Maxwell 28LV010 User Manual

M e

m

o

r

y

查询28LV010供应商

28LV010

3.3V 1 Megabit (128K x 8-Bit) EEPROM

FEATURES:

• 3.3V low voltage operation 128K x 8 Bit EEPROM

•R

AD-PAK® radiation-hardened against natural space

radiation

• Total dose hardness:

- > 100 krad (Si), depending upon space mission

• Excellent Single Event Effects:

-SEL

> 84 MeV/mg/cm

TH

-SEUTH> 37 Mev/mg/cm2(read mode)

- SEU saturated cross section = 3E-6 cm

-SEU

= 11.4Mev/mg/cm2(write mode)

TH

- SEU saturated cross section = 5E-3 cm with hard errors

• Package:

-32PinR

AD-PAK® flat pack AD-PAK®DIP

- JEDEC-approved byte-wide pinout

• Address Access Time:

- 200, 250 ns maximum access times available

• High endurance:

- 10,000 erase/write (in Page Mode), 10-year data retention

• Page write mode:

- 1 to 128 bytes

• Automatic programming

- 10 ms automatic page/byte write

• Low power dissipation

-20mW/MHzactivecurrent(typ.)

- 72 µWstandby(maximum)

2

(read mode)

2

(write mode)

V

CC

V

SS

RES

OE

CE

WE

RES

A0

A6

A7

A16

High Voltage

Generator

Control Logic Timing

Address

Buffer and

Latch

Y Decoder

X Decoder

I/O0 I/O7 RDY/Busy

I/O Buffer and

Input Latch

YGating

Memory Array

Data Latch

Logic Diagram

DESCRIPTION:

Maxwell Technologies’ 28LV010 high density,3.3V, 1 Megabit EEPROM microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The 28LV010iscapableof in-system electrical Byte and Page programmability.Ithasa128-Byte Page Programming function to make its erase and write operations faster. It also features Data

Polling and a Ready/Busy signal to indicate the completion of erase and programming operations. In the 28LV010, hardwaredataprotectionis provided with the RES tion to noise protection on the WE

signal and write inhibit on power on and off. Meanwhile, software data protection is implemented using the JEDEC-optional Standard algorithm. The 28LV010 is designed for high reliability in the most demanding space applications.

Maxwell Technologies'patentedR

AD-PAK® packaging technol-

ogy incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, R

AD-PAK provides greater than 100

krad (Si) radiation dose tolerance. This product is available with screening up to Class S.

pin,inaddi-

(858) 503-3300 - Fax: (858) 503-3301- www.maxwell.com

03.14.03 REV 6

All data sheets are subject to change without notice

Allrightsreserved.

1

M e

m

o

r

y

3.3V 1 Megabit (128K x 8-Bit) EEPROM

TABLE 1. 28LV010 PINOUT DESCRIPTION

PIN SYMBOL DESCRIPTION

28LV010

12-5,27,26,23,25,

4, 28, 3, 31, 2

13-15, 17-21 I/O0 - I/O7 Input/Output

24 22 29 32 V 16 V

1 RDY/BUSY

30

A0-A16 Address

OE Output Enable CE Chip Enable WE Write Enable

CC SS

RES Reset

Power Supply Ground Ready/Busy

TABLE 2. 28LV010 ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL MIN TYP MAX UNIT

Supply Voltage(Relative to Vss) V Input Voltage(Relative to Vss) V Package Weight RP 7.38 Grams

Thermal Impedence F Operating Temperature Range T Storage TemperatureRange T

CC

IN

RT 2.69 RD 10.97

JC OPR STG

-0.6 7.0 V

1

-0.5

2.17 ° C/W

-55 125 ° C

-65 150 ° C

7.0 V

1. VINmin = -3.0 V for pulse width < 50 ns.

I

CC1

I

CC2

I

CC3A

I

CC3B

1. Parameters are measured and recorded as Deltas per

MIL-STD-883 for Class S Devices

2. Specified in Table 6

TABLE 3. DELTA LIMITS

P

ARAMETER

03.14.03 REV 6

1

VARIATION

All data sheets are subject to change without notice

2

±10% ±10% ±10% ±10%

Allrightsreserved.

2

M e

m

o

r

y

3.3V 1 Megabit (128K x 8-Bit) EEPROM

TABLE 4. 28LV010 RECOMMENDED OPERATING CONDITIONS

PARAMETER SYMBOL MIN MAX UNIT

28LV010

Supply Voltage V Input Voltage

RES

_PIN

Operating Temperature Range T

min = -1.0 V for pulse width < 50 ns.

1. V

IL

2. V

min=2.2VforVCC=3.6V.

IH

TABLE 5. 28LV010 CAPACITANCE

(TA= 25°C, F = 1MHZ)

P

ARAMETER SYMBOL MIN MAX UNIT

OUT

1

=0V

1

Input Capacitance: VIN=0V Output Capacitance: V

1. Guaranteed by design.

TABLE 6. 28LV010 DC ELECTRICAL CHARACTERISTICS

(VCC= 3.3V ± 0.3, TA=-55TO +125°C UNLESS OTHERWISE SPECIFIED)

CC

V

IL

V

IH

V

H

OPR

C

IN

C

OUT

3.0 3.6 V

1

-0.3

2

2.0

VCC-0.5

0.8

V

+0.3

CC

V

+1

CC

-55 +125 °C

-- 6 pF

-- 12 pF

V

P

ARAMETER TEST CONDITIONS SYMBOL SUBGROUPS MIN MAX UNIT

Input Leakage Current VCC=3.6V,VIN=3.6V I OutputLeakageCurrent V Standby V

Operating V

Current CE =V

CC

Current I

CC

=3.6V,V

CC

CE =V

IH

= 0mA, Duty = 100%,

OUT

= 3.6V/0.4V I

OUT

Cycle=1µs@V I

= 0mA, Duty = 100%,

OUT

Cycle = 200 ns @ V

CC

=3.3V

CC

Input Voltage V

Output Voltage

3

I

=2.1mA

OL

I

=-0.4mA

OH

I

=-0.1mA

OH

1. ILIon RES = 100 uA max.

2. V

min = 2.2V for VCC=3.6V.

IH

3. Rdy/Bsy is an open collector output.

03.14.03 REV 6

1

20

1

I I

I

LI

LO

CC1 CC2

CC3

1, 2, 3 -- 2 1, 2, 3 -- 2 µA 1, 2, 3 --

--

1, 2, 3 --

-- 6 15

1, 2, 3 --

IL

V

IH

V

H

OL OH OH

1, 2, 3 --

V V V

All data sheets are subject to change without notice

2.0

VCC-0.5

V

x0.8

CC

V

-0.3

CC

2

0.8

--

0.4

--

µA

µA mA

mA

V

3

Allrightsreserved.

M e

m

o

r

y

3.3V 1 Megabit (128K x 8-Bit) EEPROM

28LV010

TABLE 7. 28LV010 AC CHARACTERISTICS FOR READ OPERATION

P

ARAMETER TEST CONDITIONS SYMBOL SUBGROUPS MIN MAX UNIT

Address Access Time

-200

-250

Chip Enable Access Time

-200

-250

Output Enable Access Time

-200

-250

Output Hold to Address Change

-200

-250

Output Disable to High-Z

-200

-250

Output Disable to High-Z

-200

-250 to Output Delay

RES

-200

-250

2

3

(VCC= 3.3V ± 10%, TA=-55TO +125 °C UNLESS OTHE RWISE SPECIFIED)

CE

=OE=VIL,WE=V

OE

=VIL,WE=V

CE

=OE=VIL,WE=V

CE

=VIL,WE=V

CE

=OE=VIL,WE=V

CE =OE=VILWE =V

IH

t

ACC

IH

t

CE

t

OE

t

OH

IH

t

DF

t

DFR

t

RR

IH

9, 10, 11

1

ns

--

0 0

200 250

ns 200 250

ns 110 120

ns

--

-ns

50 50

ns

300 350

ns

525 600

1. Testconditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20 ns; output load - 1 TTL gate + 100 pF(including scope and jig); reference levels for measuring timing - 0.8V/1.8V.

and t

2. t

DF

3. Guaranteed by design.

is defined as the time at which the output becomes an open circuit and data is no longer driven.

DFR

03.14.03 REV 6

All data sheets are subject to change without notice

4

Allrightsreserved.

M e

m

o

r

y

3.3V 1 Megabit (128K x 8-Bit) EEPROM

TABLE 8. 28LV010 AC ELECTRI CAL CHARACTE RI STICS FOR ERASE AND WRITE OPERATIONS

(VCC= 3.3V ± 10%, TA=-55TO +125 °C UNLESS OTHE RWISE SPECIFIED)

P

ARAMETER SYMBOL SUBGROUPS MIN MAX UNIT

28LV010

Address Setup Time

-200

-250

Chip Enable to Write Setup Time (WE

-200

-250

WritePulseWidth(CE

-200

-250

WritePulseWidth(WE

-200

-250

Address Hold Time

-200

-250

Data Setup Time

-200

-250

Data Hold Time

-200

-250

Chip Enable Hold Time (WE

-200

-250

WriteEnabletoWriteSetupTime(CE

-200

-250

controlled)

t

AS

t

CS

t

CW

t

WP

t

AH

t

DS

t

DH

t

CH

t

WS

9, 10, 11

0 0

200 250

125 150

100 100

10 10

0 0

ns

--

-ns

--

-ns

--

-ns

--

-ns

--

-ns

--

-ns

--

-ns

--

-ns

--

WriteEnableHoldTime(CE

-200

-250

Output Enable to Write Setup Tim

-200

-250

Output Enable Hold Time

-200

-250

Write Cycle Time

-200

-250

1,2

controlled)

t

WH

t

OES

t

OEH

t

WC

03.14.03 REV 6

9, 10, 11

0 0

9, 10, 11

0 0

9, 10, 11

0 0

9, 10, 11

--

All data sheets are subject to change without notice

--

15 15

ns

ms

5

Allrightsreserved.

M e

m

o

r

y

3.3V 1 Megabit (128K x 8-Bit) EEPROM

TABLE 8. 28LV010 AC ELECTRI CAL CHARACTE RI STICS FOR ERASE AND WRITE OPERATIONS

(VCC= 3.3V ± 10%, TA=-55TO +125 °C UNLESS OTHE RWISE SPECIFIED)

P

ARAMETER SYMBOL SUBGROUPS MIN MAX UNIT

28LV010

Byte Load Cycle

-200

-250

Data Latch Time

2

-200

-250

Byte Load Window

-200

-250

Timeto Device Busy

-200

-250

Write Start Time

-200

-250

RES

to Write Setup Time

-200

-250 to RES Setup Time

V

CC

-200

-250

t

BLC

t

DL

2

t

BL

t

DB

DW

t

RP

RES

9, 10, 11

1 1

700 750

100 100

100 120

150 250

100 100

1 1

µs 30 30

ns

-

µs

--

-ns

--

-ns

--

µs

--

µs

--

must be longer than this value unless polling techniques or RDY/BSY are used. This device automatically completes the

1. t

WC

internal write operation within this value.

2. Guaranteed by design.

TABLE 9. 28LV010 MODE SELECTION

1,2

MODE CE OE WE RES RDY/BUSY I/O Read V

Standby V Write V Deselect V

IL IH IL IL

Write Inhibit X X V

XV

Polling V

Data

IL

Program X X X V

V

IL

V

IH

V

H

High-Z D

X X X High-Z High-Z

V

IH

V

IH

IL

V

IL

V

IL

V

IH IH

V

H

V

H

High-Z --> V

OL

High-Z High-Z

X-- --

X X -- --

V

IH

V

H IL

V

OL

Data Out (I/O7)

High-Z High-Z

1. X = Don’t care.

2. Refer to the recommended D C operating conditions.

D

OUT

IN

03.14.03 REV 6

All data sheets are subject to change without notice

Allrightsreserved.

6

M e

m

o

r

y

3.3V 1 Megabit (128K x 8-Bit) EEPROM

FIGURE 1. READ TIMING WAVEFORM

28LV010

03.14.03 REV 6

All data sheets are subject to change without notice

Allrightsreserved.

7

M e

m

o

r

y

3.3V 1 Megabit (128K x 8-Bit) EEPROM

FIGURE 2. BYTE WRITE TIMING WAVEFORM(1) (WE CONTROLLED)

28LV010

03.14.03 REV 6

All data sheets are subject to change without notice

Allrightsreserved.

8

M e

m

o

r

y

3.3V 1 Megabit (128K x 8-Bit) EEPROM

FIGURE 3. BYTE WRITE TIMING WAVEFORM (2) (CE CONTROLLED)

28LV010

03.14.03 REV 6

All data sheets are subject to change without notice

Allrightsreserved.

9

M e

m

o

r

y

3.3V 1 Megabit (128K x 8-Bit) EEPROM

FIGURE 4. PAGE WRITE TIMING WAVEFORM(1) (WE CONTROLLED)

28LV010

03.14.03 REV 6

All data sheets are subject to change without notice

Allrightsreserved.

10

M e

m

o

r

y

3.3V 1 Megabit (128K x 8-Bit) EEPROM

FIGURE 5. PAGE WRITE TIMING WAVEFORM(2) (CE CONTROLLED)

28LV010

F

IGURE 6. SOFTWARE DATA PROTECTION TIMING WAVEFORM(1) (IN PROTECTION MODE)

03.14.03 REV 6

All data sheets are subject to change without notice

11

Allrightsreserved.

M e

m

o

r

y

3.3V 1 Megabit (128K x 8-Bit) EEPROM

FIGURE 7. SOFTWARE DATA PROTECTION TIMING WAVEFORM(2) (IN NON-PROTECTION MODE)

FIGURE 8. DATA POLLING TIMING WAVEFORM

28LV010

03.14.03 REV 6

All data sheets are subject to change without notice

Allrightsreserved.

12

M e

m

o

r

y

3.3V 1 Megabit (128K x 8-Bit) EEPROM

FIGURE 9. TOGGLE BIT WAVEFORM

28LV010

EEPROM APPLICATION NOTES

This application note describes the programming procedures for the EEPROM modules and with details of various techniquesto preserve data protection.

Automatic Page Write

Page-mode write feature allows 1 to 128 bytes of data to be written into the EEPROM in a single write cycle, and allows the undefined data within 128 bytes to be written corresponding to the undefined address (A0 to A6). Loading thefirst byte of data, the data load window opens 30 µs for the second byte. In the same mannereach additional byte of data can be loaded within 30 µs. In case CE eraseand write mode automatically and only the input data are written intothe EEPROM.

WE CEPin Operation

During a write cycle,addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of WE

or CE.

Data Polling

Data Polling function allows the status of the EEPROM to be determined. If EEPROM is set to read mode during a write cycle, an inversion of the last byte of data to be loaded outputs from I/O 7 to indicate that the EEPROM is performing a write operation.

RDY/BusySignal

RDY/Busy signal also allows a comparison operation to determine the status of the EEPROM. The RDY/Busy signal has high impedance except in write cycle and is lowered to V the RDY/Busy

signalchanges state to high impedance.

and WE are kept high for 100(s after data input, EEPROM enters

after the first write signal. At the-end of a write cycle,

OL

03.14.03 REV 6

All data sheets are subject to change without notice

Allrightsreserved.

13

M e

m

o

r

y

3.3V 1 Megabit (128K x 8-Bit) EEPROM

RES Signal

When RES is LOW, the EEPROM cannot be read and programmed. Therefore, data can be protected by keeping RES

low when VCCis switched. RES should be high during read and programming because it doesn’t provide a latch

function.

Data Protection

To protect the data during operation and power on/off,the EEPROM has the internal functions describedbelow.

28LV010

1. Data Protection against Noise of Control Pins (CE,OE,WE) during Operation. During readout or standby,noise on the control pins may act as a trigger and turn the EEPROM to programming mode by mis-

take.Topreventthis phenomenon, the EEPROM has a noise cancellationfunction that cuts noise if its widthis 20 ns or less in programming mode. Be careful not to allow noise of a width of more than 20 ns on the control pins.

2. Data Protection at V

CC

on/off

03.14.03 REV 6

All data sheets are subject to change without notice

Allrightsreserved.

14

M e

m

o

r

y

3.3V 1 Megabit (128K x 8-Bit) EEPROM

WhenVCCisturnedonoroff,noiseonthecontrolpinsgeneratedbyexternalcircuits,suchasCPUs,may turn the EEPROM to programming mode by mistake. To prevent this unintentional programming, the EEPROM must be kept in unprogrammable state during V

should be kept at VSSlevel when VCCis turned on oroff. The EEPROM breaks off programming operation when RES

RES become low,programming operation doesn’t finish correctly in case that RES falls low during programming operation. RES should be kept high for 10 ms after the last data input.

on/off by using a CPU reset signal to RES pin.

CC

28LV010

15ms min

3. Software Data Protection The software data protection function is to prevent unintentional programming caused by noise generated by external circuits.

In software data protection mode, 3 bytes of data must be input before write data as follows. These bytes can switch the nonprotection mode to the protection mode.

Softwaredataprotection mode can be canceled by inputting the following 6 bytes. Then, the EEPROM turns to the non-protection mode and can write data normally.However,when the data is input in the canceling cycle, the data cannot be written.

03.14.03 REV 6

All data sheets are subject to change without notice

Allrightsreserved.

15

M e

m

o

r

y

3.3V 1 Megabit (128K x 8-Bit) EEPROM

28LV010

32-PIN RAD-PAK®FLAT PACKAGE

SYMBOL DIMENSION

MIN NOM MAX

A 0.121 0.134 0.147

b 0.015 0.017 0.022

c 0.004 0.005 0.009 D -- 0.820 0.830 E 0.472 0.480 0.488

E1 -- -- 0.498 E2 0.304 0.310 -E3 0.030 0.085 --

e 0.050BSC

L 0.355 0.365 0.375 Q 0.020 0.035 0.045

S1 0.005 0.027 --

N32

Note: All dimensionsin inches

03.14.03 REV 6

All data sheets are subject to change without notice

Allrightsreserved.

16

M e

m

o

r

y

3.3V 1 Megabit (128K x 8-Bit) EEPROM

28LV010

32 PIN RAD-TOLERANT FLAT PACK

SYMBOL DIMENSION

MIN NOM MAX

A 0.095 0.109 0.125

b 0.015 0.017 0.022

c 0.004 0.005 0.009 D -- 0.820 0.830 E 0.472 0.480 0.488

E1 -- -- 0.498 E2 0.350 0.365 -E3 0.030 0.085 --

e 0.050BSC

L 0.355 0.365 0.375 Q 0.020 0.035 0.045

S1 0.005 0.027 --

N32

Note: All Dimentionsin Inches

03.14.03 REV 6

All data sheets are subject to change without notice

Allrightsreserved.

17

M e

m

o

r

y

3.3V 1 Megabit (128K x 8-Bit) EEPROM

28LV010

32 PIN DUAL IN-LINE PACKAGE

S

YMBOL

A -- 0.152 0.225

b 0.014 0.018 0.026

b2 0.045 0.050 0.065

c 0.008 0.010 0.018 D -- 1.600 1.680 E 0.510 0.590 0.620

eA 0.600 BSC

eA/2 0.300 BSC

e 0.100 BSC

L 0.135 0.145 0.155 Q 0.015 0.037 0.070

S1 0.005 0.025 -S2 0.005 -- --

N32

1. Standard Product Screening Flow MIL-STD-883, Method 2001, Constant Acceleration: For this package type Constant Acceleration is 3000g’s

MIN NOM MAX

1

DIMENSION

Note: All dimensionsin inches

03.14.03 REV 6

All data sheets are subject to change without notice

18

Allrightsreserved.

M e

m

o

r

y

3.3V 1 Megabit (128K x 8-Bit) EEPROM

ImportantNotice: These data sheets are created using the chip manufacturers published specifications. Maxwell Technologies verifies

functionalityby testing key parameterseither by 100% testing, sampletesting or characterization. The specifications presented within these data sheets represent the latest and most accurate information available to

date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no responsibilityfor the use of this information.

Maxwell Technologies’ products are not authorized for use as critical components in life support devices or systems withoutexpress written approvalfrom Maxwell Technologies.

Any claim against Maxwell Technologiesmust be made within 90 days from the date of shipment from Maxwell Technologies.Maxwell Technologies’ liability shall be limited to replacement of defectiveparts.

28LV010

03.14.03 REV 6

All data sheets are subject to change without notice

Allrightsreserved.

19

M e

m

o

r

y

3.3V 1 Megabit (128K x 8-Bit) EEPROM

Product Ordering Options

ModelNumber

28LV010

XX

X X

-XX

Feature

Access Time

Screening Flow

Package

Option Details

20 = 200 ns 25 = 250 ns

Monolithic S = Maxwell Class S B = Maxwell Class B I = Industrial (testing @ -55°C, +25°C, +125°C) E= Engineering(testing@+25°C)

D = Dual In-line Package (DIP) F=FlatPack

1

AD-PAK® package

Radiation Feature

Base Product Nomenclature

1.) Standard Product Screening Flow MIL-STD-883, Method 2001, Constant Acceleration :For DIP package type-

Constant Acceleration is 3000g’s.

03.14.03 REV 6

All data sheets are subject to change without notice

RP = R RT1 = Guaranteed to 10 krad at die level RT2 = Guaranteed to 25 krad at die level RT4 = Guaranteed to 40 krad at die level

3.3V 1 Megabit (128K x 8-Bit) EEPROM

20

Allrightsreserved.