MAXWELL 7206FRPFB30, 7206FRPFB20, 7206FRPFB15, 7206FRPES50, 7206FRPES40 Datasheet

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1
Memory
All data sheets are subject to change without notice
(858) 503-3300- Fax: (858) 503-3301- www.maxwell.com
High-Speed Epi-CMOS (16K x 9-Bit)
7206F
©2001 Maxwell Technologies
All rights reserved.
12.19.01 Rev 3
1000572
I
7206F
FEATURES:
• 16K x 9-bit organization
•R
AD-PAK® radiation-hardened against natural space radia-
tion
• A total dose hardness:
- > 100 krad (Si), depending upon space mission
• Excellent Single Event Effect
- SEL
TH
: > 100 MeV/mg/cm
2
- SEUTH: = 7 MeV/mg/cm
2
- SEU saturated cross section: 1.5E-5 cm2/bit
• Asynchronous Read/Write operation
• High speed CMOS epi technology
• Retransmit capability
• Propagation time (max access time):
- 15 ns, 20 ns, 30 ns, 40 ns, 50 ns
• Status flag: empty, half-full, full
• Fully expandable in both word depth and width
• Bi-directional applications
• Low power
• Battery back-up operation
• TTL compatible
• Package: 28 pin R
AD-PAK® flat package
DESCRIPTION:
Maxwell Technologies’ 7206F high speed FIFO microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. It is organized such that the data is read in the same sequential order that it was written. Full and Empty flags are provided to prevent overflow and underflow. The expansion logic allows unlimited expansion capability in work size and depth with no timing penalties. Twin address pointers automatically generate internal read and write addresses, and automatically increment with the write and read pin. The 7206F 9-bits wide data are used in data communications applications where a parity bit for error checking is necessary. The retransmit capability allows the read pointer to be reset to its initial position without affecting the write pointer.
Maxwell Technologies' patented R
AD-PAK® packaging technol-
ogy incorporates radiation shielding in the microcircuit pack­age. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, R
AD-PAK provides greater than 100
krad (Si) radiation dose tolerance. This product is available with screening up to Class S.
Logic Diagram
Memory
2
All data sheets are subject to change without notice
©2001 Maxwell Technologies
All rights reserved.
High-Speed Epi-CMOS (16K x 9-Bit) Parallel FIFO
7206F
12.19.01 Rev 3
1000572
TABLE 1. 7206F PINOUT DESCRIPTION
PIN SYMBOL DESCRIPTION
1WWrite Enable
2 - 6 I8, I3-I0 Inputs
7XI
Expansion In
8
FF
Full Flag
9 - 13 Q0 - Q3, Q8 Outputs
14 GND Ground
15 R
Read Enable
16 - 19 Q4 - Q7 Outputs
20 XO
/HF Expansion Out/Half Full Flag
21 EF
Empty Flag
22 RS
Reset
23 FL
/RT First Load/Retransmit
24 - 27 I7 - I4 Inputs
28 V
CC
Power Supply
TABLE 2. 7206F ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL MIN MAX UNIT
Positive Supply Voltage V
CC
-0.3 7.0 V
Input or Output Voltage V
IN
GND -0.3 V
CC
+0.3 V
Storage Temperature Range T
S
-65 150
°
C
Operating Temperature Range T
A
-55 125
°
C
TABLE 3. 7206F RECOMMENDED OPERATING CONDITIONS
PARAMETER SYMBOL MIN MAX UNIT
Positive Supply Voltage V
CC
4.5 5.5 V
High Level Input Voltage V
IH
2.2 -- V
Low Level Voltage V
IL
-- 0.8 V
Thermal Impedance
Θ
JC
-- 0.93 °C/W
Operating Temperature Range T
A
-55 125
°
C
Memory
3
All data sheets are subject to change without notice
©2001 Maxwell Technologies
All rights reserved.
High-Speed Epi-CMOS (16K x 9-Bit) Parallel FIFO
7206F
12.19.01 Rev 3
1000572
TABLE 4. 7206F DC ELECTRICAL CHARACTERISTICS
(VCC = 5V ± 10%, TA = -55 TO +125 °C UNLESS OTHERWISE SPECIFIED)
P
ARAMETER SYMBOL MIN MAX UNIT
Operating Supply Current
-15
-20
-30
-40
-50
I
CCOP
--
--
--
--
--
165 160 150 140 130
mA
Standby Supply Current (R
= W = RS = FLVRT = VIH)I
CCSB
-- 5 mA
Power Down Current (All Input = V
CC
)I
CCPD
-- 400 µA
Input Leakage Current (0.4V <
VIN < VCC)I
LI
-- ±1 µA
Output Leakage Current (R
= VIH, 0.4V < V
OUT
< VCC)I
LO
-- ±1 µA
Input Low Voltage
1
1. VIH max = V
CC
+ 0.3V. V
IL
min = -0.3V or -1.0V pulse width 50 ns.
V
IL
-- 0.8 V
Input High Voltage
1
V
IH
2.2 -- V
Output Low Voltage (V
CC
min, IOL = 8mA) V
OL
-- 0.4 V
Output High Voltage (V
CC
min, IOH = -2mA) V
OH
2.4 -- V
Input Capacitance
2
2. Guaranteed by design.
C
IN
-- 10 pF
Output Capacitance
2
C
OUT
-- 10 pF
TABLE 5. 7206F TIMING CHARACTERISTICS
1
(VCC = 5V ± 10%, TA = -55 TO +125 °C UNLESS OTHERWISE SPECIFIED)
P
ARAMETER SYMBOL MIN MAX UNITS
Read Cycle
Read Cycle Time
-15
-20
-30
-40
-50
t
RC
25 30 40 50 65
--
--
--
--
--
ns
Access Time
-15
-20
-30
-40
-50
t
A
--
--
--
--
--
15 20 30 40 50
ns
Memory
4
All data sheets are subject to change without notice
©2001 Maxwell Technologies
All rights reserved.
High-Speed Epi-CMOS (16K x 9-Bit) Parallel FIFO
7206F
12.19.01 Rev 3
1000572
Read Recovery Time
-15
-20
-30
-40
-50
t
RR
10 10 10 10 15
--
--
--
--
--
ns
Read Pulse Width
2
-15
-20
-30
-40
-50
t
RPW
15 20 30 40 50
--
--
--
--
--
ns
Read Low to Data Low-Z
3
-15
-20
-30
-40
-50
t
RLZ
0 0 5 5 5
--
--
--
--
--
ns
Write HIGH to Data Low-Z
3,4
-15
-20
-30
-40
-50
t
WLZ
3 3 5 5 5
--
--
--
--
--
ns
Data Valid from Read High
-15
-20
-30
-40
-50
t
DV
5 5 5 5 5
--
--
--
--
--
ns
Read High to Data Bus High-Z
3
-15
-20
-30
-40
-50
t
RHZ
--
--
--
--
--
15 15 20 25 30
ns
TABLE 5. 7206F TIMING CHARACTERISTICS
1
(VCC = 5V ± 10%, TA = -55 TO +125 °C UNLESS OTHERWISE SPECIFIED)
P
ARAMETER SYMBOL MIN MAX UNITS
Memory
5
All data sheets are subject to change without notice
©2001 Maxwell Technologies
All rights reserved.
High-Speed Epi-CMOS (16K x 9-Bit) Parallel FIFO
7206F
12.19.01 Rev 3
1000572
Write Cycle
Write Cycle Time
-15
-20
-30
-40
-50
t
WC
25 30 40 50 65
--
--
--
--
--
ns
Write Pulse Width
2
-15
-20
-30
-40
-50
t
WPW
15 20 30 40 50
--
--
--
--
--
ns
Write Recovery Time
-15
-20
-30
-40
-50
t
WR
10 10 10 10 15
--
--
--
--
--
ns
Data Set-up Time
-15
-20
-30
-40
-50
t
DS
9 12 18 24 30
--
--
--
--
--
ns
Data Hold Time
-15
-20
-30
-40
-50
t
DH
0
0
0
0
5
--
--
--
--
--
ns
Reset Cycle
Reset Cycle Time
-15
-20
-30
-40
-50
t
RSC
25 30 40 50 65
--
--
--
--
--
ns
Reset Pulse Width
2
-15
-20
-30
-40
-50
t
RS
15 20 30 40 50
--
--
--
--
--
ns
TABLE 5. 7206F TIMING CHARACTERISTICS
1
(VCC = 5V ± 10%, TA = -55 TO +125 °C UNLESS OTHERWISE SPECIFIED)
P
ARAMETER SYMBOL MIN MAX UNITS
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