MELEXIS US4881L, US4881E Datasheet

US4881

CMOS Low Voltage High Sensitivity Latch

Preliminary Datasheet

US4881 CMOS Low Voltage High Sensitivity Latch 3901004881 Rev 1.5 24/July/01 Page 1

Preliminary

Features and Benefits

• Chopper stabilized amplifier stage

• Optimized for BDC motor applications

• New miniature package / thin, high reliability package

• Operation down to 2.2V

• CMOS for optimum stability, quality, and cost

• Low IDD current

Applications

• Solid state switch

• Brushless DC motor commutation

• Speed sensing

Ordering Information

Part No. Temperature Suffix Package Temperature Range

US4881 E SO or UA -40 to 85oC Extended

US4881 L SO or UA -40 to 150oC Automotive

Contact factory or sales representative for legacy temperature code options

Functional Diagram

Note: Static sensitive device; please observe ESD precautions. Re­verse VDD protection is not included. For reverse voltage protec­tion, a 100Ω resistor in series with V

DD

is recommended.

Output

GND

V

DD

Voltage

Regulator

Chopper

SO Package
Pin 1 - V

DD

Pin 2 - Output
Pin 3 - GND

UA Package

Pin 1 - V

DD

Pin 2 - GND
Pin 3 - Output

Description

The US4881 is a bipolar Hall effect sensor IC fab­ricated from mixed signal CMOS technology. It
incorporates advanced chopper stabilization tech­niques to provide accurate and stable magnetic
switch points. There are many applications for
this HED in addition to those listed above. The
design specifications and performance have been
optimized for commutation applications in brush­less DC motors and automotive speed sensing.

The output transistor will be latched on (BOP) in
the presence of a sufficiently strong South pole
magnetic field facing the marked side of the pack­age. Similarly, the output will be latched off (BRP)
in the presence of a North field.

The SOT-23 device is reversed from the UA
package. The SOT-23 output transistor will be
latched on (BOP) in the presence of a sufficiently
strong North pole magnetic field subjected to the
marked face.

US4881 CMOS Low Voltage High Sensitivity Latch 3901004881 Rev 1.5 24/July/01 Page 2

US4881

CMOS Low Voltage High Sensitivity Latch

US4881 Electrical Specifications

DC operating parameters: TA = 25oC, VDD = 12VDC (unless otherwise specified).

Parameter Symbol Test Conditions Min Typ Max Units

Supply Voltage VDD Operating 2.2 18 V
Supply Current IDD B<BOP 1.5 2.5 4.0 mA

Saturation Voltage V

DS(on)

I

OUT

= 20 mA, B>BOP 0.4 0.5 V

Output Leakage I

OFF

B<BRP, V

OUT

= 18V 0.01 5.0 ì A
Output Rise Time tr VDD = 12V, RL = 1.1KÙ, CL = 20pf 0.04 ì s
Output Fall Time tf VDD = 12V, RL = 1.1KÙ, CL = 20pf 0.18 ì s

US4881 Magnetic Specifications

DC operating parameters: TA = 25oC, VDD =12 VDC (unless otherwise specified).

Parameter Symbol Test Conditions Min Typ Max Units

Operating Point BOP 0.5 2.0 4.5 mT
Release Point BRP -4.5 -2.0 -0.5 mT

Hysteresis B

hys

2.0 4.0 6.5 mT

Melexis Inc. reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Melexis does
not assume any liability arising from the use of any product or application of any product or circuit described herein.

Note: 1 mT = 10 Gauss.

Supply Voltage (Operating), VDD 18V
Supply Current (Fault), IDD 50mA
Output Voltage, V

OUT

18V

Output Current (Fault), I

OUT

50mA
Power Dissipation, PD 100mW
Operating Temperature Range, TA -40 to 150°C
Storage Temperature Range, TS -65 to 150°C
Maximum Junction Temp, TJ 175°C
ESD Sensitivity (All Pins) +/- 4KV

Absolute Maximum Ratings