Maxwell 28C010T User Manual

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28C010T

1 Megabit (128K x 8-Bit) EEPROM

FEATURES:

V

CC

V

SS

RES

OE

CE

WE

RES

A0

A6

A7

A16

High Voltage

Generator

Control Logic Timing

Address

Buffer and

Latch

DESCRIPTION:

Y Decoder

X Decoder

Logic Diagram

I/O0 I/O7 RDY/Busy

I/O Buffer and

Input Latch

Y Gating

Memory Array

Data Latch

• 128k x 8-bit EEPROM

•R

AD-PAK® radiation-hardened against natural space radia-

tion

• Total dose hardness:

- > 100 krad (Si), depending upon space mission

• Excellent Single event effects

- SEL

> 120 MeV/mg/cm

TH

2

- SEU > 90 MeV/mg/cm2 read mode

- SEU = 18 MeV/mg/cm

2

write mode

• Package:

- 32-pin R

AD-PAK® flat pack/DIP package

- JEDEC-approved byte-wide pinout

• High speed:

- 120, 150, and 200 ns maximum access times available

• High endurance:

- 10,000 erase/write (in Page Mode),

- 10 year data retention

• Page write mode:

- 1 to 128 bytes

• Low power dissipation

- 20 mW/MHz active (typical)

- 110 µW standby (maximum)

• Standard JEDEC package width

Maxwell Technologies’ 28C010T high-density 1 Megabit (128K x 8-Bit) EEPROM microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The 28C010T is capable of in-system electrical byte and page programmability. It has a 128-byte page programming function to make its erase and write operations faster. It also features data

polling and a Ready/Busy signal to indicate the completion of erase and programming operations. In the 28C010T, hardware data protection is provided with the RES pin, in addition to noise protection on the WE signal and write inhibit on power on and off. Software data protection is implemented using the JEDEC optional standard algorithm.

Maxwell Technologies' patented R

AD-PAK® packaging technol-

ogy incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, R

AD-PAK® provides greater than 100

krad(Si) radiation dose tolerance. This product is available with screening up to Class S.

(858) 503-3300- Fax: (858) 503-3301 - www.maxwell.com

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1 Megabit (128K x 8-Bit) EEPROM

TABLE 1. 28C010T PINOUT DESCRIPTION

PIN SYMBOL DESCRIPTION

12-5, 27, 26, 23, 25, 4, 28, 3, 31, 2 A0-A16 Address

13, 14, 15, 17, 18, 19, 20, 21 I/O0 - I/O7

28C010T

Data I/O 24 OE 22 CE 29 WE 32 V 16 V

CC SS

1RDY/BUSY

30 RES

Output Enable

Chip Enable

Write Enable

Power Supply

Ground

Ready/Busy

Reset

TABLE 2. 28C010T ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL MIN TYP MAX UNITS Supply Voltage (Relative to VSS)V

Input Voltage (Relative to V

)V

SS

CC

IN

Package Weight RP 7.4 Grams

RT 2.7

RD 10.9 Thermal Impedance (RP and RT Packages) F Thermal Impedance (DIP Package) F Operating Temperature Range T Storage Temperature Range T

JC

JC OPR STG

-0.6 +7.0 V

1

-0.5

+7.0 V

2.4

2.17

-55 +125

-65 +150

°

C/W

°

C/W

° °

C C

1. VIN min = -3.0V for pulse width < 50ns.

ARAMETER

P I

CC1

I

CC2

I

CC3A

I

CC3B

1. Parameters are measured and recorded as Deltas per

MIL-STD-883 for Class S Devices

2. Specified in Table 6

TABLE 3. DELTA LIMITS

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VARIATION

2

±10% ±10% ±10% ±10%

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1 Megabit (128K x 8-Bit) EEPROM

28C010T

TABLE 4. 28C010T RECOMMENDED OPERATING CONDITIONS

PARAMETER SYMBOL MIN MAX UNITS Supply Voltage V

Input Voltage

_PIN

RES

CC

V

IL

V

IH

V

H

4.5 5.5 V

1

-0.3

0.8 V

2.2 VCC +0.3

VCC -0.5 VCC +1

1. VIL min = -1.0V for pulse width < 50 ns

TABLE 5. 28C010T CAPACITANCE

(TA = 25 °C, f = 1 MHZ)

P

ARAMETER SYMBOL MIN MAX UNITS

Input Capacitance: VIN = 0V Output Capacitance: V

OUT

= 0V

1

C

IN

C

OUT

-- 6 pF

-- 12 pF

1. Guaranteed by design.

TABLE 6. 28C010T DC ELECTRICAL CHARACTERISTICS

(VCC = 5V ± 10%, TA = -55 TO +125 °C, UNLESS OTHERWISE SPECIFIED)

ARAMETER TEST CONDITION SUBGROUPS SYMBOL MIN MAX UNITS

P Input Leakage Current VCC = 5.5V, VIN = 5.5V 1, 2, 3 I

Output Leakage Current V Standby V

Current

CC

Operating V

Current I

CC

Input Voltage

RES

_PIN

Output Voltage

2

= 5.5V, V

CC

CE = V

CC

CE

= V

IH

= 0mA, Duty = 100%,

OUT

Cycle = 1µs at V I

= 0mA, Duty = 100%,

OUT

Cycle = 150ns at V

= 5.5V/0.4V 1, 2, 3 I

OUT

1, 2, 3 I

= 5.5V

CC

1, 2, 3 I

= 5.5V

CC

1, 2, 3 V

= 2.1 mA 1, 2, 3 V

I

OL

I

= - 0.4 mA V

OH

= - 0.1 mA V

I

OH

IL

LO

CC1

I

CC2

CC3A

CC3B

IL

V

IH

V

H OL OH OH

-- 2

-- 2 µA

-- 20 µA

-- 1 mA

-- 15 mA

-- 50

-- 0.8 V

2.2 --

VCC -0.5 --

-- 0.4 V

2.4 --

VCC-0.3V

1

µA

1. ILI for RES = 100uA max.

2. RDY/BSY is an open drain output. Only V

applies to this pin.

OL

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1 Megabit (128K x 8-Bit) EEPROM

28C010T

TABLE 7. 28C010T AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION

1

(VCC = 5V + 10%, TA = -55 TO +125 °C)

ARAMETER SYMBOL SUBGROUPS MIN MAX UNITS

P Address Access Time

CE

= OE = VIL, WE = V

IH

-120

-150

-200

Chip Enable Access Time OE

= VIL, WE = V

IH

-120

-150

-200

Output Enable Access Time CE

= VIL, WE = V

IH

-120

-150

-200

Output Hold to Address Change CE

= OE = VIL, WE = V

IH

-120

-150

-200

Output Disable to High-Z CE = VIL, WE = V

2

IH

-120

-150

-200

CE

= OE = VIL, WE = V

IH

-120

-150

-200

RES

to Output Delay

CE = OE = VIL, WE = V

3

IH

-120

-150

-200

t

ACC

t

CE

t

OE

t

OH

t

DF

DFR

t

RR

9, 10, 11

--

0 0 0

--

120 150 200

75 75

100

--

50 50 60

300 350 450

400 450 650

ns

1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20ns; output load - 1 TTL gate + 100pF (including scope and jig); reference levels for measuring timing - 0.8V/1.8V.

2. t

DF

and t

are defined as the time at which the output becomes an open circuit and data is no longer driven.

DFR

3. Guaranteed by design.

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1 Megabit (128K x 8-Bit) EEPROM

TABLE 8. 28C010T AC ELECTRICAL CHARACTERISTICS FOR

AGE/BYTE ERASE AND PAGE/BYTE WRITE OPERATIONS

P

(VCC = 5V + 10%, TA = -55 TO +125 °C)

28C010T

ARAMETER SYMBOL SUBGROUPS

P Address Setup Time

-120

-150

-200

Chip Enable to Write Setup Time (WE

-120

-150

-200

Write Pulse Width CE

controlled

-120

-150

-200

WE

controlled

-120

-150

-200

Address Hold Time

-120

-150

-200

controlled)

t

9, 10, 11

AS

t

CS

t

CW

t

WP

t

AH

9, 10, 11

MIN

0 0 0

200 250 350

150 150 200

1

MAX UNITS

ns

--

ns

Data Setup Time

-120

-150

-200

Data Hold Time

-120

-150

-200

Chip Enable Hold Time (WE

-120

-150

-2000

Write Enable to Write Setup Time (CE

-120

-150

-200

Write Enable Hold Time (CE

-120

-150

-200

controlled)

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t

DS

t

DH

t

CH

t

WS

t

WH

9, 10, 11

75 100 150

9, 10, 11

10

9, 10, 11

0 0 0

9, 10, 11

0 0 0

9, 10, 11

0 0 0

All data sheets are subject to change without notice

ns

--

-ns

--

ns

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1 Megabit (128K x 8-Bit) EEPROM

TABLE 8. 28C010T AC ELECTRICAL CHARACTERISTICS FOR

AGE/BYTE ERASE AND PAGE/BYTE WRITE OPERATIONS

P

(VCC = 5V + 10%, TA = -55 TO +125 °C)

28C010T

ARAMETER SYMBOL SUBGROUPS

P Output Enable to Write Setup Time

-120

-150

-200

Output Enable Hold Time

-120

-150

-200

Write Cycle Time

-120

-150

-200

Data Latch Time

-120

-150

-200

Byte Load Window

-120

-150

-200

Byte Load Cycle

-120

-150

-200

Time to Device Busy

-120

-150

-200

Write Start Time

-120

-150

-200

RES

to Write Setup Time

-120

-150

-200

V

to RES Setup Time

CC

-120

-150

-200

2

3

4

t

OES

t

OEH

t

BLC

t

RES

WC

DL

BL

DB

DW

RP

9, 10, 11

MIN

0 0 0

--

250 300 400

100 100 200

0.55

0.95

100 120 170

150 150 250

100 100 200

1 1 3

1

MAX UNITS

ns

--

-ns

--

ms 10 10 10

ns

--

-µs

--

-µs

30 30 30

ns

--

ns

--

-µs

--

-µs

--

1. Use this device in a longer cycle than this value.

06.03.03 REV 14

All data sheets are subject to change without notice

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