Maxwell 28C011T User Manual

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28C011T

1 Megabit (128K x 8-Bit) EEPROM

FEATURES:

28C011T

V

CC

V

SS

RES

OE

CE

WE

RES

A0

A6

A7

A16

High Voltage

Generator

Control Logic Timing

Address

Buffer and

Latch

DESCRIPTION:

Y Decoder

X Decoder

Logic Diagram

I/O0 I/O7 RDY/Busy

I/O Buffer and

Input Latch

Y Gating

Memory Array

Data Latch

• 128k x 8-bit EEPROM

•R

AD-PAK® radiation-hardened against natural space radia-

tion

• Total dose hardness:

- > 100 krad (Si), depending upon space mission

• Excellent Single Event Effects:

- No Latchup > 120 MeV/mg/cm

- SEU > 90 MeV/mg/cm

2

read mode

• Package:

- 32-pin R

AD-PAK® flat package

- 32-pin Rad-Tolerant flat package

- JEDEC-approved byte-wide pinout

• High speed:

- 120, 150, and 200 ns maximum access times available

• High endurance:

- 10,000 erase/write (in Page Mode),

- 10 year data retention

• Page write mode:

- 1 to 128 bytes

• Low power dissipation

- 20 mW/MHz active (typical)

- 110 µW standby (maximum)

Maxwell Technologies’ 28C011T high-density 1 Megabit (128K x 8-Bit) EEPROM microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The 28C011T is capable of i n-system electrical byte and page programmability. It has a 128-byte page programming function to make its erase and write operations faster. It also features data

polling and a Ready/Busy signal to indicate the completion of erase and programming operations. In the 28C010T, hardware data protection is provided with the RES tion to noise protection on the WE

signal and write inhibit on

pin, in addi-

power on and off. Software data protection is implemented using the JEDEC optional standard algorithm.

Maxwell Technologies' patented R

AD-PAK® packaging technol-

ogy incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, R

AD-PAK® provides greater than 100

krad (Si) radiation dose tolerance. This product is available with screening up to Class S.

(858) 503-3300- Fax: (858) 503-3301 - www.maxwell.com

11.10.03 REV 10

All data sheets are subject to change without notice

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1 Megabit (128K x 8-Bit) EEPROM

TABLE 1. 28C011T PINOUT DESCRIPTION

PIN SYMBOL DESCRIPTION

12-5, 27, 26, 23, 25, 4, 28, 3, 31, 2 A0-A16 Address

24 OE

28C011T

Output Enable 22 CE 29 WE 32 V 16 V

1RDY/BUSY

30 RES

CC SS

Chip Enable

Write Enable

Power Supply

Ground

Ready/Busy

Reset

TABLE 2. 28C011T ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL MIN MAX UNITS Supply Voltage (Relative to VSS)V

Input Voltage (Relative to V Operating Temperature Range T Storage Temperature Range T

1. VIN min = -3.0V for pulse width < 50ns.

)V

SS

CC

IN OPR STG

-0.6 +7.0 V

1

-0.5

-55 +125

-65 +150

+7.0 V

TABLE 3. DELTA LIMITS

PARAMETER VARIATION

°

C

°

C

ICC1 ±10% I

2 ±10%

CC

I

3A ±10%

CC

3B ±10%

I

CC

TABLE 4. 28C011T RECOMMENDED OPERATING CONDITIONS

PARAMETER SYMBOL MIN MAX UNITS Supply Voltage V

Input Voltage

_PIN

RES

Operating Temperature Range T

1. VIL min = -1.0V for pulse width < 50 ns

11.10.03 REV 10

CC

V

IL

V

IH

V

H

OPR

All data sheets are subject to change without notice

4.5 5.5 V

1

-0.3

2.2 VCC +0.3

VCC -0.5 VCC +1

-55 +125

0.8 V

°

C

2

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1 Megabit (128K x 8-Bit) EEPROM

28C011T

TABLE 5. 28C011T CAPACITANCE

(TA = 25 °C, f = 1 MHZ)

P

ARAMETER SYMBOL MIN MAX UNITS

OUT

1

= 0V

C

IN

1

C

OUT

-- 6 pF

-- 12 pF

Input Capacitance: VIN = 0V Output Capacitance: V

1. Guaranteed by design.

TABLE 6. 28C011T DC ELECTRICAL CHARACTERISTICS

(VCC = 5V ± 10%, TA = -55 TO +125 °C, UNLESS OTHERWISE SPECIFIED)

P

ARAMETER TEST CONDITION SUBGROUPS SYMBOL MIN MAX UNITS

Input Leakage Current VCC = 5.5V, VIN = 5.5V 1, 2, 3 I Output Leakage Current V Standby V

Current

CC

Operating V

Current I

CC

Input Voltage

RES

_PIN

Output Voltage I

= 5.5V, V

CC

CE = V

CC

CE

= V

IH

= 0mA, Duty = 100%, Cycle =

OUT

1µs at V I

= 0mA, Duty = 100%, Cycle =

OUT

150ns at V

= 2.1 mA 1, 2, 3 V

OL

I

= -0.4 mA V

OH

= 5.5V

CC

= 5.5V/0.4V 1, 2, 3 I

OUT

1, 2, 3 I

= 5.5V

1, 2, 3 V

IL

LO

CC1

I

CC2

CC3A

CC3B

IL

V

IH

V

H

OL

OH

-- 2

-- 2 µA

-- 20 µA

-- 1 mA

-- 15 mA

-- 50

-- 0.8 V

2.2 --

VCC -0.5 --

-- 0.4 V

2.4 --

1

µA

1. I

on RES = 100 uA max.

LI

TABLE 7. 28C011T AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION

1

(VCC = 5V + 10%, TA = -55 TO +125 °C)

P

ARAMETER SYMBOL SUBGROUPS MIN MAX UNITS

Address Access Time CE

= OE = VIL, WE = V

IH

-120

-150

-200

Chip Enable Access Time OE

= VIL, WE = V

IH

-120

-150

-200

t

ACC

t

CE

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9, 10, 11

--

120 150 200

9, 10, 11

--

All data sheets are subject to change without notice

120 150 200

ns

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1 Megabit (128K x 8-Bit) EEPROM

28C011T

TABLE 7. 28C011T AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION

(VCC = 5V + 10%, TA = -55 TO +125 °C)

P

ARAMETER SYMBOL SUBGROUPS MIN MAX UNITS

t

OE

t

OH

t

DF

DFR

t

RR

9, 10, 11

0 0 0

9, 10, 11

0 0 0

9, 10, 11

0 0 0

9, 10, 11

--

Output Enable Access Time CE

= VIL, WE = V

-120

-150

-200

Output Hold to Address Change CE

= OE = VIL, WE = V

-120

-150

-200

Output Disable to High-Z CE = VIL, WE = V

-120

-150

-200

CE

= OE = VIL, WE = V

-120

-150

-200

RES

to Output Delay

CE = OE = VIL, WE = V

-120

-150

-200

IH

2

IH

3

IH

1

75 75

100

--

50 50 60

300 350 450

400 450 650

ns

1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20ns; output load - 1 TTL gate + 100pF (including scope and jig); reference levels for measuring timing - 0.8V/1.8V.

2. t

and t

DF

3. Guaranteed by design.

are defined as the time at which the output becomes an open circuit and data is no longer driven.

DFR

TABLE 8. 28C011T AC ELECTRICAL CHARACTERISTICS FOR PAGE/BYTE ERASE AND BYTE WRITE

PERATIONS

O

(VCC = 5V + 10%, TA = -55 TO +125 °C)

ARAMETER SYMBOL SUBGROUPS

P Address Setup Time

-120

-150

-200

Chip Enable to Write Setup Time (WE

-120

-150

-200

controlled)

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t

9, 10, 11

AS

t

CS

9, 10, 11

All data sheets are subject to change without notice

MIN

0 0 0

1

MAX UNITS

ns

--

ns

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1 Megabit (128K x 8-Bit) EEPROM

28C011T

TABLE 8. 28C011T AC ELECTRICAL CHARACTERISTICS FOR PAGE/BYTE ERASE AND BYTE WRITE

PERATIONS

O

(VCC = 5V + 10%, TA = -55 TO +125 °C)

ARAMETER SYMBOL SUBGROUPS

P Write Pulse Width

CE

controlled

-120

-150

-200

WE

controlled

-120

-150

-200

Address Hold Time

-120

-150

-200

Data Setup Time

-120

-150

-200

Data Hold Time

-120

-150

-200

t

CW

t

WP

t

AH

t

DS

t

DH

9, 10, 11

MIN

200 250 350

150 150 200

75 100 150

10

1

MAX UNITS

ns

--

-ns

--

ns

--

ns

--

Chip Enable Hold Time (WE

-120

-150

-2000

Write Enable to Write Setup Time (CE

-120

-150

-200

Write Enable Hold Time (CE

-120

-150

-200

Output Enable to Write Setup Time

-120

-150

-200

Output Enable Hold Time

-120

-150

-200

controlled)

11.10.03 REV 10

t

OES

t

OEH

CH

WS

WH

9, 10, 11

0 0 0

9, 10, 11

0 0 0

9, 10, 11

0 0 0

9, 10, 11

0 0 0

9, 10, 11

0 0 0

All data sheets are subject to change without notice

--

ns

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1 Megabit (128K x 8-Bit) EEPROM

28C011T

TABLE 8. 28C011T AC ELECTRICAL CHARACTERISTICS FOR PAGE/BYTE ERASE AND BYTE WRITE

PERATIONS

O

(VCC = 5V + 10%, TA = -55 TO +125 °C)

ARAMETER SYMBOL SUBGROUPS

P Write Cycle Time

-120

-150

-200

Data Latch Time

-120

-150

-200

Byte Load Window

-120

-150

-200

Byte Load Cycle

-120

-150

-200

Time to Device Busy

-120

-150

-200

Write Start Time

-120

-150

-200

RES

to Write Setup Time

-120

-150

-200

V

to RES Setup Time

CC

-120

-150

-200

2

3

4

t

WC

t

DL

t

BL

BLC

t

DB

t

DW

t

RP

RES

9, 10, 11

MIN

--

250 300 400

100 100 200

0.55

0.95

100 120 170

150 150 250

100 100 200

1 1 3

1

MAX UNITS

ms 10 10 10

ns

--

-µs

--

-µs

30 30 30

ns

--

ns

--

-µs

--

-µs

--

1. Use this device in a longer cycle than this value.

2. t

must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the

WC

internal write operation within this value.

3. Next read or write operation can be initiated after t

4. Gauranteed by design.

if polling techniques or RDY/BUSY are used.

DW

11.10.03 REV 10

All data sheets are subject to change without notice

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