MEMT MBR1640 Datasheet

Micro-Electro-Magnetical Tech Co.

SCHOTTKY DIE SPECIFICATION TYPE: MBR1640

General Description:

40 V 15 A (Low Ir) Single Anode

ELECTRICAL CHARACTERISTICS

SYM Die Sort UNIT

DC Blocking Voltage: Ir=1mA(for wafer form) VRRM 42.5 Volt

Spec. Limit

40
Ir=0.5mA (for dice form)
Average Rectified Forward Current

IFAV Amp

15
Maximum Instantaneous Forward Voltage
@ 15 Ampere, Ta=25°C
@ 20 Ampere, Ta=25°C

VF MAX 0.55 Volt

0.575

0.69

0.68
Maximum Instantaneous Reverse Voltage
@ VR= 40 Volt, Ta=25°C

Maximum Junction Capacitance @ 0V, 1MHZ

IR MAX 0.15 mA

Cj MAX pF

0.2

MAXIMUM RATINGS

Nonrepetitive Peak Surge Current
Operating Junction Temperature
Storage Temperature

IFSM Amp

Tj °C

TSTG °C

250

-65 to +125

-65 to +125

Specifications apply to die only. Actual performance may degrade when assembled.
MEMT does not guarantee device performance after assembly.
Data sheet information is subjected to change without notice.

DICE OUTLINE DRAWING

DIM um

A 3116 122.67

B 3016 118.70

A

C

C 3036 119.50

D 254 10.00

Die Size
Top Metal Pad Size
Passivation Seal
Thickness (Min)

ITEM

Thickness (Max)

B

Top-side Metal

SiO2 Passivation

D

P+ Guard Ring

Back-side Metal

PS:

(1)Cutting street width is around 80um(3.14mil).
(2)Both of top-side and back-side metals are Ti/Ni/Ag.

2

305 12.00

Mil

2