Micrel NTB23N03R User Manual

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NTB23N03R
Power MOSFET 23 Amps, 25 Volts
N−Channel D2PAK
Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
http://onsemi.com
Features
Pb−Free Packages are Available
Typical Applications
Planar HD3e Process for Fast Switching Performance
Low R
Low C
to Minimize Conduction Loss
DS(on)
to Minimize Driver Loss
iss
Low Gate Charge
Optimized for High Side Switching Requirements in
High−Efficiency DC−DC Converters
MAXIMUM RATINGS (T
Parameter Symbol Value Unit
Drain−to−Source Voltage V Gate−to−Source Voltage − Continuous V Drain Current
− Continuous @ TA = 25°C, Limited by Chip
− Continuous @ TA = 25°C, Limited by Package
− Single Pulse (tp = 10 ms) Total Power Dissipation @ TA = 25°C P Operating and Storage Temperature Range TJ, T
Thermal Resistance − Junction−to−Case Maximum Lead Temperature for Soldering
Purposes, 1/8 from case for 10 seconds
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
= 25°C unless otherwise specified)
J
DSS
GS
I
D
I
D
I
DM
D
stg
R
q
JC
T
L
25 Vdc
±20 Vdc
23
6.0 60
37.5 W
−55 to 150
3.3 °C/W
260 °C
A
°C
23 AMPERES, 25 VOLTS
G
= 32 mW (Typ)
N−CHANNEL
D
S
MARKING DIAGRAM
& PIN ASSIGNMENTS
4
T23 N03G AYWW
1
Gate
2
1
D2PAK
CASE 418B
STYLE 2
R
DS(on)
3
T23N03 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package
4 Drain
2
Drain
3 Source
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 2
See detailed ordering and shipping information in the package
ORDERING INFORMATION
dimensions section on page 2 of this data sheet.
1 Publication Order Number:
NTB23N03R/D
NTB23N03R
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise specified)
J
Characteristics Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 1)
(V
= 0 Vdc, I
Temperature Coefficient (Positive)
GS
= 250 mAdc)
D
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 150°C)
Gate−Body Leakage Current
(VGS = ±20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage (Note 1)
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative) Static Drain−to−Source On−Resistance (Note 1)
(VGS = 4.5 Vdc, ID = 6 Adc) (VGS = 10 Vdc, ID = 6 Adc)
Forward Transconductance (Note 1)
(VDS = 10 Vdc, ID = 6 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance Output Capacitance C
(VDS = 20 Vdc, VGS = 0 V, f = 1 MHz)
Transfer Capacitance C
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time Rise Time t Turn−Off Delay Time t
(VGS = 10 Vdc, VDD = 10 Vdc,
ID = 6 Adc, RG = 3 W)
Fall Time t Gate Charge
(VGS = 4.5 Vdc, ID = 6 Adc,
VDS = 10 Vdc) (Note 1)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 6 Adc, VGS = 0 Vdc) (Note 1)
(IS = 6 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
(IS = 6 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms) (Note 1)
Reverse Recovery Stored Charge Q
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
2. Switching characteristics are independent of operating junction temperatures.
V(br)
I
I
V
GS(th)
R
DS(on)
g
C
t
d(on)
d(off)
V
DSS
GSS
FS
iss oss rss
r
f
Q Q Q
SD
t
rr
t
a
t
b RR
DSS
T 1 2
25
28
mV/°C
mAdc
Vdc
1.0 10
±100 nAdc
Vdc
1.0
1.8
2.0
mV/°C
mW
50.3
32.3
60 45
Mhos
14
225
108
48
2.0
14.9
9.9
2.0
3.76
1.7
1.6
Vdc
0.87
0.74
1.2
8.7
5.2
3.5
0.003
pF
ns
nC
ns
mC
ORDERING INFORMATION
Device Package Shipping
NTB23N03R NTB23N03RG
D2PAK D2PAK
50 Units / Rail 50 Units / Rail
(Pb−Free) NTB23N03RT4 NTB23N03RT4G
D2PAK D2PAK
800 Units / Tape & Reel 800 Units / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
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