MELEXIS US5881L, US5881E Datasheet

US5881

CMOS Multi-Purpose Switch

US5881 CMOS Multi-Purpose Switch 3901005881 Rev 5.0 24/July/01 Page 1

Features and Benefits

• Chopper stabilized amplifier stage

• New miniature package / thin, high reliability package

• Operation down to 3.5V

• CMOS for optimum stability, quality and cost

Applications

• Solid state switch

• Limit switch

• Current limit

• Interrupter

• Current sensing

Ordering Information

Part No. Temperature Suffix Package Temperature Range

US5881 E SO or UA -40oC to 85oC Extended
US5881 L SO or UA -40oC to 150oC Automotive

*Contact factory or sales representative for legacy temperature options

Description

The US5881 is a unipolar Hall effect sensor IC fab­ricated from mixed signal CMOS technology. It in­corporates advanced chopper stabilization tech­niques to provide accurate and stable magnetic
switch points. There are many applications for this
sensor in addition to those listed above. The de­sign, specifications and performance have been
optimized for applications of solid state switches.

The output transistor will be switched on (BOP) in
the presence of a sufficiently strong South pole
magnetic field facing the marked side of the pack­age. Similarly, the output will be switched off (BRP)
in the presence of a weaker South field and remain
off with “0” field. The SOT-23 device is reversed
from the UA package. The SOT-23 output transis­tor will be switched on (BOP) in the presence of a
sufficiently strong North pole magnetic field sub­jected to the marked face.

Functional Diagram

Note: This is a static-sensitive device; please observe ESD precau­tions. Reverse VDD protection is not included. For reverse voltage
protection, a 100Ω resistor in series with VDD is recommended.

Output

GND

V

DD

Voltage

Regulator

Chopper

SO Package
Pin 1 - V

DD

Pin 2 - Output
Pin 3 - GND

UA Package

Pin 1 - V

DD

Pin 2 - GND
Pin 3 - Output

US5881 CMOS Multi-Purpose Switch 3901005881 Rev 5.0 24/July/01 Page 2

US5881

CMOS Multi-Purpose Switch

US5881 Electrical Specifications

Parameter Symbol Test Conditions Min Typ Max Units

Supply Voltage VDD Operating 3.5 24 V
Supply Current IDD B<BRP 1.5 2.5 4.0 mA
Saturation Voltage V

DS(on)

I

OUT

= 20 mA, B>BOP 0.4 0.5 V

Output Leakage I

OFF

B<BRP, V

OUT

= 20V 0.01 5.0 ì A
Output Rise Time tr VDD = 12V, RL = 1.1KÙ, CL = 20pf 0.04 ì s
Output Fall Time tf VDD = 12V, RL = 1.1KÙ, CL = 20pf 0.18 ì s

US5881 Magnetic Specifications

Parameter Symbol Test Conditions Min Typ Max Units

Operating Point3 BOP 15 25 30 mT
Release Point BRP 9.5 20 - mT
Hysteresis B

hys

2.0 4.3 5.5 mT

Melexis Inc. reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Melexis does
not assume any liability arising from the use of any product or application of any product or circuit described herein.

Notes:

1. 1 mT = 10 Gauss.

2. The SOT-23 device is reversed from the UA package. The SOT-23 output transistor will be switched
on (BOP) in the presence of a sufficiently strong North pole magnetic field subjected to the
markedface.

3. At –40ºC, maximum B

OP

= 35 mT.

Supply Voltage (Operating), VDD 24V
Supply Current (Fault), IDD 50mA
Output Voltage, V

OUT

24V

Output Current (Fault), I

OUT

50mA
Power Dissipation, PD 100mW
Operating Temperature Range, TA -40°C to 150°C
Storage Temperature Range, TS -65°C to 150°C
Maximum Junction Temp, TJ 175°C
ESD Sensitivity (All Pins) +/- 4KV

Absolute Maximum Ratings