Maxim MAX8588ETM Schematics

General Description

The MAX8588 power-management IC is optimized for
devices using Intel X-Scale™ microprocessors, includ­ing smartphones, PDAs, internet appliances, and other
portable devices requiring substantial computing and
multimedia capability at low power.

The IC integrates seven high-performance, low-operating­current power supplies along with supervisory and
management functions. Included are three step-down
DC-DC outputs, three linear regulators, and a seventh
always-on output. DC-DC converters power I/O, memo­ry, and the CPU core. The I/O supply can be preset to

3.3V or adjusted to other values. The DRAM supply is
preset for 3.3V or 2.5V, or it can be adjusted with exter­nal resistors. The CPU core supply is serial pro­grammed for dynamic voltage management and can
supply up to 0.5A. Linear-regulated outputs are provid­ed for SRAM, PLL, and USIM supplies.

To minimize quiescent current, critical power supplies
have bypass “sleep” LDOs that can be activated when
output current is very low. Other functions include sep­arate on/off control for all DC-DC converters, low-bat­tery and dead-battery detection, a reset and power-OK
output, a backup-battery input, and a two-wire serial
interface.

All DC-DC outputs use fast, 1MHz PWM switching and
small external components. They operate with fixed-fre­quency PWM control and automatically switch from
PWM to skip-mode operation at light loads to reduce
operating current and extend battery life. The core out­put can be forced into PWM mode at all loads to mini­mize noise. A 2.6V to 5.5V input voltage range allows
1-cell lithium-ion (Li+), 3-cell NiMH, or a regulated 5V
input. The MAX8588 is available in a tiny 6mm x 6mm,
48-pin thin QFN package.

Applications

PDA, Palmtop, and Wireless Handhelds

Third-Generation Smart Cell Phones

Internet Appliances and Web-Books

Features

♦ Six Regulators in One Package

Step-Down DC-DC for I/O at 1.3A
Step-Down DC-DC for Memory at 0.9A
Step-Down Serial-Programmed DC-DC for CORE
Up to 0.5A
Three LDO Outputs for SRAM, PLL, and USIM
Always-On Output for VCC_BATT

♦ Low Operating Current

60µA in Sleep Mode (Sleep LDOs On)
130µA with DC-DCs On (Core Off)
200µA All Regulators On, No Load
5µA Shutdown Current

♦ Optimized for X-Scale Processors

♦ Backup-Battery Input

♦ 1MHz PWM Switching Allows Small External

Components

♦ Tiny 6mm x 6mm, 48-Pin Thin QFN Package

MAX8588

High-Efficiency, Low-I

Q

PMIC with

Dynamic Core for PDAs and Smartphones

________________________________________________________________ Maxim Integrated Products 1

Simplified Diagram

19-3527; Rev 0; 3/05

For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at
1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.

Pin Configuration appears at end of data sheet.

X-Scale is a trademark of Intel Corp.

Ordering Information

PART TEMP RANGE PIN-PACKAGE

MAX8588ETM -40°C to +85°C 48 Thin QFN (6mm x 6mm)

MAIN BATTERY

nRESET

nVCC_FAULT

nBATT_FAULT

SYS_EN

PWR_EN

BACKUP
BATTERY

IN

BKBT

MR

RSO

POK

DBO

ON1-2

ON3-6

MAX8588

V1

V2

V3

V4

V5

V6

V7

VCC_IO 3.3V

VCC_MEM 2.5V

VCC_CORE

0.8V TO 1.3V

VCC_PLL 1.3V

VCC_SRAM 1.1V

VCC_USIM
0V, 1.8V, 3.0V

VCC_BATT

MAX8588

High-Efficiency, Low-IQPMIC with
Dynamic Core for PDAs and Smartphones

2 _______________________________________________________________________________________

ABSOLUTE MAXIMUM RATINGS

ELECTRICAL CHARACTERISTICS

(VIN= 3.6V, V

BKBT

= 3.0V, V

LBI

= 1.1V, V

DBI

= 1.35V, circuit of Figure 5, TA = 0°C to +85°C, unless otherwise noted. Typical values

are at T

A

= +25°C.)

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.

IN, IN45, IN6, MR, LBO, DBO, RSO, POK, SCL, SDA,

BKBT, V7, SLP, SRAD, PWM3 to GND...............-0.3V to +6V

REF, CC_, ON_, FB_, DBI, LBI, V1, V2, RAMP, BYP,

MR to GND ...........................................-0.3V to (V

IN

+ 0.3V)

PV1, PV2, PV3, SLPIN to IN...................................-0.3V to +0.3V

V4, V5 to GND ..........................................-0.3V to (V

IN45

+ 0.3V)

V6 to GND ..................................................-0.3V to (V

IN6

+ 0.3V)

PV1 to PG1 ............................................................-0.3V to +6.0V

PV2 to PG2 ............................................................-0.3V to +6.0V

PV3 to PG3 ............................................................-0.3V to +6.0V

LX1 Continuous Current....................................-1.30A to +1.30A

LX2 Continuous Current........................................-0.9A to +0.9A

LX3 Continuous Current........................................-0.5A to +0.5A

PG1, PG2, PG3 to GND.........................................-0.3V to +0.3V

V1, V2, V4, V5, V6 Output Short-Circuit Duration.......Continuous

Continuous Power Dissipation (T

A

= +70°C)
6mm x 6mm 48-Pin Thin QFN

(derate 26.3mW/°C above +70°C)...........................2105mW

Operating Temperature Range ...........................-40°C to +85°C

Junction Temperature......................................................+150°C

Storage Temperature Range .............................-65°C to +150°C

Lead Temperature (soldering, 10s) .................................+300°C

PV1, PV2, PV3, SLPIN, IN Supply
Voltage Range

IN45, IN6 Supply Voltage Range 2.4 5.5 V

IN Undervoltage-Lockout (UVLO)
Threshold

Quiescent Current

BKBT Input Current

REF Output Voltage 0 to 10µA load 1.2375 1.25 1.2625 V

SYNCHRONOUS-BUCK PWM REG1

REG1 Voltage Accuracy FB1 = GND, 3.6V ≤ V

FB1 Voltage Accuracy

FB1 Input Current FB1 used with external resistors 100 nA

Error-Amplifier Transconductance Referred to FB 87 µS

Dropout Voltage (Note 1)

PARAMETER CONDITIONS MIN TYP MAX UNITS

PV1, PV2, PV3, IN, and SLPIN must connect together
externally

V

rising 2.25 2.40 2.55

IN

falling 2.200 2.35 2.525

V

IN

+ I

PV3

PV1

+ I

IN45

+

+

IN

+

PV1

No load (I
I

+ I

PV2

I

SLPIN

I

)

IN6

ON1 = 0 4

ON1 = IN 0.8

FB1 used with external resistors, 3.6V ≤ V
load = 0 to 1300mA

Load = 800mA 180 280

Load = 1300mA 293 450

Only V7 on, V

REG1 and REG2 on in switch mode,
REG3 off

REG1 and REG2 on in sleep mode,
REG3 off

All REGs on 225

≤ 5.5V, load = 0 to 1300mA 3.25 3.3 3.35 V

= 3.0V 32

IN

≤ 5.5V,

PV1

2.6 5.5 V

130

60

1.231 1.25 1.269 V

V

µA

µA

mV

MAX8588

High-Efficiency, Low-I

Q

PMIC with

Dynamic Core for PDAs and Smartphones

_______________________________________________________________________________________ 3

ELECTRICAL CHARACTERISTICS (continued)

(VIN= 3.6V, V

BKBT

= 3.0V, V

LBI

= 1.1V, V

DBI

= 1.35V, circuit of Figure 5, TA = 0°C to +85°C, unless otherwise noted. Typical values

are at T

A

= +25°C.)

p-Channel On-Resistance

n-Channel On-Resistance

Current-Sense Transresistance 0.5 V/A

p-Channel Current-Limit Threshold -1.55 -1.80 -2.10 A

PWM Skip-Mode Transition Load
Current

OUT1 Maximum Output Current 2.6V ≤ V

LX1 Leakage Current V

SYNCHRONOUS-BUCK PWM REG2

REG2 Voltage Accuracy

FB2 Voltage Accuracy

FB2 Input Current FB2 used with external resistors, V

Error-Amplifier Transconductance Referred to FB 87 µS

Dropout Voltage Load = 900mA (Note 1) 243 380 mV

p-Channel On-Resistance

n-Channel On-Resistance

Current-Sense Transresistance 0.7 V/A

p-Channel Current-Limit Threshold -1.10 -1.275 -1.50 A

PWM Skip-Mode Transition Load
Current

OUT2 Maximum Output Current 2.6V ≤ V

LX2 Leakage Current V

SYNCHRONOUS-BUCK PWM REG3

REG3 Voltage Accuracy

Error-Amplifier Transconductance 68 µS

PARAMETER CONDITIONS MIN TYP MAX UNITS

I

= -180mA 0.18 0.3

LX1

I

= -180mA, V

LX1

I

= 180mA 0.13 0.225

LX1

I

= 180mA, V

LX1

Decreasing load current (Note 2) 30 mA

≤ 5.5V (Note 3) 1.3 A

PV1

= 5.5V, LX1 = GND or PV1, V

PV1

FB2 = GND, 3.6V ≤ V

FB2 = IN, 3.6V ≤ V

FB2 used with external resistors, 3.6V ≤ V
load = 0 to 900mA

I

= -180mA 0.225 0.375

LX2

= -180mA, V

I

LX2

I

= 180mA 0.15 0.25

LX2

= 180mA, V

I

LX2

Decreasing load current (Note 2) 30 mA

≤ 5.5V (Note 3) 0.9 A

PV2

= 5.5V, LX2 = GND or PV2, V

PV2

REG3 from 0.7V to 1.475V,

2.6V ≤ V

PV3

≤ 5.5V

= 2.6V 0.21 0.35

PV1

= 2.6V 0.15 0.25

PV1

= 0V -20 +0.1 +20 µA

ON1

≤ 5.5V, load = 0 to 900mA 2.463 2.5 2.537

PV2

≤ 5.5V, load = 0 to 900mA 3.25 3.3 3.35

PV2

≤ 5.5V,

PV2

= 1.25V 100 nA

FB2

= 2.6V 0.26 0.425

PV2

= 2.6V 0.17 0.275

PV2

= 0V -10 +0.1 +10 µA

ON2

Load = 0 to 500mA -1.5 +1.5 %

1.231 1.25 1.269 V

Ω

Ω

V

Ω

Ω

MAX8588

High-Efficiency, Low-IQPMIC with
Dynamic Core for PDAs and Smartphones

4 _______________________________________________________________________________________

ELECTRICAL CHARACTERISTICS (continued)

(VIN= 3.6V, V

BKBT

= 3.0V, V

LBI

= 1.1V, V

DBI

= 1.35V, circuit of Figure 5, TA = 0°C to +85°C, unless otherwise noted. Typical values

are at T

A

= +25°C.)

p-Channel On-Resistance

n-Channel On-Resistance

Current-Sense Transresistance 1.1 V/A

p-Channel Current-Limit Threshold -0.60 -0.7 -0.85 A

PWM Skip-Mode Transition Load
Current

OUT3 Maximum Output Current 2.6V ≤ V

LX3 Leakage Current V

LDOS V4, V5, V6, V1 SLEEP, V2 SLEEP, AND V7 OUTPUT

V4, V5, V6, V1 SLEEP, V2 SLEEP
Output Current

V7 Output Current 30 mA

REG4 Output Voltage Load = 0.1mA to 35mA 1.261 1.3 1.339 V

REG4 Noise With 1µF C

REG5 Output Voltage Load = 0.1mA to 35mA 1.067 1.1 1.133 V

IN45, IN6 Input Voltage Range 2.4 5.5 V

REG6 Output Voltage (POR Default
to 0V, Set by Serial Input)

V7 Output Voltage

V1 and V2 SLEEP Output Voltage
Accuracy

V1 and V2 SLEEP Dropout Voltage Load = 20mA 75 150 mV

V6 Dropout Voltage 3V m od e, l oad = 30m A, 2.5V m od e, l oad = 30m A 110 200 mV

V7 Switch Voltage Drop Load = 20mA, V
V4, V5, V6 Output Current Limit 40 90 mA
BKBT Leakage 1 µA

OSCILLATOR

PWM Switching Frequency 0.93 1 1.07 MHz

SUPERVISORY/MANAGEMENT FUNCTIONS

POK Trip Threshold (Note 4)

PARAMETER CONDITIONS MIN TYP MAX UNITS

I

= -180mA 0.225 0.375

LX3

I

= -180mA, V

LX2

I

= 180mA 0.15 0.25

LX3

= 180mA, V

I

LX3

Decreasing load current (Note 2) 30 mA

≤ 5.5V (Note 3) 0.5 A

PV3

= 5.5V, LX3 = GND or PV2, V

PV3

OUT

0V setti ng ( ei ther ON 6 l ow or ser i al p r og r am m ed ) 0

1.8V setting, load = 0.1mA to 35mA 1.746 1.8 1.854

2.5V setting, load = 0.1mA to 35mA 2.425 2.5 2.575

3.0V setting, load = 0.1mA to 35mA 2.91 3.0 3.09

V1 on and in regulation V

V1 off V

Set to same output voltage as REG1 and REG2 -3.0 +3.0 %

Rising 92 94.75 97

Falling 88.5 90.5 92.5

= 2.6V 0.26 0.425

PV3

= 2.6V 0.17 0.275

PV3

= 0V -10 +0.1 +10 µA

ON3

35 mA

and 0.01µF C

= V

BKBT

V1

BYP

= 3.0V 100 200 mV

15 µV

BKBT

V1

Ω

Ω

RMS

V

V

%

MAX8588

High-Efficiency, Low-I

Q

PMIC with

Dynamic Core for PDAs and Smartphones

_______________________________________________________________________________________ 5

ELECTRICAL CHARACTERISTICS (continued)

(VIN= 3.6V, V

BKBT

= 3.0V, V

LBI

= 1.1V, V

DBI

= 1.35V, circuit of Figure 5, TA = 0°C to +85°C, unless otherwise noted. Typical values

are at T

A

= +25°C.)

LBI Threshold (Falling) Hysteresis is 5% (typ)

DBI Threshold (Falling) Hysteresis is 5% (typ)

RSO Threshold (Falling) Voltage on REG7, hysteresis is 5% (typ) 2.25 2.41 2.56 V
RSO Deassert Delay 61 65.5 70 ms

LBI Input Bias Current -50 -5 nA

DBI Input Bias Current 15 50 nA

Thermal-Shutdown Temperature TJ rising +160 °C

Thermal-Shutdown Hysteresis 15 °C

LOGIC INPUTS AND OUTPUTS

LBO, DBO, POK, RSO, SDA Output
Low Level

LBO, DBO, POK, RSO Output Low
Level

LBO, DBO, POK, RSO Output-High
Leakage Current

ON_, SCL, SDA, SLP, PWM3, MR,
SRAD Input High Level

ON_, SCL, SDA, SLP, PWM3, MR,
SRAD Input Low Level

ON_, SCL, SDA, SLP, PWM3, MR,
SRAD Input Leakage Current

SERIAL INTERFACE

Clock Frequency 400 kHz

Bus Free Time Between START and
STOP

H ol d Ti m e Rep eated S TART C ond i ti on 0.6 µs

CLK Low Period 1.3 µs

CLK High Period 0.6 µs

S etup Ti m e Rep eated S TART C ond i ti on 0.6 µs

DATA Hold Time 0µs

DATA Setup Time 100 ns

Maximum Pulse Width of Spikes that
Must be Suppressed by the Input
Filter of Both DATA and CLK Signals

Setup Time for STOP Condition 0.6 µs

PARAMETER CONDITIONS MIN TYP MAX UNITS

LBI = IN (for preset) 3.51 3.6 3.69

With resistors at LBI 0.98 1.00 1.02

DBI = IN (for preset) 3.024 3.15 3.276

With resistors at LBI 1.208 1.232 1.256

2.6V ≤ V7

V7

Pin

2.6V ≤ V

2.6V ≤ V

Pin = GND, 5.5V -1 +1 µA

≤ 5.5V, sinking 1mA 0.4 V

= 1V, sinking 100µA 0.4 V

= 5.5V 0.2 µA

≤ 5.5V 1.6 V

IN

≤ 5.5V 0.4 V

IN

1.3 µs

50 ns

V

V

MAX8588

High-Efficiency, Low-IQPMIC with
Dynamic Core for PDAs and Smartphones

6 _______________________________________________________________________________________

ELECTRICAL CHARACTERISTICS

(VIN= 3.6V, V

BKBT

= 3.0V, V

LBI

= 1.1V, V

DBI

= 1.35V, circuit of Figure 5, TA = -40°C to +85°C, unless otherwise noted.) (Note 5)

PV1, PV2, PV3, SLPIN, IN Supply
Voltage Range

IN45, IN6 Supply Voltage Range 2.4 5.5 V

IN Undervoltage-Lockout (UVLO)
Threshold

SYNCHRONOUS-BUCK PWM REG1

REG1 Voltage Accuracy FB1 = GND, 3.6V ≤ V

FB1 Voltage Accuracy

FB1 Input Current FB1 used with external resistors 100 nA

Dropout Voltage

p-Channel On-Resistance

n-Channel On-Resistance

p-Channel Current-Limit Threshold -1.55 -2.10 A

OUT1 Maximum Output Current 2.6V ≤ V

LX1 Leakage Current V

SYNCHRONOUS-BUCK PWM REG2

REG2 Voltage Accuracy

FB2 Voltage Accuracy

FB2 Input Current FB2 used with external resistors, V

Dropout Voltage Load = 900mA (Note 1) 380 mV

p-Channel On-Resistance

n-Channel On-Resistance

p-Channel Current-Limit Threshold -1.1 -1.50 A

OUT2 Maximum Output Current 2.6V ≤ V

LX2 Leakage Current V

PARAMETER CONDITIONS MIN MAX UNITS

PV1, PV2, PV3, IN, and SLPIN must connect together
externally

V

rising 2.25 2.55

IN

V

falling 2.200 2.525

IN

≤ 5.5V, load = 0 to 1300mA 3.25 3.35 V

PV1

FB1 used with external resistors, 3.6V ≤ V
load = 0 to 1300mA

Load = 800mA (Note 1) 280

Load = 1300mA (Note 1) 450

I

= -180mA 0.3

LX1

I

= -180mA, V

LX1

I

= 180mA 0.225

LX1

I

= 180mA, V

LX1

≤ 5.5V (Note 3) 1.30 A

PV1

= 5.5V, LX1 = GND or PV1, V

PV1

FB2 = GND, 3.6V ≤ V

FB2 = IN, 3.6V ≤ V

FB2 used with external resistors, 3.6V ≤ V
load = 0 to 900mA

I

= -180mA 0.375

LX2

= -180mA, V

I

LX2

I

= -180mA 0.25

LX2

= -180mA, V

I

LX2

≤ 5.5V (Note 3) 0.9 A

PV2

= 5.5V, LX2 = GND or PV2, V

PV2

= 2.6V 0.35

PV1

= 2.6V 0.25

PV1

ON1

≤ 5.5V, load = 0 to 900mA 2.463 2.537

PV2

≤ 5.5V, load = 0 to 900mA 3.25 3.35

PV2

FB2

= 2.6V 0.425

PV2

= 2.6V 0.275

PV2

ON2

≤ 5.5V,

PV1

= 0V -10 +10 µA

≤ 5.5V,

PV2

= 1.25V 100 nA

= 0V -10 +10 µA

2.6 5.5 V

1.231 1.269 V

1.231 1.269 V

V

mV

Ω

Ω

V

Ω

Ω

MAX8588

High-Efficiency, Low-I

Q

PMIC with

Dynamic Core for PDAs and Smartphones

_______________________________________________________________________________________ 7

ELECTRICAL CHARACTERISTICS (continued)

(VIN= 3.6V, V

BKBT

= 3.0V, V

LBI

= 1.1V, V

DBI

= 1.35V, circuit of Figure 5, TA = -40°C to +85°C, unless otherwise noted.) (Note 5)

SYNCHRONOUS-BUCK PWM REG3

REG3 Output Voltage Accuracy

p-Channel On-Resistance

n-Channel On-Resistance

p-Channel Current-Limit Threshold -0.60 -0.85 A

OUT3 Maximum Output Current 2.6V ≤ V

LX3 Leakage Current V

LDOs V4, V5, V6, V1 SLEEP, V2 SLEEP, AND V7 OUTPUT

V4, V5, V6, V1 SLEEP, V2 SLEEP
Output Current

V7 Output Current 30 mA

REG4 Voltage Accuracy Load = 0.1mA to 35mA 1.254 1.346 V

REG5 Voltage Accuracy Load = 0.1mA to 35mA 1.061 1.139 V

IN45, IN6 Input Voltage Range 2.4 5.5 V

REG6 Output Voltage (POR Default
to 0V, Set by Serial Input)

V1 and V2 SLEEP Output Voltage
Accuracy

V1 and V2 SLEEP Dropout Voltage Load = 20mA 150 mV

V6 Dropout Voltage 3V m od e, l oad = 30m A; 2.5V m od e, l oad = 30m A 200 mV

V7 Switch Voltage Drop Load = 20mA, V
V4, V5, V6 Output Current Limit 40 mA
BKBT Leakage 1 µA

OSCILLATOR

PWM Switching Frequency 0.93 1.07 MHz

SUPERVISORY/MANAGEMENT FUNCTIONS

POK Trip Threshold (Note 4)

LBI Threshold (Falling) Hysteresis is 5% (typ)

PARAMETER CONDITIONS MIN MAX UNITS

REG3 from 0.7V to 1.475V,

2.6V ≤ V

I

LX3

I

LX2

I

LX3

I

LX3

PV3

1.8V setting, load = 0.1mA to 35mA 1.737 1.863

2.5V setting, load = 0.1mA to 35mA 2.412 2.588

3.0V setting, load = 0.1mA to 35mA 2.895 3.105

Set to same output voltage as REG1 and REG2 -3.5 +3.5 %

Rising 92 97

Falling 88.5 92.5

≤ 5.5V

PV3

= -180mA 0.375

= -180mA, V

= 180mA 0.25

= 180mA, V

≤ 5.5V (Note 3) 0.5 A

PV3

= 5.5V, LX3 = GND or PV2, V

= 2.6V 0.425

PV3

= 2.6V 0.275

PV3

BKBT

Load = 0 to 500mA -1.5 +1.5 %

= 0V -10 +10 µA

ON3

35 mA

= V

= 3.0V 200 mV

V1

LBI = IN (for preset) 3.51 3.69

With resistors at LBI 0.98 1.02

Ω

Ω

V

%

V

MAX8588

High-Efficiency, Low-IQPMIC with
Dynamic Core for PDAs and Smartphones

8 _______________________________________________________________________________________

ELECTRICAL CHARACTERISTICS (continued)

(VIN= 3.6V, V

BKBT

= 3.0V, V

LBI

= 1.1V, V

DBI

= 1.35V, circuit of Figure 5, TA = -40°C to +85°C, unless otherwise noted.) (Note 5)

DBI Threshold (Falling) Hysteresis is 5% (typ)

RSO Threshold (Falling) Voltage on REG7, hysteresis is 5% (typ) 2.25 2.60 V
RSO Deassert Delay 62 69 ms

LBI Input Bias Current -50 nA

DBI Input Bias Current 75 nA

LOGIC INPUTS AND OUTPUTS

LBO, DBO, POK, RSO, SDA Output
Low Level

LBO, DBO, POK, RSO, SDA Output
Low Level

LBO, DBO, POK, RSO Output-High
Leakage Current

ON_, SCL, SDA, SLP, PWM3, MR,
SRAD Input High Level

ON_, SCL, SDA, SLP, PWM3, MR,
SRAD Input Low Level

ON_, SCL, SDA, SLP, PWM3, MR,
SRAD Input Leakage Current

SERIAL INTERFACE

Clock Frequency 400 kHz

Bus Free Time Between START and
STOP

Hold Time Repeated START
Condition

CLK Low Period 1.3 µs

CLK High Period 0.6 µs

Setup Time Repeated START
Condition

DATA Hold Time 0µs

DATA Setup Time 100 ns

Setup Time for STOP Condition 0.6 µs

PARAMETER CONDITIONS MIN MAX UNITS

DBI = IN (for preset) 2.993 3.307

With resistors at LBI 1.208 1.256

2.6V ≤ V7

V7

Pin

2.6V ≤ V

2.6V ≤ V

Pin = GND, 5.5V -1 +1 µA

≤ 5.5V, sinking 1mA 0.4 V

= 1V, sinking 100µA 0.4 V

= 5.5V 0.2 µA

≤ 5.5V 1.6 V

IN

≤ 5.5V 0.4 V

IN

1.3 µs

0.6 µs

0.6 µs

V

MAX8588

High-Efficiency, Low-I

Q

PMIC with

Dynamic Core for PDAs and Smartphones

_______________________________________________________________________________________ 9

Note 1: Dropout voltage is guaranteed by the p-channel switch resistance and assumes a maximum inductor resistance of 45mΩ.
Note 2: The PWM-skip-mode transition has approximately 10mA of hysteresis.
Note 3: The maximum output current is guaranteed by the following equation:

where:

and R

N

= n-channel synchronous rectifier R

DS(ON)

RP = p-channel power switch R

DS(ON)

RL = external inductor ESR
I

OUT(MAX)

= maximum required load current
f = operating frequency minimum
L = external inductor value
I

LIM

can be substituted for I

OUT(MAX)

(desired) when solving for D. This assumes that the inductor ripple current is

small relative to the absolute value.

Note 4: POK only indicates the status of supplies that are enabled (except V7). When a supply is turned off, POK does not trigger

low. When a supply is turned on, POK immediately goes low until that supply reaches regulation. POK is forced low when all
supplies (except V7) are disabled.

Note 5: Specifications to -40°C are guaranteed by design, not production tested.

ELECTRICAL CHARACTERISTICS (continued)

VD

()

−

1

I

LIM

I

OUT

=

max

++

1

VI RR

++

OUT OUT MAX N L

D

=

VI RR

+−

IN OUT MAX N P

OUT

−

xfxL

2

()

−

RR

()

NL

()

()

1

xfxL

2

()

()

D

MAX8588

High-Efficiency, Low-IQPMIC with
Dynamic Core for PDAs and Smartphones

10 ______________________________________________________________________________________

Typical Operating Characteristics

(Circuit of Figure 6, V

IN

= 3.6V, TA = +25°C, unless otherwise noted.)

100

0.1 1 10 100 1000 10,000

90

80

70

60

50

40

REG1 3.3V OUTPUT EFFICIENCY

vs. LOAD CURRENT

MAX8588 toc01

LOAD CURRENT (mA)

EFFICIENCY (%)

VIN = 3.6V

VIN = 4.0V

VIN = 5.0V

100

40

0.1 10 1001 1000

REG2 2.5V OUTPUT EFFICIENCY

vs. LOAD CURRENT

MAX8588 toc02

LOAD CURRENT (mA)

EFFICIENCY (%)

50

60

70

80

90

VIN = 3.6V

VIN = 4.0V

VIN = 5.0V

100

40

0.1 10 1001 1000

REG3 1.3V OUTPUT EFFICIENCY

vs. LOAD CURRENT

MAX8588 toc03

LOAD CURRENT (mA)

EFFICIENCY (%)

50

60

70

80

90

VIN = 3.6V

VIN = 4.0V VIN = 5.0V

0.1 10 1001 1000

REG3 1.3V OUTPUT WITH FORCED-PWM

EFFICIENCY vs. LOAD CURRENT

MAX8588 toc04

LOAD CURRENT (mA)

EFFICIENCY (%)

VIN = 3.6V

VIN = 5.0V

VIN = 4.0V

100

40

50

60

70

80

90

REG2 SLEEP LDO 2.5V OUTPUT

EFFICIENCY vs. LOAD CURRENT

MAX8588 toc06

LOAD CURRENT (mA)

EFFICIENCY (%)

90

30

40

50

60

70

80

0.1 1 10

VIN = 3.6V VIN = 4.0V

VIN = 5.0V

REG1 SLEEP LDO 3.3V OUTPUT

EFFICIENCY vs. LOAD CURRENT

MAX8588 toc05

LOAD CURRENT (mA)

EFFICIENCY (%)

100

40

50

60

70

80

90

0.1 1 10

VIN = 3.6V

VIN = 4.0V

VIN = 5.0V

0

20

140

100

180

220

021345

QUIESCENT CURRENT
vs. SUPPLY VOLTAGE

MAX8588 toc07

INPUT VOLTAGE (V)

INPUT CURRENT (µA)

BKBT BIASED AT 3.6V

V1, V2, AND V3 ON

V1 AND V2 ON

V1 ON

V1 AND V2 SLEEP

V1 SLEEP

ALL BUT V7 OFF

200

160

40

60

80

120