MEMT SMBR1640 Datasheet

SCHOTTKY DIE SPECIFICATION TYPE: SMBR1640

40 V 15 A (Super Low Ir) Single Anode

SYM Die Sort UNIT

DC Blocking Voltage: Ir=1mA(for wafer form) VRRM 42.5 Volt
Ir=0.5mA (for dice form)

IFAV Amp

VF MAX 0.6 Volt

0.72

IR MAX 0.08 mA

Cj MAX pF

IFSM Amp

Tj °C

TSTG °C

Specifications apply to die only. Actual performance may degrade when assembled.
MEMT does not guarantee device performance after assembly.
Data sheet information is subjected to change without notice.

DIM um

2

Mil

2

A 3116 122.67

B 3016 118.70
C 3036 119.50

D 254 10.00

305 12.00

Operating Junction Temperature
Storage Temperature

ITEM

Die Size

DICE OUTLINE DRAWING

Maximum Junction Capacitance @ 0V, 1MHZ

MAXIMUM RATINGS

Nonrepetitive Peak Surge Current

@ VR= 40 Volt, Ta=25°C

ELECTRICAL CHARACTERISTICS

Average Rectified Forward Current
Maximum Instantaneous Forward Voltage

General Description:

225

-65 to +125

-65 to +125

0.62

0.75

@ 15 Ampere, Ta=25°C
@ 20 Ampere, Ta=25°C
Maximum Instantaneous Reverse Voltage

PS:

(1)Cutting street width is around 80um(3.14mil).
(2)Both of top-side and back-side metals are Ti/Ni/Ag.

Thickness (Max)

0.09

Top Metal Pad Size
Passivation Seal
Thickness (Min)

Micro-Electro-Magnetical Tech Co.

Spec. Limit

40

15

B

C

A

Top-side Metal

D

SiO2 Passivation
P+ Guard Ring
Back-side Metal