MEMT MBR860 Datasheet

2

2

(2)Both of top-side and back-side metals are Ti/Ni/Ag.

Micro-Electro-Magnetical Tech Co.

SCHOTTKY DIE SPECIFICATION TYPE: MBR860

General Description:

60 V 8 A ( Low Ir) Single Anode

ELECTRICAL CHARACTERISTICS

DC Blocking Voltage: Ir=1mA(for wafer form) VRRM 63 Volt

SYM Die Sort UNIT

Spec. Limit

60
Ir=0.5mA (for dice form)
Average Rectified Forward Current

IFAV Amp

8
Maximum Instantaneous Forward Voltage
@ 8 Amperes, Ta=25°C
@ 20 Amperes, 25°C

VF MAX 0.665 Volt

0.675

0.94

0.93
Maximum Instantaneous Reverse Voltage
VR= 60 Volt, Ta=25°C

Maximum Junction Capacitance @ 0V, 1MHZ

IR MAX 0.08 mA

0.09

Cj MAX pF

MAXIMUM RATINGS

Nonrepetitive Peak Surge Current
Operating Junction Temperature
Storage Temperatures

IFSM Amp

Tj °C

TSTG °C

150

-65 to +125

-65 to +125

Specification apply to die only. Actual performance may degrade when assembled.
MEMT does not guarantee device performance after assembly.
Data sheet information is subjected to change without notice.

DICE OUTLINE DRAWING

DIM um

A 2220 87.40

A

C

B 2120 83.5
C 2140 84.3

D 254 10

Die Size
Top Metal Pad Size
Passivation Seal
Thickness (Min)
Thickness (Max)

B

Top-side Metal

SiO2 Passivation

D

P+ Guard Ring
Back-side Metal

PS:

(1)Cutting street width is around 80um(3.14mil).

ITEM

305 12

Mil