Maxwell 28LV010 User Manual

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28LV010

3.3V 1 Megabit (128K x 8-Bit) EEPROM

FEATURES:

• 3.3V low voltage operation 128K x 8 Bit EEPROM

•R

AD-PAK® radiation-hardened against natural space

radiation

• Total dose hardness:

- > 100 krad (Si), depending upon space mission

• Excellent Single Event Effects:

-SEL

> 84 MeV/mg/cm

TH

-SEUTH> 37 Mev/mg/cm2(read mode)

- SEU saturated cross section = 3E-6 cm

-SEU

= 11.4Mev/mg/cm2(write mode)

TH

- SEU saturated cross section = 5E-3 cm with hard errors

• Package:

-32PinR

AD-PAK® flat pack AD-PAK®DIP

- JEDEC-approved byte-wide pinout

• Address Access Time:

- 200, 250 ns maximum access times available

• High endurance:

- 10,000 erase/write (in Page Mode), 10-year data retention

• Page write mode:

- 1 to 128 bytes

• Automatic programming

- 10 ms automatic page/byte write

• Low power dissipation

-20mW/MHzactivecurrent(typ.)

- 72 µWstandby(maximum)

2

(read mode)

2

(write mode)

V

CC

V

SS

RES

OE

CE

WE

RES

A0

A6

A7

A16

High Voltage

Generator

Control Logic Timing

Address

Buffer and

Latch

Y Decoder

X Decoder

I/O0 I/O7 RDY/Busy

I/O Buffer and

Input Latch

YGating

Memory Array

Data Latch

Logic Diagram

DESCRIPTION:

Maxwell Technologies’ 28LV010 high density,3.3V, 1 Megabit EEPROM microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The 28LV010iscapableof in-system electrical Byte and Page programmability.Ithasa128-Byte Page Programming function to make its erase and write operations faster. It also features Data

Polling and a Ready/Busy signal to indicate the completion of erase and programming operations. In the 28LV010, hardwaredataprotectionis provided with the RES tion to noise protection on the WE

signal and write inhibit on power on and off. Meanwhile, software data protection is implemented using the JEDEC-optional Standard algorithm. The 28LV010 is designed for high reliability in the most demanding space applications.

Maxwell Technologies'patentedR

AD-PAK® packaging technol-

ogy incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, R

AD-PAK provides greater than 100

krad (Si) radiation dose tolerance. This product is available with screening up to Class S.

pin,inaddi-

(858) 503-3300 - Fax: (858) 503-3301- www.maxwell.com

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3.3V 1 Megabit (128K x 8-Bit) EEPROM

TABLE 1. 28LV010 PINOUT DESCRIPTION

PIN SYMBOL DESCRIPTION

28LV010

12-5,27,26,23,25,

4, 28, 3, 31, 2

13-15, 17-21 I/O0 - I/O7 Input/Output

24 22 29 32 V 16 V

1 RDY/BUSY

30

A0-A16 Address

OE Output Enable CE Chip Enable WE Write Enable

CC SS

RES Reset

Power Supply Ground Ready/Busy

TABLE 2. 28LV010 ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL MIN TYP MAX UNIT

Supply Voltage(Relative to Vss) V Input Voltage(Relative to Vss) V Package Weight RP 7.38 Grams

Thermal Impedence F Operating Temperature Range T Storage TemperatureRange T

CC

IN

RT 2.69 RD 10.97

JC OPR STG

-0.6 7.0 V

1

-0.5

2.17 ° C/W

-55 125 ° C

-65 150 ° C

7.0 V

1. VINmin = -3.0 V for pulse width < 50 ns.

I

CC1

I

CC2

I

CC3A

I

CC3B

1. Parameters are measured and recorded as Deltas per

MIL-STD-883 for Class S Devices

2. Specified in Table 6

TABLE 3. DELTA LIMITS

P

ARAMETER

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VARIATION

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±10% ±10% ±10% ±10%

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3.3V 1 Megabit (128K x 8-Bit) EEPROM

TABLE 4. 28LV010 RECOMMENDED OPERATING CONDITIONS

PARAMETER SYMBOL MIN MAX UNIT

28LV010

Supply Voltage V Input Voltage

RES

_PIN

Operating Temperature Range T

min = -1.0 V for pulse width < 50 ns.

1. V

IL

2. V

min=2.2VforVCC=3.6V.

IH

TABLE 5. 28LV010 CAPACITANCE

(TA= 25°C, F = 1MHZ)

P

ARAMETER SYMBOL MIN MAX UNIT

OUT

1

=0V

1

Input Capacitance: VIN=0V Output Capacitance: V

1. Guaranteed by design.

TABLE 6. 28LV010 DC ELECTRICAL CHARACTERISTICS

(VCC= 3.3V ± 0.3, TA=-55TO +125°C UNLESS OTHERWISE SPECIFIED)

CC

V

IL

V

IH

V

H

OPR

C

IN

C

OUT

3.0 3.6 V

1

-0.3

2

2.0

VCC-0.5

0.8

V

+0.3

CC

V

+1

CC

-55 +125 °C

-- 6 pF

-- 12 pF

V

P

ARAMETER TEST CONDITIONS SYMBOL SUBGROUPS MIN MAX UNIT

Input Leakage Current VCC=3.6V,VIN=3.6V I OutputLeakageCurrent V Standby V

Operating V

Current CE =V

CC

Current I

CC

=3.6V,V

CC

CE =V

IH

= 0mA, Duty = 100%,

OUT

= 3.6V/0.4V I

OUT

Cycle=1µs@V I

= 0mA, Duty = 100%,

OUT

Cycle = 200 ns @ V

CC

=3.3V

CC

Input Voltage V

Output Voltage

3

I

=2.1mA

OL

I

=-0.4mA

OH

I

=-0.1mA

OH

1. ILIon RES = 100 uA max.

2. V

min = 2.2V for VCC=3.6V.

IH

3. Rdy/Bsy is an open collector output.

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20

1

I I

I

LI

LO

CC1 CC2

CC3

1, 2, 3 -- 2 1, 2, 3 -- 2 µA 1, 2, 3 --

--

1, 2, 3 --

-- 6 15

1, 2, 3 --

IL

V

IH

V

H

OL OH OH

1, 2, 3 --

V V V

All data sheets are subject to change without notice

2.0

VCC-0.5

V

x0.8

CC

V

-0.3

CC

2

0.8

--

0.4

--

µA

µA mA

mA

V

3

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3.3V 1 Megabit (128K x 8-Bit) EEPROM

28LV010

TABLE 7. 28LV010 AC CHARACTERISTICS FOR READ OPERATION

P

ARAMETER TEST CONDITIONS SYMBOL SUBGROUPS MIN MAX UNIT

Address Access Time

-200

-250

Chip Enable Access Time

-200

-250

Output Enable Access Time

-200

-250

Output Hold to Address Change

-200

-250

Output Disable to High-Z

-200

-250

Output Disable to High-Z

-200

-250 to Output Delay

RES

-200

-250

2

3

(VCC= 3.3V ± 10%, TA=-55TO +125 °C UNLESS OTHE RWISE SPECIFIED)

CE

=OE=VIL,WE=V

OE

=VIL,WE=V

CE

=OE=VIL,WE=V

CE

=VIL,WE=V

CE

=OE=VIL,WE=V

CE =OE=VILWE =V

IH

t

ACC

IH

t

CE

t

OE

t

OH

IH

t

DF

t

DFR

t

RR

IH

9, 10, 11

1

ns

--

0 0

200 250

ns 200 250

ns 110 120

ns

--

-ns

50 50

ns

300 350

ns

525 600

1. Testconditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20 ns; output load - 1 TTL gate + 100 pF(including scope and jig); reference levels for measuring timing - 0.8V/1.8V.

and t

2. t

DF

3. Guaranteed by design.

is defined as the time at which the output becomes an open circuit and data is no longer driven.

DFR

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3.3V 1 Megabit (128K x 8-Bit) EEPROM

TABLE 8. 28LV010 AC ELECTRI CAL CHARACTE RI STICS FOR ERASE AND WRITE OPERATIONS

(VCC= 3.3V ± 10%, TA=-55TO +125 °C UNLESS OTHE RWISE SPECIFIED)

P

ARAMETER SYMBOL SUBGROUPS MIN MAX UNIT

28LV010

Address Setup Time

-200

-250

Chip Enable to Write Setup Time (WE

-200

-250

WritePulseWidth(CE

-200

-250

WritePulseWidth(WE

-200

-250

Address Hold Time

-200

-250

Data Setup Time

-200

-250

Data Hold Time

-200

-250

Chip Enable Hold Time (WE

-200

-250

WriteEnabletoWriteSetupTime(CE

-200

-250

controlled)

t

AS

t

CS

t

CW

t

WP

t

AH

t

DS

t

DH

t

CH

t

WS

9, 10, 11

0 0

200 250

125 150

100 100

10 10

0 0

ns

--

-ns

--

-ns

--

-ns

--

-ns

--

-ns

--

-ns

--

-ns

--

-ns

--

WriteEnableHoldTime(CE

-200

-250

Output Enable to Write Setup Tim

-200

-250

Output Enable Hold Time

-200

-250

Write Cycle Time

-200

-250

1,2

controlled)

t

WH

t

OES

t

OEH

t

WC

03.14.03 REV 6

9, 10, 11

0 0

9, 10, 11

0 0

9, 10, 11

0 0

9, 10, 11

--

All data sheets are subject to change without notice

--

15 15

ns

ms

5

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3.3V 1 Megabit (128K x 8-Bit) EEPROM

TABLE 8. 28LV010 AC ELECTRI CAL CHARACTE RI STICS FOR ERASE AND WRITE OPERATIONS

(VCC= 3.3V ± 10%, TA=-55TO +125 °C UNLESS OTHE RWISE SPECIFIED)

P

ARAMETER SYMBOL SUBGROUPS MIN MAX UNIT

28LV010

Byte Load Cycle

-200

-250

Data Latch Time

2

-200

-250

Byte Load Window

-200

-250

Timeto Device Busy

-200

-250

Write Start Time

-200

-250

RES

to Write Setup Time

-200

-250 to RES Setup Time

V

CC

-200

-250

t

BLC

t

DL

2

t

BL

t

DB

DW

t

RP

RES

9, 10, 11

1 1

700 750

100 100

100 120

150 250

100 100

1 1

µs 30 30

ns

-

µs

--

-ns

--

-ns

--

µs

--

µs

--

must be longer than this value unless polling techniques or RDY/BSY are used. This device automatically completes the

1. t

WC

internal write operation within this value.

2. Guaranteed by design.

TABLE 9. 28LV010 MODE SELECTION

1,2

MODE CE OE WE RES RDY/BUSY I/O Read V

Standby V Write V Deselect V

IL IH IL IL

Write Inhibit X X V

XV

Polling V

Data

IL

Program X X X V

V

IL

V

IH

V

H

High-Z D

X X X High-Z High-Z

V

IH

V

IH

IL

V

IL

V

IL

V

IH IH

V

H

V

H

High-Z --> V

OL

High-Z High-Z

X-- --

X X -- --

V

IH

V

H IL

V

OL

Data Out (I/O7)

High-Z High-Z

1. X = Don’t care.

2. Refer to the recommended D C operating conditions.

D

OUT

IN

03.14.03 REV 6

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