MEMT MBR1100S Datasheet

SCHOTTKY DIE SPECIFICATION TYPE: MBR1100S

100 V 1 A ( Low Ir) Single Anode

SYM Die Sort UNIT

DC Blocking Voltage: Ir=1mA(for wafer form) VRRM 105 Volt
Ir=0.5mA (for dice form)

IFAV Amp

VF MAX 0.84 Volt

IR MAX 0.045 mA

Cj MAX pF

IFSM Amp

Tj °C

TSTG °C

Specification apply to die only. Actual performance may degrade when assembled.
MEMT does not guarantee device performance after assembly.
Data sheet information is subjected to change without notice.

DIM um

2

Mil

2

A 914 35.98

B 814 32.0
C 834 32.8

D 254 10

305 12

Micro-Electro-Magnetical Tech Co.

Spec. Limit

100

1

Thickness (Max)

0.05

Top Metal Pad Size
Passivation Seal
Thickness (Min)

PS:

(1)Cutting street width is around 80um(3.14mil).
(2)Both of top-side and back-side metals are Ti/Ni/Ag.

General Description:

25

-65 to +125

-65 to +125

0.85 @ 1 Amperes, Ta=25°C

Maximum Instantaneous Reverse Voltage
VR= 100 Volt, Ta=25°C

ELECTRICAL CHARACTERISTICS

Average Rectified Forward Current
Maximum Instantaneous Forward Voltage

Maximum Junction Capacitance @ 0V, 1MHZ

MAXIMUM RATINGS

Nonrepetitive Peak Surge Current
Operating Junction Temperature
Storage Temperatures

ITEM

Die Size

DICE OUTLINE DRAWING

B

C

A

Top-side Metal

D

SiO2 Passivation
P+ Guard Ring

Back-side Metal