmAV
CC
= 5.5V; V
f = 1 MHz;
OE
= CE = V
I
= 0 mA;
OUT
V
IL
= -0.1 to 0.8V;
IH
V
= 2.0 to V
IL
PP
CC
;
= V
;
CC
Note 1
CC
Power Supply Current,
Standby
I
Read Current
PP
V
Read Voltage
PP
* Parts: C=Commercial Temperature Range; I, E=Industrial and Extended Temperature Ranges
C
I, E
all
all
all
TTL input
TTL input
CMOS input
Read Mode
Read Mode
S
I
(
)—
I
PP
V
PP
—
—
V
CC
-0.7
2
3
100
100
V
CC
mA
mA
ACE
AVV
= V
= 5.5V
PP
CC
0.2V
Note 1: Typical active current increases .75 mA per MHz up to operating frequency for all temperature ranges.
DS11003K-page 2
1996 Microchip Technology Inc.
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TABLE 1-3: READ OPERATION AC CHARACTERISTICS
27C128
AC Testing Waveform: V
Output Load: 1 TTL Load + 100 pF
Input Rise and Fall Times: 10 ns
Ambient Temperature: Commercial: Tamb = 0˚C to +70˚C
27C128-12 27C128-15 27C128-17 27C128-20 27C128-25
Parameter Sym
Min Max Min Max Min Max Min Max Min Max
Address to Output Delay t
CE
to Output Delay t
OE to Output Delay t
or OE to O/P High
CE
— 120 — 150 — 170 — 200 — 250 ns CE
ACC
— 120 — 150 — 170 — 200 — 250 ns OE
CE
OE
— 65 — 70 — 70 — 75 — 100 ns CE=V
t
OFF
050050050055060ns
Impedance
Output Hold from
Address CE
or OE,
OH
0—0—0—0—0—ns
t
whichever occurs first
FIGURE 1-1: READ WAVEFORMS
IH
Address
V
VIL
IH
= 2.4V and V
IL
= 0.45V; V
OH
= 2.0V V
OL
= 0.8V
Industrial: Tamb = -40˚C to +85˚C
Extended (Automotive): Tamb = -40 ° C to +125 ° C
Units Conditions
Address Valid
=OE=V
=V
IL
IL
IL
CE
OE
Outputs
O0 - O7
Notes:
VIH
VIL
tCE(2)
VIH
VIL
OH
V
High Z
VOL
tACC
(1) tOFF is specified for OE or CE, whichever occurs first
(2) OE may be delayed up to t
CE - tOE after the falling edge of CE without impact on tCE
(3) This parameter is sampled and is not 100% tested.
tOE(2)
Valid Output
tOFF(1,3)
tOH
High Z
1996 Microchip Technology Inc. DS11003K-page 3
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27C128
TABLE 1-4: PROGRAMMING DC CHARACTERISTICS
Ambient Temperature: Tamb = 25 ° C ± 5 ° C
CC
V
= 6.5V ± 0.25V, V
Parameter Status Symbol Min Max. Units Conditions
PP
= 13.0V ± 0.25V
µ
Input Voltages Logic”1”
Logic”0”
Input Leakage — I
Output Voltages Logic”1”
Logic”0”
V
Current, program & verify — I
CC
V
PP
Current, program — I
A9 Product Identification — V
Note 1: V
CC
must be applied simultaneously or before V
V
V
V
V
CC2
PP2
IH
LI
OH
OL
2.0
V
CC
+1
V
IL
-0.1
-10 10
2.4
0.8
0.45
V
AV
IN
VVI
OH
I
OL
= 0V to V
= -400 µ A
= 2.1 mA
CC
— 20 mA Note 1
— 25 mA Note 1
H
11.5 12.5 V
PP
and removed simultaneously or after V
PP
TABLE 1-5: PROGRAMMING AC CHARACTERISTICS
for Program, Program Verify AC Testing Waveform: V
and Program Inhibit Modes Ambient Temperature: Tamb=25°C± 5°C
V
CC= 6.5V ± 0.25V, VPP = VH = 13.0V ± 0.25V
Parameter Symbol Min Max Units Remarks
Address Set-Up Time t
Data Set-Up Time t
Data Hold Time t
Address Hold Time t
Float Delay (2) t
CC Set-Up Time tVCS 2—µs
V
Program Pulse Width (1) t
Set-Up Time tCES 2—µs
CE
Set-Up Time tOES 2—µs
OE
PP Set-Up Time tVPS 2—µs
V
Data Valid from OE
Note 1: For express algorithm, initial programming width tolerance is 100 µs ±5%.
2: This parameter is only sampled and not 100% tested. Output float is defined as the point where data is no
longer driven (see timing diagram).
=2.4V and V
IH
AS 2—µs
DS 2—µs
DH 2—µs
AH 0—µs
DF 0 130 ns
PW 95 105 µs 100 µs typical
=0.45V; V
IL
=2.0V; V
OH
OL=0.8V
tOE — 100 ns
DS11003K-page 4
1996 Microchip Technology Inc.