MEMT MBR2100 Datasheet

Micro-Electro-Magnetical Tech Co.

SCHOTTKY DIE SPECIFICATION TYPE: MBR2100

General Description:

100 V 2 A ( Low Ir) Single Anode

ELECTRICAL CHARACTERISTICS

SYM Die Sort UNIT

DC Blocking Voltage: Ir=1mA(for wafer form) VRRM 105 Volt

Spec. Limit

100
Ir=0.5mA (for dice form)
Average Rectified Forward Current

IFAV Amp

2
Maximum Instantaneous Forward Voltage
@ 1 Amperes, Ta=25°C
@ 2 Amperes, 25°C

VF MAX 0.73 Volt

0.74

0.82

0.81
Maximum Instantaneous Reverse Voltage
VR= 100 Volt, Ta=25°C

Maximum Junction Capacitance @ 0V, 1MHZ

IR MAX 0.09 mA

Cj MAX pF

0.1

MAXIMUM RATINGS

Nonrepetitive Peak Surge Current
Operating Junction Temperature
Storage Temperatures

IFSM Amp

Tj °C

TSTG °C

50

-65 to +125

-65 to +125

Specification apply to die only. Actual performance may degrade when assembled.
MEMT does not guarantee device performance after assembly.
Data sheet information is subjected to change without notice.

DICE OUTLINE DRAWING

DIM um

A 1245 49.01

B 1025 40.3

A

C

C 1203 47.3

D 254 10

Die Size
Top Metal Pad Size
Passivation Seal
Thickness (Min)

ITEM

Thickness (Max)

B

Top-side Metal

SiO2 Passivation

D

P+ Guard Ring
Back-side Metal

PS:

(1)Cutting street width is around 80um(3.14mil).
(2)Both of top-side and back-side metals are Ti/Ni/Ag.

2

305 12

Mil

2