MEMT SMBR860 Datasheet

SCHOTTKY DIE SPECIFICATION TYPE: SMBR860

60 V 8 A ( Super Low Ir) Single Anode

SYM Die Sort UNIT

DC Blocking Voltage: Ir=1mA(for wafer form) VRRM 63 Volt
Ir=0.5mA (for dice form)

IFAV Amp

VF MAX 0.67 Volt

0.94

IR MAX 0.06 mA

Cj MAX pF

IFSM Amp

Tj °C

TSTG °C

Specification apply to die only. Actual performance may degrade when assembled.
MEMT does not guarantee device performance after assembly.
Data sheet information is subjected to change without notice.

DIM um

2

Mil

2

A 2220 87.40

B 2120 83.5
C 2140 84.3

D 254 10

305 12

Micro-Electro-Magnetical Tech Co.

Spec. Limit

60

8

Thickness (Max)

0.07

Top Metal Pad Size
Passivation Seal
Thickness (Min)

PS:

(1)Cutting street width is around 80um(3.14mil).

(2)Both of top-side and back-side metals are Ti/Ni/Ag.

General Description:

150

-65 to +125

-65 to +125

0.68

0.95

@ 8 Amperes, Ta=25°C
@ 20 Amperes, 25°C
Maximum Instantaneous Reverse Voltage
VR= 60 Volt, Ta=25°C

ELECTRICAL CHARACTERISTICS

Average Rectified Forward Current
Maximum Instantaneous Forward Voltage

Maximum Junction Capacitance @ 0V, 1MHZ

MAXIMUM RATINGS

Nonrepetitive Peak Surge Current
Operating Junction Temperature
Storage Temperatures

ITEM

Die Size

DICE OUTLINE DRAWING

B

C

A

Top-side Metal

D

SiO2 Passivation
P+ Guard Ring
Back-side Metal