Maxwell 28C011T User Manual

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28C011T

1 Megabit (128K x 8-Bit) EEPROM

FEATURES:

28C011T

V

CC

V

SS

RES

OE

CE

WE

RES

A0

A6

A7

A16

High Voltage

Generator

Control Logic Timing

Address

Buffer and

Latch

DESCRIPTION:

Y Decoder

X Decoder

Logic Diagram

I/O0 I/O7 RDY/Busy

I/O Buffer and

Input Latch

Y Gating

Memory Array

Data Latch

• 128k x 8-bit EEPROM

•R

AD-PAK® radiation-hardened against natural space radia-

tion

• Total dose hardness:

- > 100 krad (Si), depending upon space mission

• Excellent Single Event Effects:

- No Latchup > 120 MeV/mg/cm

- SEU > 90 MeV/mg/cm

2

read mode

• Package:

- 32-pin R

AD-PAK® flat package

- 32-pin Rad-Tolerant flat package

- JEDEC-approved byte-wide pinout

• High speed:

- 120, 150, and 200 ns maximum access times available

• High endurance:

- 10,000 erase/write (in Page Mode),

- 10 year data retention

• Page write mode:

- 1 to 128 bytes

• Low power dissipation

- 20 mW/MHz active (typical)

- 110 µW standby (maximum)

Maxwell Technologies’ 28C011T high-density 1 Megabit (128K x 8-Bit) EEPROM microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The 28C011T is capable of i n-system electrical byte and page programmability. It has a 128-byte page programming function to make its erase and write operations faster. It also features data

polling and a Ready/Busy signal to indicate the completion of erase and programming operations. In the 28C010T, hardware data protection is provided with the RES tion to noise protection on the WE

signal and write inhibit on

pin, in addi-

power on and off. Software data protection is implemented using the JEDEC optional standard algorithm.

Maxwell Technologies' patented R

AD-PAK® packaging technol-

ogy incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, R

AD-PAK® provides greater than 100

krad (Si) radiation dose tolerance. This product is available with screening up to Class S.

(858) 503-3300- Fax: (858) 503-3301 - www.maxwell.com

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TABLE 1. 28C011T PINOUT DESCRIPTION

PIN SYMBOL DESCRIPTION

12-5, 27, 26, 23, 25, 4, 28, 3, 31, 2 A0-A16 Address

24 OE

28C011T

Output Enable 22 CE 29 WE 32 V 16 V

1RDY/BUSY

30 RES

CC SS

Chip Enable

Write Enable

Power Supply

Ground

Ready/Busy

Reset

TABLE 2. 28C011T ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL MIN MAX UNITS Supply Voltage (Relative to VSS)V

Input Voltage (Relative to V Operating Temperature Range T Storage Temperature Range T

1. VIN min = -3.0V for pulse width < 50ns.

)V

SS

CC

IN OPR STG

-0.6 +7.0 V

1

-0.5

-55 +125

-65 +150

+7.0 V

TABLE 3. DELTA LIMITS

PARAMETER VARIATION

°

C

°

C

ICC1 ±10% I

2 ±10%

CC

I

3A ±10%

CC

3B ±10%

I

CC

TABLE 4. 28C011T RECOMMENDED OPERATING CONDITIONS

PARAMETER SYMBOL MIN MAX UNITS Supply Voltage V

Input Voltage

_PIN

RES

Operating Temperature Range T

1. VIL min = -1.0V for pulse width < 50 ns

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CC

V

IL

V

IH

V

H

OPR

All data sheets are subject to change without notice

4.5 5.5 V

1

-0.3

2.2 VCC +0.3

VCC -0.5 VCC +1

-55 +125

0.8 V

°

C

2

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28C011T

TABLE 5. 28C011T CAPACITANCE

(TA = 25 °C, f = 1 MHZ)

P

ARAMETER SYMBOL MIN MAX UNITS

OUT

1

= 0V

C

IN

1

C

OUT

-- 6 pF

-- 12 pF

Input Capacitance: VIN = 0V Output Capacitance: V

1. Guaranteed by design.

TABLE 6. 28C011T DC ELECTRICAL CHARACTERISTICS

(VCC = 5V ± 10%, TA = -55 TO +125 °C, UNLESS OTHERWISE SPECIFIED)

P

ARAMETER TEST CONDITION SUBGROUPS SYMBOL MIN MAX UNITS

Input Leakage Current VCC = 5.5V, VIN = 5.5V 1, 2, 3 I Output Leakage Current V Standby V

Current

CC

Operating V

Current I

CC

Input Voltage

RES

_PIN

Output Voltage I

= 5.5V, V

CC

CE = V

CC

CE

= V

IH

= 0mA, Duty = 100%, Cycle =

OUT

1µs at V I

= 0mA, Duty = 100%, Cycle =

OUT

150ns at V

= 2.1 mA 1, 2, 3 V

OL

I

= -0.4 mA V

OH

= 5.5V

CC

= 5.5V/0.4V 1, 2, 3 I

OUT

1, 2, 3 I

= 5.5V

1, 2, 3 V

IL

LO

CC1

I

CC2

CC3A

CC3B

IL

V

IH

V

H

OL

OH

-- 2

-- 2 µA

-- 20 µA

-- 1 mA

-- 15 mA

-- 50

-- 0.8 V

2.2 --

VCC -0.5 --

-- 0.4 V

2.4 --

1

µA

1. I

on RES = 100 uA max.

LI

TABLE 7. 28C011T AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION

1

(VCC = 5V + 10%, TA = -55 TO +125 °C)

P

ARAMETER SYMBOL SUBGROUPS MIN MAX UNITS

Address Access Time CE

= OE = VIL, WE = V

IH

-120

-150

-200

Chip Enable Access Time OE

= VIL, WE = V

IH

-120

-150

-200

t

ACC

t

CE

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9, 10, 11

--

120 150 200

9, 10, 11

--

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120 150 200

ns

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28C011T

TABLE 7. 28C011T AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION

(VCC = 5V + 10%, TA = -55 TO +125 °C)

P

ARAMETER SYMBOL SUBGROUPS MIN MAX UNITS

t

OE

t

OH

t

DF

DFR

t

RR

9, 10, 11

0 0 0

9, 10, 11

0 0 0

9, 10, 11

0 0 0

9, 10, 11

--

Output Enable Access Time CE

= VIL, WE = V

-120

-150

-200

Output Hold to Address Change CE

= OE = VIL, WE = V

-120

-150

-200

Output Disable to High-Z CE = VIL, WE = V

-120

-150

-200

CE

= OE = VIL, WE = V

-120

-150

-200

RES

to Output Delay

CE = OE = VIL, WE = V

-120

-150

-200

IH

2

IH

3

IH

1

75 75

100

--

50 50 60

300 350 450

400 450 650

ns

1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20ns; output load - 1 TTL gate + 100pF (including scope and jig); reference levels for measuring timing - 0.8V/1.8V.

2. t

and t

DF

3. Guaranteed by design.

are defined as the time at which the output becomes an open circuit and data is no longer driven.

DFR

TABLE 8. 28C011T AC ELECTRICAL CHARACTERISTICS FOR PAGE/BYTE ERASE AND BYTE WRITE

PERATIONS

O

(VCC = 5V + 10%, TA = -55 TO +125 °C)

ARAMETER SYMBOL SUBGROUPS

P Address Setup Time

-120

-150

-200

Chip Enable to Write Setup Time (WE

-120

-150

-200

controlled)

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t

9, 10, 11

AS

t

CS

9, 10, 11

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MIN

0 0 0

1

MAX UNITS

ns

--

ns

4

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28C011T

TABLE 8. 28C011T AC ELECTRICAL CHARACTERISTICS FOR PAGE/BYTE ERASE AND BYTE WRITE

PERATIONS

O

(VCC = 5V + 10%, TA = -55 TO +125 °C)

ARAMETER SYMBOL SUBGROUPS

P Write Pulse Width

CE

controlled

-120

-150

-200

WE

controlled

-120

-150

-200

Address Hold Time

-120

-150

-200

Data Setup Time

-120

-150

-200

Data Hold Time

-120

-150

-200

t

CW

t

WP

t

AH

t

DS

t

DH

9, 10, 11

MIN

200 250 350

150 150 200

75 100 150

10

1

MAX UNITS

ns

--

-ns

--

ns

--

ns

--

Chip Enable Hold Time (WE

-120

-150

-2000

Write Enable to Write Setup Time (CE

-120

-150

-200

Write Enable Hold Time (CE

-120

-150

-200

Output Enable to Write Setup Time

-120

-150

-200

Output Enable Hold Time

-120

-150

-200

controlled)

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t

OES

t

OEH

CH

WS

WH

9, 10, 11

0 0 0

9, 10, 11

0 0 0

9, 10, 11

0 0 0

9, 10, 11

0 0 0

9, 10, 11

0 0 0

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--

ns

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28C011T

TABLE 8. 28C011T AC ELECTRICAL CHARACTERISTICS FOR PAGE/BYTE ERASE AND BYTE WRITE

PERATIONS

O

(VCC = 5V + 10%, TA = -55 TO +125 °C)

ARAMETER SYMBOL SUBGROUPS

P Write Cycle Time

-120

-150

-200

Data Latch Time

-120

-150

-200

Byte Load Window

-120

-150

-200

Byte Load Cycle

-120

-150

-200

Time to Device Busy

-120

-150

-200

Write Start Time

-120

-150

-200

RES

to Write Setup Time

-120

-150

-200

V

to RES Setup Time

CC

-120

-150

-200

2

3

4

t

WC

t

DL

t

BL

BLC

t

DB

t

DW

t

RP

RES

9, 10, 11

MIN

--

250 300 400

100 100 200

0.55

0.95

100 120 170

150 150 250

100 100 200

1 1 3

1

MAX UNITS

ms 10 10 10

ns

--

-µs

--

-µs

30 30 30

ns

--

ns

--

-µs

--

-µs

--

1. Use this device in a longer cycle than this value.

2. t

must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the

WC

internal write operation within this value.

3. Next read or write operation can be initiated after t

4. Gauranteed by design.

if polling techniques or RDY/BUSY are used.

DW

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28C011T

TABLE 9. 28C011T MODE SELECTION

P

ARAMETER CE OE WE I/O RES RDY/BUSY

Read V Standby V Write V Deselect V

IL IH IL IL

Write Inhibit X X V

XV

Data Polling V

IL

Program X X X High-Z V

V

IL

V

IH

X X High-Z X High-Z

V

IH

V

IH

IL

V

IL

V

IL

V

IH IH

X--X--

V

IH

Data Out (I/O7) V

1

D

OUT

D

IN

High-Z V

V

H

V

H H

High-Z --> V

-- X --

H

IL

High-Z

V

High-Z

1. X = Don’t care.

FIGURE 1. READ TIMING WAVEFORM

OL

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FIGURE 2. BYTE WRITE TIMING WAVEFORM(1) (WE CONTROLLED)

28C011T

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FIGURE 3. BYTE WRITE TIMING WAVEFORM (2) (CE CONTROLLED)

28C011T

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FIGURE 4. PAGE WRITE TIMING WAVEFORM(1) (WE CONTROLLED)

28C011T

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FIGURE 5. PAGE WRITE TIMING W AVEFORM(2) (CE CONTROLLED)

28C011T

IGURE 6. DATA POLLING TIMING WAVEFORM

F

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FIGURE 7. SOFTWARE DATA PROTECTION TIMING WAVEFORM(1) (IN PROTECTION MODE)

IGURE 8. SOFTWARE DATA PROTECTION TIMING WAVEFORM(2) (IN NON-PROTECTION MODE)

F

28C011T

EEPROM APPLICATION NOTES

This application note describes the programming procedures for the EEPROM modules and with details of various techniques to preserve data protection.

Automatic Page Write

Page-mode write feature allows 1 to 128 bytes of data to be written into the EEPROM in a single write cycle, and allows the undefined data within 128 bytes to be written corresponding to the undefined address (A0 to A6). Loading the first byte of data, the data load window opens 30µs for the second byte. In the same manner each additional byte of data can be loaded within 30µ s. In case CE erase and write mode automatically and only the input data are written into the EEPROM.

and WE are kept high for 100 µ s after data input, EEPROM enters

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WE, CE Pin Operation

During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of WE

or CE.

Data Polling

Data Polling function allows the status of the EEPROM to be determined. If EEPROM is set to read mode during a write cycle, an inversion of the last byte of data to be loaded outputs from I/O 7 to indicate that the EEPROM is performing a write operation.

RDY/Busy Signal

RDY/Busy signal also allows a comparison operation to determine the status of the EEPROM. The RDY/Busy signal has high impedance except in write cycle and is lowered to V the RDY/Busy

RES Signal

When RES is LOW, the EEPROM cannot be read and programmed. Therefore, data can be protected by keeping RES

low when VCC is switched. RES should be high during read and programming because it doesn’t provide a latch

function.

signal changes state to high impedance.

after the first write signal. At the-end of a write cycle,

OL

28C011T

Data Protection

To protect the data during operation and power on/off, the EEPROM has the internal functions described below.

1. Data Protection against Noise of Control Pins (CE, OE, WE) during Operation.

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During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming mode by mistake. To prevent this phenomenon, the EEPROM has a noise cancellation function that cuts noise if its width is 20ns or less in programming mode. Be careful not to allow noise of a width of more than 20ns on the control pins.

28C011T

2. Data Protection at V When V

programming mode by mistake. To prevent this unintentional programming, the EEPROM must be kept in unprogrammable state during V

RES become low, programming operation doesn’t finish correctly in case that RES should be kept high for 10 ms after the last data input.

is turned on or off, noise on the control pins generated by external circuits, such as CPUs, may turn the EEPROM to

CC

should be kept at VSS level when VCC is turned on or off. The EEPROM breaks off programming operation when RES

on/off

CC

on/off by using a CPU reset signal to RES pin.

falls low during programming operation. RES

3. Software Data Protection

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1 Megabit (128K x 8-Bit) EEPROM

The software data protection function is to prevent unintentional programming caused by noise generated by external circuits. In software data protection mode, 3 bytes of data must be input before write data as follows. These bytes can switch the nonprotection mode to the protection mode.

Software data protection mode can be canceled by inputting the following 6 bytes. Then, the EEP ROM turns to the non-pr otection mode and can write data normally. However, when the data is input in the canceling cycle, the data cannot be written.

28C011T

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1 Megabit (128K x 8-Bit) EEPROM

28C011T

32-PIN RAD-PAK® FLAT PACKAGE

SYMBOL

MIN NOM MAX

A 0.117 0.130 0.143 b 0.015 0.017 0.022 c 0.004 0.005 0.009 D -- 0.820 0.830 E 0.404 0.410 0.416

E1 -- -- 0.440

e 0.050BSC L 0.350 0.370 0.390 Q 0.021 0.033 0.036

S1 0.005 0.027 --

N32

Note: All dimensions in inches

DIMENSION

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1 Megabit (128K x 8-Bit) EEPROM

28C011T

28C011T 32-PIN RAD-TOLERANT FLAT PACKAGE

SYMBOL

MIN NOM MAX

A 0.078 0.087 0.096 b 0.015 0.017 0.022 c 0.004 0.005 0.009 D -- 0.820 0.830 E 0.404 0.410 0.416

E1 -- -- 0.426

e 0.050BSC L 0.390 0.400 0.410

S1 0.005 0.027 --

N32

Note: All dimensions in inches.

DIMENSION

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Important Notice: These data sheets are created using the chip manufacturers published specifications. Maxwell Technologies verifies

functionality by testing key parameters either by 100% testing, sample testing or characterization. The specifications presented within these data sheets represent the latest and most accurate information available to

date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no responsibility for the use of this information.

Maxwell Technologies’ products are not authorized for use as critical components in life support devices or systems without express written approval from Maxwell Technologies.

Any claim against Maxwell Technologies must be made within 90 days from the date of shipment from Maxwell Technologies. Maxwell Technologies’ liability shall be limited to replacement of defective parts.

28C011T

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1 Megabit (128K x 8-Bit) EEPROM

Product Ordering Options

Model Number

28C011T

XX

F X

-XX

Feature

Access Time

Screening Flow

Package

Option Details

12 = 120 ns 15 = 150 ns 20 = 200 ns

Monolithic S = Maxwell Class S B = Maxwell Class B I = Industrial (testing @ -55° C, +25°C, +125°C) E = Engineering (testing @ +25°C)

F = Flat Pa ck

Radiation Feature

Base Product Nomenclature

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RP = R

AD-PAK® package

RT = No Radiation Guarentee

CLass E and I Only RT1 = Guaranteed to 10 krad at die level RT2 = Guaranteed to 25 krad at die level RT4 = Guaranteed to 40 krad at

1 Megabit (128k x 8-bit) EEPROM

All data sheets are subject to change without notice

19

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