MAXWELL 79C0832RT4QK20, 79C0832RT4QK15, 79C0832RT4QI20, 79C0832RT4QH20, 79C0832RT4QH15 Datasheet

1

Memory

All data sheets are subject to change without notice

(858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com

8 Megabit (256K x 32-Bit)

EEPROM MCM

79C0832

12.19.01 Rev 5

1000576

FEATURES:

• Eight 128k x 8-bit EEPROM MCM

•R

AD-PAK® radiation-hardened against natural space radia-

tion

• Total dose hardness:

- >100 krad (Si), depending upon space mission

• Excellent Single event effects

- SEL

TH

> 120 MeV/mg/cm

2

- SEU > 90 MeV/mg/cm2 read mode

- SEU = 18 MeV/mg/cm

2

write mode

• Package: 96 pin R

AD-PAK® quad flat pack

• High endurance

- 10,000 cycles/byte, 10 year data retention

• Page Write Mode: 1 to 8 X 128 byte page

• High Speed:

- 150 and 200 ns maximum access times

• Automatic programming

- 10 ms automatic Page/Byte write

• Low power dissipation

- 160 mW/MHz active current

- 880 µW standby current

DESCRIPTION:

Maxwell Technologies’ 79C0832 multi-chip module (MCM) memory features a greater than 100 krad (Si) total dose tolerance, depending upon space misssion. Using Maxwell Technologies’ patented radiation-hardened R

AD-PAK® MCM

packaging technology, the 79C0832 is the first radiation-hardened 8 megabit MCM EEPROM for space application. The 79C0832 uses eight 1 Megabit high speed CMOS die to yield an 8 megabit product. The 79C0832 is capable of in-system electrical byte and page programmability. It has a 128 x 8 byte page programming function to make its erase and write operations faster. It also features Data

Polling and a Ready/Busy signal to indicate the completion of erase and programming operations. In the 79C0832, hardware data protection is provided with the RES

pin, in addition to noise protection on the

WE

signal and write inhibit on power on and off. Software data protection is implemented using the JEDEC optional standard algorithm.

Maxwell Technologies' patented R

AD-PAK® packaging technol-

ogy incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, R

AD-PAK provides greater than 100

krad (Si) radiation dose tolerance. This product is available with screening up to Class K.

Logic Diagram

Memory

2

All data sheets are subject to change without notice

8 Megabit (256K x 32-Bit) EEPROM MCM

79C0832

12.19.01 Rev 5

1000576

TABLE 1. 79C0832 PINOUT DESCRIPTION

PIN SYMBOL DESCRIPTION

84-77, 29-37 ADDR0 to ADDR16 Address Input

48-55, 66-73, 96,

1-7, 18-25

I/O0 to I/O31 Data Input/Output

61 OE

Output Enable

41, 43 CE0-1

Chip Enable 0 through 1

36 WE

Write Enable

10, 17, 28, 40, 44,

58, 65, 76, 87, 93

5V Power Supply

8, 9, 10-16, 26, 27,

38, 42, 46, 56, 57,

59, 60, 62-64, 74, 75, 85, 86, 88-92,

94, 95

GND Ground

39 RDY/BUSY

Ready/Busy

47 RES

Reset

TABLE 2. 79C0832 ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL MIN MAX UNIT

Supply Voltage V

CC

-0.6 7.0 V

Input Voltage V

IN

-0.5

1

1. VIN min = -3.0V for pulse width <50ns.

7.0 V

Operating Temperature Range T

OPR

-55 125

°

C

Storage Temperature Range T

STG

-65 150

°

C

TABLE 3. 79C0832 RECOMMENDED DC OPERATING CONDITIONS

PARAMETER SYMBOL MIN MAX UNIT

Supply Voltage V

CC

4.5 5.5 V

Input Voltage

RES

_PIN

V

IL

V

IH

V

H

-0.3

1

2.2

V

CC

-0.5

1. V

IL

min = -1.0V for pulse width < 50 ns

0.8

V

CC

+0.3

V

CC

+1

V V V

Operating Temperature Range T

OPR

-55 125

°

C

Memory

3

All data sheets are subject to change without notice

8 Megabit (256K x 32-Bit) EEPROM MCM

79C0832

12.19.01 Rev 5

1000576

TABLE 4. 79C0832 CAPACITANCE

(TA = 25 °C, f = 1 MHz)

P

ARAMETER SYMBOL MIN MAX UNIT

Input Capacitance: VIN = 0V

1

1. Guaranteed by design.

C

IN

-- 6 pF

Output Capacitance: V

OUT

= 0V

1

C

OUT

-- 12 pF

TABLE 5. 79C0832 DC ELECTRICAL CHARACTERISTICS

(VCC = 5V ±10%, TA = -55 TO +125°C)

P

ARAMETER TEST CONDITION SYMBOL MIN MAX UNITS

Input Leakage Current (VCC = 5.5V, VIN = 5.5V) I

LI

-- 16

1

1. IIL on RES = 800 uA MAX.

µA

Output Leakage Current (VCC = 5.5V, V

OUT

= 5.5V/0.4V) I

LO

-- 16 µA

Standby V

CC

Current

CE

= V

CC

CE = V

IH

I

CC1

I

CC2

--

80

2

4

2

2. One CE Active.

µA mA

Operating V

CC

Current

I

OUT

= 0mA, Duty = 100%, Cycle = 1 us at

V

CC

= 5.5V

I

OUT

= 0mA, Duty = 100%, Cycle = 150 ns

at V

CC

= 5.5V

I

CC3

--

60

2

200

2

mA

Input Voltage

RES

_PIN

V

IL

V

IH

V

H

2.2

V

CC

-0.5

0.8 V V V

Output Voltage

Data Lines – V

CC

= Min, Iol = 2.1mA

RDYZ/BSY_Lines – V

CC

Min, Iol = 12mA

Data Lines – V

CC

= Min, Ioh = -400µA

RDYZ/BSY_Lines – V

CC

Min, Ioh = -12mA

V

OL

V

OL

V

OH

V

OH

--

2.4

3.15

0.4

--

V V V V

Memory

4

All data sheets are subject to change without notice

8 Megabit (256K x 32-Bit) EEPROM MCM

79C0832

12.19.01 Rev 5

1000576

TABLE 6. 79C0832 AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION

1

(VCC = 5V ±10%, TA = -55 TO +125°C)

1. Test conditions: input pulse levels = 0.4V to 2.4V; input rise and fall times <

20 ns; output load = 1 TTL gate + 100 pF (including

scope and jig); reference levels for measuring timing = 0.8 V/1.8 V.

P

ARAMETER SYMBOL MIN MAX UNIT

Address Access Time CE = OE = VIL, WE = V

IH

-150

-200

t

ACC

--

150 200

ns

Chip Enable Access Time OE

= VIL, WE = V

IH

-150

-200

t

CE

--

150 200

ns

Output Enable Access TIme CE

= VIL, WE = V

IH

-150

-200

t

OE

0 0

75

125

ns

Output Hold to Address Change CE

= OE =VIL, WE = V

IH

-150

-200

t

OH

0 0

--

ns

Output Disable to High-Z

2

CE = VIL, WE = V

IH

-150

-200

CE

= OE = VIL, WE = V

IH

-150

-200

2. t

DF

and t

DFR

are defined as the time at which the output becomes an open circuit and data is no longer driven.

t

DF

t

DFR

0 0

50 60

350 450

ns

RES

to Output Delay CE = OE = VIL, WE = V

IH

3

-150

-200

3. Guaranteed by design.

T

RR

0 0

450 650

ns

TABLE 7. 79C0832 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATION

(VCC = 5V ±10%, TA = -55 TO +125°C)

P

ARAMETER SYMBOL

MIN

1

MAX UNITS

Address Setup Time

-150

-200

t

AS

0 0

--

ns

Chip Enable to Write Setup Time (WE

controlled)

-150

-200

t

CS

0 0

--

ns

Memory

5

All data sheets are subject to change without notice

8 Megabit (256K x 32-Bit) EEPROM MCM

79C0832

12.19.01 Rev 5

1000576

Write Pulse Width CE

controlled

-150

-200

WE

controlled

-150

-200

t

CW

t

WP

250 350

--

ns

Address Hold Time

-150

-200

t

AH

150 200

--

ns

Data Setup Time

-150

-200

t

DS

120 200

--

ns

Data Hold Time

-150

-200

t

DH

10 20

--

ns

Chip Enable Hold Time (WE

controlled)

-150

-200

t

CH

0 0

--

ns

Write Enable to Write Setup Time (CE

controlled)

-150

-200

t

WS

0 0

--

ns

Write Enable Hold Time (CE

controlled)

-150

-200

t

WH

0 0

--

ns

Output Enable to Write Setup Time

-150

-200

t

OES

0 0

--

ns

Output Enable Hold Time

-150

-200

t

OEH

0 0

--

ns

Write Cycle Time

2

-150

-200

t

WC

--

10 20

ms

Data Latch Time

-150

-200

t

DL

300 400

--

ns

Byte Load Window

-150

-200

t

BL

100 200

--

µs

Byte Load Cycle

-150

-200

t

BLC

0.55

0.95

30 50

µs

TABLE 7. 79C0832 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATION

(VCC = 5V ±10%, TA = -55 TO +125°C)

P

ARAMETER SYMBOL

MIN

1

MAX UNITS