MAXWELL 28C010TRT4FS20, 28C010TRT4FS15, 28C010TRT4FS12, 28C010TRT4FI20, 28C010TRT4FI15 Datasheet
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1
Memory
All data sheets are subject to change without notice
(858) 503-3300- Fax: (858) 503-3301 - www.maxwell.com
1 Megabit (128K x 8-Bit) EEPROM
28C010T
©2001 Maxwell Technologies
All rights reserved.
12.19.01 Rev 8
1000582
FEATURES:
• 128k x 8-bit EEPROM
•R
AD-PAK® radiation-hardened against natural space radia-
tion
• Total dose hardness:
- > 100 krad (Si), depending upon space mission
• Excellent Single Event Effects:
- No Latchup > 120 MeV/mg/cm
2
- SEU > 90 MeV/mg/cm
2
read mode
• Package:
- 32-pin R
AD-PAK flat pack/DIP package
- JEDEC-approved byte-wide pinout
• High speed:
- 120, 150, and 200 ns maximum access times available
• High endurance:
- 10,000 erase/write (in Page Mode), 10-year data retention
• Page write mode:
- 1 to 128 bytes
• Low power dissipation
- 20 mW/MHz active (typical)
- 110 µW standby (maximum)
• Standard JEDEC package width
DESCRIPTION:
Maxwell Technologies’ 28C010T high-density 1 Megabit
(128K x 8-Bit) EEPROM microcircuit features a greater than
100 krad (Si) total dose tolerance, depending upon space mission. The 28C010T is capable of in-system electrical byte and
page programmability. It has a 128-byte page programming
function to make its erase and write operations faster. It also
features data
polling and a Ready/Busy signal to indicate the
completion of erase and programming operations. In the
28C010T, hardware data protection is provided with the RES
pin, in addition to noise protection on the WE signal and write
inhibit on power on and off. Software data protection is implemented using the JEDEC optional standard algorithm.
Maxwell Technologies' patented R
AD-PAK® packaging technol-
ogy incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, R
AD-PAK provides greater than 100
krad (Si) radiation dose tolerance. This product is available
with screening up to Class S.
High Voltage
Generator
Control Logic Timing
Address
Buffer and
Latch
Y Decoder
X Decoder
Y Gating
Memory Array
I/O Buffer and
Input Latch
Data Latch
V
CC
V
SS
RES
OE
CE
WE
RES
A0
A6
A7
A16
I/O0 I/O7 RDY/Busy
Logic Diagram
Memory
2
All data sheets are subject to change without notice
©2001 Maxwell Technologies
All rights reserved.
1 Megabit (128K x 8-Bit) EEPROM
28C010T
12.19.01 Rev 8
1000582
TABLE 1. 28C010T PINOUT DESCRIPTION
PIN SYMBOL DESCRIPTION
12-5, 27, 26, 23, 25, 4, 28, 3, 31, 2 A0-A16 Address
24
OE Output Enable
22
CE Chip Enable
29
WE Write Enable
32 V
CC
Power Supply
16 V
SS
Ground
1 RDY/BUSY
Ready/Busy
30
RES Reset
TABLE 2. 28C010T ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL MIN MAX UNITS
Supply Voltage (Relative to VSS)V
CC
-0.6 +7.0 V
Input Voltage (Relative to V
SS
)V
IN
-0.5
1
1. VIN min = -3.0V for pulse width < 50ns.
+7.0 V
Operating Temperature Range T
OPR
-55 +125
°
C
Storage Temperature Range T
STG
-65 +150
°
C
TABLE 3. DELTA LIMITS
PARAMETER VARIATION
ICC1 ±10%
I
CC
2 ±10%
I
CC
3A ±10%
I
CC
3B ±10%
TABLE 4. 28C010T RECOMMENDED OPERATING CONDITIONS
PARAMETER SYMBOL MIN MAX UNITS
Supply Voltage V
CC
4.5 5.5 V
Input Voltage
RES
_PIN
V
IL
-0.3
1
0.8 V
V
IH
2.2 VCC +0.3
V
H
VCC -0.5 VCC +1
Thermal Impedance — Flat Package
Θ
JC
-- 2.17 °C/W
Memory
3
All data sheets are subject to change without notice
©2001 Maxwell Technologies
All rights reserved.
1 Megabit (128K x 8-Bit) EEPROM
28C010T
12.19.01 Rev 8
1000582
Operating Temperature Range T
OPR
-55 +125
°
C
1. V
IL
min = -1.0V for pulse width < 50 ns
TABLE 5. 28C010T CAPACITANCE
(TA = 25 °C, f = 1 MHZ)
P
ARAMETER SYMBOL MIN MAX UNITS
Input Capacitance: VIN = 0V
1
C
IN
-- 6 pF
Output Capacitance: V
OUT
= 0V
1
C
OUT
-- 12 pF
1. Guaranteed by design.
TABLE 6. 28C010T DC ELECTRICAL CHARACTERISTICS
(VCC = 5V ± 10%, TA = -55 TO +125 °C, UNLESS OTHERWISE SPECIFIED)
P
ARAMETER TEST CONDITION SYMBOL MIN MAX UNITS
Input Leakage Current VCC = 5.5V, VIN = 5.5V I
IL
-- 2
1
µA
Output Leakage Current V
CC
= 5.5V, V
OUT
= 5.5V/0.4V I
LO
-- 2 µA
Standby V
CC
Current
CE = V
CC
I
CC1
-- 20 µA
CE
= V
IH
I
CC2
-- 1 mA
Operating V
CC
Current I
OUT
= 0mA, Duty = 100%, Cycle = 1µs at
V
CC
= 5.5V
I
CC3
-- 15 mA
I
OUT
= 0mA, Duty = 100%, Cycle = 150ns at
V
CC
= 5.5V
-- 50
Input Voltage
RES
_PIN
V
IL
-- 0.8 V
V
IH
2.2 --
V
H
VCC -0.5 --
Output Voltage I
OL
= 2.1 mA V
OL
-- 0.4 V
I
OH
= -0.4 mA V
OH
2.4 --
1. I
LI
on RES = 100 uA max.
TABLE 7. 28C010T AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION
1
(VCC = 5V + 10%, TA = -55 TO +125 °C)
P
ARAMETER SYMBOL MIN MAX UNITS
Address Access Time
CE
= OE = VIL, WE = V
IH
-120
-150
-200
t
ACC
--
--
--
120
150
200
ns
TABLE 4. 28C010T RECOMMENDED OPERATING CONDITIONS
PARAMETER SYMBOL MIN MAX UNITS
Memory
4
All data sheets are subject to change without notice
©2001 Maxwell Technologies
All rights reserved.
1 Megabit (128K x 8-Bit) EEPROM
28C010T
12.19.01 Rev 8
1000582
Chip Enable Access Time
OE
= VIL, WE = V
IH
-120
-150
-200
t
CE
--
--
--
120
150
200
ns
Output Enable Access Time
CE
= VIL, WE = V
IH
-120
-150
-200
t
OE
0
0
0
75
75
100
ns
Output Hold to Address Change
CE
= OE = VIL, WE = V
IH
-120
-150
-200
t
OH
0
0
0
--
--
--
ns
Output Disable to High-Z
2
CE = VIL, WE = V
IH
-120
-150
-200
CE
= OE = VIL, WE = V
IH
-120
-150
-200
t
DF
t
DFR
0
0
0
0
0
0
50
50
60
300
350
450
ns
RES
to Output Delay
3
CE = OE = VIL, WE = V
IH
-120
-150
-200
t
RR
--
--
--
400
450
650
ns
1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20ns; output load - 1 TTL gate + 100pF (including
scope and jig); reference levels for measuring timing - 0.8V/1.8V.
2. t
DF
and t
DFR
are defined as the time at which the output becomes an open circuit and data is no longer driven.
3. Guaranteed by design.
TABLE 8. 28C010T AC ELECTRICAL CHARACTERISTICS FOR PAGE/BYTE ERASE AND BYTE WRITE
O
PERATIONS
(VCC = 5V + 10%, TA = -55 TO +125 °C)
P
ARAMETER SYMBOL
MIN
1
MAX UNITS
Address Setup Time
-120
-150
-200
t
AS
0
0
0
--
--
--
ns
TABLE 7. 28C010T AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION
1
(VCC = 5V + 10%, TA = -55 TO +125 °C)
P
ARAMETER SYMBOL MIN MAX UNITS
Memory
5
All data sheets are subject to change without notice
©2001 Maxwell Technologies
All rights reserved.
1 Megabit (128K x 8-Bit) EEPROM
28C010T
12.19.01 Rev 8
1000582
Chip Enable to Write Setup Time (WE controlled)
-120
-150
-200
t
CS
0
0
0
--
--
--
ns
Write Pulse Width
CE
controlled
-120
-150
-200
WE
controlled
-120
-150
-200
t
CW
t
WP
200
250
350
200
250
350
--
--
--
--
--
--
ns
Address Hold Time
-120
-150
-200
t
AH
150
150
200
--
--
--
ns
Data Setup Time
-120
-150
-200
t
DS
75
100
150
--
--
--
ns
Data Hold Time
-120
-150
-200
t
DH
10
10
20
--
--
--
ns
Chip Enable Hold Time (WE
controlled)
-120
-150
-2000
t
CH
0
0
0
--
--
--
ns
Write Enable to Write Setup Time (CE
controlled)
-120
-150
-200
t
WS
0
0
0
--
--
--
ns
Write Enable Hold Time (CE
controlled)
-120
-150
-200
t
WH
0
0
0
--
--
--
ns
Output Enable to Write Setup Time
-120
-150
-200
t
OES
0
0
0
--
--
--
ns
TABLE 8. 28C010T AC ELECTRICAL CHARACTERISTICS FOR PAGE/BYTE ERASE AND BYTE WRITE
O
PERATIONS
(VCC = 5V + 10%, TA = -55 TO +125 °C)
P
ARAMETER SYMBOL
MIN
1
MAX UNITS
Memory
6
All data sheets are subject to change without notice
©2001 Maxwell Technologies
All rights reserved.
1 Megabit (128K x 8-Bit) EEPROM
28C010T
12.19.01 Rev 8
1000582
Output Enable Hold Time
-120
-150
-200
t
OEH
0
0
0
--
--
--
ns
Write Cycle Time
2
-120
-150
-200
t
WC
--
--
--
10
10
20
ms
Data Latch Time
-120
-150
-200
t
DL
250
300
400
--
--
--
ns
Byte Load Window
-120
-150
-200
t
BL
100
100
200
--
--
--
µs
Byte Load Cycle
-120
-150
-200
t
BLC
0.55
0.55
0.95
30
30
30
µs
Time to Device Busy
-120
-150
-200
t
DB
100
120
170
--
--
--
ns
Write Start Time
3
-120
-150
-200
t
DW
150
150
250
--
--
--
ns
RES
to Write Setup Time
-120
-150
-200
t
RP
100
100
200
--
--
--
µs
V
CC
to RES Setup Time
4
-120
-150
-200
t
RES
1
1
3
--
--
--
µs
1. Use this device in a longer cycle than this value.
2. t
WC
must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the
internal write operation within this value.
3. Next read or write operation can be initiated after t
DW
if polling techniques or RDY/BUSY are used.
4. Gauranteed by design.
TABLE 8. 28C010T AC ELECTRICAL CHARACTERISTICS FOR PAGE/BYTE ERASE AND BYTE WRITE
O
PERATIONS
(VCC = 5V + 10%, TA = -55 TO +125 °C)
P
ARAMETER SYMBOL
MIN
1
MAX UNITS
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