MAXWELL 28C256TRT4FS15, 28C256TRT4FS12, 28C256TRT4FI15, 28C256TRT4FI12, 28C256TRT4FE15 Datasheet

1

Memory

All data sheets are subject to change without notice

(858) 503-3300 - Fax: (858) 503-3301- www.maxwell.com

256K EEPROM (32K x 8-Bit)

28C256T

EEPROM

12.19.01 Rev 5

1000584

FEATURES:

•RAD-PAK® radiation-hardened against natural space radia- tion

• Total dose hardness:

- > 100 Krad (Si), dependent upon space mission

• Excellent Single Event Effects:

- SEL

TH

LET: > 120 MeV/mg/cm

2

- SEUTH LET (read mode): > 90 MeV/mg/cm

2

- SEUTH LET (write mode): > 18 MeV/mg/cm

2

• Package:

- 28 pin R

AD-PAK® flat pack

- 28 pin R

AD-PAK® DIP

- JEDEC approved byte wide pinout

• High Speed:

- 120, 150 ns maximum access times available

• High endurance:

- 10,000 erase/write (in Page Mode), 10-year data

retention

• Page Write Mode:

- 1 to 64 bytes

• Low power dissipation:

- 15 mA active current (cycle = 1 µs)

- 20 µA standby current (CE

= VCC)

DESCRIPTION:

Maxwell Technologies’ 28C256T high density 256k-bit EEPROM microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The 28C256T is capable of in-system electrical byte and page programmability. It has a 64-Byte page programming function to make its erase and write operations faster. It also features data

polling to indicate the completion of erase and program-

ming operations.

Maxwell Technologies' patented R

AD-PAK® packaging technol-

ogy incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, R

AD-PAK provides greater than 100

krad (Si) radiation dose tolerance. This product is available with screening up to Class S.

OE, CE, and WE

LOGIC

Y DECODER

X DECODER

DATA LATCH

INPUT/OUTPUT

BUFFERS

Y-GATING

CELL MATRIX

IDENTIFICATION

OE

WE

CE

ADDRESS

INPUTS

V

CC

GND

DATA INPUTS/OUTPU

T

I/O0 - I/O7

Logic Diagram

Memory

2

All data sheets are subject to change without notice

256K EEPROM (32K x 8-Bit) EEPROM

28C256T

12.19.01 Rev 5

1000584

*Refer to diagram on Page 1 for pin relationship.

TABLE 1. 28C256T PINOUT DESCRIPTION

PIN SYMBOL DESCRIPTION

*10-3, 25, 24,

21, 23, 2, 26, 1

A0-A14 Address

11-13, 15-19 I/O0-I/O7 Input/Output

22 OE

Output Enable

20 CE

Chip Enable

27 WE

Write Enable

28 V

CC

Power Supply

14 V

SS

Ground

TABLE 2. 28C256T ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL MIN MAX UNITS

Supply Voltage (Relative to VSS)V

CC

-0.6 7.0 V

Input Voltage (Relative to V

SS

)V

IN

-0.5

1

1. VIN = -3.0 V for pulse width > 50 ns.

7.0 V

Operating Temperature Range

2

2. Including electrical characteristics and data retention.

T

OPR

-55 125

°

C

Storage Temperature Range T

STG

-65 150

°

C

TABLE 3. 28C256T DELTA LIMITS

PARAMETER VARIATION

ICC1 ±10%

I

CC

2 ±10%

I

CC

3A ±10%

I

CC

3B ±10%

Memory

3

All data sheets are subject to change without notice

256K EEPROM (32K x 8-Bit) EEPROM

28C256T

12.19.01 Rev 5

1000584

TABLE 4. 28C256T RECOMMENDED OPERATING CONDITIONS

PARAMETER SYMBOL MIN MAX UNITS

Supply Voltage V

CC

4.5 5.5 V

Input Voltage V

IL

V

IH

V

H

-0.3

1

2.2

V

CC

-0.5

1. V

IL

min= -1.0V for pulse width < 50 ns.

0.8

V

CC

+0.3

V

CC

+1

V V V

Thermal Impedance — Flat Package

Θ

JC

-- 0.87 °C/W

Thermal Impedance — DIP Package

Θ

JC

-- 0.86 °C/W

Operating Temperature Range T

OPR

-55 125

°

C

TABLE 5. 28C256T CAPACITANCE

(TA = 25 °C, f = 1 MHz)

P

ARAMETER SYMBOL MIN MAX UNITS

Input Capacitance: VIN = 0V

1

1. Guaranteed by design.

C

IN

-- 6 pF

Output Capacitance: V

OUT

= 0V

1

C

OUT

-- 12 pF

TABLE 6. 28C256T DC ELECTRICAL CHARACTERISTICS

(VCC = 5 V ± 10%, TA = -55 TO +125 °C UNLESS OTHERWISE SPECIFIED)

P

ARAMETER CONDITIONS SYMBOL MIN MAX UNITS

Input Leakage Current VCC = 5.5 V, VIN = 5.5 V I

LI

-- 2 uA

Output Leakage Current V

CC

= 5.5 V, V

OUT

= 5.5 V/0.4 V I

LO

-- 2 uA

Standby V

CC

Current CE = V

CC

I

CC1

-- 20 uA

CE

= V

IH

I

CC2

-- 1 mA

Operating V

CC

Current I

OUT

= 0 mA Duty = 100%

V

CC

= 5.5 V Cycle = 1 us

I

CC3

-- 15 mA

I

OUT

= 0mA Duty = 100%

V

CC

= 5.5 V Cycle = 150 ns

-- 50

Input Low Voltage V

IL

-- 0.8 V

Input High Voltage V

IH

2.2 -- V

V

H

VCC -0.5 -- V

Output Low Voltage I

LO

= 2.1 mA V

OL

-- 0.4 V

Output High Voltage I

OH

= -400 uA V

OH

2.4 -- V

Memory

4

All data sheets are subject to change without notice

256K EEPROM (32K x 8-Bit) EEPROM

28C256T

12.19.01 Rev 5

1000584

TABLE 7. 28C256T AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION

1

(VCC = 5V ±10%, TA = -55 TO 125 °C UNLESS OTHERWISE SPECIFIED)

1. Test conditions: Input pulse levels - 0V to 3V; input rise and fall times < 20 ns; output load - 1 TTL gate + 100 pF (including scope and jig); reference levels for measuring timing - 0.8V/1.8V.

P

ARAMETER SYMBOL MIN MAX UNITS

Address Access Time CE = OE = VIL, WE = VIH

-120

-150

t

ACC

--

120 150

ns

CE

to Output Delay OE = VIL, WE = VIH

-120

-150

t

CE

--

120 150

ns

OE

to Output Delay CE = VIL, WE = VIH

-120

-150

t

OE

0 0

50 75

ns

Output Hold from Address CE

= OE = VIL, WE = VIH

-120

-150

t

OH

0 0

--

ns

OE

(CE) High to Output Float CE = VIL, WE = VIH

2

-120

-150

2. t

DF

and t

DFR

are defined as the time at which the output becomes an open circuit and data is no longer driven.

t

DF

0 0

45 50

ns

TABLE 8. 28C256T AC ELECTRICAL CHARACTERISTICS FOR PAGE/BYTE ERASE AND WRITE OPERATIONS

(VCC = 5V ±10%, TA = -55 TO 125 °C UNLESS OTHERWISE SPECIFIED)

PARAMETER SYMBOL

MIN

1

TYP MAX UNITS

Address Setup Time

-120

-150

t

AS

0 0

--

ns

CE

to Write Setup Time

-120

-150

t

CS

2

0 0

--

ns

WE

to Write Setup Time

-120

-150

t

WS

3

0 0

--

ns

WE

Hold Time

-120

-150

t

WH

3

0 0

--

ns

Memory

5

All data sheets are subject to change without notice

256K EEPROM (32K x 8-Bit) EEPROM

28C256T

12.19.01 Rev 5

1000584

WE Pulse Width

-120

-150

CE

Pulse Width

-120

-150

t

WP

2

t

CW

3

200 250

--

ns

Address Hold Time

-120

-150

t

AH

150 150

--

ns

Data Setup Time

-120

-150

t

DS

75

100

--

ns

Data Hold Time

-120

-150

t

DH

10 10

--

ns

Chip Enable Hold Time

2

-120

-150

t

CH

0 0

--

ns

Output Enable to Write Setup Time

-120

-150

t

OES

0 0

--

ns

Output Enable Hold Time

-120

-150

t

OEH

0 0

--

ns

Data Latch Time

4

-120

-150

t

DL

--

230 280

--

ns

Write Cycle Time

-120

-150

t

WC

--

10 10

ms

Byte Load Window

4

-120

-150

t

BL

--

100 100

--

us

Byte Load Cycle

4

-120

-150

t

BLC

0.55

--

30 30

us

Write Start Time

-120

-150

t

DW

120 150

--

ns

1. Use this device in a longer cycle than this value.

2. WE controlled operation.

3. CE

controlled operation.

4. Not tested.

TABLE 8. 28C256T AC ELECTRICAL CHARACTERISTICS FOR PAGE/BYTE ERASE AND WRITE OPERATIONS

(VCC = 5V ±10%, TA = -55 TO 125 °C UNLESS OTHERWISE SPECIFIED)

PARAMETER SYMBOL

MIN

1

TYP MAX UNITS