MAXWELL 27C1512TRPDK, 27C1512TRPDI, 27C1512TRPDH, 27C1512TRPDE Datasheet

A12

A16

27C1512T

512Kb (32K x 16-bit)

OTP EPROM MCM

A5

A9

X-Decoder

1024 x 512

Memory Matrix

FEATURES:

• 32K x 16 Bit OTP EPROM organization

•R

AD-PAK® radiation-hardened against natural space radia-

tion

• Total dose hardness:

- > 100 Krad (Si), depending upon space mission

• Excellent Single Event Effects:

- SEL

LET: > 80 MeV/mg/cm

TH

- SEUTH LET: > 80 Mev/mg/cm

• Package:

- 40 pin R

AD-PAK DIP

• Low power consumption:

- Active mode: 500 mW @ 10 MHz

- Standby mode: < 11 mW

• High speed page and word programming:

- Page programming time: 14 sec (typ)

• Programming power supply:

- V

= 12.5 V ± 0.3 V

PP

• One-time Programmable

• Pin Arrangement

- Flash memory and mask ROM compatible

2

I/O0

I/O7

PGM

CE

OE

V

CC

V

PP

V

SS

H

Input Data

Control

: High Threshold Inverter

H

Y-Gating

Y-Decoder

A0-A4 A10-A11

Logic Diagram

DESCRIPTION:

Maxwell Technologies’ 27C1512T high density 512K OneTime Programmable Electrically Programmable Read Only Memory multi-chip module (MCM) features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The 27C1512T features fast address times and low power dissipation. The 27C1512T offers high speed programming using page programming mode. The 27C1512T is offered in JEDEC-Standard Byte-Wide EPROM pinouts, which allows socket replacement with flash memory and mask ROMs.

Maxwell Technologies' patented R ogy incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, R krad (Si) radiation dose tolerance. This product is available with screening up to Class K.

AD-PAK® packaging technol-

AD-PAK provides greater than 100

Memory

1000569

(858) 503-3300- Fax: (858) 503-3301- www.maxwell.com

12.19.01 Rev 2

All data sheets are subject to change without notice

1

512Kb (32K x 16-bit) - OTP EPROM MCM

TABLE 1. 27C1512T PINOUT DESCRIPTION

PIN SYMBOL DESCRIPTION

21-29, 31-36 A0 - A14 Address

19-12, 10-3 I/O0 - I/O15 Input/Output

27C1512T

2

20

40 V

1V

30 V

39

CE Chip Enable

OE Output Enable

CC

PP

SS

Power Supply

Programming Supply

Ground

PGM Programming Enable

37, 38 NC No Connection

TABLE 2. 27C1512T ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL MIN MAX UNIT

Supply Voltage

Programming Voltage

All Input and Output Voltage

A9 Voltage

Operating Temperature Range T

Storage Temperature Range T

1

1,2

2

V

CC

V

PP

, V

V

IN

OUT

V

ID

OPR

STG

-0.6 7.0 V

-0.6 13.5 V

-0.6 7.0 V

-0.6 13.0 V

-55 +125 °C

-65 +150 °C

Memory

1. Relative to VSS.

2. VIN, V

, and VID min = -1.0V for pulse width < 20 ns.

OUT

TABLE 3. 27C1512T RECOMMENDED OPERATING CONDITIONS

PARAMETER SYMBOL MIN MAX UNITS

Supply Voltage V

Input Voltage V

Thermal Impedance

Operating Temperature Range T

1000569

12.19.01 Rev 2

CC

IL

V

IH

Θ

JC

OPR

All data sheets are subject to change without notice

4.5 5.5 V

-0.3 0.8 V

2.2 VCC +0.3 V

-- 1.23 °C/W

-55 +125

°

C

2

512Kb (32K x 16-bit) - OTP EPROM MCM

27C1512T

TABLE 4. 27C1512T CAPACITANCE

ARAMETER SYMBOL MIN MAX UNIT

P

Input Capacitance C

Output Capacitance C

1. VIN = V

2. T

A

= 0V.

OUT

= 25 oC, f = 1 MHz.

OUT

1,2, 3

IN

-- 10 pF

-- 15 pF

3. Guaranteed by design.

TABLE 5. 27C1512T MODE SELECTION

ODE V

M

R

EAD V

OUTPUT DISABLE V

S

TANDBY V

P

ROGRAM V

PROGRAM VERIFY V

PAGE DATA LATCH V

PAGE PROGRAM V

P

ROGRAM INHIBIT V

I

DENTIFIER V

PP

CC

PP

CC

V

PP

V

PP

V

PP

CC

V

CC

V

CC

V

CC

V

CC

V

CC

V

SS

V

CC

V

CC

V

CC

V

CC

V

CC

V

CC

V

CC

CE OE PGM A

V

IL

V

IL

V

IH

V

IL

V

IL

V

IH

V

IH

V

IL

V

IL

V

IH

V

IH

V

IL

1,2

0

V

IL

V

IH

V

PP

V

IH

XD

X High-Z

X X X High-Z

V

IH

V

IL

V

IL

V

IH

V

IL

V

IH

V

IL

V

IH

V

IL

V

IL

V

IH

V

IH

V

IL

V

IL

V

IH

V

IL

V

IH

V

IH

XD

X High-Z

V

IH

I/O

OUT

Memory

IN

OUT

IN

ID

1. X = Don’t care.

2. 11.5V <

1000569

VIN < 12.5V.

12.19.01 Rev 2

All data sheets are subject to change without notice

3

512Kb (32K x 16-bit) - OTP EPROM MCM

27C1512T

TABLE 6. 27C1512T DC ELECTRICAL CHARACTERISTICS FOR READ OPERATION

(VCC = 5V ±10%, VPP = VSS, TA = -55 TO +125°C, UNLESS OTHERWISE SPECIFIED)

P

ARAMETER TEST CONDITION SYMBOL MIN TYP MAX UNIT

Input Leakage Current VIN = 5.5V

V

@ 0V

IN

Output Leakage Current High Low

Standby V

Operating V

V

Current VPP = 5.5V I

PP

Current CE = V

CC

Current I

CC

V

= 5.5V

OUT

V

= 0.45V

OUT

IH

= 0 mA, CE = V

OUT

I

= 0 mA, f = 5 MHz I

OUT

I

= 0 mA, f = 10 MHz I

OUT

IL

Input Voltage V

Output Voltage I

= -800 µA V

OH

I

= 4.2 mA V

OL

TABLE 7. 27C1512T AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION

(VCC = 5V + 10%, VPP = VSS, TA = -55 TO +125°C, UNLESS OTHERWISE SPECIFIED)

I

V

I I

I

OH

I

CC1

CC2

CC3

PP1

LI

-4

--

OL

SB

-4.0

-- -- 2 mA

--

2

--

µA µA

µA

4

--

-- -- 60 mA

-- -- 60

-- -- 100

-- 1 40 µA

IH1

IL1

OH

OL

2.2----V

-- -- 0.8

2.4----V

-- -- 0.45

Memory

1

P

ARAMETER TEST CONDITION SYMBOL MIN MAX UNIT

Address Access Time CE = OE = V

Chip Enable Access Time OE

Output Enable Access TIme CE

Output Hold to Address Change CE

Output Disable to High-Z

2

= V

CE

= OE = V

IL

t

ACC

t

OH

CE

OE

DF

-- 200 ns

-- 70 ns

0--ns

050ns

1. Test conditions:

- Input pulse levels 0.45V/2.4V

- Input rise and fall times < 10 ns

- Output load 1 TTL gate + 100pF (including scope and jig)

- Referenced levels for measuring timing0.8V/2.0V

2. tDF is defined as the time at which the output becomes an open circuit and data is no longer driven.

1000569

12.19.01 Rev 2

All data sheets are subject to change without notice

4