Datasheet 28C010TRT4FS20, 28C010TRT4FS15, 28C010TRT4FS12, 28C010TRT4FI20, 28C010TRT4FI15 Datasheet (MAXWELL)
...
1
Memory
All data sheets are subject to change without notice
(858) 503-3300- Fax: (858) 503-3301 - www.maxwell.com
1 Megabit (128K x 8-Bit) EEPROM
28C010T
©2001 Maxwell Technologies
All rights reserved.
12.19.01 Rev 8
1000582
FEATURES:
• 128k x 8-bit EEPROM
•R
AD-PAK® radiation-hardened against natural space radia-
tion
• Total dose hardness:
- > 100 krad (Si), depending upon space mission
• Excellent Single Event Effects:
- No Latchup > 120 MeV/mg/cm
2
- SEU > 90 MeV/mg/cm
2
read mode
• Package:
- 32-pin R
AD-PAK flat pack/DIP package
- JEDEC-approved byte-wide pinout
• High speed:
- 120, 150, and 200 ns maximum access times available
• High endurance:
- 10,000 erase/write (in Page Mode), 10-year data retention
• Page write mode:
- 1 to 128 bytes
• Low power dissipation
- 20 mW/MHz active (typical)
- 110 µW standby (maximum)
• Standard JEDEC package width
DESCRIPTION:
Maxwell Technologies’ 28C010T high-density 1 Megabit
(128K x 8-Bit) EEPROM microcircuit features a greater than
100 krad (Si) total dose tolerance, depending upon space mission. The 28C010T is capable of in-system electrical byte and
page programmability. It has a 128-byte page programming
function to make its erase and write operations faster. It also
features data
polling and a Ready/Busy signal to indicate the
completion of erase and programming operations. In the
28C010T, hardware data protection is provided with the RES
pin, in addition to noise protection on the WE signal and write
inhibit on power on and off. Software data protection is implemented using the JEDEC optional standard algorithm.
Maxwell Technologies' patented R
AD-PAK® packaging technol-
ogy incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, R
AD-PAK provides greater than 100
krad (Si) radiation dose tolerance. This product is available
with screening up to Class S.
High Voltage
Generator
Control Logic Timing
Address
Buffer and
Latch
Y Decoder
X Decoder
Y Gating
Memory Array
I/O Buffer and
Input Latch
Data Latch
V
CC
V
SS
RES
OE
CE
WE
RES
A0
A6
A7
A16
I/O0 I/O7 RDY/Busy
Logic Diagram
Memory
2
All data sheets are subject to change without notice
©2001 Maxwell Technologies
All rights reserved.
1 Megabit (128K x 8-Bit) EEPROM
28C010T
12.19.01 Rev 8
1000582
TABLE 1. 28C010T PINOUT DESCRIPTION
PIN SYMBOL DESCRIPTION
12-5, 27, 26, 23, 25, 4, 28, 3, 31, 2 A0-A16 Address
24
OE Output Enable
22
CE Chip Enable
29
WE Write Enable
32 V
CC
Power Supply
16 V
SS
Ground
1 RDY/BUSY
Ready/Busy
30
RES Reset
TABLE 2. 28C010T ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL MIN MAX UNITS
Supply Voltage (Relative to VSS)V
CC
-0.6 +7.0 V
Input Voltage (Relative to V
SS
)V
IN
-0.5
1
1. VIN min = -3.0V for pulse width < 50ns.
+7.0 V
Operating Temperature Range T
OPR
-55 +125
°
C
Storage Temperature Range T
STG
-65 +150
°
C
TABLE 3. DELTA LIMITS
PARAMETER VARIATION
ICC1 ±10%
I
CC
2 ±10%
I
CC
3A ±10%
I
CC
3B ±10%
TABLE 4. 28C010T RECOMMENDED OPERATING CONDITIONS
PARAMETER SYMBOL MIN MAX UNITS
Supply Voltage V
CC
4.5 5.5 V
Input Voltage
RES
_PIN
V
IL
-0.3
1
0.8 V
V
IH
2.2 VCC +0.3
V
H
VCC -0.5 VCC +1
Thermal Impedance — Flat Package
Θ
JC
-- 2.17 °C/W
Memory
3
All data sheets are subject to change without notice
©2001 Maxwell Technologies
All rights reserved.
1 Megabit (128K x 8-Bit) EEPROM
28C010T
12.19.01 Rev 8
1000582
Operating Temperature Range T
OPR
-55 +125
°
C
1. V
IL
min = -1.0V for pulse width < 50 ns
TABLE 5. 28C010T CAPACITANCE
(TA = 25 °C, f = 1 MHZ)
P
ARAMETER SYMBOL MIN MAX UNITS
Input Capacitance: VIN = 0V
1
C
IN
-- 6 pF
Output Capacitance: V
OUT
= 0V
1
C
OUT
-- 12 pF
1. Guaranteed by design.
TABLE 6. 28C010T DC ELECTRICAL CHARACTERISTICS
(VCC = 5V ± 10%, TA = -55 TO +125 °C, UNLESS OTHERWISE SPECIFIED)
P
ARAMETER TEST CONDITION SYMBOL MIN MAX UNITS
Input Leakage Current VCC = 5.5V, VIN = 5.5V I
IL
-- 2
1
µA
Output Leakage Current V
CC
= 5.5V, V
OUT
= 5.5V/0.4V I
LO
-- 2 µA
Standby V
CC
Current
CE = V
CC
I
CC1
-- 20 µA
CE
= V
IH
I
CC2
-- 1 mA
Operating V
CC
Current I
OUT
= 0mA, Duty = 100%, Cycle = 1µs at
V
CC
= 5.5V
I
CC3
-- 15 mA
I
OUT
= 0mA, Duty = 100%, Cycle = 150ns at
V
CC
= 5.5V
-- 50
Input Voltage
RES
_PIN
V
IL
-- 0.8 V
V
IH
2.2 --
V
H
VCC -0.5 --
Output Voltage I
OL
= 2.1 mA V
OL
-- 0.4 V
I
OH
= -0.4 mA V
OH
2.4 --
1. I
LI
on RES = 100 uA max.
TABLE 7. 28C010T AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION
1
(VCC = 5V + 10%, TA = -55 TO +125 °C)
P
ARAMETER SYMBOL MIN MAX UNITS
Address Access Time
CE
= OE = VIL, WE = V
IH
-120
-150
-200
t
ACC
--
--
--
120
150
200
ns
TABLE 4. 28C010T RECOMMENDED OPERATING CONDITIONS
PARAMETER SYMBOL MIN MAX UNITS
Memory
4
All data sheets are subject to change without notice
©2001 Maxwell Technologies
All rights reserved.
1 Megabit (128K x 8-Bit) EEPROM
28C010T
12.19.01 Rev 8
1000582
Chip Enable Access Time
OE
= VIL, WE = V
IH
-120
-150
-200
t
CE
--
--
--
120
150
200
ns
Output Enable Access Time
CE
= VIL, WE = V
IH
-120
-150
-200
t
OE
0
0
0
75
75
100
ns
Output Hold to Address Change
CE
= OE = VIL, WE = V
IH
-120
-150
-200
t
OH
0
0
0
--
--
--
ns
Output Disable to High-Z
2
CE = VIL, WE = V
IH
-120
-150
-200
CE
= OE = VIL, WE = V
IH
-120
-150
-200
t
DF
t
DFR
0
0
0
0
0
0
50
50
60
300
350
450
ns
RES
to Output Delay
3
CE = OE = VIL, WE = V
IH
-120
-150
-200
t
RR
--
--
--
400
450
650
ns
1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20ns; output load - 1 TTL gate + 100pF (including
scope and jig); reference levels for measuring timing - 0.8V/1.8V.
2. t
DF
and t
DFR
are defined as the time at which the output becomes an open circuit and data is no longer driven.
3. Guaranteed by design.
TABLE 8. 28C010T AC ELECTRICAL CHARACTERISTICS FOR PAGE/BYTE ERASE AND BYTE WRITE
O
PERATIONS
(VCC = 5V + 10%, TA = -55 TO +125 °C)
P
ARAMETER SYMBOL
MIN
1
MAX UNITS
Address Setup Time
-120
-150
-200
t
AS
0
0
0
--
--
--
ns
TABLE 7. 28C010T AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION
1
(VCC = 5V + 10%, TA = -55 TO +125 °C)
P
ARAMETER SYMBOL MIN MAX UNITS
Memory
5
All data sheets are subject to change without notice
©2001 Maxwell Technologies
All rights reserved.
1 Megabit (128K x 8-Bit) EEPROM
28C010T
12.19.01 Rev 8
1000582
Chip Enable to Write Setup Time (WE controlled)
-120
-150
-200
t
CS
0
0
0
--
--
--
ns
Write Pulse Width
CE
controlled
-120
-150
-200
WE
controlled
-120
-150
-200
t
CW
t
WP
200
250
350
200
250
350
--
--
--
--
--
--
ns
Address Hold Time
-120
-150
-200
t
AH
150
150
200
--
--
--
ns
Data Setup Time
-120
-150
-200
t
DS
75
100
150
--
--
--
ns
Data Hold Time
-120
-150
-200
t
DH
10
10
20
--
--
--
ns
Chip Enable Hold Time (WE
controlled)
-120
-150
-2000
t
CH
0
0
0
--
--
--
ns
Write Enable to Write Setup Time (CE
controlled)
-120
-150
-200
t
WS
0
0
0
--
--
--
ns
Write Enable Hold Time (CE
controlled)
-120
-150
-200
t
WH
0
0
0
--
--
--
ns
Output Enable to Write Setup Time
-120
-150
-200
t
OES
0
0
0
--
--
--
ns
TABLE 8. 28C010T AC ELECTRICAL CHARACTERISTICS FOR PAGE/BYTE ERASE AND BYTE WRITE
O
PERATIONS
(VCC = 5V + 10%, TA = -55 TO +125 °C)
P
ARAMETER SYMBOL
MIN
1
MAX UNITS
Memory
6
All data sheets are subject to change without notice
©2001 Maxwell Technologies
All rights reserved.
1 Megabit (128K x 8-Bit) EEPROM
28C010T
12.19.01 Rev 8
1000582
Output Enable Hold Time
-120
-150
-200
t
OEH
0
0
0
--
--
--
ns
Write Cycle Time
2
-120
-150
-200
t
WC
--
--
--
10
10
20
ms
Data Latch Time
-120
-150
-200
t
DL
250
300
400
--
--
--
ns
Byte Load Window
-120
-150
-200
t
BL
100
100
200
--
--
--
µs
Byte Load Cycle
-120
-150
-200
t
BLC
0.55
0.55
0.95
30
30
30
µs
Time to Device Busy
-120
-150
-200
t
DB
100
120
170
--
--
--
ns
Write Start Time
3
-120
-150
-200
t
DW
150
150
250
--
--
--
ns
RES
to Write Setup Time
-120
-150
-200
t
RP
100
100
200
--
--
--
µs
V
CC
to RES Setup Time
4
-120
-150
-200
t
RES
1
1
3
--
--
--
µs
1. Use this device in a longer cycle than this value.
2. t
WC
must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the
internal write operation within this value.
3. Next read or write operation can be initiated after t
DW
if polling techniques or RDY/BUSY are used.
4. Gauranteed by design.
TABLE 8. 28C010T AC ELECTRICAL CHARACTERISTICS FOR PAGE/BYTE ERASE AND BYTE WRITE
O
PERATIONS
(VCC = 5V + 10%, TA = -55 TO +125 °C)
P
ARAMETER SYMBOL
MIN
1
MAX UNITS
Memory
7
All data sheets are subject to change without notice
©2001 Maxwell Technologies
All rights reserved.
1 Megabit (128K x 8-Bit) EEPROM
28C010T
12.19.01 Rev 8
1000582
FIGURE 1. READ TIMING WAVEFORM
TABLE 9. 28C010T MODE SELECTION
1
1. X = Don’t care.
P
ARAMETER CE OE WE I/O RES RDY/BUSY
Read V
IL
V
IL
V
IH
D
OUT
V
H
High-Z
Standby V
IH
X X High-Z X High-Z
Write V
IL
V
IH
V
IL
D
IN
V
H
High-Z --> V
OL
Deselect V
IL
V
IH
V
IH
High-Z V
H
High-Z
Write Inhibit X X V
IH
-- X --
XV
IL
X--X--
Data Polling V
IL
V
IL
V
IH
Data Out (I/O7) V
H
V
OL
Program X X X High-Z V
IL
High-Z
Memory
8
All data sheets are subject to change without notice
©2001 Maxwell Technologies
All rights reserved.
1 Megabit (128K x 8-Bit) EEPROM
28C010T
12.19.01 Rev 8
1000582
FIGURE 2. BYTE WRITE TIMING WAVEFORM(1) (WE CONTROLLED)
Memory
9
All data sheets are subject to change without notice
©2001 Maxwell Technologies
All rights reserved.
1 Megabit (128K x 8-Bit) EEPROM
28C010T
12.19.01 Rev 8
1000582
FIGURE 3. BYTE WRITE TIMING WAVEFORM (2) (CE CONTROLLED)
Memory
10
All data sheets are subject to change without notice
©2001 Maxwell Technologies
All rights reserved.
1 Megabit (128K x 8-Bit) EEPROM
28C010T
12.19.01 Rev 8
1000582
FIGURE 4. PAGE WRITE TIMING WAVEFORM(1) (WE CONTROLLED)
Memory
11
All data sheets are subject to change without notice
©2001 Maxwell Technologies
All rights reserved.
1 Megabit (128K x 8-Bit) EEPROM
28C010T
12.19.01 Rev 8
1000582
FIGURE 5. PAGE WRITE TIMING WAVEFORM(2) (CE CONTROLLED)
F
IGURE 6. DATA POLLING TIMING WAVEFORM
Memory
12
All data sheets are subject to change without notice
©2001 Maxwell Technologies
All rights reserved.
1 Megabit (128K x 8-Bit) EEPROM
28C010T
12.19.01 Rev 8
1000582
FIGURE 7. SOFTWARE DATA PROTECTION TIMING WAVEFORM(1) (IN PROTECTION MODE)
F
IGURE 8. SOFTWARE DATA PROTECTION TIMING WAVEFORM(2) (IN NON-PROTECTION MODE)
EEPROM APPLICATION NOTES
This application note describes the programming procedures for the EEPROM modules and with details of various
techniques to preserve data protection.
Automatic Page Write
Page-mode write feature allows 1 to 128 bytes of data to be written into the EEPROM in a single write cycle, and
allows the undefined data within 128 bytes to be written corresponding to the undefined address (A0 to A6). Loading
the first byte of data, the data load window opens 30µs for the second byte. In the same manner each additional byte
of data can be loaded within 30µs. In case CE
and WE are kept high for 100 µs after data input, EEPROM enters
erase and write mode automatically and only the input data are written into the EEPROM.
Memory
13
All data sheets are subject to change without notice
©2001 Maxwell Technologies
All rights reserved.
1 Megabit (128K x 8-Bit) EEPROM
28C010T
12.19.01 Rev 8
1000582
WE, CE Pin Operation
During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of
WE
or CE.
Data Polling
Data Polling function allows the status of the EEPROM to be determined. If EEPROM is set to read mode during a
write cycle, an inversion of the last byte of data to be loaded outputs from I/O 7 to indicate that the EEPROM is performing a write operation.
RDY/Busy Signal
RDY/Busy signal also allows a comparison operation to determine the status of the EEPROM. The RDY/Busy signal
has high impedance except in write cycle and is lowered to V
OL
after the first write signal. At the-end of a write cycle,
the RDY/Busy
signal changes state to high impedance.
RES Signal
When RES is LOW, the EEPROM cannot be read and programmed. Therefore, data can be protected by keeping
RES
low when VCC is switched. RES should be high during read and programming because it doesn’t provide a latch
function.
Data Protection
To protect the data during operation and power on/off, the EEPROM has the internal functions described below.
1. Data Protection against Noise of Control Pins (CE, OE, WE) during Operation.
Memory
14
All data sheets are subject to change without notice
©2001 Maxwell Technologies
All rights reserved.
1 Megabit (128K x 8-Bit) EEPROM
28C010T
12.19.01 Rev 8
1000582
During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming mode by mistake. To prevent this phenomenon, the EEPROM has a noise cancellation function that cuts noise if its width is 20ns or less in
programming mode. Be careful not to allow noise of a width of more than 20ns on the control pins.
2. Data Protection at V
CC
on/off
When V
CC
is turned on or off, noise on the control pins generated by external circuits, such as CPUs, may turn the EEPROM to
programming mode by mistake. To prevent this unintentional programming, the EEPROM must be kept in unprogrammable
state during V
CC
on/off by using a CPU reset signal to RES pin.
RES
should be kept at VSS level when VCC is turned on or off. The EEPROM breaks off programming operation when RES
become low, programming operation doesn’t finish correctly in case that RES
falls low during programming operation. RES
should be kept high for 10 ms after the last data input.
3. Software Data Protection
Memory
15
All data sheets are subject to change without notice
©2001 Maxwell Technologies
All rights reserved.
1 Megabit (128K x 8-Bit) EEPROM
28C010T
12.19.01 Rev 8
1000582
The software data protection function is to prevent unintentional programming caused by noise generated by external circuits.
In software data protection mode, 3 bytes of data must be input before write data as follows. These bytes can switch the nonprotection mode to the protection mode.
Software data protection mode can be canceled by inputting the following 6 bytes. Then, the EEPROM turns to the non-protection mode and can write data normally. However, when the data is input in the canceling cycle, the data cannot be written.
Memory
16
All data sheets are subject to change without notice
©2001 Maxwell Technologies
All rights reserved.
1 Megabit (128K x 8-Bit) EEPROM
28C010T
12.19.01 Rev 8
1000582
D32-02
Note: All dimensions in inches
32 PIN DUAL IN-LINE PACKAGE
SYMBOL
DIMENSION
MIN NOM MAX
A -- 0.152 0.225
b 0.014 0.018 0.026
b2 0.045 0.050 0.065
c 0.008 0.010 0.018
D -- 1.600 1.680
E 0.510 0.590 0.620
eA 0.600 BSC
eA/2 0.300 BSC
e 0.100 BSC
L 0.135 0.145 0.155
Q 0.015 0.037 0.070
S1 0.005 0.025 --
S2 0.005 -- --
N32
Memory
17
All data sheets are subject to change without notice
©2001 Maxwell Technologies
All rights reserved.
1 Megabit (128K x 8-Bit) EEPROM
28C010T
12.19.01 Rev 8
1000582
F32-10
Note: All dimensions in inches.
28C010T 32-PIN RAD-PAK® FLAT PACKAGE
SYMBOL
DIMENSION
MIN NOM MAX
A 0.121 0.134 0.147
b 0.015 0.017 0.022
c 0.004 0.005 0.009
D -- 0.820 0.830
E 0.472 0.480 0.488
E1 -- -- 0.498
E2 0.304 0.31 --
E3 0.030 0.085 --
e 0.050BSC
L 0.355 0.365 0.375
Q 0.020 0.035 0.045
S1 0.005 0.027 --
N32
Memory
18
All data sheets are subject to change without notice
©2001 Maxwell Technologies
All rights reserved.
1 Megabit (128K x 8-Bit) EEPROM
28C010T
12.19.01 Rev 8
1000582
Important Notice:
These data sheets are created using the chip manufacturers published specifications. Maxwell Technologies verifies
functionality by testing key parameters either by 100% testing, sample testing or characterization.
The specifications presented within these data sheets represent the latest and most accurate information available to
date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no
responsibility for the use of this information.
Maxwell Technologies’ products are not authorized for use as critical components in life support devices or systems
without express written approval from Maxwell Technologies.
Any claim against Maxwell Technologies must be made within 90 days from the date of shipment from Maxwell Technologies. Maxwell Technologies’ liability shall be limited to replacement of defective parts.
Memory
19
All data sheets are subject to change without notice
©2001 Maxwell Technologies
All rights reserved.
1 Megabit (128K x 8-Bit) EEPROM
28C010T
12.19.01 Rev 8
1000582
Product Ordering Options
Model Number
Feature
Option Details
28C010T
XX
F X
-XX
Access Time
Screening Flow
Package
Radiation Feature
Base Product
Nomenclature
12 = 120 ns (for example)
15 = 150 ns
20 = 200 ns
Monolithic
S = Maxwell Class S
B = Maxwell Class B
E = Engineering (testing @ +25°C
)
I = Industrial (testing @ -55°C,
+25°C, +125°C)
D = Dual In-line Package (DIP)
F = Flat Pack
RP = R
AD-PAK® package
RT1 = Guaranteed to 10 krad at
die level
RT2 = Guaranteed to 25 krad at
die level
RT4 = Guaranteed to 40 krad at
die level
1 Megabit (128k x 8-bit) EEPROM
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