MAXWELL 27C512TRPDI20, 27C512TRPDI15, 27C512TRPDI12, 27C512TRPDE20, 27C512TRPDE15 Datasheet

1

Memory

All data sheets are subject to change without notice

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512K (64K x 8-Bit) OTP EPROM

27C512T

©2002 Maxwell Technologies

All rights reserved.

02.18.02 Rev 3

FEATURES:

• 64K x 8-bit OTP EPROM organization

•R

AD-PAK® radiation-hardened against natural space

radiation

• Total dose hardness:

- > 100 Krad (Si), depending upon space mission

• Excellent Single Event Effects:

-SEL

TH

> 80 MeV/mg/cm2

-SEU

TH

> 80 Mev/mg/cm2

• Package:

-32 pin R

AD-PAK® flat pack

-32 pin R

AD-PAK® DIP

• Fast access time:

- 120, 150, 200 ns (max)

• Low power dissipation:

- Active mode: 100 mW/MHz (typ)

- Standby mode: 10 µW (typ)

• High speed page and word programming:

-Page programming time: 14 sec (typ)

• Programming power supply:

- V

PP

= 12.5 V + 0.3 V

• One-time programmable

• Pin arrangement

- JEDEC standard byte-wide EPROM

- Flash memory and mask ROM compatible

DESCRIPTION:

Maxwell Technologies’ 27C512T high density 512-Kilobit one­time programmable electrically programmable read only mem­ory microcircuit features a greater than 100 krad (Si) total
dose tolerance, depending upon space mission. The 27C512T
features fast address times and low power dissipation. The
27C512T offers high speed programming using page pro­gramming mode.

Maxwell Technologies' patented R

AD-PAK® packaging technol-

ogy incorporates radiation shielding in the microcircuit pack­age. It eliminates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, R

AD-PAK provides greater than 100

krad (Si) radiation dose tolerance. This product is available
with screening up to Class S.

x-Decoder

1024 x 1022

Memory Matrix

Input
Data

Control

Y- Gating

Y - Decoder

H

A0-A4

A10-A11

OE

PGM

A5-A9

V

CC

V

PP

V

SS

A12-A16

I/O0

I/O15

H

CE

: High Threshhold Inverter

Logic Diagram

Memory

2

All data sheets are subject to change without notice

©2002 Maxwell Technologies

All rights reserved.

512K (64K x 8-Bit) OTP EPROM

27C512T

02.18.02 Rev3

TABLE 1. 27C512T PINOUT DESCRIPTION

PIN SYMBOL DESCRIPTION

1VPPProgramming Voltage

2, 30 NC Not connected

12-5, 27, 26, 23,

25, 4, 28, 29, 3

A0-A15 Address Enable

22 CE

Chip Enable

24 OE

Output Enable

13-15, 17-21 I/O0 - I/O7 Data Input/Output

16 GND Ground
31 PGM

Program

32 V

CC

+5V Power Supply

TABLE 2. 27C512T ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL MIN MAX UNIT
Supply Voltage

1

1. Relative to VSS.

V

CC

-0.6 +7.0 V

Programming Voltage

1

V

PP

-0.6 +13.5 V

All Input and Output Voltage

1,2

2. VIN, V

OUT

, and VID min = -1.0V for pulse width < 20 ns.

V

IN

, V

OUT

-0.6 +7.0 V

A9 and OE

Voltage V

ID

-0.6 13.0 V

Operating Temperature Range T

OPR

-55 +125

°

C

Storage Temperature Range T

STG

-65 +125

°

C

TABLE 3. DELTA LIMITS

PARAMETER VARIATION

ICC1 ±10%
I

CC

2 ±10%

I

CC

3A ±10%

I

CC

3B ±10%

Memory

3

All data sheets are subject to change without notice

©2002 Maxwell Technologies

All rights reserved.

512K (64K x 8-Bit) OTP EPROM

27C512T

02.18.02 Rev3

TABLE 4. 27C512T RECOMMENDED OPERATING CONDITIONS

PARAMETER SUBGROUPS SYMBOL MIN MAX UNITS
Supply Voltage 1 V

CC

4.5 5.5 V

Input Voltage 1 V

IL

-0.3

1

1. VIL min = -1.0V for pulse width < 50 ns.

0.8 V

1V

IH

2.2 VCC +1

2

2. V

IH

max = VCC + 1.5V for pulse width < 20 ns.

Thermal Impedance — DIP Package 1

Θ

JC

-- 1.26 °C/W

Thermal Impedance — Flat Package 1

Θ

JC

-- 1.27 °C/W

Operating Temperature Range 1 T

OPR

-55 +125

°

C

TABLE 5. 27C512T CAPACITANCE

1

1. Guaranteed by design.

PARAMETER SYMBOL MIN MAX UNIT
Input Capacitance C

IN

-- 10 pF

Output Capacitance C

OUT

-- 15 pF

TABLE 6. 27C512T DC ELECTRICAL CHARACTERISTICS FOR READ OPERATION

(VCC = 5V + 10%, VPP = VSS TO VCC, TA = -55 TO +125 °C, UNLESS OTHERWISE SPECIFIED)

PARAMETER TEST CONDITION S

UBGROUPS SYMBOL MIN TYP MAX UNIT

Input Leakage Current V

IN

= 5.5 V 1, 2, 3 I

LI

-- -- 2 µA

Output Leakage Current V

OUT

= 5.5 V/0.45 V 1, 2, 3 I

LO

-- -- 2 µA

Standby V

CC

Current CE = V

IH

1, 2, 3 I

SB

-- -- 1 mA

Operating V

CC

Current I

OUT

= 0 mA, CE = V

IL

1, 2, 3 I

CC1

-- -- 30 mA

I

OUT

= 0 mA, f = 5 MHz 1, 2, 3 I

CC2

-- -- 30

I

OUT

= 0 mA, f = 10 MHz 1, 2, 3 I

CC3

-- -- 50

V

PP

Current VPP = 5.5 V 1, 2, 3 I

PP1

-- 1 20 µA

Input Voltage 1, 2, 3 V

IH

2.2 -- -- V

1, 2, 3 V

IL

-- 0.8

Output Voltage I

OH

= -400µA 1, 2, 3 V

OH

2.4 -- -- V

I

OL

= 2.1 mA 1, 2, 3 V

OL

-- -- 0.45

Memory

4

All data sheets are subject to change without notice

©2002 Maxwell Technologies

All rights reserved.

512K (64K x 8-Bit) OTP EPROM

27C512T

02.18.02 Rev3

TABLE 7. 27C512T AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION 1,

2

(VCC = 5V + 10%, VPP = VSS TO VCC, TA = -55 TO +125 °C, UNLESS OTHERWISE SPECIFIED)

1. t

DF

is defined as the time at which the output becomes an open circuit and data is no longer driven.

2. AC electrical parameters for programming operations are not tested. These are guaranteed by design.

PARAMETER TEST CONDITION S

UBGROUPS SYMBOL MIN MAX UNIT

Address Access Time

-120

-150

-200

CE

= OE = V

IL

9, 10, 11 t

ACC

--

--

--

120
150
200

ns

Chip Enable Access Time

-120

-150

-200

OE

= V

IL

9, 10, 11 t

CE

--

--

--

120
150
200

ns

Output Enable Access Time

-120

-150

-200

CE

= V

IL

9, 10, 11 t

OE

--

--

--

60
70
70

ns

Output Hold to Address Change

-120

-150

-200

CE

= V

IL

9, 10, 11 t

OH

0
0
0

--

--

--

ns

Output Disable to High-Z

3

-120

-150

-200

3. Test conditions:

- Input pulse levels 0.45V/2.4V

- Input rise and fall times < 10 ns

- Output load 1TTL Fate + 100 pF (including scope and jig)

- Referenced levels for measuring timing 0.8V/2.0V

CE

= OE = VIL 9, 10, 11 t

DF

0
0
0

50
50
50

ns

Memory

5

All data sheets are subject to change without notice

©2002 Maxwell Technologies

All rights reserved.

512K (64K x 8-Bit) OTP EPROM

27C512T

02.18.02 Rev3

TABLE 8. 27C512T AC ELECTRICAL CHARACTERISTICS FOR PROGRAMMING OPERATION

1,2

(VCC = 6.0V + 0.25V, VPP = 12.5V + 0.3V, TA = 25 °C)

1. t

DF

is defined as the time at which the output becomes an open circuit and data is no longer driven.

2. AC electrical parameters for programming operations are not tested. These are guaranteed by design.

PARAMETER S

UBGROUPS SYMBOL MIN TYP MAX UNIT

Address Setup Time 9 t

AS

2----µs

Address Hold Time 9 t

AH

0----µs

Data Setup Time 9 t

DS

2----µs

Data Hold Time 9 t

DH

2----µs

V

PP

Setup Time 9 t

VPS

2----µs

V

CC

Setup Time 9 t

VCS

2----µs

Output Enable Setup Time 9 t

OES

2----µs

Output Disable Time 9 t

DF

3

3. Test Conditions:

- Input pulse levels 0.45V/2.4V

- Input rise and fall times < 20 ns

- Referenced levels for measuring timing 0.8V/2.0V

0 -- 130 ns

CE

Initial Programming Pulse Width 9 t

PW

0.19 0.20 0.21 ms

CE

Overprogramming Pulse Width 9 t

OPW

0.19 -- 5.25 ms

Output Enable Hold Time 9 t

OEH

2----µs

V

PP

Recovery Time 9 t

VR

2----µs

Data Valid from Chip Enable 9 t

DV

1----µs

TABLE 9. 27C512T DC ELECTRICAL CHARACTERISTICS FOR PROGRAMMING OPERATIONS

1,2,3,4

(VCC = 6.0V + 0.25V, VPP = 12.5V + 0.3V, TA = 25 °C)

1. V

CC

must be applied before VPP and removed after VPP.

2. V

PP

must not exceed 13V, including overshoot.

3. Do not change V

PP

from VIL to 12.5V or 12.5V to VIL when CE = low.

4. DC electrical parameters for programming operations are not tested. These are guaranteed by design.

PARAMETER TEST CONDITION S

UBGROUPS SYMBOL MIN MAX UNIT

Input Leakage Current V

IN

=0V to V

CC

1ILI-- 2 µA

Operating V

CC

Current 1 I

CC

-- 30 mA

Operating V

PP

Current CE=PGM=V

IL

1IPP-- 40 mA

Input Voltage

5

5. Device reliability may be adversely affected if the device is installed or removed while V

PP

= 12.5V.

1V

IH

2.2 VCC+0.5

6

V

1V

IL

-0.1

7

0.8

Output Voltage I

OH

=-400µA 1 V

OH

2.4 -- V

I

OH

= 2.1mA 1 V

OL

-- 0.45