MAXWELL 28C011TRPFB15, 28C011TRPFB12, 28C011TRT2FI15, 28C011TRT2FI12, 28C011TRT2FE20 Datasheet

1

Memory

All data sheets are subject to change without notice

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1 Megabit (128K x 8-Bit) EEPROM

28C011T

©2001 Maxwell Technologies

All rights reserved.

12.19.01 Rev 7

1000580

FEATURES:

• 128k x 8-bit EEPROM

•R

AD-PAK® radiation hardened against natural space radia-

tion

• Total dose hardness:

- > 100 krad (Si), depending upon space mission

• Excellent Single Event Effects:

- No Latchup > 120 MeV/mg/cm

2

- SEU > 90 MeV/mg/cm

2

read mode

• Package:

- 32-pin R

AD-PAK® flat pack package

- JEDEC-approved byte-wide pinout

• High speed:

- 120, 150, and 200 ns maximum access times available

• High endurance:

- 10,000 cycles/byte, 10-year data retention

• Page write mode:

- 1 to 128 byte page

• Low power dissipation

- 20 mW/MHz active (typical)

- 110 µW standby (maximum)

• Screening per TM 5004

• QCI per TM5005

DESCRIPTION:

Maxwell Technologies’ 28C011T high-density 1 Megabit

(128K x 8-Bit) EEPROM microcircuit features a greater than
100 krad (Si) total dose tolerance, depending upon space mis­sion. The 28C011T is capable of in-system electrical byte and
page programmability. It has a 128-byte page programming
function to make its erase and write operations faster. It also
features Data

Polling and a Ready / Busy signal to indicate the
completion of erase and programming operations. In the
28C011T, hardware data protection is provided with the RES
pin, in addition to noise protection on the WE signal and write
inhibit on power on and off. Software data protection is imple­mented using the JEDEC optional standard algorithm.

Maxwell Technologies' patented RAD-PAK® packaging tech­nology incorporates radiation shielding in the microcircuit
package. It eliminates the need for box shielding while provid­ing the required radiation shielding for a lifetime in orbit or
space mission. In a GEO orbit, R

AD-PAK provides greater than

100 krad (Si) radiation dose tolerance. This product is avail­able with screening up to Class S.

High Voltage

Generator

Control Logic Timing

Address

Buffer and

Latch

Y Decoder

X Decoder

Y Gating

Memory Array

I/O Buffer and

Input Latch

Data Latch

V

CC

V

SS

RES

OE

CE

WE

RES

A0

A6

A7

A16

I/O0 I/O7 RDY/Busy

Logic Diagram

Memory

2

All data sheets are subject to change without notice

©2001 Maxwell Technologies

All rights reserved.

1 Megabit (128K x 8-Bit) EEPROM

28C011T

12.19.01 Rev 7

1000580

TABLE 1. 28C011T PINOUT DESCRIPTION

PIN SYMBOL DESCRIPTION

12-4, 27, 26, 23,

25, 4,28, 3, 31, 2

A0-A16 Address

13-21 I/O 0 - 7 Data Input/Output

24 OE

Output Enable

22 CE

Chip Enable

29 WE

Write Enable

32 V

CC

Power Supply

16 V

SS

Ground

1 RDY/BUSY

Ready/Busy

30 RES

Reset

TABLE 2. 28C011T ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL MIN MAX UNITS

Supply Voltage (Relative to VSS)V

CC

-0.6 +7.0 V

Input Voltage (Relative to V

SS

)V

IN

-0.5

1

1. VIN min = -3.0V for pulse width < 50ns.

+7.0 V

Operating Temperature Range T

OPR

-55 +125

°

C

Storage Temperature Range T

STG

-65 +150

°

C

TABLE 3. DELTA LIMITS

PARAMETER VARIATION

ICC1 ±10%

I

CC

2 ±10%

I

CC

3 ±10%

I

LI

±10%

I

LO

±10%

Memory

3

All data sheets are subject to change without notice

©2001 Maxwell Technologies

All rights reserved.

1 Megabit (128K x 8-Bit) EEPROM

28C011T

12.19.01 Rev 7

1000580

TABLE 4. 28C011T RECOMMENDED OPERATING CONDITIONS

PARAMETER SYMBOL MIN MAX UNITS

Supply Voltage V

CC

4.5 5.5 V

Input Voltage

RES

_PIN

V

IL

-0.3

1

1. VIL min = 1.0V for pulse width < 50 ns

0.8 V

V

IH

2.2 VCC +0.3

V

H

VCC -0.5 VCC +1

Thermal Impedance — Flat Package

Θ

JC

-- 2.17 °C/W

Operating Temperature Range T

OPR

-55 +125

°

C

TABLE 5. 28C011T CAPACITANCE

(TA = 25 °C, f = 1 MHZ)

P

ARAMETER SYMBOL MIN MAX UNITS

Input Capacitance: VIN = 0V

1

1. Guaranteed by design.

C

IN

-- 6 pF

Output Capacitance: V

OUT

= 0V

1

C

OUT

-- 12 pF

TABLE 6. 28C011T DC ELECTRICAL CHARACTERISTICS

(VCC = 5V ± 10%, TA = -55 TO +125 °C, UNLESS OTHERWISE SPECIFIED)

P

ARAMETER TEST CONDITION SYMBOL MIN MAX UNITS

Input Leakage Current VCC = 5.5V, VIN = 5.5V I

IL

-- 2

1

1. ILI on RES = 100 uA max.

µA

Output Leakage Current V

CC

= 5.5V, V

OUT

= 5.5V/0.4V I

LO

-- 2 µA

Standby V

CC

Current

CE = V

CC

ICC1 -- 20 µA

CE

= V

IH

ICC2 -- 1 mA

Operating V

CC

Current I

OUT

= 0mA, Duty = 100%, Cycle = 1µs at

V

CC

= 5.5V

ICC3 -- 15 mA

I

OUT

= 0mA, Duty = 100%, Cycle = 150ns at

V

CC

= 5.5V

-- 50

Input Voltage

RES

_PIN

V

IL

-- 0.8 V

V

IH

2.2 --

V

H

VCC -0.5 --

Output Voltage I

OL

= 2.1 mA V

OL

-- 0.4 V

I

OH

= -0.4 mA V

OH

2.4 --

Memory

4

All data sheets are subject to change without notice

©2001 Maxwell Technologies

All rights reserved.

1 Megabit (128K x 8-Bit) EEPROM

28C011T

12.19.01 Rev 7

1000580

TABLE 7. 28C011T AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION

1

(VCC = 5V + 10%, TA = -55 TO +125 °C)

1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20ns; output load - 1 TTL gate + 100pF (including
scope and jig); reference levels for measuring timing - 0.8V/1.8V.

P

ARAMETER SYMBOL MIN MAX UNITS

Address Access Time
CE

= OE = VIL, WE = V

IH

-120

-150

-200

t

ACC

--

--

--

120
150
200

ns

Chip Enable Access Time
OE

= VIL, WE = V

IH

-120

-150

-200

t

CE

--

--

--

120
150
200

ns

Output Enable Access Time
CE

= VIL, WE = V

IH

-120

-150

-200

t

OE

0
0
0

75
75

100

ns

Output Hold to Address Change
CE

= OE = VIL, WE = V

IH

-120

-150

-200

t

OH

0
0
0

--

--

--

ns

Output Disable to High-Z

2

CE = VIL, WE = V

IH

-120

-150

-200

CE

= OE = VIL, WE = V

IH

-120

-150

-200

2. t

DF

and t

DFR

are defined as the time at which the output becomes an open circuit and data is no longer driven.

t

DF

t

DFR

0
0
0

0
0
0

50
50
60

300
350
450

ns

RES

to Output Delay

3

CE = OE = VIL, WE = V

IH

-120

-150

-200

3. Guaranteed by design.

t

RR

0
0
0

400
450
650

ns

Memory

5

All data sheets are subject to change without notice

©2001 Maxwell Technologies

All rights reserved.

1 Megabit (128K x 8-Bit) EEPROM

28C011T

12.19.01 Rev 7

1000580

TABLE 8. 28C011T AC ELECTRICAL CHARACTERISTICS FOR BYTE ERASE AND BYTE WRITE OPERATIONS

(VCC = 5V + 10%, TA = -55 TO +125 °C)

P

ARAMETER SYMBOL

MIN

1

MAX UNITS

Address Setup Time

-120

-150

-200

t

AS

0
0
0

--

--

--

ns

Chip Enable to Write Setup Time (WE

controlled)

-120

-150

-200

t

CS

0
0
0

--

--

--

ns

Write Pulse Width
CE

controlled

-120

-150

-200

WE

controlled

-120

-150

-200

t

CW

t

WP

200
250
350

150
250
350

--

--

--

--

--

--

ns

Address Hold Time

-120

-150

-200

t

AH

150
150
200

--

--

--

ns

Data Setup Time

-120

-150

-200

t

DS

75
120
200

--

--

--

ns

Data Hold Time

-120

-150

-200

t

DH

10

10

20

--

--

--

ns

Chip Enable Hold Time (WE

controlled)

-120

-150

-200

t

CH

0
0
0

--

--

--

ns

Write Enable to Write Setup Time (CE

controlled)

-120

-150

-200

t

WS

0
0
0

--

--

--

ns

Write Enable Hold Time (CE

controlled)

-120

-150

-200

t

WH

0
0
0

--

--

--

ns