MICREL MIC5013 Datasheet

MIC5013 Micrel

MIC5013

Protected High- or Low-Side MOSFET Driver

General Description

The MIC5013 is an 8-pin MOSFET driver with over-current
shutdown and a fault flag. It is designed to drive the gate of
an N-channel power MOSFET above the supply rail high-side
power switch applications. The MIC5013 is compatible with
standard or current-sensing power MOSFETs in both high­and low-side driver topologies.

The MIC5013 charges a 1nF load in 60µs typical and protects
the MOSFET from over-current conditions. The current sense
trip point is fully programmable and a dynamic threshold
allows high in-rush current loads to be started. A fault pin
indicates when the MIC5013 has turned off the FET due to
excessive current.

Other members of the Micrel driver family include the MIC5011
minimum parts count driver and MIC5012 dual driver.

Typical Application

Features

• 7V to 32V operation

• Less than 1µA standby current in the “OFF” state

• Available in small outline SOIC packages

• Internal charge pump to drive the gate of an N-channel

power FET above supply

• Internal zener clamp for gate protection

• 60µs typical turn-on time to 50% gate overdrive

• Programmable over-current sensing

• Dynamic current threshold for high in-rush loads

• Fault output pin indicates current faults

• Implements high- or low-side switches

Applications

• Lamp drivers

• Relay and solenoid drivers

• Heater switching

• Power bus switching

• Motion control

Ordering Information

Control Input

Note: The MIC5013 is ESD sensitive.

R

TH

20kΩ

1
2
3
4

MIC5013

Input
Thresh
Sense
Source

Part Number Temperature Range Package

MIC5013BN –40°C to +85°C 8-pin Plastic DIP
MIC5013BM –40°C to +85°C 8-pin SOIC

+

=24V

V

+

10µF

8

Fault

7

V+

6

Gate

5

Gnd

SENSE

43Ω

KELVIN

R

S

R1

4.3kΩ

IRCZ44
(S=2590,
R=11mΩ)

SOURCE

LOAD

Figure 1. High-Side Driver with

Current-Sensing MOSFET

SR( +100mV)

V

R I

– ( +100mV)

L

V

100mV

2200

V

TRIP

=30A (trip current)I

=100mV

TRIP

V

TRIP

+

SRR

(SR+R )

S

S

R =

S

R1=

R = –1000

TH

For this example:

L

V

TRIP

Protected under one or more of the following Micrel patents:

patent #4,951,101; patent #4,914,546

Micrel, Inc. • 1849 Fortune Drive • San Jose, CA 95131 • USA • tel + 1 [phone] • fax + 1 [phone] • http://www.micrel.com

July 2000 1 MIC5013

MIC5013 Micrel

Absolute Maximum Ratings (Note 1, 2)

Input Voltage, Pin 1 –10 to V
Threshold Voltage, Pin 2 –0.5 to +5V
Sense Voltage, Pin 3 –10V to V
Source Voltage, Pin 4 –10V to V
Current into Pin 4 50mA
Gate Voltage, Pin 6 –1V to 50V
Supply Voltage (V+), Pin 7 –0.5V to 36V
Fault Output Current, Pin 8 –1mA to +1mA
Junction Temperature 150°C

Pin Description (Refer to Figures 1 and 2)

Pin Number Pin Name Pin Function

1 Input Resets current sense latch and turns on power MOSFET when taken above

threshold (3.5V typical). Pin 1 requires <1µA to switch.

2 Threshold Sets current sense trip voltage according to:

where RTH to ground is 3.3k to 20kΩ. Adding capacitor CTH increases the
trip voltage at turn-on to 2V. Use C
constant.

3 Sense The sense pin causes the current sense to trip when V

V

SOURCE

a 3 lead FET or a resistor RS in the sense lead of a current sensing FET.

4 Source Reference for the current sense voltage on pin 3 and return for the gate

clamp zener. Connect to the load side of current shunt or kelvin lead of
current sensing FET. Pins 3 and 4 can safely swing to –10V when turning

off inductive loads.
5 Ground
6 Gate Drives and clamps the gate of the power FET. Pin 6 will be clamped to

approximately –0.7V by an internal diode when turning off inductive loads.
7V

8 Fault Outputs status of protection circuit when pin 1 is high. Fault low indicates

+

Supply pin; must be decoupled to isolate from large transients caused by

the power FET drain. 10µF is recommended close to pins 7 and 5.

normal operation; fault high indicates current sense tripped.

Operating Ratings (Notes 1, 2)

+

Power Dissipation 1.25W

θ

(Plastic DIP) 100°C/W

JA

+

θJA (SOIC) 170°C/W

+

Ambient Temperature: B version –40°C to +85°C
Storage Temperature –65°C to +150°C
Lead Temperature 260°C
(Soldering, 10 seconds)
Supply Voltage (V+), Pin 7 7V to 32V high side

7V to 15V low side

V=

TRIP

=10µF for a 10ms turn-on time

TH

. Pin 3 is used in conjunction with a current shunt in the source of

2200

R +1000

TH

SENSE

is V

TRIP

above

Pin Configuration

MIC5013

1

Input

2

Thresh

3

Sense

4

Source

MIC5013 2 July 2000

Fault

V+

Gate

Gnd

8
7
6
5

MIC5013 Micrel

Electrical Characteristics (Note 3) Test circuit. T

= –55°C to +125°C, V+ = 15V, all switches open, unless

A

otherwise specified.

Parameter Conditions Min Typical Max Units

Supply Current, I

Logic Input Voltage, V

Logic Input Current, I

7

IN

1

Input Capacitance Pin 1 5 pF
Gate Drive, V

GATE

Zener Clamp, S2 closed, VIN = 5V V+ = 15V, VS = 15V 11 12.5 15 V
V

– V

GATE

Gate Turn-on Time, t

SOURCE

ON

(Note 4) for V
Gate Turn-off Time, t

OFF

Threshold Bias Voltage, V
Current Sense Trip Voltage, S2 closed, VIN = 5V, V+ = 7V, S4 closed 75 105 135 mV
V

– V

SENSE

SOURCE

Peak Current Trip Voltage, S3, S4 closed, 1.6 2.1 V
V

– V

SENSE

Fault Output Voltage, V

SOURCE

8

V+ = 32V VIN = 0V, S4 closed 0.1 10 µA

VIN = VS = 32V 8 20 mA

V+ = 4.75V Adjust VIN for V

Adjust VIN for V

V+ =15V Adjust VIN for V

low 2 V

GATE

high 4.5 V

GATE

high 5.0 V

GATE

V+ = 32V VIN = 0V –1 µA

VIN = 32V 1 µA

S1, S2 closed, V+ = 7V, I6 = 0 13 15 V
VS = V+, VIN = 5V V+ = 15V, I6 = 100 µA2427V

V+ = 32V, VS = 32V 11 13 16 V

VIN switched from 0 to 5V; measure time 60 200 µs

to reach 20V

GATE

VIN switched from 5 to 0V; measure time 4 10 µs
for V

I2 = 200 µA 1.7 2 2.2 V

2

Increase I

to reach 1V

GATE

3

I2 = 100 µAVS = 4.9V, S4 open 70 100 130 mV
V+ = 15V S4 closed 150 210 270 mV
I2 = 200 µAVS = 11.8V, S4 open 140 200 260 mV
V+ = 32V VS = 0V, S4 open 360 520 680 mV
I2 = 500 µAVS = 25.5V, S4 open 350 500 650 mV

V+ = 15V, VIN = 5V
VIN = 0V, I8 = –100 µA 0.4 1 V
VIN = 5V, I8 = 100 µA, current sense tripped 14 14.6 V

Note 1 Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Electrical specifications do not apply when

Note 2 The MIC5010 is ESD sensitive.
Note 3 Minimum and maximum Electrical Characteristics are 100% tested at TA = 25°C and TA = 85°C, and 100% guaranteed over the entire

Note 4 Test conditions reflect worst case high-side driver performance. Low-side and bootstrapped topologies are significantly faster—see

operating the device beyond its specified Operating Ratings.

range. Typicals are characterized at 25°C and represent the most likely parametric norm.

Applications Information.

July 2000 3 MIC5013

MIC5013 Micrel

Test Circuit

V

IN

S3

Typical Characteristics

Supply Current

12

10

8

6

4

2

SUPPLY CURRENT (mA)

V+

I3

50Ω

500Ω

I2

S4

1W

S2

VS

1
2
3
4

3.5k

MIC5013

Input
Thresh
Sense
Source

Fault

V+

Gate

Gnd

8
7
6
5

V

+

1µF

GATE

1nF

I8

S1

I6

DC Gate Voltage
above Supply

14
12
10

8
6

VGATE – V+ (V)

4
2

0

0 5 10 15 20 25 30 35

SUPPLY VOLTAGE (V)

High-side Turn-on Time*

350
300

250
200

150
100

TURN-ON TIME (µS)

50

0

03691215

SUPPLY VOLTAGE (V)

* Time for gate to reach V+ + 5V in test circuit with VS = V+ – 5V (prevents gate clamp from interfering with measurement).

C =1 nF

GATE

0

0 3 6 9 12 15

SUPPLY VOLTAGE (V)

High-side Turn-on Time*

3.5

3.0
C =10 nF

2.5

2.0

1.5

1.0

TURN-ON TIME (mS)

0.5

0

03691215

SUPPLY VOLTAGE (V)

GATE

MIC5013 4 July 2000

MIC5013 Micrel

TURN-ON TIME (µS)

Typical Characteristics (Continued)

Low-side Turn-on Time
for Gate = 5V

1000

300

100

30
10

C =1 nF

GATE

TURN-ON TIME (µS)

3

1

03691215

C =10 nF

GATE

SUPPLY VOLTAGE (V)

Turn-off Time

50

Low-side Turn-on Time
for Gate = 10V

3000

C =10 nF

1000

300

100

C =1 nF

30

10

3

GATE

03691215

GATE

SUPPLY VOLTAGE (V)

Turn-on Time

2.0

C =10 nF

40

30

20

TURN-OFF TIME (µS)

10

0

03691215

GATE

C =1 nF

GATE

SUPPLY VOLTAGE (V)

250

200

150

100

Charge Pump
Output Current

V =V

GATE

+

V =V +5V

GATE

1.75

1.5

1.25

1.0

0.75

NORMALIZED TURN-ON TIME

0.5
–25 0 25 50 75 100 125

DIE TEMPERATURE (°C)

+

July 2000 5 MIC5013

50

+

VS=V –5V

CHARGE-PUMP CURRENT (µA)

0

0 5 10 15 20 25 30

SUPPLY VOLTAGE (V)