MAXWELL 54HC4050RPFI, 54HC4050RPFS, 54HC4050RPFE, 54HC4050RPFB Datasheet
54HC4050
CMOS Logic Hex
Non-Inverting Buffers
FEATURES:
• High speed CMOS logic hex non-inverting buffers
•R
AD-PAK® radiation hardened against natural space radia-
tion
• Single Event Effects:
- SEL: > 120 MeV/mg/cm2
• Total dose hardness:
• - > 100 Krad (Si), depending upon space mission
• Package:
-16 Pin R
• Typical propagation delay:
- 6ns at V
• High-to-Low voltage level converter for up to V
• Fanout (over temperature range)
-10 LSTTL loads (Standard Outputs)
-15 LSTTL loads (Bus Driver Outputs)
• Balanced propagation delay and transition times
• Significant power reduction compared to LSTTL logic ICs
• 2V to 6V operation
• High noise immunity
•-N
AD-PAK® Flat Pack
= 5V, CL = 15pF, TA = 25°C
CC
= 30%, NIH = 30% of VCC at VCC = 5V
IL
= 16V
I
Logic Diagram
DESCRIPTION:
Maxwell Technologies' 54HC4050 high speed CMOS Logic
Hex Non-Inverting Buffers features a greater than 100 krad(Si)
total dose tolerance, depending upon space mission. These
parts have a modified input protection structure that enables
them to be used as logic level translators which will convert
high-level logic to a low-level logic while operating off the lowlevel logic supply. For example, 15V input pulse levels can be
down-converted to 0V to 5V logic levels. The modified input
protection structure protects the input from negative electrostatic discharge. The 54HC4050 can be used as simple buffers or inverters without level translation.
Maxwell Technologies' patented R
ogy incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, R
krad (Si) radiation dose tolerance. This product is available
with screening up to Class S.
AD-PAK® packaging technol-
AD-PAK provides greater than 100
Memory
1000587
(858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com
12.19.01 Rev 1
All data sheets are subject to change without notice
©2001 Maxwell Technologies.
All rights reserved.
1
CMOS Logic Hex Non-Inverting Buffers
TABLE 1. 54HC4050 PINOUT DESCRIPTIONS
PIN SYMBOL DESCRIPTION
1VCCPower supply
8V
SS
13, 16 NC Not Connected
3, 5, 7, 9, 11, 14 A - F Inputs
2 G = A Buffered Output
4 H = B Buffered Output
6 I = C Buffered Output
10 J = D Buffered Output
12 K = E Buffered Output
15 L = F Buffered Output
Ground
54HC4050
Memory
TABLE 2. 54HC4050 ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL MIN MAX UNIT
Storage Temperature T
Operating Temperature Range T
DC Supply Voltage V
DC Input Diode Current
For V
< -0.5V or VI > VCC +0.5V
I
DC Output Diode Current
< -0.5V or VO > VCC +0.5V
For V
O
DC Output Source or Sink Current per Output Pin
For V
> -0.5V or VO < VCC +0.5V
O
or Ground Current ICC or I
DC V
CC
TABLE 3. DELTA LIMITS
PARAMETER VARIATION
I
CC
±10% of specified value in Table 5
S
A
CC
I
IK
I
OK
I
O
GND
-65 150 °C
-55 125 °C
-0.5 7.0 V
-20 +20 mA
-20 +20 mA
-25 +25 mA
-50 +50 mA
1000587
12.19.01 Rev 1
All data sheets are subject to change without notice
©2001 Maxwell Technologies.
All rights reserved.
2
CMOS Logic Hex Non-Inverting Buffers
TABLE 4. 54HC4050 RECOMMENDED OPERATING CONDITIONS
PARAMETER SYMBOL MIN MAX UNIT
54HC4050
Supply Voltage V
DC Input or output Voltage V
Input Rise and Fall Time
2V
4.5V
6V
Temperature Range T
TABLE 5. 54HC4050 DC ELECTRICAL CHARACTERISTICS
(VCC = 5V ±10%, TA = -55 TO 125°C, UNLESS OTHERWISE SPECIFIED)
P
ARAMETER SYMBOL TEST CONDITIONS MIN MAX UNIT
High Level Output Voltage
CMOS Loads
High Level Output Voltage
TTL Loads
Low Level Output Voltage
CMOS Loads
Low Level Output Voltage
TTL Loads
High Level Input Voltage V
Low Level Input Voltage V
Input Leakage Current I
V
V
VI = VIH or VIL, IO = -0.02mA
OH
V
= 2V
CC
V
= 4.5V
CC
V
= 6V
CC
V
= VIH or VIL, IO = -4mA
I
V
= 4.5V
CC
V
= VIH or VIL, IO = -5.2mA
I
V
= 6V
CC
VI = VIH or VIL, IO = -0.02mA
OL
V
= 2V
CC
V
= 4.5V
CC
V
= 6V
CC
V
= VIH or VIL, IO = 4mA
I
V
= 4.5V
CC
V
= VIH or VIL, IO = 5.2mA
I
V
= 6V
CC
VCC = 2V
IH
V
= 4.5V
CC
V
= 6V
CC
VCC = 2V
IL
V
= 4.5V
CC
V
= 6V
CC
VCC = 6V, VI = VCC or GND +25°C -- ±0.1 µA
I
V
= 6V, VI = 15V +25°C -- ±0.5
CC
I
, V
CC
26V
O
0VCCV
--
ns
1000
500
400
A
-55 125 °C
Memory
V
1.9
4.4
5.9
+25°C 3.98 --
-55 to 125°C 3.7
+25°C 5.48 --
-55 to 125°C 5.2 --
+25°C 0.26 --
-55 to 125°C 0.4 --
+25°C 0.36 --
-55 to 125°C 0.4 --
1.5
3.15
4.2
--
--
--
-55 to 125°C -- ±1
-55 to 125°C -- ±5
--
--
--
0.1
0.1
0.1
--
--
--
0.5
1.35
1.8
V
V
V
1000587
12.19.01 Rev 1
All data sheets are subject to change without notice
©2001 Maxwell Technologies.
All rights reserved.
3
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