General Description
The MAX9995 dual, high-linearity, downconversion
mixer provides 6.1dB gain, +25.6dBm IIP3, and 9.8dB
NF for WCDMA, TD-SCDMA, LTE, TD-LTE, and
GSM/EDGE base-station applications.
This device integrates baluns in the RF and LO ports, a
dual-input LO selectable switch, an LO buffer, two doublebalanced mixers, and a pair of differential IF output amplifiers. The MAX9995 requires a typical LO drive of 0dBm
and supply current is guaranteed to be below 380mA.
These devices are available in a compact 36-pin TQFN
package (6mm × 6mm) with an exposed pad. Electrical
performance is guaranteed over the extended temperature range, from T
C
= -40°C to +85°C.
Applications
Features
o 1700MHz to 2700MHz RF Frequency Range
o 1400MHz to 2600MHz LO Frequency Range
o 40MHz to 350MHz IF Frequency Range
o 6.1dB Conversion Gain
o +25.6dBm Input IP3
o 9.8dB Noise Figure
o 66dBc 2RF - 2LO Spurious Rejection at
P
RF
= -10dBm
o Dual Channels Ideal for Diversity Receiver
Applications
o Integrated LO Buffer
o Integrated RF and LO Baluns for Single-Ended
Inputs
o Low -3dBm to +3dBm LO Drive
o Built-In SPDT LO Switch with 50dB LO1 - LO2
Isolation and 50ns Switching Time
o 44dB Channel-to-Channel Isolation
MAX9995
Dual, SiGe, High-Linearity, 1700MHz to 2700MHz
Downconversion Mixer with LO Buffer/Switch
________________________________________________________________
Maxim Integrated Products
1
19-3383; Rev 1; 3/11
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.
EVALUATION KIT
AVAILABLE
cdma2000 is a registered trademark of Telecommunications
Industry Association.
Ordering Information
+Denotes a lead(PB)-free and RoHS-compliant package.
*
TC= Case temperature.
**
EP = Exposed pad.
T = Tape and reel.
Pin Configuration/
Functional Diagram
WCDMA, TD-SCDMA,
and cdma2000
®
3G
Base Stations
LTE and TD-LTE
Base Stations
GSM/EDGE
Base Stations
PHS/PAS Base Stations
Fixed Broadband
Wireless Access
Wireless Local Loop
Private Mobile Radio
Military Systems
TOP VIEW
RFMAIN
TAPMAIN
GND
V
CC
GND
V
CC
GND
TAPDIV
RFDIV
*EXPOSED PAD ON THE BOTTOM OF THE PACKAGE
CC
IFM_SET
V
36
1
2
3
4
5
6
7
8
9
10
CC
V
GND
35
34
11
12
GND
IFD_SET
6mm x 6mm TQFN
IFM+
33
13
IFD+
IFM-
32
14
IFD-
M
IND_EXT
31
MAX9995
EXPOSED
PAD*
15
D
IND_EXT
_M
CC
LO_ADJ
29
17
LO_ADJ_D
N.C.
28
18
N.C.
27
LO2
26
GND
25
GND
24
GND
23
LOSEL
22
GND
21
V
CC
20
GND
19
LO1
V
30
16
CC
V
PART TEMP RANGE PIN-PACKAGE
MAX9995ETX+ T
* = -40°C to +85°C
C
MAX9995ETX+T TC* = -40°C to +85°C
36 TQFN-EP**
36 TQFN-EP**
MAX9995
Dual, SiGe, High-Linearity, 1700MHz to 2700MHz
Downconversion Mixer with LO Buffer/Switch
2 _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
VCC........................................................................-0.3V to +5.5V
LO1, LO2 to GND ...............................................................±0.3V
IFM_, IFD_, IFM_SET, IFD_SET, LOSEL,
LO_ADJ_M, LO_ADJ_D to GND.............-0.3V to (V
CC
+ 0.3V)
RFMAIN, RFDIV, and LO_ Input Power ..........................+20dBm
RFMAIN, RFDIV Current
(RF is DC shorted to GND through balun) ......................50mA
Continuous Power Dissipation (Note 1) ...............................8.8W
Operating Temperature Range (Note 2).....T
C
= -40°C to +85°C
Maximum Junction Temperature .....................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Soldering Temperature (reflow) .......................................+260°C
DC ELECTRICAL CHARACTERISTICS
(
Typical Application Circuit
, no input RF or LO signals applied, VCC= 4.75V to 5.25V, TC= -40°C to +85°C. Typical values are at V
CC
= 5.0V, TC= +25°C, unless otherwise noted.)
Note 1: Based on junction temperature TJ= TC+ (θJCx VCCx ICC). This formula can be used when the temperature of the exposed
pad is known while the device is soldered down to a PCB. See the
Applications Information
section for details. The junction
temperature must not exceed +150°C.
Note 2: T
C
is the temperature on the exposed pad of the package. TAis the ambient temperature of the device and PCB.
TQFN
Junction-to-Ambient Thermal Resistance (θ
JA
)
(Note 3, 4) ....................................................................38°C/W
Junction-to-Case Thermal Resistance (θJC)
(Note 1, 4) ...................................................................7.4°C/W
PACKAGE THERMAL CHARACTERISTICS
Note 3: Junction temperature TJ= TA+ (θ
J
A
x VCCx ICC). This formula can be used when the ambient temperature of the PCB is
known. The junction temperature must not exceed +150°C.
Note 4: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial
.
RECOMMENDED AC OPERATING CONDITIONS
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Supply Voltage V
Supply Current I
LOSEL Input High Voltage V
LOSEL Input Low Voltage V
LOSEL Input Current IIL and I
CC
Total supply current 332 380
VCC (pin 16) 82 90
CC
VCC (pin 30) 97 110
IFM+/IFM- (total of both) 70 90
IFD+/IFD- (total of both) 70 90
IH
IL
IH
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
RF Frequency Range f
LO Frequency Range f
IF Frequency Range f
LO Drive Level P
RF
LO
(Note 5) 1700 2700 MHz
(Note 5) 1400 2600 MHz
(Note 5) 40 350 MHz
IF
(Note 5) -3 +3 dBm
LO
4.75 5 5.25 V
mA
2V
0.8 V
-10 +10 µA
MAX9995
Dual, SiGe, High-Linearity, 1700MHz to 2700MHz
Downconversion Mixer with LO Buffer/Switch
_______________________________________________________________________________________ 3
AC ELECTRICAL CHARACTERISTICS—fRF= 1700MHz TO 2200MHz
(
Typical Application Circuit,
VCC= 4.75V to 5.25V, RF and LO ports are driven from 50Ω sources, PLO= -3dBm to +3dBm, fRF=
1700MHz to 2200MHz, f
LO
= 1400MHz to 2000MHz, fIF= 200MHz, with fRF> fLO, TC= -40°C to +85°C. Typical values are at VCC=
5.0V, P
LO
= 0dBm, fRF= 1900MHz, fLO= 1700MHz, fIF= 200MHz, and TC= +25°C, unless otherwise noted.) (Notes 6, 7)
Conversion Gain G
Gain Variation from Nominal
Gain Variation with Temperature ±0.75 dB
Noise Figure NF
Noise Figure (with Blocker)
Input 1dB Compression Point P
Input Third-Order Intercept Point IIP3 (Notes 8, 9) 23 25.6 dBm
2RF - 2LO Spur Rejection 2 x 2
3RF - 3LO Spur Rejection 3 x 3
Maximum LO Leakage at RF Port fLO = 1400MHz to 2000MHz -29 dBm
M axi m um 2LO Leakag e at RF P or tf
Maximum LO Leakage at IF Port fLO = 1400MHz to 2000MHz -25 dBm
Minimum RF-to-IF Isolation fRF = 1700MHz to 2200MHz, fIF = 200MHz 37 dB
LO1 - LO2 Isolation P
Minimum Channel-to-Channel
Isolation
LO Switching Time 50% of LOSEL to IF settled to within 2° 50 ns
RF Return Loss 14 dB
LO Return Loss
IF Return Loss
PARAMETER SYMBOL CONDITIONS MIN TYP MAX
fRF = 1710MHz to 1875MHz 6
fRF = 1850MHz to 1910MHz 6.2
fRF = 2110MHz to 2170MHz 6.1
fRF = 1710MHz to 1875MHz ±0.5 ±1
fRF = 1850MHz to 1910MHz ±0.5 ±1
= 2110MHz to 2170MHz ±0.5 ±1
f
RF
fRF = 1710MHz to 1875MHz 9.7
fRF = 1850MHz to 1910MHz 9.8
f
= 2110MHz to 2170MHz 9.9
RF
LO
PRF = -10dBm 66
P
= -5dBm 61
RF
PRF = -10dBm 70 88
P
= -5dBm 60 78
RF
= 0dBm (Note 10) 40 50.5 dB
LO2
40 44 dB
22 dB
21 dB
1dB
C
= 5.0V,
V
CC
= +25°C,
T
C
P
= 0dBm,
LO
= -10dBm
P
RF
(Note 8)
No blockers
present
8dBm blocker tone applied to RF port at
2000MHz, fRF = 1900MHz, fLO = 1710MHz, P
= -3dBm
(Note 8) 9.5 12.6 dBm
f
= 1900MHz,
RF
f
= 1700MHz,
LO
= 1800MHz (Note 8)
f
SPUR
f
= 1900MHz,
RF
f
= 1700MHz,
LO
= 1766.7MHz (Note 8)
f
SPUR
= 1400MHz to 2000MHz -17 dBm
LO
= 0dBm, P
LO1
= -10dBm, RFMAIN (RFDIV)
P
RF
power measured at IFDIV (IFMAIN),
relative to IFMAIN (IFDIV),
all unused ports terminated at 50Ω
LO port selected 18
LO port unselected 21
LO driven at 0dBm, RF terminated into 50Ω
(Note 11)
UNIT
dB
dB
dB
dBc
dBc
dB
Typical Operating Characteristics
(
Typical Application Circuit
, VCC= 5.0V, PRF= -5dBm, PLO= 0dBm, LO is low-side injected for a 200MHz IF, TC= +25°C.)
MAX9995
Dual, SiGe, High-Linearity, 1700MHz to 2700MHz
Downconversion Mixer with LO Buffer/Switch
4 _______________________________________________________________________________________
Note 5: Operation outside this frequency band is possible but has not been characterized. See the
Typical Operating Characteristics
.
Note 6: Guaranteed by design and characterization.
Note 7: All limits reflect losses of external components. Output measurements taken at IF outputs of
Typical Application Circuit
.
Note 8: Production tested.
Note 9: Two tones 3MHz spacing, -5dBm per tone at RF port.
Note 10: Measured at IF port at IF frequency. f
LO1
and f
LO2
are offset by 1MHz.
Note 11: IF return loss can be optimized by external matching components.
AC ELECTRICAL CHARACTERISTICS—fRF= 2540MHz
(
Typical Application Circuit
, RF and LO ports are driven from 50Ω sources, fRF> fLO, VCC= 5.0V, PRF= -5dBm, PLO= 0dBm, fRF=
2540MHz, f
LO
= 2400MHz, fIF= 140MHz, TC= +25°C, unless otherwise noted.) (Note 7)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Conversion Gain G
Input Third-Order Intercept Point IIP3
2RF - 2LO Spurious Response 2 x 2
3RF - 3LO Spurious Response 3 x 3
LO Leakage at IF Port -45 dBm
RF-to-IF Isolation 49 dB
Channel-to-Channel Isolation
C
Two tones: f
= -5dBm/tone
P
RF
= 2540MHz, f
RF1
= 2541MHz,
RF2
5.2 dB
24.6 dBm
PRF = -10dBm 58
P
= -5dBm 63
RF
PRF = -10dBm 72
= -5dBm 82
P
RF
= -10dBm, RFMAIN (RFDIV) power
P
RF
measured at IFDIV (IFMAIN), relative to IFMAIN
48 dB
(IFDIV), all unused ports terminated at 50Ω
dBc
dBc
CONVERSION GAIN vs. RF FREQUENCY
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
CONVERSION GAIN (dB)
4.0
3.5
3.0
1700 2200
TC = -20°C
TC = +85°C
RF FREQUENCY (MHz)
CONVERSION GAIN vs. RF FREQUENCY
6.5
6.4
MAX9995 toc02
6.3
6.2
6.1
6.0
5.9
5.8
CONVERSION GAIN (dB)
5.7
5.6
5.5
1700 2200
TC = +25°C
2100200019001800
6.5
6.4
MAX9995 toc01
6.3
6.2
6.1
6.0
5.9
5.8
CONVERSION GAIN (dB)
5.7
5.6
5.5
PLO = -3dBm to +3dBm
1700 2200
RF FREQUENCY (MHz)
2100200019001800
CONVERSION GAIN vs. RF FREQUENCY
VCC = 4.75V
VCC = 5.0V
VCC = 5.25V
2100200019001800
RF FREQUENCY (MHz)
MAX9995 toc03
MAX9995
Dual, SiGe, High-Linearity, 1700MHz to 2700MHz
Downconversion Mixer with LO Buffer/Switch
_______________________________________________________________________________________
5
Typical Operating Characteristics (continued)
(
Typical Application Circuit
, VCC= 5.0V, PRF= -5dBm, PLO= 0dBm, LO is low-side injected for a 200MHz IF, TC= +25°C.)
INPUT IP3 vs. RF FREQUENCY
26.8
26.4
26.0
25.6
IIP3 (dBm)
25.2
24.8
24.4
TC = +85°C
TC = -20°C
RF FREQUENCY (MHz)
2RF - 2LO vs. FUNDAMENTAL FREQUENCY
75
PRF = -5dBm
70
65
60
55
50
2RF - 2LO (dBc)
45
40
35
30
TC = -20°C
FUNDAMENTAL FREQUENCY (MHz)
TC = +25°C
TC = +25°C
TC = +85°C
21002000190018001700 2200
21002000190018001700 2200
MAX9995 toc04
MAX9995 toc07
26.6
26.4
26.2
26.0
IIP3 (dBm)
25.8
25.6
25.4
25.2
PLO = 0dBm
PLO = +3dBm
PLO = -3dBm
RF FREQUENCY (MHz)
2RF - 2LO vs. FUNDAMENTAL FREQUENCY
66
INPUT IP3 vs. RF FREQUENCY
PRF = -5dBm
64
62
60
58
2RF - 2LO (dBc)
56
54
52
50
PLO = 0dBm
FUNDAMENTAL FREQUENCY (MHz)
PLO = -3dBm
PLO = +3dBm
21002000190018001700 2200
21002000190018001700 2200
MAX9995 toc05
MAX9995 toc08
27.0
26.6
26.2
25.8
IIP3 (dBm)
25.4
25.0
24.6
2RF - 2LO (dBc)
INPUT IP3 vs. RF FREQUENCY
VCC = 5.25V
VCC = 4.75V
RF FREQUENCY (MHz)
VCC = 5.0V
2RF - 2LO vs. FUNDAMENTAL FREQUENCY
66
PRF = -5dBm
64
62
60
58
56
54
52
50
VCC = 5.25V
FUNDAMENTAL FREQUENCY (MHz)
VCC = 4.75V
VCC = 5.0V
MAX9995 toc06
21002000190018001700 2200
MAX9995 toc09
21002000190018001700 2200
3RF - 3LO vs. FUNDAMENTAL FREQUENCY
90
PRF = -5dBm
88
86
TC = +25°C
84
82
80
78
3RF - 3LO (dBc)
76
74
72
70
FUNDAMENTAL FREQUENCY (MHz)
TC = -20°C
TC = +85°C
21002000190018001700 2200
MAX9995 toc10
3RF - 3LO vs. FUNDAMENTAL FREQUENCY
88
PRF = -5dBm
86
84
82
80
3RF - 3LO (dBc)
78
76
74
72
PLO = -3dBm
FUNDAMENTAL FREQUENCY (MHz)
PLO = 0dBm
PLO = +3dBm
21002000190018001700 2200
MAX9995 toc11
3RF - 3LO vs. FUNDAMENTAL FREQUENCY
88
PRF = -5dBm
86
84
82
80
3RF - 3LO (dBc)
78
76
74
72
VCC = 5.0V
VCC = 5.25V
VCC = 4.75V
FUNDAMENTAL FREQUENCY (MHz)
MAX9995 toc12
21002000190018001700 2200
MAX9995
Dual, SiGe, High-Linearity, 1700MHz to 2700MHz
Downconversion Mixer with LO Buffer/Switch
6 _______________________________________________________________________________________
Typical Operating Characteristics (continued)
(
Typical Application Circuit
, VCC= 5.0V, PRF= -5dBm, PLO= 0dBm, LO is low-side injected for a 200MHz IF, TC= +25°C.)
INPUT P
14.4
14.0
1dB
TC = +25°C
13.6
(dBm)
1dB
13.2
INPUT P
12.8
TC = -20°C
12.4
RF FREQUENCY (MHz)
LO SWITCH ISOLATION vs. LO FREQUENCY
55
54
53
52
51
50
49
TC = +25°C
48
LO SWITCH ISOLATION (dB)
47
46
45
1400 2000
LO FREQUENCY (MHz)
vs. RF FREQUENCY
TC = +85°C
21002000190018001700 2200
TC = -20°C
TC = +85°C
INPUT P
MAX9995 toc13
13.8
13.7
13.6
13.5
(dBm)
13.4
1dB
13.3
INPUT P
13.2
13.1
13.0
12.9
PLO = 0dBm
LO SWITCH ISOLATION vs. LO FREQUENCY
54
MAX9995 toc16
19001800170016001500
53
52
51
PLO = +3dBm
50
49
LO SWITCH ISOLATION (dB)
48
47
vs. RF FREQUENCY
1dB
PLO = -3dBm
PLO = +3dBm
RF FREQUENCY (MHz)
PLO = -3dBm
PLO = 0dBm
LO FREQUENCY (MHz)
21002000190018001700 2200
190018001700160015001400 2000
14.4
14.2
MAX9995 toc14
14.0
13.8
13.6
(dBm)
1dB
13.4
13.2
INPUT P
13.0
12.8
12.6
12.4
LO SWITCH ISOLATION vs. LO FREQUENCY
54
53
MAX9995 toc17
52
51
50
49
LO SWITCH ISOLATION (dB)
48
47
INPUT P
VCC = 4.75V
vs. RF FREQUENCY
1dB
VCC = 5.25V
RF FREQUENCY (MHz)
VCC = 4.75V TO 5.25V
LO FREQUENCY (MHz)
MAX9995 toc15
VCC = 5.0V
21002000190018001700 2200
MAX9995 toc18
190018001700160015001400 2000
CHANNEL ISOLATION vs. RF FREQUENCY
80
TC = +85°C
70
60
50
40
CHANNEL ISOLATION (dB)
30
20
RF FREQUENCY (MHz)
TC = -20°C
TC = +25°C
21002000190018001700 2200
90
MAX9995 toc19
80
70
60
50
CHANNEL ISOLATION (dB)
40
30
CHANNEL ISOLATION vs. RF FREQUENCY
PLO = +3dBm
PLO = -3dBm
RF FREQUENCY (MHz)
PLO = 0dBm
21002000190018001700 2200
MAX9995 toc20
CHANNEL ISOLATION vs. RF FREQUENCY
90
80
VCC = 4.75V
70
60
50
CHANNEL ISOLATION (dB)
40
30
VCC = 5.25V
RF FREQUENCY (MHz)
VCC = 5.0V
21002000190018001700 2200
MAX9995 toc21
MAX9995
Dual, SiGe, High-Linearity, 1700MHz to 2700MHz
Downconversion Mixer with LO Buffer/Switch
_______________________________________________________________________________________
7
Y
Typical Operating Characteristics (continued)
(
Typical Application Circuit
, VCC= 5.0V, PRF= -5dBm, PLO= 0dBm, LO is low-side injected for a 200MHz IF, TC= +25°C.)
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
-20
-25
-30
-35
-40
-45
TC = +85°C
-50
LO LEAKAGE AT IF PORT (dBm)
-55
-60
TC = -20°C
TC = +25°C
1800 19001700160015001400 2000
LO FREQUENCY (MHz)
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
-20
-25
-30
-35
-40
-45
LO LEAKAGE AT RF PORT (dBm)
-50
-55
TC = +25°C
TC = -20°C
TC = +85°C
1800 1900
1700160015001400
LO FREQUENCY (MHz)
2000
LO LEAKAGE AT IF PORT vs. LO FREQUENC
-25
-30
MAX9995 toc22
-35
-40
-45
LO LEAKAGE AT IF PORT (dBm)
-50
-55
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
-20
-25
MAX9995 toc25
-30
-35
-40
LO LEAKAGE AT RF PORT (dBm)
-45
-50
PLO = +3dBm
LO FREQUENCY (MHz)
PLO = -3dBm
LO FREQUENCY (MHz)
PLO = -3dBm
PLO = +3dBm
PLO = 0dBm
1800 19001700160015001400 2000
PLO = 0dBm
1800 19001700160015001400 2000
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
-25
MAX9995 toc23
-30
-35
-40
LO LEAKAGE AT IF PORT (dBm)
-45
-50
VCC = 5.25V
VCC = 4.75V
VCC = 5.0V
LO FREQUENCY (MHz)
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
-20
VCC = 4.75V TO 5.25V
-25
MAX9995 toc26
-30
-35
-40
-45
-50
LO LEAKAGE AT RF PORT (dBm)
-55
-60
LO FREQUENCY (MHz)
MAX9995 toc24
1800 19001700160015001400 2000
MAX9995 toc27
1800 19001700160015001400 2000
RF-TO-IF ISOLATION vs. RF FREQUENCY
45
44
43
42
41
40
RF-TO-IF ISOLATION (dB)
39
38
RF FREQUENCY (MHz)
TC = +25°C
TC = +85°C
TC = -20°C
21002000190018001700 2200
46
45
MAX9995 toc28
44
43
42
41
40
39
RF-TO-IF ISOLATION (dB)
38
37
36
RF-TO-IF ISOLATION vs. RF FREQUENCY
PLO = -3dBm TO +3dBm
21002000190018001700 2200
RF FREQUENCY (MHz)
RF-TO-IF ISOLATION vs. RF FREQUENCY
43.0
42.5
MAX9995 toc29
42.0
41.5
41.0
40.5
RF-TO-IF ISOLATION (dB)
40.0
39.5
VCC = 5.25V
VCC = 4.75V
RF FREQUENCY (MHz)
MAX9995 toc30
VCC = 5.0V
21002000190018001700 2200
MAX9995
Dual, SiGe, High-Linearity, 1700MHz to 2700MHz
Downconversion Mixer with LO Buffer/Switch
8 _______________________________________________________________________________________
Typical Operating Characteristics (continued)
(
Typical Application Circuit
, VCC= 5.0V, PRF= -5dBm, PLO= 0dBm, LO is low-side injected for a 200MHz IF, TC= +25°C.)
NOISE FIGURE vs. RF FREQUENCY
14
13
12
TC = +85°C
11
10
9
NOISE FIGURE (dB)
8
TC = -20°C
7
6
1700 2200
RF FREQUENCY (MHz)
RF RETURN LOSS vs. RF FREQUENCY
0
5
10
15
20
RF RETURN LOSS (dB)
25
30
PLO = -3dBm TO +3dBm
RF FREQUENCY (MHz)
TC = +25°C
210020001800 1900
210020001800 19001700 2200
MAX9995 toc31
NOISE FIGURE (dB)
MAX9995 toc34
IF RETURN LOSS (dB)
NOISE FIGURE vs. RF FREQUENCY
10.2
10.1
10.0
PLO = -3dBm
PLO = 0dBm
9.9
9.8
9.7
9.6
PLO = +3dBm
RF FREQUENCY (MHz)
IF RETURN LOSS vs. IF FREQUENCY
0
5
10
15
20
25
30
35
40
45
40 360
IF FREQUENCY (MHz)
210020001800 19001700 2200
320280200 240120 16080
10.5
10.4
MAX9995 toc32
10.3
10.2
10.1
10.0
9.9
NOISE FIGURE (dB)
9.8
9.7
9.6
9.5
MAX9995 toc35
10
15
LO RETURN LOSS (dB)
20
25
NOISE FIGURE vs. RF FREQUENCY
VCC = 5.25V
VCC = 5.0V
VCC = 4.75V
210020001800 19001700 2200
RF FREQUENCY (MHz)
LO RETURN LOSS vs. LO FREQUENCY
(LO INPUT SELECTED)
0
5
PLO = +3dBm
PLO = -3dBm
1400 2000
LO FREQUENCY (MHz)
PLO = 0dBm
19001800170016001500
MAX9995 toc33
MAX9995 toc36
LO RETURN LOSS vs. LO FREQUENCY
0
5
10
15
20
LO RETURN LOSS (dB)
25
30
35
1400 2000
PLO = -3dBm TO +3dBm
LO FREQUENCY (MHz)
(LO INPUT UN SELECTED)
MAX9995 toc37
19001800170016001500
SUPPLY CURRENT vs. TEMPERATURE (TC)
365
360
355
350
345
340
335
330
SUPPLY CURRENT (mA)
325
320
315
310
-20-5102540557085
VCC = 5.25V
VCC = 5.0V
VCC = 4.75V
TEMPERATURE (°C)
MAX9995 toc38
MAX9995
Dual, SiGe, High-Linearity, 1700MHz to 2700MHz
Downconversion Mixer with LO Buffer/Switch
_______________________________________________________________________________________ 9
Pin Description
PIN NAME FUNCTION
1 RFMAIN Main Channel RF Input. Internally matched to 50Ω. Requires an input DC-blocking capacitor.
2 TAPMAIN Main Channel Balun Center Tap. Connect a 0.033µF capacitor from this pin to the board ground.
3, 5, 7, 12, 20, 22,
24, 25, 26, 34
4, 6, 10, 16, 21, 30,
36
8 TAPDIV Diversity Channel Balun Center Tap. Connect a 0.033µF capacitor from this pin to the ground.
9 RFDIV Diversity Channel RF Input. Internally matched to 50Ω. Requires an input DC-blocking capacitor.
11 IFD_SET
13, 14 IFD+, IFD-
15 IND_EXTD Connect a 10nH inductor from this pin to ground to increase the RF-IF and LO-IF isolation.
17 LO_ADJ_D
18, 28 N.C. No Connection. Not internally connected.
19 LO1
23 LOSEL Local Oscillator Select. Set this pin to high to select LO1. Set to low to select LO2.
27 LO2
29 LO_ADJ_M
31 IND_EXTM Connect a 10nH inductor from this pin to ground to increase the RF-IF and LO-IF isolation.
32, 33 IFM-, IFM+
35 IFM_SET
—EP
GND Ground
V
CC
Power Supply. Connect bypass capacitors as close as possible to the pin (see the Typical
Application Circuit).
IF Diversity Amplifier Bias Control. Connect a 1.2kΩ resistor from this pin to ground to set the
bias current for the diversity IF amplifier.
Diversity Mixer Differential IF Output. Connect pullup inductors from each of these pins to V
(see the Typical Application Circuit).
LO Diversity Amplifier Bias Control. Connect a 392Ω resistor from this pin to ground to set the
bias current for the diversity LO amplifier.
Local Oscillator 1 Input. This input is internally matched to 50Ω. Requires an input DC-blocking
capacitor.
Local Oscillator 2 Input. This input is internally matched to 50Ω. Requires an input DC-blocking
capacitor.
LO Main Amplifier Bias Control. Connect a 392Ω resistor from this pin to ground to set the bias
current for the main LO amplifier.
Main Mixer Differential IF Output. Connect pullup inductors from each of these pins to V
(see the Typical Application Circuit).
IF Main Amplifier Bias Control. Connect a 1.2kΩ resistor from this pin to ground to set the bias
current for the main IF amplifier.
Exposed Pad. Internally connected to GND. Solder this exposed pad to a PCB pad that uses
multiple ground vias to provide heat transfer out of the device into the PCB ground planes. These
multiple via grounds are also required to achieve the noted RF performance.
CC
CC
MAX9995
Dual, SiGe, High-Linearity, 1700MHz to 2700MHz
Downconversion Mixer with LO Buffer/Switch
10 ______________________________________________________________________________________
Detailed Description
The MAX9995 dual, high-linearity, downconversion
mixer provides 6.1dB gain and +25.6dBm IIP3, with a
9.8dB noise figure. Integrated baluns and matching circuitry allow 50Ω single-ended interfaces to the RF and
LO ports. A single-pole, double-throw (SPDT) LO
switch provides 50ns switching time between LO
inputs, with 50dB LO-to-LO isolation. Furthermore, the
integrated LO buffer provides a high drive level to the
mixer core, reducing the LO drive required at the
MAX9995’s inputs to -3dBm. The IF port incorporates a
differential output, which is ideal for providing
enhanced 2RF - 2LO performance.
Specifications are guaranteed over broad frequency
ranges to allow for use in WCDMA, TD-SCDMA, LTE,
TD-LTE, and GSM/EDGE base stations. The MAX9995
is specified to operate over an RF input range of
1700MHz to 2700MHz, an LO range of 1400MHz to
2600MHz, and an IF range of 40MHz to 350MHz.
Operation beyond this is possible; however, performance is not characterized. This device is available in
a compact 6mm x 6mm, 36-pin TQFN package with an
exposed pad.
RF Input and Balun
The MAX9995’s two RF inputs (RFMAIN and RFDIV) are
internally matched to 50Ω, requiring no external matching components. DC-blocking capacitors are required
as the inputs are internally DC shorted to ground
through the on-chip baluns. Input return loss is typically
14dB over the entire RF frequency range of 1700MHz
to 2700MHz.
LO Input, Switch, Buffer, and Balun
The mixers can be used for either high-side or low-side
injection applications with an LO frequency range of
1400MHz to 2600MHz. As an added feature, the
MAX9995 includes an internal LO SPDT switch that can
be used for frequency-hopping applications. The
switch selects one of the two single-ended LO ports,
allowing the external oscillator to settle on a particular
frequency before it is switched in. LO switching time is
typically less than 50ns, which is more than adequate
for virtually all GSM applications. If frequency hopping
is not employed, set the switch to either of the LO
inputs. The switch is controlled by a digital input
(LOSEL): logic-high selects LO1, and logic-low selects
LO2. LO1 and LO2 inputs are internally matched to
50Ω, requiring only a 22pF DC-blocking capacitor.
A two-stage internal LO buffer allows a wide input
power range for the LO drive. All guaranteed specifications are for an LO signal power from -3dBm to +3dBm.
The on-chip low-loss balun, along with an LO buffer,
drives the double-balanced mixer. All interfacing and
matching components from the LO inputs to the IF outputs are integrated on-chip.
High-Linearity Mixers
The core of the MAX9995 is a pair of double-balanced,
high-performance passive mixers. Exceptional linearity
is provided by the large LO swing from the on-chip LO
buffer. When combined with the integrated IF amplifiers, the cascaded IIP3, 2RF - 2LO rejection, and NF
performance is typically +25.6dBm, 66dBc, and 9.8dB,
respectively.
Differential IF Output Amplifiers
The MAX9995 mixers have an IF frequency range of
40MHz to 350MHz. The differential, open-collector IF
output ports require external pullup inductors to VCC.
Note that these differential outputs are ideal for providing enhanced 2RF - 2LO rejection performance. Singleended IF applications require a 4:1 balun to transform
the 200Ω differential output impedance to a 50Ω singleended output. After the balun, VSWR is typically 1.5:1.
Applications Information
Input and Output Matching
The RF and LO inputs are internally matched to 50Ω.
No matching components are required. Return loss at
each RF port is typically 14dB over the entire input
range (1700MHz to 2700MHz), and return loss at the
LO ports is typically 18dB (1400MHz to 2000MHz). RF
and LO inputs require only DC-blocking capacitors for
interfacing.
The IF output impedance is 200Ω (differential). For
evaluation, an external low-loss 4:1 (impedance ratio)
balun transforms this impedance down to a 50Ω singleended output (see the
Typical Application Circuit
).
Bias Resistors
Bias currents for the LO buffer and the IF amplifier are
optimized by fine tuning the resistors (R1, R2, R4, and
R5). If reduced current is required at the expense of performance, contact the factory. If the ±1% bias resistor
values are not readily available, substitute standard ±5%
values.
MAX9995
Dual, SiGe, High-Linearity, 1700MHz to 2700MHz
Downconversion Mixer with LO Buffer/Switch
______________________________________________________________________________________ 11
INDEXTM and INDEXTD Inductors
Short INDEXTM and INDEXTD to ground using 0Ω
resistors. For applications requiring improved RF-to-IF
and LO-to-IF isolation, use 10nH inductors (L3 and L6)
in place of the 0Ω resistors. However, to ensure stable
operation, the mixer IF ports must be presented with
low common-mode load impedance. Contact the factory for details. Since approximately 100mA flows through
INDEXTM and INDEXTD, it is important to use low-DCR
wire-wound inductors.
Layout Considerations
A properly designed PCB is an essential part of any
RF/microwave circuit. Keep RF signal lines as short as
possible to reduce losses, radiation, and inductance.
For the best performance, route the ground pin traces
directly to the exposed pad under the package. The
PCB exposed pad MUST be connected to the ground
plane of the PCB. It is suggested that multiple vias be
used to connect this pad to the lower-level ground
planes. This method provides a good RF/thermal-conduction path for the device. Solder the exposed pad on
the bottom of the device package to the PCB. The
MAX9995 evaluation kit can be used as a reference for
board layout. Gerber files are available upon request at
www.maxim-ic.com.
Power-Supply Bypassing
Proper voltage-supply bypassing is essential for highfrequency circuit stability. Bypass each VCCpin with a
capacitor as close as possible to the pin (
Typical
Application Circuit
).
Exposed Pad RF/Thermal Considerations
The exposed pad (EP) of the MAX9995’s 36-pin TQFNEP package provides a low thermal-resistance path to
the die. It is important that the PCB on which the
MAX9995 is mounted be designed to conduct heat
from the EP. In addition, provide the EP with a lowinductance path to electrical ground. The EP MUST be
soldered to a ground plane on the PCB, either directly
or through an array of plated via holes.
Package Information
For the latest package outline information and land patterns
(footprints), go to www.maxim-ic.com/packages. Note that a
“+”, “#”, or “-” in the package code indicates RoHS status only.
Package drawings may show a different suffix character, but
the drawing pertains to the package regardless of RoHS status.
PACKAGE
TYPE
PACKAGE
CODE
OUTLINE
NO.
LAND
PATTERN NO.
36 TQFN-EP T3666+2
21-0141 90-0049
Chip Information
PROCESS: SiGe BiCMOS
Table 1. Component Values
COMPONENT VALUE DESCRIPTION
C1, C8 4pF Microwave capacitors (0402)
C2, C7 10pF Microwave capacitors (0402)
C3, C6 0.033µF Microwave capacitors (0603)
C4, C5, C14, C16 22pF Microwave capacitors (0402)
C9, C13, C15,
C17, C18
C10, C11, C12,
C19, C20, C21
L1, L2, L4, L5 330nH
L3, L6 10nH
R1, R4 1.21kΩ±1% resistors (0402)
R2, R5 392Ω±1% resistors (0402)
R3, R6 10Ω±1% resistors (1206)
T1, T2
0.01µF Microwave capacitors (0402)
150pF Microwave capacitors (0603)
Wire-wound high-Q inductors
(0805)
Wire-wound high-Q inductors
(0603)
4:1
(200:50)
IF baluns
MAX9995
Dual, SiGe, High-Linearity, 1700MHz to 2700MHz
Downconversion Mixer with LO Buffer/Switch
12 ______________________________________________________________________________________
Typical Application Circuit
C19
RF MAIN INPUT
V
CC
C4
RF DIV INPUT
V
CC
R1
V
CC
C18
CC
IFM_SET
V
36
C1
RFMAIN
1
TAPMAIN
C2C3
V
CC
C5
C7C6
C8
C9
GND
V
GND
V
GND
TAP DIV
RFDIV
V
2
3
CC
4
5
CC
6
7
8
9
10
CC
CC
V
IFD_SET
R4
IFM+
GND
35
34
11
12
IFD+
GND
IND_EXTM
IFM-
33
32
MAX9995
EXPOSED
13
14
IFD-
IND_EXTD
L1
V
CC
V
CC
L2
L3
30
16
C21
R2
LO_ADJ_M
29
17
LO_ADJ_D
R5
C20
N.C.
28
18
N.C.
R3
31
PAD
15
T1
4:1
V
CC
C17
LO2
27
GND
26
GND
25
GND
24
LOSEL
23
GND
22
V
CC
21
GND
20
LO1
19
V
CC
C16
V
C14
IF MAIN OUTPUT
LO2
LO SELECT
CC
C15
LO1
L6
V
CC
R6
C11
L5
C12
L4
C10
C13
T2
IF DIV OUTPUT
4:1
MAX9995
Dual, SiGe, High-Linearity, 1700MHz to 2700MHz
Downconversion Mixer with LO Buffer/Switch
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are
implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 ____________________
13
© 2011 Maxim Integrated Products Maxim is a registered trademark of Maxim Integrated Products, Inc.
Revision History
REVISION
NUMBER
0 8/04 Initial release —
1 3/11 Updated the band coverage throughout the data sheet 1–13
REVISION
DATE
DESCRIPTION
PAGES
CHANGED
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