MAXIM MAX8594 User Manual
MAIN
IN
GND
SDIG
RS
ENC2
LXL
LFB
3.3V, 500mA
SD CARD SLOT
TO IN
ENL
LCD
15V
LCD
TO MAIN
SW
ENSD
ON
OFF
ON
OFF
ON
OFF
ON
OFF
ON
OFF
3.3V, 500mA
MAIN
V
IN
REF
COR1
1V OR 1.3V
250mA
COR1
LXC
PGND
CV
1.3V
1V
ENC1
1.8V, 50mA
COR2
COR2
TO MAIN
LBO
LBI
DBO
TO MAIN
DBI
PV
ENM
SDIG
COR2
COR1
MAIN
MAX8594
19-3349; Rev 1; 11/04
__________________________________
MAX8594
电池或3节
它包含了小型便携设备所需的全部调节器、输出和电压
监视器，只需要少量外部元件。芯片内部包括三路线性
稳压器、用于
电源的高效
出和低电池电压关断功能。本器件采用高度为
型
QFN
COR1
1.3V、250mA
管，用于高效、低压差工作。主
输出。安全数字
COR2 LDO
的关断逻辑控制。如需其它输出电压组合，请与
联系。
用于
关断时具有
输入电源与电感完全断开，因此输出降至0V，而不是保
持在比输入电压低一个二极管压降。
复位输出在
µP
状态，以确保顺序启动。此外，
出稳定前不会启动。本器件还包括一个1%精度的基准和
低电池电压监视器。热关断保护用于防止芯片过热。
的电源电流。它采用微型、24引脚、
QFN
MAX8594
+85°C
__________________________________
______________________________
MAX8594ETG -40°C to +85°C
True Shutdown是Maxim Integrated Products, Inc.
本文是
翻译错误，如需确认任何词语的准确性，请参考
索取免费样品和最新版的数据资料，请访问
是完整的电源管理芯片，用于1节锂离子
电池供电的低成本个人数字助理
NiMH
LCD
4MHz
偏置的升压型
降压型
DC-DC
DC-DC
转换器、微处理器复位输
转换器、用于核
封装。
降压型
DC-DC
转换器提供可由引脚选择的1V或
输出。所有的线性稳压器都具有
提供
LDO
卡槽电源提供
(SD)
提供
偏置的升压型
LCD
True Shutdown
COR1
采用
3.1V至5.5V
封装，可耗散
的温度范围。
PDA
数字助理
蜂窝与无绳电话
MP3
播放器
1.8V、50mA
DC-DC
TM
功能，这意味着在关断期间，
输出稳定
电源供电，空载时消耗
功率。该器件工作在
1.67W
3.3V、500mA
输出。每个输出都有自己
转换器内置
典型值)后清除复位
20ms (
稳压器在
COR1
4mm x 4mm
手持设备
PART TEMP RANGE PIN-PACKAGE
________________________________________________________________ Maxim Integrated Products 1
正式英文资料的译文，
Maxim
24 Thin QFN
4mm x 4mm
(T2444-4)
的商标。
不对翻译中存在的差异或由此产生的错误负责。请注意译文中可能存在文字组织或
Maxim
路输出
5
概述
(Li+)
(PDA)
的薄
0.8mm
调整
PMOS
3.3V、500mA
输出，
Maxim
3.3V
，在
主输
MOSFET
46µA
薄型
至
-40°C
应用
定购信息
提供的英文版资料。
Maxim
的主页：
Maxim
PMIC
，提供
DC-DC
用于低成本
__________________________________
极少的外部元件
♦
。
高效降压型
♦
♦ 1V/1.3V
♦主LDO
卡输出
♦ SD
副核
♦
♦
♦
♦ 46µA
LDO
高效率的
关断时，
的静态电流
DC-DC为CPU
可选择的核电压，
输出
3.3V、500mA
3.3V、500mA
输出
1.8V、50mA
升压转换器
LCD
电源输出为0V，
LCD
核供电
250mA
__________________________
引脚配置位于资料末尾。
www.maxim-ic.com.cn
。
True Shutdown
核电源，
PDA
MAX8594
特性
典型工作电路
路输出
5
PMIC
，提供
DC-DC
核电源，
用于低成本
PDA
ABSOLUTE MAXIMUM RATINGS
IN, PV, ENSD, ENC1, ENC2, ENL, RS, SDIG,
LBI, DBI to GND ...................................................-0.3V to +6V
LXL to GND ............................................................-0.3V to +30V
MAIN, COR1, COR2, REF, LFB, CV, ENM, LBO, DBO,
LXC, SW to GND......................................-0.3V to (V
PV to IN..................................................................-0.3V to +0.3V
PGND to GND .......................................................-0.3V to +0.3V
MAX8594
Current into LXL..........................................................300mA
Current out of SW .......................................................300mA
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
+ 0.3V)
IN
RMS
RMS
Current into LXC .........................................................400mA
Output Short-Circuit Duration.....................................Continuous
Continuous Power Dissipation (T
24-Pin Thin QFN Package
(derate 20.8mW/°C above +70°C).................................1.67W
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
= +70°C)
A
ELECTRICAL CHARACTERISTICS
(VIN= VPV= V
Typical values are at T
ENSD
= V
ENC2
= +25°C.)
A
= V
ENL
= V
ENM
= V
ENC1
= V
DBI
= V
= VCV= 4.0V, TA = 0°C to +85°C, unless otherwise noted.
LBI
PARAMETER CONDITIONS MIN TYP MAX UNITS
GENERAL
IN, PV Voltage Range 3.1 5.5 V
V
= VIN, VIN falling 2.950 3.0 3.050
V
Complete Shutdown
IN
Threshold
V
Complete Shutdown
DBI
Threshold
V
LBO Threshold
LBI
V
LBO Threshold
IN
DBI Input Dual Mode™ Threshold
LBI Input Dual-Mode Threshold
with Respect to IN
DBI Complete Shutdown Input
Program Range
DBI Input Bias Current V
LBI Input Bias Current V
IN, PV Operating Current
DBI
V
= VIN, VIN rising 3.135 3.3 3.525
DBI
V
falling 1.234 1.25 1.263
DBI
V
rising 1.306 1.375 1.478
DBI
V
rising 1.234 1.25 1.263
LBI
V
falling 1.103 1.125 1.140
LBI
V
= VIN, VIN falling 3.262 3.33 3.366
LBI
V
= VIN, VIN rising 3.625 3.7 3.744
LBI
V
-
Preset mode, V
ADJ mode, V
Preset mode, V
ADJ mode, V
V
falling 3.0 5.5 V
IN
= 1.25V -50 +50 nA
DBI
= 1.25V -50 +50 nA
LBI
Shutdown (DBI remains on, REF off), V
V
= 2.7V
LBI
= 2.9V
IN
= 2.9V
IN
= 3.2V
IN
= 3.2V
IN
= VPV = V
IN
DBI
IN
0.3
V
-
IN
0.3
=
2 10
VIN -
1.2
VIN -
1.2
All off (REF on) 30 55
All on; LXL, LXC not switching 130 180
Main on, no load 46 75
IN Operating Current
Dual Mode 是Maxim Integrated Products, Inc.
2 _______________________________________________________________________________________
Main on, no load, COR1 on, LXC not switching 80 110
All on except LCD, V
的商标。
= 0V, LXL, LXC not switching 115 160
ENL
RMS
V
V
V
V
V
V
µA
µA
路输出
5
PMIC
，提供
DC-DC
核电源，
用于低成本
PDA
ELECTRICAL CHARACTERISTICS (continued)
(VIN= VPV= V
Typical values are at T
ENSD
= V
ENC2
= +25°C.)
A
= V
ENL
= V
ENM
= V
ENC1
= V
DBI
= V
= VCV= 4.0V, TA = 0°C to +85°C, unless otherwise noted.
LBI
PARAMETER CONDITIONS MIN TYP MAX UNITS
LDOs
MAIN, SDIG Soft-Start Time 300 600 1200 µs
MAIN Output Voltage I
= 100µA to 300mA, VIN = 3.6V to 5.5V 3.218 3.3 3.383 V
LOAD
MAIN Current Limit 550 800 1200 mA
I
= 1mA 1
LOAD
MAIN Dropout Voltage
SDIG Output Voltage I
I
= 300mA 210 330
LOAD
I
= 500mA 350 595
LOAD
= 100µA to 200mA, VIN = 3.6V to 5.5V 3.218 3.3 3.383 V
LOAD
mV
SDIG Current Limit 525 718 900 mA
I
= 1mA 0.75
LOAD
I
SDIG Reverse Leakage Current V
COR2 Output Voltage I
= 200mA 170 300 SDIG Dropout Voltage
LOAD
I
= 500mA 525 1010
LOAD
= 5.5V, V
SDIG
= 100µA to 50mA, VIN = 3.6V to 5.5V 1.755 1.8 1.845 V
LOAD
= VIN = 0V 7 15 µA
ENSD
mV
COR2 Current Limit 65 98 150 mA
COR1 PWM BUCK
COR1 Output Voltage Accuracy
P-Channel On-Resistance
N-Channel On-Resistance
P-Channel Current-Limit
Threshold
N-Channel Current-Limit
Threshold
Minimum On- and Off-Times
LXC Leakage Current V
CV = high 1.259 1.3 1.340
CV = low 0.972 1 1.023
I
= -180mA 0.70 1.34
LXC
I
= -180mA, VPV = 3.1V 0.8 1.58
LXC
I
= 180mA 0.25 0.46
LXC
I
= 180mA, VPV = 3.1V 0.30 0.53
LXC
-0.50 -0.75 -0.925 A
-0.50 -0.72 -0.92 A
t
ON(MIN)
t
OFF(MIN)
= 0V, V
LXC
= 0V -10 +0.1 +10 µA
ENC1
0.1
0.1
V
Ω
Ω
µs
REF AND RESET OUTPUT
REF Voltage Accuracy I
REF Line Regulation 3.1V < V
REF Load Regulation 0.1µA < I
RS Deassert Threshold for COR1
Rising
= 0.1µA 1.236 1.25 1.264 V
REF
< 5.5V, I
IN
< 10µA 1 3 mV
REF
= 0.1µA 0.1 3 mV
REF
(Note 1) 88.00 90 93.25 %
MAX8594
_______________________________________________________________________________________ 3
路输出
5
PMIC
，提供
DC-DC
核电源，
用于低成本
PDA
ELECTRICAL CHARACTERISTICS (continued)
(VIN= VPV= V
Typical values are at T
ENSD
= V
ENC2
= +25°C.)
A
= V
ENL
= V
ENM
= V
ENC1
= V
DBI
= V
= VCV= 4.0V, TA = 0°C to +85°C, unless otherwise noted.
LBI
PARAMETER CONDITIONS MIN TYP MAX UNITS
RS Assert Threshold 80 %
RS Deassert Delay 10 20 30 ms
MAX8594
RS Assert Delay 50mV overdrive 5 µs
LCD
LXL Voltage Range 28 V
LXL Current Limit L1 = 10µH 195 235 275 mA
LXL On-Resistance 1.7 Ω
LXL Leakage Current V
= 28V 0.2 2 µA
LXL
Maximum LXL On-Time 2 3 4 µs
V
> 1.1V 0.8 1 1.2
Minimum LXL Off-Time
LFB Feedback Threshold 1.229 1.25 1.270 V
LFB Input Bias Current V
SW Off-Leakage Current VSW = 0V, VPV = 5.5V, V
SW PMOS On-Resistance 1 1.5 Ω
SW PMOS Peak Current Limit 700 mA
SW PMOS Average Current Limit 300 mA
Soft-Start Time CSW = 1µF 0.13 ms
LFB
V
< 0.8V (soft-start) 3.9 5 6.0
LFB
= 1.3V 5 50 nA
LFB
= 0V 0.01 1 µA
ENL
LOGIC
EN_, CV Input Low Level V
EN_, CV Input High Level V
= 3.1V to 5.5V 0.35 V
IN
= 3.1V to 5.5V 1.4 V
IN
EN_, CV Input Leakage Current 0.01 1 µA
RS, LBO, DBO Output Low Level Sinking 1mA, V
DBO Output Low Level Sinking 100µA, V
RS, LBO, DBO Output High
Leakage
V
= 5.5V, VIN = 5.5V 1 µA
OUT
= 2.5V 0.02 0.1 V
IN
= 1.0V 0.02 0.1 V
IN
THERMAL PROTECTION
Thermal-Shutdown Temperature Rising temperature +160 °C
Thermal-Shutdown Hysteresis 15 °C
µs
4 _______________________________________________________________________________________
路输出
5
PMIC
，提供
DC-DC
核电源，
用于低成本
PDA
ELECTRICAL CHARACTERISTICS
(VIN= VPV= V
ENSD
= V
ENC2
= V
ENL
= V
ENM
= V
ENC1
= V
DBI
= V
= 4.0V, TA = -40°C to +85°C, unless otherwise noted.) (Note 2)
LBI
PARAMETER CONDITIONS MIN TYP MAX UNITS
GENERAL
IN, PV Voltage Range 3.1 5.5 V
V
= VIN, VIN falling 2.93 3.06
V
Complete Shutdown
IN
Threshold
V
Complete Shutdown
DBI
Threshold
V
LBO Threshold
LBI
V
LBO Threshold
IN
DBI Input Dual-Mode Threshold
LBI Input Dual-Mode Threshold
with Respect to IN
DBI Complete Shutdown Input
Program Range
DBI Input Bias Current V
LBI Input Bias Current V
IN, PV Operating Current
DBI
V
= VIN, VIN rising 3.135 3.525
DBI
V
falling 1.228 1.264
DBI
V
rising 1.306 1.478
DBI
V
rising 1.228 1.264
LBI
V
falling 1.103 1.140
LBI
V
= VIN, VIN falling 3.248 3.366
LBI
V
= VIN, V
LBI
Preset mode, V
ADJ mode, V
Preset mode, V
ADJ mode, V
V
falling 3.0 5.5 V
IN
= 1.25V -50 +50 nA
DBI
= 1.25V -50 +50 nA
LBI
Shutdown (DBI remains on, REF off), V
V
= 2.7V
LBI
rising 3.609 3.744
IN
V
-
= 2.9V
IN
= 2.9V
IN
= 3.2V
IN
= 3.2V
IN
= VPV = V
IN
DBI
IN
0.3
V
-
IN
0.3
=
10
VIN -
1.25
VIN -
1.25
All off (REF on) 55
V
V
V
V
V
V
µA
All on, LXL, LXC not switching 180
Main on, no load 75
IN Operating Current
LDOs
Main on, no load, COR1 on, LXC not switching 110
All on except LCD, V
switching
= 0V, LXL and LXC not
ENL
160
µA
MAIN, SDIG Soft-Start Time Ramp ILIM from 0% to 100% 300 1200 µs
MAIN Output Voltage I
= 100µA to 300mA, VIN = 3.6V to 5.5V 3.209 3.383 V
LOAD
MAIN Current Limit 550 1230 mA
I
= 300mA 330
MAIN Dropout Voltage
LOAD
I
= 500mA 595
LOAD
mV
MAX8594
_______________________________________________________________________________________ 5
路输出
5
PMIC
，提供
DC-DC
核电源，
用于低成本
PDA
ELECTRICAL CHARACTERISTICS (continued)
(VIN= VPV= V
ENSD
= V
ENC2
= V
ENL
= V
ENM
= V
ENC1
= V
DBI
= V
= 4.0V, TA = -40°C to +85°C, unless otherwise noted.) (Note 2)
LBI
PARAMETER CONDITIONS MIN TYP MAX UNITS
SDIG Output Voltage I
= 100µA to 200mA, VIN = 3.6V to 5.5V 3.212 3.383 V
LOAD
SDIG Current Limit 485 900 mA
I
MAX8594
SDIG Dropout Voltage
SDIG Reverse Leakage Current V
COR2 Output Voltage I
= 200mA 300
LOAD
I
= 500mA 1250
LOAD
= 5.5V, V
SDIG
= 100µA to 50mA, VIN = 3.6V to 5.5V 1.750 1.845 V
LOAD
= VIN = 0V 15 µA
ENSD
COR2 Current Limit 65 150 mA
COR1 PWM BUCK
COR1 Output Voltage Accuracy
P-Channel On-Resistance
N-Channel On-Resistance
P-Channel Current-Limit
Threshold
N-Channel Current-Limit
Threshold
LXC Leakage Current VPV = 5.5V, V
CV = high 1.255 1.340
CV = low 0.969 1.023
I
= -180mA 1.34
LXC
= -180mA, VPV = 3.1V 1.58
I
LXC
I
= 180mA 0.46
LXC
= 180mA, VPV = 3.1V 0.53
I
LXC
-0.500 -0.925 A
-0.46 -0.92 A
= 0V or VPV, V
LXC
= 0V -10 +10 µA
ENC1
REF AND RESET OUTPUT
REF Voltage Accuracy I
REF Line Regulation 3.1V < V < 5.5V, I
REF Load Regulation 0.1µA < I
RS Deassert Threshold for COR1
Rising
= 0.1µA 1.229 1.264 V
REF
= 0.1µA 3 mV
REF
< 10µA 3 mV
REF
(Note 1) 88.00 93.25 %
RS Deassert Delay 10 30 ms
LCD
LXL Voltage Range 28 V
LXL Current Limit L1 = 10µH 180 280 mA
LXL Leakage Current V
= 28V 2 µA
LXL
Maximum LXL On-Time 2 4 µs
V
> 1.1V 0.8 1.2
Minimum LXL Off-Time
LFB Feedback Threshold 1.233 1.270 V
LFB Input Bias Current V
SW Off-Leakage Current VSW = 0V, VPV = 5.5V, V
SW PMOS On-Resistance 1.5 Ω
LFB
V
< 0.8V (soft-start) 3.9 6.0
LFB
= 1.3V 50 nA
LFB
= 0V 1 µA
ENL
mV
V
Ω
Ω
µs
6 _______________________________________________________________________________________
路输出
MAIN DROPOUT VOLTAGE
vs. LOAD CURRENT
MAX8594 toc01
LOAD CURRENT (mA)
DROPOUT VOLTAGE (mV)
500400300200100
50
100
150
200
250
300
350
400
450
500
0
0 600
100
200
300
400
500
600
700
800
0
SDIG DROPOUT VOLTAGE
vs. LOAD CURRENT
MAX8594 toc02
LOAD CURRENT (mA)
DROPOUT VOLTAGE (mV)
5004003002001000600
1.5000
2.0000
1.7500
2.7500
2.5000
2.2500
3.2500
3.0000
3.5000
0 300 400100 200 500 600 700 800 900
MAIN OUTPUT VOLTAGE
vs. LOAD CURRENT
MAX8594 toc03
LOAD CURRENT (mA)
OUTPUT VOLTAGE (V)
5
PMIC
，提供
DC-DC
核电源，
用于低成本
PDA
ELECTRICAL CHARACTERISTICS (continued)
(VIN= VPV= V
ENSD
= V
ENC2
= V
ENL
= V
ENM
= V
ENC1
= V
DBI
= V
= 4.0V, TA = -40°C to +85°C, unless otherwise noted.) (Note 2)
LBI
PARAMETER CONDITIONS MIN TYP MAX UNITS
LOGIC
EN_, CV Input Low Level V
EN_, CV Input High Level V
= 3.1V to 5.5V 0.3 V
IN
= 3.1V to 5.5V 1.4 V
IN
EN_, CV Input Leakage Current 1 µA
RS, LBO, DBO Output Low Level Sinking 1mA, V
DBO Output Low Level Sinking 100µA, V
RS, LBO, DBO Output High
Leakage
Note 1: The reset trip point tracks the COR1 voltage. For example, a minimum reset spec does not occur with a maximum COR1
spec, and a minimum COR1 spec does not occur with a maximum reset spec.
Note 2: Specifications to -40°C are guaranteed by design, not production tested.
V
= 5.5V, VIN = 5.5V 1 µA
OUT
= 2.5V 0.1 V
IN
= 1.0V 0.1 V
IN
MAX8594
___________________________________________________________________
(Circuit of Figure 2, VIN= 4V, TA= +25°C, unless otherwise noted.)
典型工作特性
_______________________________________________________________________________________ 7
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