查询NTB23N03R供应商
NTB23N03R
Power MOSFET
23 Amps, 25 Volts
N−Channel D2PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
http://onsemi.com
Features
• Pb−Free Packages are Available
Typical Applications
• Planar HD3e Process for Fast Switching Performance
• Low R
• Low C
to Minimize Conduction Loss
DS(on)
to Minimize Driver Loss
iss
• Low Gate Charge
• Optimized for High Side Switching Requirements in
High−Efficiency DC−DC Converters
MAXIMUM RATINGS (T
Parameter Symbol Value Unit
Drain−to−Source Voltage V
Gate−to−Source Voltage − Continuous V
Drain Current
− Continuous @ TA = 25°C, Limited by Chip
− Continuous @ TA = 25°C, Limited by Package
− Single Pulse (tp = 10 ms)
Total Power Dissipation @ TA = 25°C P
Operating and Storage Temperature Range TJ, T
Thermal Resistance − Junction−to−Case
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
= 25°C unless otherwise specified)
J
DSS
GS
I
D
I
D
I
DM
D
stg
R
q
JC
T
L
25 Vdc
±20 Vdc
23
6.0
60
37.5 W
−55 to
150
3.3 °C/W
260 °C
A
°C
23 AMPERES, 25 VOLTS
G
= 32 mW (Typ)
N−CHANNEL
D
S
MARKING DIAGRAM
& PIN ASSIGNMENTS
4
T23
N03G
AYWW
1
Gate
2
1
D2PAK
CASE 418B
STYLE 2
R
DS(on)
3
T23N03 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
4 Drain
2
Drain
3
Source
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 2
See detailed ordering and shipping information in the package
ORDERING INFORMATION
dimensions section on page 2 of this data sheet.
1 Publication Order Number:
NTB23N03R/D
NTB23N03R
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise specified)
J
Characteristics Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 1)
(V
= 0 Vdc, I
Temperature Coefficient (Positive)
GS
= 250 mAdc)
D
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 150°C)
Gate−Body Leakage Current
(VGS = ±20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage (Note 1)
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Note 1)
(VGS = 4.5 Vdc, ID = 6 Adc)
(VGS = 10 Vdc, ID = 6 Adc)
Forward Transconductance (Note 1)
(VDS = 10 Vdc, ID = 6 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance C
(VDS = 20 Vdc, VGS = 0 V, f = 1 MHz)
Transfer Capacitance C
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
Rise Time t
Turn−Off Delay Time t
(VGS = 10 Vdc, VDD = 10 Vdc,
ID = 6 Adc, RG = 3 W)
Fall Time t
Gate Charge
(VGS = 4.5 Vdc, ID = 6 Adc,
VDS = 10 Vdc) (Note 1)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 6 Adc, VGS = 0 Vdc) (Note 1)
(IS = 6 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
(IS = 6 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms) (Note 1)
Reverse Recovery Stored Charge Q
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperatures.
V(br)
I
I
V
GS(th)
R
DS(on)
g
C
t
d(on)
d(off)
V
DSS
GSS
FS
iss
oss
rss
r
f
Q
Q
Q
SD
t
rr
t
a
t
b
RR
DSS
T
1
2
25
−
28
−
−
mV/°C
−
mAdc
Vdc
−
−
−
−
1.0
10
− − ±100 nAdc
Vdc
1.0
−
1.8
−
2.0
−
mV/°C
mW
−
−
50.3
32.3
60
45
Mhos
− 14 −
− 225 −
− 108 −
− 48 −
− 2.0 −
− 14.9 −
− 9.9 −
− 2.0 −
− 3.76 −
− 1.7 −
− 1.6 −
Vdc
−
−
0.87
0.74
1.2
−
− 8.7 −
− 5.2 −
− 3.5 −
− 0.003 −
pF
ns
nC
ns
mC
ORDERING INFORMATION
Device Package Shipping
NTB23N03R
NTB23N03RG
D2PAK
D2PAK
50 Units / Rail
50 Units / Rail
(Pb−Free)
NTB23N03RT4
NTB23N03RT4G
D2PAK
D2PAK
800 Units / Tape & Reel
800 Units / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
†
http://onsemi.com
2