Micro-Electro-Magnetical Tech Co.
(2)Both of top-side and back-side metals are Ti/Ni/Ag.
SCHOTTKY DIE SPECIFICATION TYPE: MBR240
General Description:
40 V 2 A (Low Ir) Single Anode
ELECTRICAL CHARACTERISTICS Spec. Limit
DC Blocking Voltage: Ir=1mA(for wafer form) VRRM 42.5 Volt
SYM Die Sort UNIT
40
Ir=0.5mA (for dice form)
Average Rectified Forward Current 2
IFAV Amp
Maximum Instantaneous Forward Voltage
@ 2 Amperes, Ta=25°C 0.55
VF MAX 0.48 Volt
Maximum Instantaneous Reverse Voltage
VR= 40 Volt, Ta=25°C 0.1
Maximum Junction Capacitance @ 0V, 1MHZ
IR MAX 0.08 mA
Cj MAX pF
MAXIMUM RATINGS
Nonrepetitive Peak Surge Current 60
Operating Junction Temperature -65 to +150
Storage Temperatures -65 to +150
IFSM Amp
Tj °C
TSTG °C
Specification apply to die only. Actual performance may degrade when assembled.
MEMT does not guarantee device performance after assembly.
Data sheet information is subjected to change without notice.
DICE OUTLINE DRAWING
DIM um
A 1245 49.01
ITEM
Die Size
2
Mil
2
B 1025 40.3
A
B
Top-side Metal
D
C
SiO2 Passivation
P+ Guard Ring
Back-side Metal
C 1203 41.1
D 254 10
Passivation Seal
Thickness (Min)
Thickness (Max)
305 12
PS:
(1)Cutting street width is around 80um(3.14mil).