MX7575/MX7576
CMOS, µP-Compatible, 5µs/10µs, 8-Bit ADCs
2 _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(VDD= +5V; V
REF
= 1.23V; AGND = DGND = 0V; f
CLK
= 4MHz external for MX7575; f
CLK
= 2MHz external for MX7576;
T
A
= T
MIN
to T
MAX
, unless otherwise noted.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
VDDto AGND...............................................................-0.3V, +7V
V
DD
to DGND ..............................................................-0.3V, +7V
AGND to DGND...............................................-0.3V, V
DD
+ 0.3V
Digital Input Voltage to DGND
(CS, RD, TP, MODE)......................................-0.3V, V
DD
+ 0.3V
Digital Output Voltage to DGND
(BUSY, D0–D7)..............................................-0.3V, V
DD
+ 0.3V
CLK Input Voltage to DGND............................-0.3V, V
DD
+ 0.3V
REF to AGND...................................................-0.3V, V
DD
+ 0.3V
AIN to AGND....................................................-0.3V, V
DD
+ 0.3V
Continuous Power Dissipation (T
A
= +70°C)
Plastic DIP (derate 11.11mW/°C above +70°C)...............889mW
Wide SO (derate 9.52mW/°C above +70°C)..................762mW
CERDIP (derate 10.53mW/°C above +70°C).................842mW
PLCC (derate 10.00mW/°C above +70°C) ....................800mW
Operating Temperature Ranges
MX757_J/K............................................................0°C to +70°C
MX757_A/B........................................................-25°C to +85°C
MX757_JE/KE ....................................................-40°C to +85°C
MX757_S/T.......................................................-55°C to +125°C
Storage Temperature Range.............................-65°C to +160°C
Lead Temperature (soldering,10sec)..............................+300°C
V
IN
= 0V or V
DD
±10
I
IN
Input Current µA
±1
V2.4V
INH
Input High Voltage
V0.8V
INL
Input Low Voltage
µA500I
REF
Reference Current
V1.23V
REF
Reference Voltage
dB45SNRSignal-to-Noise Ratio (Note 2)
V/µs0.386Slew Rate, Tracking
MΩ10DC Input Impedance
V02V
REF
Voltage Range
±1
Bits8Resolution
ppm/°C±5Offset Tempco
LSB±1/2Offset Error (Note 1)
ppm/°C±5Full-Scale Tempco
LSB±1Full-Scale Error
LSB
±2
TUETotal Unadjusted Error
±1/2
LSB
±1
INLRelative Accuracy
Bits8No-Missing-Codes Resolution
UNITSMIN TYP MAXSYMBOLPARAMETER
TA= T
MIN
to T
MAX
TA= +25°C
MX757_K/B/T
±5% variation for specified performance
MX7575, VIN= 2.46V
p-p
at 10kHz, Figure 13
MX7575
MX757_J/A/S
MX757_K/B/T
MX757_J/A/S
1LSB = 2V
REF
/256
CONDITIONS
pF10C
IN
Input Capacitance (Note 2)
ACCURACY
ANALOG INPUT
REFERENCE INPUT
LOGIC INPUTS CS, RD, MODE