MAXWELL 27C010TRT4S20, 27C010TRT4S15, 27C010TRT4S12, 27C010TRT4I20, 27C010TRT4I15 Datasheet
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1
Memory
All data sheets are subject to change without notice
(858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com
1 Megabit (128K x 8-Bit) -
OTP EPROM
27C010T
©2001 Maxwell Technologies
All rights reserved.
12.12.01 Rev 2
FEATURES:
• 128k x 8 Bit OTP EPROM organization
•R
AD-PAK® radiation-hardened against natural space radia-
tion
• Total dose hardness:
- >100 krad (Si), depending upon space mission
• Excellent Single Event Effects:
- SEL
TH
LET: > 80 MeV/mg/cm2
- SEU
TH
LET (read mode): >80 Mev/mg/cm
2
• Package:
- 32 pin R
AD-PAK® flat pack
- Weight - 6.0 grams
• Fast access time:
- 120, 150, 200 ns (max) times available
• Low power consumption:
- Active mode: 50 mW/MHz (typ)
- Standby mode: 5µW (typ)
• High speed page and word programming:
- Page programming time: 14 sec (typ)
• Programming power supply:
- V
PP
= 12.5 V ± 0.3 V
• One-time Programmable
• Pin Arrangement
- JEDEC standard byte-wide EPROM
- Flash memory and mask ROM compatible
DESCRIPTION:
Maxwell Technologies’ 27C010T high density 1 Megabit
One-time Programmable Electrically Programmable Read
Only Memory microcircuit features a greater than 100 krad (Si)
total dose tolerance, depending upon space mission. The
27C010T features fast address times and low power dissipation. The 27C010T offers high speed programming using page
programming mode. The 27C010T is offered in JEDEC-Standard Byte-Wide EPROM pinouts, which allows socket replacement with Flash Memory and Mask ROMs.
Maxwell Technologies' patented R
AD-PAK® packaging technol-
ogy incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, R
AD-PAK provides greater than 100
krad (Si) radiation dose tolerance. This product is available
with screening up to Class S.
1024 x 1024
Memory Matrix
X-Decoder
Input
Data
Control
Y-Gating
Y-Decoder
H
H
: High Threshold Inverter
V
SS
V
PP
V
CC
PGM
OE
CE
I/O7
I/O0
A16
A12
A9
A5
A0-A4 A10-A11
1
16 17
32 V
CC
PGM
NC
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3V
SS
I/O2
I/O1
I/O0
A1
A0
A2
A3
A4
A5
A6
A7
A12
A15
A16
V
PP
27C010T
Logic Diagram
Memory
2
All data sheets are subject to change without notice
©2001 Maxwell Technologies
All rights reserved.
1 Megabit (128K x 8-Bit) - OTP EPROM
27C010T
12.12.01 Rev 2
TABLE 1. 27C010T PINOUT DESCRIPTION
PIN SYMBOL DESCRIPTION
12-5, 27, 26, 23, 25,
4, 28, 29, 3 ,2
A0 - A16 Address
I/O0 - I/O7 Input/Output
22 CE
Chip Enable
24 OE
Output Enable
32 V
CC
Power Supply
1V
PP
Programming Supply
16 V
SS
Ground
31 PGM
Programming Enable
30 NC No Connection
TABLE 2. 27C010T ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL MIN MAX UNIT
Supply Voltage
1
1. Relative to VSS.
V
CC
-0.6 7.0 V
Programming Voltage
1
V
PP
-0.6 13.5 V
All Input and Output Voltage
1,2
2. VIN, V
OUT
, and VID min = -1.0V for pulse width < 20 ns.
V
IN
, V
OUT
-0.6 7.0 V
A9 Voltage
2
V
ID
-0.6 13.0 V
Operating Temperature Range T
A
-55 +125
°
C
Storage Temperature Range T
S
-65 +150
°
C
TABLE 3. DELTA LIMITS
PARAMETER VARIATION
ICC1 ±10% of value specified on Table 6
I
CC
2 ±10% of value specified on Table 6
I
CC
3 ±10% of value specified on Table 6
ISB ±10% of value specified on Table 6
Memory
3
All data sheets are subject to change without notice
©2001 Maxwell Technologies
All rights reserved.
1 Megabit (128K x 8-Bit) - OTP EPROM
27C010T
12.12.01 Rev 2
TABLE 4. 27C010T RECOMMENDED OPERATING CONDITIONS
PARAMETER SYMBOL MIN MAX UNITS
Supply Voltage V
CC
4.5 5.5 V
Input Voltage V
IL
-0.3
1
1. VIL min = -1.0V for pulse width < 50 ns.
0.8 V
V
IH
2.2 VCC +1
2
2. V
IH
max = VCC + 1.5V for pulse width < 20 ns.
Thermal Impedance
Θ
JC
-- 1.27 °C/W
Operating Temperature Range T
A
-55 +125
°
C
TABLE 5. 27C010T CAPACITANCE
1
1. Guaranteed by design.
P
ARAMETER SYMBOL MIN MAX UNIT
Input Capacitance C
IN
-- 10 pF
Output Capacitance C
OUT
-- 15 pF
TABLE 6. 27C010T DC ELECTRICAL CHARACTERISTICS FOR READ OPERATION
(VCC = 5V ± 10%, VPP = VSS, TA = -55 TO +125 °C, UNLESS OTHERWISE SPECIFIED)
P
ARAMETER SYMBOL TEST CONDITION
SUB
G
ROUPS
MIN TYP MIN UNIT
Input Leakage Current I
LI
VIN = 5.5V 1, 2, 3 -- -- 2 µA
Output Leakage Current I
LO
V
OUT
= 5.5V/0.45V 1, 2, 3 -- -- 2 µA
Standby V
CC
Current I
SB
CE = V
IH
1, 2, 3 -- -- 1 mA
Operating V
CC
Current I
CC1IOUT
= 0 mA, CE = V
IL
1, 2, 3 -- -- 30 mA
I
CC2IOUT
= 0 mA, f = 5 MHz 1, 2, 3 -- -- 30
I
CC3IOUT
= 0 mA, f = 10 MHz 1, 2, 3 -- -- 50
V
PP
Current I
PP1
VPP = 5.5V 1, 2, 3 -- 1 20 µA
Input Voltage V
IH
1, 2, 3 2.2 -- -- V
V
IL
1, 2, 3 -- -- 0.8
Output Voltage V
OHIOH
= -400 µA 1, 2, 3 2.4 -- -- V
V
OLIOL
= 2.1 mA 1, 2, 3 -- -- 0.45
Memory
4
All data sheets are subject to change without notice
©2001 Maxwell Technologies
All rights reserved.
1 Megabit (128K x 8-Bit) - OTP EPROM
27C010T
12.12.01 Rev 2
TABLE 7. 27C010T AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION
1
(VCC = 5V ± 10%, VPP = VSS, TA = -55 TO +125 °C, UNLESS OTHERWISE SPECIFIED)
1. Test conditions:
- Input pulse levels 0.45V/2.4V
- Input rise and fall times
< 10 ns
- Output load 1 TTL gate + 100 pF (including scope and jig)
- Referenced levels for measuring timing 0.8V/2.0V
P
ARAMETER TEST CONDITION SYMBOL SUB GROUPS MIN MAX UNIT
Address Access Time
- 120
- 150
- 200
CE
= OE = V
IL
t
ACC
9, 10, 11
--
--
--
120
150
200
ns
Chip Enable Access Time
- 120
- 150
- 200
OE
= V
IL
t
CE
9, 10, 11
--
--
--
120
150
200
ns
Output Enable Access TIme
- 120
- 150
- 200
CE
= V
IL
t
OE
9, 10, 11
--
--
--
60
70
70
ns
Output Hold to Address Change
- 120
- 150
- 200
CE
= V
IL
t
OH
9, 10, 11
0
0
0
--
--
--
ns
Output Disable to High-Z
2
- 120
- 150
- 200
2. t
DF
is defined as the time at which the output becomes an open circuit and data is no longer driven.
CE
= OE = V
IL
t
DF
9, 10, 11
0
0
0
50
50
50
ns
Memory
5
All data sheets are subject to change without notice
©2001 Maxwell Technologies
All rights reserved.
1 Megabit (128K x 8-Bit) - OTP EPROM
27C010T
12.12.01 Rev 2
TABLE 8. 27C010T DC ELECTRICAL CHARACTERISTICS FOR PROGRAMMING OPERATIONS
1,2,3,4
(VCC = 6.25V + 0.25V, VPP = 12.5V + 0.3V, TA = 25°C)
1. V
CC
must be applied before VPP and removed after VPP.
2. V
PP
must not exceed 13V, inlcuding overshoot.
3. Do not change V
PP
from VIL to 12.5V or 12.5V to VIL when CE =LOW.
4. DC electrical paramters for programming operations are not tested. These parameters are guaranteed by design.
P
ARAMETER SYMBOL TEST CONDITION SUB GROUPS MIN MAX UNIT
Input Leakage Current I
LI
VIN = 0V to V
CC
1, 2, 3 -- 2 µA
Operating V
CC
Current I
CC
1, 2, 3 -- 30 mA
Operating V
PP
Current I
PP
CE = PGM = V
IL
1, 2, 3 -- 40 mA
Input Voltage
5
5. Device reliability may be adversely affected if the device is installed or removed while VPP = 12.5V.
V
IH
1, 2, 3 2.2 VCC +5
6
6. If VIH is over the specified maximum value, programming operation can not be guaranteed.
V
V
IL
1, 2, 3 -0.1
7
7. VIL min = -0.6V for pulse width < 20 ns.
0.8
Output Voltage V
OH
IOH = -400 µA 1, 2, 3 2.4 -- V
V
OL
IOH = 2.1 mA 1, 2, 3 -- 0.45
TABLE 9. 27C010T AC ELECTRICAL CHARACTERISTICS FOR PROGRAMMING OPERATIONS
1,2
(VCC = 6.25V + 0.25V, VPP = 12.5V ± 0.3V, TA = 25°C)
P
ARAMETER SYMBOL SUB GROUPS MIN TYP MAX UNIT
Address Setup Time t
AS
9, 10, 11 2 -- -- µs
Address Hold Time t
AH
9, 10, 11 0 -- -- µs
Data Setup Time t
DS
9, 10, 11 2 -- -- µs
Data Hold Time t
DH
9, 10, 11 2 -- -- µs
Chip Enable Setup TIme t
CES
9, 10, 11 2 -- -- µs
V
PP
Setup Time t
VPS
9, 10, 11 2 -- -- µs
V
CC
Setup Time t
VCS
9, 10, 11 2 -- -- µs
Output Enable Setup Time t
OES
9, 10, 11 2 -- -- µs
Output Disable Time t
DF
9, 10, 11 0 -- 130 ns
PGM
Initial Programming Pulse Width t
PW
9, 10, 11 0.19 0.20 0.21 ms
PGM
Overprogramming Pulse Width t
OPW
9, 10, 11 0.19 -- 5.25 ms
Data Valid from Output Enable Time t
OE
9, 10, 11 0 -- 150 ns
Output Enable Pulse During Data Latch t
LW
9, 10, 11 1 -- -- µs
Output Enable Hold Time t
OEH
9, 10, 11 2 -- -- µs
Chip Enable Hold Time t
CEH
9, 10, 11 2 -- -- µs
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