Maxwell Technologies 7206F Technical data

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7206F
High-Speed Epi-CMOS (16K x 9-Bit)
I
7206F
FEATURES:
• 16K x 9-bit organization
•R
AD-PAK® radiation-hardened against natural space radia-
tion
• A total dose hardness:
- > 100 krad (Si), depending upon space mission
• Excellent Single Event Effect
- SEL
: > 100 MeV/mg/cm
TH
- SEUTH: = 7 MeV/mg/cm
- SEU saturated cross section: 1.5E-5 cm2/bit
• Asynchronous Read/Write operation
• High speed CMOS epi technology
• Retransmit capability
• Propagation time (max access time):
- 15 ns, 20 ns, 30 ns, 40 ns, 50 ns
• Status flag: empty, half-full, full
• Fully expandable in both word depth and width
• Bi-directional applications
• Low power
• Battery back-up operation
• TTL compatible
• Package: 28 pin R
AD-PAK® flat package
2
2
Logic Diagram
DESCRIPTION:
Maxwell Technologies’ 7206F high speed FIFO microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. It is organized such that the data is read in the same sequential order that it was written. Full and Empty flags are provided to prevent overflow and underflow. The expansion logic allows unlimited expansion capability in work size and depth with no timing penalties. Twin address pointers automatically generate internal read and write addresses, and automatically increment with the write and read pin. The 7206F 9-bits wide data are used in data communications applications where a parity bit for error checking is necessary. The retransmit capability allows the read pointer to be reset to its initial position without affecting the write pointer.
Maxwell Technologies' patented R ogy incorporates radiation shielding in the microcircuit pack­age. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, R krad (Si) radiation dose tolerance. This product is available with screening up to Class S.
AD-PAK® packaging technol-
AD-PAK provides greater than 100
Memory
1000572
(858) 503-3300- Fax: (858) 503-3301- www.maxwell.com
12.19.01 Rev 3
All data sheets are subject to change without notice
©2001 Maxwell Technologies
All rights reserved.
1
High-Speed Epi-CMOS (16K x 9-Bit) Parallel FIFO
TABLE 1. 7206F PINOUT DESCRIPTION
PIN SYMBOL DESCRIPTION
1WWrite Enable
2 - 6 I8, I3-I0 Inputs
7XI
Expansion In
7206F
8
FF
Full Flag
9 - 13 Q0 - Q3, Q8 Outputs
14 GND Ground
15 R
Read Enable
16 - 19 Q4 - Q7 Outputs
20 XO
21 EF
22 RS
23 FL
/HF Expansion Out/Half Full Flag
Empty Flag
Reset
/RT First Load/Retransmit
24 - 27 I7 - I4 Inputs
28 V
CC
Power Supply
TABLE 2. 7206F ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL MIN MAX UNIT
Positive Supply Voltage V
Input or Output Voltage V
Storage Temperature Range T
Operating Temperature Range T
CC
IN
S
A
-0.3 7.0 V
GND -0.3 V
+0.3 V
CC
-65 150
-55 125
°
C
°
C
Memory
TABLE 3. 7206F RECOMMENDED OPERATING CONDITIONS
PARAMETER SYMBOL MIN MAX UNIT
Positive Supply Voltage V
High Level Input Voltage V
Low Level Voltage V
Thermal Impedance
Operating Temperature Range T
1000572
12.19.01 Rev 3
CC
IH
IL
Θ
JC
A
All data sheets are subject to change without notice
4.5 5.5 V
2.2 -- V
-- 0.8 V
-- 0.93 °C/W
-55 125
©2001 Maxwell Technologies
All rights reserved.
°
C
2
High-Speed Epi-CMOS (16K x 9-Bit) Parallel FIFO
7206F
TABLE 4. 7206F DC ELECTRICAL CHARACTERISTICS
(VCC = 5V ± 10%, TA = -55 TO +125 °C UNLESS OTHERWISE SPECIFIED)
P
ARAMETER SYMBOL MIN MAX UNIT
Operating Supply Current
-15
-20
-30
-40
-50
Standby Supply Current (R
= W = RS = FLVRT = VIH)I
Power Down Current (All Input = V
Input Leakage Current (0.4V <
Output Leakage Current (R
Input Low Voltage
Input High Voltage
1
1
Output Low Voltage (V
Output High Voltage (V
+ 0.3V. V
CC
2
2
Input Capacitance
Output Capacitance
1. VIH max = V
VIN < VCC)I
= VIH, 0.4V < V
min, IOL = 8mA) V
CC
min, IOH = -2mA) V
CC
min = -0.3V or -1.0V pulse width 50 ns.
IL
2. Guaranteed by design.
I
CCOP
--
--
--
--
--
CCSB
)I
CC
< VCC)I
OUT
CCPD
V
V
C
C
LI
LO
IL
IH
OL
OH
IN
OUT
-- 5 mA
-- 400 µA
-- ±1 µA
-- ±1 µA
-- 0.8 V
2.2 -- V
-- 0.4 V
2.4 -- V
-- 10 pF
-- 10 pF
mA 165 160 150 140 130
Memory
TABLE 5. 7206F TIMING CHARACTERISTICS
1
(VCC = 5V ± 10%, TA = -55 TO +125 °C UNLESS OTHERWISE SPECIFIED)
P
ARAMETER SYMBOL MIN MAX UNITS
Read Cycle
Read Cycle Time
-15
-20
-30
-40
-50
Access Time
-15
-20
-30
-40
-50
1000572
12.19.01 Rev 3
t
RC
25 30 40 50 65
t
A
--
--
--
--
--
All data sheets are subject to change without notice
--
--
--
--
--
15 20 30 40 50
©2001 Maxwell Technologies
All rights reserved.
ns
ns
3
High-Speed Epi-CMOS (16K x 9-Bit) Parallel FIFO
7206F
TABLE 5. 7206F TIMING CHARACTERISTICS
1
(VCC = 5V ± 10%, TA = -55 TO +125 °C UNLESS OTHERWISE SPECIFIED)
P
ARAMETER SYMBOL MIN MAX UNITS
t
t
t
t
t
RR
RPW
RLZ
WLZ
t
DV
RHZ
10 10 10 10 15
15 20 30 40 50
--
--
--
--
--
--
--
--
--
--
0 0 5 5 5
3 3 5 5 5
5 5 5 5 5
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
15 15 20 25 30
Read Recovery Time
-15
-20
-30
-40
-50
Read Pulse Width
2
-15
-20
-30
-40
-50
Read Low to Data Low-Z
3
-15
-20
-30
-40
-50
Write HIGH to Data Low-Z
3,4
-15
-20
-30
-40
-50
Data Valid from Read High
-15
-20
-30
-40
-50
Read High to Data Bus High-Z
-15
-20
-30
-40
-50
3
ns
ns
ns
Memory
ns
ns
ns
1000572
12.19.01 Rev 3
All data sheets are subject to change without notice
©2001 Maxwell Technologies
All rights reserved.
4
High-Speed Epi-CMOS (16K x 9-Bit) Parallel FIFO
7206F
TABLE 5. 7206F TIMING CHARACTERISTICS
1
(VCC = 5V ± 10%, TA = -55 TO +125 °C UNLESS OTHERWISE SPECIFIED)
P
ARAMETER SYMBOL MIN MAX UNITS
Write Cycle
Write Cycle Time
-15
-20
-30
-40
-50
Write Pulse Width
2
-15
-20
-30
-40
-50
Write Recovery Time
-15
-20
-30
-40
-50
Data Set-up Time
-15
-20
-30
-40
-50
Data Hold Time
-15
-20
-30
-40
-50
t
WC
t
WPW
t
WR
t
t
DS
DH
25 30 40 50 65
15 20 30 40 50
10 10 10 10 15
12 18 24 30
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
9
--
--
--
--
--
0 0 0 0 5
--
--
--
--
--
ns
ns
ns
Memory
ns
ns
Reset Cycle
Reset Cycle Time
-15
-20
-30
-40
-50
Reset Pulse Width
-15
-20
-30
-40
-50
1000572
t
RSC
25 30 40 50 65
2
t
RS
15 20 30 40 50
12.19.01 Rev 3
All data sheets are subject to change without notice
--
--
--
--
--
--
--
--
--
--
©2001 Maxwell Technologies
ns
ns
5
All rights reserved.
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