Maxwell 28LV011 Technical data

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28LV011

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28LV011

3.3V 1 Megabit (128K x 8-Bit) EEPROM

FEATURES:

• 3.3V low voltage operation 128K x 8 Bit EEPROM

•R

AD-PAK® radiation-hardened against natural space

radiation

• Total dose hardness:

- > 100 krad (Si), depending upon space mission

• Excellent Single Event Effects:

- SEL

> 84 MeV/mg/cm

TH

- SEUTH > 37 Mev/mg/cm2 (read mode)

- SEU saturated cross section = 3E-6 cm

- SEU

= 11.4 Mev/mg/cm2 (write mode)

TH

- SEU saturated cross section = 5E-3 cm with hard errors

• Package:

- 32 Pin R

AD-PAK® flat pack AD-PAK® DIP

- JEDEC-approved byte-wide pinout

• Address Access Time:

- 200, 250 ns Access times available

• High endurance:

- 10,000 erase/write (in Page Mode), 10-year data retention

• Page write mode:

- 1 to 128 bytes

• Automatic programming

- 15 ms automatic page/byte write

• Low power dissipation

- 20 mW/MHz active current (typ.)

- 72 µW standby (maximum)

2

(read mode)

2

(write mode)

V

CC

V

SS

RES

OE

CE WE

RES

A0 A6

A7

A16

High Voltage

Generator

Control Logic Timing

Address

Buffer and

Latch

Y Decoder

X Decoder

I/O0 I/O7 RDY/Busy

I/O Buffer and

Input Latch

Y Gating

Memory Array

Data Latch

Logic Diagram

DESCRIPTION:

Maxwell Technologies’ 28LV011 high density, 3.3V, 1 Megabit EEPROM microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The 28LV011 is capable of in-system electrical Byte and Page programmability. It has a 128-Byte Page Programming function to make its erase and write operations faster. It also features Data

Polling and a Ready/Busy signal to indicate the completion of erase and programming operations. In the 28LV011, hardware data protection is provided with the RES tion to noise protection on the WE

signal and write inhibit on power on and off. Meanwhile, software data protection is implemented using the JEDEC-optional Standard algorithm. The 28LV011 is designed for high reliability in the most demanding space applications.

Maxwell Technologies' patented R

AD-PAK® packaging technol-

ogy incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, R

AD-PAK® provides greater than 100

krad (Si) radiation dose tolerance. This product is available with screening up to Class S.

Note:The recommended form of data protection during power on/off is to hold the RES

pin to VSS during power up and power down. This may be accompanied by connecting the RES to the CPU reset line. Failure to provide adequate protection during power on/off may result in lost or modified data.

pin, in addi-

(858) 503-3300 - Fax: (858) 503-3301- www.maxwell.com

05.28.02 Rev 2

All data sheets are subject to change without notice

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3.3V 1 Megabit (128K x 8-Bit) EEPROM

TABLE 1. 28LV011A PINOUT DESCRIPTION

PIN SYMBOL DESCRIPTION

28LV011

12-5, 27, 26, 23, 25,

4, 28, 3, 31, 2

13-15, 17-21 I/O0 - I/O7 Input/Output

24 OE 22 CE 29 WE 32 V 16 V

1 RDY/BUSY

30 RES

A0-A16 Address

CC SS

TABLE 2. 28LV011 ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL MIN MAX UNIT

Supply Voltage (Relative to Vss) V Input Voltage (Relative to Vss) V Operating Temperature Range T Storage Temperature Range T

Output Enable Chip Enable Write Enable Power Supply Ground Ready/Busy Reset

CC

IN OPR STG

-0.6 7.0 V

1

-0.5

-55 125 °C

-65 150 °C

7.0 V

1. VIN min = -3.0 V for pulse width < 50 ns.

ICC1 ±10%

2 ±10%

I

CC

3A ±10%

I

CC

I

3B ±10%

CC

TABLE 3. DELTA LIMITS

PARAMETER VARIATION

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3.3V 1 Megabit (128K x 8-Bit) EEPROM

TABLE 4. 28LV011 RECOMMENDED OPERATING CONDITIONS

PARAMETER SYMBOL MIN MAX UNIT

28LV011

Supply Voltage V Input Voltage

RES

_PIN

Operating Temperature Range T

min = -1.0 V for pulse width < 50 ns.

1. V

IL

2. V

min = 2.2 V for VCC = 3.6 V.

IH

TABLE 5. 28LV011 CAPACITANCE

(TA = 25° C, F = 1MHZ)

P

ARAMETER SYMBOL MIN MAX UNIT

OUT

1

= 0V

1

Input Capacitance: VIN = 0V Output Capacitance: V

1. Guaranteed by design.

TABLE 6. 28LV011 DC ELECTRICAL CHARACTERISTICS

(VCC = 3.3V ± 0.3, TA = -55 TO +125°C UNLESS OTHERWISE SPECIFIED)

CC

V

IL

V

IH

V

H

OPR

C

IN

C

OUT

3.0 3.6 V

1

-0.3

2

2.0

VCC-0.5

0.8 +0.3

V

CC

V

+1

CC

-55 +125 °C

-- 6 pF

-- 12 pF

V

P

ARAMETER TEST CONDITIONS SUBGROUPS SYMBOL MIN MAX UNIT

Input Leakage Current VCC = 3.6V, VIN = 3.6V 1, 2, 3 I Output Leakage Cur-

= 3.6V, V

V

CC

= 3.6V/0.4V 1, 2, 3 I

OUT

rent Standby V

Operating V

Current CE = V

CC

CE = V

Current I

CC

OUT

@ V I

OUT

CC IH

= 0mA, Duty = 100%, Cycle = 1 µs

= 3.3V

CC

= 0mA, Duty = 100%, Cycle = 250 ns @ VCC =

1, 2, 3 I

3.3V

Input Voltage 1, 2, 3 V

Output Voltage I

min = 2.2V for VCC = 3.6V.

1. V

IH

= 2.1 mA

OL

I

= -400 µA

OH

05.28.02 Rev 2

1, 2, 3 V

All data sheets are subject to change without notice

I

V

CC1 CC2

CC3

V

LI

LO

-- 2 µA

--

201µA

mA

6 15mA

--

OL OH

IL IH H

--

2.0

VCC-0.5

--

V

CC

1

x0.8

0.8

--

0.4

--

V

3

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3.3V 1 Megabit (128K x 8-Bit) EEPROM

28LV011

TABLE 7. 28LV011 AC CHARACTERISTICS FOR READ OPERATION

(VCC = 3.3V ± 10%, TA = -55 TO +125 °C UNLESS OTHERWISE SPECIFIED)

P

ARAMETER TEST CONDITIONS SUBGROUPS SYMBOL MIN MAX UNIT

Functional Test Verify Truth Table 7, 8A, 8B All Address Access Time

-200

-250

Chip Enable Access Time

-200

-250

Output Enable Access Time

-200

-250

Output Hold to Address Change

-200

-250

Output Disable to High-Z

2

-200

-250

Output Disable to High-Z

-200

-250 to Output Delay

RES

3

-200

-250

= OE = VIL, WE = V

CE

= VIL, WE = V

OE

= VIL, WE = VIH 9, 10, 11 t

CE

= OE = VIL, WE = V

CE

= VIL, WE = VIH

CE

= OE = VIL, WE = V

= VIL, WE = VIH

CE CE

= OE = VIL, WE = V

= OE = VIL WE = V

CE

IH

9, 10, 11 t

ACC

DFR

CE

OE

OH

DF

RR

1

ns

--

200 250

ns

--

200 250

ns 0 0

110 120

ns 0 0

--

-ns

0 0

50 50

ns

0 0

300 350

ns

0 0

525 550

1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20 ns; output load - 1 TTL gate + 100 pF (including scope and jig); reference levels for measuring timing - 0.8V/1.8V.

2. t

DF

and t

is defined as the time at which the output becomes an open circuit and data is no longer driven.

DFR

3. Guaranteed by design.

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TABLE 8. 28LV011 AC ELECTRICAL CHARACTERISTICS FOR ERASE AND WRITE OPERATIONS

(VCC = 3.3V ± 10%, TA = -55 TO +125 °C UNLESS OTHERWISE SPECIFIED)

P

ARAMETER SUBGROUPS SYMBOL MIN MAX UNIT

28LV011

Address Setup Time

-200

-250

Chip Enable to Write Setup Time (WE

-200

-250

Write Pulse Width (CE

-200

-250

Write Pulse Width (WE

-200

-250

Address Hold Time

-200

-250

Data Setup Time

-200

-250

Data Hold Time

-200

-250

Chip Enable Hold Time (WE

-200

-250

Write Enable to Write Setup Time (CE

-200

-250

controlled)

9, 10, 11 t

AS

CS

CW

WP

AH

DS

DH

CH

WS

0 0

200 250

125 150

100 100

10 10

0 0

ns

--

-ns

--

-ns

--

-ns

--

-ns

--

-ns

--

-ns

--

-ns

--

-ns

--

Write Enable Hold Time (CE

-200

-250

Output Enable to Write Setup Tim

-200

-250

Output Enable Hold Time

-200

-250

Write Cycle Time

-200

-250

1,2

controlled)

9, 10, 11 t

05.28.02 Rev 2

WH

OES

OEH

WC

All data sheets are subject to change without notice

0 0

--

15 15

ms

ns

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3.3V 1 Megabit (128K x 8-Bit) EEPROM

TABLE 8. 28LV011 AC ELECTRICAL CHARACTERISTICS FOR ERASE AND WRITE OPERATIONS

(VCC = 3.3V ± 10%, TA = -55 TO +125 °C UNLESS OTHERWISE SPECIFIED)

P

ARAMETER SUBGROUPS SYMBOL MIN MAX UNIT

28LV011

Byte Load Cycle

-200

-250

Data Latch Time

2

-200

-250

Byte Load Window

-200

-250

Time to Device Busy

-200

-250

Write Start Time

-200

-250

RES

to Write Setup Time

-200

-250 to RES Setup Time

V

CC

-200

-250

9, 10, 11 t

2

9, 10, 11 t

2

9, 10, 11 t

BLC

DL

BL

DB

DW

RP

RES

1 1

700 750

100 100

100 120

250 250

100 100

1 1

30 30

--

µs

ns

µs

ns

µs

must be longer than this value unless polling techniques or RDY/BSY are used. This device automatically completes the

1. t

WC

internal write operation within this value.

2. Guaranteed by design.

TABLE 9. 28LV011 MODE SELECTION

1,2

MODE CE OE WE RES RDY/BUSY I/O Read V

Standby V Write V Deselect V

IL IH IL IL

Write Inhibit X X V

XV

Data Polling V

IL

Program X X X V

V

IL

V

IH

V

H

High-Z D

X X X High-Z High-Z

V

IH

V

IH

IL

V

IL

V

IL

V

IH IH

V

H

V

H

High-Z --> V

OL

High-Z High-Z

X-- --

X X -- --

V

IH

V

H IL

V

OL

Data Out (I/O7)

High-Z High-Z

1. X = Don’t care.

2. Refer to the recommended DC operating conditions.

D

OUT

IN

05.28.02 Rev 2

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