NOTE 1: V+ and V- can have maximum magnitudes of 7V, but their absolute difference cannot exceed 13V.
These are stress ratings only and functional operation
of the device at these ratings or any other above those
indicated in the operation sections of the specifi cations
below is not implied. Exposure to absolute maximum
rating conditions for extended periods of time may
affect reliability and cause permanent damage to the
device.
V
CC
.......................................................-0.3V to +6.0V
V+ (NOTE 1).......................................-0.3V to +7.0V
V- (NOTE 1)........................................+0.3V to -7.0V
V+ + |V-| (NOTE 1)...........................................+13V
I
CC
(DC VCC or GND current).........................+100mA
Input Voltages
TxIN, EN..............................................-0.3V to +6.0V
RxIN...................................................................+23V
Output Voltages
TxOUT.............................................................+13.2V
RxOUT, .......................................-0.3V to (V
CC
+0.3V)
Short-Circuit Duration
TxOUT....................................................Continuous
Storage Temperature......................-65°C to +150°C
Unless otherwise noted, the following specifi cations apply for VCC = +3.0V to +5.5V with T
AMB
= T
MIN
to T
MAX
,
C1 - C4 = 0.1µF.
Power Dissipation per package
20-pin SSOP (derate 9.25mW/oC above +70oC)..............750mW
18-pin SOIC (derate 15.7mW/oC above +70oC)..............1260mW
20-pin TSSOP (derate 11.1mW/oC above +70oC).............890mW
16-pin SSOP (derate 9.69mW/oC above +70oC)...............775mW
16-pin Wide SOIC (derate 11.2mW/oC above +70oC)........900mW
16-pin TSSOP (derate 10.5mW/oC above +70oC)..............850mW
16-pin nSOIC (derate 13.57mW/oC above +70oC)...........1086mW
Maximum Junction Te mperature .......................................+125°C
Thermal Resistance Θ
JA
..............................................100.4°C/W
Thermal Resistance Θ
JC
................................................19.0°C/W
ELECTRICAL CHARACTERISTICS
PARAMETER MIN. TYP. MAX. UNITS CONDITIONS
DC CHARACTERISTICS
Supply Current 0.3 1.0 mA no load, V
CC
= 3.3V,
T
AMB
= 25oC, TxIN = GND or V
CC
Shutdown Supply Current 1.0 10 µA SHDN = GND, VCC = 3.3V,
T
AMB
= 25oC, TxIN = Vcc or GND
LOGIC INPUTS AND RECEIVER OUTPUTS
Input Logic Threshold LOW GND 0.8 V TxIN, EN, SHDN, Note 2
Input Logic Threshold HIGH 2.0 Vcc V Vcc = 3.3V, Note 2
Input Logic Threshold HIGH 2.4 Vcc V Vcc = 5.0V, Note 2
Input Leakage Current +0.01 +1.0 µA TxIN, EN, SHDN,
T
AMB
= +25oC, VIN = 0V to V
CC
Output Leakage Current +0.05 +10 µA Receivers disabled, V
OUT
= 0V to V
CC
Output Voltage LOW 0.4 V I
OUT
= 1.6mA
Output Voltage HIGH V
CC
-0.6 VCC -0.1 V I
OUT
= -1.0mA
DRIVER OUTPUTS
Output Voltage Swing +5.0 +5.4 V All driver outputs loaded with 3kΩ to
GND, T
AMB
= +25oC
NOTE 2: Driver Input hysteresis is typically 250mV.
ABSOLUTE MAXIMUM RATINGS
2
Exar Corporation 48720 Kato Road, Fremont CA, 94538 • 510-668-7017 • www.exar.com SP3222EB/SP3232EB_104_052615