MAXIM MX7575, MX7576 User Manual

19-0876; Rev 1; 5/96
CMOS, µP-Compatible, 5µs/10µs, 8-Bit ADCs
_______________General Description
Maxim’s MX7575/MX7576 are high-speed (5µs/10µs), microprocessor (µP) compatible, 8-bit analog-to-digital converters (ADCs). The MX7575 provides an on-chip track/hold function that allows full-scale signals up to 50kHz (386mV/µs slew rate) to be acquired and digi­tized accurately. Both ADCs use a successive-approxi­mation technique to achieve their fast conversions and low power dissipation. The MX7575/MX7576 operate with a +5V supply and a 1.23V external reference. They accept input voltages ranging from 0V to 2V
REF
.
The MX7575/MX7576 are easily interfaced to all popu­lar 8-bit µPs through standard CS and RD control sig­nals. These signals control conversion start and data access. A BUSY signal indicates the beginning and end of a conversion. Since all the data outputs are latched and three-state buffered, the MX7575/MX7576 can be directly tied to a µP data bus or system l/O port.
Maxim also makes the MAX165, a plug-in replacement for the MX7575 with an internal 1.23V reference. For applications that require a differential analog input and an internal reference, the MAX166 is recommended.
________________________Applications
Digital Signal Processing High-Speed Data Acquisition Telecommunications Audio Systems High-Speed Servo Loops Low-Power Data Loggers
_________________Pin Configurations
____________________________Features
Fast Conversion Time: 5µs (MX7575)
10µs (MX7576)
Built-In Track/Hold Function (MX7575)Low Total Unadjusted Error (±1LSB max)50kHz Full-Power Signal Bandwidth (MX7575)Single +5V Supply Operation8-Bit µP Interface100ns Data-Access TimeLow Power: 15mWSmall-Footprint Packages
______________Ordering Information
PART
MX7575JN
MX7575KN MX7575JCWN 0°C to +70°C MX7575KCWN 0°C to +70°C 18 Wide SO MX7575JP 0°C to +70°C 20 PLCC MX7575KP 0°C to +70°C 20 PLCC MX7575J/D 0°C to +70°C Dice* ±1 MX7575AQ -25°C to +85°C 18 CERDIP** MX7575BQ -25°C to +85°C 18 CERDIP**±1±1/2
TEMP. RANGE PIN-PACKAGE
0°C to +70°C 0°C to +70°C
18 Plastic DIP 18 Plastic DIP 18 Wide SO
Ordering Information continued at end of data sheet.
* Contact factory for dice specifications. ** Contact factory for availability.
INL
(LSB)
±1 ±1/2 ±1 ±1/2 ±1 ±1/2
_______________Functional Diagrams
MX7575/MX7576
V
TOP VIEW
1
CS
2
RD
TP (MODE)
BUSY
CLK
D7 (MSB)
D6 D5
DGND
( ) ARE FOR MX7576 ONLY.
Pin Configurations continued at end of data sheet.
MX7575
3
MX7576
4 5 6 7 8 9
DIP/SO
________________________________________________________________
18 17 16 15 14 13 12 11 10
V
DD
REF AIN AGND D0 (LSB) D1 D2 D3 D4
MX7575
16
AIN
15
AGND
17
REF
CLOCK
5
CLK
Functional Diagrams continued at end of data sheet.
OSCILLATOR
1
CS
2
RD
3
TP
TRACK/
HOLD
CONTROL
LOGIC
49
BUSY DGND
Maxim Integrated Products
DAC
SAR
DD
18
COMP
LATCH AND
THREE-STATE
OUTPUT DRIVERS
6
D7
.
.
D0
14
1
For free samples & the latest literature: http://www.maxim-ic.com, or phone 1-800-998-8800
CMOS, µP-Compatible, 5µs/10µs, 8-Bit ADCs
ABSOLUTE MAXIMUM RATINGS
VDDto AGND...............................................................-0.3V, +7V
to DGND ..............................................................-0.3V, +7V
V
DD
AGND to DGND...............................................-0.3V, V
Digital Input Voltage to DGND
(CS, RD, TP, MODE)......................................-0.3V, V
Digital Output Voltage to DGND
(BUSY, D0–D7)..............................................-0.3V, V
CLK Input Voltage to DGND............................-0.3V, V
REF to AGND...................................................-0.3V, V
AIN to AGND....................................................-0.3V, V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
DD
DD
DD DD DD DD
+ 0.3V + 0.3V + 0.3V
+ 0.3V + 0.3V + 0.3V
Continuous Power Dissipation (T
Plastic DIP (derate 11.11mW/°C above +70°C)...............889mW
= +70°C)
A
Wide SO (derate 9.52mW/°C above +70°C)..................762mW
CERDIP (derate 10.53mW/°C above +70°C).................842mW
PLCC (derate 10.00mW/°C above +70°C) ....................800mW
Operating Temperature Ranges
MX757_J/K............................................................0°C to +70°C
MX757_A/B........................................................-25°C to +85°C
MX757_JE/KE ....................................................-40°C to +85°C
MX757_S/T.......................................................-55°C to +125°C
Storage Temperature Range.............................-65°C to +160°C
Lead Temperature (soldering,10sec)..............................+300°C
MX7575/MX7576
ELECTRICAL CHARACTERISTICS
(VDD= +5V; V
= T
T
to T
A
MIN
ACCURACY
ANALOG INPUT
Voltage Range
REFERENCE INPUT
Reference Voltage Reference Current
LOGIC INPUTS CS, RD, MODE
Input Low Voltage Input High Voltage
Input Current µA Input Capacitance (Note 2)
= 1.23V; AGND = DGND = 0V; f
REF
, unless otherwise noted.)
MAX
TUETotal Unadjusted Error
INLRelative Accuracy
REF REF
INL INH
I
IN
IN
= 4MHz external for MX7575; f
CLK
CONDITIONS
MX757_K/B/T MX757_J/A/S MX757_K/B/T MX757_J/A/S
1LSB = 2V
REF
/256
MX7575 MX7575, VIN= 2.46V
at 10kHz, Figure 13
p-p
±5% variation for specified performance
V
IN
= 0V or V
DD
TA= +25°C TA= T
MIN
to T
MAX
= 2MHz external for MX7576;
CLK
±1 ±2
±1/2
±1
REF
±1
±10
UNITSMIN TYP MAXSYMBOLPARAMETER
ppm/°C±5Full-Scale Tempco
ppm/°C±5Offset Tempco
Bits8Resolution
LSB
LSB
Bits8No-Missing-Codes Resolution
LSB±1Full-Scale Error
LSB±1/2Offset Error (Note 1)
V02V
M10DC Input Impedance
V/µs0.386Slew Rate, Tracking
dB45SNRSignal-to-Noise Ratio (Note 2)
V1.23V
µA500I
V0.8V V2.4V
pF10C
2 _______________________________________________________________________________________
CMOS, µP-Compatible, 5µs/10µs, 8-Bit ADCs
BUSY
ELECTRICAL CHARACTERISTICS (continued)
(VDD= +5V; V
= T
T
to T
A
MIN
CLOCK
Input Low Voltage Input High Voltage
Input Low Current
Input High Current
LOGIC OUTPUTS (D0–D7,
Output Low Voltage Output High Voltage
Floating State Leakage Current
Floating State Output Capacitance (Note 2)
CONVERSION TIME (Note 3)
Conversion Time with External Clock
Conversion Time with Internal Clock
POWER REQUIREMENTS (Note 4)
Supply Voltage Supply Current
Note 1: Offset Error is measured with respect to an ideal first-code transition that occurs at 1/2LSB. Note 2: Sample tested at +25°C to ensure compliance. Note 3: Accuracy may degrade at conversion times other than those specified. Note 4: Power-supply current is measured when MX7575/MX7576 are inactive, i.e.:
For MX7575 CS = RD = BUSY = high; For MX7576 CS = RD = BUSY = MODE = high.
= 1.23V; AGND = DGND = 0V; f
REF
, unless otherwise noted.)
MAX
INL
INH
I
INL
I
INH
)
OL OH
DD
I
DD
= 4MHz external for MX7575; f
CLK
CONDITIONS
VIN= 0V
VIN= V
DD
I
= 1.6mA
SINK
I
= 40µA
SOURCE
V
= 0V to VDD, D0–D7
OUT
MX757_J/A/K/B MX757_S/T MX757_J/A/K/B MX757_S/T
TA= +25°C TA= T
D0–D7
MX7575: f MX7576: f
CLK CLK
= 4MHz = 2MHz
Using recommended clock components:
= 100k,
R
CLK
= 100pF;
C
CLK
= +25°C
T
A
±5% for specified performance MX757_J/A/K/B MX757_S/T
4.75V < VDD< 5.25V LSB±1/4Power-Supply Rejection
MIN
MX7575
MX7576
to T
CLK
MAX
= 2MHz external for MX7576;
UNITSMIN TYP MAXSYMBOLPARAMETER
V0.8V
V2.4V 700 800 700 800
µA
µA
V0.4V
V4.0V
±1
±10
µA
pF10
5
10
µs
515
µs
10 30
V5V
36
mA
7
mW15Power Dissipation
MX7575/MX7576
_______________________________________________________________________________________ 3
CMOS, µP-Compatible, 5µs/10µs, 8-Bit ADCs
TIMING CHARACTERISTICS (Note 5)
(VDD= +5V, V
CS to RD Setup Time RD to BUSY Propagation Time Data-Access Time after RD RD Pulse Width CS to RD Hold Time
Data-Access Time after BUSY Data-Hold Time t
MX7575/MX7576
BUSY to CS Delay
Note 5: Timing specifications are sample tested at +25°C to ensure compliance. All input control signals are specified with Note 6: t3and t6are measured with the load circuits of Figure 1 and defined as the time required for an output to cross 0.8V or 2.4V.
Note 7: t
______________________________________________________________Pin Description
= 1.23V, AGND = DGND = 0V.)
REF
TA= +25°C TA= T
PARAMETER SYMBOL CONDITIONS
t
1
t
2
t
(Note 6) 100 100 120 ns
3
t
4
t
5
t
(Note 6) 80 80 100 ns
6
(Note 7) 10 80 10 80 10 100 ns
7
t
8
t
= tf= 20ns (10% to 90% of +5V) and timed from a voltage level of 1.6V.
r
is defined as the time required for the data lines to change 0.5V when loaded with the circuits of Figure 2.
7
ALL J/K/A/B S/T
MIN MAX MIN MAX MIN MAX
0 0 0 ns
100 100 120 ns
100 100 120 ns
0 0 0 ns
0 0 0 ns
MIN
to T
MAX
UNITS
PIN
DIP/SO
10–13 D4–D1 Three-State Data Outputs, bits 4–1
4 _______________________________________________________________________________________
PLCC
1 2
3
4 5 CLK External Clock Input/Internal Oscillator Pin for frequency setting RC components.
6 D7 Three-State Data Output, bit 7 (MSB)
7, 8 D6, D5 Three-State Data Outputs, bits 6 and 5
9 DGND Digital Ground
12–15 14 D0 Three-State Data Output, bit 0 (LSB) 15 AGND Analog Ground 16 AIN Analog Input. 0V to 2V 17 REF Reference Input. +1.23V nominal. 18 V — N.C. No Connect
1, 11
NAME FUNCTION
2 3
4
5 6
7
8, 9
10
16 17
19 20
CS Chip Select Input. CS must be low for the device to be selected or to recognize the RD input.
Read Input. RD must be low to access data. RD is also used to start conversions. See the
RD
TP
(MX7575)
MODE
(MX7576)
BUSY
DD
Microprocessor Interface
Test Point. Connect to VDD. Mode Input. MODE = low puts the ADC into its asynchronous conversion mode. MODE has to be
tied high for the synchronous conversion mode and the ROM interface mode. BUSY Output. BUSY going low indicates the start of a conversion. BUSY going high indicates the
end of a conversion.
Power-Supply Voltage. +5V nominal.
REF
section.
input range.18
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